CN208923173U - High power crystal silicon component - Google Patents
High power crystal silicon component Download PDFInfo
- Publication number
- CN208923173U CN208923173U CN201821725917.8U CN201821725917U CN208923173U CN 208923173 U CN208923173 U CN 208923173U CN 201821725917 U CN201821725917 U CN 201821725917U CN 208923173 U CN208923173 U CN 208923173U
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- cell piece
- back side
- front side
- welding
- conductive glue
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of high power crystal silicon components, including multiple cell pieces, several weldings being connected between two neighboring cell piece, several front side conductive glue and several back side conducting resinls have been respectively coated in the front and back of cell piece, front side conductive glue and back side conducting resinl are electrically conducting transparent glue, with the quantity of back side conducting resinl with extending direction, identical and position mutually corresponds front side conductive glue, be connected to the welding between two neighboring cell piece quantity it is identical as the quantity of front side conductive glue and back side conducting resinl and correspond, one end of welding is connected with the front side conductive glue of a cell piece and the other end is connected with the back side conducting resinl of another cell piece.The utility model high power crystal silicon component reduces cell piece shading-area, thus lifting assembly generated output about 3% or so by using electrically conducting transparent glue technology in conjunction with metal welding band technology.
Description
Technical field
The utility model relates to a kind of high power crystal silicon components.
Background technique
Promoting photovoltaic efficiency is the objective struggled always in industry, and battery-end constantly promotes electricity by process modification
Pond efficiency, assembly end, which improves the effective mode of generating efficiency one, is, encapsulation loss/increase optical absorption intensity is reduced, to be promoted
The generated energy of photovoltaic module unit area.Current more mode one in the industry: increasing welding thickness, reduces welding width,
It is blocked to reduce incident light, reduces current loss；Mode two: increase backboard/back side EVA reflecting rate, to increase light
Internal reflection promotes incident light utilization efficiency；Mode three: using reflective solder strip, and increase welding is reflective, repeatedly inhales to improve incident light
Receipts etc. mode.
Application No. is 201521084016.1 utility model patents to disclose a kind of dereliction grid cell component, passes through welding
The conducting resinl of cell piece front and back is connected, but is in temperature change due between a variety of materials since its is to be solved
Thermal expansion coefficient it is different and caused by battery segment grid and the problem of sliver, so not considering translucency and cell power generation efficiency
The problem of, the extending direction of welding vertical conductive adhesive, and across on entire cell piece, seriously affect translucency.
Summary of the invention
To solve the above-mentioned problems, the purpose of this utility model is to provide a kind of high power crystal silicon components.
In order to reach the goals above, the technical solution adopted in the utility model is: a kind of high power crystal silicon component, including more
A cell piece, several weldings being connected between two neighboring cell piece, if the front and back of cell piece has been respectively coated
Dry front side conductive glue and several back side conducting resinls, front side conductive glue and back side conducting resinl are electrically conducting transparent glue, and front is led
With the quantity of back side conducting resinl with extending direction, identical and position mutually corresponds electric glue, is connected between two neighboring cell piece
Welding quantity it is identical as the quantity of front side conductive glue and back side conducting resinl and correspond, one end of welding and a battery
The front side conductive glue of piece is connected and the other end is connected with the back side conducting resinl of another cell piece.
Further, the both ends of the welding end with the end and back side conducting resinl that are connected to front side conductive glue respectively.
Further, there is the first space, the back side is conductive between the end of front side conductive glue and the edge of a cell piece
There is second space, one end of welding and the other end are overlapped on first respectively between the end of glue and the edge of another cell piece
It is connected at space and at second space with the end of the end of front side conductive glue and back side conducting resinl.
Further, the spacing of several front side conductive glue is identical, and the spacing of several back side conducting resinls is identical.
Further, welding is tin-coated welding strip.
Further, cell piece is 4 main grids, 5 main grids, more main grids or dereliction grid cell piece.
Due to the adoption of the above technical scheme, compared with the prior art the utility model high power crystal silicon component has following excellent
Point:
1, using electrically conducting transparent glue technical substitution metal welding tape welding connection technology, lifting assembly power；
2, electrically conducting transparent glue and welding combination technology are applied between cell piece, and cell piece positive and negative anodes is avoided to be connected；
3, welding is positioned only between two cell pieces, and welding only connects the end of conducting resinl, is reduced to the greatest extent to cell piece
Block；
4, electrically conducting transparent glue applies, and size can change according to battery main grid, realizes the covering of minimum area, increases power generation effect
Rate；
5, cell piece shading-area is reduced, to mention in conjunction with metal welding band technology by using electrically conducting transparent glue technology
Rise component generated output about 3% or so.
Detailed description of the invention
Attached drawing 1 is the overlooking structure diagram of the utility model high power crystal silicon component；
Attached drawing 2 is the positive structure diagram of the utility model high power crystal silicon component.
Figure label are as follows:
1, cell piece；2, welding；3, front side conductive glue；4, back side conducting resinl.
Specific embodiment
The preferred embodiment of the utility model is described in detail with reference to the accompanying drawing, so that advantages of the present invention and spy
Sign can be easier to be readily appreciated by one skilled in the art.
Structural schematic diagram from attached drawing 1 to attached drawing 2 can be seen that the high power crystal silicon component in the present embodiment, including more
A cell piece 1, several weldings 2 being connected between two neighboring cell piece 1, the front and back of cell piece 1 are respectively coated
There are several front side conductive glue 3 and several back side conducting resinls 4, front side conductive glue 3 and back side conducting resinl 4 are electrically conducting transparent
Identical and position mutually corresponds with extending direction for glue, front side conductive glue 3 and the quantity of back side conducting resinl 4, is connected to adjacent two
The quantity of welding 2 between a cell piece 1 is identical as the quantity of front side conductive glue 3 and back side conducting resinl 4 and corresponds, welding
2 one end is connected with the front side conductive glue 3 of a cell piece 1 and 4 phase of back side conducting resinl of the other end and another cell piece 1
Connection.
Specifically, the both ends of welding 2 end with the end and back side conducting resinl 4 that are connected to front side conductive glue 3 respectively.Such as
In attached the present embodiment shown in Fig. 2, there is the first space, back between the end of front side conductive glue 3 and the edge of a cell piece 1
There is second space, one end of welding 2 and other end difference between the end of face conducting resinl 4 and the edge of another cell piece 1
It is overlapped at the first space and is connected at second space with the end of the end of front side conductive glue 3 and back side conducting resinl 4.
Preferably, the spacing of several front side conductive glue 3 is identical, and the spacing of several back side conducting resinls 4 is identical.
In the present embodiment, welding 2 uses tin-coated welding strip.Cell piece 1 is 4 main grids, 5 main grids, more main grids or dereliction grid cell
Piece.Structure in the utility model is particularly suitable at present the battery without main grid design of relatively foreword.
In practical applications, increase conductive glue component in string welding machine front, the cell piece for applying conducting resinl is passing through
When bonding machine, bonding machine high temperature can be by conductive adhesive curing and welding such as 1 welding 2 of cell piece in attached Fig. 1 and 2 connects.
The utility model high power crystal silicon component is promoted using electrically conducting transparent glue technical substitution metal welding tape welding connection technology
Component power；Using electrically conducting transparent glue and welding combination technology between cell piece, cell piece positive and negative anodes is avoided to be connected；Welding is only arranged
Between two cell pieces, welding only connects the end of conducting resinl, reduces to the greatest extent and blocks to cell piece；Electrically conducting transparent glue applies
It applies, size can change according to battery main grid, realize the covering of minimum area, increase generating efficiency；By using electrically conducting transparent glue
Technology reduces cell piece shading-area, thus lifting assembly generated output about 3% or so in conjunction with metal welding band technology.
The above embodiments are only for explaining the technical ideas and features of the present invention, and its object is to allow be familiar with technique
Personage can understand the content of the utility model and implement accordingly, do not limit the protection scope of the present invention.
All equivalent change or modifications according to made by the spirit of the present invention essence, should all cover the protection scope of the utility model it
It is interior.
Claims (6)
1. a kind of high power crystal silicon component, it is characterised in that: including multiple cell pieces (1), be connected to two neighboring cell piece (1)
Between several weldings (2), the front and back of the cell piece (1) be respectively coated several front side conductive glue (3) and
Several back side conducting resinls (4), the front side conductive glue (3) and back side conducting resinl (4) are electrically conducting transparent glue, and the front is led
With the quantity of back side conducting resinl (4) with extending direction, identical and position mutually corresponds electric glue (3), is connected to two neighboring battery
The quantity of the welding (2) between piece (1) is identical as the quantity of front side conductive glue (3) and back side conducting resinl (4) and one is a pair of
It answers, one end of the welding (2) is connected with the front side conductive glue (3) of a cell piece (1) and the other end and another battery
The back side conducting resinl (4) of piece (1) is connected.
2. high power crystal silicon component according to claim 1, it is characterised in that: the both ends of the welding (2) respectively and even
Connect the end in front side conductive glue (3) and the end of back side conducting resinl (4).
3. high power crystal silicon component according to claim 1 or 2, it is characterised in that: the end of the front side conductive glue (3)
Between the edge of one cell piece (1) have the first space, the end of the back side conducting resinl (4) and it is described another
There is second space, it is empty that one end of the welding (2) and the other end are overlapped on described first respectively between the edge of cell piece (1)
Between and the second space at and be connected with the end of the end of front side conductive glue (3) and back side conducting resinl (4).
4. high power crystal silicon component according to claim 1, it is characterised in that: several front side conductive glue (3)
Spacing it is identical, the spacing of several back side conducting resinls (4) is identical.
5. high power crystal silicon component according to claim 1, it is characterised in that: the welding (2) is tin-coated welding strip.
6. high power crystal silicon component according to claim 1, it is characterised in that: the cell piece (1) is 4 main grids, 5 masters
Grid, more main grids or dereliction grid cell piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821725917.8U CN208923173U (en) | 2018-10-24 | 2018-10-24 | High power crystal silicon component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821725917.8U CN208923173U (en) | 2018-10-24 | 2018-10-24 | High power crystal silicon component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208923173U true CN208923173U (en) | 2019-05-31 |
Family
ID=66710365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821725917.8U Active CN208923173U (en) | 2018-10-24 | 2018-10-24 | High power crystal silicon component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208923173U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117238997A (en) * | 2023-11-10 | 2023-12-15 | 天合光能股份有限公司 | Conductive connecting piece and battery piece assembly |
-
2018
- 2018-10-24 CN CN201821725917.8U patent/CN208923173U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117238997A (en) * | 2023-11-10 | 2023-12-15 | 天合光能股份有限公司 | Conductive connecting piece and battery piece assembly |
| CN117238997B (en) * | 2023-11-10 | 2024-04-09 | 天合光能股份有限公司 | Conductive connecting piece and battery piece assembly |
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