CN208866980U - A kind of novel silicon carbide wafer grinding disk - Google Patents
A kind of novel silicon carbide wafer grinding disk Download PDFInfo
- Publication number
- CN208866980U CN208866980U CN201821611936.8U CN201821611936U CN208866980U CN 208866980 U CN208866980 U CN 208866980U CN 201821611936 U CN201821611936 U CN 201821611936U CN 208866980 U CN208866980 U CN 208866980U
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- Prior art keywords
- disk
- silicon carbide
- grinding
- carbide wafer
- abrasive disk
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 abstract description 10
- 239000007788 liquid Substances 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 6
- 238000013467 fragmentation Methods 0.000 abstract description 4
- 238000006062 fragmentation reaction Methods 0.000 abstract description 4
- 238000009825 accumulation Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 3
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The utility model discloses a kind of novel silicon carbide wafer grinding disks, including abrasive disk ontology, the side of abrasive disk ontology is equipped with grinding layer, first positioning hole is offered in the middle part of abrasive disk ontology, the second location hole to match with first positioning hole is offered in the middle part of grinding layer, the side of grinding layer is fixed with several blocks, the hole wall of first positioning hole two sides offers inclined groove, a kind of novel silicon carbide wafer grinding disk of the utility model, due to improved abrasive disk, it can be to avoid the groove of lapping liquid and accumulation of debris on abrasive disk, the two is agglomerated into blocky-shaped particle over time, solves the risk that fragmentation and slight crack etc. occurs in silicon carbide wafer in process of lapping, the number that operator scrapes groove to grinding disk can also be reduced simultaneously, not only improve the yield of product, production efficiency is also improved simultaneously.
Description
Technical field
The utility model relates to a kind of abrasive disk, in particular to a kind of novel silicon carbide wafer grinding disk.
Background technique
Silicon carbide as three generations's semiconductor material utilization because it is with broad stopband, high breakdown fields, big thermal conductivity, electronics is full
With drift velocity height, anti-radiation strong and good chemical stability superior property becomes microelectronic component and circuit of new generation
Key semiconductor material has very between SiC and the important materials GaN for making HIGH-POWERED MICROWAVES, power electronics, photoelectric device
Good matching degree is the important substrate material that SiC becomes new generation broadband semiconductor devices.Future be applied in energy-saving and emission-reduction,
Trillion yuan potential market is expedited the emergence of in information technology, the big field of national defence three, becomes one of the direction of Future New Energy Source development, however,
Substrate material of the carbofrax material as extension has very strong demand to its surface quality, otherwise will influence whether extension
Quality.Therefore, it is necessary to carry out the grinding on surface to the silicon carbide wafer to get off from wire cutting, the line for removing silicon carbide wafer is cut
Trace, repair line cut Warp, Bow, TTV etc..Chip, is mainly placed in carrier by existing grinding technique, then passes through grinding
The upper lower burrs of machine apply certain pressure and revolving speed in face of chip, to carry out the grinding on surface to silicon carbide wafer.However it is double
In the process of lapping of face, since the groove and disk of abrasive disk are in level, lapping liquid is difficult from disk to be discharged to by groove
In grinder station accumulator tank, after a period of time, the clast generated in the lapping liquid and process of lapping in abrasive disk groove will be rolled into a ball
It is polymerized to blocky-shaped particle, when blocky-shaped particle is gone in disk, under the action of pressure and revolving speed, blocky-shaped particle squeezes silicon carbide whisker
Piece causes silicon carbide wafer slight crack, fragmentation, the deep risk for scraping, even resulting in quick-fried disk occur.
Utility model content
The purpose of this utility model is to provide a kind of novel silicon carbide wafer grinding disks, to solve in above-mentioned background technique
The problem of abrasive disk of proposition is easy to happen quick-fried disk.
To achieve the above object, the utility model provides the following technical solutions: a kind of novel silicon carbide wafer grinding disk, packet
Abrasive disk ontology is included, the side of the abrasive disk ontology is equipped with grinding layer, it is fixed that first is offered in the middle part of the abrasive disk ontology
Position hole, the second location hole to match with first positioning hole is offered in the middle part of the grinding layer, and the side of the grinding layer is solid
Surely several blocks are equipped with, offer inclined groove between several described blocks.
As a kind of optimal technical scheme of the utility model, the abrasive disk ontology includes the first disk and the second circle
Disk, the side of first disk are fixed with the second disk being linked together.
As a kind of optimal technical scheme of the utility model, the avris of the grinding layer is fixed with first flange, institute
The avris for stating the first disk is fixed with second flange, the first flange and second flange and is consolidated by several screw bolt and nut
Fixed connection.
As a kind of optimal technical scheme of the utility model, the junction of first disk and the second disk is equipped with
Circle.
As a kind of optimal technical scheme of the utility model, the tilt angle of the groove is 3 ° -15 °.
Compared with prior art, the utility model has the beneficial effects that a kind of novel silicon carbide chip of the utility model is ground
Mill can be to avoid the groove of lapping liquid and accumulation of debris on abrasive disk, both over time due to improved abrasive disk
It is agglomerated into blocky-shaped particle, solves the risk that fragmentation and slight crack etc. occurs in silicon carbide wafer in process of lapping, while can also drop
Low operator scrapes the number of groove to grinding disk, not only improves the yield of product, while also improving production efficiency, in addition
It is provided with first flange and second flange, convenient for the replacement to grinding layer, to reduce cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model；
Fig. 2 is the side view of the utility model；
Fig. 3 is the structural schematic diagram of the utility model abrasive disk ontology.
In figure: 1, abrasive disk ontology；2, grinding layer；3, first positioning hole；4, second location hole；5, block；6, groove；7,
First flange；8, second flange；9, the first disk；10, the second disk.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Fig. 1-3 is please referred to, the utility model provides a kind of novel silicon carbide wafer grinding disk, including abrasive disk ontology 1,
The side of abrasive disk ontology 1 is equipped with grinding layer 2, and the middle part of abrasive disk ontology 1 offers first positioning hole 3, the middle part of grinding layer 2
The second location hole 4 to match with first positioning hole 3 is offered, the side of grinding layer 2 is fixed with several blocks 5, several
Inclined groove 6 is offered between a block 5.
Preferably, abrasive disk ontology 1 includes the first disk 9 and the second disk 10, and the side of the first disk 9 is fixed with company
The second disk 10 being integrated can save material because the radius of the second disk 10 is smaller.
Preferably, the avris of grinding layer 2 is fixed with first flange 7, and the avris of the first disk 9 is fixed with second flange
8, first flange 7 is fixedly connected with second flange 8 by several screw bolt and nut, is conveniently replaceable grinding layer 2.
Preferably, the junction of the first disk 9 and the second disk 10 is equipped with rounding, and the stress for reducing junction is concentrated.
Preferably, the tilt angle of groove 6 is 3 ° -15 °.
When specifically used, a kind of novel silicon carbide wafer grinding disk of the utility model, by 6 ditch of groove of grinding layer 2 at band
Then gradient groove 6 is installed abrasive disk ontology 1 and grinding layer 2 by screw bolt and nut, then pass through first positioning hole 3
It is installed on the sun gear of grinder station with second location hole 4, and lower disk is fixed on by grinding by the positioning pin under disk
On board, abrasive disk is repaired before use, opening lapping liquid, reaches certain requirement, during the grinding process, grinding
Block 5 on layer 2, is ground by lapping liquid and silicon carbide wafer, and ground lapping liquid passes through the groove on grinding layer 2
6 are exhausted directly in the accumulator tank of grinder station.
Following table gives the data comparison of new grinding disk and traditional abrasive disk:
As can be seen from the above table, new grinding disk solve silicon carbide wafer during the grinding process due to partial mill liquid and
Clast can not be all discharged in grinder accumulator tank from the groove 6 on abrasive disk, and the situation of particle is agglomerated into after a period of time, is led
The abnormal phenomenon for occurring slight crack, fragmentation in process of lapping, scraping deeply etc. is caused, the quality of chip is not only increased, also improves operation
The operating efficiency of member, compare from new grinding disk with traditional abrasive disk: slight crack ratio reduces 0.66%, scrapes ratio reduction deeply
0.41%, the frequency of cleaning groove 6 reduces 50%.
In the description of the present invention, it should be understood that term " coaxial ", " bottom ", " one end ", " top ", " in
The orientation of the instructions such as portion ", " other end ", "upper", " side ", " top ", "inner", " front ", " center ", " both ends " or position are closed
System is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of describing the present invention and simplifying the description, rather than
The device or element of indication or suggestion meaning must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot
It is construed as a limitation of the present invention.
In addition, term " first ", " second ", " third ", " the 4th " are used for description purposes only, and should not be understood as instruction or
It implies relative importance or implicitly indicates the quantity of indicated technical characteristic, define " first ", " second ", " the as a result,
Three ", the feature of " the 4th " can explicitly or implicitly include at least one of the features.
In the present invention unless specifically defined or limited otherwise, term " installation ", " setting ", " connection ", " Gu
Calmly ", the terms such as " being screwed on " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；
It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, can also indirectly connected through an intermediary, it can be with
It is the interaction relationship of the connection or two elements inside two elements, unless otherwise restricted clearly, for this field
For those of ordinary skill, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art,
It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired
Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.
Claims (5)
1. a kind of novel silicon carbide wafer grinding disk, including abrasive disk ontology (1), which is characterized in that the abrasive disk ontology (1)
Side be equipped with grinding layer (2), offer first positioning hole (3) in the middle part of the abrasive disk ontology (1), the grinding layer (2)
Middle part offer the second location hole (4) to match with first positioning hole (3), the side of the grinding layer (2) is fixed with
Several blocks (5) offer inclined groove (6) between several described blocks (5).
2. a kind of novel silicon carbide wafer grinding disk according to claim 1, it is characterised in that: the abrasive disk ontology
It (1) include the first disk (9) and the second disk (10), the side of first disk (9) is fixed with second be linked together
Disk (10).
3. a kind of novel silicon carbide wafer grinding disk according to claim 2, it is characterised in that: the grinding layer (2)
Avris is fixed with first flange (7), and the avris of first disk (9) is fixed with second flange (8), the first flange
(7) it is fixedly connected with second flange (8) by several screw bolt and nut.
4. a kind of novel silicon carbide wafer grinding disk according to claim 2, it is characterised in that: first disk (9)
Rounding is equipped with the junction of the second disk (10).
5. a kind of novel silicon carbide wafer grinding disk according to claim 1, it is characterised in that: groove (6) incline
Rake angle is 3 ° -15 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821611936.8U CN208866980U (en) | 2018-09-30 | 2018-09-30 | A kind of novel silicon carbide wafer grinding disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821611936.8U CN208866980U (en) | 2018-09-30 | 2018-09-30 | A kind of novel silicon carbide wafer grinding disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208866980U true CN208866980U (en) | 2019-05-17 |
Family
ID=66469390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821611936.8U Active CN208866980U (en) | 2018-09-30 | 2018-09-30 | A kind of novel silicon carbide wafer grinding disk |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208866980U (en) |
-
2018
- 2018-09-30 CN CN201821611936.8U patent/CN208866980U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240730 Address after: 410000 No. 399, Changxing Road, Changsha hi tech Development Zone, Changsha City, Hunan Province Patentee after: Hunan San'an Semiconductor Co.,Ltd. Country or region after: China Address before: 362211 enterprise operation center building, Jiangpu community, Chendai Town, Jinjiang City, Quanzhou City, Fujian Province Patentee before: FUJIAN NORSTEL MATERIAL TECHNOLOGIES Co.,Ltd. Country or region before: China |
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| TR01 | Transfer of patent right |