CN208622755U - The boron doping emitter structure of HIT solar cell - Google Patents
The boron doping emitter structure of HIT solar cell Download PDFInfo
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Abstract
The utility model belongs to technical field of solar cells, and in particular to the boron doping emitter structure of HIT solar cell.Using the film of staged boron atom doping concentration distribution, gradually become the boron atom of low concentration distribution from high concentration, and use H2The interface of corona treatment staged doping film, is further introduced into CO2Or CH4The refractive index that gas improves its optical band gap, reduces boron-doping film.The problem of this structure can efficiently solve two critical problems: one, the boron doping concentration of emitter increases, and causes the increase of emitter defect state density, reduces the open-circuit voltage of HIT solar cell；Two, the parasitics of boron mixing non-crystal silicon thin film absorbs problem, reduces the anterior optical surface performance of battery.Finally, it realizes the boron-doping emitter of low compound, superior optical property, improves the photoelectric conversion efficiency of HIT solar cell.
Description
Technical field
The invention belongs to technical field of solar cells, and in particular to the boron doping emitter structure of HIT solar cell.
Background technique
HIT (Heterojunction with intrinsic thin layer) solar cell, preparation with higher
Technology difficulty is that amorphous silicon (a-Si:H) and crystalline silicon technologies are combined the high efficiency cell configuration to be formed, mainly by Japan
Panasonic and Sanyo grasp core technology and equipment.Compared to the PERC solar cell of current large area industrialization, the HIT sun
Battery has advanced optical texture: the two-sided making herbs into wool of silicon wafer, carries out antireflective using transparent conductive film (TCO), the back side is same
Using TCO thin film, as back reflector.HIT battery is because of its front and back silk-screen printing silver paste, it is possible to be prepared into two-sided HIT
Battery and component further enhance the generated energy of photovoltaic system.In addition, HIT solar cell has advanced electricity structure: using
Doped amorphous silicon (a-Si:H) and crystalline silicon (c-Si) form heterojunction structure, are passivated silicon using intrinsic amorphous silicon (a-Si:H)
The dangling bonds on piece surface reduce the defect state density of heterojunction boundary.A-Si:H (n+)/c-Si and a-Si:H (p+)/c-Si two
Kind contact interface, belongs to carrier selective exposure, and the interface transmission of single carrier can be effectively performed.It is non-due to adulterating
The lateral electrical conductance of crystal silicon is poor, it is therefore desirable to which TCO carries out carrier lateral transport.Amorphous silicon thermal stability is poor, process warm
Degree is no more than 250-300 DEG C, it is therefore desirable to use silk-screen printing low temperature silver paste, carry out 200 DEG C of low-temperature sinterings afterwards.Cause
This, compared to the PERC solar cell that current efficiency is 22%, technical grade HIT solar cell can achieve super on Cz silicon wafer
Cross 25% photoelectric conversion efficiency.
However, the emitter of HIT solar cell is primarily present following two problems, further being promoted to battery performance has
Decisive role: 1) boron mixing non-crystal silicon leads to the defect state of boron mixing non-crystal silicon with the increase of doping concentration as emitter
The increase of density and emitter recombination current density reduces battery open circuit voltage；And boron doping amorphous silicon concentration is too low, although drop
The area Di Liaoti defect state density, but the amount of the band curvature of battery is smaller can not to form effective built in field, lead to battery
Open-circuit voltage is lower；2) boron mixing non-crystal silicon refractive index (n=3.75) higher than silicon wafer itself, cause TCO/a-Si:H (p)
Contact interface high reflectance.In addition, the optical band gap of boron mixing non-crystal silicon it is relatively narrow (E g =1.96), with the increase of doping concentration,
It will lead to its optical band gap to narrow, enhance the parasitics absorption to shortwave and Long wavelength region photon, reduce battery short circuit electric current
Density.
Summary of the invention
In view of this, key technical problem to be solved by this invention is to provide a kind of staged boron atom doping method,
Emitter defect state density and body Qu Fuhe are reduced, meanwhile, introduce CO2Or CH4The optical band gap of boron mixing non-crystal silicon thin film is improved,
The refractive index for reducing boron mixing non-crystal silicon thin film, reduces the optics parasitics absorption loss water of film, also, between pellicle film,
Using H2Corona treatment forms silicon-rich layer, further decreases the compound of film contacts interface.It is final real based on the above optimization
The emitter structure of the existing low defect density of states, high optical band gap, further increases the photoelectric conversion performance of HIT solar cell.
The present invention to solve above-mentioned technical problem the technical solution adopted is that: a kind of boron doping transmitting of HIT solar cell
Pole structure, the structure of the solar cell include: n-type silicon chip, a-Si:H (i) passivation layer, transparent conductive film (TCO), several boron
The emitter of doping concentration, H2The thin coral of silver for the silicon-rich layer and dereliction grid structure that corona treatment film contacts interface is formed
Line, the structure of the solar cell are compound, low with high optical band gap, the refractive index of low-mix boron amorphous silicon membrane, low film interface
The staged of the film defects density of states adulterates emitter structure feature.
The present invention also provides a kind of HIT solar cell boron doping emitter preparation methods, in HIT battery surface using intrinsic
Amorphous silicon carries out surface passivation, by controlling boron dopant source B2H6Gas flow realizes the rank of emitter boron-doping concentration from low to high
Ladder type doping process, and when each step switches gas flow, using H2Corona treatment forms silicon-rich layer, further drops
Low film contacts interface it is compound, while introducing CO2Or CH4Gas can make staged boron mixing non-crystal silicon thin film crystallization, generate hydrogen
Oxide/silica film or a-SiCx: H film.
Particularly, this method comprises:
Step 1): Wafer Cleaning and making herbs into wool: n-type silicon chip, the making herbs into wool and RCA for carrying out front and rear surfaces are cleaned；
Step 2: after cleaning, in the rear surface of the silicon wafer, which amorphous silicon membrane deposition: is deposited using PECVD
(i) passivation layer, phosphorus doping source PH3Gas flow deposits one layer of a-Si:H (n) on the silicon wafer front surface a-Si:H (i) layer
Film deposits the a-Si:H (i) passivation layer using radio frequency PECVD, controls boron dopant source B in the front surface of silicon wafer2H6Gas stream
Amount deposits a-Si:H (p) film that first layer is lightly doped, by H on the silicon wafer front surface a-Si:H (i) layer2Plasma
Body handles surface；A-Si:H (p) film adulterated in the second layer is then deposited, by H2Plasma treated surface；Finally sink
A-Si:H (p) film of product third layer heavy doping, by H2Plasma treated surface；
Step 3): transparent conductive film deposition: reactive plasma deposits (RPD) and deposits ito thin film；Doped amorphous silicon with
At TCO contact interface, the element doping carried out due to improving carrier mobility can have some impact on battery efficiency.
Ito thin film is analyzed, doped chemical can will continue to the deposition of ito thin film to a-Si:H/c-Si contacting permeation；
Step 4): silk-screen printing: using dereliction gate technique, and ultra-fine silver grating line is printed in front and back.In preparation process
In, the biggish metal grid lines electrode of depth-width ratio is conducive to increase the reflectivity of metal grid lines, reduces electrode bulk resistor, improves effect
Rate；
Step 5): low-temperature sintering: using low-temperature sintering, the low temperature silver paste of excellent electric conductivity, by 200 °C of sintering temperature,
Time is 30 minutes, to prevent high-temperature annealing process from generating destruction to doped layer.
Particularly, it after amorphous silicon membrane deposition step includes: cleaning, in the rear surface of the silicon wafer, is somebody's turn to do using PECVD deposition
A-Si:H (i) passivation layer, phosphorus doping source PH3Gas flow, depositing one layer on the silicon wafer front surface a-Si:H (i) layer should
A-Si:H (n) film deposits the a-Si:H (i) passivation layer using PECVD, controls the boron doping in the front surface of the silicon wafer
Source B2H6Gas flow, it is thin on the silicon wafer front surface a-Si:H (i) layer to deposit the a-Si:H (p) that the first layer is lightly doped
Film；Deposit a-Si:H (p) film adulterated in the second layer；The a-Si:H (p) for finally depositing the third layer heavy doping is thin
Film.
Particularly, it after amorphous silicon membrane deposition step includes: cleaning, in the rear surface of the silicon wafer, is somebody's turn to do using PECVD deposition
A-Si:H (i) passivation layer, phosphorus doping source PH3Gas flow deposits one layer of a- on the silicon wafer front surface a-Si:H (i) layer
Si:H (n) film deposits the a-Si:H (i) passivation layer using PECVD, controls boron dopant source B in the front surface of silicon wafer2H6
Gas flow deposits a-Si:H (p) film that the first layer is lightly doped on the silicon wafer front surface a-Si:H (i) layer, warp
Cross H2Plasma treated surface；A-Si:H (p) film adulterated in the second layer is deposited later, by H2At plasma
Manage surface；A-Si:H (p) film for finally depositing the third layer heavy doping, by H2Plasma treated surface.
Particularly, it after amorphous silicon membrane deposition step includes: cleaning, in the rear surface of the silicon wafer, is somebody's turn to do using PECVD deposition
A-Si:H (i) passivation layer, phosphorus doping source PH3Gas flow, depositing one layer on the silicon wafer front surface a-Si:H (i) layer should
A-Si:H (n) film deposits the a-Si:H (i) passivation layer using PECVD, controls boron dopant source B in the front surface of silicon wafer2H6
Gas flow, while introducing CH4, using gas flow, it is light that first layer is deposited on the silicon wafer front surface a-Si:H (i) layer
The a-SiC of dopingx: H (p) film, by H2Plasma treated surface；Then introduce CH4, deposit the a- adulterated in the second layer
SiCx: H (p) film, by H2Plasma treated surface；It is last to introduce CH simultaneously4, deposit the a- of third layer heavy doping
SiCx: H (p) film, by H2Plasma treated surface.
Particularly, it after amorphous silicon membrane deposition step includes: cleaning, in the rear surface of the silicon wafer, is somebody's turn to do using PECVD deposition
A-Si:H (i) passivation layer, phosphorus doping source PH3Gas flow, depositing one layer on the silicon wafer front surface a-Si:H (i) layer should
A-Si:H (n) film deposits the a-Si:H (i) passivation layer using PECVD, controls boron dopant source B in the front surface of silicon wafer2H6
Gas flow, while introducing CO2, the a-SiO that the first layer is lightly doped is deposited on the silicon wafer front surface a-Si:H (i) layerx:
H (p) film, by H2Plasma treated surface；Then introduce CO2, deposit the a-SiO adulterated in the second layerx: H (p)
Film, by H2Plasma treated surface；It is finally introducing CO2, deposit the a-SiO of the third layer heavy dopingx: H (p) film,
By H2Plasma treated surface.
Compared to the prior art, the technology used in the present invention has the advantages that
(1) present invention uses novel staged boron doping technique: will be by controlling boron dopant source B2H6Gas flow, it is real
The existing staged doping process of emitter boron-doping concentration from low to high；
(2) film interface H of the present invention2Corona treatment: switch gas in preparation process, and in each step
When flow, using H2Corona treatment forms silicon-rich layer, further decreases the compound of film interface, and the transmission for improving hole is special
Property；
(3) present invention is using low-refraction, the boron-doping film of high optical band gap: by introducing CO2Or CH4Gas can make
Staged boron mixing non-crystal silicon thin film crystallization generates hydro-oxidation silicon thin film or a-SiCx: H film reduces boron mixing non-crystal silicon thin film
Refractive index, improve its optical band gap；
(4) present invention deposits transparent conductive film (TCO) technology using RPD: RPD is compared to magnetron sputtering, process warm
Spend that low, deposition rate is fast, small to amorphous silicon emitter surface damage, prepared film has that crystallinity is high, roughness is low, thoroughly
It is small to cross rate height, sheet resistance；
(5) use advanced HIT solar battery structure: compared with the HIT battery structure of Sanyo, this patent is using new
The emitter structure that low compound, the low parasitics of type absorbs, and using the absorption of double-side cell structure enhancing back light, therefore have
There is higher performance advantage, is suitable for extensive, inexpensive production.
Detailed description of the invention
Fig. 1 is the new structural HIT solar cell junction composition used in the present invention；
Fig. 2 is the new structural HIT solar cell preparation method flow chart used in the present invention；
Fig. 3 is the a-Si of HIT solar cell tradition a-Si:H (p) emitter used in the present invention, staged doping:
H (p) emitter, H2The staged at corona treatment interface adulterates a-Si:H (p) emitter, H2Corona treatment interface
Staged adulterate a-SiCx: H emitter and H2The staged at corona treatment interface adulterates a-SiOx: the emitter structure of H
Figure.
Specific embodiment
It is described below for disclosing the present invention so that those skilled in the art can be realized the present invention.It is excellent in being described below
Embodiment is selected to be only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.It defines in the following description
Basic principle of the invention can be applied to other embodiments, deformation scheme, improvement project, equivalent program and do not carry on the back
Other technologies scheme from the spirit and scope of the present invention.
The present invention discloses a kind of boron doping emitter structure of HIT solar cell, and the structure of the solar cell includes: N-shaped
Silicon wafer, a-Si:H (i) passivation layer, transparent conductive film (TCO), the emitter of several boron doping concentrations, H2Corona treatment
The thin coral line of silver for the silicon-rich layer and dereliction grid structure that film contacts interface is formed, the structure of the solar cell is with high optical ribbon
The staged of compound, the low film defects density of states of gap, the refractive index of low-mix boron amorphous silicon membrane, low film interface adulterates emitter
Structure feature.
Invention additionally discloses a kind of HIT solar cell boron doping emitter preparation methods, in HIT battery surface using intrinsic
Amorphous silicon carries out surface passivation, by controlling boron dopant source B2H6Gas flow realizes the rank of emitter boron-doping concentration from low to high
Ladder type doping process, and when each step switches gas flow, using H2Corona treatment forms silicon-rich layer, further drops
Low film contacts interface it is compound, while introducing CO2Or CH4Gas can make staged boron mixing non-crystal silicon thin film crystallization, generate hydrogen
Oxide/silica film or a-SiCx: H film.
Specifically, this method comprises:
Step 1): Wafer Cleaning and making herbs into wool: n-type silicon chip, the making herbs into wool and RCA for carrying out front and rear surfaces are cleaned；
Step 2: after cleaning, in the rear surface of the silicon wafer, which amorphous silicon membrane deposition: is deposited using PECVD
(i) passivation layer, phosphorus doping source PH3Gas flow deposits one layer of a-Si:H (n) on the silicon wafer front surface a-Si:H (i) layer
Film deposits the a-Si:H (i) passivation layer using radio frequency PECVD, controls boron dopant source B in the front surface of silicon wafer2H6Gas stream
Amount deposits a-Si:H (p) film that first layer is lightly doped, by H on the silicon wafer front surface a-Si:H (i) layer2Plasma
Body handles surface；A-Si:H (p) film adulterated in the second layer is then deposited, by H2Plasma treated surface；Finally sink
A-Si:H (p) film of product third layer heavy doping, by H2Plasma treated surface；
Step 3): transparent conductive film deposition: reactive plasma deposits (RPD) and deposits ito thin film；Doped amorphous silicon with
At TCO contact interface, the element doping carried out due to improving carrier mobility can have some impact on battery efficiency.
Ito thin film is analyzed, doped chemical can will continue to the deposition of ito thin film to a-Si:H/c-Si contacting permeation；
Step 4): silk-screen printing: using dereliction gate technique, and ultra-fine silver grating line is printed in front and back.In preparation process
In, the biggish metal grid lines electrode of depth-width ratio is conducive to increase the reflectivity of metal grid lines, reduces electrode bulk resistor, improves effect
Rate；
Step 5): low-temperature sintering: using low-temperature sintering, the low temperature silver paste of excellent electric conductivity, by 200 °C of sintering temperature,
Time is 30 minutes, to prevent high-temperature annealing process from generating destruction to doped layer.
The following are specific embodiments of the present invention:
Embodiment 1
As shown in fig. 1, HIT solar battery structure provided in this embodiment is with high optical band gap, low-mix boron amorphous silicon
The refractive index of film, the low defect density of states, staged doping emitter structure, the structure of the solar cell is from top to bottom successively
It include: 6 for n-type silicon chip, 5 be a-Si:H (i) passivation layer, and 2 be transparent conductive film (TCO), and 4 be three kinds of boron doping concentrations
A-Si:H (p), 3 be H2The silicon-rich layer and 1 that corona treatment film contacts interface is formed are the thin coral line of silver without main grid.Such as
It is the HIT solar cell preparation method flow chart that staged boron doping a-Si:H (p) is emitter shown in Fig. 2.This implementation case
Example 1 is emitter structure shown in Fig. 3 (b).
Above structure is to be prepared by the following method acquisition with the HIT solar cell that a-Si:H (p) is emitter:
(1) N-shaped monocrystalline silicon piece is cleaned with RCA technique, specifically includes that SPM (H2SO4:H2O2=3:1) removal have
Machine object, DHF(HF:H2O=1:30) removing oxide layer is removed, with APM (NH4OH:H2O2:H2O=1:1:5) removal particle, HPM(HCl:
H2O2:H2O=1:1:6) removal metal impurities.
(2) amorphous silicon membrane deposits: after cleaning, in the rear surface of silicon wafer, using 13.56 MHz radio frequency PECVD, silane
(SiH4) it is used as presoma, SiH4And H2Respectively 100-400 sccm and 10-50 sccm, 30-60 W of power, air pressure
500 mTorr and temperature are 250 DEG C, deposit the a-Si:H (i) passivation layer of 5-8 nm, phosphorus doping source PH3Gas flow,
Using 7-15 sccm gas flows, one layer of a-Si:H (n) film is deposited on silicon wafer front surface a-Si:H (i) layer.In silicon
The front surface of piece deposits the a-Si:H (i) passivation layer of 5-8 nm using 13.56 MHz radio frequency PECVD, controls boron doping
Source B2H6Gas flow, a-Si:H (p) growth rate is 0.4-0.5 nm/s, using 20 sccm gas flows, in silicon wafer
A-Si:H (p) film for 2-3 nm that first layer is lightly doped is deposited on front surface a-Si:H (i) layer；Then use 30
3-5 nm a-Si:H (p) films adulterated in the sccm gas flow deposition second layer；Finally use 40 sccm gas streams
Amount deposits a-Si:H (p) film of 4-5 nm of third layer heavy doping；
(3) ito thin film, the target of use are then deposited in battery front and rear surfaces by reactive plasma deposition (RPD)
The In for being 5% for mass fraction2O3:SnO2Mixture, depositing temperature are 200-250 DEG C, 1-3 W of power density, Ar air-flow
Measure 250-400 sccm, O22-10 sccm of flow；
(4) silk-screen printing: using dereliction gate technique, and ultra-fine 12-20 silver grating lines are printed in front and back；
(5) low-temperature sintering: 200 °C of sintering temperature, the time is 30 minutes, to prevent high-temperature annealing process from generating to doped layer
It destroys.Silver paste is needed using low-temperature sintering, the low temperature silver paste of excellent electric conductivity.
Embodiment 2
As shown in fig. 1, HIT solar battery structure provided in this embodiment is with high optical band gap, low-mix boron amorphous silicon
The refractive index of film, the low defect density of states, staged doping emitter structure, the structure of the solar cell is from top to bottom successively
It include: 6 for n-type silicon chip, 5 be a-Si:H (i) passivation layer, and 2 be transparent conductive film (TCO), and 4 be three kinds of boron doping concentrations
A-Si:H (p), 3 be H2The silicon-rich layer and 1 that corona treatment film contacts interface is formed are the thin coral line of silver.As shown in Fig. 2,
For the HIT solar cell preparation method flow chart that staged boron doping a-Si:H (p) is emitter.The implementation case 2 is Fig. 3
(c) emitter structure shown in.
Above structure is to be prepared by the following method acquisition with the HIT solar cell that a-Si:H (p) is emitter:
(1) N-shaped monocrystalline silicon piece is cleaned with RCA method, specifically includes that SPM (H2SO4:H2O2=3:1) removal have
Machine object, DHF(HF:H2O=1:30) removing oxide layer is removed, with APM (NH4OH:H2O2:H2O=1:1:5) removal particle, HPM(HCl:
H2O2:H2O=1:1:6) removal metal impurities.
(2) amorphous silicon membrane deposits: after cleaning, in the rear surface of silicon wafer, using 13.56 MHz radio frequency PECVD, silane
(SiH4) it is used as presoma, SiH4And H2Respectively 100-400 sccm and 10-50 sccm, 30-60 W of power, air pressure
500 mTorr and temperature are 250 DEG C, deposit the a-Si:H (i) passivation layer of 5-8 nm, phosphorus doping source PH3Gas flow,
Using 7-15 sccm gas flow, one layer of a-Si:H (n) film is deposited on silicon wafer front surface a-Si:H (i) layer, by 20
The H of s2Plasma treated surface.The a- of 5-8 nm is deposited using 13.56 MHz radio frequency PECVD in the front surface of silicon wafer
Si:H (i) passivation layer controls boron dopant source B2H6Gas flow, a-Si:H (p) growth rate are 0.4-0.5 nm/s, are adopted
With 20 sccm gas flows, the a-Si for 2-3 nm that first layer is lightly doped is deposited on silicon wafer front surface a-Si:H (i) layer:
H (p) film, by the H of 20 s2Plasma treated surface；It is then deposited in the second layer and is mixed using 30 sccm gas flows
3-5 miscellaneous nm a-Si:H (p) films, by the H of 20 s2Plasma treated surface；Finally use 40 sccm gases
Flow deposits a-Si:H (p) film of 4-5 nm of third layer heavy doping, by the H of 20 s2Plasma treated surface；
(3) ito thin film, the target of use are then deposited in battery front and rear surfaces by reactive plasma deposition (RPD)
The In for being 5% for mass fraction2O3:SnO2, depositing temperature is 200-250 DEG C, 1-3 W of power density, Ar throughput 250
- 400 sccm, O22-10 sccm of flow；
(4) silk-screen printing: using dereliction gate technique, and ultra-fine 12-20 silver grating lines are printed in front and back；
(5) low-temperature sintering: 200 °C of sintering temperature, the time is 30 minutes, to prevent high-temperature annealing process from generating to doped layer
It destroys.Silver paste is needed using low-temperature sintering, the low temperature silver paste of excellent electric conductivity.
Embodiment 3
As shown in fig. 1, HIT solar battery structure provided in this embodiment is with high optical band gap, low-mix boron amorphous silicon
The refractive index of film, the low defect density of states, staged doping emitter structure, the structure of the solar cell is from top to bottom successively
It include: 6 for n-type silicon chip, 5 be a-Si:H (i) passivation layer, and 2 be transparent conductive film (TCO), and 4 be three kinds of boron doping concentrations
A-Si:H (p), 3 be H2The silicon-rich layer and 1 that corona treatment film contacts interface is formed are the thin coral line of silver.As shown in Fig. 2,
For the HIT solar cell preparation method flow chart that staged boron doping a-Si:H (p) is emitter.The implementation case 2 is Fig. 3
(d) emitter structure shown in.
Above structure is to be prepared by the following method acquisition with the HIT solar cell that a-Si:H (p) is emitter:
(1) N-shaped monocrystalline silicon piece is cleaned with RCA technique, specifically includes that SPM (H2SO4:H2O2=3:1) removal have
Machine object, DHF(HF:H2O=1:30) removing oxide layer is removed, with APM (NH4OH:H2O2:H2O=1:1:5) removal particle, HPM(HCl:
H2O2:H2O=1:1:6) removal metal impurities.
(2) amorphous silicon membrane deposits: after cleaning, in the rear surface of silicon wafer, using 13.56 MHz radio frequency PECVD, silane
(SiH4) it is used as presoma, SiH4And H2Respectively 100-400 sccm and 10-50 sccm, 30-60 W of power, air pressure
500 mTorr and temperature are 250 DEG C, deposit the a-Si:H (i) passivation layer of 5-8 nm, phosphorus doping source PH3Gas flow,
Using 7-15 sccm gas flow, one layer of a-Si:H (n) film is deposited on silicon wafer front surface a-Si:H (i) layer, by 20
The H of s2Plasma treated surface.The a- of 5-8 nm is deposited using 13.56 MHz radio frequency PECVD in the front surface of silicon wafer
Si:H (i) passivation layer controls boron dopant source B2H6Gas flow.Using 20 sccm boron dopant source B2H6Gas flow draws simultaneously
Enter CH4, using 5-20 sccm gas flows, first layer is lightly doped 2-are deposited on silicon wafer front surface a-Si:H (i) layer
The a-SiC of 3 nmx: H (p) film, by the H of 20 s2Plasma treated surface；Then use 30 sccm boron dopant sources
B2H6Gas flow, while introducing CH4, using 3-5 nm a- adulterated in 5-20 sccm gas flows deposition second layer
SiCx: H (p) film, by the H of 20 s2Plasma treated surface；Finally use 40 sccm boron dopant source B2H6Gas stream
Amount, while introducing CH4, using 5-20 sccm gas flows, deposit the a-SiC of 4-5 nm of third layer heavy dopingx:H
(p) film, by the H of 20 s2Plasma treated surface；
(3) ito thin film, the target of use are then deposited in battery front and rear surfaces by reactive plasma deposition (RPD)
The In for being 5% for mass fraction2O3:SnO2, depositing temperature is 200-250 DEG C, 1-3 W of power density, Ar throughput 250
- 400 sccm, O22-10 sccm of flow；
(4) silk-screen printing: using dereliction gate technique, and ultra-fine 12-20 silver grating lines are printed in front and back；
(5) low-temperature sintering: 200 °C of sintering temperature, the time is 30 minutes, to prevent high-temperature annealing process from generating to doped layer
It destroys.Silver paste is needed using low-temperature sintering, the low temperature silver paste of excellent electric conductivity.
Embodiment 4
As shown in fig. 1, HIT solar battery structure provided in this embodiment is with high optical band gap, low-mix boron amorphous silicon
The refractive index of film, the low defect density of states, staged doping emitter structure, the structure of the solar cell is from top to bottom successively
It include: 6 for n-type silicon chip, 5 be a-Si:H (i) passivation layer, and 2 be transparent conductive film (TCO), and 4 be three kinds of boron doping concentrations
A-Si:H (p), 3 be H2The silicon-rich layer and 1 that corona treatment film contacts interface is formed are the thin coral line of silver.As shown in Fig. 2,
For the HIT solar cell preparation method flow chart that staged boron doping a-Si:H (p) is emitter.The implementation case 2 is Fig. 3
(e) emitter structure shown in.
Above structure is to be prepared by the following method acquisition with the HIT solar cell that a-Si:H (p) is emitter:
(1) N-shaped monocrystalline silicon piece is cleaned with RCA technique, specifically includes that SPM (H2SO4:H2O2=3:1) removal have
Machine object, DHF(HF:H2O=1:30) removing oxide layer is removed, with APM (NH4OH:H2O2:H2O=1:1:5) removal particle, HPM(HCl:
H2O2:H2O=1:1:6) removal metal impurities.
(2) amorphous silicon membrane deposits: after cleaning, in the rear surface of silicon wafer, using 13.56 MHz radio frequency PECVD, silane
(SiH4) it is used as presoma, SiH4And H2Respectively 100-400 sccm and 10-50 sccm, 30-60 W of power, air pressure
500 mTorr and temperature are 250 DEG C, deposit the a-Si:H (i) passivation layer of 5-8 nm, phosphorus doping source PH3Gas flow,
Using 7-15 sccm gas flow, one layer of a-Si:H (n) film is deposited on silicon wafer front surface a-Si:H (i) layer, by 20
The H of s2Plasma treated surface.The a- of 5-8 nm is deposited using 13.56 MHz radio frequency PECVD in the front surface of silicon wafer
Si:H (i) passivation layer, using 20 sccm gas flow boron dopant source B2H6Gas flow, while introducing CO2, using 5-20
Sccm gas flow deposits the a-SiO for 2-3 nm that first layer is lightly doped on silicon wafer front surface a-Si:H (i) layerx:H
(p) film, by the H of 20 s2Plasma treated surface；Then use 30 sccm boron dopant source B2H6Gas flow, simultaneously
Introduce CO2, using 3-5 nm a-SiO adulterated in 5-20 sccm gas flows deposition second layerx: H (p) film, warp
Cross the H of 20 s2Plasma treated surface；Finally use 40 sccm boron dopant source B2H6Gas flow, while introducing CO2, adopt
With 5-20 sccm gas flows, the a-SiC of 4-5 nm of third layer heavy doping is depositedx: H (p) film, by 20 s'
H2Plasma treated surface；
(3) ito thin film, the target of use are then deposited in battery front and rear surfaces by reactive plasma deposition (RPD)
The In for being 5% for mass fraction2O3:SnO2, depositing temperature is 200-250 DEG C, 1-3 W of power density, Ar throughput 250
- 400 sccm, O22-10 sccm of flow；
(4) silk-screen printing: using dereliction gate technique, and ultra-fine 12-20 silver grating lines are printed in front and back；
(5) low-temperature sintering: 200 °C of sintering temperature, the time is 30 minutes, to prevent high-temperature annealing process from generating to doped layer
It destroys.Silver paste is needed using low-temperature sintering, the low temperature silver paste of excellent electric conductivity.
It should be understood by those skilled in the art that foregoing description and the embodiment of the present invention shown in the drawings are only used as illustrating
And it is not intended to limit the present invention.The purpose of the present invention has been fully and effectively achieved.Function and structural principle of the invention exists
It shows and illustrates in embodiment, under without departing from the principle, embodiments of the present invention can have any deformation or modification.
Claims (1)
1. a kind of boron doping emitter structure of HIT solar cell, which is characterized in that the structure of the solar cell includes: n-type silicon
Piece, a-Si:H (i) passivation layer, transparent conductive film TCO, the emitter of several boron doping concentrations, H2 corona treatment film
The thin coral line of silver for the silicon-rich layer and dereliction grid structure that contact interface is formed, the structure of the solar cell are with high optical band gap, low
The staged of compound, the low film defects density of states of the refractive index of boron mixing non-crystal silicon thin film, low film interface adulterates emitter structure
Feature.
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