CN208433399U - 一种带有散热结构的芯片 - Google Patents
一种带有散热结构的芯片 Download PDFInfo
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- CN208433399U CN208433399U CN201820510009.0U CN201820510009U CN208433399U CN 208433399 U CN208433399 U CN 208433399U CN 201820510009 U CN201820510009 U CN 201820510009U CN 208433399 U CN208433399 U CN 208433399U
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- 230000005855 radiation Effects 0.000 claims abstract description 53
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 35
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000741 silica gel Substances 0.000 claims abstract description 18
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000017525 heat dissipation Effects 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 7
- 210000005239 tubule Anatomy 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 4
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims 1
- 239000000428 dust Substances 0.000 description 19
- 238000001816 cooling Methods 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 7
- 230000007774 longterm Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
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- 238000004140 cleaning Methods 0.000 description 3
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- 238000005265 energy consumption Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005662 electromechanics Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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CN201820510009.0U CN208433399U (zh) | 2018-04-11 | 2018-04-11 | 一种带有散热结构的芯片 |
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CN201820510009.0U CN208433399U (zh) | 2018-04-11 | 2018-04-11 | 一种带有散热结构的芯片 |
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CN208433399U true CN208433399U (zh) | 2019-01-25 |
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CN201820510009.0U Active CN208433399U (zh) | 2018-04-11 | 2018-04-11 | 一种带有散热结构的芯片 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114137030A (zh) * | 2021-11-26 | 2022-03-04 | 荣成歌尔科技有限公司 | 液态金属分布检测方法、装置、设备及可读存储介质 |
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- 2018-04-11 CN CN201820510009.0U patent/CN208433399U/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114137030A (zh) * | 2021-11-26 | 2022-03-04 | 荣成歌尔科技有限公司 | 液态金属分布检测方法、装置、设备及可读存储介质 |
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20201111 Address after: No.102, No.1, second lane, Dalang Industrial Zone, Hongxing community, Songgang street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen feisida photoelectric Co., Ltd Address before: 518000, Huatai District, Futian District Mei Xiang Road, Guangdong, Shenzhen 7-461 Patentee before: Feng Xiufen |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210107 Address after: 225000 Dongting Lake Road, Gaoyou Economic Development Zone, Yangzhou City, Jiangsu Province Patentee after: YANGZHOU GANGXIN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 518105 No.102, Lane 2, Dalang Industrial Zone, Hongxing community, Songgang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Shenzhen feisida photoelectric Co., Ltd |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220113 Address after: 313000 room 1501, 15 / F, building h, headquarters, No. 1188, District Fu Road, Wuxing District, Huzhou City, Zhejiang Province Patentee after: Tianxin Tiansi (Huzhou) Intelligent Technology Co.,Ltd. Address before: 225000 Dongting Lake Road, Gaoyou Economic Development Zone, Yangzhou City, Jiangsu Province Patentee before: YANGZHOU GANGXIN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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TR01 | Transfer of patent right |