CN208336159U - A kind of cleaning device plating membrane carrier and film surface foreign matter for hetero-junction solar cell - Google Patents
A kind of cleaning device plating membrane carrier and film surface foreign matter for hetero-junction solar cell Download PDFInfo
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- CN208336159U CN208336159U CN201820699761.4U CN201820699761U CN208336159U CN 208336159 U CN208336159 U CN 208336159U CN 201820699761 U CN201820699761 U CN 201820699761U CN 208336159 U CN208336159 U CN 208336159U
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- membrane carrier
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- foreign matter
- hollow pipe
- film
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of cleaning devices that membrane carrier and film surface foreign matter are plated for hetero-junction solar cell.It include coating film production line and with after-blow sweeping device, preceding blow device and after-blow sweeping device include hollow pipe and the vent line that connect with hollow pipe, what is arranged on each hollow pipe is in the gas hole of 30 ° of -60 ° of angle directions arrangement with plating membrane carrier, plate membrane carrier before load by preceding blow device cleaning plating membrane carrier on fragment, dust and foreign matter, plate membrane carrier on it is silicon chip film-coated after and before unloading piece by after-blow sweeping device clean plated film after silicon wafer surface.After adopting the above structure, the foreign matter avoided in film forming cavity falls to the decline at film quality for causing itself on plated film silicon wafer, it avoids and printing quality is impacted in film forming rear surface attachment foreign matter screen-printed metallization forming process, it solves the problems such as tile occlusion in production process, powder residual, foreign matter adhere to, improves the yields in HJT battery production and improve production efficiency.
Description
Technical field
It is specifically a kind of for hetero-junctions electricity the present invention relates to a kind of manufacturing technology for efficient heterojunction battery
The cleaning device of membrane carrier and film surface foreign matter is plated in pond, belongs to technical field of solar cell manufacturing.
Background technique
For HJT battery, the preparation of transparent conductive film (TCO) is as the crucial work in HJT cell production process
Sequence, generally using reactive plasma deposition and magnetically controlled DC sputtering two ways, corresponding the transparent of both plated film modes is led
Conductive film is generally two kinds of In2O3:W (IWO) and In2O3:Sn (ITO), corresponding IWO target during deposition forms film
The phenomenon that material and ITO target fall off there are target particle, there are apparent ITO, IWO powder on support plate, in addition, plated film is formed
The fragment generated in the process is liable to stick to support plate surface, above-mentioned two situations be not only easy to influence the integrality of plating film outward appearance and
(that is support plate is easy to attach during TCO equipment operation as the plating membrane carrier of silicon wafer matrix for the performance of film layer itself
Upper fragment, target powder and foreign matter, these, which are of the presence of an anomaly with, be easy to cause plated film to lack, and target powder is easy on support plate
The moisture absorbed in air impacts the performance of plated film), and it is low and raw to result in the yields in HJT battery production
Produce inefficiency.
Summary of the invention
The technical problem to be solved in the present invention is to provide in a kind of TCO thin film production process for being able to solve HJT battery
The problems such as tile occlusion, powder residual, foreign matter attachment, so as to improve the yields in HJT battery production and improve production efficiency
For hetero-junction solar cell plating membrane carrier and film surface foreign matter cleaning device.
In order to solve the above-mentioned technical problem, of the invention for the clear of hetero-junction solar cell plating membrane carrier and film surface foreign matter
Clean device, including for conveying the coating film production line for plating membrane carrier and the preceding blow device that coating film production line feeding area is arranged in
With the after-blow sweeping device that coating film production line discharging area is arranged in, preceding blow device and after-blow sweeping device include to produce along plated film
The hollow pipe of line width direction arrangement and the vent line for connecting and be used to be passed through to hollow pipe compressed gas with hollow pipe, respectively
What is arranged on root hollow pipe is in the gas hole of 30 ° of -60 ° of angle directions arrangement with plating membrane carrier, and plating membrane carrier is passed through before load
Fragment, dust and the foreign matter on preceding blow device cleaning plating membrane carrier are crossed, is plated silicon chip film-coated afterwards and before unloading piece on membrane carrier
The surface of silicon wafer after after-blow sweeping device cleans plated film.
The length of blow device and after-blow sweeping device before the plating membrane carrier is less than respectively in the direction of the width.
The preceding blow device and after-blow sweeping device include the hollow pipe positioned at plating membrane carrier upper and lower, are located above
The upper surface distance of hollow pipe distance plating membrane carrier is 2-10cm, underlying hollow pipe distance plating membrane carrier lower surface distance
2-10cm and using support plate be center axis in mirror image be distributed.
The hollow pipe diameter of the preceding blow device and after-blow sweeping device is 2-5cm, and gas hole is evenly arranged on hollow pipe,
The size of gas hole is 1-2mm, is divided into 0.5-3cm.
The compressed air pressure of the preceding blow device is 0.3-0.7MPa, and the compressed air pressure of after-blow sweeping device is
0.05-0.2MPa。
The material of the hollow pipe is chosen as PVC material, and the material of vent line is PU material.
After above-mentioned structure, it is ensured that clean surface state of the silicon wafer before flowing into silkscreen process after film forming, one
The foreign matter that aspect avoids in film forming cavity falls to the decline at film quality for causing itself on plated film silicon wafer, on the other hand keeps away
Exempt to impact printing quality in film forming rear surface attachment foreign matter screen-printed metallization forming process, has solved HJT electricity
The problems such as tile occlusion, powder residual in the TCO thin film production process in pond, foreign matter adhere to, so as to improve HJT battery production
In yields and improve production efficiency.
Detailed description of the invention
Fig. 1 is that structure of the utility model for hetero-junction solar cell plating membrane carrier and the cleaning device of film surface foreign matter is shown
It is intended to.
Specific embodiment
With reference to the accompanying drawings and detailed description, to the utility model for hetero-junction solar cell plating membrane carrier and film layer
The cleaning device of Superficial Foreign Body is described in further detail.
As shown, the cleaning device that membrane carrier and film surface foreign matter are plated for hetero-junction solar cell of the invention, including
Exist for conveying the coating film production line of plating membrane carrier 1 and the preceding blow device 2 of coating film production line feeding area being arranged in and is arranged
The after-blow sweeping device 3 of coating film production line discharging area, preceding blow device 2 and after-blow sweeping device 3 include wide along coating film production line
The hollow pipe 4 of degree direction arrangement and the vent line 5 for connecting and be used to be passed through to hollow pipe compressed gas with hollow pipe, each
What is arranged on hollow pipe 4 is in the gas hole 6 of 30 ° of -60 ° of angle directions arrangement with plating membrane carrier, avoids vertically-supplying air leaching filtering plating
The damage of membrane carrier surface bring silicon chip surface, while fragment risk is reduced, it plates membrane carrier 1 and passes through preceding blow device before load
Fragment, dust and foreign matter etc. on 2 cleaning plating membrane carriers, guarantee that clean state is being presented into plated film cavity front bearing plate surface,
Quality of forming film is not impacted, plate membrane carrier 1 on it is silicon chip film-coated after and before unloading piece by after-blow sweeping device 3 clean plated film
The surface of silicon wafer afterwards, it is ensured that thus on the one hand clean surface state of the silicon wafer before flowing into silkscreen process after film forming avoids
Foreign matter in film forming cavity falls to the decline at film quality for causing itself on plated film silicon wafer, on the other hand avoids film forming
Printing quality is impacted in rear surface attachment foreign matter screen-printed metallization forming process.
Further, blow device and after-blow sweeping device before described plating membrane carrier 1 is respectively smaller than in the direction of the width
Length, described preceding blow device 2 and after-blow sweeping device 3 include the hollow pipe positioned at plating membrane carrier upper and lower, are located at upper
The upper surface distance of the hollow pipe distance plating membrane carrier of side is 2-10cm, underlying hollow pipe distance plating membrane carrier lower surface
Distance 2-10cm and be that center axis is distributed in mirror image using support plate, be located at during plated film carrier movement preceding blow device and after
The middle position of blow device, it is ensured that upper and lower surface is able to achieve effective cleaning, described preceding blow device 2 and after-blow sweeping device
3 hollow pipe diameter is 2-5cm, and gas hole 6 is evenly arranged on hollow pipe, and the size of gas hole is 1-2mm, is divided into 0.5-
3cm, it is compressed air that vent line, which accesses gas, due to feeding area into support plate process be unloaded board status, and discharging area be
Wind leaching is carried out in the state of carrier for bearing plated film silicon wafer, therefore feeding area is higher than discharging area using compressed air pressure, thus institute
The compressed air pressure control for the preceding blow device 2 said is 0.3-0.7MPa, and the compressed air pressure control of after-blow sweeping device 3 is
0.05-0.2MPa, the material of described hollow pipe 4 are chosen as PVC material, and the material of vent line 5 is PU material.
It proves by verifying, is produced by using the device, the electrical property of test battery, amount are carried out after the completion of production
Efficiency is produced up to 22.7%, yield can be seen that by above-mentioned comparative experiments up to 98% and add this technical solution by equipment end
Can play the role of good surface cleaning to silicon wafer after plating membrane carrier and plated film, from the output result efficiency at electrical property end and
Yields has to be promoted by a relatively large margin.
Claims (6)
1. a kind of cleaning device for plating membrane carrier and film surface foreign matter for hetero-junction solar cell, it is characterised in that: including being used for
Conveying, which plates the coating film production line of membrane carrier (1) and the preceding blow device (2) of coating film production line feeding area is arranged in and is arranged, to exist
The after-blow sweeping device (3) of coating film production line discharging area, the preceding blow device (2) and after-blow sweeping device (3) include along plating
The hollow pipe (4) and connect with hollow pipe and be used to be passed through the logical of compressed gas to hollow pipe that film production line width direction is arranged
Air pipe (5), what is arranged on each hollow pipe (4) is in the gas hole of 30 ° of -60 ° of angle directions arrangement with plating membrane carrier
(6), plating membrane carrier (1) plates fragment, dust and foreign matter on membrane carrier by preceding blow device (2) cleaning before load,
It is described plating membrane carrier (1) on it is silicon chip film-coated after and before unloading piece by after-blow sweeping device (3) cleaning plated film after silicon wafer surface.
2. the cleaning device described in accordance with the claim 1 for plating membrane carrier and film surface foreign matter for hetero-junction solar cell, special
Sign is: the length of blow device and after-blow sweeping device before plating membrane carrier (1) is less than respectively in the direction of the width.
3. the cleaning device according to claim 1 or 2 that membrane carrier and film surface foreign matter are plated for hetero-junction solar cell,
Be characterized in that: the preceding blow device (2) and after-blow sweeping device (3) include the hollow pipe positioned at plating membrane carrier upper and lower, position
It is 2-10cm in the upper surface distance of the hollow pipe distance plating membrane carrier of top, underlying hollow pipe is under plating membrane carrier
Surface distance 2-10cm and using support plate be center axis in mirror image be distributed.
4. the cleaning device described in accordance with the claim 3 for plating membrane carrier and film surface foreign matter for hetero-junction solar cell, special
Sign is: the hollow pipe diameter of the preceding blow device (2) and after-blow sweeping device (3) is 2-5cm, and gas hole (6) is evenly arranged on
On hollow pipe, the size of gas hole is 1-2mm, is divided into 0.5-3cm.
5. special according to claim 4 for hetero-junction solar cell plating membrane carrier and the cleaning device of film surface foreign matter
Sign is: the compressed air pressure of the preceding blow device (2) is 0.3-0.7MPa, the compressed air pressure of after-blow sweeping device (3)
It is by force 0.05-0.2MPa.
6. special according to claim 5 for hetero-junction solar cell plating membrane carrier and the cleaning device of film surface foreign matter
Sign is: the material of the hollow pipe (4) is chosen as PVC material, and the material of vent line (5) is PU material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820699761.4U CN208336159U (en) | 2018-05-11 | 2018-05-11 | A kind of cleaning device plating membrane carrier and film surface foreign matter for hetero-junction solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820699761.4U CN208336159U (en) | 2018-05-11 | 2018-05-11 | A kind of cleaning device plating membrane carrier and film surface foreign matter for hetero-junction solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN208336159U true CN208336159U (en) | 2019-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820699761.4U Active CN208336159U (en) | 2018-05-11 | 2018-05-11 | A kind of cleaning device plating membrane carrier and film surface foreign matter for hetero-junction solar cell |
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| CN (1) | CN208336159U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111192813A (en) * | 2020-01-21 | 2020-05-22 | 江苏爱康能源研究院有限公司 | RPD equipment maintenance method for TCO coating of heterojunction solar cell |
| CN113764543A (en) * | 2021-11-10 | 2021-12-07 | 晋能清洁能源科技股份公司 | Method for improving amorphous silicon surface cleanliness of solar cell in coating production |
-
2018
- 2018-05-11 CN CN201820699761.4U patent/CN208336159U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111192813A (en) * | 2020-01-21 | 2020-05-22 | 江苏爱康能源研究院有限公司 | RPD equipment maintenance method for TCO coating of heterojunction solar cell |
| CN113764543A (en) * | 2021-11-10 | 2021-12-07 | 晋能清洁能源科技股份公司 | Method for improving amorphous silicon surface cleanliness of solar cell in coating production |
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