CN208256643U - A kind of high-power PIN diode core assembly encapsulating structure - Google Patents

A kind of high-power PIN diode core assembly encapsulating structure Download PDF

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Publication number
CN208256643U
CN208256643U CN201821005197.8U CN201821005197U CN208256643U CN 208256643 U CN208256643 U CN 208256643U CN 201821005197 U CN201821005197 U CN 201821005197U CN 208256643 U CN208256643 U CN 208256643U
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CN
China
Prior art keywords
insulator
pin diode
diode core
box
conductor
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Active
Application number
CN201821005197.8U
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Chinese (zh)
Inventor
卢国良
包明
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SICHUAN JIULI MICROWAVE Co Ltd
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SICHUAN JIULI MICROWAVE Co Ltd
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Priority to CN201821005197.8U priority Critical patent/CN208256643U/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

The utility model discloses a kind of high-power PIN diode core assembly encapsulating structures, including box body, cover board and PIN diode core, package cavity is equipped in the box body, package cavity bottom is equipped with substrate mounting groove, substrate is provided in substrate mounting groove, two groups of PIN diode cores are installed on substrate, insulator there are three being set on box body, the inner conductor of two of them insulator is connect with the anode of PIN diode core respectively, it is connect after two groups of PIN diode core common cathodes with the inner conductor of third insulator, scolding tin seals between insulator and insulator mounting groove, box body positioned at package cavity accent end is equipped with slot cover, the surface of slot cover is equipped with true qualities conductive oxide layer, cover board laser welding forms closed structure with box body in slot cover.Itself in application, can effectively solve the problems, such as existing high-power PIN diode core encapsulation it is resistance to force down, poor air-tightness.

Description

A kind of high-power PIN diode core assembly encapsulating structure
Technical field
The utility model relates to electron device package fields, and in particular to a kind of high-power PIN diode core assembly encapsulation Structure.
Background technique
Existing PIN diode encapsulating structure is all generally to be sealed to form cavity by plate substrate and peripheral frame, electrode Between be only capable of being resistant to 1KV electric field under normal pressure, and under hypobaric then pressure resistance it is lower, 1KV is also not achieved, and it mostly can only It is welded using parallel soldering and sealing or soldering sealing, parallel soldering and sealing needs the higher parallel sealing device of price, high production cost, And bad rate is higher for soldering sealing, the problem of be easy to causeing poor air-tightness.
Utility model content
The utility model is in view of the deficienciess of the prior art, provide a kind of high-power PIN diode core assembly encapsulation knot Structure, in application, can effectively solve the problems, such as existing high-power PIN diode core encapsulation it is resistance to force down, poor air-tightness.
The utility model is achieved through the following technical solutions:
A kind of high-power PIN diode core assembly encapsulating structure, including box body, cover board and PIN diode core, the box body For 6 line aluminium alloy materials, cover board is 4 line aluminium alloy materials, and package cavity, package cavity top opening, package cavity are equipped in box body Bottom is equipped with substrate mounting groove, is provided with substrate in substrate mounting groove, two groups of PIN diode cores is equipped on substrate, in box It being set on the outer wall of body there are three insulator mounting groove, the middle position of each insulator mounting groove is equipped with insulator mounting hole, Insulator mounting hole is connected to package cavity and box portion outside, and insulator, the inner conductor of insulator are equipped in insulator mounting hole In package cavity, the outer conductor of insulator is located at outside box body, the inner conductor of two of them insulator respectively with PIN diode core Anode connection, connect with the inner conductor of third insulator after two groups of PIN diode core common cathodes, insulator and insulator peace Scolding tin seals between tankage, and the box body positioned at package cavity accent end is equipped with slot cover, and it is conductive that the surface of slot cover is equipped with true qualities Oxide layer, cover board laser welding form closed structure with box body in slot cover.
Preferably, pass through gold wire bonding between the anode of the PIN diode core, cathode and the inner conductor of insulator.
Preferably, the anode of the PIN diode core, cathode and the spun gold being connected with the electrode of PIN diode core, Insulator inner conductor is remained above the interval equal to 0.6mm with box body
Preferably, the substrate is aluminum oxide base material, and thickness is more than or equal to 0.6mm.
Preferably, the width of the slot cover and trough rim width are all larger than equal to 0.5mm.
Preferably, the gold wire bonding quantity between the anode of the PIN diode core and the inner conductor of insulator is at least 2, the gold wire bonding quantity between PIN diode core common cathode and the inner conductor of insulator is at least 3.
Preferably, the inner conductor of the insulator and substrate top surface are tangent.
Preferably, the insulator is glass insulator.
The utility model has the following advantages and benefits:
1, a kind of high-power PIN diode core assembly encapsulating structure of the utility model, can solve existing high-power PIN bis- Pole die package resistance to the problem of forcing down, effectively improve its tolerance electric field strength under normal pressure, environment under low pressure.
2, a kind of high-power PIN diode core assembly encapsulating structure of the utility model, can effectively improve PIN diode core The air-tightness of component package.
3, a kind of high-power PIN diode core assembly encapsulating structure of the utility model, production cost is low, and properties of product can It leans on.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the utility model embodiment, constitutes the one of the application Part does not constitute the restriction to the utility model embodiment.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of the utility model;
Fig. 2 is the front section view of the utility model;
Fig. 3 is the side sectional view of the utility model;
Fig. 4 is the box body side view of the utility model.
Label and corresponding parts title in attached drawing:
1- box body, 2- cover board, 3-PIN diode core, 4- package cavity, 5- substrate mounting groove, 6- substrate, the installation of 7- insulator Slot, 8- insulator mounting hole, 9- insulator, 10- spun gold, 11- slot cover, 12- trough rim.
Specific embodiment
For the purpose of this utility model, technical solution and advantage is more clearly understood, below with reference to embodiment and attached drawing, The utility model is described in further detail, and the exemplary embodiment and its explanation of the utility model are only used for explaining this Utility model is not intended to limit the scope of the present invention.
Embodiment 1
As shown in Figs 1-4, a kind of high-power PIN diode core assembly encapsulating structure, including box body 1, cover board 2 and PIN bis- Pole pipe core 3, the box body 1 are 6 line aluminium alloy materials, and cover board 2 is 4 line aluminium alloy materials, are equipped with package cavity 4 in the box body 1, 4 top opening of package cavity, 4 bottom of package cavity are equipped with substrate mounting groove 5, are provided with substrate 6 in substrate mounting groove 5, on the substrate 6 Two groups of PIN diode cores 3 are installed, are set on the outer wall of box body 1 there are three insulator mounting groove 7, each insulator mounting groove 7 Middle position be equipped with insulator mounting hole 8, insulator mounting hole 8 is connected to outside package cavity 4 and box body 1, is pacified in insulator Dress is equipped with insulator 9 in hole 8, and the inner conductor of insulator 9 is located in package cavity 4, and the outer conductor of insulator 9 is located at outside box body 1, The inner conductor of two of them insulator 9 is connect with the anode of PIN diode core 3 respectively, after two groups of 3 common cathodes of PIN diode core It is connect with the inner conductor of third insulator 9, scolding tin seals between insulator 9 and insulator mounting groove 7, is located at 4 chamber of package cavity The box body 1 at mouth end is equipped with slot cover 11, and the surface of slot cover 11 and trough rim 12 are equipped with true qualities conductive oxide layer, 2 laser of cover board It is welded in slot cover 11 and forms closed structure with box body 1.
It is bonded by spun gold 10 between the anode of the PIN diode core 3, cathode and the inner conductor of insulator 9;PIN Spun gold 10 between the anode of diode core 3 and the inner conductor of insulator 9 is bonded quantity and is at least 2,3 common cathode of PIN diode core Spun gold 10 between pole and the inner conductor of insulator 9 is bonded quantity and is at least 3;The anode of PIN diode core 3, cathode and with Spun gold 10,9 inner conductor of insulator and the box body 1 that anode, the cathode of PIN diode core 3 are connected are remained above equal to 0.6mm Interval;The substrate 6 is aluminum oxide base material, and thickness is more than or equal to 0.6mm;The width and trough rim 12 of the slot cover 11 Width is all larger than equal to 0.5mm;The insulator 9 is glass insulator, and inner conductor and 6 top surface of substrate are tangent.
When it is implemented, the processing of true qualities electric conductive oxidation is made on slot cover 11 and 12 surface of trough rim, in order to by 2 Laser Welding of cover board It connects in slot cover 11, so that cover board 2 is closed by package cavity 4 with box body 1, improves its air-tightness;The anode of PIN diode core 3, Cathode and the spun gold 10 being connected with the electrode of PIN diode core 3,9 inner conductor of insulator are remained above with box body 1 and are equal to The interval of 0.6mm can guarantee in package cavity 4 under dielectric constant of air, high potential equipotentiality body and low potential equipotentiality body it Between at least interval of 0.6mm, such interval can make after encapsulation between the anode and cathode of PIN diode core 3 in normal pressure With the electric field strength for being resistant to 1KV or more under environment under low pressure, and highest can tolerate 2KV under the air pressure environment of 1KPa~0.1MPa Electric field strength;Anode, the cathode of PIN diode core 3 are bonded that quantity is as above arranged with the spun gold 10 between 9 inner conductor of insulator can also The interelectrode compressive resistance of PIN diode core 3 is improved to a certain extent.
Embodiment 2
The specification of the insulator mounting groove 7 isDepth 0.3mm~0.4mm counterbore;The rule of insulator mounting hole 8 Lattice areThrough-hole;The specification of slot cover 11 and trough rim 12 is 0.5mm ﹢ 0.1mm/0.0mm;The cavity depth of package cavity 4 is 6.9mm ﹢ 0.1mm/-0.0mm;The outer dimension of box body be (16.3 ﹢ 0.0mm/-0.1mm) × (17.0 ﹢ 0.0mm/-0.1mm) × (9.5±0.05mm);Reality between cover board 2 and box body 1 matches gap≤0.06mm;Substrate 6 with a thickness of 0.6mm ± 0.05mm, Its 3 mounting surface of PIN diode core and the equal Gold plated Layer of 1 mounting surface of box body, 3 mounting surface layer gold thickness >=3 μm of PIN diode core, with Box body mounting surface layer gold thickness >=1 μm.
Above-described specific embodiment, to the purpose of this utility model, technical scheme and beneficial effects carried out into One step is described in detail, it should be understood that being not used to limit the foregoing is merely specific embodiment of the present utility model Determine the protection scope of the utility model, within the spirit and principle of the utility model, any modification for being made equally is replaced It changes, improve, should be included within the scope of protection of this utility model.

Claims (8)

1. a kind of high-power PIN diode core assembly encapsulating structure, including box body (1), cover board (2) and PIN diode core (3), The box body (1) is 6 line aluminium alloy materials, and cover board (2) is 4 line aluminium alloy materials, which is characterized in that is set in the box body (1) Have package cavity (4), package cavity (4) top opening, package cavity (4) bottom is equipped with substrate mounting groove (5), in substrate mounting groove (5) Be provided with substrate (6), two groups of PIN diode cores (3) be installed on substrate (6), set on the outer wall of box body (1) there are three absolutely The middle position of edge mounting groove (7), each insulator mounting groove (7) is equipped with insulator mounting hole (8), insulator mounting hole (8) connection package cavity (4) and box body (1) are external, are equipped with insulator (9) in insulator mounting hole (8), insulator (9) Inner conductor is located in package cavity (4), and the outer conductor of insulator (9) is located at box body (1) outside, leads in two of them insulator (9) Body is connect with the anode of PIN diode core (3) respectively, after two groups of PIN diode core (3) common cathodes with third insulator (9) Inner conductor connection, between insulator (9) and insulator mounting groove (7) scolding tin seal, positioned at package cavity (4) accent end box body (1) slot cover (11) are equipped with, the surface of slot cover (11) and trough rim (12) are equipped with true qualities conductive oxide layer, cover board (2) laser It is welded in slot cover (11) and forms closed structure with box body (1).
2. a kind of high-power PIN diode core assembly encapsulating structure according to claim 1, which is characterized in that the PIN It is bonded by spun gold (10) between the anode of diode core (3), cathode and the inner conductor of insulator (9).
3. a kind of high-power PIN diode core assembly encapsulating structure according to claim 1 or 2, which is characterized in that described The anode of PIN diode core (3), cathode and the spun gold (10) being connected with the electrode of PIN diode core (3), insulator (9) Inner conductor is remained above the interval equal to 0.6mm with box body (1).
4. a kind of high-power PIN diode core assembly encapsulating structure according to claim 1, which is characterized in that the base Piece (6) is aluminum oxide base material, and thickness is more than or equal to 0.6mm.
5. a kind of high-power PIN diode core assembly encapsulating structure according to claim 1, which is characterized in that the lid The width and trough rim (12) width of board slot (11) are all larger than equal to 0.5mm.
6. a kind of high-power PIN diode core assembly encapsulating structure according to claim 1, which is characterized in that the PIN Spun gold (10) between the anode of diode core (3) and the inner conductor of insulator (9) is bonded quantity and is at least 2, PIN diode core (3) spun gold (10) between common cathode and the inner conductor of insulator (9) is bonded quantity and is at least 3.
7. a kind of high-power PIN diode core assembly encapsulating structure according to claim 1, which is characterized in that described exhausted The inner conductor of edge (9) and substrate (6) top surface are tangent.
8. a kind of high-power PIN diode core assembly encapsulating structure according to claim 1, which is characterized in that described exhausted Edge (9) is glass insulator.
CN201821005197.8U 2018-06-27 2018-06-27 A kind of high-power PIN diode core assembly encapsulating structure Active CN208256643U (en)

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Application Number Priority Date Filing Date Title
CN201821005197.8U CN208256643U (en) 2018-06-27 2018-06-27 A kind of high-power PIN diode core assembly encapsulating structure

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110286313A (en) * 2019-06-17 2019-09-27 西安微电子技术研究所 A kind of potted circuit module intermittence sealing Failure Analysis method under hot environment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110286313A (en) * 2019-06-17 2019-09-27 西安微电子技术研究所 A kind of potted circuit module intermittence sealing Failure Analysis method under hot environment

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