CN208205828U - High-temperature resistant and energy-saving silicon carbide deck - Google Patents
High-temperature resistant and energy-saving silicon carbide deck Download PDFInfo
- Publication number
- CN208205828U CN208205828U CN201820708266.5U CN201820708266U CN208205828U CN 208205828 U CN208205828 U CN 208205828U CN 201820708266 U CN201820708266 U CN 201820708266U CN 208205828 U CN208205828 U CN 208205828U
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- China
- Prior art keywords
- rectangular substrate
- silicon carbide
- support base
- temperature resistant
- energy
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- Expired - Fee Related
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Abstract
The utility model relates to a kind of high-temperature resistant and energy-saving silicon carbide decks, it includes rectangular substrate, gas distribution channel is equipped on the rectangular substrate front, dilatation joint is equipped on the rectangular substrate side, the position of dilatation joint on opposite two sides is mutually staggered, groove is designed in the middle of the rectangular substrate each edge, the gas distribution channel includes upper big elliptical openings small elliptical openings under, they interconnect setting, support base is equipped in the rectangular substrate bottom, the thickness of the support base is not less than the thickness of rectangular substrate, the support base is located at the width direction of rectangular substrate.The utility model cloth heat uniformly, effectively improves product quality.
Description
Technical field
The utility model relates to a kind of plates, and in particular to a kind of silicon carbide plate.
Background technique
Refractory slab is as a kind of important auxiliary material in the dedicated kiln furnitures of support product, and shape is mainly lamellar, area
It is larger, and thickness is relatively small, in use process directly and flame contact, material need good thermal shock, high-temperature behavior excellent
Good composite material, wherein silicon carbide deck is representative one of refractory shed plate.Existing silicon carbide deck is mostly
Surface plate, part kind have the equidistantly reinforcing lines that is distributed in length and breadth in plate face production, and this silicon carbide deck is in high temperature resistant, thermally conductive
Property aspect it is with good performance, but there is also the even phenomenon of porcelain billet uneven heating.
Summary of the invention
Goal of the invention: the purpose of this utility model is to overcome deficiency in the prior art, providing a kind of cloth heat uniformly,
Effectively improve the high-temperature resistant and energy-saving silicon carbide deck of product quality.
Technical solution: in order to solve the above-mentioned technical problem, high-temperature resistant and energy-saving silicon carbide deck described in the utility model,
It includes rectangular substrate, and gas distribution channel is equipped on the rectangular substrate front, and expansion is equipped on the rectangular substrate side
It stitches, the position of the dilatation joint on opposite two sides is mutually staggered, and is designed in the middle of the rectangular substrate each edge recessed
Slot, the gas distribution channel include upper big elliptical openings small elliptical openings under, they interconnect setting, in the rectangle
Base plate bottom is equipped with support base, and the thickness of the support base is not less than the thickness of rectangular substrate, and the support base is located at rectangle base
The width direction of plate.
The length direction of the upper big elliptical openings in the gas distribution channel is located at the length direction of rectangular substrate.
Several gas distribution channels are equipped in the rectangular substrate.
The rectangular substrate and support base are integrally formed.
The groove is rectangle.
The utility model has the advantages that the utility model is compared with prior art, remarkable advantage is: the setting of the utility model overall structure
Rationally, gas distribution channel is set in rectangular substrate, and gas distribution channel includes upper big elliptical openings small elliptical openings under,
They are interconnected, which can be such that heat spreads from the bottom up to surrounding, to make to be heated evenly, improve product quality, if
Groove is set, so that heat is further uniformly distributed, to improve the qualification rate of product, the setting of support base can make product in kiln
There are more selections when arranging in furnace, product can also be made to increase the circulation of air in sintering procedure, in rectangular substrate side
Dilatation joint is set, can effectively offset and expand with heat and contract with cold.
Detailed description of the invention
Fig. 1 is the planar structure schematic diagram of the utility model；
Fig. 2 is cross-sectional view in the middle part of the side of the utility model.
Specific embodiment
The utility model is further described with reference to the accompanying drawings and examples.
As depicted in figs. 1 and 2, high-temperature resistant and energy-saving silicon carbide deck described in the utility model, it includes rectangular substrate
1, it is equipped with gas distribution channel 2 on 1 front of rectangular substrate, dilatation joint 3 is equipped on 1 side of rectangular substrate, it is opposite
The position of dilatation joint 3 on two sides is mutually staggered, and is designed with groove 4 in the middle of 1 each edge of rectangular substrate, described
Gas distribution channel 2 includes upper big elliptical openings 5 small elliptical openings 6 under, they interconnect setting, in the rectangular substrate
1 bottom is equipped with support base 7, and the thickness of the support base 7 is not less than the thickness of rectangular substrate 1, and the support base 7 is located at rectangle base
The width direction of plate 1；The length direction of the upper big elliptical openings 5 in the gas distribution channel 2 is located at the length side of rectangular substrate 1
To；Several gas distribution channels 2 are equipped in the rectangular substrate 1；The rectangular substrate 1 and support base 7 are integrally formed；The groove
4 be rectangle.Rationally, gas distribution channel is arranged, and gas distribution channel includes in the setting of the utility model overall structure in rectangular substrate
Upper big elliptical openings small elliptical openings under, they are interconnected, which can be such that heat spreads from the bottom up to surrounding,
To make to be heated evenly, product quality is improved, groove is set, so that heat is further uniformly distributed, to improve the conjunction of product
The setting of lattice rate, support base can make product have more selections when arranging in kiln, product can also be made in sintering procedure
The middle circulation for increasing air is arranged dilatation joint in rectangular substrate side, can effectively offset and expand with heat and contract with cold.
The utility model provides a kind of thinking and method, and there are many method and the approach for implementing the technical solution, with
It is only preferred embodiments of the present invention described in upper, it is noted that for those skilled in the art,
Without departing from the principle of this utility model, several improvements and modifications can also be made, these improvements and modifications should also regard
For the protection scope of the utility model, all undefined components in this embodiment can be implemented in the prior art.
Claims (5)
1. high-temperature resistant and energy-saving silicon carbide deck, it is characterised in that: it includes rectangular substrate (1), the rectangular substrate (1) just
Face is equipped with gas distribution channel (2), is equipped with dilatation joint (3) on the rectangular substrate (1) side, the expansion on opposite two sides
The position of seam (3) is mutually staggered, and is designed with groove (4) in the middle of the rectangular substrate (1) each edge, the gas distribution channel
(2) include upper big elliptical openings (5) and under small elliptical openings (6), they interconnect setting, in the rectangular substrate
(1) bottom is equipped with support base (7), and the thickness of the support base (7) is not less than the thickness of rectangular substrate (1), the support base (7)
It is located at the width direction of rectangular substrate (1).
2. high-temperature resistant and energy-saving silicon carbide deck according to claim 1, it is characterised in that: the gas distribution channel (2)
The length direction of upper big elliptical openings (5) is located at the length direction of rectangular substrate (1).
3. high-temperature resistant and energy-saving silicon carbide deck according to claim 1, it is characterised in that: in the rectangular substrate (1)
It is equipped with several gas distribution channels (2).
4. high-temperature resistant and energy-saving silicon carbide deck according to claim 1, it is characterised in that: the rectangular substrate (1) and
Support base (7) is integrally formed.
5. high-temperature resistant and energy-saving silicon carbide deck according to claim 1, it is characterised in that: the groove (4) is rectangle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820708266.5U CN208205828U (en) | 2018-05-14 | 2018-05-14 | High-temperature resistant and energy-saving silicon carbide deck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820708266.5U CN208205828U (en) | 2018-05-14 | 2018-05-14 | High-temperature resistant and energy-saving silicon carbide deck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208205828U true CN208205828U (en) | 2018-12-07 |
Family
ID=64519796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820708266.5U Expired - Fee Related CN208205828U (en) | 2018-05-14 | 2018-05-14 | High-temperature resistant and energy-saving silicon carbide deck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208205828U (en) |
-
2018
- 2018-05-14 CN CN201820708266.5U patent/CN208205828U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181207 Termination date: 20190514 |