CN208125883U - A kind of high-power chip test device - Google Patents
A kind of high-power chip test device Download PDFInfo
- Publication number
- CN208125883U CN208125883U CN201820665174.3U CN201820665174U CN208125883U CN 208125883 U CN208125883 U CN 208125883U CN 201820665174 U CN201820665174 U CN 201820665174U CN 208125883 U CN208125883 U CN 208125883U
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- chip
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- probe
- contact surface
- test device
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- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The utility model discloses a kind of high-power chip test devices, including a ground connection radiator, by support cavity（1）, peripheral circuit plate（3）It is formed with socket；Support cavity（1）Upper surface is provided with the contact surface of chip to be measured（2）, peripheral circuit plate is set on upper surface（3）, peripheral circuit plate（3）Upper connecting sleeve connects word, and through-hole is arranged in middle part, and via regions correspond to the contact surface of chip to be measured（2）, socket includes the chip testing pedestal of openable and closable upper cover and bottom（4）, chip testing pedestal（4）Contact surface hollow and with chip to be measured（2）It is corresponding, the contact surface of chip to be measured（2）The upper multiple elastic probes of setting（5）.The utility model can effectively improve contact area, increase heat dissipation effect, reduce pressure to protect device, while guarantee reliable radio frequency ground connection.
Description
Technical field
The utility model relates to microwave-radio technology field more particularly to High-power amplifier device detection technologies, specially
A kind of high-power chip test device.
Background technique
In the measuring technology of high-power chip, traditional approach by contact plane precision process, smear thermal grease conduction and add
The means such as big pressure guarantee the reliability and heat dissipation of electrical contact.And radio-frequency devices device must simultaneously meet electrically conductive and grounded equal
It could be worked normally in the state of good.
Pyrotoxin face and heating surface are since machining accuracy is not in place and surface roughness in traditional heat conducting and radiating mode
Presence, to will cause have a large amount of gap between two faces, therefore by intensified pressure and to improve roughness and reduce heat
The shortcomings that resistance, this mode is that some RF Components compression capability are limited, is easily damaged.If smearing thermal grease conduction influences to penetrate again
Frequency is grounded.
And be the wing formula High-power amplifier device detection of butterfly for shape, traditional approach passes through the crimping to the butterfly wing
It is connected with peripheral circuit, on the one hand needs very big pressure, be on the other hand also easy to damage device.
Utility model content
The purpose of this utility model is to provide a kind of high-power chip test devices, can effectively improve contact surface
Product increases heat dissipation effect, reduces pressure to protect device, while guaranteeing reliable radio frequency ground connection.The purpose of this utility model
It is achieved through the following technical solutions：
A kind of high-power chip test device, including a ground connection radiator, the ground connection radiator is by support chamber
Body, peripheral circuit plate and socket（SOCKET）Composition；Power supply interface is arranged in the support cavity lower part, supports cavity upper surface
Middle part is provided with the contact surface of chip to be measured, supports and peripheral circuit plate is arranged on cavity upper surface, the connection of peripheral circuit plate top
Through-hole is arranged in socket, peripheral circuit plate middle part, and via regions correspond to the contact surface of the chip to be measured, and socket includes that can open
The upper cover of conjunction and the chip testing pedestal of bottom, chip testing pedestal is hollow and corresponding with the contact surface of the chip to be measured, institute
It states and multiple elastic probes is set on the contact surface of chip to be measured.
Further, multiple drillings are arranged in the contact surface of chip to be measured, elastic probe by drilling insertion, and with drilled
It is full of cooperation.
Further, the bore diameter is 0.5 ~ 1.0mm, and drilling depth is 15 ~ 20mm, the spacing between drilling is 2 ~
4mm。
Further, the contact surface of the chip to be measured includes two corresponding wing regions of central region and two sides 4,
Central region and wing region are provided with elastic probe, and the elastic probe of central region setting is grounded probe, wing region
The elastic probe of setting is rf probe.
Further, the grounded probe is uniformly distributed in central region, and rf probe is uniformly distributed in wing region, is connect
Spacing between ground probe is greater than the spacing between rf probe.
Further, the elastic probe material is alloyed copper.
Further, the elastic probe material is phosphor bronze.
Further, the contact surface self-supporting cavity upper surface protrusion of chip to be measured, elastic probe protrude from chip to be measured
Contact surface.
The beneficial effects of the utility model：
Test specimen to be measured is placed in a socket（SOCKET）Device in, input/output interface（The butterfly wing）With periphery electricity
The connection on road is not pushed from top and circuit connection, and built-in elastic probe is connected with circuit in SOCKET, simultaneously
The matching on circuit is carried out, can guarantee reliable connection without applying great pressure i.e. using the characteristic of elastic probe, thus
It plays not damaged（Or low damage）Purpose.
The utility model densely covered elastic probe, formation on chip contact surface to be measured form seamless with chip contact surface to be measured
Contact effectively improve contact area partially instead of the effect of thermal grease conduction, increase heat dissipation effect, reduce pressure to
Device is protected, while ensure that reliable radio frequency ground connection.
With reference to the accompanying drawing and specific embodiment is described in further detail the utility model.
Detailed description of the invention
Fig. 1 is ground connection radiator top view；
Fig. 2 is that chip to be measured is arranged in the overall structure diagram tested on ground connection radiator；
Fig. 3 is probe insert structure schematic diagram；
Fig. 4 is that chip to be measured and probe contact schematic diagram；
Fig. 5 is the part of Fig. 4（The portion A）Enlarged drawing；
Fig. 6 is the contact surface enlarged structure schematic diagram of chip to be measured.
Specific embodiment
Embodiment 1
As shown in figures 1 to 6, a kind of high-power chip test device, including a ground connection radiator, the ground connection heat dissipation
Device is by support cavity 1, peripheral circuit plate 3 and socket（SOCKET）Composition；Power supply interface is arranged in 1 lower part of support cavity
7, support 1 upper surface middle part of cavity is provided with the contact surface 2 of chip to be measured, supports and peripheral circuit plate is arranged on 1 upper surface of cavity
3,3 upper connecting sleeve of peripheral circuit plate connects word, and through-hole is arranged in the middle part of peripheral circuit plate 3, and via regions correspond to the chip to be measured
Contact surface 2, socket includes the chip testing pedestal 4 of openable and closable upper cover and bottom, chip testing pedestal 4 it is hollow and with institute
The contact surface 2 for stating chip to be measured is corresponding, and multiple elastic probes 5 are arranged on the contact surface 2 of the chip to be measured.
Multiple drillings are arranged in the contact surface 2 of chip to be measured, and elastic probe 5 is interference fitted by drilling insertion, and with drilling.
The bore diameter is 0.5 ~ 1.0mm, and drilling depth is 15 ~ 20mm, and the spacing between drilling is 2 ~ 4mm.The chip to be measured
Contact surface 2 include central region 2-1 and two sides 4 two corresponding wing region 2-2, central region 2-1 and wing region
2-2 is provided with elastic probe 5, and the elastic probe of central region 2-1 setting is grounded probe 5-1, wing region 2-2 setting
Elastic probe is rf probe 5-2.The grounded probe 5-1 is uniformly distributed in central region 2-1, and rf probe 5-2 is in wing
Region 2-2 is uniformly distributed, and the spacing between grounded probe 5-1 is greater than the spacing between rf probe 5-2.
5 material of elastic probe is alloyed copper, preferably phosphor bronze.
2 self-supporting cavity of contact surface, 1 upper surface of chip to be measured is protruded, and elastic probe 5 protrudes from the contact of chip to be measured
Face 2.
When test, chip 6 to be measured is placed on the contact surface 2 of chip to be measured by the upper cover for opening socket, chip 6 to be measured
Bottom contacted with elastic probe 5, cover the upper cover of socket, energization starts to test.6 shape of chip to be measured is the butterfly wing
Form High-power amplifier device.
Claims (8)
1. a kind of high-power chip test device, it is characterised in that：Including a ground connection radiator, the ground connection radiator
By support cavity（1）, peripheral circuit plate（3）It is formed with socket；The support cavity（1）Power supply interface is arranged in lower part（7）, branch
Support cavity（1）Upper surface middle part is provided with the contact surface of chip to be measured（2）, support cavity（1）Peripheral circuit is set on upper surface
Plate（3）, peripheral circuit plate（3）Upper connecting sleeve connects word, peripheral circuit plate（3）Through-hole is arranged in middle part, described in via regions are corresponding
The contact surface of chip to be measured（2）, socket includes the chip testing pedestal of openable and closable upper cover and bottom（4）, chip testing bottom
Seat（4）Contact surface hollow and with the chip to be measured（2）It is corresponding, the contact surface of the chip to be measured（2）The upper multiple bullets of setting
Property probe（5）.
2. high-power chip test device according to claim 1, it is characterised in that：The contact surface of chip to be measured（2）If
Set multiple drillings, elastic probe（5）It is inserted by drilling, and is interference fitted with drilling.
3. high-power chip test device according to claim 2, it is characterised in that：The bore diameter be 0.5 ~
1.0mm, drilling depth are 15 ~ 20mm, and the spacing between drilling is 2 ~ 4mm.
4. high-power chip test device according to claim 1, it is characterised in that：The contact surface of the chip to be measured
（2）Including central region（2-1）With the two corresponding wing regions in two sides 4（2-2）, central region（2-1）With wing region
（2-2）It is provided with elastic probe（5）, central region（2-1）The elastic probe of setting is grounded probe（5-1）, wing region
（2-2）The elastic probe of setting is rf probe（5-2）.
5. high-power chip test device according to claim 4, it is characterised in that：The grounded probe（5-1）In
Portion region（2-1）It is uniformly distributed, rf probe（5-2）In wing region（2-2）It is uniformly distributed, grounded probe（5-1）Between
Spacing is greater than rf probe（5-2）Between spacing.
6. high-power chip test device according to claim 1, it is characterised in that：The elastic probe（5）Material is
Alloyed copper.
7. high-power chip test device according to claim 6, it is characterised in that：The elastic probe（5）Material is
Phosphor bronze.
8. high-power chip test device according to claim 1, it is characterised in that：The contact surface of chip to be measured（2）From
Support cavity（1）Upper surface protrusion, elastic probe（5）Protrude from the contact surface of chip to be measured（2）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820665174.3U CN208125883U (en) | 2018-05-07 | 2018-05-07 | A kind of high-power chip test device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820665174.3U CN208125883U (en) | 2018-05-07 | 2018-05-07 | A kind of high-power chip test device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208125883U true CN208125883U (en) | 2018-11-20 |
Family
ID=64185106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820665174.3U Active CN208125883U (en) | 2018-05-07 | 2018-05-07 | A kind of high-power chip test device |
Country Status (1)
| Country | Link |
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| CN (1) | CN208125883U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108802596A (en) * | 2018-05-07 | 2018-11-13 | 北京中微普业科技有限公司 | A kind of high-power chip test device and its test method |
| CN113109610A (en) * | 2021-04-06 | 2021-07-13 | 北京中微普业科技有限公司 | RF bare chip flat probe test tool |
-
2018
- 2018-05-07 CN CN201820665174.3U patent/CN208125883U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108802596A (en) * | 2018-05-07 | 2018-11-13 | 北京中微普业科技有限公司 | A kind of high-power chip test device and its test method |
| CN113109610A (en) * | 2021-04-06 | 2021-07-13 | 北京中微普业科技有限公司 | RF bare chip flat probe test tool |
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