CN207966925U - A kind of cleaning device of semiconductor devices - Google Patents
A kind of cleaning device of semiconductor devices Download PDFInfo
- Publication number
- CN207966925U CN207966925U CN201820493213.6U CN201820493213U CN207966925U CN 207966925 U CN207966925 U CN 207966925U CN 201820493213 U CN201820493213 U CN 201820493213U CN 207966925 U CN207966925 U CN 207966925U
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- China
- Prior art keywords
- inside groove
- groove
- cleaning
- discharge outlet
- semiconductor devices
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- 238000004140 cleaning Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 238000002604 ultrasonography Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 4
- 239000010935 stainless steel Substances 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 abstract description 10
- 238000009434 installation Methods 0.000 abstract description 2
- 238000005498 polishing Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model discloses a kind of cleaning devices of semiconductor devices, including inside groove 4 and overflow outer groove 5, the upper end edge for the overflow outer groove 5 being connected with inside groove 4 is higher than the upper end edge of inside groove 4,4 lower part of inside groove is provided with mesh support plate 3, end edge is in wavy on inside groove 4,4 bottom end of inside groove is provided with the water inlet 2 being connected to inside groove 4, and discharge outlet 6 is provided on overflow outer groove 5, and discharge outlet 6 is provided with the instrument for detecting discharge outlet liquid water resistance rate parameter；The material of inside groove 4 and overflow outer groove 5 is 316L polishing stainless steel plates, the bottom end of inside groove 4 is provided at least one ultrasonic wave/mega sonic wave vibration plate 1, ultrasound/million are uniformly distributed sound and vibrations of several ultrasounds/million, according to element size technological requirement to be cleaned, selection installation double frequency or multifrequency oscillator on sound and vibration plate 1；The utility model has the tiny degree of particle for improving semiconductor cleaning, further increases the efficiency of cleaning, is easy to detect cleaning performance, greatly improves the yield rate of the cleaning step.
Description
Technical field
The utility model belongs to the cleaning device of Semiconductor Cleaning Technology field more particularly to semiconductor devices.
Background technology
Semiconductor devices cleaning is an important processing step of electronic industry, all can be by the process of many devices
Impurity in environment is polluted, therefore generally is required to clean device after each technique.With electronic device
The feature of miniaturization and high integration, semiconductor devices allow the quantity of remaining impurity particle and diameter smaller and smaller, this
It results in very small particle and also becomes manufacture and performance enough to influence semiconductor devices.For these small particles,
Traditional fluid cleaning method can not effectively remove them.This is because in semi-conductor silicon chip surface and cleaning solution
There is an opposing stationary boundary layers between body.When the particle diameter for being attached to silicon chip surface is less than boundary layer thickness,
The flowing of cleaning liquid can not just act particle.In order to improve this problem, ultrasonic wave and mega sonic wave have been introduced into half
Conductor cleaning.Ultrasonic energy can generate small bubble in water, when bubble pops generated vibrations will have
Help remove those molecules being attached on silicon chip, to clean silicon chip.
But the existing semicoductor device washing apparatus for being equipped with ultrasonic wave or mega sonic wave, in a cleaning process,
Though contaminant particle is separately from the semiconductor device, the pollutant being suspended in cleaning solution can also adhere to semiconductor table again
Face causes cleaning performance poor to lead to the problem of secondary pollution, can only be repeated as many times and clean, substantially reduce working efficiency, if
It is needed in short time in the case of cleaning a large amount of semiconductor devices, can there is a situation where that cleaning is endless；To detect semiconductor simultaneously
Whether body reaches cleaning index, needs to be detected it after a cleaning process, entirely cleans and detected
Journey is more time-consuming.
In view of this, special propose the utility model.
Utility model content
For problems of the prior art, the purpose of this utility model is to provide a kind of cleaning dress of semiconductor devices
It sets, improves the tiny degree of particle of semiconductor cleaning, further increase the efficiency of cleaning, be easy to detect cleaning performance, carry significantly
The yield rate of the high cleaning step.
To achieve the goals above, the cleaning device of a kind of semiconductor devices provided by the utility model, including inside groove and
Overflow outer groove, the upper end edge of the overflow outer groove being connected with inside groove are higher than the upper end edge of inside groove, the inside groove lower part setting
Have a mesh support plate, the bottom end of the inside groove is provided with the sound and vibration plate of at least one ultrasound/million, the inside groove bottom end be provided with it is interior
The water inlet of slot connection, is provided with discharge outlet on the overflow outer groove；
Preferably, the discharge outlet is provided with the instrument conductance for detecting discharge outlet liquid water resistance rate parameter conductivity and passes
Sensor and transmitter；
Preferably, end edge is in wavy on the inside groove；
Preferably, uniformly distributed several oscillators on the vibration plate；
Preferably, the material of the inside groove and outer groove is stainless steel plate.
It is provided by the utility model, it has the advantages that：
1. overflow outer groove is arranged, the pollutant being suspended in liquid can be discharged with flow from the discharge outlet of overflow outer groove, have
Effect avoids the phenomenon that semiconductor is secondary polluted, and substantially increases cleaning efficiency, and examine by the way that instrument is arranged in discharge outlet
Survey whether parameters, the cleanings for detecting device such as the water resistance rate of discharge outlet liquid meet index request, further increase the effect of cleaning
Rate is easy to detect cleaning performance, significantly improves the yield rate of the cleaning step.
2. the bottom end of inside groove is provided at least one ultrasound/million sound and vibration plate, can be wanted according to element size technique to be cleaned
It asks, double frequency or multifrequency oscillator can be installed, to reach the tiny degree of particle and more preferably cleaning performance that improve semiconductor cleaning.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of the cleaning device of semiconductor devices provided by the utility model.
Fig. 2 is the A-A sectional views of Fig. 1.
In figure：
1. 5. overflow outer groove of vibration plate 2. water inlet, 3. mesh support plate, 4. inside groove, 6. discharge outlet
Specific implementation mode
The utility model is described further with reference to specific embodiments and the drawings, to help the utility model is understood
Content.
As shown in Figs. 1-2, be a kind of cleaning device of semiconductor devices provided by the utility model, including inside groove 4 and overflow
Outer groove 5 is flowed, the upper end edge for the overflow outer groove 5 being connected with inside groove 4 is higher than the upper end edge of inside groove 4, and 4 lower part of inside groove is provided with mesh
Support plate 3, for end edge in wavy, 4 bottom end of inside groove is provided with the water inlet 2 being connected to inside groove 4, is set on overflow outer groove 5 on inside groove 4
It is equipped with discharge outlet 6, instrument conductivity sensor and change of the setting of discharge outlet 6 for detecting discharge outlet liquid water resistance rate parameter conductivity
Send device.The material of inside groove 4 and overflow outer groove 5 is 316L polishing stainless steel plates, and shape can be cube or cylinder, the bottom of inside groove 4
End is provided at least one ultrasonic wave/mega sonic wave vibration plate 1, and sound and vibrations of several ultrasounds/million is uniformly distributed on the sound and vibration plate 1 of ultrasound/million,
The frequency of ultrasonic vibrator is 40kHz~200kHz, and the power of ultrasonic vibrator is about 500W or so, and the frequency of million sound and vibrations is more than 1
The power of million Hz, million sound and vibrations are about 500W or so, according to element size technological requirement to be cleaned, selection installation double frequency oscillator
(such as 40Khz/80kHZ), to reach more preferably cleaning performance.
The course of work of the utility model is as follows：Semiconductor devices is placed in mesh support plate 3, it is inside from water inlet 2
1 water filling of slot so that semiconductor devices is flooded completely by liquid, and the liquid higher than inside groove 4 can overflow in overflow outer groove 5, and lead to
Cross discharge outlet 6 discharge, be powered open ultrasound/million sound and vibration plate 1 can make semiconductor devices under the action of ultrasound/million sound and vibration
Pollution attachment liquid collision cleaning under be separately from the semiconductor device, due to the flow in inside groove 4 be it is dynamic,
Contaminant particle can be discharged to overflow outer groove 5 with flow and is discharged from discharge outlet 6, and discharge outlet is detected by the way that instrument is arranged in discharge outlet 6
The parameters such as the water resistance rate of liquid, so that it may to learn whether the cleaning of device meets index request.
Specific case used herein elaborates utility model design, and the explanation of above example is
It is used to help understand the core concept of the utility model.It should be pointed out that for those skilled in the art,
Under the premise of not departing from utility model design, any obvious modification, equivalent replacement or the other improvements made should all
It is included within the scope of protection of this utility model.
Claims (5)
1. a kind of cleaning device of semiconductor devices, which is characterized in that described to be connected with inside groove including inside groove and overflow outer groove
Overflow outer groove upper end edge be higher than inside groove upper end edge, the inside groove lower part is provided with mesh support plate, the bottom of the inside groove
End is provided at least one ultrasound/million sound and vibration plate, and the inside groove bottom end is provided with the water inlet being connected to inside groove, outside the overflow
Discharge outlet is provided on slot.
2. a kind of cleaning device of semiconductor devices according to claim 1, which is characterized in that the discharge outlet is provided with
Instrument conductivity sensor and transmitter for detecting discharge outlet liquid water resistance rate parameter conductivity.
3. a kind of cleaning device of semiconductor devices according to claim 1, which is characterized in that end edge is on the inside groove
It is wavy.
4. a kind of cleaning device of semiconductor devices according to claim 1, which is characterized in that if uniformly distributed on the vibration plate
Dry oscillator.
5. a kind of cleaning device of semiconductor devices according to claim 1, which is characterized in that the inside groove and outer groove
Material is stainless steel plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820493213.6U CN207966925U (en) | 2018-03-30 | 2018-03-30 | A kind of cleaning device of semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820493213.6U CN207966925U (en) | 2018-03-30 | 2018-03-30 | A kind of cleaning device of semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207966925U true CN207966925U (en) | 2018-10-12 |
Family
ID=63727296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820493213.6U Active CN207966925U (en) | 2018-03-30 | 2018-03-30 | A kind of cleaning device of semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207966925U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110137116A (en) * | 2019-06-03 | 2019-08-16 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Rinse bath |
| CN113751409A (en) * | 2020-07-27 | 2021-12-07 | 英迪那米(徐州)半导体科技有限公司 | A device and method for cleaning semiconductor components |
| CN114289405A (en) * | 2022-01-10 | 2022-04-08 | 南通康芯半导体科技有限公司 | Semiconductor wafer overflow ultrasonic cleaning device |
| CN117711991A (en) * | 2024-02-05 | 2024-03-15 | 苏州智程半导体科技股份有限公司 | Wafer groove type cleaning equipment |
-
2018
- 2018-03-30 CN CN201820493213.6U patent/CN207966925U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110137116A (en) * | 2019-06-03 | 2019-08-16 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Rinse bath |
| CN113751409A (en) * | 2020-07-27 | 2021-12-07 | 英迪那米(徐州)半导体科技有限公司 | A device and method for cleaning semiconductor components |
| CN114289405A (en) * | 2022-01-10 | 2022-04-08 | 南通康芯半导体科技有限公司 | Semiconductor wafer overflow ultrasonic cleaning device |
| CN117711991A (en) * | 2024-02-05 | 2024-03-15 | 苏州智程半导体科技股份有限公司 | Wafer groove type cleaning equipment |
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