CN207660239U - A kind of silicon wafer heating floor total system - Google Patents

A kind of silicon wafer heating floor total system Download PDF

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Publication number
CN207660239U
CN207660239U CN201721102612.7U CN201721102612U CN207660239U CN 207660239 U CN207660239 U CN 207660239U CN 201721102612 U CN201721102612 U CN 201721102612U CN 207660239 U CN207660239 U CN 207660239U
Authority
CN
China
Prior art keywords
layer
silicon wafer
arc
main board
decorative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201721102612.7U
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Chinese (zh)
Inventor
王超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HUNAN DEARSUN THERMOELECTRICITY Co Ltd
Original Assignee
HUNAN DEARSUN THERMOELECTRICITY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HUNAN DEARSUN THERMOELECTRICITY Co Ltd filed Critical HUNAN DEARSUN THERMOELECTRICITY Co Ltd
Priority to CN201721102612.7U priority Critical patent/CN207660239U/en
Application granted granted Critical
Publication of CN207660239U publication Critical patent/CN207660239U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The utility model discloses a kind of silicon wafer heating floor total systems, it is followed successively by thermal insulation board layer from the bottom to top, balance layer and silicon wafer heating layer, splicing is equipped in several pieces of decorative layers and decorative layer and is equipped with wearing layer on the silicon wafer heating layer, the silicon wafer heater layer includes upper, it lower base material and is uniformly coated on, silicon wafer exothermic material on lower base material panel, the side of the silicon wafer heater layer be equipped with invisible joint and invisible joint successively with steel pipe buried in advance pipe, temperature controller connects, the inlet-outlet line of the silicon wafer heater layer passes sequentially through invisible joint, steel pipe buried in advance pipe is connected in temperature controller.A kind of silicon wafer heating floor total system provided by the utility model, heating is rapid, energy conservation and environmental protection, is unlikely to deform.

Description

A kind of silicon wafer heating floor total system
Technical field
The utility model is related to heating floor technical field, especially a kind of silicon wafer heating floor total system.
Background technology
Silicon wafer floor heating fever tablet is a kind of New-type heating product, and compared to carbon crystal fever tablet, silicon wafer floor heating fever tablet is more Heating is rapid, environmentally friendly, energy saving, can bring the heating experience that user is more comfortable, safe and healthy;Compared to air-conditioning, hot-water heating, electricity The ground heating systems such as hotting mask, heating cable save operating cost;Silicon wafer floor heating fever tablet has fever fast, and thermal storage time is long, can Dismounting recycles, and spends less and is not required to advantage to be repaired, and normal service life was up to 50 years or more, for floor fever field With prodigious foreground.
Utility model content
In view of this, the purpose of this utility model is to provide a kind of silicon wafer heating floor total system, heating is rapid, saves Energy environmental protection is unlikely to deform.
The technical solution of the utility model is:A kind of silicon wafer heating floor total system, is followed successively by thermal insulation board from the bottom to top Layer, balance layer and silicon wafer heating layer, splicing is resistance to equipped with being equipped in several pieces of decorative layers and decorative layer on the silicon wafer heating layer Layer is ground, the silicon wafer heater layer includes upper and lower base material and the silicon wafer heating material that is uniformly coated on upper and lower base material panel Material, the decorative layer positioned at both ends include main board and extend the arc protrusion being equipped with and arc along a side of main board Arc seam allowance rank is constituted between shape protrusion and main board, each piece of centrally located decorative layer includes main board, Yi Jiyan The two side ends for main board extend the arc protrusion being equipped with and constitute arc seam allowance rank between arc protrusion and main board, several Arc seam allowance rank of the arc protrusion phase contract insertion of its adjacent right side decorative layer set on left side decorative layer when block decorative layer is spliced It is several to realize in arc protrusion of the arc seam allowance rank phase contract insertion equipped with left side decorative layer of interior and adjacent right side decorative layer Block decorative layer is spliced into the layer structure of surfacing, the side of the silicon wafer heater layer be equipped with invisible joint and invisible joint according to Secondary to be connect with steel pipe buried in advance pipe, temperature controller, the inlet-outlet line of the silicon wafer heater layer passes sequentially through invisible joint, steel pipe buried in advance pipe It is connected in temperature controller.
Preferably, the upper and lower base material is epoxy resin plate substrate.
Compared with prior art, the utility model has the advantages that:A kind of silicon wafer hair provided by the utility model Heating floor total system uses silicon wafer heating layer so that the heating of this silicon wafer heating floor is rapid, effectively energy saving;Polylith simultaneously Decorative layer agrees with filling between adjacent decorative layer when splicing using arc protrusion, arc seam allowance rank, avoids since decorative layer is spelled It makes moist, deform caused by the presence of seam gap, splicing the formaldehyde that glue exhales, safer durable, service life increases.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model.
Fig. 2 is the silicon wafer heater schematic diagram of a layer structure of the utility model.
Fig. 3 is the decorative layer structure schematic diagram of the utility model.
Specific implementation mode
Below in conjunction with the accompanying drawings and specific implementation mode, the utility model is described further.
As shown in Figure 1 to Figure 3, a kind of silicon wafer heating floor total system is followed successively by thermal insulation board layer 1, balance from the bottom to top Layer 2 and silicon wafer heating layer 3, splicing in several pieces of decorative layers 4 and decorative layer 4 equipped with being equipped with wearing layer 5 on silicon wafer heating layer 3.
Specifically, 3 layers of silicon wafer heater includes upper and lower base material 31 and is uniformly coated on 31 panel of upper and lower base material Silicon wafer exothermic material 32.Upper and lower base material 31 is epoxy resin plate substrate.The side of silicon wafer heater layer 3 be equipped with invisible joint 6 and Invisible joint 6 is connect with steel pipe buried in advance pipe 7, temperature controller 8 successively, and the inlet-outlet line of silicon wafer heater layer 3 passes sequentially through invisible joint 6, steel pipe buried in advance pipe 7 is connected in temperature controller 8, convenient for artificial observation temperature and temperature control.
Decorative layer 4 positioned at both ends includes main board 41 and extends the arc being equipped with along a side of main board 41 Arc seam allowance rank 43, each piece of centrally located decorative layer are constituted between protrusion 42 and arc protrusion 42 and main board 41 4 include main board 41 and extend the arc protrusion 42 that is equipped with along the two side ends of main board 41 and arc protrusion 42 with it is main Arc seam allowance rank 43 is constituted between body plate 41, the arc protrusion 42 of its adjacent right side decorative layer when several pieces of decorative layers 4 are spliced Phase contract is embedded in the arc seam allowance rank 43 of left side decorative layer and the 43 phase contract of arc seam allowance rank of adjacent right side decorative layer is embedding Enter to be equipped in the arc protrusion 42 of left side decorative layer to realize that several pieces of decorative layers 4 are spliced into the layer structure of surfacing.
A kind of silicon wafer heating floor total system provided by the utility model, uses silicon wafer heating layer so that this silicon wafer Heating floor heating is rapid, effectively energy saving;Using arc protrusion, arc between adjacent decorative layer when polylith decorative layer splicing simultaneously Seam allowance rank agrees with filling, avoids and is made moist, deformed caused by the presence that decorative layer splices gap, splice glue and exhale Formaldehyde, it is safer durable, service life increase.
The above embodiments are only the preferred embodiment of the utility model, and the right of the utility model cannot be limited with this Range, therefore, modification made according to the patent scope of the utility model, equivalent variations, improvement etc. still belong to the utility model institute The range covered.

Claims (2)

1. a kind of silicon wafer heating floor total system, it is characterised in that:It is followed successively by thermal insulation board layer, balance layer and silicon wafer from the bottom to top Heating layer, splicing is equipped with being equipped with wearing layer, the silicon wafer hair in several pieces of decorative layers and decorative layer on the silicon wafer heating layer Hot body layer includes upper and lower base material and the silicon wafer exothermic material that is uniformly coated on upper and lower base material panel, is located at the decoration at both ends Layer includes main board and extends the arc protrusion being equipped with and between arc protrusion and main board along a side of main board Arc seam allowance rank is constituted, each piece of centrally located decorative layer includes main board and prolong along the two side ends of main board It stretches the arc protrusion being equipped with and constitutes arc seam allowance rank between arc protrusion and main board, its phase when several pieces of decorative layers are spliced The arc protrusion phase contract of adjacent right side decorative layer is embedded in right side decoration adjacent in the arc seam allowance rank of left side decorative layer To realize that several pieces of decorative layers are spliced into surface in arc protrusion of the arc seam allowance rank phase contract insertion equipped with left side decorative layer of layer Smooth layer structure, the side of the silicon wafer heater layer be equipped with invisible joint and invisible joint successively with steel pipe buried in advance pipe, temperature Device connection is controlled, the inlet-outlet line of the silicon wafer heater layer passes sequentially through invisible joint, steel pipe buried in advance pipe is connected in temperature controller.
2. a kind of silicon wafer heating floor total system according to claim 1, it is characterised in that:The upper and lower base material is Epoxy resin plate substrate.
CN201721102612.7U 2017-08-30 2017-08-30 A kind of silicon wafer heating floor total system Expired - Fee Related CN207660239U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721102612.7U CN207660239U (en) 2017-08-30 2017-08-30 A kind of silicon wafer heating floor total system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721102612.7U CN207660239U (en) 2017-08-30 2017-08-30 A kind of silicon wafer heating floor total system

Publications (1)

Publication Number Publication Date
CN207660239U true CN207660239U (en) 2018-07-27

Family

ID=62935775

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201721102612.7U Expired - Fee Related CN207660239U (en) 2017-08-30 2017-08-30 A kind of silicon wafer heating floor total system

Country Status (1)

Country Link
CN (1) CN207660239U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114872799A (en) * 2020-12-25 2022-08-09 王辉 Floor warms up car as a house

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114872799A (en) * 2020-12-25 2022-08-09 王辉 Floor warms up car as a house

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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180727

Termination date: 20210830