CN207637760U - A kind of wafer is from the heating device that suspends - Google Patents
A kind of wafer is from the heating device that suspends Download PDFInfo
- Publication number
- CN207637760U CN207637760U CN201721919379.1U CN201721919379U CN207637760U CN 207637760 U CN207637760 U CN 207637760U CN 201721919379 U CN201721919379 U CN 201721919379U CN 207637760 U CN207637760 U CN 207637760U
- Authority
- CN
- China
- Prior art keywords
- heating device
- wafer
- babinet
- heating
- suspends
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 61
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 238000003860 storage Methods 0.000 claims abstract description 4
- 239000000523 sample Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000010425 asbestos Substances 0.000 claims description 4
- 229910052895 riebeckite Inorganic materials 0.000 claims description 4
- 238000004458 analytical method Methods 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 45
- 238000009826 distribution Methods 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The utility model is related to a kind of wafers from the heating device that suspends, including：Babinet；Air supporting microscope carrier is used to carry out supporting to wafer, is arranged in the bottom of babinet and is connected with feeder；Heating device is located at the top of babinet, the setting of air supporting microscope carrier is faced, for being heated to wafer；Temperature measuring unit for carrying out temperature detection to crystal column surface in real time, and sends out temperature signal；Processing unit receives temperature signal, and is compared, analyzed with the theory of correspondences heating process of storage, and sends out corresponding control signal to feeder.So, wafer is suspended in babinet and is heated, and keeps the Temperature Distribution in its each region consistent.Processing unit changes the distance between wafer and heating device by controlling the size of feeder air demand, so that its surface temperature is consistent with theoretical heating process.It is damaged caused by touching crystal column surface in addition, can also be reduced using floated mode of heating.
Description
Technical field
The utility model is related to wafer technical field of heating more particularly to a kind of wafers from the heating device that suspends.
Background technology
According to different manufacturing process, such as alloy, oxidation or nitridation, ion implanting annealing, dopant activation and gettering
Deng, generally require to wafer carry out heating for multiple times processing, so that the damage of crystal is repaired, and eliminate dislocation and grown-in defects.
The prior art is usually placed on wafer on the quartzy frame in process cavity and is heat-treated, so, on the one hand, quartzy frame and crystalline substance
Circle contact can influence the transmission of crystal column surface heat, cause wafer different zones heating temperature inconsistent, be easy that it is made to generate shape
Become；On the other hand, in certain techniques, integrated circuit has been produced in the front of wafer, also needs to carry out at heating its back side
Reason, then the front of wafer is not suitable for and quartz contact, if contact, is easy to damage its front-side integrated circuit.
Utility model content
The purpose of this utility model is to overcome deficiencies in the prior art, provide a kind of simple in structure, temperature control
Wafer that is accurate and being avoided that damage wafer is from the heating device that suspends.
In order to solve the above-mentioned technical problem, the utility model is related to a kind of wafers from the heating device that suspends, including：
Babinet；
Air supporting microscope carrier is used to carry out supporting to wafer, is arranged in the bottom of babinet and is connected with feeder；
Heating device is located at the top of babinet, the setting of air supporting microscope carrier is faced, for being heated to wafer；
Temperature measuring unit for carrying out temperature detection to crystal column surface in real time, and sends out temperature signal；
Processing unit in real time receives temperature signal, and compared with the theory of correspondences heating process of storage,
Analysis, and corresponding control signal is sent out to feeder.
Wafer is suspended in babinet so that Temperature Distribution is consistent in its each region.Processing unit is by controlling feeder
The size of air demand changes the distance between wafer and heating device, to control the temperature on its surface so that its
Surface temperature is consistent with theoretical heating process.In addition, can also be reduced using floated mode of heating because touching to wafer table
Damage caused by face.
Temperature measuring unit includes infrared temperature probe as a further improvement of the utility model,.
Infrared temperature probe can measure surface of moving object temperature, and high with temperature measurement accuracy, reaction sensitivity
The advantages that high.
Infrared temperature probe quantity is multiple as a further improvement of the utility model, and is distributed in the top of wafer.
It can in real time, accurately reflect wafer table by being distributed in the data that each infrared temperature probe above wafer measures
The thermo parameters method in face can carry out multi-parameter comparison, analysis, to just by wafer surface temperature field and theoretical heating process
In more accurately being heated to wafer.
Inert gas is filled in babinet as a further improvement of the utility model,.
When being heated to wafer, the inert gas in babinet can be effectively prevented wafer and be aoxidized.
Inert gas is nitrogen as a further improvement of the utility model,.
Heating device is the multigroup heating tube for being laid in top of the box as a further improvement of the utility model,.
In order to enable the wafer is simple in structure from suspension heating device, convenient for rationally utilizing space, using multigroup heating tube
It is laid in the arrangement of top of the box, and heating tube itself has thermal efficiency height, the strong feature of environmental suitability.
Protection case is provided with below heating tube as a further improvement of the utility model,；On the protection case
It is provided with the hole for infrared temperature probe stretching.
Protection case is provided with below heating tube, so, avoids during picking and placeing wafer mechanical arm to heating
It is damaged caused by pipe is possible.The hole being arranged on protection case can farthest reduce it to infrared temperature probe thermometric accuracy
Influence.
Air supporting microscope carrier uses ceramic material as a further improvement of the utility model,.
Ceramics have the characteristics that high temperature resistant, temperature distortion are small, to ensure that the air cushion that air supporting microscope carrier is formed is balanced, are conducive to
Ensure levelness when wafer suspends.
The outer wall of babinet is enclosed with insulating layer as a further improvement of the utility model,.
Insulating layer is arranged on wall outside the enclosure can reduce scattering and disappearing for heat very well, greatly reduce wafer from the heating dress that suspends
Set energy consumption.
Insulating layer is made by asbestos as a further improvement of the utility model,.
Asbestos have preferable heat insulation effect, and price is relatively low.
Description of the drawings
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is some embodiments of the utility model, for those of ordinary skill in the art, in the premise not made the creative labor
Under, other drawings may also be obtained based on these drawings.
Fig. 1 is structural schematic diagram of the utility model wafer from suspension heating device.
1- babinets；2- air supporting microscope carriers；3- heating devices；4- temperature measuring units；5- wafers；6- protects case.
Specific implementation mode
With reference to specific embodiment, the content of the utility model is described in further detail：
In order to reach the purpose of this utility model, Fig. 1 shows the utility model wafer from the structure of suspension heating device
Schematic diagram.The wafer includes babinet 1 from suspension heating device, and the bottom of babinet 1 is provided with air supporting microscope carrier 2, is filled with gas supply
It sets connected.The stomata that multiple supplied gas of uniformly gathering on the air supporting microscope carrier 2 are passed through.When feeder is had an effect, in air supporting
Air cushion for supporting wafer 5 is formed at the top of microscope carrier 2.It is provided with frequency converter on the motor of the feeder, for it
Power is controlled, to control the size of air demand.The top of babinet 1 is provided with heating device 3 and temperature measuring unit 4,
In, heating device 3 faces the setting of air supporting microscope carrier 2, for being heated to wafer 5.The heating device 3 it include multigroup heating
Pipe, and all heating tubes are laid in 1 top of babinet；Temperature measuring unit 4 to 5 surface of wafer for carrying out temperature detection in real time, concurrently
Go out temperature signal comprising multiple infrared temperature probes.In order to avoid mechanical arm makes heating tube during taking, putting crystalline substance 5 and justifying
At damage, protection case 6 is also provided with below heating tube.It offers and multiple is stretched for infrared temperature probe on the protection case 6
The hole gone out.In addition, being additionally provided with processing unit outside babinet 1, temperature signal can be received in real time, and with storage
Theory of correspondences heating process compared, analyzed, and send out corresponding control signal to above-mentioned frequency converter.The wafer adds from suspending
When heating to wafer 5, wafer 5 is suspended in babinet 1 thermal so that Temperature Distribution is consistent in its each region.
Processing unit realizes the adjusting to the size of air demand by controlling the frequency converter on feeder motor, to change crystalline substance
Circle the distance between 5 and heating device 3, so that 5 surface temperature of wafer is consistent with theoretical heating process.In addition, using
Floated mode of heating can also be reduced to be damaged caused by touching 5 surface of wafer.
As advanced optimizing, inert gas is filled in babinet, preferably low-cost nitrogen can be effectively prevented crystalline substance
Circle 5 is aoxidized.
As advanced optimizing, air supporting microscope carrier 2 uses ceramic material, so that 2 temperature distortion of air supporting microscope carrier is smaller, protects
It is balanced to demonstrate,prove the air cushion that air supporting microscope carrier 2 is formed, advantageously ensures that levelness when wafer 5 suspends, ensures its heated uniformity.
Finally, from heat loss is reduced, energy utilization rate is improved, from the aspect of lowering energy consumption, is also wrapped in the outer wall of babinet 1
The insulating layer being made of asbestos is wrapped up in.
To the explanation of the disclosed embodiments, professional and technical personnel in the field is enable to realize or use this practicality new
Type.Various modifications to these embodiments will be apparent to those skilled in the art, and determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The widest range consistent with features of novelty.
Claims (10)
- The heating device 1. a kind of wafer suspends certainly, which is characterized in that including：Babinet；Air supporting microscope carrier is used to carry out supporting to wafer, is arranged in the bottom of the babinet and is connected with feeder；Heating device is located at the top of the babinet, the air supporting microscope carrier setting is faced, for adding to the wafer Heat；Temperature measuring unit for carrying out temperature detection to the crystal column surface in real time, and sends out temperature signal；Processing unit receives the temperature signal, and is compared, divided with the theory of correspondences heating process of storage Analysis, and corresponding control signal is sent out to the feeder.
- The heating device 2. wafer according to claim 1 suspends certainly, which is characterized in that the temperature measuring unit includes infrared survey Temperature probe.
- 3. wafer according to claim 2 is from suspending heating device, which is characterized in that the infrared temperature probe quantity is It is multiple, and it is distributed in the top of the wafer.
- The heating device 4. wafer according to claim 1 suspends certainly, which is characterized in that fill indifferent gas in the babinet Body.
- The heating device 5. wafer according to claim 4 suspends certainly, which is characterized in that the inert gas is nitrogen.
- The heating device 6. wafer according to claim 2 suspends certainly, which is characterized in that the heating device is is laid in State multigroup heating tube of top of the box.
- The heating device 7. wafer according to claim 6 suspends certainly, which is characterized in that be arranged in the lower section of the heating tube There is protection case；It is provided with the hole stretched out for the infrared temperature probe on the protection case.
- The heating device 8. wafer according to claim 1 suspends certainly, which is characterized in that the air supporting microscope carrier is using ceramic material Matter.
- The heating device 9. wafer according to any one of claim 1-8 suspends certainly, which is characterized in that in the babinet Outer wall is enclosed with insulating layer.
- The heating device 10. wafer according to claim 9 suspends certainly, which is characterized in that the insulating layer is made by asbestos.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721919379.1U CN207637760U (en) | 2017-12-29 | 2017-12-29 | A kind of wafer is from the heating device that suspends |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721919379.1U CN207637760U (en) | 2017-12-29 | 2017-12-29 | A kind of wafer is from the heating device that suspends |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207637760U true CN207637760U (en) | 2018-07-20 |
Family
ID=62851885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721919379.1U Active CN207637760U (en) | 2017-12-29 | 2017-12-29 | A kind of wafer is from the heating device that suspends |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207637760U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024139774A1 (en) * | 2022-12-25 | 2024-07-04 | 北京屹唐半导体科技股份有限公司 | Heat treatment apparatus, control method and apparatus, electronic device, storage medium, and program product |
-
2017
- 2017-12-29 CN CN201721919379.1U patent/CN207637760U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024139774A1 (en) * | 2022-12-25 | 2024-07-04 | 北京屹唐半导体科技股份有限公司 | Heat treatment apparatus, control method and apparatus, electronic device, storage medium, and program product |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204101203U (en) | A kind of thermopair | |
| CN104617008A (en) | Wafer heating device | |
| CN207637760U (en) | A kind of wafer is from the heating device that suspends | |
| CN104250852B (en) | Sapphire crystal growth device and growing method | |
| CN106872516A (en) | Vacuum and permanent magnet magnetothermal effect measuring instrument | |
| CN203593622U (en) | Device for preparing graphene on silicon carbide substrate | |
| CN203964663U (en) | Novel temperature measuring heating furnace | |
| CN201962418U (en) | Sapphire single crystal furnace | |
| CN117320204A (en) | Uniform temperature radiation heating module and control system thereof | |
| CN111926380A (en) | Heat shield device for single crystal production furnace, control method and single crystal production furnace | |
| CN204374028U (en) | A kind of high temperature fluid density measurement device with heating function | |
| CN104155019B (en) | Temperature measuring equipment and temp measuring method | |
| CN210560730U (en) | Microelectrode sample heating table of vacuum deposition system | |
| CN109297304B (en) | A non-uniform heating method of alkali metal gas chamber based on finite element analysis | |
| CN206177715U (en) | Two experiment heating device that draw of heat | |
| CN202390580U (en) | Constant temperature device for solar cell diffusion source phosphorus oxychloride (POCl3) | |
| CN203300611U (en) | Dry etching device lower electrode and dry etching device | |
| CN207243986U (en) | Vacuum coating equipment | |
| CN201765068U (en) | Device for measuring temperature uniformity of heating table top of laminating machine | |
| CN211509329U (en) | Single crystal element preparation system | |
| CN214011454U (en) | A lithium-ion battery test device | |
| CN207490867U (en) | A kind of multichannel solar cell temperature coefficient test equipment | |
| CN106814103A (en) | A kind of device for measuring vacuum glass heat transfer coefficient | |
| CN207299750U (en) | A kind of new silk product drying unit | |
| CN206282905U (en) | An incubator and liquid metal battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Room 3, No. 248, Chenghu Road, Kunshan Development Zone, Suzhou City, Jiangsu Province 215300 Patentee after: Chenggong Environmental Protection Technology (Nantong) Co.,Ltd. Address before: Room 3, No. 248, Chenghu Road, Kunshan Development Zone, Suzhou City, Jiangsu Province 215300 Patentee before: KUNSHAN CHENGGONG ENVIRONMENTAL PROTECTION TECHNOLOGY CO.,LTD. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221202 Address after: No. 323, Jinchuan Road, Nantong Hi tech Industrial Development Zone, Nantong, Jiangsu 226399 Patentee after: Jiangsu Sizhi Semiconductor Technology Co.,Ltd. Address before: Room 3, No. 248, Chenghu Road, Kunshan Development Zone, Suzhou City, Jiangsu Province 215300 Patentee before: Chenggong Environmental Protection Technology (Nantong) Co.,Ltd. |