CN207338419U - A kind of vertical stratification zno-based LED chip - Google Patents
A kind of vertical stratification zno-based LED chip Download PDFInfo
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- CN207338419U CN207338419U CN201721382783.XU CN201721382783U CN207338419U CN 207338419 U CN207338419 U CN 207338419U CN 201721382783 U CN201721382783 U CN 201721382783U CN 207338419 U CN207338419 U CN 207338419U
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Abstract
The utility model discloses a kind of vertical stratification zno-based LED chip, including：The Metal/Al Ref electrode as p-type electrode, the p-type Zn being arranged in order from the bottom to topxMg1‑xO substrate layers, i types Al2O3Film layer, N-shaped ZnO film layer and n-type electrode.Using the p-type Zn of high qualityxMg1‑xO substrate layers, solve the difficulty for being difficult to prepare high quality p-type ZnO, can largely improve the light efficiency of LED, LED chip structure is simple, simplifies technique, using vertical stratification, using Metal/Al Ref electrode, there is extremely strong reflex to light, be conducive to improve light extraction efficiency.
Description
Technical field
A kind of LED chip structure is the utility model is related to, particularly a kind of vertical stratification zno-based LED chip.
Background technology
Light emitting diode (LED) has many merits such as energy-saving and environmental protection, long lifespan, is the certainty of following illumination and display
Development trend.At present, LED is based on GaN semi-conducting materials mostly.However, GaN material due to manufacturing equipment is relatively expensive,
The problems such as resource is limited, thin film epitaxy is difficult limits its sustainable development.Therefore research and development next generation's LED semi-conducting materials are in time
Very necessary and urgent.The exciton bind energy of ZnO semi-conducting materials is up to 60meV, is far longer than (25meV) of GaN, favorably
In realizing Laser emission at room temperature, and have the advantages that epitaxial growth temperature is low, filming performance is good, abundant raw materials, nontoxic,
And the preparation and its device application study of ZnO also becomes hot spot in recent years.
It is very big to the compensating effect of p-type doping but the inside point defect of ZnO is very more, thus high quality p-type is adulterated
ZnO prepares very difficult.At present generally by the extension N-shaped ZnO film in p-type GaN film, but interface therebetween is deposited
In very more point defects, luminous efficiency is seriously affected, and epitaxial structure is complicated.In order to promote the development of zno-based LED, use
A kind of simple and effective scheme seems particularly important to improve the performance of zno-based LED.
Utility model content
To solve the above problems, the purpose of this utility model is to provide a kind of vertical stratification zno-based LED chip, structure
Simply, process can be simplified in production, the requirement to production equipment is reduced, effectively improve the light extraction efficiency of LED.
Technical solution is used by the invention for solving the technical problem：
A kind of vertical stratification zno-based LED chip, including：The metal Al as p-type electrode being arranged in order from the bottom to top is anti-
Radio pole, p-type ZnxMg1-xO substrate layers, i types Al2O3Film layer, N-shaped ZnO film layer and n-type electrode.Using the p-type of high quality
ZnxMg1-xO substrate layers, solve the difficulty for being difficult to prepare high quality p-type ZnO, can largely improve zno-based LED
Light efficiency, the LED chip structure is simple, simplifies technique, using vertical stratification, using Metal/Al Ref electrode, has to light
Extremely strong reflex, is conducive to improve the light extraction efficiency of LED.
Preferably, the p-type ZnxMg1-xX value ranges are in O substrate layers：0<x<0.3.
Further, the i types Al2O3Film layer includes one layer of Ag nanometer layer.Suppress defect by Ag nanometer layers to radiate, carry
High band-edge emission, while using the reflection characteristic of Ag nanometer layers, strengthen light extraction efficiency, so as to effectively improve the light extraction efficiency of LED.
Further, the i types Al2O3Thin film layer thickness is 2-15nm.
Further, the N-shaped ZnO film layer thickness is 300-1500nm.
Preferably, the n-type electrode selects Al monocrystalline or Cu monocrystal materials.Directly made using Al monocrystalline or Cu monocrystalline
For support substrate, while play the role of n-electrode, and heat dissipation metal performance is very good, is advantageously implemented super-high-power LED core
Piece.
The beneficial effects of the utility model are：A kind of vertical stratification zno-based LED chip that the utility model uses, uses
The p-type Zn of high qualityxMg1-xO substrate layers, solve the difficulty for being difficult to prepare high quality p-type ZnO, can largely carry
The light efficiency of high LED, the LED chip structure is simple, simplifies technique, using vertical stratification, using Metal/Al Ref electrode, to light
With extremely strong reflex, be conducive to improve light extraction efficiency.
Brief description of the drawings
The utility model is described in further detail with example below in conjunction with the accompanying drawings.
Fig. 1 is a kind of structure diagram of vertical stratification zno-based LED chip of the utility model；
Fig. 2 is a kind of structure diagram (nanometer layer containing Ag) of vertical stratification zno-based LED chip of the utility model.
Embodiment
Reference Fig. 1-Fig. 2, a kind of vertical stratification zno-based LED chip of the utility model, including：Arrange successively from the bottom to top
The Metal/Al Ref electrode 11 as p-type electrode, the p-type Zn of rowxMg1-xO substrate layers 12, i types Al2O3Film layer 13, N-shaped ZnO
Film layer 14 and n-type electrode 15.Using the p-type Zn of high qualityxMg1-xO substrate layers 12, solve and are difficult to prepare high quality p-type
The difficulty of ZnO, can largely improve the light efficiency of LED, simple in structure, simplify technique, using vertical stratification, use
Metal/Al Ref electrode 11, has extremely strong reflex to light, is conducive to improve light extraction efficiency.
Preferably, the p-type ZnxMg1-xX value ranges are in O substrate layers 12：0<x<0.3.
Further, the i types Al2O3Film layer 13 includes one layer of Ag nanometer layer 16.Defect spoke is suppressed by Ag nanometer layers 16
Penetrate, improve band-edge emission, while using the reflection characteristic of Ag nanometer layers 16, strengthen light extraction efficiency, so as to effectively improve the device of LED
Part efficiency.
Further, the i types Al2O313 thickness of film layer is 2-15nm.
Further, 14 thickness of N-shaped ZnO film layer is 300-1500nm.
Preferably, the n-type electrode 15 selects Al monocrystalline or Cu monocrystal materials.Directly use Al monocrystalline or Cu monocrystalline
As support substrate, while play the role of n-electrode, and heat dissipation metal performance is very good, is advantageously implemented super-high-power LED
Chip.
The preferred embodiment of the above, simply the utility model, the utility model are not limited to above-mentioned implementation
Mode, as long as it reaches the technique effect of the utility model with identical means, should all belong to the scope of protection of the utility model.
Claims (6)
- A kind of 1. vertical stratification zno-based LED chip, it is characterised in that including：The conduct p-type electrode being arranged in order from the bottom to top Metal/Al Ref electrode (11), p-type ZnxMg1-xO substrate layers (12), i types Al2O3Film layer (13), N-shaped ZnO film layer (14) With n-type electrode (15).
- A kind of 2. vertical stratification zno-based LED chip according to claim 1, it is characterised in that the p-type ZnxMg1-xO is served as a contrast X value ranges are in bottom (12)：0<x<0.3.
- A kind of 3. vertical stratification zno-based LED chip according to claim 1, it is characterised in that the i types Al2O3Film Layer (13) includes one layer of Ag nanometer layer (16).
- A kind of 4. vertical stratification zno-based LED chip according to claim 1, it is characterised in that the i types Al2O3Film Layer (13) thickness is 2-15nm.
- A kind of 5. vertical stratification zno-based LED chip according to claim 1, it is characterised in that the N-shaped ZnO film layer (14) thickness is 300-1500nm.
- A kind of 6. vertical stratification zno-based LED chip according to claim 1, it is characterised in that the n-type electrode (15) Select Al monocrystalline or Cu monocrystal materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721382783.XU CN207338419U (en) | 2017-10-24 | 2017-10-24 | A kind of vertical stratification zno-based LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721382783.XU CN207338419U (en) | 2017-10-24 | 2017-10-24 | A kind of vertical stratification zno-based LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207338419U true CN207338419U (en) | 2018-05-08 |
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| CN201721382783.XU Active CN207338419U (en) | 2017-10-24 | 2017-10-24 | A kind of vertical stratification zno-based LED chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107681028A (en) * | 2017-10-24 | 2018-02-09 | 江门市奥伦德光电有限公司 | A kind of vertical stratification zno-based LED chip and preparation method thereof |
-
2017
- 2017-10-24 CN CN201721382783.XU patent/CN207338419U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107681028A (en) * | 2017-10-24 | 2018-02-09 | 江门市奥伦德光电有限公司 | A kind of vertical stratification zno-based LED chip and preparation method thereof |
| CN107681028B (en) * | 2017-10-24 | 2023-08-29 | 江门市奥伦德光电有限公司 | ZnO-based LED chip with vertical structure and preparation method thereof |
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