CN206672941U - The group string attachment structure of P-type crystal silicon back contacts double-side cell, component - Google Patents
The group string attachment structure of P-type crystal silicon back contacts double-side cell, component Download PDFInfo
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- CN206672941U CN206672941U CN201720297541.4U CN201720297541U CN206672941U CN 206672941 U CN206672941 U CN 206672941U CN 201720297541 U CN201720297541 U CN 201720297541U CN 206672941 U CN206672941 U CN 206672941U
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- flow guide
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- pole flow
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 42
- 239000010703 silicon Substances 0.000 title claims abstract description 42
- 239000013078 crystal Substances 0.000 title claims abstract description 39
- 239000011148 porous material Substances 0.000 claims description 16
- 230000005611 electricity Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 239000002313 adhesive film Substances 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 8
- 238000004806 packaging method and process Methods 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- 230000008676 import Effects 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005538 encapsulation Methods 0.000 abstract description 5
- 229910052709 silver Inorganic materials 0.000 abstract description 5
- 239000004332 silver Substances 0.000 abstract description 5
- 230000004927 fusion Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000005336 safety glass Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004804 winding Methods 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- -1 battery pack string Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000036642 wellbeing Effects 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The utility model provides a kind of group string attachment structure of P-type crystal silicon back contacts double-side cell, component, including at least two cell pieces, the cell piece back side is intervally arranged and has positive pole flow guide bar and negative pole flow guide bar, the often capable just superfine grid line in the back side of positive pole flow guide bar connection, negative pole flow guide bar connects multiple via silver electrodes of each row, positive pole flow guide bar and negative pole flow guide bar electrically insulated from one another；The positive pole flow guide bar of adjacent cell piece connects to form battery pack string with negative pole flow guide bar by conductive connecting strap；Or the positive pole flow guide bar of cell piece comes together in the positive pole electric current collection bar of cell piece opposite side respectively with negative pole flow guide bar and cathodal current collects bar, fourchette shape electrode structure is formed, positive pole electric current collection bar and the cathodal current of adjacent cell piece collect bar and connect to form battery pack string by conductive connecting strap.The utility model greatly strengthen the degrees of fusion with existing module encapsulation techniques, improves the conversion efficiency of component, simplifies technique.
Description
Technical field
The utility model belongs to technical field of solar batteries, more particularly to a kind of P-type crystal silicon back contacts double-side cell
Group string attachment structure, component.
Background technology
At present, crystal silicon solar energy battery accounts for more than the 90% of solar cell overall global market, crystalline silicon battery plate
Producing line conversion efficiency broken through 21% at present, global year adding new capacity about 70GW and speedup is obvious, with thermal power generation
Spend electric cost constantly to reduce, be expected to maintain an equal level therewith in the coming years.Crystal silicon solar energy battery is changing as a kind of clean energy resource
The important function for becoming energy resource structure, alleviation environmental pressure etc. increasingly highlights.
Crystal silicon battery component is the core terminal unit of photovoltaic generation, and its conversion efficiency and cost are by extreme influence photovoltaic electric
The economic well-being of workers and staff stood.P-type crystal silicon battery component is because mature production technology, manufacturing cost are low, current and considerably long from now on
A period of time in still occupy most market shares.
P-type crystal silicon solar cell module wants to continue to keep competitiveness, obtains bigger development and application, it is necessary to enters
One step improves conversion efficiency, while reduces production cost.Most efficient method is to improve constantly the conversion efficiency of crystal silicon cell.
For example MWT technologies are introduced in the two-sided PERC batteries of P-type crystal silicon, the light shielded area of battery front side can be not only reduced, also
By the passivating film at the back side electrode roll can be prevented around rear electric leakage.But the group series winding of this p-type back contacts double-side cell piece is connected
Often will use conductive backings, conducting resinl, it is necessary to increase dispensing, EVA punching, alignment etc. process, technological requirement and production cost compared with
Height, it is compatible poor with existing component package equipment.
Utility model content
The purpose of this utility model there is provided the group string attachment structure of P-type crystal silicon back contacts double-side cell, component, lead to
Overcurrent flow guide bar, electric current collection band and conductive connecting strap connect adjacent cell, form battery pack string.Meeting p-type
While the encapsulation of crystal silicon back contacts double-side cell requires, the degrees of fusion with existing module encapsulation techniques is greatly strengthen, is improved
The conversion efficiency of component, simplifies technique, reduces production cost.
To reach above-mentioned purpose, the technology of preparing scheme that the utility model uses for：
A kind of group string attachment structure of P-type crystal silicon back contacts double-side cell, including at least two P-type crystal silicon back contacts
Double-side cell piece, the cell piece back side, which is intervally arranged, positive pole flow guide bar and negative pole flow guide bar, and the connection of positive pole flow guide bar is often gone
The just superfine grid line in the back side, negative pole flow guide bar connect the multiple of each row and cross pore electrod, and positive pole flow guide bar and negative pole flow guide bar are mutual
Electric insulation；
The positive pole flow guide bar of adjacent cell piece connects to form battery pack string with negative pole flow guide bar by conductive connecting strap；Or
The positive pole flow guide bar of cell piece comes together in the positive pole electric current collection bar and cathodal current of cell piece opposite side with negative pole flow guide bar respectively
Bar is collected, forms fourchette shape electrode structure, positive pole electric current collection bar and the cathodal current of adjacent cell piece collect bar and pass through conduction
Connect band connects to form battery pack string.
Described P-type crystal silicon back contacts double-side cell piece is included successively by front to the back side：The thin grid line of front negative pole, just
Face antireflective coating, front passivating film, n-type doping layer, p-type crystal silicon matrix, the first backside passivation film, the second backside passivation film and the back of the body
The just superfine grid line in face；The thin grid line of front negative pole of battery front side arrangement collects electronics, and by penetrating the pore electrod excessively of cell piece
Import the negative pole flow guide bar at the back side；The just superfine grid line in the back side of cell backside and back side positive pole main gate line be distributed in pore electrod with
Outer region, the hole that cell backside is collected import the positive pole flow guide bar at the back side.
The just superfine grid line in the described back side is one or more groups of line segments being parallel to each other, and length is 10~80mm, and width is
30~300um, the spacing of adjacent rows line segment is 1~4mm.
The described just superfine grid line in each group of back side intersects with least one positive pole flow guide bar, the width of single positive pole flow guide bar
Spend for 0.5~5mm.
Described positive pole flow guide bar is back side positive pole main gate line or the conductive connecting strap being bonded in main gate line；Described is negative
Pole flow guide bar each arranged being conductively connected on pore electrod to connect each negative pole main gate line arranged on pore electrod or being bonded in
Band.
Described conductive connecting strap is welding, reflective solder strip or electrically conducting transparent bar；The positive pole electric current collection bar and negative pole
Electric current collection bar is the extended structure of welding, reflective solder strip, electrically conducting transparent bar or positive and negative electrode main grid.
Described positive pole flow guide bar and negative pole flow guide bar is parallel to each other, and positive pole flow guide bar mutually hangs down with the just superfine grid line in the back side
Directly.
Described cell piece is full wafer p-type single multi- crystalline substance battery, or p-type single multi- battery after burst.
A kind of photovoltaic module of generating electricity on two sides, include the group series winding binding of described P-type crystal silicon back contacts double-side cell
Structure, by front to the back side, light transmissive material, front packaging adhesive film, group string attachment structure, the back side encapsulate photovoltaic module on lamination successively
Glued membrane, lower light transmissive material；In group string attachment structure, the conductive connecting strap front between adjacent cell piece sets reflective structure.
Relative to prior art, the utility model has following benefit：
The utility model group string attachment structure connects the just superfine grid line in the back side, the connection of negative pole flow guide bar by positive pole flow guide bar
Via silver electrode, positive pole flow guide bar and negative pole flow guide bar electrically insulated from one another；Positive pole flow guide bar is connected with negative pole flow guide bar by conduction
Tape splicing connects to form battery pack string；Or the positive pole flow guide bar of cell piece comes together in cell piece opposite side respectively with negative pole flow guide bar
Corresponding electric current collection bar, then battery pack string is formed by the connection of conductive connecting strap 13.This attachment structure simplifies positive electricity
Caused by the winding of pole the problem of cell piece Joining Technology complexity.Meeting what the encapsulation of p-type crystal silicon back contacts double-side cell required
Meanwhile the degrees of fusion with existing module encapsulation techniques is greatly strengthen, the conversion efficiency of component is improved, simplifies technique, is dropped
Low production cost.
Further, P-type crystal silicon back contacts double-side cell piece of the present utility model is overleaf introduced in passivation cell technology
Front electrode winding technique, two kinds of efficient crystal silicon battery technologies are made to be combined together well, its positive effect, which is better than, individually to be made
With its a certain item technology.By reducing the light shielded area of battery front side electrode, make the front of battery be improved；Battery simultaneously
The passivating film at the back side solves electrical leakage problems of the metallic coil in well.In addition, the local aluminium electrode of cell backside is changed to
The thin grid line of aluminium, makes battery have the function of generating electricity on two sides.
Photovoltaic module structure of the present utility model, by using above-mentioned group of string attachment structure so that whole component package work
The degrees of fusion of skill, the conversion efficiency of component is improved, simplifies technique, reduces production cost.
Brief description of the drawings
Fig. 1 is partial cutaway schematic of the P-type crystal silicon back contacts double-side cell along back side positive pole main gate line direction；
Fig. 2 is the fourchette shape back electrode structure schematic diagram that flow guide bar is formed with collecting bar；
Fig. 3 refers to the cell piece connection diagram of diverging electrodes structure；
Fig. 4 is to be parallel to each other and the back side positive and negative electrode flow guide bar schematic diagram of equidistantly distributed；
Fig. 5 is parallel flow guide bar straight line connection diagram；
Fig. 6 is the schematic diagram of P-type crystal silicon back contacts double-side cell connection component.
Wherein, 1 is antireflective coating, and 2 be front passivating film, and 3 be N-type film, and 4 be p-type matrix, and 5 be backside passivation film, and 6 are
Backside passivation film, 7 be the just superfine grid line in the back side, and 8 be pore electrod, and 9 be that cathodal current collects bar, and 10 be positive pole flow guide bar, 11
It is positive pole electric current collection bar for negative pole flow guide bar, 12,13 be conductive connecting strap, and 14-1 is upper light transmissive material, and 14-2 is lower printing opacity
Material, 15 be reflective structure, and 16 be packaging adhesive film.
Embodiment
As shown in figure 1, a kind of group string attachment structure of P-type crystal silicon back contacts double-side cell of the present utility model, described
The following structural features of battery：The two-sided crystal silicon battery of p-type includes from front to the back side：The thin grid line of front negative pole, antireflective coating 1,
Front passivating film 2, n-type doping layer 3, p-type crystal silicon matrix 4, backside passivation film 5, the just superfine grid line 7 in the back side, back side positive pole main grid
Line, back side negative pole cross pore electrod 8 and main gate line.The thin grid line of front negative pole of battery front side collects electronics, and by crossing pore electrod 8
Import the negative pole main gate line at the back side；The passivating film at the back side has isolated the both positive and negative polarity of cell backside well, avoids leaking electricity；Battery is carried on the back
The just superfine grid line in face is distributed in non-via electrode zone, and the hole that cell backside is collected imports back side positive pole main gate line.The back side
Just superfine grid line is one or more groups of line segments being parallel to each other, and length is 10~80mm, and width is 30~300um, two neighboring
Spacing between line segment is 1~4mm.
The just superfine grid line in each group of back side intersects vertically with least one back side positive pole main gate line, back side positive pole main gate line
Number is 3~15, and the width of single back side positive pole main gate line is 0.5~5mm.
As shown in Figures 2 to 5, by backplate figure, the negative pole flow guide bar 11 and positive pole flow guide bar 10 for making battery are spaced
Parallel arrangement is remained electrically isolated from therebetween at the back side of battery.The positive pole flow guide bar 10 of adjacent cell piece and negative pole flow guide bar
11 form battery pack string by the connection of conductive connecting strap 13；Or the positive pole flow guide bar 10 of cell piece is distinguished with negative pole flow guide bar 11
The corresponding electric current collection bar 12 and 9 of cell piece opposite side is come together in, forms fourchette shape electrode structure, the positive pole electricity of adjacent cell piece
Stream is collected bar and linked together with cathodal current collection bar by conductive connecting strap 13, forms battery pack string.
A kind of group string connection method of P-type crystal silicon back contacts double-side cell of the utility model, is comprised the following steps that：
(1) positive pole flow guide bar 10 is made in the back side positive pole main gate line at the P-type crystal silicon back contacts double-side cell back side, with
And negative pole flow guide bar 11 was made on pore electrod 8 in each arrange；Or the positive pole at the P-type crystal silicon back contacts double-side cell back side
Flow guide bar 10 and negative pole flow guide bar 11 come together in respectively cell back in face of side electric current collection bar (cathodal current collect bar 9 and
Positive pole electric current collection bar 12), fourchette shape electrode structure is formed, as shown in Figures 2 to 5.
The positive pole flow guide bar 10 is back side positive pole main gate line or the conductive connecting strap being bonded in main gate line；
The negative pole flow guide bar 11 is each negative pole main gate line arranged on pore electrod of connection or is bonded in each row via
Conductive connecting strap on electrode；
The conductive connecting strap 13 is common welding, reflective solder strip or electrically conducting transparent bar, and the width of conductive connecting strap is 0.5
~5mm；
The electric current collection bar 9 and 12 is the extension of common welding, reflective solder strip, electrically conducting transparent bar or positive and negative electrode main grid
Structure, the width of electric current collection bar is 0.5~5mm；
The cell piece is the full wafer p-type single multi- crystalline substance battery of industry internal standard, or the non-full wafer p-type single multi- electricity after burst
Pond；
(2) the positive pole flow guide bar 10 of adjacent cell is connected with negative pole flow guide bar 11 with conductive connecting strap 13, formed
Battery pack string；Or the positive pole electric current collection bar 12 of adjacent cell is collected into bar 9 with cathodal current with conductive connecting strap 13 and has been connected
Come, form battery pack string.
(3) as shown in fig. 6, by upper light transmissive material 14-1, packaging adhesive film 16, battery pack string, packaging adhesive film 16, lower printing opacity material
Expect 14-2 order lamination.
The light transmissive material is ultrawhite safety glass, transmitting organic material；
The packaging adhesive film 16 is EVA, PVB, POE etc..
(4) being stacked in laminating machine for step (3) formation is subjected to lamination treatment, crosslinks packaging adhesive film, by electricity
Pond group string and the light transmissive material of front and back are integrated into a whole.
(5) through chamfered edge, frame up, install the processes such as terminal box processing, formed available for generating electricity on two sides photovoltaic module.
Embodiment 1：
(1) it is 1.5mm's that width is made in the anode silver main gate line at the full wafer p type single crystal silicon back contacts double-side cell back side
Positive pole reflective solder strip；The negative pole reflective solder strip that width is 1.5mm is made in each row via silver electrode.Adjacent cell piece
Positive and negative electrode reflective solder strip is connected, and cell piece is connected as into battery pack string.
(2) by ultrawhite safety glass, EVA, battery pack string, EVA, the order lamination of ultrawhite safety glass.
(3) being stacked in laminating machine for step (2) formation is subjected to lamination treatment, crosslinks EVA, by battery pack string
It is integrated into a whole with front and back ultrawhite safety glass.
(4) through chamfered edge, frame up, install the processes such as terminal box processing, formed available for generating electricity on two sides photovoltaic module.
Embodiment 2：
(1) during the electrode fabrication of cell piece, back side positive pole main gate line is provided with the wide positive poles of 2mm and stretches structure, and this prolongs
Stretch structure to be located at close to the side at silicon chip edge, intersected vertically with back side positive pole main gate line；Each pore electrod that arranged passes through silver-colored grid
Line connects, silicon chip edge opposite side and form the wide negative pole extended structures of 2mm, the extended structure with cross pore electrod on
Silver grating line intersect vertically.Back side arranged relative of the positive and negative electrode extended structure in battery.
(2) tin cream is coated on the positive and negative electrode extended structure of battery, and by the positive pole extended structure and negative pole of adjacent cell
Extended structure is combined together by the wide copper strips of 3mm, forms battery pack string.
(3) by ultrawhite safety glass, PVB, battery pack string, PVB, the order lamination of ultrawhite safety glass.
(4) being stacked in laminating machine for step (2) formation is subjected to lamination treatment, crosslinks PVB, by battery pack string
It is integrated into a whole with front and back ultrawhite safety glass.
(5) through chamfered edge, frame up, install the processes such as terminal box processing, formed available for generating electricity on two sides photovoltaic module.
More than, preferred embodiment only of the present utility model, it is not limited only to practical range of the present utility model, Fan Yiben
The equivalence changes and modification that the content of utility model patent scope is done, it all should be technology category of the present utility model.
Claims (8)
1. the group string attachment structure of a kind of P-type crystal silicon back contacts double-side cell, it is characterised in that brilliant including at least two p-types
Body silicon back contacts double-side cell piece, the cell piece back side, which is intervally arranged, positive pole flow guide bar (10) and negative pole flow guide bar (11), just
The often capable just superfine grid line (7) in the back side of pole flow guide bar (10) connection, negative pole flow guide bar (11) connect multiple vias electricity of each row
Pole (8), positive pole flow guide bar (10) and negative pole flow guide bar (11) electrically insulated from one another；
The positive pole flow guide bar (10) of adjacent cell piece connects to form battery with negative pole flow guide bar (11) by conductive connecting strap (13)
Group string；Or the positive pole flow guide bar (10) of cell piece comes together in the positive electrode current of cell piece opposite side with negative pole flow guide bar (11) respectively
Collect bar (12) and cathodal current collects bar (9), form fourchette shape electrode structure, the positive pole electric current collection bar of adjacent cell piece
(12) bar (9) is collected with cathodal current to connect to form battery pack string by conductive connecting strap (13).
2. the group string attachment structure of P-type crystal silicon back contacts double-side cell according to claim 1, it is characterised in that institute
The P-type crystal silicon back contacts double-side cell piece stated is included successively by front to the back side：The thin grid line of front negative pole, front surface antireflection film
(1), front passivating film (2), n-type doping layer (3), p-type crystal silicon matrix (4), the first backside passivation film (5), the second passivating back
The just superfine grid line (7) of film (6) and the back side；The thin grid line of front negative pole of battery front side arrangement collects electronics, and by penetrating battery
The negative pole flow guide bar (11) crossed pore electrod (8) and import the back side of piece；The just superfine grid line (7) in the back side of cell backside and back side positive pole
Main gate line was distributed in the region beyond pore electrod (8), and the hole that cell backside is collected imports the positive pole flow guide bar (10) at the back side.
3. the group string attachment structure of P-type crystal silicon back contacts double-side cell according to claim 2, it is characterised in that institute
The just superfine grid line (7) in the back side stated is one or more groups of line segments being parallel to each other, and length is 10~80mm, width is 30~
300um, the spacing of adjacent rows line segment is 1~4mm；
The just superfine grid line (7) in each group of described back side is intersected with least one positive pole flow guide bar (10), single positive pole flow guide bar
(10) width is 0.5~5mm.
4. the group string attachment structure of P-type crystal silicon back contacts double-side cell according to claim 2, it is characterised in that institute
The positive pole flow guide bar (10) stated is back side positive pole main gate line or the conductive connecting strap being bonded in main gate line；Described negative pole water conservancy diversion
Bar (11) each arranged being conductively connected on pore electrod (8) to connect each negative pole main gate line arranged on pore electrod or being bonded in
Band.
5. the group string attachment structure of P-type crystal silicon back contacts double-side cell according to claim 1, it is characterised in that institute
The conductive connecting strap (13) stated is welding, reflective solder strip or electrically conducting transparent bar；The positive pole electric current collection bar (12) and negative electricity
Stream collects the extended structure that bar (9) is welding, reflective solder strip, electrically conducting transparent bar or positive and negative electrode main grid.
6. the group string attachment structure of P-type crystal silicon back contacts double-side cell according to claim 1, it is characterised in that institute
The positive pole flow guide bar (10) and negative pole flow guide bar (11) stated are parallel to each other, positive pole flow guide bar (10) and the just superfine grid line (7) in the back side
It is mutually perpendicular to.
7. the group string attachment structure of P-type crystal silicon back contacts double-side cell according to claim 1, it is characterised in that institute
The cell piece stated is full wafer p-type single multi- crystalline substance battery, or p-type single multi- battery after burst.
8. a kind of photovoltaic module of generating electricity on two sides, it is characterised in that including the P-type crystal any one of claim 1 to 7
The group string attachment structure of silicon back contacts double-side cell, photovoltaic module by front to the back side successively light transmissive material (14-1) on lamination,
Front packaging adhesive film, group string attachment structure, back side packaging adhesive film, lower light transmissive material (14-2)；In group string attachment structure, adjacent electricity
Conductive connecting strap (13) front between the piece of pond sets reflective structure (15).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720297541.4U CN206672941U (en) | 2017-03-24 | 2017-03-24 | The group string attachment structure of P-type crystal silicon back contacts double-side cell, component |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720297541.4U CN206672941U (en) | 2017-03-24 | 2017-03-24 | The group string attachment structure of P-type crystal silicon back contacts double-side cell, component |
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|---|---|
| CN206672941U true CN206672941U (en) | 2017-11-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876486A (en) * | 2017-03-24 | 2017-06-20 | 乐叶光伏科技有限公司 | The group string attachment structure of P-type crystal silicon back contacts double-side cell, component and method |
-
2017
- 2017-03-24 CN CN201720297541.4U patent/CN206672941U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876486A (en) * | 2017-03-24 | 2017-06-20 | 乐叶光伏科技有限公司 | The group string attachment structure of P-type crystal silicon back contacts double-side cell, component and method |
| CN106876486B (en) * | 2017-03-24 | 2018-11-09 | 浙江隆基乐叶光伏科技有限公司 | String formation connection structure, component and the method for P-type crystal silicon back contacts double-side cell |
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