CN206404189U - A kind of high-power semiconductor laser for non-invasive medical - Google Patents
A kind of high-power semiconductor laser for non-invasive medical Download PDFInfo
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- CN206404189U CN206404189U CN201621127578.4U CN201621127578U CN206404189U CN 206404189 U CN206404189 U CN 206404189U CN 201621127578 U CN201621127578 U CN 201621127578U CN 206404189 U CN206404189 U CN 206404189U
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- semiconductor laser
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Abstract
The utility model provides a kind of high-power semiconductor laser for non-invasive medical, and the system includes：Direct output type of semiconductor laser light source, light-beam forming unit；Wherein, the light-beam forming unit includes lens and reflecting part, the light direction of the direct output type of semiconductor laser light source is successively set on, for the laser that the light source is launched to be homogenized and expanded.The high-power semiconductor laser for non-invasive medical provided based on the utility model, can to human body without any wound in the case of, by extracorporeal irradiation, reach the purpose for the treatment of, and cost is low, therapeutic effect is good.
Description
Technical field
The utility model is related to field of semiconductor lasers, more particularly to a kind of high power semiconductor for non-invasive medical
Laser module.
Background technology
At present, the key areas that laser medicine and laser beautifying are applied as laser, develops very fast.Semiconductor
The characteristics of laser is because with small volume, lightweight, long lifespan, wide wavelength covering, is particularly suitable for use in medical and beauty treatment equipment.Partly lead
Application of the body laser in medical and beauty treatment fields mainly has depilation, tender skin, fat melting etc..
By taking fat melting as an example, fat melting scheme of the prior art mainly includes following three kinds：
The first：The laser direct irradiation fat sites of certain wavelength are used in vitro, and fat-reducing purpose is reached with this.Should
The shortcoming of scheme is that therapeutic effect is not obvious, and power is less than normal.
Second：Perform the operation internal liposuction, body fat is directly peeled off by surgical operation, fat-reducing purpose is reached.The program
Shortcoming be to have wound, recover slow, risk is higher.
The third：Ultrasonic wave fat melting, by focusing ultrasonic wave body fat layer, heating fat makes generation inside adipose tissue
Thank, so as to reach the purpose of fat-reducing.The shortcoming of the program could be realized it is necessary to have enough fat deposit thickness, meanwhile, gather
Burnt depth is not easy to control, and the indifference heating carried out to adipose tissue has the risk of injured nerve.
In view of the deficiency of such scheme, in the urgent need to a kind of hurtless measure and the significant laser medicine method of effect.
The content of the invention
In view of this, the purpose of this utility model essentially consists in a kind of high power semiconductor for non-invasive medical of offer and swashed
The characteristics of light device module, module, is realized based on direct output type of semiconductor laser, that is to say, that the utility model technology
Scheme is that the laser gone out based on semiconductor laser is passed through after shaping, direct irradiation region to be treated, to carry out correlation
Non-invasive therapy.The technical scheme provided by the utility model, can to human body without any wound in the case of, pass through body
External exposure, reaches the purpose for the treatment of, and cost is low, and therapeutic effect is good.
The technical solution of the utility model is as follows：
The utility model provides a kind of high-power semiconductor laser for non-invasive medical, it is characterised in that institute
Stating module includes：Direct output type of semiconductor laser light source, light-beam forming unit；Wherein, the light-beam forming unit includes
Lens and reflecting part, are successively set on the light direction of the direct output type of semiconductor laser light source, for institute
The laser that light source launches is stated to be homogenized and expanded.
In such scheme, the module also includes sealing device, for sealing and supporting the semiconductor laser module.
In such scheme, the direct output type of semiconductor laser light source is：Single bar semiconductor laser, single tube are partly led
Body laser.
In such scheme, the quantity of the lens is one or more.
In such scheme, the reflecting part is：Reflector or reflection shield.
In such scheme, the module also includes refrigerating plant, and the refrigerating plant is liquid refrigerating type, for be described
Semiconductor laser radiates.
In such scheme, the sealing device is hollow shell component, and is provided with light-emitting window, and the light-emitting window is used for will
It is described homogenize and expand after laser, region to be treated is acted in the way of extracorporeal irradiation.
Technical scheme disclosed in the utility model, as light source, is made full use of using direct output type of semiconductor laser
The characteristics of semiconductor laser divergence angle is big, realizes non-invasive therapy in the way of large area hot spot irradiates in vitro.By this reality
With new provided technical scheme, very good therapeutic effect can be reached in the case where human body is without any wound, into
Work(realizes non-invasive medical, and from cost for, scheme solution of the utility model based on direct output type of semiconductor laser
The problem of traditional fiber of having determined coupling class scheme cost is high.
Brief description of the drawings
Fig. 1 is that the utility model is used for the high-power semiconductor laser structure composition schematic diagram of non-invasive medical；
Fig. 2 is that the utility model is used for the high-power semiconductor laser structure connection diagram of non-invasive medical.
Drawing reference numeral explanation：1 is direct output type of semiconductor laser light source, and 2 be lens, and 3 be reflecting part, and 4 be system
Device for cooling, 5 be sealing device, and 6 be fixed screw.
Embodiment
In the utility model embodiment, by providing a kind of high-power semiconductor laser for non-invasive medical,
Can to human body without any wound in the case of, reach significant therapeutic effect.Medical treatment described in the utility model can be wrapped
Include but be not limited to fat melting, tender skin etc., the utility model embodiment is illustrated by taking noninvasive fat melting as an example.
Principle of the present utility model is：Selection wavelength is 700nm-1550nm, especially 1064nm semiconductor laser
（Adipose tissue is optimal to the assimilation effect of the wavelength laser, if its hetero-organization, then selects corresponding with the tissue resorption wavelength
Semiconductor laser）, using semiconductor laser divergence angle it is big the characteristics of, by way of large area hot spot irradiates, interval
Property irradiate the adipose tissue of human body so that the adipose tissue reaches its emulsifying temperature, and the adipose tissue is in its emulsification temperature
Degree is lower to be decomposed, and be further absorbed by the body excretion, reaches the effect of noninvasive fat melting.
Fig. 1 is that the utility model is used for the high-power semiconductor laser structure composition schematic diagram of non-invasive medical, Fig. 2
It is used for the high-power semiconductor laser structure connection diagram of non-invasive medical for the utility model.It is straight in the present embodiment
It can be single bar semiconductor laser, single-tube semiconductor laser to connect output type of semiconductor laser light source, or other
The semiconductor laser of type, as shown in figure 1, the high-power semiconductor laser mainly includes：Direct output type half
Conductor laser light source 1, light-beam forming unit；Specifically, the light-beam forming unit includes lens 2 and reflecting part 3, according to
The secondary light direction for being arranged on the direct output type of semiconductor laser light source 1, for the laser launched the light source
Homogenized and expanded, the reflecting part 3 and lens 2 are secured together by fixed screw 6, set on the reflecting part
Screw is equipped with, together with the reflecting part 3 is affixed to sealing device 5.It should be noted that the lens
Quantity can be one or more, can specifically determine according to the actual requirements, the reflecting part can include but is not limited to：It is reflective
Cover, reflector etc. can be expanded and homogenized Optical devices to laser beam.
Further, the module can also include sealing device 5, and the sealing device, which is mainly used in sealing, described partly leads
Body laser module.
Specifically, the sealing device 5 is hollow shell component, and is provided with light-emitting window, the light-emitting window is used for institute
The laser after homogenizing and expanding is stated, region to be treated is acted in the way of extracorporeal irradiation.In practice, can according to demand,
The sealing device is manufactured into variously-shaped.It should be noted that in noninvasive fat melting embodiment, the semiconductor laser
The wavelength for launching light beam is preferably 1064nm.
Further, the module can also include refrigerating plant 4, and the refrigerating plant can be liquid refrigerating type refrigeration
Device, is mainly used in radiating for the semiconductor laser, to ensure that the semiconductor laser being capable of normal continuous sex work.
Described above, preferred embodiment only of the present utility model is not intended to limit protection of the present utility model
Scope.For those skilled in the art, the utility model can have various modifications and variations.It is all of the present utility model
Any modification, equivalent substitution and improvements for being done etc. within spirit and principle, should be included in protection domain of the present utility model it
It is interior.
Claims (7)
1. a kind of high-power semiconductor laser for non-invasive medical, it is characterised in that the module includes：It is directly defeated
Go out type semiconductor laser light source, light-beam forming unit；Wherein, the light-beam forming unit includes lens and reflecting part,
The light direction of the direct output type of semiconductor laser light source is successively set on, for the laser launched the light source
Homogenized and expanded.
2. semiconductor laser module according to claim 1, it is characterised in that the module also includes sealing device,
For sealing and supporting the semiconductor laser module.
3. semiconductor laser module according to claim 1, it is characterised in that the direct output type of semiconductor laser
Device light source is：Single bar semiconductor laser, single-tube semiconductor laser.
4. semiconductor laser module according to claim 1, it is characterised in that the quantity of the lens is one or many
It is individual.
5. semiconductor laser module according to claim 1, it is characterised in that the reflecting part is：Reflector or
Reflection shield.
6. semiconductor laser module according to claim 1, it is characterised in that the module also includes refrigerating plant,
The refrigerating plant is liquid refrigerating type, for being radiated for the semiconductor laser.
7. semiconductor laser module according to claim 2, it is characterised in that the sealing device is hollow shelly portion
Part, and be provided with light-emitting window, the light-emitting window be used for by it is described homogenize and expand after laser, acted in the way of extracorporeal irradiation
In region to be treated.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621127578.4U CN206404189U (en) | 2016-10-17 | 2016-10-17 | A kind of high-power semiconductor laser for non-invasive medical |
| RU2019113825A RU2723337C1 (en) | 2016-10-17 | 2017-09-28 | Semiconductor laser module and method of use thereof for non-invasive treatment |
| KR1020197014164A KR102293502B1 (en) | 2016-10-17 | 2017-09-28 | Semiconductor laser modules and non-invasive medical methods |
| EP17863036.4A EP3527260B1 (en) | 2016-10-17 | 2017-09-28 | Semiconductor laser module for application in noninvasive medical treatment |
| US16/341,937 US20190239951A1 (en) | 2016-10-17 | 2017-09-28 | Semiconductor laser module and method for application in noninvasive medical treatment |
| CN201780002184.7A CN108348766B (en) | 2016-10-17 | 2017-09-28 | A kind of semiconductor laser module and the method for non-invasive medical |
| PCT/CN2017/104023 WO2018072610A1 (en) | 2016-10-17 | 2017-09-28 | Semiconductor laser module and method for application in noninvasive medical treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621127578.4U CN206404189U (en) | 2016-10-17 | 2016-10-17 | A kind of high-power semiconductor laser for non-invasive medical |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206404189U true CN206404189U (en) | 2017-08-15 |
Family
ID=59548777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621127578.4U Active CN206404189U (en) | 2016-10-17 | 2016-10-17 | A kind of high-power semiconductor laser for non-invasive medical |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206404189U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106621068A (en) * | 2016-10-17 | 2017-05-10 | 镭蒙（苏州）微光学科技有限公司 | Semiconductor laser module and method for noninvasive medical treatment |
| WO2018072610A1 (en) * | 2016-10-17 | 2018-04-26 | 西安炬光科技股份有限公司 | Semiconductor laser module and method for application in noninvasive medical treatment |
| CN108283521A (en) * | 2017-11-29 | 2018-07-17 | 北京华夏光谷光电科技有限公司 | Melt the compound Bariatric device of fat in a kind of laser body surface cause sound/laser abdomen |
-
2016
- 2016-10-17 CN CN201621127578.4U patent/CN206404189U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106621068A (en) * | 2016-10-17 | 2017-05-10 | 镭蒙（苏州）微光学科技有限公司 | Semiconductor laser module and method for noninvasive medical treatment |
| WO2018072610A1 (en) * | 2016-10-17 | 2018-04-26 | 西安炬光科技股份有限公司 | Semiconductor laser module and method for application in noninvasive medical treatment |
| CN108283521A (en) * | 2017-11-29 | 2018-07-17 | 北京华夏光谷光电科技有限公司 | Melt the compound Bariatric device of fat in a kind of laser body surface cause sound/laser abdomen |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170825 Address after: 710077 Xi'an province hi tech Zone, Shaanxi Zhang Road No. 86, No. 56 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: The river Wuzhong Economic Development Zone Suzhou Street Wuzhong road in Suzhou city of Jiangsu Province in 215104 2888, building 6, room 515 D513 Patentee before: Laser technology (Suzhou) Co., Ltd. |