CN206331228U - A kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams - Google Patents
A kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams Download PDFInfo
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- CN206331228U CN206331228U CN201621161479.8U CN201621161479U CN206331228U CN 206331228 U CN206331228 U CN 206331228U CN 201621161479 U CN201621161479 U CN 201621161479U CN 206331228 U CN206331228 U CN 206331228U
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Abstract
The utility model discloses a kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams.The device includes He Cd lasers, electro-optical shutter, short focal length lens, long-focus lens, beam splitter, plane mirror A, plane mirror B, photoresist sample and rotary sample control system.The laser beam that He Cd lasers are sent is through electro-optical shutter, short focal length lens, long-focus lens, after beam splitter, as the equal laser beam of two beam intensities, and irradiation photoresist sample is exposed after being reflected respectively by plane mirror A, plane mirror B.Exposed by the rotation to photoresist sample and multiple two-beam interference, and to swashing the selection of device wavelength, it can inscribe and prepare one-dimensional grating, two-dimensional lattice, with one heart hexagon, annulus and the in length and breadth various micro-nano structures such as cycle different two-dimensional rectangle dot matrix at equal intervals.The utility model has advantage simple in construction, with low cost, has extensive use in micro-nano structure manufacture field.
Description
Technical field
The utility model belongs to laser interference and inscribes micro-nano structure technical field, is related to a kind of laser interference and inscribes micro-nano knot
The device of structure, more particularly to a kind of device that micro-nano structure is inscribed based on rotary sample and double laser beams interference.
Background technology
Micro-nano structure has important application in fields such as photonic crystal, diffraction grating, biology sensors.Currently with laser
It is mostly to inscribe One Dimension Periodic optical grating construction either in sample surfaces interference by two beam laser that micro-nano structure is inscribed in interference
Complicated two-dimensional periodic structure is inscribed using multiple laser interference.
The shortcoming that existing laser interference photolithography technology is present is mainly：1）The micro-nano that can be inscribed using two beam laser interferences
Structure is only limitted to One Dimension Periodic grating, and this undoubtedly limits the extensive use of photolithographic structures.2）Inscribed using multiple-beam interference
Light path needed for complicated two-dimensional periodicity optical structure is complicated, expensive, and is not easy to operation.
The content of the invention
The purpose of this utility model is to provide a kind of micro-nano structure interfered based on rotary sample and double laser beams and inscribed
Device, has carried out technological improvement, it is achieved thereby that a variety of one to the method and apparatus that the dry side of existing laser relates to inscription micro-nano structure
The inscription of the micro-nano structure of dimension or two dimension, reduces photoetching cost and operation difficulty.
To achieve the above object, the technical scheme that the utility model is used is：One kind is double based on rotary sample and laser
The micro-nano structure Written Device of beam interference, including He-Cd lasers, electro-optical shutter, short focal length lens, long-focus lens, point
Beam device, plane mirror A, plane mirror B, photoresist sample, rotary sample control system：Described electro-optical shutter is control
Laser beam whether exposed sample and the switch of time for exposure, project electro-optical shutter light successively by short focal length lens, focal length
It is divided into strong and phase all same the coherent light of two-beam away from being expanded after lens, then by beam splitter, and goes out along different directions
Penetrate, irradiate and it is exposed after being reflected finally by plane mirror A, plane mirror B on photoresist sample, pass through control
Sample preparation product Rotable Control System realizes the rotation to photoresist sample different modes, and then carries out different modes to photoresist sample
Exposure, can obtain corresponding micro-nano structure after developed, fixing processing；
Described He-Cd lasers inscribe light source as exposure, and its laser launched can be the two of 325nm and 442nm
Switch between kind wavelength, and position is completely constant between the laser launched before and after switching.
Described electro-optical shutter is used for the time for controlling whether to expose and exposing；In use, the open and close of adjustment electro-optical shutter
State, with determine laser beam whether exposed sample and time for exposure.
Described short focal length lens, long-focus lens, for being expanded to laser beam, to realize that large area exposure is inscribed.
Incident laser beam is divided into two beam intensity identical coherent lights by described beam splitter, and then directive plane is anti-respectively
Penetrate mirror A, plane mirror B.
The two beam laser beams projected through beam splitter, are reflexed to photoresist by described plane mirror A, plane mirror B
On sample, so as to be exposed inscription to photoresist sample；Swash in use, two beams can be changed by the position of two level crossings of change
The angle of light.
Described photoresist sample is placed in rotary sample control system, and control system can control rotary sample a certain
Special angle or continuous any rotation；During exposed sample, He-Cd lasers and electro-optical shutter are opened, selection exposure
Optical maser wavelength, the laser beam from electro-optical shutter outgoing is successively by short focal length lens, long-focus lens and beam splitter, then through plane
Mirror A and level crossing B are reflexed to be exposed on photoresist sample to it；Meanwhile, can be by controlling what He-Cd lasers were launched
The on off state and rotary sample control system of optical maser wavelength and electro-optical shutter with realize the rotation to sample different modes expose
Photoetching is write, and finally obtains corresponding micro-nano structure.
The utility model micro-nano structure Written Device has the following advantages that：
1）Interfered based on rotary sample and double laser beams, exposed by multiple rotary sample exposure or continuous rotary sample
Light, can inscribe and prepare one-dimensional grating, two-dimensional lattice, hexagon, concentric a variety of micro-nano structures such as annulus at equal intervals.
2）Interfered based on rotary sample and double laser beams, large area can be achieved and inscribes, and is carved compared to multiple-beam interference
Write device, light path is simple, it is easy to operate, and reduces photoetching cost.
3）The laser beam for launching two kinds of wavelength of 325nm and 442nm using He-Cd lasers is exposed to photoresist sample
Inscription can obtain transverse and longitudinal cycle different rectangular sampling lattice, such as rectangular lattice, trapezoidal dot matrix etc..
Brief description of the drawings
Fig. 1 is the structural representation of this micro-nano structure Written Device interfered based on rotary sample and double laser beams.
Fig. 2 is the cartesian coordinate system set up by the origin of coordinates of sample surfaces geometric centerxozLight path in plane
Schematic diagram,zAxle perpendicular to photoresist sample surfaces,xDirection of principal axis is horizontally oriented.
Fig. 3 is to inscribe the one-dimensional grating structure once obtained to sample exposure with 325nm laser beam.
Fig. 4 is 90 ° of rotary sample and again exposed sample same time with 325nm laser beam after first time exposes
The cycle lattice structure such as available two dimension.
Fig. 5 is the laser beam lithography sample three times with 325nm, and rotary sample twice, rotates after exposure same time every time
60 °, obtained hexagonal lattice structure.
Fig. 6 is the laser beam with 325nm, allows sample continuous exposure to rotate justifying at equal intervals with one heart of being obtained under conditions of 180 °
Ring structure.
Fig. 7 be first with 325nm laser beam lithography sample once after, then switched laser device wavelength uses 442nm laser
Beam exposes the different rectangular sampling lattice of available transverse and longitudinal cycle after same time.
In Fig. 1：1. He-Cd lasers, 2. electro-optical shutters, 3. short focal length lenses, 4. long-focus lens, 5. beam splitters, 6.
Plane mirror A, 7. plane mirror B, 8. photoresist samples, 9. rotary sample control systems.
In Fig. 2：The wave vector of laser beam 1 is represented,The wave vector of laser beam 2 is represented,θRepresent the incidence angle of laser beam.
Embodiment
The utility model is described in detail with reference to the accompanying drawings and detailed description.
As shown in figure 1, a kind of micro-nano structure interfered based on rotary sample and double laser beams of the utility model inscribes dress
Put, including He-Cd lasers 1, electro-optical shutter 2, short focal length lens 3, long-focus lens 4, beam splitter 5, plane mirror A 6,
Plane mirror B 7, photoresist sample 8, rotary sample control system 9, wherein：
He-Cd lasers 1 can be used as exposure light by switching, launch wavelength for 325nm and 442nm two kinds of laser beams
The laser beam space position sent before and after source, and switching is identical.
Electro-optical shutter 2 be used for control laser beam whether exposure photo-etching glue sample 8, and exposure photo-etching glue sample 8 time,
The on off state of electro-optical shutter 2 is adjusted to realize the exposure to photoresist sample 8 and the control of time.
Short focal length lens 3, long-focus lens 4 are combined to be expanded to the laser beam that He-Cd lasers 1 are launched, to realize
Large area is inscribed.
Incident laser beam can be divided into the equal coherent light of two beam intensities by beam splitter 5, be projected along two different directions.
The two beam laser beams projected through beam splitter 5 are reflexed to photoresist sample by plane mirror A 6, plane mirror B 7
On product 8, interfered with certain angle, realize that exposure is inscribed.
Photoresist sample 8 is placed in rotary sample control system 9, the control photoresist of rotary sample control system 9 sample 8
Rotation, photoresist sample 8 can be made to rotate a certain special angle or continuous any rotation.With reference to specific embodiment
It is further described：
Embodiment 1
A kind of structure of micro-nano structure Written Device interfered based on rotary sample and double laser beams shown in reference picture 1
Schematic diagram, the laser beam that the selection transmitted wave of He-Cd lasing light emitters 1 is 325nm, opens electro-optical shutter 2, laser beam passes through electro-optical shutter
After 2, successively expanded after short focal length lens 3, long-focus lens 4, then by beam splitter 5 points be concerned with for two beam intensity identicals
Light is projected from both direction, is finally reflexed to and it is exposed by plane mirror A6, plane mirror B7 on photoresist sample 8
Light, incidence angleθ=10 °, expose after certain time, through the technique such as follow-up development, fixing, you can obtain One Dimension Periodic grating knot
Structure.As shown in Figure 3.
Embodiment 2
A kind of structure of micro-nano structure Written Device interfered based on rotary sample and double laser beams shown in reference picture 1
Schematic diagram, after 325nm laser beam first time exposed sample certain time, closes electro-optical shutter 2, passes through rotary sample system
9 are rotated by 90 ° photoresist sample 8, open electro-optical shutter 2 again afterwards, again the same time of exposure photo-etching glue sample 8T, other steps
Rapid reference embodiment 1, the micro-nano structure finally obtained is two-dimensional and periodic lattice structure, as shown in Figure 4.
Embodiment 3
A kind of structure of micro-nano structure Written Device interfered based on rotary sample and double laser beams shown in reference picture 1
Schematic diagram, exposure photo-etching glue sample 8 three times closes electro-optical shutter 2, and pass through rotary sample control after exposure same time every time
Device 9 makes photoresist sample 8 rotate 60 °, and other steps can obtain hexagonal lattice structure, as shown in Figure 5 with reference to embodiment 1.
Embodiment 4
The apparatus structure signal that micro-nano structure is inscribed based on rotary sample and double laser beams interference shown in reference picture 1
Figure, it is opening to keep He-Cd lasers 1 and electro-optical shutter 2, and Rotation Controllers 9 makes photoresist sample 8 with a fixed angular speedω 0At the uniform velocity rotate, rotate through closing electro-optical shutter 2 after 180 °, stop exposure, other steps can obtain same with reference to embodiment 1
Heart circular ring structure at equal intervals, as shown in Figure 6.
Embodiment 5
A kind of structure of micro-nano structure Written Device interfered based on rotary sample and double laser beams shown in reference picture 1
Schematic diagram, after 325nm laser beam first time exposed sample certain time, closes electro-optical shutter 2, He-Cd lasers is sent out
The optical maser wavelength penetrated is switched to 442nm, is rotated by 90 ° photoresist sample 8 by rotary sample control system 9, then beats again
Open the light electroshutter 2, the same time of exposure photo-etching glue sample 8T, other steps can obtain the transverse and longitudinal cycle different with reference to embodiment 1
Two-dimensional and periodic rectangular lattice, as shown in Figure 7.
Illustrate that the utility model micro-nano structure is carved with plane light wave principle of interference combination coordinates matrix transformation theory below
The principle of write device：
Fig. 2 is the cartesian coordinate system set up by the origin of coordinates of the center of photoresist sample 8xyz'sxozIn plane
Light path schematic diagram, photoresist is incided which show two beam coherent lights after plane mirror A 6, plane mirror B 7
Interfere on sample 8, the incidence angle of two laser isθ.Under ideal conditions, two beam coherent light waveses can be considered plane wave, they
Electric vectorWithIt can be expressed as：
In two formulasWithRepresent amplitude,WithThe wave vector of two beam laser beams is represented respectively,WithTwo are represented respectively
The position vector of laser beam,ωThe angular frequency of light is represented,tThe expression time, due to the first phase of two-beamWithIt is identical, therefore,
0 can be set to for convenience of calculating.The plane of exposure of photoresist sample 8 is in Fig. 2xoyPlane, two beam laser verticalsyAxle incides photoetching
The surface of glue sample 8, in this case, two beam laser existxElectricity vector components on axle can be write as：
During this two beams laser beam interference, periodic interference optical field distribution is axially formed, total intensity can be expressed as：
Due to the photosensitive property of photoresist, it is possible to use light intensityIRepresent the micro-nano structure inscribed out.Light intensityIIt is proportional to
Electric-field intensity squareE 2, due to only studying the characteristic of spatial distribution of light intensity here, total light intensity expression is expressed as：
In formula,λFor laser beam wavelength, for convenience of calculating, it can setI 1WithI 2It is 1（I 1= I 2=1）, therefore（6）Shi Kejian
Turn to：
Therefore, the cycle of the light distribution of this two beams laser interference formationFor：
Based on above-mentioned two beams laser beam the Surface Interference of photoresist sample 8 light distribution derive, photoresist sample 8 with
Under conditions of the mode of multiple rotary exposure exposes, with coordinates matrix transformation theory, it can obtain rotating through after certain angle
Light distribution on the surface of photoresist sample 8, it is assumed thatI nRepresentnSecondary exposure,It isnRotary sample controller during secondary exposure
9 make the total angle that photoresist sample 8 is turned over, then conversion is as follows up to formula：
Therefore,NAfter secondary exposure, total light distribution can be expressed as：
Photoresist sample 8 continuously rotation exposure under conditions of, can set photoresist sample 8 rotation angular speed asω 0, then
Have, so with reference to（9）Formula, a certain momenttLight distribution can be written as：
If the rotation exposure a period of time of photoresist sample 8TAfterwards, then light distribution total on photoresist sample 8 can be written as：
A kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams of the utility model, based on sample
Rotation and double laser beams interference, can realize the inscription of a variety of periodicity micro-nano structures.Such as exposure photo-etching glue sample 8 three
Secondary, control rotary sample control system 9 makes 60 ° of photoresist rotary sample after exposure every time, can inscribe out hexagonal lattice knot
Structure；Continuous rotation exposure photo-etching glue sample 8, after photoresist sample 8 rotates through 180 °, can inscribe out with one heart annulus at equal intervals
Structure.Inscribed compared to other multi-beam lasers, present apparatus light channel structure is simple, easy to operate, and light is reduced to a certain extent
This is carved into, therefore is with a wide range of applications in the preparation field of micro-nano structure.
Claims (9)
1. a kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams, it is characterised in that including He-Cd
Laser（1）, electro-optical shutter（2）, short focal length lens（3）, long-focus lens（4）, beam splitter（5）, plane mirror A（6）, it is flat
Face speculum B（7）, photoresist sample（8）, rotary sample control system（9）：
Described electro-optical shutter（2）Be control laser beam whether exposed sample and the switch of time for exposure, project electro-optical shutter
（2）Light successively pass through short focal length lens（3）, long-focus lens（4）Expanded afterwards, then by beam splitter（5）It is divided into two beams
The coherent light of light intensity and phase all same, and along different directions outgoing, finally by plane mirror A（6）, plane mirror B
（7）Photoresist sample is arrived in irradiation after reflection（8）On it is exposed, by controlling rotary sample control system（9）Realization pair
Photoresist sample（8）The rotation of different modes, and then to photoresist sample（8）The exposure of different modes is carried out, it is developed, fixing
Corresponding micro-nano structure is can obtain after processing.
2. a kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams according to claim 1,
Characterized in that, described He-Cd lasers（1）As exposure light source, its laser beam launched can be in 325nm and 442nm
Two kinds of different wave lengths between switch, and switching before and after transmitting laser beam locus it is completely constant.
3. a kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams according to claim 1,
Characterized in that, being expanded to laser beam by the different short focal length lens of two focal lengths（3）, long-focus lens（4）Realize, so that
He-Cd lasers（1）The laser beam sent is expanded after by them, realizes that large area is inscribed.
4. a kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams according to claim 1,
Characterized in that, described beam splitter（5）It is from short focal length lens（3）, long-focus lens（4）The laser beam of injection is divided into phase
Position and two beam laser of light intensity all same, directive plane mirror A is distinguished during injection along both direction（6）, plane mirror B
（7）On.
5. a kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams according to claim 1,
Characterized in that, from beam splitter（5）The two beam identical laser beams projected are by plane mirror A（6）, plane mirror B（7）Instead
It is mapped to photoresist sample（8）On, adjust plane mirror A（6）, plane mirror B（7）Position can change two beam laser beams
Incidence angle, and then inscribe different cycles micro-nano structure.
6. a kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams according to claim 1,
Characterized in that, photoresist sample（8）It is placed on rotary sample control system（9）On, in rotary sample control system（9）Control
Under system, photoresist sample（8）A certain special angle or continuous any rotation can be rotated around its center line.
7. a kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams according to claim 1,
Characterized in that, photoresist sample（8）A certain special angle can be rotated around its center line, to photoresist sample（8）Exposure one
It is secondary to can obtain One Dimension Periodic grating；To photoresist sample（8）Exposure twice, and is exposing preceding rotation photoresist sample for the second time
（8）90 °, obtain two-dimensional and periodic lattice structure；To photoresist sample（8）Exposure three times, rotates photoresist sample after exposure every time
Product（8）60 °, obtain hexagonal lattice structure.
8. a kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams according to claim 1,
Characterized in that, photoresist sample（8）Can be around the continuous any rotation of its center line, by controlling rotary sample control system
System（9）Make photoresist sample（8）With a fixed angular speedω 0At the uniform velocity rotation exposure, after 180 ° of rotation, obtains with one heart annulus at equal intervals
Structure.
9. a kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams according to claim 1,
Characterized in that, the wavelength by changing the laser beam that He-Cd lasers are launched, exposure photo-etching glue sample（8）Twice, for the first time
With 325nm laser beam, then rotate photoresist sample（8）90 °, when identical using 442nm second of exposed sample of laser beam
Between, it can obtain cycle different two-dimensional rectangle lattice structure in length and breadth.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621161479.8U CN206331228U (en) | 2016-11-01 | 2016-11-01 | A kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams |
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| CN201621161479.8U CN206331228U (en) | 2016-11-01 | 2016-11-01 | A kind of micro-nano structure Written Device interfered based on rotary sample and double laser beams |
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| CN206331228U true CN206331228U (en) | 2017-07-14 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106444297A (en) * | 2016-11-01 | 2017-02-22 | 兰州理工大学 | Micro-nano structure inscribing device based on sample rotation and laser double-beam interference |
| CN117233899A (en) * | 2023-11-14 | 2023-12-15 | 清华大学 | Optical path adjusting device and interference lithography equipment |
-
2016
- 2016-11-01 CN CN201621161479.8U patent/CN206331228U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106444297A (en) * | 2016-11-01 | 2017-02-22 | 兰州理工大学 | Micro-nano structure inscribing device based on sample rotation and laser double-beam interference |
| CN106444297B (en) * | 2016-11-01 | 2019-02-22 | 兰州理工大学 | A kind of micro-nano structure Written Device interfered based on sample rotates and double laser beams |
| CN117233899A (en) * | 2023-11-14 | 2023-12-15 | 清华大学 | Optical path adjusting device and interference lithography equipment |
| CN117233899B (en) * | 2023-11-14 | 2024-01-30 | 清华大学 | Optical path adjusting device and interference lithography equipment |
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