CN205940475U - Dark measuring device of magnetron sputtering flat target sculpture - Google Patents
Dark measuring device of magnetron sputtering flat target sculpture Download PDFInfo
- Publication number
- CN205940475U CN205940475U CN201620754921.1U CN201620754921U CN205940475U CN 205940475 U CN205940475 U CN 205940475U CN 201620754921 U CN201620754921 U CN 201620754921U CN 205940475 U CN205940475 U CN 205940475U
- Authority
- CN
- China
- Prior art keywords
- motor
- target
- magnetron sputtering
- light source
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 10
- 238000005259 measurement Methods 0.000 claims abstract description 13
- 238000004891 communication Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 15
- 239000000523 sample Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000002860 competitive effect Effects 0.000 abstract description 2
- 230000006698 induction Effects 0.000 abstract 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Abstract
The utility model provides a dark measuring device of magnetron sputtering flat target sculpture, is including two support rail that arrange in on the target and be parallel to each other, support rail is last respectively to be equipped with a horizontal support rod, and two horizontal support rod's upper end is connected through supporting the horizontal pole, is equipped with the motor on one of them horizontal support rod no. I, supporting the horizontal pole middle part and being equipped with the motor no. II, external computer is connected through communication cable in no. II motors upper ends, and no. II motor lower extremes are connected with the photosensitive induction scale through middle branch, photosensitive induction scale inboard is equipped with the pulsed laser light source, and the pulsed laser light source outside is equipped with scalable accuracy of measurement. The utility model discloses can be accurate measure the target surface degree of depth of sculpture to calculating the thickness of surplus target, and then drawing the life of surplus target, and further improve the utilization ratio of target, reduction in production cost improves the competitive advantage of product on market.
Description
Technical field
This utility model is related to a kind of magnetron sputtering flat target etching depth measurement apparatus.
Background technology
Magnetron sputtering apparatus to be used in thin-film solar cells production, the target that magnetron sputtering apparatus adopt mainly has rotation
Turn target and planar targets, rotary target material integrally sputters uniformly, and the etching groove of annular after planar targets sputtering, can be formed.When flat
When face target consumes to a certain extent, the residual thickness of target need to be measured, to assess the residual life of target, maximum journey
The utilization target of degree is to reduce production cost.The method adopting at present mainly has two kinds：One kind is to be measured using snap gauge,
Another kind is to be measured using thickness of slab micrometer.
The both metering systems adopting at present are all the thickness using survey tool direct measurement residue target, people to be leaned on
Work alignment and perusal, so the accuracy of its measurement is not enough, measurement result can only only for reference accurately remain it is impossible to be given
Remaining its thickness, also cannot calculate the service life of remaining target, for the safety of target, will necessarily waste a part of target
Material.
Utility model content
Its purpose of this utility model is that a kind of magnetron sputtering flat target etching depth measurement apparatus of offer, solves mesh
Pre-test residue its thickness, manually align and perusal, and the accuracy deficiency of its measurement accurately remains it is impossible to be given
Remaining its thickness, also cannot calculate the service life of remaining target, and the big problem of waste of material.
The technical scheme realized above-mentioned purpose and take, including two supporting tracks being placed on target and be parallel to each other,
A piece vertical support bar is respectively provided with described supporting track, the upper end of two vertical support bar connects through support rail, wherein one
Root vertical support bar is provided with No. I motor, and described support rail middle part is provided with No. II motor, and No. II motor upper end is through communication
The external computer of cable connection, No. II motor lower end is connected with light-inductive scale through middle support rod, in described light-inductive scale
Side is provided with pulsed laser light source, is provided with scalable measuring probe outside pulsed laser light source.
Beneficial effect
Compared with prior art this utility model has advantages below.
This utility model can accurately measure the service life drawing remaining target, instructs process optimization direction, improves
The utilization rate of target, reduces production cost, improves product competitive advantage commercially.
Brief description
The utility model is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 is structural representation of the present utility model；
Fig. 2 is target structural representation in this utility model；
Fig. 3 is target sectional view in this utility model；
Fig. 4 is light-inductive scale operating diagram in this utility model.
Specific embodiment
This device includes two supporting tracks 1 being placed on target 12 and being parallel to each other, as shown in Figure 1, Figure 2, Fig. 3, Fig. 4 institute
Show, described supporting track 1 is respectively provided with a vertical support bar 2, and the upper end of two vertical support bar 2 connects through support rail 4,
Wherein one vertical support bar 2 is provided with No. I motor 11, and described support rail 4 middle part is provided with No. II motor 3, No. II electricity
Machine 3 upper end connects external computer 6 through communication cable 5, and No. II motor 3 lower end is connected with light-inductive scale 8 through middle support rod 7,
It is provided with pulsed laser light source 9 inside described light-inductive scale 8, outside pulsed laser light source 9, be provided with scalable measuring probe 10.
Described vertical support bar 2 is controlled by No. I motor 11, can on supporting track 1 transverse shifting.
Described middle support rod 7 is controlled by No. II motor 3, can vertically move on support rail 4.
Operation principle
, using the metering system similar to " blind person climbs the mountain " Mathematics Optimization Method, first exploring next step will for this utility model
The position of measurement, progressively measures etching depth and the etching trace on planar targets 12 surface, and measurement apparatus are passed through supporting rail
Road 1 is placed on planar targets 12, moves vertical support bar 2 and middle support rod 7 by controlling No. I motor 11 and No. II motor 3,
Scalable measuring probe 10 is made to reach impact point position to be measured, system starts, pulsed laser light source 9 sends every 1ms
Beam of laser, laser gets to back reflection on target 12 surface, is sensed by the annular light-inductive scale 8 for 1mm for the radius, light
Sensitivity answers scale 8 to sense that the point of light ranks for impact point position at the latest, and corresponding optical signal is transferred to by communication cable 5
External computer 6, external computer 6 needs the displacement of operation by calculating vertical support bar 2 and middle support rod 7, controls No. I electricity
Machine 11 and No. II motor 3 are started working, and make scalable measuring probe 10 reach impact point position, scalable measuring probe 10 work is surveyed
Etching groove 13 etching depth of amount impact point position.System so circulates work, you can measure the etching on whole flat target surface
Groove 13 etching trace and the etching depth of each point of etching trace.
Claims (3)
1. a kind of magnetron sputtering flat target etching depth measurement apparatus, including being placed in target（12）Two going up and being parallel to each other
Support track（1）It is characterised in that described supporting track（1）On be respectively provided with a vertical support bar（2）, two vertical support bar
（2）Upper end through support rail（4）Connect, wherein one vertical support bar（2）It is provided with No. I motor（11）, described support horizontal stroke
Bar（4）Middle part is provided with No. II motor（3）, No. II motor（3）Upper end is through communication cable（5）Connect external computer（6）, No. II
Motor（3）Lower end is through middle support rod（7）It is connected with light-inductive scale（8）, described light-inductive scale（8）Inner side is provided with pulse
LASER Light Source（9）, pulsed laser light source（9）Outside is provided with scalable measuring probe（10）.
2. a kind of magnetron sputtering flat target etching depth measurement apparatus according to claim 1 are it is characterised in that described hang down
Support bars（2）By No. I motor（11）Control, can be in supporting track（1）Upper transverse shifting.
3. a kind of magnetron sputtering flat target etching depth measurement apparatus according to claim 1 are it is characterised in that in described
Between pole（7）By No. II motor（3）Control, can be in support rail（4）On vertically move.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620754921.1U CN205940475U (en) | 2016-07-19 | 2016-07-19 | Dark measuring device of magnetron sputtering flat target sculpture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620754921.1U CN205940475U (en) | 2016-07-19 | 2016-07-19 | Dark measuring device of magnetron sputtering flat target sculpture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205940475U true CN205940475U (en) | 2017-02-08 |
Family
ID=57929338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620754921.1U Active CN205940475U (en) | 2016-07-19 | 2016-07-19 | Dark measuring device of magnetron sputtering flat target sculpture |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205940475U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172507A (en) * | 2020-03-05 | 2020-05-19 | 东莞南玻工程玻璃有限公司 | Planar target burn through alarm system |
-
2016
- 2016-07-19 CN CN201620754921.1U patent/CN205940475U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172507A (en) * | 2020-03-05 | 2020-05-19 | 东莞南玻工程玻璃有限公司 | Planar target burn through alarm system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110954026B (en) | On-line detection device for measuring geometric profile of steel rail | |
| CN101685005B (en) | Machine for measuring outline dimension of vehicle | |
| CN203396366U (en) | Large span steel rail gauge measuring apparatus | |
| CN201522275U (en) | Three-dimensional laser section data collection system | |
| CN104359391B (en) | Detecting device for reinforced concrete protective layer measurer and floor thickness measurer | |
| CN108955552A (en) | Lane/tunnel surface non-uniform displacement contactless measuring system and method | |
| CN106544983A (en) | A kind of hydraulic model test water surface curve and flow rate measuring device and method | |
| CN208313221U (en) | Complicated shape lane/tunnel surface displacement field observation system | |
| CN205027440U (en) | Vertical road lighting luminance testing arrangement | |
| CN108151766A (en) | Localization method, magnetic nail positioning navigation error correcting method and the positioning device of magnetic nail | |
| CN207215086U (en) | A kind of Portable non-contact rail tunnel Clearance Detection | |
| CN202350789U (en) | Laser radioactive beam monitor | |
| CN101579908B (en) | Calendar on-line thickness-measuring device | |
| CN205940475U (en) | Dark measuring device of magnetron sputtering flat target sculpture | |
| CN117029744A (en) | Control system and control method of multi-machine combined paving device | |
| CN216668910U (en) | Portal frame rail-mounted water level measuring system for river channel | |
| CN212582365U (en) | Portable measuring device for highway construction | |
| CN216144954U (en) | Laser scanning device for measuring biological disturbance microtopography | |
| CN110006595A (en) | Ultra-deep foundation pit support structure plane leakage detection method | |
| CN208536828U (en) | Laser deflection measuring device | |
| CN102322854B (en) | Tunnel monitoring measuring point and TSP (Total Suspended Particulate) blasthole layout device and method | |
| CN208223565U (en) | A kind of big flow open channel measuring automatically flow system | |
| CN106595495A (en) | Optical displacement measurement system | |
| CN202177380U (en) | Tunnel monitoring measurement point and TSP (Tunnel Seismic Predication) blast hole arranging device | |
| CN202033006U (en) | Location system of engineering machinery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190202 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. Address before: 332020 National Youth Venture Base Service Bureau of Gongqing City, Jiujiang City, Jiangxi Province Patentee before: Komsomolsk, Jiangxi Han Neng thin film solar company limited |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190314 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: Han energy mobile Energy Holding Group Co., Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANNENG PHOTOVOLTAIC TECHNOLOGY CO., LTD. |
|
| TR01 | Transfer of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20210918 Granted publication date: 20170208 |
|
| PP01 | Preservation of patent right |