CN205303338U - Direct current switch device is handed over to two -way high pressure - Google Patents
Direct current switch device is handed over to two -way high pressure Download PDFInfo
- Publication number
- CN205303338U CN205303338U CN201620008620.4U CN201620008620U CN205303338U CN 205303338 U CN205303338 U CN 205303338U CN 201620008620 U CN201620008620 U CN 201620008620U CN 205303338 U CN205303338 U CN 205303338U
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- rectified
- rectified semiconductor
- switch
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
Abstract
The utility model discloses a direct current switch device is handed over to two -way high pressure, direct current switch device is handed over to two -way high pressure includes: first main current contact, second main current contact, the coil, the switch unit has first end and second end, and the first end of switch unit contacts with the second main current and links to each other, and the second end of switch unit contacts with first main current and links to each other, the control unit links to each other with coil and switch unit respectively, and the control unit control switching unit of elder generation when control coil circular telegram or outage carries out work in order to reduce the pressure drop between first main current contact and the second main current contact to make switching device open or turn -off the in -process at the low pressure state. Thereby can switch under the high pressure, prevent that the high -tension arc from causing the damage to switching device's main contacts, improves the reliability to the realization twocouese cuts off.
Description
Technical field
This utility model relates to electric and electronic technical field, particularly to a kind of bidirectional high-pressure AC-DC switch device.
Background technology
Relevant relay can cut off device as high-voltage great-current and use. In the related, generally being sealed the contact of relay, and inject noble gas or evacuation to sealing structure, additional Magnetic Control electric arc direction even simultaneously, to avoid the high-voltage arc opened with produce breaking moment that contact is damaged.
But, correlation technique has the disadvantage in that one is, noble gas (such as hydrogen or nitrogen) cools down the mode of electric arc and the additional magnetic force arc extinguishing simultaneously limited use to high-voltage arc, and the life-span of relay sharply declines along with the rising of voltage; Two are, relay can only cut off unidirectional DC current, and twocouese cuts off need to separately add a direct-current high-voltage relay, thus causing cost increase, control complexity, reliability decrease.
Therefore, correlation technique needs to improve.
Utility model content
One of technical problem that this utility model is intended to solve in correlation technique at least to a certain extent. For this, the purpose of this utility model is in that to propose a kind of bidirectional high-pressure AC-DC switch device, and this switching device carries out high pressure by semiconductor device and switches to prevent high-voltage arc that the main contacts of switching device is caused damage.
For reaching above-mentioned purpose, the utility model proposes a kind of bidirectional high-pressure AC-DC switch device, described bidirectional high-pressure AC-DC switch device includes: the first principal current contact; Second principal current contact; Coil; Switch unit, described switch unit has the first end and the second end, and described first end is connected with described second principal current contact, and described second end is connected with described first principal current contact; Control unit, described control unit is connected with described coil and described switch unit respectively, described control unit first controls described switch unit when controlling described coil electricity or power-off and is operated to reduce the pressure drop between described first principal current contact and described second principal current contact, so that switching device is in low-pressure state in being switched on or off process.
According to the bidirectional high-pressure AC-DC switch device that the utility model proposes, first control unit controls switch unit when control coil energising or power-off and is operated, to reduce the pressure drop between the first principal current contact and the second principal current contact, so that switching device is in low-pressure state in being switched on or off process, such that it is able under high pressure switch over, prevent high-voltage arc from the main contacts of switching device causing damage, improve reliability.Further, this switching device can realize twocouese cut-out.
Specifically, described switch unit includes the first rectified semiconductor device, second rectified semiconductor device, 3rd rectified semiconductor device, 4th rectified semiconductor device and gate-controlled switch device, the positive pole of described first rectified semiconductor device is connected with the negative pole of described second rectified semiconductor device, the negative pole of described first rectified semiconductor device is connected with the positive pole of described gate-controlled switch device after being connected with the negative pole of described 3rd rectified semiconductor device, the positive pole of described 3rd rectified semiconductor device is connected with the negative pole of described 4th rectified semiconductor device, the positive pole of described second rectified semiconductor device is connected with the negative pole of described gate-controlled switch device after being connected with the positive pole of described 4th rectified semiconductor device, the control end of described gate-controlled switch device is connected with described control unit, node between positive pole and the negative pole of described second rectified semiconductor device of described first rectified semiconductor device is as described first end, node between positive pole and the negative pole of described 4th rectified semiconductor device of described 3rd rectified semiconductor device is as described second end.
Preferably, described first rectified semiconductor device, the second rectified semiconductor device, the 3rd rectified semiconductor device and the 4th rectified semiconductor device can be diode, IGBT or MOSFET.
Preferably, described gate-controlled switch device can be IGBT, MOSFET, IGCT or IEGT.
Further, current limiting component it is also associated with between emitter stage and described 4th rectified semiconductor device of described IGBT to limit the electric current by described IGBT.
Specifically, described current limiting component includes current-limiting resistance.
Further, being also associated with metal-oxide-semiconductor between emitter stage and described 4th rectified semiconductor device of described IGBT, wherein, after described IGBT opens, described control unit controls the conducting of described metal-oxide-semiconductor, opens speed with what accelerate described switch unit.
Specifically, described control unit is made up of control chip or hardware logic electric circuit.
Specifically, switching device can be relay/catalyst.
Accompanying drawing explanation
Fig. 1 is the block diagram of the bidirectional high-pressure AC-DC switch device according to this utility model embodiment;
Fig. 2 is the circuit theory diagrams of the bidirectional high-pressure AC-DC switch device according to one embodiment of this utility model;
Fig. 3 is waveform diagram when opening of the bidirectional high-pressure AC-DC switch device according to one specific embodiment of this utility model;
Fig. 4 is the waveform diagram during bidirectional high-pressure AC-DC switch device shutoff according to one specific embodiment of this utility model; And
Fig. 5 is the circuit theory diagrams of the bidirectional high-pressure AC-DC switch device according to one specific embodiment of this utility model.
Accompanying drawing labelling:
First principal current contact A, the second principal current contact B, coil L, switch unit 10 and control unit 20;
The first end J1 and the second end J2 of switch unit 10;
First rectified semiconductor device D1, the second rectified semiconductor device D2, the 3rd rectified semiconductor device D3, the 4th rectified semiconductor device D4 and gate-controlled switch device Q1;
Current limiting component 30 and current-limiting resistance R1;
Metal-oxide-semiconductor Q2.
Detailed description of the invention
Being described below in detail embodiment of the present utility model, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of same or like function from start to finish.The embodiment described below with reference to accompanying drawing is illustrative of, it is intended to be used for explaining this utility model, and it is not intended that to restriction of the present utility model.
Below with reference to the accompanying drawings the bidirectional high-pressure AC-DC switch device that this utility model embodiment proposes is described.
Fig. 1 is the block diagram of the bidirectional high-pressure AC-DC switch device according to this utility model embodiment. As it is shown in figure 1, bidirectional high-pressure AC-DC switch device includes: the first principal current contact A, the second principal current contact B, coil L, switch unit 10 and control unit 20.
Wherein, switch unit 10 has the first end J1 and the second end J2, the first end J1 and the second principal current contact B is connected, and the second end J2 and the first principal current contact A are connected; Control unit 20 is connected with coil L and switch unit 10 respectively, control unit 20 first controls switch unit 10 when control coil L energising or power-off and is operated to reduce the pressure drop between the first principal current contact A and the second principal current contact B, so that switching device is in low-pressure state in being switched on or off process.
It should be noted that the energising of control unit 20 control coil L and power-off, and control the duty of switch unit 10, and, switch unit 10 is preferentially open-minded, delayed shutoff.
Specifically, before coil L is energized, it is preferentially open-minded that control unit 20 controls switch unit 10, foreign current (alternating current or DC current) firstly flows through switch unit 10 and produces only small pressure drop between switch unit two ends J1, J2, thus by the pressure drop clamper between the first principal current contact A and the second principal current contact B in low-voltage state, then control unit 20 control coil L is energized so that the first principal current contact A is connected with the second principal current contact B, thus ensureing that the principal current contact of switching device completes open-minded under low-voltage state. Turn off it addition, control unit 20 also controls switch unit 10 after coil L is energized the first Preset Time.
Similarly, before coil L turns off, switch unit 10 first turns on, pressure drop between first principal current contact A and the second principal current contact B is clamped at low-voltage state, control unit 20 priority acccess control coil L power-off is so that the first principal current contact A and the second principal current contact B disconnect, then control switch unit 10 again to turn off, thus ensureing that the principal current contact of switching device completes to turn off under low-voltage state.
According to an embodiment of the present utility model, as in figure 2 it is shown, switch unit 10 includes the first rectified semiconductor device D1, the second rectified semiconductor device D2, the 3rd rectified semiconductor device D3, the 4th rectified semiconductor device D4 and gate-controlled switch device Q1.
Wherein, the positive pole of the first rectified semiconductor device D1 and the negative pole of the second rectified semiconductor device D2 are connected, the negative pole of the first rectified semiconductor device D1 and the negative pole of the 3rd rectified semiconductor device D3 are connected with the positive pole of gate-controlled switch device Q1 after being connected, the positive pole of the 3rd rectified semiconductor device D3 and the negative pole of the 4th rectified semiconductor device D4 are connected, the positive pole of the second rectified semiconductor device D2 and the positive pole of the 4th rectified semiconductor device D4 are connected with the negative pole of gate-controlled switch device Q1 after being connected, the control end of gate-controlled switch device Q1 is connected with control unit 20, node between positive pole and the negative pole of the second rectified semiconductor device D2 of the first rectified semiconductor device D1 is as the first end J1, node between positive pole and the negative pole of the 4th rectified semiconductor device D4 of the 3rd rectified semiconductor device D3 is as the second end J2.
According to a specific embodiment of the present utility model, first rectified semiconductor device D1, the second rectified semiconductor device D2, the 3rd rectified semiconductor device D3 and the four rectified semiconductor device D4 can be diode, IGBT (InsulatedGateBipolarTransistor, insulated gate bipolar transistor) or MOSFET (Metal-Oxide-SemiconductorField-EffectTransistor, metal-oxide layer-quasiconductor-field-effect transistor, is called for short metal-oxide half field effect transistor). It should be noted that, the anode of diode is the positive pole of the first rectified semiconductor device D1, the second rectified semiconductor device D2, the 3rd rectified semiconductor device D3 and the four rectified semiconductor device D4, and the negative electrode of diode is the negative pole of the first rectified semiconductor device D1, the second rectified semiconductor device D2, the 3rd rectified semiconductor device D3 and the four rectified semiconductor device D4.
According to a specific embodiment of the present utility model, gate-controlled switch device Q1 can be IGBT, MOSFET, IGCT (IntegratedGateCommutatedThyristors, integrated gate commutated thyristor) or IEGT (InjectionEnhancedGateTransistor, IEGT), wherein, IGBT and MOSFET can be preferably IGBT and the MOSFET of carbofrax material.
More specifically, be the positive pole of gate-controlled switch device Q1 for the colelctor electrode of IGBT, IGBT, the emitter stage of IGBT is the negative pole of gate-controlled switch device Q1, and the grid of IGBT is the control end of gate-controlled switch device Q1.
Wherein, first rectified semiconductor device D1, the second rectified semiconductor device D2, the 3rd rectified semiconductor device D3 and the four rectified semiconductor device D4 and gate-controlled switch device Q1 can adopt module, can also each adopt a discrete device, it is also possible to each adopt the discrete device of multiple serial or parallel connections. It addition, the first principal current contact A, the second principal current contact B and coil L may make up a relay assembly substantially, switching device can adopt single relay assembly, it is possible to adopt the relay assembly of multiple serial or parallel connection.
In the figure 2 example, the first to fourth rectified semiconductor device D1-D4 and gate-controlled switch device Q1 of the relay assembly of 30VDC, 2200V can be adopted. Before coil L is energized, it is open-minded that control unit 20 controls IGBT, foreign current is supplied to IGBT after diode D1-D4 rectification, the now pressure drop between the first principal current contact A and the second principal current contact B is pulled to low pressure such as less than 10V, thus it is open-minded to ensure that principal current contact under low pressure completes; Similarly, before coil L turns off, control unit 20 controls IGBT and first turns on, pressure drop between first principal current contact A and the second principal current contact B is clamped to low pressure such as less than 10V, control unit 20 is control coil L power-off again, and after coil L power-off, control IGBT shutoff, thus ensure that principal current contact completes to turn off at lower voltages.
By above-mentioned control, the voltage at the first principal current contact A and the second B two ends, principal current contact is made to be in low-pressure state in turning on and off process. Such as Fig. 3 and Fig. 4 example, first principal current contact A and the second principal current contact B switch on and off when 600V, 30A, when connecting, by principal current contact A, the current waveform of B, IGBT current waveform and principal current contact A, B two ends voltage waveform as shown in Figure 3; When disconnecting, by principal current contact A, the current waveform of B, IGBT current waveform and principal current contact A, B two ends voltage waveform as shown in Figure 4.By Fig. 3 and Fig. 4 it can be seen that current commutation characteristic is fine, due to voltage spikes only has some tens of volts.
Thus, the bidirectional high-pressure AC-DC switch device of this utility model embodiment can under high pressure switch over, it is prevented that the main contacts of switching device is caused damage by high-voltage arc, improves switched voltage and such as may be up to 1500V, more can improve the number of times of high pressure switching, it is achieved twocouese cuts off.
In addition, it is necessary to illustrate, the bidirectional high-pressure AC-DC switch device of this utility model embodiment is without adopting the sealing structure in correlation technique, thus it is simple to simplify manufacturing process, reduces manufacturing cost.
Further, as it is shown in figure 5, be also associated with current limiting component 30 between the emitter stage of IGBT and the 4th rectified semiconductor device D4 to limit the electric current by IGBT. Specifically, current limiting component 30 can include current-limiting resistance R1.
Further, as it is shown in figure 5, be also associated with metal-oxide-semiconductor Q2 between the emitter stage of IGBT and the 4th rectified semiconductor device D4, wherein, after IGBT opens, control unit 20 controls metal-oxide-semiconductor Q2 conducting, opens speed with what accelerate switch unit 10.
It should be noted that control unit 20 can be made up of control chip or hardware logic electric circuit.
It should be noted that, according to a specific embodiment of the present utility model, switching device can be relay/catalyst.
To sum up, according to the bidirectional high-pressure AC-DC switch device that this utility model embodiment proposes, first control unit controls switch unit when control coil energising or power-off and is operated, to reduce the pressure drop between the first principal current contact and the second principal current contact, so that switching device is in low-pressure state in being switched on or off process, such that it is able under high pressure switch over, it is prevented that the main contacts of switching device is caused damage by high-voltage arc, improve reliability. Further, this switching device can realize twocouese cut-out. It addition, this switching device is without adopting the sealing structure in correlation technique, thus it is simple to simplify manufacturing process, improves reliability, increase the service life, reduce production cost.
In description of the present utility model, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", " counterclockwise ", " axially ", " radially ", orientation or the position relationship of the instruction such as " circumference " are based on orientation shown in the drawings or position relationship, it is for only for ease of description this utility model and simplifies description, rather than the device of instruction or hint indication or element must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that to restriction of the present utility model.
Additionally, term " first ", " second " are only for descriptive purposes, and it is not intended that indicate or imply relative importance or the implicit quantity indicating indicated technical characteristic. Thus, define " first ", the feature of " second " can express or implicitly include at least one this feature. In description of the present utility model, " multiple " are meant that at least two, for instance two, three etc., unless otherwise expressly limited specifically.
In this utility model, unless otherwise clearly defined and limited, the term such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, for instance, it is possible to it is fixing connection, it is also possible to be removably connect, or integral;Can be mechanically connected, it is also possible to be electrical connection; Can be joined directly together, it is also possible to be indirectly connected to by intermediary, it is possible to be connection or the interaction relationship of two elements of two element internals, unless otherwise clear and definite restriction. For the ordinary skill in the art, it is possible to understand above-mentioned term concrete meaning in this utility model as the case may be.
In this utility model, unless otherwise clearly defined and limited, fisrt feature second feature " on " or D score can be that the first and second features directly contact, or the first and second features are by intermediary mediate contact. And, fisrt feature second feature " on ", " top " and " above " but fisrt feature directly over second feature or oblique upper, or be merely representative of fisrt feature level height higher than second feature. Fisrt feature second feature " under ", " lower section " and " below " can be fisrt feature immediately below second feature or obliquely downward, or be merely representative of fisrt feature level height less than second feature.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means in conjunction with this embodiment or example describe are contained at least one embodiment of the present utility model or example. In this manual, the schematic representation of above-mentioned term is necessarily directed to identical embodiment or example. And, the specific features of description, structure, material or feature can combine in one or more embodiments in office or example in an appropriate manner. Additionally, when not conflicting, the feature of the different embodiments described in this specification or example and different embodiment or example can be carried out combining and combining by those skilled in the art.
Although above it has been shown and described that embodiment of the present utility model, it is understandable that, above-described embodiment is illustrative of, it is not intended that to restriction of the present utility model, above-described embodiment can be changed in scope of the present utility model, revises, replace and modification by those of ordinary skill in the art.
Claims (9)
1. a bidirectional high-pressure AC-DC switch device, it is characterised in that including:
First principal current contact;
Second principal current contact;
Coil;
Switch unit, described switch unit has the first end and the second end, and described first end is connected with described second principal current contact, and described second end is connected with described first principal current contact;
Control unit, described control unit is connected with described coil and described switch unit respectively, described control unit first controls described switch unit when controlling described coil electricity or power-off and is operated to reduce the pressure drop between described first principal current contact and described second principal current contact, so that switching device is in low-pressure state in being switched on or off process.
2. bidirectional high-pressure AC-DC switch device according to claim 1, it is characterized in that, described switch unit includes the first rectified semiconductor device, second rectified semiconductor device, 3rd rectified semiconductor device, 4th rectified semiconductor device and gate-controlled switch device, the positive pole of described first rectified semiconductor device is connected with the negative pole of described second rectified semiconductor device, the negative pole of described first rectified semiconductor device is connected with the positive pole of described gate-controlled switch device after being connected with the negative pole of described 3rd rectified semiconductor device, the positive pole of described 3rd rectified semiconductor device is connected with the negative pole of described 4th rectified semiconductor device, the positive pole of described second rectified semiconductor device is connected with the negative pole of described gate-controlled switch device after being connected with the positive pole of described 4th rectified semiconductor device, the control end of described gate-controlled switch device is connected with described control unit, node between positive pole and the negative pole of described second rectified semiconductor device of described first rectified semiconductor device is as described first end, node between positive pole and the negative pole of described 4th rectified semiconductor device of described 3rd rectified semiconductor device is as described second end.
3. bidirectional high-pressure AC-DC switch device according to claim 2, it is characterized in that, described first rectified semiconductor device, the second rectified semiconductor device, the 3rd rectified semiconductor device and the 4th rectified semiconductor device are diode, IGBT or MOSFET.
4. the bidirectional high-pressure AC-DC switch device according to Claims 2 or 3, it is characterised in that described gate-controlled switch device is IGBT, MOSFET, IGCT or IEGT.
5. bidirectional high-pressure AC-DC switch device according to claim 4, it is characterised in that be also associated with current limiting component between emitter stage and described 4th rectified semiconductor device of described IGBT to limit the electric current by described IGBT.
6. bidirectional high-pressure AC-DC switch device according to claim 5, it is characterised in that described current limiting component includes current-limiting resistance.
7. bidirectional high-pressure AC-DC switch device according to claim 4, it is characterized in that, it is also associated with metal-oxide-semiconductor between emitter stage and described 4th rectified semiconductor device of described IGBT, wherein, after described IGBT opens, described control unit controls the conducting of described metal-oxide-semiconductor, opens speed with what accelerate described switch unit.
8. bidirectional high-pressure AC-DC switch device according to claim 1, it is characterised in that described control unit is made up of control chip or hardware logic electric circuit.
9. bidirectional high-pressure AC-DC switch device according to claim 1, it is characterised in that described switching device is relay/catalyst.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620008620.4U CN205303338U (en) | 2016-01-05 | 2016-01-05 | Direct current switch device is handed over to two -way high pressure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620008620.4U CN205303338U (en) | 2016-01-05 | 2016-01-05 | Direct current switch device is handed over to two -way high pressure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205303338U true CN205303338U (en) | 2016-06-08 |
Family
ID=56484543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620008620.4U Active CN205303338U (en) | 2016-01-05 | 2016-01-05 | Direct current switch device is handed over to two -way high pressure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205303338U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113972813A (en) * | 2020-07-23 | 2022-01-25 | 深圳市鹏源电子有限公司 | Power switching control circuit |
-
2016
- 2016-01-05 CN CN201620008620.4U patent/CN205303338U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113972813A (en) * | 2020-07-23 | 2022-01-25 | 深圳市鹏源电子有限公司 | Power switching control circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105830344B (en) | For being switched on and off the switching device of electric current | |
| CN1280856C (en) | Hybrid DC electromagnetic contactor | |
| KR101720112B1 (en) | apparatus for limiting current of circuit or breaking current, and control method thereof | |
| CN204425031U (en) | A kind of intelligent diverter switch | |
| CN110808572A (en) | Switching device | |
| CN104137211A (en) | Hvdc hybrid circuit breaker with snubber circuit | |
| KR20180028488A (en) | Interrupt device for interrupting direct current | |
| CN109950866B (en) | Current breaker | |
| CN113257597A (en) | Hybrid direct current breaker based on composite current conversion mode and control method thereof | |
| CN102262977A (en) | Drive circuit of AC contactor | |
| CN103841694B (en) | A kind of light fixture | |
| CN205303338U (en) | Direct current switch device is handed over to two -way high pressure | |
| CN211456991U (en) | High-power unit bypass device based on permanent magnet contactor | |
| JP2018195565A (en) | Direct current shut-down device | |
| KR100344056B1 (en) | Two-Stage Mechanical-Thyristor Switch | |
| CN101030738B (en) | Motor control device | |
| CN104617782A (en) | Surge current resisting device, surge current resisting method and household appliance | |
| TW201608828A (en) | Rapid cutoff device and operation method for SCR DC switches | |
| JP2018125270A (en) | DC power system safety switchgear | |
| CN107202955B (en) | Device and method for indirectly detecting on-off state of vacuum contactor | |
| CN109904833A (en) | A kind of dc circuit breaker and its control method | |
| CN210957783U (en) | Low-voltage mixed DC circuit breaker | |
| Wang et al. | An arcless voltage regulator based on hybrid tap changing topology | |
| JP2017220446A (en) | Switching device | |
| KR101894973B1 (en) | Zero-voltage/zero-current dc circuit breaker |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |