CN2051788U - Contactless magnetic sensitive potentiometer - Google Patents

Contactless magnetic sensitive potentiometer Download PDF

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Publication number
CN2051788U
CN2051788U CN 89207341 CN89207341U CN2051788U CN 2051788 U CN2051788 U CN 2051788U CN 89207341 CN89207341 CN 89207341 CN 89207341 U CN89207341 U CN 89207341U CN 2051788 U CN2051788 U CN 2051788U
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China
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chip
material
magnet
potentiometer
non
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CN 89207341
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Chinese (zh)
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王元玮
于朴
田跃
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王元玮
于朴
田跃
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Priority to CN 89207341 priority Critical patent/CN2051788U/en
Publication of CN2051788U publication Critical patent/CN2051788U/en

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Abstract

The utility model relates to a contactless magnetic sensitive potentiometer and belongs to a potentiometer. The principle and structure of the utility model is different from current potentiometers. According to magneto resistive effect principle that the variation of the material electric resistivity is conducted by the variation of the magnetic field intensity, the utility model is composed of a chip (1), magnets (2), a rotating shaft (3), bearings (4), end covers (5), cases (7), a framework (8), soft magnetic material (10) and so on. The utility model has the advantages of long lifetime, contactless abrasions, non-electric spark, quietness, small rotative moment, good linearity and high precision.

Description

本实用新型涉及一种利用磁阻效应制造的无触点电位器,属于电气元件电位器类。 The present invention relates to a non-contact potentiometer for producing the magnetoresistive effect, the electrical component belonging to the class potentiometer.

目前使用的电位器一般是由转动轴带动一个滑动片(或接触电刷)与电阻绕组(或电阻片)相对接触滑动来改变电阻值,以达到调节电位的目的。 Currently used by the potentiometer are generally driven by a rotary shaft slide (or wiper) and the resistance of the windings (or varistor) slidable relative to the contact resistance value is changed, in order to achieve the purpose of regulating the potential. 由于上述电位器触点的存在,产生如下问题,①易磨损,寿命短;②转动力矩大;③接触不良会产生电火花及电干扰;④不适用于高速旋转调节;⑤转动角度有限。 Due to the presence of the potentiometer wiper, the problem arises, ① easy to wear, short life; ② large rotating torque; ③ poor contact can cause arcing and electrical interference; ④ Not adjusted for high speed rotation; ⑤ limited rotational angle.

本实用新型采用与上述电位器完全不同的原理和结构,从而克服了上述问题。 The present invention uses the above-described potentiometer completely different principles and structure to overcome the above problems. 无触点磁敏电位器是根据物理学磁阻效应原理,即磁场强度变化引起某些材料电阻率发生变化,制成无触点磁敏电位器。 Magneto contactless potentiometer is in accordance with principles of physics magnetoresistance effect, i.e. the magnetic field strength causes a change resistivity of certain materials changes made non-contact magneto potentiometer. 具有寿命长、无触点、无级变化、无接触噪声、灵敏度高、性能稳定等优点。 It has a long life, non-contact, infinitely variable, non-contact noise, high sensitivity and stable performance.

本实用新型的结构图如附图1所示,附图1为无触点磁敏电位器的结构图,其中(1)为芯片,(2)为磁铁,(3)为旋转轴,(4)为两个微型轴承,(5)为端盖,(6)为固定孔,(7)为外壳,(8)为框架,(9)为线路板,(10)为软磁材料,(11)、(12)、(13)为三根输出线。 A configuration diagram of the present invention as shown in Figure 1, Figure 1 is a configuration diagram of the contactless magnetic sensing potentiometer, wherein (1) a chip, (2) a magnet (3) as a rotation axis (4 ) two miniature bearings, (5) an end cap (6) is a fixing hole (7) of the housing (8) of the framework (9) for the wiring board, (10) of soft magnetic material (11 ), (12), (13) are three output lines.

芯片(1)为用磁阻材料经光刻制成的磁敏电阻芯片,在芯片上方安装一个无接触的可在360°范围旋转的、一定形状的磁铁(2),通过旋转轴(3)的转动,可改变磁铁(2)与芯片(1)之间的相对位置和距离,使芯片的电阻发生变化,达到调节电位的目的。 Chip (1) is a magnetoresistive material magnetoresistor chips made by photolithography, mounted over a contactless chip rotatable in 360 ° range, a shaped magnet (2), by rotating the shaft (3) rotation of the magnet can be changed (2) the relative positions of the chip and the distance between (1) the change in the resistance of the chip, to achieve the purpose of regulating the potential.

本实用新型的工作原理如附图2所示,其中芯片(1)被光刻成对称的a、b两片即(1a)、(1b),由其中心引出一根输出线(12),另两端引出两根输出线(11,13)。 Working principle of the present invention as shown in Figure 2, wherein the chip (1) is symmetrical lithography a, b, i.e., two (1a), (1b), an output line drawn by the center (12), The other two output lines at both ends of the lead (11, 13). 其等效电路如附图3所示,当磁铁(2)转到如虚线所示的水平位置(2′)时,Ra=Rb此时输出电压位于附图4输出特性曲线中的“0”点位置。 An equivalent circuit as shown in Figure 3, when the horizontal position of the magnet (2) as shown in dotted lines to the (2 ') of, Ra = Rb Figure 4 when the output voltage is an output characteristic curve "0" point. 当磁铁(2)转到实线位置时Ra≠Rb,输出电压Uout与磁铁的位置变化θ之间的关系曲线如附图4所示,在“0”附近存在一定的线性区域。 When the magnet (2) to the solid line position Ra ≠ Rb, the output voltage Uout and the magnet position change curve between θ as shown in the drawings, in the vicinity of "0" certain linear region 4.

根据上述原理研制成的无触点磁敏电位器具有以下特点:①寿命极长,②无接触磨损,③无电噪声、电火花以及电干扰,④转动力矩小,⑤可连续在任意角度变化,⑥可高速旋转调节,⑦高频响应好,⑧线性度好,⑨无级变化,⑩精密度高。 According to the principle of non-contact magneto developed into a pot with the following characteristics: ① a very long life, no contact wear ②, ③ no electrical noise, electrical interference, and electrical discharge, the rotation torque is small ④, ⑤ continuously change at any angle , high speed rotation can be adjusted ⑥, ⑦ good frequency response, good linearity ⑧, ⑨ infinitely variable, ⑩ high precision.

本实用新型的实施例,采用了一种内部具有平行排列短路条的半导体材料,InSb-NiSb(锑化锢-锑化镍)功能复合磁阻材料,采用定向结晶法制成NiSb纤维在InSb半导体中单向平行排列的组织。 Example embodiments of the present invention using a semiconductor material having an internal shorting bars arranged in parallel, NiSb-InSb (indium antimony - antimony nickel) functional composite magnetoresistive material, directional crystallization method into fibers InSb semiconductor NiSb arranged in parallel unidirectional tissue. InSb是Ⅲ-Ⅴ族半导体,其载流子具有高的迁移率。 InSb is Ⅲ-Ⅴ semiconductors, which has high carrier mobility. NiSb是金属间化合物,具有高的电导率,相当于短路条,光刻时要注意NiSb的纤维要与电流通过的方向垂直。 NiSb is an intermetallic compound having a high conductivity equivalent to a short circuit, please note the time of photolithography to NiSb fiber perpendicular to the direction of current through. 这种材料具有极高的磁阻效应如附图5所示,其中KG为千高斯,ρβ/ρO为加磁场时的电阻率ρβ与未加磁场的电阻率ρO之比。 This material has an extremely high magnetoresistance effect as shown in FIG. 5, where KG kilo Gauss, ρβ / ρO ρβ resistivity when a magnetic field is applied po specific resistivity of the non-applied magnetic field. 当通过的电流、磁场和内部短路条三者相互垂直时,材料的磁阻效应最大。 When current passes through the magnetic field and perpendicular to each of the three inner shorting bars, the maximum magnetoresistance effect material. 例如,在上述条件下,当磁场为10KG时,其ρβ/ρO可达13倍以上。 For example, under the above conditions, when a magnetic field is 10KG, which ρβ / ρO up to 13 times. ρβ/ρO随磁场加大而加大,在小于3KG时ρβ/ρO正比于B8(B为磁场强度)。 ρβ / ρO and increase with increasing magnetic field, ρβ at less than 3KG / ρO proportional to B8 (B is the magnetic field strength). 大于3KG后,ρβ/ρO与B的关系近似成线性变化。 After greater than 3KG, relationship ρβ / ρO and B approximated as linear.

将上述磁阻材料切割,抛磨成薄片,经光刻后制成如附图6所示的磁敏电阻芯片。 The above magnetoresistive material cutting, polishing ground sheet, after photolithography is made as shown in figures 6 magnetoresistor chips. 图中(14)为0.5mm陶瓷衬底片;(15)为磁阻材料光刻成的磁敏电阻片,其厚度为20到30μm(微米),直径φ5.2mm,牢固地粘接在衬底上,(16×4)为锢焊焊点,(11、12、13)为φ0.15mm的银丝引出线。 Drawing (14) is a ceramic substrate sheet 0.5mm; (15) of magnetoresistive material formed by photolithography magnetoresistor sheet having a thickness of 30 m to 20 (microns) in diameter φ5.2mm, firmly bonded to the substrate upper, (16 × 4) is soldered with indium, (11,12,13) ​​of the silver φ0.15mm lead. (17)为短路条。 (17) of shorting bar.

为了使电阻随磁场变化呈线性关系,永久磁铁(2)选用的磁场强度是3.5到3.8KG的钕铁硼材料。 In order to make resistance changes linearly with the magnetic field, the permanent magnet (2) selection of field strength is 3.5 to 3.8KG of NdFeB material. 其形状为φ5.5mm的半圆柱体高为5mm。 In the shape of a half-cylinder φ5.5mm height of 5mm. 将磁铁完全同心地粘接在与转轴为一体的圆盘上。 The magnet concentrically completely bonded to the rotation shaft integrally with the disc. 为了保证转轴,磁铁与磁敏电阻片完全对心,然后用两个微型轴承(4)支承转动轴。 In order to ensure the rotation shaft, the magnet and the magnetic resistance of core sheet completely, then two micro-bearing (4) supporting the rotary shaft. 端盖(5)为合金铝材料,目的是断开磁路,同时使固定轴承槽保持同心度。 End caps (5) of an aluminum alloy material, the purpose of the magnetic circuit is open, while holding the fixing groove bearing concentricity. 框架(8)可选用塑料制成,固定磁铁与磁阻芯片距离为1mm,(10)为φ5mm的软磁材料,它粘接在磁阻芯片背后,且固定在塑料框架(8)中,起到一个磁场集束器的作用。 Frame (8) optional plastic, chips fixed magnet reluctance distance of 1mm, (10) of soft magnetic material φ5mm, which is bonded to the back of the magnetoresistive chip, and fixed in a plastic frame (8), from to a cluster's magnetic field. 保证磁场垂直穿过芯片,然后,对磁阻芯片进行配平、线性化及温度补偿处理焊接在线路板(9)上,引出三根引出线。 To ensure that the magnetic field vertically through the chip, and then, the magnetoresistive chip trim, the linearization and temperature compensation process soldered circuit board (9), three lead wires drawn. 电位器外壳(7)为了减少外界磁场的干扰,选用0.5mm钢板制成,构成磁屏蔽。 Potentiometer housing (7) in order to reduce the interference of external magnetic field, the choice of 0.5mm steel plate, constituting the magnetic shield. 与端盖紧配合并用环氧树脂粘封,电位器即制成。 Tight fit with the end cap and sealed with epoxy adhesive, i.e. made potentiometer.

本实用新型的电器与机械特性:①输出电压比 每变化10°最小变化率为4% The present invention electrical and mechanical properties: ① 10 ° change in the output voltage change per minimum ratio of 4%

②线性度 ≤1.5%③总电阻 2-30KΩ④工作电压 最大DC12V⑤温度系数 ±0.05%(每变化1℃输出电压变化)⑥耐压值 AC 500V⑦机械转角 连续360度可调⑧重量 <20克⑨工作温度 -15-75℃ Linearity ≤1.5% ③ ② total resistance 2-30KΩ④ DC12V⑤ maximum operating voltage temperature coefficient of ± 0.05% (per 1 ℃ change the output voltage variation) ⑥ withstand voltage AC 500V⑦ mechanical angle 360 ​​degrees continuously adjustable ⑧ weight <20 g ⑨ work temperature -15-75 ℃

Claims (2)

1.一种无触点磁敏电位器,由芯片(1)、磁铁(2)、旋转轴(3)、轴承(4)、端盖(5)、外壳(7)、框架(8)、线路板(9)、软磁材料(10)等组成,其特征在于:①芯片(1)为用磁阻材料经光刻制成的磁微电阻芯片,在芯片上方安装一个无接触的可在360度范围旋转的,一定形状的磁铁(2);②磁铁(2)是具有一定形状的永久磁铁,保证同心地粘接在与转轴(3)为一体的圆盘上,用两个微型轴承(4)支承转动轴(3);③端盖(5)为合金铝材料,框架(8)用塑料,软磁材料(10)粘接在磁阻芯片背后,并固定在框架(8)中;④外壳(7)选用薄钢板制成,与端盖紧配合并用环氧树脂粘封。 A non-contact magneto potentiometer, a chip (1), the magnet (2), the rotary shaft (3), the bearing (4), cover (5), the housing (7), the frame (8), the circuit board (9), a soft magnetic material (10) and the like, which is: ① chip (1) is a magnetic magnetoresistive material with the micro-chip resistors formed by photolithography, over the chip mounting may be a non-contact 360 degree range of rotation, a shaped magnet (2); ② magnet (2) is a permanent magnet having a certain shape, ensure concentrically bonded to the rotary shaft (3) as one of the disc, with two miniature bearings (4) supporting the rotating shaft (3); ③ cap (5) is an aluminum alloy material, the frame (8) with a plastic, soft magnetic material (10) adhered to the back of the magnetoresistive chip, and fixed to a frame (8) ; ④ housing (7) use thin steel plate, and a tight fit with the end caps with epoxy resin sealant.
2.如权利要求1所述的无触点磁敏电位器,其特征在于:芯片(1)采用一种内部具有平行排列短路条的半导体材料InSb-NiSb功能复合磁阻材料,采用定向结晶法制成NiSb纤维在InSb半导体中单向平行排列的组织,光刻时要注意NiSb的纤维要与电流通过的方向垂直,磁铁(2)选用钕-铁-硼材料构成 永久磁铁,形状为半圆柱体。 2. The non-contact magneto potentiometer according to claim 1, wherein: the chip (1) having an internal short circuit of semiconductor material arranged in parallel strips InSb-NiSb functional composite magnetoresistive material, directional crystallization method NiSb into unidirectional fibers arranged in parallel in the semiconductor InSb tissue, NiSb photolithography is to be noted that the direction of the fibers are perpendicular to the current through the magnet (2) selection of a neodymium - iron - boron permanent magnet material, the shape of a half-cylinder .
CN 89207341 1989-05-24 1989-05-24 Contactless magnetic sensitive potentiometer CN2051788U (en)

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CN 89207341 CN2051788U (en) 1989-05-24 1989-05-24 Contactless magnetic sensitive potentiometer

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100487298C (en) 2007-04-02 2009-05-13 北京科技大学 Electric-controlled cradle head
CN100524733C (en) 2003-12-22 2009-08-05 富士电机电子技术株式会社 Semiconductor power module
CN102798404A (en) * 2012-08-17 2012-11-28 重庆诺柏恩自动化技术有限公司 Rotating shaft-type potentiometer
CN104240880A (en) * 2013-06-24 2014-12-24 东莞市川强电子科技有限公司 High-performance magnetic rotation positioning potentiometer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100524733C (en) 2003-12-22 2009-08-05 富士电机电子技术株式会社 Semiconductor power module
CN100487298C (en) 2007-04-02 2009-05-13 北京科技大学 Electric-controlled cradle head
CN102798404A (en) * 2012-08-17 2012-11-28 重庆诺柏恩自动化技术有限公司 Rotating shaft-type potentiometer
CN104240880A (en) * 2013-06-24 2014-12-24 东莞市川强电子科技有限公司 High-performance magnetic rotation positioning potentiometer
CN104240880B (en) * 2013-06-24 2018-04-17 东莞市川强电子科技有限公司 High-performance magnetic rotation positions Middle Eocene device

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