CN204993104U - Three inverter power unit - Google Patents
Three inverter power unit Download PDFInfo
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- CN204993104U CN204993104U CN201520468419.XU CN201520468419U CN204993104U CN 204993104 U CN204993104 U CN 204993104U CN 201520468419 U CN201520468419 U CN 201520468419U CN 204993104 U CN204993104 U CN 204993104U
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- 238000000034 method Methods 0.000 claims abstract description 4
- 208000035126 Facies Diseases 0.000 claims description 2
- 238000009434 installation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
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Abstract
The utility model discloses an each looks unit of three level contravariant (b) ware (b) power unit all includes 3 IGBT, half bridge type module, the utility model discloses regard 1 IGBT, half bridge type module as the catching diode who contains 2 units, 2 half bridge type module of individual IGBT is connected with catching diode's positive pole as upper and lower bridge arm, the short circuit point that wherein is used as two units of last bridge arm IGBT half -bridge module, and the short circuit point of two units of bridge arm is connected with another catching diode's negative pole under being used as, 1 IGBT, half bridge type module and 2 half bridge type modules of IGBT of containing 2 unit catching diode are the article font arranges, places on the radiator, connects the IGBT each point and constitutes single -phase bridge through female the arranging of stromatolite, the utility model discloses the contravariant power unit of three level technique has characteristics such as mutual independence, simple, the low stray inductance of installation.
Description
Technical field
The present invention relates to field of power electronics, more particularly, relate to a kind of three-level inverter circuit and modular construction thereof.
Background technology
Three-level inverter is the novel inverter carrying out transforming on two-level inversion device basis, DC converting is exported for exchanging by three-phase bridge by three-level inverter, each brachium pontis of three-level inverter three-phase bridge is considered as a tri-level inversion power cell by the present invention, tri-level inversion power cell is the element of three-level inverter, direct voltage is become many level staircase waveform output voltage by three tri-level inversion power cells by three-level inverter, can make the equivalence value of output voltage waveforms more close to sinusoidal wave.Three-level inverter is a kind of PWM inverter that can be used for high-power, has power factor close to 1, and switching voltage stress reduces the advantage of half than two level.But because three-level inverter is more complicated relative to two-level inversion device structure, how to carry out the emphasis that structural design is three-level inverter.
Summary of the invention
Described tri-level inversion power cell includes 3 IGBT semi-bridge type modules, and wherein 1 IGBT semi-bridge type module adopts the method for shorted gate to form 2 clamp diodes; 2 IGBT semi-bridge type modules are used as upper and lower bridge arm, and the short circuit point being wherein used as two unit of upper brachium pontis IGBT half-bridge module is connected with the anode of clamp diode, and the short circuit point as two unit of lower brachium pontis is connected with the negative electrode of another clamp diode; 1 the IGBT semi-bridge type module and 2 the IGBT semi-bridge type modules that form 2 clamp diodes are that isosceles triangle is arranged, and form single-phase bridge;
Described tri-level inversion unit module is characterized in that 1 IGBT half-bridge module shorted gate forms 2 clamp diodes.
Described tri-level inversion unit module is characterized in that 2 IGBT semi-bridge type modules are used as upper and lower bridge arm, the short circuit point being wherein used as two unit of upper brachium pontis IGBT half-bridge module is connected with the anode of clamp diode, and the short circuit point as two unit of lower brachium pontis is connected with the negative electrode of another clamp diode;
Described tri-level inversion unit module is characterized in that 1 IGBT semi-bridge type module of formation 2 clamp diodes and 2 IGBT semi-bridge type modules are that isosceles triangle is arranged, and forms single-phase bridge.
Described tri-level inversion unit is placed on a heat sink, connects IGBT each point form single-phase bridge by stack bus bar.
Accompanying drawing explanation
Fig. 1 is main topological schematic diagram of the present invention
Fig. 2 is unit module of the present invention arrangement schematic diagram
Fig. 3 is IGBT of the present invention and busbar connected mode
Fig. 4-6 is busbar schematic diagrames of the present invention
specific implementation method
Below that technical scheme of the present invention describes in detail.
As shown in Figure 1, the present invention is a kind of tri-level inversion unit module, each facies unit module is made up of three groups of circuit units, wherein two groups of circuit units comprise two IGBT of series connection respectively, set of circuits unit has the structure identical with other two groups of circuit units in addition, but the present invention only make use of the part of wherein diode.For R phase, the present invention will wherein use in two groups of circuit units T1, T2 series connection, above two IGBT of set of circuits unit T1, Tr1, Tr2 are cascaded structure, and Tr1, Tr2 are respectively with body diode DT1, DT2.Set of circuits unit T2 structure is with set of circuits unit T1 is identical above below.The collector electrode of inner for set of circuits unit T1 above Tr1 and bus P couple together by the present invention, the collector electrode of the emitter of Tr2 with the inner Tr3 of set of circuits unit T2 is below coupled together, then the emitter of the Tr4 of circuit unit T2 inside and bus N are coupled together, the emitter of inner Tr2 and the collector electrode of the inner Tr3 of circuit unit T2 couple together with circuit unit T1 respectively to exchange outlet R.The inner emitter of Tr1 of negative electrode and circuit unit T1 remaining the Dr1 of set of circuits cells D 1 and the collector electrode of Tr2 are coupled together, the anode of Dr1 is connected with bus O, the negative electrode of inner for circuit unit D1 Dr2 is connected with bus O, the anode of Dr2 and the circuit unit T2 inside emitter of Tr3 and the collector electrode of Tr4 are coupled together.Capacitance group is connected in the middle of bus PO and ON.
As shown in Figure 2, identical inner circuit unit structure is had for R phase T1, T2, D1, three groups of circuit units are Chinese character pin-shaped arrangement, bus bar PON strides across circuit unit D1 and passes from the centre of T1, T2, bus P is connected with the collector electrode (4 pins of circuit unit T1) of the inner Tr1 of circuit unit T1, and other one end of bus P is held with DC support capacitance group P and is connected.The emitter (3 pins of circuit unit T2) of the inner Tr4 of bus N and circuit unit T2 is connected, and to hold and is connected for other one section of bus N with the N of DC support capacitance group.The inner anode of Dr1 of bus O and circuit unit D1 and the negative electrode (10,11 pins of circuit unit D1) of Dr2 are connected, and to hold and are connected for other one section of bus O with the O of DC support capacitance group.The emitter (3 pins of circuit unit T1) of inner Tr2 and the collector electrode (4 pins of circuit unit T2) of the inner Tr3 of circuit unit T2 couple together with circuit unit T1 respectively to exchange leading-out terminal R.In addition the negative electrode (4 pins of circuit unit D1) of inner for circuit unit D1 Dr1 and the inner emitter of Tr1 of circuit unit T1 and the collector electrode (10,11 pins of circuit unit T1) of Tr2 are coupled together, the anode (3 pins of circuit unit D1) of inner for circuit unit D1 Dr2 and the inner emitter of Tr3 of circuit unit T2 and the collector electrode (10,11 pins of circuit unit T2) of Tr4 are coupled together.Constitute the circuit unit module of R phase, other S, T-phase all adopt identical topological structure.
Be modular construction by this tri-level inversion unit topology design, comprise T1, T2, D1, according to Fig. 2 order arrangement formation tri-level inversion unit module, then three tri-level inversion unit modules are installed on a heat sink, three tri-level inversion unit modules are connected with DC support capacitance group respectively, this three level module can reduce the stray inductance of main circuit greatly, reduces shutoff overvoltage when IGBT turns off, reduces the voltage stress of IGBT.
Technical staff in the art will be appreciated that, above embodiment is only used to object of the present invention is described, and be not used as limitation of the invention, as long as in essential scope of the present invention, the change of the above embodiment, modification all will be dropped in the scope of claim of the present invention.
Claims (2)
1. a three-level inverter power cell, be located between direct current and three-phase or alternating current, it is characterized in that: each facies unit module includes 3 IGBT semi-bridge type modules, wherein 1 IGBT semi-bridge type module adopts the method for shorted gate to form 2 clamp diodes; 2 IGBT semi-bridge type modules are used as upper and lower bridge arm, and the short circuit point being wherein used as two unit of upper brachium pontis IGBT half-bridge module is connected with the anode of clamp diode, and the short circuit point as two unit of lower brachium pontis is connected with the negative electrode of another clamp diode; 1 the IGBT semi-bridge type module and 2 the IGBT semi-bridge type modules that form 2 clamp diodes are that isosceles triangle is arranged, and form single-phase bridge.
2. a kind of three-level inverter power cell as claimed in claim 1, is characterized in that IGBT is placed on loose device, connects IGBT each point form single-phase bridge by busbar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520468419.XU CN204993104U (en) | 2015-07-03 | 2015-07-03 | Three inverter power unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520468419.XU CN204993104U (en) | 2015-07-03 | 2015-07-03 | Three inverter power unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204993104U true CN204993104U (en) | 2016-01-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520468419.XU Expired - Fee Related CN204993104U (en) | 2015-07-03 | 2015-07-03 | Three inverter power unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204993104U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107167676A (en) * | 2017-04-07 | 2017-09-15 | 清华大学 | A kind of converters DC master row stray parameter extracting method |
-
2015
- 2015-07-03 CN CN201520468419.XU patent/CN204993104U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107167676A (en) * | 2017-04-07 | 2017-09-15 | 清华大学 | A kind of converters DC master row stray parameter extracting method |
| CN107167676B (en) * | 2017-04-07 | 2019-12-10 | 清华大学 | method for extracting stray parameters of direct-current busbar of power electronic converter |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160120 |