CN204944731U - High performance thin film pressure transducer - Google Patents
High performance thin film pressure transducer Download PDFInfo
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- CN204944731U CN204944731U CN201520619296.5U CN201520619296U CN204944731U CN 204944731 U CN204944731 U CN 204944731U CN 201520619296 U CN201520619296 U CN 201520619296U CN 204944731 U CN204944731 U CN 204944731U
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- pressure transducer
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- thin film
- elastic body
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Abstract
The utility model discloses a kind of high performance thin film pressure transducer, comprise a circular metal elastic body, described circular metal elastic body adopts the method for vacuum coating to prepare successively dielectric film, strain resistor, lead pad and diaphragm; Described strain resistor adopts the one in gallium arsenide, samaric sulfide, gallium nitride to be prepared into film, forms four sensitive resistances on described circular metal elastic body by the symmetrical formation wheatstone bridge circuits of central shaft by photoetching process.Add silicon, sulphur and one or more rare earth element that mass percent is less than 5% in described gallium arsenide, samaric sulfide, gallium nitride, reduce temperature-coefficient of electrical resistance, improve resistance temperature stability.Compared with prior art, because sensitive material strain factor is greater than 10, improve the sensitivity of sensor, turn reduce temperature-coefficient of electrical resistance simultaneously.Sensitivity and the temperature-coefficient of electrical resistance of sensor are all better than like product, remain other premium properties of diaphragm pressure sensor simultaneously.
Description
Technical field
The utility model relates to a kind of pressure transducer, particularly relates to the high performance thin film pressure transducer that a kind of semiconductor pressure sensitive material manufactures.
Background technology
Diaphragm pressure sensor is a kind of pressure transducer of function admirable, and it is a kind of novel sensor be born along with thin film technique development.Because diaphragm pressure sensor adopts vacuum film technology of preparing, make it have that synthesis precision is high, operating temperature range is wide, good stability, anti-vibration, the good characteristics such as corrosion-resistant, be used widely in multiple fields such as weaponry, Aero-Space, petrochemical complex, nuclear industry, metallurgy.
At present, the sensitive resistance of diaphragm pressure sensor mainly adopts nickel-chrome material, tantalum-nitride material or semiconductor nano silicon materials.Because nickel-chrome strain factor is lower than 2.5, tantalum-nitride material strain factor about 3.5, the Sensitivity in Pressure Sensors adopting this kind of strain gauge material to manufacture is not high.Adopt semiconductor nano silicon materials to manufacture pressure transducer, although sensitivity improves, the temperature drift of silicon materials is comparatively large, and after making pressure transducer, its temperature performance is bad, so just limits this kind of pressure transducer and uses in the presence of a harsh environment.Develop highly sensitive and that temperature drift is little high performance pressure sensor of crucial importance.
Gallium arsenide, samaric sulfide, gallium nitride is adopted to be that the diaphragm pressure sensor that sensitive material manufactures can solve above-mentioned Problems existing.
Summary of the invention
The purpose of this utility model is to provide a kind of gallium arsenide, samaric sulfide, gallium nitride of adopting to be the high performance thin film pressure transducer that sensitive material manufactures, for the deficiencies in the prior art, solve the not high and problem that temperature drift is large of diaphragm pressure sensor sensitivity, realize in the presence of a harsh environment to the accurate measurement of pressure.
For solving above technical matters, the technical solution of the utility model is: a kind of high performance thin film pressure transducer, it is characterized in that, comprise a circular metal elastic body, described circular metal elastic body adopts the method for vacuum coating to prepare successively dielectric film, strain resistor, lead pad and diaphragm; Described strain resistor adopts the one in gallium arsenide, samaric sulfide, gallium nitride to be prepared into film, forms four sensitive resistances on described circular metal elastic body by the symmetrical formation wheatstone bridge circuits of central shaft by photoetching process.
Described circular metal elastic body adopts stainless steel material or metallic titanium material to be inverse u shape by machining.
Described dielectric film is prepared from by one or more in silicon dioxide, alundum (Al2O3), silit, silicon nitride.
Add silicon, sulphur, one or more rare earth element that mass percent is less than 5% in described gallium arsenide, samaric sulfide, gallium nitride, reduce temperature-coefficient of electrical resistance, improve resistance temperature stability.
Described rare earth element comprise in yttrium, lanthanum, cerium, praseodymium, neodymium one or more.
Described lead pad is prepared into film by gold or aluminium cobalt alloy, manufactures four pads by photoetching process.
Described diaphragm is made up of silicon dioxide.
Compared with prior art, the beneficial effect that the utility model has is: because sensitive material have employed the one in gallium arsenide, samaric sulfide, gallium nitride, strain factor is greater than 10, improves the sensitivity of sensor.Add in sensitive material simultaneously mass percent be less than 5% silicon, sulphur and rare-earth yttrium, lanthanum, cerium, praseodymium, one or more in neodymium, reduce temperature-coefficient of electrical resistance, improve temperature stability, make its temperature-coefficient of electrical resistance (TCR) be not more than ± 0.001%FS/ DEG C.Sensitivity and the temperature-coefficient of electrical resistance of sensor are all better than like product, remain other premium properties of diaphragm pressure sensor simultaneously.
The main performance index of high performance thin film pressure transducer of the present utility model is as follows:
Measurement range: 0.1 ~ 300MPa synthesis precision: 0.05 ~ 0.2 grade
Medium temperature range :-250 DEG C ~ 300 DEG C sensitivity: >=10mV/V
Zero temperature drift :≤± 0.001%FS/ DEG C long-time stability :≤± 0.1%FS/
The utility model solves that existing diaphragm pressure sensor sensitivity is not high, and temperature performance is bad, is not suitable with under rugged surroundings and carries out to pressure the problem accurately measured.
Accompanying drawing explanation
Fig. 1 is the structural representation of high performance thin film pressure transducer of the present utility model.
Fig. 2 is that the strain resistor of high performance thin film pressure transducer of the present utility model arranges schematic diagram.
Embodiment
As shown in Figure 1, 2, high performance thin film pressure transducer of the present utility model, comprises a circular metal elastic body 1, and described circular metal elastic body 1 adopts stainless steel material or metallic titanium material to be inverse u shape by machining.Outside surface at the bottom of 1 glass, described circular metal elastic body is by mechanical lapping polishing, make its surfaceness reach Ra≤50nm, one or more adopting the method for vacuum coating to use in silicon dioxide, alundum (Al2O3), silit, silicon nitride on the surface through grinding and polishing prepare dielectric film 3.
Described dielectric film 3 adopts the method for vacuum coating uses gallium arsenide, samaric sulfide, a kind of in gallium nitride prepares described strain resistor 4.Gallium arsenide, samaric sulfide, gallium nitride serve as target, and this this material has good pressure-sensitive character, and strain factor is larger than nickel-chrome material and tantalum-nitride material, reaches 10, improve the sensitivity of sensor like this, and then the antijamming capability of raising sensor.
When gallium arsenide, samaric sulfide, the gallium nitride target described in making, add mass percent be less than 5% silicon, sulphur and rare-earth yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), one or more in neodymium (Nd), object reduces temperature-coefficient of electrical resistance, improve temperature stability, make its temperature-coefficient of electrical resistance (TCR) be not more than ± 0.001%FS/ DEG C, sensor can adapt to superhigh temperature, ultralow temperature media environment and medium temperature well and change large occasion.
After the film preparation of described strain resistor 4 is good, four sensitive resistances are formed by photoetching process, the dielectric film 3 of described circular metal elastic body 1 is pressed the symmetrical formation wheatstone bridge circuits of central shaft, and two interior distribution of resistance in wherein said wheatstone bridge circuits are in the outside surface center at the stress deformation position 2 of described circular metal elastic body 1; Two external resistances in described wheatstone bridge circuits are distributed in the outside surface edge placement at the stress deformation position 2 of described circular metal elastic body 1.When described circular metal elastic body 1 is stressed, described stress deformation position 2 produces deformation, its deformation is delivered to described strain resistor 4 by described dielectric film 3, the Wheatstone bridge resistance value of described strain resistor 4 is changed, it can export the electric signal proportional with pressure, can obtain corresponding pressure value by measuring this electric signal.
In the utility model patent, described lead pad 5 adopts the method for vacuum coating to be prepared into film by gold, or adopts aluminium cobalt alloy to be prepared into film, is formed by photoetching process.Cause the Wheatstone bridge resistance change of described strain resistor 4 and the electric signal that produces is drawn by described lead pad 5 stressed for described circular metal elastic body 1, also can access the working power of described Wheatstone bridge simultaneously.
In the utility model patent; described diaphragm 6 adopts the method for vacuum coating to be prepared into film by silicon dioxide; by photoetching process, described lead pad 5 is exposed; remainder retains; oxygen in described like this diaphragm 6 energy blocks air and steam, to the erosion of sensor, improve the reliability and stability of sensor.
The above; it is only better embodiment of the present utility model; should not be regarded as the restriction to the utility model scope; and the right that the utility model is advocated is not limited thereto; all personages being familiar with this field skill; according to the technology contents disclosed by the utility model, can think easily and equivalence change, all should fall in protection domain of the present utility model.
Claims (7)
1. a high performance thin film pressure transducer, it is characterized in that, comprise a circular metal elastic body (1), the method for described circular metal elastic body (1) upper employing vacuum coating is prepared successively dielectric film (3), strain resistor (4), lead pad (5) and diaphragm (6); Described strain resistor (4) adopts the one in gallium arsenide, samaric sulfide, gallium nitride to be prepared into film, forms four sensitive resistances upper by the symmetrical formation wheatstone bridge circuits of central shaft described circular metal elastic body (1) by photoetching process.
2. high performance thin film pressure transducer as claimed in claim 1, is characterized in that, described circular metal elastic body (1) adopts stainless steel material or metallic titanium material to be inverse u shape by machining.
3. high performance thin film pressure transducer as claimed in claim 1, it is characterized in that, described dielectric film (3) is prepared from by one or more in silicon dioxide, alundum (Al2O3), silit, silicon nitride.
4. high performance thin film pressure transducer as claimed in claim 1, it is characterized in that, add silicon, sulphur, one or more rare earth element that mass percent is less than 5% in described gallium arsenide, samaric sulfide, gallium nitride, reduce temperature-coefficient of electrical resistance, improve resistance temperature stability.
5. high performance thin film pressure transducer as claimed in claim 4, is characterized in that, described rare earth element comprise in yttrium, lanthanum, cerium, praseodymium, neodymium one or more.
6. high performance thin film pressure transducer as claimed in claim 1, is characterized in that, described lead pad (5) is prepared into film by gold or aluminium cobalt alloy, manufactures four pads by photoetching process.
7. high performance thin film pressure transducer as claimed in claim 1, it is characterized in that, described diaphragm (6) is made up of silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520619296.5U CN204944731U (en) | 2015-08-18 | 2015-08-18 | High performance thin film pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520619296.5U CN204944731U (en) | 2015-08-18 | 2015-08-18 | High performance thin film pressure transducer |
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| Publication Number | Publication Date |
|---|---|
| CN204944731U true CN204944731U (en) | 2016-01-06 |
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| CN201520619296.5U Active CN204944731U (en) | 2015-08-18 | 2015-08-18 | High performance thin film pressure transducer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021341A (en) * | 2015-08-18 | 2015-11-04 | 熊辉 | High-performance film pressure transducer |
| WO2018111135A1 (en) * | 2016-12-16 | 2018-06-21 | Общество С Ограниченной Ответственностью "Тонкопленочные Технологии" | Deformation sensor |
| CN111157165A (en) * | 2019-12-29 | 2020-05-15 | 西安中星测控有限公司 | MCS pressure sensor and preparation method thereof |
-
2015
- 2015-08-18 CN CN201520619296.5U patent/CN204944731U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021341A (en) * | 2015-08-18 | 2015-11-04 | 熊辉 | High-performance film pressure transducer |
| CN105021341B (en) * | 2015-08-18 | 2018-05-25 | 雷卫武 | Diaphragm pressure sensor |
| WO2018111135A1 (en) * | 2016-12-16 | 2018-06-21 | Общество С Ограниченной Ответственностью "Тонкопленочные Технологии" | Deformation sensor |
| CN111157165A (en) * | 2019-12-29 | 2020-05-15 | 西安中星测控有限公司 | MCS pressure sensor and preparation method thereof |
| CN111157165B (en) * | 2019-12-29 | 2022-03-18 | 西安中星测控有限公司 | MCS pressure sensor and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20161013 Address after: 102101, Beijing, Badaling economic and Technological Development Zone (Yanqing) two the Great Wall Road, building 26, East Unit Patentee after: Lei Weiwu Address before: 100176 Beijing City, Beijing economic and Technological Development Zone (Yizhuang) Tongji Road No. 5 Patentee before: Xiong Hui |
|
| DD01 | Delivery of document by public notice |
Addressee: Lei Weiwu Document name: Notification of Passing Examination on Formalities |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190428 Address after: 102101 No. 26 Building, No. 8 Fenggu 4th Road, Badaling Development Zone, Yanqing, Beijing Patentee after: BEIJING ZHONGHANG XINGSHENG MEASUREMENT AND CONTROL TECHNOLOGY CO., LTD. Address before: 102101 East Unit of Building 26, Second Great Wall Road, Badaling Economic and Technological Development Zone, Beijing (Yanqing) Patentee before: Lei Weiwu |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191014 Address after: 410331 A5, Changsha e center, No. 18, Xiang Tai Road, Liuyang, Hunan. Patentee after: Suno Alliance Technology Co., Ltd. Address before: 102101 No. 26 Building, No. 8 Fenggu 4th Road, Badaling Development Zone, Yanqing, Beijing Patentee before: BEIJING ZHONGHANG XINGSHENG MEASUREMENT AND CONTROL TECHNOLOGY CO., LTD. |