CN204455355U - A kind of kyropoulos sapphire crystal furnace of carrying out remote observation - Google Patents
A kind of kyropoulos sapphire crystal furnace of carrying out remote observation Download PDFInfo
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- CN204455355U CN204455355U CN201520105696.4U CN201520105696U CN204455355U CN 204455355 U CN204455355 U CN 204455355U CN 201520105696 U CN201520105696 U CN 201520105696U CN 204455355 U CN204455355 U CN 204455355U
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Abstract
A kind of kyropoulos sapphire crystal furnace of carrying out remote observation is disclosed, central controlled controller is carried out in setting, the seed crystal rotational system that seed rod rotates can be driven, the seed crystal lifting system that described seed rod moves up and down can be driven, for measuring the weighing system of crystal weight, for measuring the temp measuring system of temperature of cooling water, for realizing the vacuum system of long brilliant vacuum environment, for realizing the heating system of hot environment, carry out the display interface of parameter and information displaying, also comprise the sleeve on the bell being arranged on described sapphire crystal furnace, in described sleeve, camera chain is set, the lower end of described sleeve arranges sealing member, described sealing member comprises plane silica glass and rubber ring, described camera chain is connected with described controller.Adopt the program can observe sapphire crystal growth situation more easily, thus improve the success ratio of seeding.
Description
Technical field
The utility model relates to kyropoulos sapphire crystal growth technical field, particularly relates to a kind of kyropoulos sapphire crystal furnace of carrying out remote observation, is applicable to other similar field simultaneously.
Background technology
Sapphire is also known as white stone, that hardness is only second to adamantine crystalline material in the world, owing to having the high velocity of sound, excellent physics, machinery, chemistry and the infrared light transmission performance such as high temperature resistant, anticorrosive, high rigidity, high light transmittance, fusing point are high (2045 DEG C), the material that the fields such as microelectronics, aerospace, military project are badly in need of, by means of its high intensity, hardness, infrared transmission performance and thermal shock resistance always.This material is all widely used in fields such as optical window, semiconductor lighting, microwave devices, has become a kind of functional crystal material that consumption is only second to silicon single-crystal.Especially optical grade large-size sapphire material, because it has stable performance, the huge market demand, comprehensive utilization ratio and added value of product high, becomes in recent years research and development and industrialization focus both at home and abroad.The growth method of sapphire crystal is a lot, but only has kyropoulos could obtain the sapphire crystal of defect and the few large size high optical quality of stress, and the sapphire material of current 70% is manufactured by kyropoulos.
The general process of kyropoulos sapphire crystal manufacture is the seed crystal and melt contacts of catching a cold one, if the temperature at interface is lower than zero pour, then seed crystal starts growth, constantly grow up to make crystal, just need the temperature reducing melt gradually, simultaneously rotating crystal, to improve the temperature distribution of melt.Also slowly (or stage by stage) can carry crystal, to expand radiating surface.Crystal does not contact with sidewall of crucible in process of growth or at the end of growth, this greatly reduces the stress of crystal.But, when crystal and remaining melt depart from, usually larger thermal shocking can be produced.
The manufacture of kyropoulos sapphire crystal comprises the processes such as material, seeding, shouldering, isometrical and de-pot, annealing.Because growth temperature is up to 2100 degree, the control of sapphire crystal growth process can only be estimated at present, especially the seeding process of most critical, and whole process reaches 12 hours, and all needs naked eyes to be monitored process by view port.The view port of general sapphire furnace be a thickness about 20 the smooth disk of silica glass, because porthole distance liquid level is higher, be difficult to the situation clearly seeing crystal growth, and the position of view port is on bell, location comparison is high, is inconvenient to observe for a long time.Therefore, the yield rate of configuration on sapphire crystal of view port has great impact.
Summary of the invention
(1) technical problem that will solve
This patent devises a kind of kyropoulos sapphire crystal furnace of carrying out remote observation, bell arranges camera chain, carry out sapphire crystal imaging, the detailed information that naked eyes are difficult to observe can be obtained, thus improve the quality of imaging, ensure that the success ratio of seeding, simultaneously can remote observation and storage, facilitate operated by personnel.
(2) technical scheme
For achieving the above object, this patent provides a kind of kyropoulos sapphire crystal furnace of carrying out remote observation, central controlled controller is carried out in setting, the seed crystal rotational system that seed rod rotates can be driven, the seed crystal lifting system that described seed rod moves up and down can be driven, for measuring the weighing system of crystal weight, for measuring the temp measuring system of temperature of cooling water, for realizing the vacuum system of long brilliant vacuum environment, for realizing the heating system of hot environment, carry out the display interface of parameter and information displaying, described display interface, seed crystal rotational system, seed crystal lifting system, weighing system, temp measuring system, vacuum system, heating system is connected with described controller, also comprise the sleeve on the bell being arranged on described sapphire crystal furnace, described sleeve weld is on the opening of described bell, in described sleeve, camera chain is set, the lower end of described sleeve arranges sealing member, described sealing member comprises plane silica glass and rubber ring, described camera chain is connected with described controller.
(3) beneficial effect
As can be seen from technique scheme, the present invention has following beneficial effect:
1, this patent adopts polarity formula camera chain to carry out crystallography, can obtain the detailed information that naked eyes are difficult to observe, thus improve the quality of imaging, ensure that the success ratio of seeding;
2, this patent can provide remote observation function, can observe, greatly facilitate operated by personnel on local area network or internet to sapphire crystal situation.
3, this patent can realize the image storage of long brilliant process, provides data basis for staff carries out analysis.
Accompanying drawing explanation
Fig. 1 is the appearance schematic diagram of kyropoulos sapphire crystal furnace;
Fig. 2 is the structural representation of camera chain;
Fig. 3 is control texture block diagram.
Embodiment
Below in conjunction with specific embodiment, the utility model is further expanded description, but it is pointed out that the utility model structure required for protection is not limited to the concrete structure in embodiment and Figure of description.For other structure formations that those of ordinary skill in the art can know by inference, also belong within the present invention's scope required for protection.
Consult Fig. 1-3, a kind of kyropoulos sapphire crystal furnace of carrying out remote observation, arrange and carry out central controlled controller 1.Described controller 1 is set to industrial computer, also can be set to PLC.
Also comprise the seed crystal rotational system 4 that seed rod 13 can be driven to rotate, described seed crystal rotational system 4 drives described seed rod 13 to rotate, to ensure the homogeneity of crystal growth; Can drive the seed crystal lifting system 5 that described seed rod 13 moves up and down, described seed crystal lifting system 5 is upwards pulling crystal according to the stage of crystal growth, with the needs of satisfied growth; For measuring the weighing system 6 of crystal weight, described weighing system 6 can measure the crystal weight of described seed rod 13 end, to judge the growth phase of crystal; For measuring the temp measuring system 7 of temperature of cooling water, may be used for the temperature conditions judging thermal field; For realizing the vacuum system 8 of long brilliant vacuum environment, vacuum environment can ensure that not having gas in crystal growing process enters in crystalline material, prevents bubble and impurity; For realizing the heating system 9 of hot environment, comprising thermal insulation layer, heating member and crucible, realizing the hot environment of 2100 DEG C, by Al
2o
3melting sources, and maintain the hot environment required for long crystalline substance; Carry out the display interface 2 of parameter and information displaying, for operator provide the interface of information inquiry and instruction input.Described display interface 2, seed crystal rotational system 4, seed crystal lifting system 5, weighing system 6, temp measuring system 7, vacuum system 8, heating system 9 are connected with described controller 1.
Also comprise the sleeve 12 be arranged on the bell 14 of described sapphire crystal furnace, described sleeve 12 is welded on the opening of described bell 14, arranges camera chain 3 in described sleeve 12, and described camera chain 3 is connected with described controller 1.Described camera chain 3 can by the sapphire crystal growth situation clearly imaging in seeding, obtain sapphire crystal growth areas case more more detailed than naked eyes, and send described controller 1 to, can show in real time, remote transmission and storage, operator are by local area network or internet are observed sapphire crystal situation, greatly facilitate crystal to observe, thus improve the success ratio of seeding process.
The lower end of described sleeve 12 arranges sealing member, and described sealing member comprises plane silica glass 10 and rubber ring 11, can not destroy vacuum-sealing like this, ensures the growth of sapphire crystal.
In one embodiment, 10 stove sapphire crystal growths are carried out, result shows that imaging effect is desirable, curves such as finding the shape of sapphire crystal and outside burr can be known in seeding, thus in time technique is improved, effectively increase the success ratio of seeding and decrease the working strength of seeding personnel.
Claims (1)
1. one kind can be carried out the kyropoulos sapphire crystal furnace of remote observation, central controlled controller is carried out in setting, the seed crystal rotational system that seed rod rotates can be driven, the seed crystal lifting system that described seed rod moves up and down can be driven, for measuring the weighing system of crystal weight, for measuring the temp measuring system of temperature of cooling water, for realizing the vacuum system of long brilliant vacuum environment, for realizing the heating system of hot environment, carry out the display interface of parameter and information displaying, described display interface, seed crystal rotational system, seed crystal lifting system, weighing system, temp measuring system, vacuum system, heating system is connected with described controller, it is characterized in that: also comprise the sleeve on the bell being arranged on described sapphire crystal furnace, described sleeve weld is on the opening of described bell, in described sleeve, camera chain is set, the lower end of described sleeve arranges sealing member, described sealing member comprises plane silica glass and rubber ring, described camera chain is connected with described controller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520105696.4U CN204455355U (en) | 2015-02-13 | 2015-02-13 | A kind of kyropoulos sapphire crystal furnace of carrying out remote observation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520105696.4U CN204455355U (en) | 2015-02-13 | 2015-02-13 | A kind of kyropoulos sapphire crystal furnace of carrying out remote observation |
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| Publication Number | Publication Date |
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| CN204455355U true CN204455355U (en) | 2015-07-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520105696.4U Expired - Fee Related CN204455355U (en) | 2015-02-13 | 2015-02-13 | A kind of kyropoulos sapphire crystal furnace of carrying out remote observation |
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| CN (1) | CN204455355U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106544733A (en) * | 2016-10-18 | 2017-03-29 | 华东理工大学 | A kind of crystal growth intelligent machine system based on open network |
-
2015
- 2015-02-13 CN CN201520105696.4U patent/CN204455355U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106544733A (en) * | 2016-10-18 | 2017-03-29 | 华东理工大学 | A kind of crystal growth intelligent machine system based on open network |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150708 Termination date: 20160213 |