CN204289110U - Flat ultracapacitor - Google Patents
Flat ultracapacitor Download PDFInfo
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- CN204289110U CN204289110U CN201420539633.5U CN201420539633U CN204289110U CN 204289110 U CN204289110 U CN 204289110U CN 201420539633 U CN201420539633 U CN 201420539633U CN 204289110 U CN204289110 U CN 204289110U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Abstract
The utility model provides a kind of flat ultracapacitor, comprising: planar substrates (100), the insulating barrier (200) be formed on planar substrates (100), the several capacitor monomers (1) be formed on insulating barrier (200); Described capacitor monomer (1) comprises the first electrode (300) be formed on insulating barrier (200), the barrier film (400) be formed on the first electrode (300), the second electrode (500) be formed on barrier film (400), the electrolyte (700) that is formed at the insulating barrier (600) on the second electrode (500) and is positioned between first and second electrode (300,500); Several capacitor monomer (1) is stacked through being in series or in parallel to form capacitor unit (2); Several capacitor unit (2) is in series or in parallel to form flat ultracapacitor.
Description
Technical field
The utility model relates to a kind of flat capacitor device, particularly relates to a kind of flat ultracapacitor.
Background technology
Ultracapacitor (supercapacitor), be again double electric layer capacitor (Electrical Double-LayerCapacitor), electrochemical capacitor (Electrochemcial Capacitor, EC), gold electric capacity, farad capacitor, carry out energy storage by polarized electrolytic matter.It is a kind of electrochemical element, but chemical reaction does not occur in the process of its energy storage, and this thermal energy storage process is reversible, also just because of this ultracapacitor can repeated charge hundreds thousand of time.Ultracapacitor can be regarded as the porous electrode plate of two the reactionless activity suspended in the electrolyte, pole plate powers up, positive plate attracts the anion in electrolyte, negative plate attracts cation, in fact two capacitive accumulation layers are formed, the separated cation opened is near negative plate, and anion is near positive plate.
The operation principle of super capacitor implement body is as described below.When on two pole plates that applied voltage is added to ultracapacitor, the same with ordinary capacitor, the positive electrode of pole plate stores positive charge, negative plate stores negative electrical charge, under the electric field action that electric charge produces on the two-plate of ultracapacitor, contrary electric charge is formed with on interelectrode interface at electrolyte, with the internal electric field of BES, this positive charge and negative electrical charge are on two contact-making surfaces not between homophase, be arranged on contrary position with the compole short air gap of positive and negative charge, this charge distribution layers is called electric double layer, and therefore capacitance is very large.When between two-plate during the oxidation-reduction electrode current potential of electromotive force lower than electrolyte, on electrolyte interface, electric charge can not depart from electrolyte, ultracapacitor is normal operating conditions (being generally below 3V), when exceeding the oxidation-reduction electrode current potential of electrolyte as capacitor voltage at both ends, electrolyte will decompose, and be abnormal condition.Owing to discharging along with ultracapacitor, the electric charge on positive and negative pole plate is released by external circuit, the corresponding minimizing of the electric charge on the interface of electrolyte.This shows: the charge and discharge process of ultracapacitor is physical process all the time, does not have chemical reaction.Therefore performance is stable, is different from utilizing the storage battery of chemical reaction.
Ultracapacitor is structurally closely similar with electrolytic capacitor, and their main distinction is electrode material.The electrode of early stage ultracapacitor adopts carbon, the surface area of carbon electrode material is very large, the size of electric capacity depends on the distance of surface area and electrode, the high surface area of this carbon electrode adds very little electrode distance, make the capacitance of ultracapacitor can be very large, most of ultracapacitor can accomplish farad level, and generally capacitance scope can reach 1-5000F.
Ultracapacitor comprises bipolar electrode, electrolyte, collector, spacer four parts usually.Ultracapacitor utilizes the double electrical layers of active carbon porous electrode and electrolyte composition to obtain the capacitance of super large.In ultracapacitor, absorbent charcoal material is adopted to be made into porous electrode, filling electrolyte solution between relative two porous carbon electrodes simultaneously, when applying voltage at two ends, relative porous electrode assembles positron-electron respectively, and the negative ions in electrolyte solution will gather on the interface relative with positive/negative plate due to electric field action respectively, thus form two current collection layer.
The technological process of ultracapacitor is: batching → mixed slurry → electrode → cut-parts → assembling → fluid injection → activation → detection → packaging processed.
But make efficiency and the ease of use of current ultracapacitor still have much room for improvement.
Utility model content
The purpose of this utility model is to provide a kind of flat ultracapacitor, this flat ultracapacitor directly produces Capacitor banks in the enterprising parallel planes formula of large-area planar substrate, its consistency of performance is good, volume is little, lightweight, yields promotes, production efficiency is high, greatly reduce the production cost of ultracapacitor, and conveniently externally install and use.
For achieving the above object, the utility model provides a kind of flat ultracapacitor, comprising:
Planar substrates, the insulating barrier be formed on planar substrates, the several capacitor monomers be formed on insulating barrier;
Described capacitor monomer comprises the first electrode be formed on insulating barrier, the barrier film be formed on the first electrode, the second electrode be formed on barrier film, is formed at the insulating barrier on the second electrode and the electrolyte between first and second electrode;
Described first electrode comprises formation conductive layer on the insulating layer and the first material with carbon element layer be formed on conductive layer;
Described second electrode comprises the second material with carbon element layer be formed on barrier film and the metal level be formed on the second material with carbon element layer;
Several capacitor monomer is stacked through being in series or in parallel to form capacitor unit;
Several capacitor unit is in series or in parallel to form flat ultracapacitor.
The material of described planar substrates is pottery, and described planar substrates is divided into several base board unit, the area of area required for formation capacitor monomer of each base board unit.
It is described that to be positioned at insulating barrier on planar substrates with the material being positioned at the insulating barrier on the second electrode be polyimides.
Described conductive layer and the first material with carbon element layer are through pressurizeing, dry and making described first electrode; Described second material with carbon element layer and metal level are through pressurizeing, dry and making described second electrode.
Described conductive layer is directly formed by predetermined pattern on the insulating layer, or first forms metal level, then carries out patterned process to this metal level, forms the conductive layer of predetermined pattern; The material of described conductive layer is copper or aluminium.
Described first material with carbon element layer and the second material with carbon element layer are directly be coated with by predetermined pattern, or are first coated with one deck material with carbon element, then carry out patterned process to this material with carbon element layer, form material with carbon element layer and the material with carbon element layer of predetermined pattern; The material of described first material with carbon element layer and the second material with carbon element layer is activated carbon or carbon nano-tube.
Described barrier film is directly arrange by predetermined pattern coating, or is first coated with one deck barrier film, is then patterned process, forms the barrier film of predetermined pattern.
Described metal level for directly to be formed on the second material with carbon element layer by predetermined pattern, or first forms metal level on the second material with carbon element layer, then carries out patterned process to this metal level, forms the metal level of predetermined pattern; The material of described metal level is aluminium or copper.
Wherein, the mode by soaking or inject electrolyte adds electrolyte between first and second electrode.
The thickness of described planar substrates is 100um to 50mm; The described thickness being positioned at the insulating barrier of planar substrates is 10-15um; The thickness of described conductive layer is 10-20um; The thickness of described first material with carbon element layer is 0.21-0.23cm; The thickness of described barrier film is 15-25um; The thickness of described second material with carbon element layer is 0.21-0.23cm; The thickness of described metal level is 10-20um; The thickness of the described insulating barrier be positioned on the second electrode is 10-15um.
The beneficial effects of the utility model: the flat ultracapacitor of the utility model, planar substrates can carry out the making of multiple capacitor monomer in a procedure simultaneously, and structure is simple, is easy to realize.The consistency of performance is high, volume is little, lightweight, and Capacitor banks can be connected to form to the plurality of capacitor monomer simultaneously, facilitate the assembling of Capacitor banks self during follow-up use and externally install, thus being conducive to reducing costs.
Accompanying drawing explanation
In order to further understand feature of the present utility model and technology contents, refer to following about detailed description of the present utility model and accompanying drawing, but accompanying drawing only provide reference and explanation use, is not used for being limited the utility model.
In accompanying drawing,
Fig. 1 is the schematic cross-section of capacitor monomer in the flat ultracapacitor of the utility model;
Fig. 2 is the perspective view of capacitor unit in the flat ultracapacitor of the utility model;
Fig. 3 is the perspective view of Capacitor banks in the flat ultracapacitor of the utility model.
Embodiment
For further setting forth the technological means and effect thereof that the utility model takes, be described in detail below in conjunction with preferred embodiment of the present utility model.
Consult Fig. 1-3, the utility model provides a kind of flat ultracapacitor, and it comprises simultaneously: planar substrates 100, the insulating barrier 200 be formed on planar substrates 100, the several capacitor monomers 1 be formed on insulating barrier 200.
Described capacitor monomer 1 comprises the first electrode 300 be formed on insulating barrier 200, the barrier film 400 be formed on the first electrode 300, the second electrode 500 be formed on barrier film 400, is formed at the insulating barrier 600 on the second electrode 500 and the electrolyte 700 between first and second electrode 300,500.
Described first electrode 300 comprises the conductive layer 310 be formed on insulating barrier 200 and the first material with carbon element layer 320 be formed on conductive layer 310;
Described second electrode 500 comprises the second material with carbon element layer 510 be formed on barrier film 400 and the metal level 520 be formed on the second material with carbon element layer 510;
Several capacitor monomer 1 is stacked through being in series or in parallel to form capacitor unit 2;
Several capacitor unit 2 is in series or in parallel to form flat ultracapacitor.
The material of described planar substrates 100 is pottery, and described planar substrates 100 is divided into several base board unit 102, the area of area required for formation capacitor monomer 1 of each base board unit 102.
The described insulating barrier 200 be positioned on planar substrates is polyimides with the material of the insulating barrier 600 be positioned on the second electrode.
Described conductive layer 310 and the first material with carbon element layer 320 are through pressurizeing, dry and making described first electrode 300; Described second material with carbon element layer 510 and metal level 520 are through pressurizeing, dry and making described second electrode 500.
Described conductive layer 310 is directly formed by predetermined pattern on insulating barrier 200, or first forms metal level, then carries out patterned process to this metal level, forms the conductive layer 310 of predetermined pattern; The material of described conductive layer 310 is copper or aluminium.
Described first material with carbon element layer 320 and the second material with carbon element layer 510 are directly be coated with by predetermined pattern, or are first coated with one deck material with carbon element, then carry out patterned process to this material with carbon element layer, form material with carbon element layer 320 and the material with carbon element layer 510 of predetermined pattern; Described material with carbon element layer 320 is activated carbon or carbon nano-tube with the material of material with carbon element layer 510.
Described barrier film 400 is directly arrange by predetermined pattern coating, or is first coated with one deck barrier film, is then patterned process, forms the barrier film 400 of predetermined pattern.
Described metal level 520 is directly formed for pressing predetermined pattern on the second material with carbon element layer 510, or first forms metal level on the second material with carbon element layer 510, then carries out patterned process to this metal level, forms the metal level 520 of predetermined pattern; The material of described metal level 520 is aluminium or copper.
Wherein, add electrolyte 700 by the mode soaking or inject electrolyte between first and second electrode 300,500, hold electrolyte 700 for forming confined space between first and second electrode 300,500, this can be realized by prior art.
The thickness of described planar substrates 100 is 100um to 50mm; The described thickness being positioned at the insulating barrier 200 of planar substrates is 10-15um; The thickness of described conductive layer 310 is 10-20um; The thickness of described first material with carbon element layer 320 is 0.21-0.23cm; The thickness of described barrier film 400 is 15-25um; The thickness of described second material with carbon element layer 510 is 0.21-0.23cm; The thickness of described metal level 520 is 10-20um; The thickness of the described insulating barrier 600 be positioned on the second electrode is 10-15um.
It is worth mentioning that, flat ultracapacitor of the present utility model can pass through cutting planes substrate 100, and form the secondary substrate of several predetermined dimension, substrate comprises several base board unit each time, and it forms a Capacitor banks.For traffic or the means of transportation that can hold planar substrates 100, such as vehicle, aircraft, tractor, fork truck etc., directly can make a Capacitor banks by whole planar substrates 100, do not need cutting.For traffic or the means of transportation that can not hold planar substrates 100, then can according to the size needs that can hold, planar substrates is cut, form the secondary substrate of several predetermined dimension, each time substrate forms a Capacitor banks, then the Capacitor banks of several substrates is electrically connected again, is installed on the vehicles.Planar substrates will cut by base board unit relative to prior art by this, and being formed one by one as the capacitor unit 2 of base board unit size, is also improve very large production efficiency, and is convenient to follow-up use installation.
Above-mentioned patterned process, can adopt existing technique to form insulating barrier 200, the insulating barrier 600 of predetermined pattern, such as micro-shadow, etch process etc. as required.
Above-mentioned formation conductive layer 310 or metal level 520, can adopt existing technique to process, such as chemical vapour deposition (CVD) or evaporation etc.
The flat ultracapacitor of the utility model, can carry out the making of multiple capacitor monomer on planar substrates in a procedure simultaneously, and structure is simple, is easy to realize.The consistency of performance is high, volume is little, lightweight, and Capacitor banks can be connected to form to the plurality of capacitor monomer simultaneously, facilitate the assembling of Capacitor banks self during follow-up use and externally install, thus being conducive to reducing costs.
The above; for the person of ordinary skill of the art; can make other various corresponding change and distortion according to the technical solution of the utility model and technical conceive, and all these change and be out of shape the protection range that all should belong to the utility model claim.
Claims (10)
1. a flat ultracapacitor, it is characterized in that, comprising: planar substrates (100), the insulating barrier (200) be formed on planar substrates (100), the several capacitor monomers (1) be formed on insulating barrier (200);
Described capacitor monomer (1) comprises the first electrode (300) be formed on insulating barrier (200), the barrier film (400) be formed on the first electrode (300), the second electrode (500) be formed on barrier film (400), the electrolyte (700) that is formed at the insulating barrier (600) on the second electrode (500) and is positioned between first and second electrode (300,500);
Described first electrode (300) comprises the conductive layer (310) be formed on insulating barrier (200) and the first material with carbon element layer (320) be formed on conductive layer (310);
Described second electrode (500) comprises the second material with carbon element layer (510) be formed on barrier film (400) and the metal level (520) be formed on the second material with carbon element layer (510);
Several capacitor monomer (1) is stacked through being in series or in parallel to form capacitor unit (2);
Several capacitor unit (2) is in series or in parallel to form flat ultracapacitor.
2. flat ultracapacitor as claimed in claim 1, it is characterized in that, the material of described planar substrates (100) is pottery, described planar substrates (100) is divided into several base board unit (102), the area of area required for formation capacitor monomer (1) of each base board unit (102).
3. flat ultracapacitor as claimed in claim 1, is characterized in that, described in be positioned at insulating barrier (200) on planar substrates with the material of the insulating barrier (600) be positioned on the second electrode be polyimides.
4. flat ultracapacitor as claimed in claim 1, is characterized in that, described conductive layer (310) and the first material with carbon element layer (320) are through pressurizeing, dry and making described first electrode (300); Described second material with carbon element layer (510) and metal level (520) are through pressurizeing, dry and making described second electrode (500).
5. flat ultracapacitor as claimed in claim 1, it is characterized in that, described conductive layer (310) is directly above formed by predetermined pattern at insulating barrier (200), or first form metal level, then patterned process is carried out to this metal level, form the conductive layer (310) of predetermined pattern; The material of described conductive layer (310) is copper or aluminium.
6. flat ultracapacitor as claimed in claim 1, it is characterized in that, described first material with carbon element layer (320) and the second material with carbon element layer (510) are directly be coated with by predetermined pattern, or be first coated with one deck material with carbon element, then patterned process is carried out to this material with carbon element layer, form the first material with carbon element layer (320) of predetermined pattern and the second material with carbon element layer (510); Described first material with carbon element layer (320) is activated carbon or carbon nano-tube with the material of the second material with carbon element layer (510).
7. flat ultracapacitor as claimed in claim 1, it is characterized in that, described barrier film (400) is directly arrange by predetermined pattern coating, or is first coated with one deck barrier film, then be patterned process, form the barrier film (400) of predetermined pattern.
8. flat ultracapacitor as claimed in claim 1, it is characterized in that, described metal level (520) is for pressing predetermined pattern directly in the upper formation of the second material with carbon element layer (510), or first form metal level on the second material with carbon element layer (510), then patterned process is carried out to this metal level, form the metal level (520) of predetermined pattern; The material of described metal level (520) is aluminium or copper.
9. flat ultracapacitor as claimed in claim 1, is characterized in that, adds electrolyte by the mode soaking or inject electrolyte between first and second electrode (300,500).
10. flat ultracapacitor as claimed in claim 1, is characterized in that, the thickness of described planar substrates (100) is 100um to 50mm; The described thickness being positioned at the insulating barrier (200) of planar substrates is 10-15um; The thickness of described conductive layer (310) is 10-20um; The thickness of described first material with carbon element layer (320) is 0.21-0.23cm; The thickness of described barrier film (400) is 15-25um; The thickness of described second material with carbon element layer (510) is 0.21-0.23cm; The thickness of described metal level (520) is 10-20um; The thickness of the described insulating barrier (600) be positioned on the second electrode is 10-15um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420539633.5U CN204289110U (en) | 2014-09-18 | 2014-09-18 | Flat ultracapacitor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420539633.5U CN204289110U (en) | 2014-09-18 | 2014-09-18 | Flat ultracapacitor |
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| CN204289110U true CN204289110U (en) | 2015-04-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282443A (en) * | 2014-09-18 | 2015-01-14 | 鸿源控股有限公司 | Flat-plate-type super capacitor |
| CN106487047A (en) * | 2015-08-26 | 2017-03-08 | 中国电力科学研究院 | Electric power system in conjunction with the low-power consumption on-line monitoring equipment of efficient ultracapacitor |
-
2014
- 2014-09-18 CN CN201420539633.5U patent/CN204289110U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282443A (en) * | 2014-09-18 | 2015-01-14 | 鸿源控股有限公司 | Flat-plate-type super capacitor |
| CN106487047A (en) * | 2015-08-26 | 2017-03-08 | 中国电力科学研究院 | Electric power system in conjunction with the low-power consumption on-line monitoring equipment of efficient ultracapacitor |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20170124 Address after: 518000 Guangdong, China, Futian District Hua Fu Street revitalization of the road SED Industrial Zone, building 6, west of building 405 Patentee after: SHENZHEN HONGYUAN BODE NEW ENERGY TECHNOLOGY DEVELOPMENT CO., LTD. Address before: 518000 Guangdong City, Futian District province Zhenxing road SED District, building 6, building, West District, B Patentee before: Hongyuan Holdings Ltd. |