CN204029811U - A kind of radiation detector crosstalk isolation and radiation hardened dot structure - Google Patents
A kind of radiation detector crosstalk isolation and radiation hardened dot structure Download PDFInfo
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Abstract
The utility model relates to a kind of radiation detector crosstalk isolation and radiation hardened dot structure, comprises electrode field plate, P trap, P+ region, insulating dielectric materials, N-type body silicon, N-type MOSFET, P type MOSFET, back electrode, field plate metal electrode, P+ extraction electrode, connects field-plate trench.According to the radiation detector dot structure with air gap and trench field plate of the present utility model, air gap isolation structure is there is between top layer silicon MOSFET and target field plate, this structure can effectively stop bottom potential to the expansion of top layer silicon MOSFET tagma, produces TID effect after radiation-screening ionization in dielectric; In circuit, MOSFET is surrounded by the groove silicon be connected with field plate electrode, and this structure can reduce parasitic capacitance between circuit and transducer further, effectively crosstalk between shielding two parts of signals.
Description
Technical field
The utility model relates to a kind of radiation detector crosstalk isolation and radiation hardened dot structure.
Background technology
Radiation detector be by trapping charged particles and radiating particle incident path around the non equilibrium carrier that produces of silicon atom generation ionization reaction carry out detection zone charged particle.The key parameter weighing its performance comprises resolution, signal to noise ratio, reading speed and radiation hardened ability etc.For improving signal to noise ratio and the radiation hardened ability of radiation detector further, and improving charge collection efficiency and acquisition time, needing to study the structure such as element sensor and transfer tube, improvement project is provided to charge-trapping mechanism and performance impact.
Silicon-on-insulator (Silicon On Insulator, SOI) pixel detector is integrated on one chip with sub-micron compensated semiconductor field effect transistor circuitry by element sensor.Its feature is that size is little, and resolution is high and quality is low.And relative conventional bulk silicon pixel detector, need not (Bonding on) " binding " bonding packaging technology, complex manufacturing technology degree and cost there is larger improvement.But SOI pixel detector exists some row problem, such as back-gate effect in real work, total radiation dose effect produces hole trap burying in oxygen, and the crosstalk etc. between circuit and transducer.
In article " F.F.Khalid; G.W.Deptuch; A.Shenai; et al.Monolithic Active Pixel Matrix with Binary Counters (MAMBO) ASIC.Nuclear Science Symposium Conference Record (NSS/MIC); 2010IEEE.2010; 1544-1550. ", nested well structure (Nested well structure NWS) is proposed, this structure can crosstalk between buffer circuit and transducer, but this structure is for avoiding back-gate effect, P well structure must comprise circuit part completely, can not independent optimization.Article " T.Miyoshi, Recent progress in development of SOI pixel detectors.Nuclear Science Symposium Conference Record (NSS/MIC), 2010IEEE.2010, 1885-1888. " silicon on double insulator (DSOI) dot structure is proposed, this structure comprises horizontal field plate burying in oxide structure, and this field plate current potential is adjustable, this structure also can well crosstalk between buffer circuit and transducer, but but because burying oxide structure under radiation condition, introduce a large amount of hole trap, thus produce total ionizing dose (Total Ionizing Dose-TID) effect.Publication " application number: CN200980133383; Cheng Luoyun; the fleet plough groove isolation structure with air gap, the cmos image sensor adopting this fleet plough groove isolation structure and manufacturer thereof " gives air gap fleet plough groove isolation structure, but this structure is mainly isolation structure between pixel and pixel, and the dark current that the air gap existed can avoid medium of oxides to produce affects main picture element signal, uncorrelated with the problem that will solve in this patent.Thus, current needing badly to solve in SOI radiation detector pixel crosstalk and radiation TID effect between circuit and transducer.
Utility model content
The purpose of this utility model is that providing a kind of reduces crosstalk between circuit and transducer further, and a kind of radiation detector crosstalk isolation of radiation-screening TID effect and radiation hardened dot structure.The purpose of this utility model is achieved in that
Radiation detector crosstalk isolation and radiation hardened dot structure, comprise electrode field plate, P trap, P+ region, insulating dielectric materials, N-type body silicon, N-type MOSFET, P type MOSFET, back electrode, field plate metal electrode, P+ extraction electrode, connects field-plate trench; Above electrode field plate, two are arranged on the both sides of P+ extraction electrode to the N-type MOSFET cooperatively interacted and P type MOSFET, and often couple of N-type MOSFET is provided with the both sides of P type MOSFET the field plate metal electrode be connected with electrode field plate; Electrode field plate, N-type MOSFET, P type MOSFET, P+ extraction electrode, field plate metal electrode are encapsulated in insulating dielectric materials jointly; Below insulating dielectric materials, center is the P+ region be connected with P+ extraction electrode, and both sides, P+ region are P trap, and P+ region and P trap are packaged together by N-type body silicon; Between electrode field plate and MOSFET, have air gap, air gap does not contact with the raceway groove of MOSFET, and air gap is no more than the spacing of border farthest of source electrode and drain electrode along the width of the horizontal direction of MOSFET source electrode and drain electrode line; Air gap is greater than the width of MOSFET along the vertical line direction of MOSFET source electrode and drain electrode line; The flat contact material of air gap is insulating dielectric materials.
Insulating dielectric materials is silicon nitride or silica.
The flat shape of air gap is ellipse, rectangle or circle.
The beneficial effects of the utility model are:
According to the radiation detector dot structure with air gap and trench field plate of the present utility model, air gap isolation structure is there is between top layer silicon MOSFET and target field plate, this structure can effectively stop bottom potential to the expansion of top layer silicon MOSFET tagma, produces TID effect after radiation-screening ionization in dielectric; In circuit, MOSFET is surrounded by the groove silicon be connected with field plate electrode, and this structure can reduce parasitic capacitance between circuit and transducer further, effectively crosstalk between shielding two parts of signals.
Accompanying drawing explanation
Fig. 1 is the nested trap dot structure proposed;
Fig. 2 is silicon dot structure on the double insulator that proposed;
Fig. 3 is the dot structure that the utility model proposes;
Fig. 4 is the schematic diagram of the concrete steps of the dot structure illustrated according to the utility model embodiment;
Fig. 5 is the schematic diagram of the concrete steps of the dot structure illustrated according to the utility model embodiment;
Fig. 6 is the schematic diagram of the concrete steps of the dot structure illustrated according to the utility model embodiment;
Fig. 7 is the schematic diagram of the concrete steps of the dot structure illustrated according to the utility model embodiment;
Fig. 8 is the schematic diagram of the concrete steps of the dot structure illustrated according to the utility model embodiment;
Fig. 9 is the schematic diagram of the concrete steps of the dot structure illustrated according to the utility model embodiment;
Figure 10 is the schematic top plan view of a kind of groove of the present utility model layout within the pixel.
Figure 11 is the schematic top plan view of a kind of groove of the present utility model layout within the pixel.
Figure 12 is the schematic top plan view of a kind of groove of the present utility model layout within the pixel.
Figure 13 is the schematic top plan view of a kind of groove of the present utility model layout within the pixel.
Figure 14 is that the utility model is with the threshold voltage deviator comparison diagram of N-type MOSFET in silicon dot structure on nested trap dot structure, double insulator under total radiation dose effect;
Figure 15 is that the utility model is with the threshold voltage deviator comparison diagram of P type MOSFET in silicon dot structure on nested trap dot structure, double insulator under total radiation dose effect;
Figure 16 be the utility model with circuit in silicon dot structure on nested trap dot structure, double insulator with parasitic capacitance comparison diagram between sensor electrode.
Embodiment
Below in conjunction with rear accompanying drawing, the utility model is described further.
Radiation detector crosstalk isolation and radiation hardened dot structure, comprise air gap, is formed on electrode field plate, is formed in the below of electric circuit metal oxide semiconductor field effect transistor.The flat contact material of air gap is silicon oxide dielectric material.Gap structure is when depression angle, and figure can be rectangle, circular, the oval gap structure waiting oxide medium to surround; The step forming gap structure can comprise: adopt silicon-on-insulator epitaxial wafer, generates certain thickness insulating medium layer, adopts etching mode, dielectric is etched to heterogeneous texture; Then the silicon-on-insulator epitaxial wafer with another top layer silicon continuous distribution or discontinuous distribution docks low-temperature bonding; When preparing another silicon-on-insulator epitaxial wafer, if top layer silicon continuous distribution, then follow-up needs adopts the technology such as PN junction or shallow trench to isolate the mos field effect transistor generated; After two parts silicon-on-insulator wafer bonding, gap structure is between the top layer silicon of two parts silicon-on-insulator, and two parts top layer silicon supports by insulating dielectric materials.After bonding process, remove and support silicon and insulating dielectric materials, preparing the silicon layer periphery of mos field effect transistor, etching one circle shallow ditch groove structure, and extension heavy doping filled with silicon material, thus extraction electrode field-plate trench, make trench field plate surround the mos field effect transistor of circuit.Be positioned at the gap structure below electric circuit metal oxide semiconductor field effect transistor raceway groove, bottom potential can be effectively stoped to produce the expansion of electromotive force and the back-gate effect that causes, can also avoid radiation ionization total dose effect in dielectric, produce a large amount of hole charge, thus the threshold voltage affecting N-type or P-type mos field-effect transistor change; Trench field plate structure can available protecting electric circuit metal oxide semiconductor field effect transistor, reduces circuit further with parasitic capacitance between transducer, crosstalk between pad electrode, improves radiation detector probe radiation reinforcement ability and detectivity.Therefore, in fact, the fields such as business, military, space flight can be applied to according to air gap isolation structure of the present utility model.
Target of the present utility model is to provide the SOI radiation detector dot structure and manufacture method thereof with such air gap isolation and trench field plate structure.In particular to being space below semiconductor field effect transistor channel part in pixel top layer silicon circuit, there is not the dielectric materials such as silica; And surrounded by silicon trench around semiconductor field effect transistor, drawn by electrode, as control of Electric potentials field plate.Be mainly used in particle detector, radiation detector.
A kind of radiation detector crosstalk isolation and radiation hardened dot structure, comprising: air gap, be formed on electrode field plate, be formed in the below of electric circuit metal oxide semiconductor field effect transistor.The flat contact material of air gap is silicon oxide dielectric material.Gap structure, the flat contact material of air gap can be the insulant dielectric materials such as silicon nitride, or multilayer dielectricity.Gap structure below mos field effect transistor, but does not contact with the channel part of mos field effect transistor.Gap structure is below mos field effect transistor, but transverse width is no more than the source electrode of mos field effect transistor and the spacing of border farthest of drain electrode.Gap structure will exceed the width of mos field effect transistor in the third dimension direction of plane, the channel part namely ensureing mos field effect transistor not with medium of oxides material.Gap structure is when depression angle, and figure can be rectangle, circular, the oval gap structure waiting oxide medium to surround.Gap structure height can be mediated according to process conditions.Gap structure can be formed by silicon-on-insulator bonding technology.
The step forming gap structure can comprise: adopt silicon-on-insulator epitaxial wafer, generates certain thickness insulating medium layer, adopts etching mode, dielectric is etched to heterogeneous texture; Then the silicon-on-insulator epitaxial wafer with another top layer silicon continuous distribution or discontinuous distribution docks low-temperature bonding.When growing insulating medium layer, this material can be silica, or the stacked dielectric material of a silica silicon nitride, or other insulating dielectric materials.In the process forming etching mask, etching can make SI semi-insulation medium be etched completely away, and spills top layer silicon; Other SI semi-insulation media retain.Etching can make SI semi-insulation medium not be etched completely away, and does not spill top layer silicon; Other SI semi-insulation media retain.In the process forming etching mask, etching makes SI semi-insulation medium not etch completely completely or, and its lateral etches size is greater than the channel length of mos field effect transistor; Ensure that mos field effect transistor raceway groove does not contact dielectric.When preparing another silicon-on-insulator epitaxial wafer, if top layer silicon continuous distribution, then follow-up needs adopts the technology such as PN junction or shallow trench to isolate the mos field effect transistor generated.Etching can make SI semi-insulation medium not be etched completely away, and does not spill top layer silicon; Other SI semi-insulation media retain.When preparing another silicon-on-insulator epitaxial wafer, top layer silicon can be phase co-altitude with insulating dielectric materials upper surface.When preparing another silicon-on-insulator epitaxial wafer, top layer silicon can be non-equal height with insulating dielectric materials upper surface.When preparing another silicon-on-insulator epitaxial wafer, if the discontinuous distribution of top layer silicon, then every partly for needing the mos field effect transistor be connected in independence or circuit.If top layer silicon continuous distribution, then every partly for needing the mos field effect transistor be connected in independence or circuit.Continuous or the discontinuous distribution of top layer silicon, the lateral dimension of its silicon materials is greater than air gap and etches the lateral dimension stayed; Ensure that insulating dielectric materials can physical support MOSFET device.After two parts silicon-on-insulator wafer bonding, gap structure is between the top layer silicon of two parts silicon-on-insulator, and two parts top layer silicon supports by insulating dielectric materials.After bonding process, remove and support silicon and insulating dielectric materials, preparing the silicon layer periphery of mos field effect transistor, etching one circle shallow ditch groove structure, and extension heavy doping filled with silicon material, thus extraction electrode field-plate trench, make trench field plate surround the mos field effect transistor of circuit.When extension heavily doped silicon material is filled, ensure that the doping type of filling silicon is identical with the doping type of electrode field plate; Groove structure surrounds metal oxide semiconductor field effect transistor region, and groove can be rectangles encompass structure, and is divided into the encirclement structure of outer rectangle and interior rectangle, and two parts distinguish extraction electrode and short circuit; Groove can be the encirclement structure of straight flange or arc or polygon combination, and this encirclement structure is divided into outer encirclement and interior encirclement, and two parts distinguish extraction electrode and short circuit; Groove can be the encirclement structure of outer rectangle and interior rectangle, and these two parts surround structure by the clearance position UNICOM in metal oxide semiconductor field effect transistor region together, can distinguish extraction electrode and short circuit; Groove can be the encirclement structure of straight flange or arc or polygon combination, and these two parts surround structure by the clearance position UNICOM in metal oxide semiconductor field effect transistor region together, can distinguish extraction electrode and short circuit.
According to one side of the present utility model, provide a kind of radiation detector crosstalk isolation and radiation hardened dot structure to comprise: transducer, electronic circuitry part and isolation structure between the two.Wherein sensor part separation structure comprises: N-type extension 305, P trap 302, P+ region 303, back electrode 308 and P+ electrode 303.Electronic circuitry part is made up of mos field effect transistor (Metal Oxide Semiconductor Field Effect Transistor MOSFET) 306 and 307, and the electrode of MOSFET306 and 307 forms line with sensor electrode 310 according to physical circuit layout.Isolation structure comprises: field plate electrode 301, field-plate trench structure 311, the gap structure 312 between field plate and MOSFET.Radiation detector crosstalk isolation and the radiation hardened dot structure feature of this patent proposition are specific as follows:
Air gap 312, is formed on field plate electrode 301, is formed in the below of electric circuit metal oxide semiconductor field effect transistor MOSFET.The flat contact material of air gap 312 is silicon oxide dielectric material 304.
The flat contact material of air gap 312 can be the insulant dielectric materials such as silicon nitride, or multilayer dielectricity;
Air gap 312 structure below MOSFET306/307, but does not contact with the channel part of MOSFET306/307;
Air gap 312 structure is below MOSFET306/307, but transverse width is no more than the source electrode of MOSFET and the spacing of border farthest of drain electrode;
Air gap 312 structure will more than the width of MOSFET306/307 in the third dimension direction of plane, the channel part namely ensureing MOSFET306/307 not with medium of oxides material.
Air gap 312 structure is when depression angle, and figure can be rectangle, circular, oval, air gap 312 structure that polygon etc. oxide medium 304 surrounds, and specifically can determine according to the actual breadth length ratio design of MOSFET306/307;
Air gap 312 structure height can be mediated according to process conditions.
Air gap 312 structure can be formed by SOI bonding technology;
The step forming air gap 312 structure can comprise: adopt SOI epitaxial wafer, generates certain thickness insulating medium layer 401, adopts etching mode, dielectric is etched to heterogeneous texture 504; Then the SOI epitaxial wafer with another top layer silicon continuous distribution or discontinuous distribution docks low-temperature bonding;
When growing insulating medium layer 504, this material can be silica, or the stacked dielectric material of a silica silicon nitride, or other insulating dielectric materials;
In the process forming etching mask, etching can make SI semi-insulation medium 504 be etched completely away, and spills top layer silicon 506; Other SI semi-insulation media retain;
In the process forming etching mask, etching can make SI semi-insulation medium 504 not be etched completely away, and does not spill top layer silicon 506; Other SI semi-insulation media retain;
In the process forming etching mask, etching makes SI semi-insulation medium not etch completely completely or, and its lateral etches size is greater than the channel length of MOSFET306/307; Ensure that MOSFET306/307 raceway groove does not contact dielectric.
When preparing another SOI epitaxial wafer, if top layer silicon 603 continuous distribution, then follow-up needs adopts the technology such as PN junction or shallow trench to isolate the MOSFET generated;
When preparing another SOI epitaxial wafer, top layer silicon 603 can be phase co-altitude with insulating dielectric materials 602 upper surface;
When preparing another SOI epitaxial wafer, top layer silicon 603 can be non-equal height with insulating dielectric materials 602 upper surface;
When preparing another SOI epitaxial wafer, if the discontinuous distribution of top layer silicon 603, then every partly for needing the MOSFET306/307 be connected in independence or circuit;
When preparing another SOI epitaxial wafer, if top layer silicon 603 continuous distribution, then every partly for needing the MOSFET306/307 be connected in independence or circuit;
When preparing another SOI epitaxial wafer, the continuous or discontinuous distribution of top layer silicon 603, the lateral dimension of its silicon materials is greater than air gap 808 and etches the lateral dimension stayed; Ensure that insulating dielectric materials can physical support MOSFET806/807 device;
After two parts SOI wafer bonding, air gap 808 structure is between the top layer silicon of two parts SOI, and two parts top layer silicon supports by insulating dielectric materials 804.
After bonding process, remove and support silicon 601 and insulating dielectric materials 602, at the silicon layer periphery of preparation MOSFET906/907, etching one circle shallow trench 911 structure, and extension heavy doping filled with silicon material, make it be connected with field plate electrode 901, thus draw silicon materials electrode field plate 901;
Groove 911 structure is at regular intervals with MOSFET906/907 structure, and this spacing is determined jointly by pixel size and processing line wide-space size of reaching the standard grade;
When extension heavily doped silicon material is filled, ensure that the doping type of filling silicon 911 is identical with the doping type of electrode field plate 901;
Groove 1004 structure surrounds MOSFET region 1002, and groove 1004 can be rectangles encompass structure, and is divided into the encirclement structure of outer rectangle and interior rectangle, and two parts distinguish extraction electrode and short circuit;
Groove 1104 structure surrounds MOSFET region 1102, and groove 1104 can be the encirclement structure of straight flange or arc or polygon combination, and this encirclement structure is divided into outer encirclement and interior encirclement, and two parts distinguish extraction electrode and short circuit;
Groove 1204 structure surrounds MOSFET region 1202, and groove 1204 can be the encirclement structure of outer rectangle and interior rectangle, and these two parts surround structure by the clearance position UNICOM of MOSFET region 1202 together, can distinguish extraction electrode and short circuit;
Groove 1304 structure surrounds MOSFET region 1302, and groove 1304 can be the encirclement structure that straight flange or arc or polygon combine, and these two parts surround structure can by the clearance position UNICOM of MOSFET region 1302 together, difference extraction electrode short circuit.
According to another aspect of the present utility model, provide the pixelated radiation detector manufactured by above method.
Below, one exemplary embodiment of the present utility model will be described with reference to the drawings.If make theme of the present utility model wordy to the description of known function or structure, then omitted.And in order to the object clearly illustrated, in accompanying drawing, the part of crucial point is simplified or amplifies.Herein, the position in feature layer or region can represent relative position, but actual conditions are not necessarily identical with ratio in schematic diagram.
Fig. 1 gives the nested trap dot structure proposed.This structure comprises N trap 101, P trap 102, P+ region 103, insulating dielectric materials 104, N-type body silicon 105, N-type (or P type) MOSFET106, P type (or N-type) MOSFET107, back electrode 108, the parts such as N+ region 109, N+ metal electrode 110, P+ extraction electrode 111.
Fig. 2 gives silicon dot structure on the double insulator that proposed.This structure comprises electrode field plate 201, P trap 202, P+ region 203, insulating dielectric materials 204, N-type body silicon 205, N-type (or P type) MOSFET206, P type (or N-type) MOSFET207, back electrode 208, the parts such as field plate metal electrode 209, P+ extraction electrode 210.
Fig. 3 gives the dot structure with air gap that the utility model proposes.This structure comprises electrode field plate 301, P trap 302, P+ region 303, insulating dielectric materials 304, N-type body silicon 305, N-type (or P type) MOSFET306, P type (or N-type) MOSFET307, back electrode 308, field plate metal electrode 309, P+ extraction electrode 310, connects the parts such as field-plate trench 311.
Fig. 4 is the manufacturing step schematic diagrames of the pixel illustrated according to the utility model embodiment to 9.Fig. 4 is illustrated to 9 and pays close attention in pixel circuit with the isolation structure between transducer, and the MOSFET layout therefore in figure in associated sensor or circuit, is all only signal effect.
According to the manufacturing step of the dot structure with air gap of the present utility model, as shown in Figure 4, in the top layer silicon 401 of silicon on insulator, mask etch goes out P+ injection zone 406, forms P+ region 403, and inject P trap 402 region after the annealing of P+ ion implantation.
Then, as shown in Figure 5, deposit one deck and 404 same dielectric media 504 in top layer silicon 501, after surface planarisation, carry out mask etch, etch non-homogeneous dielectric structure 504, and etch-hole 506 can expose field plate structure 501, also field plate structure 501 can not be exposed.
Then, as shown in Figure 6, another preparation one silicon-on-insulator epitaxial wafer, its top layer silicon 603 can be discontinuous state, and upper surface is equal with dielectric 602.Here require that top layer silicon 603 layout will be thought corresponding with etch-hole 506, ensure that top layer silicon 603 does not contact with dielectric structure 504 as the part of raceway groove.
Then, as shown in Figure 7, after silicon epitaxial wafer 605 overturns on the silicon-on-insulator of preparation, after aiming at silicon-on-insulator epitaxial wafer 505, carry out low-temperature bonding, and silicon 706,707 is with between field plate, there is gap structure 708.After technique to be bonded completes, remove and support silicon 601, and planarization, make silicon 706 and 707 spill surface.
Then, as shown in Figure 8, after mask etch, groove structure is etched, and this groove through yard plate structure, extension heavily doped silicon material, is surrounded top layer silicon 806 and 807.And the concrete graphic structure of concrete mask can have more space size shared by actual MOSFET and determine.Afterwards to the planarization of extension heavily doped silicon, make its upper surface equal with 807 with top layer silicon 806.Carry out N-type and p type impurity injection again, form top layer silicon 806 and the PN needed for 807MOSFET.
Then, as shown in Figure 9, after heat growth gate oxide, depositing polysilicon again, after etching away redundance, after mask etch, get the electrode contact hole of top layer silicon MOSFET906 and 907, in field-plate trench 911 structure and P+ region, metal electrode is drawn in etching simultaneously.Afterwards at deposit insulating dielectric materials 904, back metallization.These techniques are normally known in the art, so details is omitted.
Figure 10 is the schematic top plan view of the utility model groove layout within the pixel to 13.Groove 1004 structure surrounds MOSFET region 1002, and groove 1004 can be rectangles encompass structure, and is divided into the encirclement structure of outer rectangle and interior rectangle, and two parts distinguish extraction electrode and short circuit; Groove 1104 structure surrounds MOSFET region 1102, and groove 1104 can be the encirclement structure of straight flange or arc or polygon combination, and this encirclement structure is divided into outer encirclement and interior encirclement, and two parts distinguish extraction electrode and short circuit; Groove 1204 structure surrounds MOSFET region 1202, and groove 1204 can be the encirclement structure of outer rectangle and interior rectangle, and these two parts surround structure by the clearance position UNICOM of MOSFET region 1202 together, can distinguish extraction electrode and short circuit; Groove 1304 structure surrounds MOSFET region 1302, and groove 1304 can be the encirclement structure that straight flange or arc or polygon combine, and these two parts surround structure can by the clearance position UNICOM of MOSFET region 1302 together, difference extraction electrode short circuit.
Figure 14 and 15 is that the utility model is with the threshold voltage deviator comparison diagram under total radiation dose effect of N-type and P type MOSFET in silicon dot structure on nested trap dot structure, double insulator.As seen from the figure, the utility model proposes the impact of dot structure not raying total dose effect, relative two kinds propose dot structure, have better radiation hardened ability.
Figure 16 be the utility model with circuit in silicon dot structure on nested trap dot structure, double insulator with parasitic capacitance comparison diagram between sensor electrode.Have figure to etch, the utility model proposes dot structure has lower circuit with parasitic capacitance between sensor electrode, reduces interelectrode crosstalk further.
Comprise according to the radiation detector dot structure with air gap and trench field plate of the present utility model: top layer silicon exists gap structure with between field plate electrode, this gap structure lateral dimension is greater than the channel dimensions of top layer silicon MOSFET, and is less than the source-drain electrode Distances Between Neighboring Edge Points of top layer silicon MOSFET; Field plate structure has groove to draw, and MOSFET in circuit is surrounded by this groove.Be positioned at the gap structure below circuit MOSFET raceway groove, bottom potential can be effectively stoped to produce the expansion of electromotive force and the back-gate effect that causes, can also avoid radiation ionization total dose effect in dielectric, produce a large amount of hole charge, thus the threshold voltage affecting N-type or P type MOSFET change; Trench field plate structure can available protecting circuit MOSFET, reduces circuit further with parasitic capacitance between transducer, crosstalk between pad electrode, improves radiation detector probe radiation reinforcement ability and detectivity.Therefore, in fact, the fields such as business, military, space flight can be applied to according to air gap isolation structure of the present utility model.
Above-mentioned be the utility model especially exemplified by embodiment, and be not used to limit the utility model.The crosstalk isolation that the utility model provides and radiation hardened dot structure are equally applicable to SOI imageing sensor.Equally, can be applied in all element sensors, such as element sensor, particle detector, radiation detector and their variant.Not departing from essence of the present utility model and scope, can do a little adjustment and optimization, protection range of the present utility model is as the criterion with claim.
Although described one exemplary embodiment of the present utility model for illustrative purposes, but those skilled in the art will be appreciated that, can various amendment, interpolation and replacement be carried out, instead of depart from the scope and spirit of the present utility model disclosed in claims.
Claims (3)
1. a radiation detector crosstalk isolation and radiation hardened dot structure, comprise electrode field plate (301), P trap (302), P+ region (303), insulating dielectric materials (304), N-type body silicon (305), N-type MOSFET (306), P type MOSFET (307), back electrode (308), field plate metal electrode (309), P+ extraction electrode (310), connects field-plate trench (311); Above electrode field plate, two pairs of N-type MOSFET cooperatively interacted (306) and P type MOSFET (307) are arranged on the both sides of P+ extraction electrode, and often pair of N-type MOSFET (306) is provided with the both sides of P type MOSFET (307) the field plate metal electrode (309) be connected with electrode field plate; Electrode field plate, N-type MOSFET, P type MOSFET, P+ extraction electrode, field plate metal electrode are encapsulated in insulating dielectric materials jointly; Below insulating dielectric materials, center is the P+ region be connected with P+ extraction electrode, and both sides, P+ region are P trap, and P+ region and P trap are packaged together by N-type body silicon; It is characterized in that: between electrode field plate and MOSFET, have air gap, air gap does not contact with the raceway groove of MOSFET, and air gap is no more than the spacing of border farthest of source electrode and drain electrode along the width of the horizontal direction of MOSFET source electrode and drain electrode line; Air gap is greater than the width of MOSFET along the vertical line direction of MOSFET source electrode and drain electrode line; The flat contact material of air gap is insulating dielectric materials.
2. a kind of radiation detector crosstalk isolation according to claim 1 and radiation hardened dot structure, is characterized in that: described insulating dielectric materials is silicon nitride or silica.
3. a kind of radiation detector crosstalk isolation according to claim 1 and radiation hardened dot structure, is characterized in that: the flat shape of described air gap is ellipse, rectangle or circle.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104157659A (en) * | 2014-07-23 | 2014-11-19 | 哈尔滨工程大学 | Radiation detector crosstalk segregating radiating reinforcing pixel structure and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104157659A (en) * | 2014-07-23 | 2014-11-19 | 哈尔滨工程大学 | Radiation detector crosstalk segregating radiating reinforcing pixel structure and manufacturing method thereof |
| CN104157659B (en) * | 2014-07-23 | 2017-02-22 | 哈尔滨工程大学 | Radiation detector crosstalk segregating radiating reinforcing pixel structure and manufacturing method thereof |
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