CN203967070U - A kind of power semiconductor heat abstractor - Google Patents

A kind of power semiconductor heat abstractor Download PDF

Info

Publication number
CN203967070U
CN203967070U CN201420291159.9U CN201420291159U CN203967070U CN 203967070 U CN203967070 U CN 203967070U CN 201420291159 U CN201420291159 U CN 201420291159U CN 203967070 U CN203967070 U CN 203967070U
Authority
CN
China
Prior art keywords
heat
radiating fins
radiating
power semiconductor
heat pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420291159.9U
Other languages
Chinese (zh)
Inventor
黄磊
傅军
徐国俊
张竟超
张艳红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGSU HUAGUAN ELECTRICAL EQUIPMENT GROUP CO Ltd
Original Assignee
JIANGSU HUAGUAN ELECTRICAL EQUIPMENT GROUP CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIANGSU HUAGUAN ELECTRICAL EQUIPMENT GROUP CO Ltd filed Critical JIANGSU HUAGUAN ELECTRICAL EQUIPMENT GROUP CO Ltd
Priority to CN201420291159.9U priority Critical patent/CN203967070U/en
Application granted granted Critical
Publication of CN203967070U publication Critical patent/CN203967070U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A kind of power semiconductor heat abstractor, comprise some radiating fins that be arranged in parallel, it is characterized in that, between described every two radiating fins, by two connecting plates, connect, the whole side that described some radiating fins form is provided with some heat pipes, described heat pipe ending two ends connect at least two radiating fins, and are parallel to each other between heat pipe.The purpose of this utility model is to provide a kind of power semiconductor heat abstractor, cancels traditional heat-radiating substrate, directly on the surface of radiating fin, adds heat pipe, thereby can overcome the defect of conventional power semiconductors heat dissipating method, reaches high cooling efficiency.

Description

A kind of power semiconductor heat abstractor
Technical field
The utility model relates to semiconductor device field of radiating, relates in particular to the heat radiation of high-power electric and electronic current transformer.
Background technology
At present, in electronic power convertor, power semiconductor heat radiation generally adopts smears silica gel and is directly fastened on radiator base plate.But because current transformer power is larger, radiator focus is more concentrated, heat skewness weighing apparatus, tend to need to be larger installing space and thicker heat-radiating substrate and the more closeer longer problems such as radiating fin, while surpassing certain power, need to adopt the form of water-cooling.
Utility model content
The purpose of this utility model is to provide a kind of power semiconductor heat abstractor, cancels traditional heat-radiating substrate, directly on the surface of radiating fin, adds heat pipe, thereby can overcome the defect of above-mentioned power semiconductor heat dissipating method, reaches high cooling efficiency.
The technical scheme that realizes the utility model object is as follows:
A kind of power semiconductor heat abstractor, comprise some radiating fins that be arranged in parallel, between described every two radiating fins, by two connecting plates, connect, the whole side that described some radiating fins form is provided with some heat pipes, described heat pipe ending two ends connect at least two radiating fins, and are parallel to each other between heat pipe.
Further, the material that described connecting plate adopts is heat resisting steel, and its upper and lower surface is provided with depression, and described depression is evenly distributed on the upper and lower surface of connecting plate.
Further, described heat pipe is embedded in radiating fin surface or penetrates radiating fin.
Adopt after said structure, the beneficial effects of the utility model are: the utility model utilizes the heat pipe of high thermal conductivity, and heat pipe is directly connected with radiating fin, at power semiconductor heating part, absorb heat, according to the characteristic of heat pipe, heat is by inner phase-change heat transfer process, heat delivery to each radiating fin, and the heat of each radiating fin is all suitable, thereby realized hot transfer, tradition is equipped with the heat abstractor of heat-radiating substrate relatively, and radiating efficiency is better, thereby the utlity model has very high thermal conductivity, good isothermal.
Accompanying drawing explanation
Fig. 1 is embodiment 1 structural representation of the present utility model.
Fig. 2 is the end view of embodiment 1 of the present utility model.
Fig. 3 is embodiment 2 structural representations of the present utility model.
Fig. 4 is connecting plate schematic diagram of the present utility model.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
A kind of power semiconductor heat abstractor, comprise some radiating fins that be arranged in parallel 1, between described every two radiating fins, by two connecting plates 2, connect, the whole side that described some radiating fins 1 form is provided with some heat pipes 3, described heat pipe 3 ending two ends connect at least two radiating fins 1, and are parallel to each other between heat pipe 3.
As depicted in figs. 1 and 2, a kind of embodiment of the present utility model, between described heat pipe 3 ending two ends, 4 radiating fins 1 have been connected, formation parallelogram is parallel to each other and finishes up between every two adjacent heat pipes 3, when power device is attached on heat pipe 3, the heat that each heat pipe 3 produces power device transmits to the two ends of heat pipe 3, makes the heat on radiating fin 1 suitable, or has equal difference calorie value.Described 2 pairs of radiating fins 1 of connecting plate are fixed, and make radiating fin 1 integrated connection become rock-steady structure, and the distance between the connecting plate 2 of adjacent two radiating fins 1 keeps larger distance, and radiating fin 1 can well be dispelled the heat.
Described heat pipe 3 is embedded in radiating fin 1 surface or penetrates radiating fin 1, as shown in Figure 3, described heat pipe is through radiating fin 1, the process of now heat transmission is: the radiating fin mediating absorbs the heat of semiconductor power device, heat is delivered on the radiating fin at two ends by heat pipe again, the applicable higher semiconductor power device of temperature producing of heat abstractor now, prevent the damage of heat pipe, but it still has higher efficiency on radiating effect.
As shown in Figure 4, the material that described connecting plate 2 adopts is heat resisting steel, its upper and lower surface is provided with depression 4, described depression 4 is evenly distributed on the upper and lower surface of connecting plate, because whole device itself has higher temperature, therefore connecting plate also needs can be heat-resisting, in connecting plate upper and lower surface, is provided with even depression, increase the area of dissipation of connecting plate, extend the useful life of connecting plate.

Claims (3)

1. a power semiconductor heat abstractor, comprise some radiating fins that be arranged in parallel, it is characterized in that, between described every two radiating fins, by two connecting plates, connect, the whole side that described some radiating fins form is provided with some heat pipes, described heat pipe ending two ends connect at least two radiating fins, and are parallel to each other between heat pipe.
2. a kind of power semiconductor heat abstractor according to claim 1, is characterized in that, the material that described connecting plate adopts is alumite, and its upper and lower surface is provided with depression, and described depression is evenly distributed on the upper and lower surface of connecting plate.
3. a kind of power semiconductor heat abstractor according to claim 1, is characterized in that, described heat pipe is embedded in radiating fin surface or penetrates radiating fin.
CN201420291159.9U 2014-06-03 2014-06-03 A kind of power semiconductor heat abstractor Expired - Fee Related CN203967070U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420291159.9U CN203967070U (en) 2014-06-03 2014-06-03 A kind of power semiconductor heat abstractor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420291159.9U CN203967070U (en) 2014-06-03 2014-06-03 A kind of power semiconductor heat abstractor

Publications (1)

Publication Number Publication Date
CN203967070U true CN203967070U (en) 2014-11-26

Family

ID=51927620

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420291159.9U Expired - Fee Related CN203967070U (en) 2014-06-03 2014-06-03 A kind of power semiconductor heat abstractor

Country Status (1)

Country Link
CN (1) CN203967070U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114895533A (en) * 2022-05-16 2022-08-12 杭州新诺微电子有限公司 A multi-scenario modular LDI air-cooled DMD phase change cooling mechanism

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114895533A (en) * 2022-05-16 2022-08-12 杭州新诺微电子有限公司 A multi-scenario modular LDI air-cooled DMD phase change cooling mechanism

Similar Documents

Publication Publication Date Title
CN203859970U (en) Cooling-used double-layer cooling plate and electronic component cooling device
CN103269573A (en) Temperature equalization superconductive heat radiator
CN102446878A (en) Semiconductor refrigerating device
CN105656353A (en) Geothermal power generating device with thermoelectric generation element
CN102446877A (en) Semiconductor heat dissipation device
CN205755247U (en) A heat pipe superconductor cooling device
CN203967070U (en) A kind of power semiconductor heat abstractor
CN203136189U (en) PTC heat pipe heater
CN204062935U (en) Based on the LED radiator of hot pipe technique
CN202444732U (en) Heat radiation device of small solar warmer
CN202632787U (en) Heat sink structure with heat conduction, heat convection and heat radiation
CN110769657A (en) Integrated uniform temperature plate radiator
CN204438055U (en) A kind of LED heat abstractor based on double-deck heat pipe structure
CN204441037U (en) A kind of high overload transformer
CN202791914U (en) LED lamp radiating and waste heat recovery device
CN202817659U (en) Bus duct with vertical radiating fins
CN201269667Y (en) Semiconductor refrigerating device
CN103796476A (en) Locomotive power module air-cooling heat-dissipating device
CN206728473U (en) A kind of inserted sheet attachment structure of substrate and fin
CN203288578U (en) Dissipation sheet module with microgroove flat heat tubes
CN201219340Y (en) Heat pipe radiator with radiation fin interspace of 8 to 18mm
CN202546383U (en) A graphite substrate LED lamp
CN202979555U (en) Insertion fin type heat dissipation device adopting heat pipes as auxiliary heat transfer devices
CN203788620U (en) Novel electronic component radiation structure
CN201426087Y (en) Rectifier provided with heat dissipating device

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Assignee: JIANGSU HUATANG ELECTRICAL APPLIANCE Co.,Ltd.

Assignor: JIANGSU HUAGUAN ELECTRICAL EQUIPMENT GROUP Co.,Ltd.

Contract record no.: 2017320000021

Denomination of utility model: Heat dissipation device for power semiconductor

Granted publication date: 20141126

License type: Common License

Record date: 20170224

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20141126

CF01 Termination of patent right due to non-payment of annual fee