CN203967070U - A kind of power semiconductor heat abstractor - Google Patents
A kind of power semiconductor heat abstractor Download PDFInfo
- Publication number
- CN203967070U CN203967070U CN201420291159.9U CN201420291159U CN203967070U CN 203967070 U CN203967070 U CN 203967070U CN 201420291159 U CN201420291159 U CN 201420291159U CN 203967070 U CN203967070 U CN 203967070U
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- China
- Prior art keywords
- heat
- radiating fins
- radiating
- power semiconductor
- heat pipe
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A kind of power semiconductor heat abstractor, comprise some radiating fins that be arranged in parallel, it is characterized in that, between described every two radiating fins, by two connecting plates, connect, the whole side that described some radiating fins form is provided with some heat pipes, described heat pipe ending two ends connect at least two radiating fins, and are parallel to each other between heat pipe.The purpose of this utility model is to provide a kind of power semiconductor heat abstractor, cancels traditional heat-radiating substrate, directly on the surface of radiating fin, adds heat pipe, thereby can overcome the defect of conventional power semiconductors heat dissipating method, reaches high cooling efficiency.
Description
Technical field
The utility model relates to semiconductor device field of radiating, relates in particular to the heat radiation of high-power electric and electronic current transformer.
Background technology
At present, in electronic power convertor, power semiconductor heat radiation generally adopts smears silica gel and is directly fastened on radiator base plate.But because current transformer power is larger, radiator focus is more concentrated, heat skewness weighing apparatus, tend to need to be larger installing space and thicker heat-radiating substrate and the more closeer longer problems such as radiating fin, while surpassing certain power, need to adopt the form of water-cooling.
Utility model content
The purpose of this utility model is to provide a kind of power semiconductor heat abstractor, cancels traditional heat-radiating substrate, directly on the surface of radiating fin, adds heat pipe, thereby can overcome the defect of above-mentioned power semiconductor heat dissipating method, reaches high cooling efficiency.
The technical scheme that realizes the utility model object is as follows:
A kind of power semiconductor heat abstractor, comprise some radiating fins that be arranged in parallel, between described every two radiating fins, by two connecting plates, connect, the whole side that described some radiating fins form is provided with some heat pipes, described heat pipe ending two ends connect at least two radiating fins, and are parallel to each other between heat pipe.
Further, the material that described connecting plate adopts is heat resisting steel, and its upper and lower surface is provided with depression, and described depression is evenly distributed on the upper and lower surface of connecting plate.
Further, described heat pipe is embedded in radiating fin surface or penetrates radiating fin.
Adopt after said structure, the beneficial effects of the utility model are: the utility model utilizes the heat pipe of high thermal conductivity, and heat pipe is directly connected with radiating fin, at power semiconductor heating part, absorb heat, according to the characteristic of heat pipe, heat is by inner phase-change heat transfer process, heat delivery to each radiating fin, and the heat of each radiating fin is all suitable, thereby realized hot transfer, tradition is equipped with the heat abstractor of heat-radiating substrate relatively, and radiating efficiency is better, thereby the utlity model has very high thermal conductivity, good isothermal.
Accompanying drawing explanation
Fig. 1 is embodiment 1 structural representation of the present utility model.
Fig. 2 is the end view of embodiment 1 of the present utility model.
Fig. 3 is embodiment 2 structural representations of the present utility model.
Fig. 4 is connecting plate schematic diagram of the present utility model.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
A kind of power semiconductor heat abstractor, comprise some radiating fins that be arranged in parallel 1, between described every two radiating fins, by two connecting plates 2, connect, the whole side that described some radiating fins 1 form is provided with some heat pipes 3, described heat pipe 3 ending two ends connect at least two radiating fins 1, and are parallel to each other between heat pipe 3.
As depicted in figs. 1 and 2, a kind of embodiment of the present utility model, between described heat pipe 3 ending two ends, 4 radiating fins 1 have been connected, formation parallelogram is parallel to each other and finishes up between every two adjacent heat pipes 3, when power device is attached on heat pipe 3, the heat that each heat pipe 3 produces power device transmits to the two ends of heat pipe 3, makes the heat on radiating fin 1 suitable, or has equal difference calorie value.Described 2 pairs of radiating fins 1 of connecting plate are fixed, and make radiating fin 1 integrated connection become rock-steady structure, and the distance between the connecting plate 2 of adjacent two radiating fins 1 keeps larger distance, and radiating fin 1 can well be dispelled the heat.
Described heat pipe 3 is embedded in radiating fin 1 surface or penetrates radiating fin 1, as shown in Figure 3, described heat pipe is through radiating fin 1, the process of now heat transmission is: the radiating fin mediating absorbs the heat of semiconductor power device, heat is delivered on the radiating fin at two ends by heat pipe again, the applicable higher semiconductor power device of temperature producing of heat abstractor now, prevent the damage of heat pipe, but it still has higher efficiency on radiating effect.
As shown in Figure 4, the material that described connecting plate 2 adopts is heat resisting steel, its upper and lower surface is provided with depression 4, described depression 4 is evenly distributed on the upper and lower surface of connecting plate, because whole device itself has higher temperature, therefore connecting plate also needs can be heat-resisting, in connecting plate upper and lower surface, is provided with even depression, increase the area of dissipation of connecting plate, extend the useful life of connecting plate.
Claims (3)
1. a power semiconductor heat abstractor, comprise some radiating fins that be arranged in parallel, it is characterized in that, between described every two radiating fins, by two connecting plates, connect, the whole side that described some radiating fins form is provided with some heat pipes, described heat pipe ending two ends connect at least two radiating fins, and are parallel to each other between heat pipe.
2. a kind of power semiconductor heat abstractor according to claim 1, is characterized in that, the material that described connecting plate adopts is alumite, and its upper and lower surface is provided with depression, and described depression is evenly distributed on the upper and lower surface of connecting plate.
3. a kind of power semiconductor heat abstractor according to claim 1, is characterized in that, described heat pipe is embedded in radiating fin surface or penetrates radiating fin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420291159.9U CN203967070U (en) | 2014-06-03 | 2014-06-03 | A kind of power semiconductor heat abstractor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420291159.9U CN203967070U (en) | 2014-06-03 | 2014-06-03 | A kind of power semiconductor heat abstractor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203967070U true CN203967070U (en) | 2014-11-26 |
Family
ID=51927620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420291159.9U Expired - Fee Related CN203967070U (en) | 2014-06-03 | 2014-06-03 | A kind of power semiconductor heat abstractor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203967070U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114895533A (en) * | 2022-05-16 | 2022-08-12 | 杭州新诺微电子有限公司 | A multi-scenario modular LDI air-cooled DMD phase change cooling mechanism |
-
2014
- 2014-06-03 CN CN201420291159.9U patent/CN203967070U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114895533A (en) * | 2022-05-16 | 2022-08-12 | 杭州新诺微电子有限公司 | A multi-scenario modular LDI air-cooled DMD phase change cooling mechanism |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: JIANGSU HUATANG ELECTRICAL APPLIANCE Co.,Ltd. Assignor: JIANGSU HUAGUAN ELECTRICAL EQUIPMENT GROUP Co.,Ltd. Contract record no.: 2017320000021 Denomination of utility model: Heat dissipation device for power semiconductor Granted publication date: 20141126 License type: Common License Record date: 20170224 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141126 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |