CN203734606U - 一种聚光太阳能模组 - Google Patents
一种聚光太阳能模组 Download PDFInfo
- Publication number
- CN203734606U CN203734606U CN201320882273.4U CN201320882273U CN203734606U CN 203734606 U CN203734606 U CN 203734606U CN 201320882273 U CN201320882273 U CN 201320882273U CN 203734606 U CN203734606 U CN 203734606U
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- CN
- China
- Prior art keywords
- lens
- concentrator
- solar module
- module according
- battery chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 230000005855 radiation Effects 0.000 claims description 21
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 12
- 230000000694 effects Effects 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000011514 reflex Effects 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000009833 condensation Methods 0.000 abstract description 2
- 230000005494 condensation Effects 0.000 abstract description 2
- 238000004134 energy conservation Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001335 Galvanized steel Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000008397 galvanized steel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320882273.4U CN203734606U (zh) | 2013-12-30 | 2013-12-30 | 一种聚光太阳能模组 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320882273.4U CN203734606U (zh) | 2013-12-30 | 2013-12-30 | 一种聚光太阳能模组 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203734606U true CN203734606U (zh) | 2014-07-23 |
Family
ID=51204648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201320882273.4U Expired - Lifetime CN203734606U (zh) | 2013-12-30 | 2013-12-30 | 一种聚光太阳能模组 |
Country Status (1)
Country | Link |
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CN (1) | CN203734606U (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118352418A (zh) * | 2024-06-18 | 2024-07-16 | 上海空间电源研究所 | 一种空间用微型聚光太阳电池芯片、模组及组件 |
-
2013
- 2013-12-30 CN CN201320882273.4U patent/CN203734606U/zh not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118352418A (zh) * | 2024-06-18 | 2024-07-16 | 上海空间电源研究所 | 一种空间用微型聚光太阳电池芯片、模组及组件 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171023 Address after: 362000, 1303 Jiangnan high tech park, South Ring Road, Licheng District, Fujian, Quanzhou Patentee after: GS-SOLAR (FU JIAN) Co.,Ltd. Address before: 362000, Fujian 2, Quanzhou province Quanzhou city Licheng District hi tech Park Patentee before: BOTAI SEMICONDUCTOR TECHNOLOGIES Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211208 Address after: No.17, Quanyuan Road, Jinjiang Economic Development Zone (wuliyuan), Quanzhou City, Fujian Province, 362000 Patentee after: FUJIAN JINSHI ENERGY Co.,Ltd. Address before: No. 1303, Jiangnan high tech park, South Ring Road, Licheng District Patentee before: GS-SOLAR (FU JIAN) Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20140723 |
|
CX01 | Expiry of patent term |