CN203658046U - Single-emission reflection type transmission synchronization photoelectric detection base device - Google Patents
Single-emission reflection type transmission synchronization photoelectric detection base device Download PDFInfo
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- CN203658046U CN203658046U CN201320879363.8U CN201320879363U CN203658046U CN 203658046 U CN203658046 U CN 203658046U CN 201320879363 U CN201320879363 U CN 201320879363U CN 203658046 U CN203658046 U CN 203658046U
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- reflecting surface
- plane reflecting
- gear
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- master gear
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 15
- 238000001514 detection method Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000006698 induction Effects 0.000 claims description 3
- 238000013507 mapping Methods 0.000 claims description 3
- 230000011514 reflex Effects 0.000 claims description 3
- 230000001360 synchronised effect Effects 0.000 abstract description 5
- 230000003750 conditioning effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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Abstract
The utility model discloses a single-emission reflection type transmission synchronization photoelectric detection base device. A diode laser transmitter is fixedly mounted at an end surface of one side of a driven synchronization to-be-tested gear; an MOS transistor is fixed at an end surface of one side of a driving standard gear; the driving standard gear drives the driven synchronization to-be-tested gears to rotate; and when the diode laser transmitter emits linear laser beams, a laser spot projected on any MOS transistor by the linear laser beams which are emitted by the diode laser transmitter and are reflected by a first plane light reflecting surface and a second plane light reflecting surface sequentially moves circumferentially. The single-emission reflection type transmission synchronization photoelectric detection base device of the utility model is reasonable in structure. With the single-emission reflection type transmission synchronization photoelectric detection base device adopted, the synchronization of the gears can be detected innovatively, and synchronous transmission of the gears can be measured with numerical values.
Description
Technical field
The utility model relates to power wheel transmission synchronism and detects Light Electrical equipment, particularly single-shot formula light reflection-type transmission synchronism Photoelectric Detection base apparatus.
Background technology
Gear synchronous transmission is to weigh one of key index of gear quality quality, and the technical research difficulty that quantizes gear synchronous is still larger, but current, the device of prototype gear synchrodrive value is not almost developed, and is not used widely.
Utility model content
The purpose of this utility model is to provide a kind of single-shot formula light reflection-type transmission synchronism Photoelectric Detection base apparatus, and it is rational in infrastructure, pioneering ground of energy detection of gear synchronism, and weigh gear synchronous transmission with numerical value.
The purpose of this utility model is achieved in that a kind of single-shot formula light reflection-type transmission synchronism Photoelectric Detection base apparatus, comprise the first reflective mirror (1), the second reflective mirror (3), active master gear (8) and slave mode synchronism gear to be measured (6) that modulus is identical, diode laser transmitter (5), metal-oxide-semiconductor (7), the first reflective mirror (1) is provided with the first reflecting coating (2), the second reflective mirror (3) is provided with the second reflecting coating (4), the second plane reflecting surface that the first plane reflecting surface that the first reflecting coating (2) has has with the second reflecting coating (4) is with the mode forward surface pair that is perpendicular to one another, active master gear (8) is meshed with slave mode synchronism gear to be measured (6), face angle between angle between both sides end face and the first plane reflecting surface that the both sides end face that active master gear (8) parallels self self parallels with slave mode synchronism gear to be measured (6) and this and the second plane reflecting surface is 45 °, himself be fixedly mounted with for the diode laser transmitter (5) to the first plane reflecting surface emitting linear shape laser beam in the face of on a side end face of the first plane reflecting surface at slave mode synchronism gear to be measured (6), the linearity laser beam that diode laser transmitter (5) is launched and the angle of the first plane reflecting surface, be 45 ° with the angle of the second plane reflecting surface, active master gear (8) himself in the face of on a side end face of the second plane reflecting surface uniform be fixed wtih launch for induction reception diode generating laser (5) successively by the first plane reflecting surface, the metal-oxide-semiconductor (7) of the laser beam of the second plane reflecting surface reflection, the arc shape orthogonal projection radian that the orthogonal projection of each metal-oxide-semiconductor (7) in the reference planes perpendicular with active master gear (8) geometric centre axes is arc shape and all metal-oxide-semiconductors (7) corresponding formation in these reference planes equates, all metal-oxide-semiconductors (7) with around active master gear (8) geometric centre axes along hoop uniform and simultaneously on active master gear (8) one side end faces at its place along take its place active master gear (8) one side end face geometric center point as the border circular areas radial equipartition in the center of circle, be positive annular so that spell the orthogonal projection of the charge-coupled device array forming in these reference planes around active master gear (8) geometric centre axes, its geometric centre axes that is regarded as light of slave mode synchronism gear to be measured (6) according to light reflection law successively by the first plane reflecting surface, mapping point and active master gear (8) geometric centre axes that the second plane reflecting surface reflexes in these reference planes coincide, when active master gear (8) is driven by external force and rotation while launching linearity laser beam to order about slave mode synchronism gear to be measured (6) rotation of engaging with it and diode laser transmitter (5), diode laser transmitter (5) is corresponding to be circled around slave mode synchronism gear to be measured (6) geometric centre axes, diode laser transmitter (5) launch successively by the first plane reflecting surface, laser facula corresponding circle of its projection of linearity laser beam of the second plane reflecting surface reflection on the upper a certain metal-oxide-semiconductor (7) that forms charge-coupled device array, and corresponding the circling of this laser facula and the positive circular path that forms is positioned at the positive annular orthogonal projection region of charge-coupled device array in these reference planes all the time.
Very little optical characteristics and the basic optical law of metal-oxide-semiconductor light sensitive characteristic, laser beam divergence that the utility model utilization forms CCD (charge-coupled device) imageing sensor can complete the work that detects slave mode synchronism gear drive synchronism to be measured.When the utility model work, diode laser transmitter launch successively by first, the laser beam of the second reflective mirror reflection is mapped in to be positioned on the central a certain metal-oxide-semiconductor of charge-coupled device array and forms laser facula, its polar coordinates of each metal-oxide-semiconductor are all that relatively active master gear is fixed and the corresponding pixel of each metal-oxide-semiconductor, by laser beam irradiation to this single metal-oxide-semiconductor just can send to the signal conditioning package external with it to process the laser facula place polar coordinates value sensing, signal conditioning package finally can be exported about at least being comprised around this trajectory diagram of movement locus figure of active master gear geometric centre axes revolution the numerical information such as phasing degree range values and radially mobile displacement range numerical value that laser facula moves along circumference by the quantifiable laser facula of slave mode synchronism gear drive synchronism to be measured.The utility model is rational in infrastructure, pioneering ground of energy detection of gear synchronism, and weigh gear synchronous transmission with numerical value.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Fig. 1 is the overall main TV structure schematic diagram of the utility model;
Fig. 2 is active master gear and the common structural representation of projection vertically of slave mode synchronism gear to be measured that the utility model is meshed.
Embodiment
A kind of single-shot formula light reflection-type transmission synchronism Photoelectric Detection base apparatus, as Fig. 1, shown in Fig. 2, comprise the first reflective mirror (1), the second reflective mirror (3), active master gear (8) and slave mode synchronism gear to be measured (6) that modulus is identical, diode laser transmitter (5), metal-oxide-semiconductor (7), the first reflective mirror (1) is provided with the first reflecting coating (2), the second reflective mirror (3) is provided with the second reflecting coating (4), the second plane reflecting surface that the first plane reflecting surface that the first reflecting coating (2) has has with the second reflecting coating (4) is with the mode forward surface pair that is perpendicular to one another, active master gear (8) is meshed with slave mode synchronism gear to be measured (6), face angle between angle between both sides end face and the first plane reflecting surface that the both sides end face that active master gear (8) parallels self self parallels with slave mode synchronism gear to be measured (6) and this and the second plane reflecting surface is 45 °, himself be fixedly mounted with for the diode laser transmitter (5) to the first plane reflecting surface emitting linear shape laser beam in the face of on a side end face of the first plane reflecting surface at slave mode synchronism gear to be measured (6), the linearity laser beam that diode laser transmitter (5) is launched and the angle of the first plane reflecting surface, be 45 ° with the angle of the second plane reflecting surface, active master gear (8) himself in the face of on a side end face of the second plane reflecting surface uniform be fixed wtih launch for induction reception diode generating laser (5) successively by the first plane reflecting surface, the metal-oxide-semiconductor (7) of the laser beam of the second plane reflecting surface reflection, the arc shape orthogonal projection radian that the orthogonal projection of each metal-oxide-semiconductor (7) in the reference planes perpendicular with active master gear (8) geometric centre axes is arc shape and all metal-oxide-semiconductors (7) corresponding formation in these reference planes equates, all metal-oxide-semiconductors (7) with around active master gear (8) geometric centre axes along hoop uniform and simultaneously on active master gear (8) one side end faces at its place along take its place active master gear (8) one side end face geometric center point as the border circular areas radial equipartition in the center of circle, be positive annular so that spell the orthogonal projection of the charge-coupled device array forming in these reference planes around active master gear (8) geometric centre axes, its geometric centre axes that is regarded as light of slave mode synchronism gear to be measured (6) according to light reflection law successively by the first plane reflecting surface, mapping point and active master gear (8) geometric centre axes that the second plane reflecting surface reflexes in these reference planes coincide, when active master gear (8) is driven by external force and rotation while launching linearity laser beam to order about slave mode synchronism gear to be measured (6) rotation of engaging with it and diode laser transmitter (5), diode laser transmitter (5) is corresponding to be circled around slave mode synchronism gear to be measured (6) geometric centre axes, diode laser transmitter (5) launch successively by the first plane reflecting surface, laser facula corresponding circle of its projection of linearity laser beam of the second plane reflecting surface reflection on the upper a certain metal-oxide-semiconductor (7) that forms charge-coupled device array, and corresponding the circling of this laser facula and the positive circular path that forms is positioned at the positive annular orthogonal projection region of charge-coupled device array in these reference planes all the time.
Claims (1)
1. a single-shot formula light reflection-type transmission synchronism Photoelectric Detection base apparatus, it is characterized in that: comprise the first reflective mirror (1), the second reflective mirror (3), active master gear (8) and slave mode synchronism gear to be measured (6) that modulus is identical, diode laser transmitter (5), metal-oxide-semiconductor (7), the first reflective mirror (1) is provided with the first reflecting coating (2), the second reflective mirror (3) is provided with the second reflecting coating (4), the second plane reflecting surface that the first plane reflecting surface that the first reflecting coating (2) has has with the second reflecting coating (4) is with the mode forward surface pair that is perpendicular to one another, active master gear (8) is meshed with slave mode synchronism gear to be measured (6), face angle between angle between both sides end face and the first plane reflecting surface that the both sides end face that active master gear (8) parallels self self parallels with slave mode synchronism gear to be measured (6) and this and the second plane reflecting surface is 45 °, himself be fixedly mounted with for the diode laser transmitter (5) to the first plane reflecting surface emitting linear shape laser beam in the face of on a side end face of the first plane reflecting surface at slave mode synchronism gear to be measured (6), the linearity laser beam that diode laser transmitter (5) is launched and the angle of the first plane reflecting surface, be 45 ° with the angle of the second plane reflecting surface, active master gear (8) himself in the face of on a side end face of the second plane reflecting surface uniform be fixed wtih launch for induction reception diode generating laser (5) successively by the first plane reflecting surface, the metal-oxide-semiconductor (7) of the laser beam of the second plane reflecting surface reflection, the arc shape orthogonal projection radian that the orthogonal projection of each metal-oxide-semiconductor (7) in the reference planes perpendicular with active master gear (8) geometric centre axes is arc shape and all metal-oxide-semiconductors (7) corresponding formation in these reference planes equates, all metal-oxide-semiconductors (7) with around active master gear (8) geometric centre axes along hoop uniform and simultaneously on active master gear (8) one side end faces at its place along take its place active master gear (8) one side end face geometric center point as the border circular areas radial equipartition in the center of circle, be positive annular so that spell the orthogonal projection of the charge-coupled device array forming in these reference planes around active master gear (8) geometric centre axes, its geometric centre axes that is regarded as light of slave mode synchronism gear to be measured (6) according to light reflection law successively by the first plane reflecting surface, mapping point and active master gear (8) geometric centre axes that the second plane reflecting surface reflexes in these reference planes coincide, when active master gear (8) is driven by external force and rotation while launching linearity laser beam to order about slave mode synchronism gear to be measured (6) rotation of engaging with it and diode laser transmitter (5), diode laser transmitter (5) is corresponding to be circled around slave mode synchronism gear to be measured (6) geometric centre axes, diode laser transmitter (5) launch successively by the first plane reflecting surface, laser facula corresponding circle of its projection of linearity laser beam of the second plane reflecting surface reflection on the upper a certain metal-oxide-semiconductor (7) that forms charge-coupled device array, and corresponding the circling of this laser facula and the positive circular path that forms is positioned at the positive annular orthogonal projection region of charge-coupled device array in these reference planes all the time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320879363.8U CN203658046U (en) | 2013-12-29 | 2013-12-29 | Single-emission reflection type transmission synchronization photoelectric detection base device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320879363.8U CN203658046U (en) | 2013-12-29 | 2013-12-29 | Single-emission reflection type transmission synchronization photoelectric detection base device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203658046U true CN203658046U (en) | 2014-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320879363.8U Expired - Lifetime CN203658046U (en) | 2013-12-29 | 2013-12-29 | Single-emission reflection type transmission synchronization photoelectric detection base device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203658046U (en) |
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2013
- 2013-12-29 CN CN201320879363.8U patent/CN203658046U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140618 |
|
| CX01 | Expiry of patent term |