CN203643338U

CN203643338U - CMOS (complementary metal oxide semiconductor) contact type fluorescent detection analysis array sensing chip

Info

Publication number: CN203643338U
Application number: CN201320694206.XU
Authority: CN
Inventors: 施朝霞; 曹全君; 李如春
Original assignee: Zhejiang University of Technology ZJUT
Current assignee: Zhejiang University of Technology ZJUT
Priority date: 2013-11-05
Filing date: 2013-11-05
Publication date: 2014-06-11
Anticipated expiration: 2023-11-05

Abstract

The utility model discloses a CMOS (complementary metal oxide semiconductor) contact type fluorescent detection analysis array sensing chip. The CMOS contact type fluorescent detection analysis array sensing chip comprises a chip body which comprises a silicon gel substrate, an SU-8 thick adhesive, a signal processing circuit, a photoelectric sensing array, an active preprocessing amplifying array and an asynchronous time sequence control circuit, wherein the SU-8 thick adhesive is fixed on the upper surface of the silicon substrate; at least one fluorescent reaction pool group is arranged on the SU-8 thick adhesive; each fluorescent reaction pool group comprises at least one micro-reaction pool; the signal processing circuit, the photoelectric sensing array, the active preprocessing amplifying array and the asynchronous time sequence control circuit are correspondingly laid on the silicon gel substrate right below the fluorescent reaction pool groups; the signal output end of the signal processing circuit is connected with a pressure welding block. The CMOS contact type fluorescent detection analysis array sensing chip has the beneficial effects that a photoelectric PN junction diode is capable of converting fluorescence into photoelectric current and is integrated with the active signal processing circuit a monolithic manner, so that the signal transmission loss is reduced, and the detection microminiaturization is realized; the micro-reaction pool is capable of detecting a sample or simultaneously detecting a plurality of samples.

Description

Array sensing chip is analyzed in the fluoroscopic examination of CMOS contact

Technical field

The utility model relates to a kind of CMOS contact fluoroscopic examination and analyzes array sensing chip.

Background technology

Fluorescence detection method detects in gene information, and virus detects, and the aspects such as DNA sequence dna test obtain a wide range of applications, and it is that current biochemical field is most important, one of detection technique of most convenient.The conventional detector for fluoroscopic examination has photomultiplier (PMT), avalanche diode (APD) and charge-coupled device (CCD) etc., detector can convert fluorescence to photocurrent, and export the magnitude of voltage of corresponding size by follow-up I/V change-over circuit, the detection of discrete component and signal processing have that volume is large, expensive, operating voltage large and with the incompatible feature of CMOS technique.In CMOS technique, can realize the sensor devices of diode, triode or optical grating construction, also can be by integrated signal processing circuit monolithic, the checkout equipment that these devices form has the advantages such as low cost, low-power consumption, high integration, is highly suitable for the application of integrated bio detection field.

When at present fluoroscopic examination, discrete fluorescence reaction pond is placed in to fluorescent probe top, realization be contactless detection method, fluorescence can produce loss between fluorescence reaction pond and fluorescent probe, reduces the sensitivity of fluoroscopic examination.

Summary of the invention

When the utility model is tested for current fluorescence detection device, fluorescence can produce the problem of the sensitivity of loss, reduction fluoroscopic examination between fluorescence reaction pond and fluorescent probe, has proposed the CMOS contact fluoroscopic examination that a kind of measurement sensitivity is high, loss is little and has analyzed array sensing chip.

Array sensing chip is analyzed in CMOS contact fluoroscopic examination described in the utility model, comprise chip body, it is characterized in that: described chip body comprises silicon substrate, the thick glue of SU-8, signal processing circuit, photoelectric sensing array, active pre-service amplification array and asynchronous sequential control circuit, the thick glue of described SU-8 is fixed on described silicon substrate upper surface, at least one fluorescence reaction pond group is set on the thick glue of described SU-8, and each described fluorescence reaction pond group is made up of at least one micro reaction pool; Be positioned on the silicon substrate under the group of fluorescence reaction pond and lay corresponding signal processing circuit, photoelectric sensing array; The signal input part that the signal input part of described photoelectric sensing array is connected with the signal output part signal of described asynchronous sequential control circuit, the signal output part of described photoelectric sensing array amplifies array with described active pre-service is connected; The signal output part that array is amplified in described active pre-service is connected with the signal input part signal of described signal processing circuit and the signal output part of described signal processing circuit is connected with press welding block.

Between described photoelectric sensing array and described signal processing circuit, metal screen layer is set.

Described photoelectric sensing array is to form four-way light sensation array with the PN junction photodiode of CMOS process compatible.

The thick glue of described SU-8 is provided with four symmetrical fluorescence reaction pond groups, and each fluorescence reaction pond group Jun You tetra-road micro reaction pool symmetric offset spread.

The described micro reaction pool degree of depth is 100 μ m.

When use, the thick glue Shang tetra-road micro reaction pools of SU-8, in micro reaction pool, design four-way photoelectric sensing array, signal processing circuit adopts asynchronous sequential and timesharing output control mode, can read the fluorescence intensity signals voltage in the fluorescence decay process of four-way photoelectric sensing array, on chip, detection signal is drawn by press welding block.

The beneficial effects of the utility model are: 1, can convert faint fluorescence to photocurrent, photoelectricity PN junction diode Array Design as required with the photoelectricity PN junction diode of CMOS process compatible; 2, photoelectricity PN junction diode can be integrated with follow-up active signal treatment circuit monolithic, reduced signal slippages and realized the microminiaturization detecting; 3, integrated SU-8 micro reaction pool on sheet, can carry out single or multiple passage samples and detect simultaneously.The utility model produces fluorescence signal, detect and processes the sensing chip realization with monolithic.

Accompanying drawing explanation

Fig. 1 be structural drawing of the present utility model (wherein: arrow represents the incident direction of nanoscale pulse excitation light; p ⁺leak and inject for P type source; n ⁺leak and inject for N-type source; N-well is N-type light dope trap).

Fig. 2 is cut-away view of the present utility model.

Embodiment

Further illustrate the utility model below in conjunction with accompanying drawing

With reference to accompanying drawing:

Array sensing chip is analyzed in the fluoroscopic examination of embodiment 1 CMOS contact described in the utility model, comprise chip body 1, described chip body comprises silicon substrate 11, the thick glue 12 of SU-8, signal processing circuit 13, photoelectric sensing array 14, the thick glue 12 of described SU-8 is fixed on described silicon substrate 11 upper surfaces, at least one fluorescence reaction pond group 121 is set on the thick glue 12 of described SU-8, and each described fluorescence reaction pond group 121 is made up of at least one micro reaction pool 1211; Be positioned on the silicon substrate 11 under fluorescence reaction pond group 121 and lay corresponding signal processing circuit 13, photoelectric sensing array 14; The signal input part of described signal processing circuit 13 amplifies by active pre-service that array is connected with described photoelectric sensing array 14 signals with asynchronous sequential control circuit, signal output part transmits by press welding block.

Between described photoelectric sensing array 14 and described signal processing circuit 13, metal screen layer 15 is set.

Described photoelectric sensing array 14 is to form four-way light sensation array with the PN junction photodiode of CMOS process compatible.

The thick glue 12 of described SU-8 is provided with four symmetrical fluorescence reaction pond groups 121, and each fluorescence reaction pond group 121 Jun You tetra-road micro reaction pool symmetric offset spread.

The described micro reaction pool degree of depth is 100 μ m.

When use, sample 2 is placed in the reaction tank of fluorescence reaction pond group 121, then utilize nanoscale pulse excitation light 3 to irradiate sample, the now thick glue 12 Shang tetra-road micro reaction pools of SU-8, in micro reaction pool, design four-way photoelectric sensing array, signal processing circuit 13 adopts asynchronous sequential and timesharing output control mode, can read the fluorescence intensity signals voltage in the fluorescence decay process of four-way photoelectric sensing array, and on chip, detection signal is drawn by press welding block.

Content described in this instructions embodiment is only enumerating of way of realization to utility model design; protection domain of the present utility model should not be regarded as only limiting to the concrete form that embodiment states, protection domain of the present utility model also comprises that those skilled in the art conceive the equivalent technologies means that can expect according to the utility model.

Claims

Array sensing chip is analyzed in the fluoroscopic examination of 1.CMOS contact, comprise chip body, it is characterized in that: described chip body comprises silicon substrate, the thick glue of SU-8, signal processing circuit, photoelectric sensing array, active pre-service amplification array and asynchronous sequential control circuit, the thick glue of described SU-8 is fixed on described silicon substrate upper surface, at least one fluorescence reaction pond group is set on the thick glue of described SU-8, and each described fluorescence reaction pond group is made up of at least one micro reaction pool; Be positioned on the silicon substrate under the group of fluorescence reaction pond and lay corresponding signal processing circuit, photoelectric sensing array; The signal input part that the signal input part of described photoelectric sensing array is connected with the signal output part signal of described asynchronous sequential control circuit, the signal output part of described photoelectric sensing array amplifies array with described active pre-service is connected; The signal output part that array is amplified in described active pre-service is connected with the signal input part signal of described signal processing circuit and the signal output part of described signal processing circuit is connected with press welding block.
2. array sensing chip is analyzed in CMOS contact fluoroscopic examination as claimed in claim 1, it is characterized in that: between described photoelectric sensing array and described signal processing circuit, metal screen layer is set.
3. array sensing chip is analyzed in CMOS contact fluoroscopic examination as claimed in claim 2, it is characterized in that: described photoelectric sensing array is to form four-way light sensation array with the PN junction photodiode of CMOS process compatible.
4. array sensing chip is analyzed in CMOS contact fluoroscopic examination as claimed in claim 3, it is characterized in that: the thick glue of described SU-8 is provided with four symmetrical fluorescence reaction pond groups, and each fluorescence reaction pond group Jun You tetra-road micro reaction pool symmetric offset spread.
5. array sensing chip is analyzed in CMOS contact fluoroscopic examination as claimed in claim 4, it is characterized in that: the described micro reaction pool degree of depth is 100 μ m.