CN203606384U - Silicon piezoresistive type accelerometer based on Josephson effect detection - Google Patents
Silicon piezoresistive type accelerometer based on Josephson effect detection Download PDFInfo
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- CN203606384U CN203606384U CN201320699591.7U CN201320699591U CN203606384U CN 203606384 U CN203606384 U CN 203606384U CN 201320699591 U CN201320699591 U CN 201320699591U CN 203606384 U CN203606384 U CN 203606384U
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Abstract
The utility model discloses a silicon piezoresistive type accelerometer based on Josephson effect detection. The silicon piezoresistive type accelerometer comprises a bonding substrate, a support frame body, Josephson devices, elastic beams, a mass block and piezoresistors. The silicon piezoresistive type accelerometer is advantages in that the Josephson devices and the silicon piezoresistors are integrated; an acceleration signal can be converted into a current step signal, and compensation of the current step signal is strictly consistent with the compensation of the acceleration signal; the silicon piezoresistive type accelerometer is suitable for micromation; and the silicon piezoresistive type accelerometer has the advantage of reasonable structure, high sensitivity, digital output, the simple detection circuit, usage convenience and good reliability. The silicon piezoresistive type accelerometer can effectively solve the difficult problems, which exist in a high-overload type sensor, of low sensitivity, low effective resolution, the high lower limit of the detection threshold and the like.
Description
Technical field
The utility model relates to micro-inertial navigation technology association area, in particular to a kind of silicon piezoresistance type micro-mechanical accelerometer detecting based on josephson effect.
Background technology
Along with the development of micro mechanical system (MEMS) technology, it possesses, and cost is low, volume is little, easy mass production and the feature such as integration is good, more and more receives people's concern, is widely used in civilian and military field.But due to the restriction of Key Performance Indicator, micro mechanical sensor is not also applied fully in leading-edge fields such as military affairs, space flight, aviations.Wherein, sensitivity and range are the key indexs that micro mechanical sensor has much room for improvement, the sensor that utilizes main flow principle to manufacture, and the raising of its sensitivity all depends on reducing of the rigidity of structure, and high sensitivity is accompanied by small-range, low overload.
The ultimate principle of silicon piezoresistive effect acceleration transducer be the free-ended mass of semi-girder be subject to acceleration do used time semi-girder be subject to Moment produce stress, resistance is changed, improve the rigidity that range certainly will will improve beam, can reduce accordingly its resolution.The resistance variations producing in the time of the low input of high overload sensor is very little, and the output of corresponding bridge road is about 50-200nV/g, is substantially flooded by circuit noise.That is to say silicon piezoresistive effect acceleration transducer high overload and the highly sensitive contradiction that exists: realize high overload and just must abandon low g value to detect.
We once proposed that josephson effect was applied to piezoresistive effect and detected the high precision detection (utility application number: CN201210058424.4) that can realize faint stress, by Josephson device, the faint DC energy signal of pressure drag electric bridge output is transformed into AC energy signal, by can realize the accurate detection to direct current signal to the frequency detecting of AC energy signal, its resolution detects and can improve 2-3 the order of magnitude compared with traditional approach.For the application demand of accelerometer, it is simple that we expect that accelerometer has technique, and signal to noise ratio (S/N ratio) is high, characteristic easy to detect.Research is found by superconductor niobium, i.e. Nb has better ease for use and technological feasibility as the S-I-S type Josephson junction of superconducting layer composition, can prepare by magnetron sputtering vapo(u)rization system, and average molecular beam epitaxy technology has more low-cost advantage." one " font Josephson junction structure relatively " ten " font junction structure requires low to microwave, technique is more easily gone, be more suitable for the sensitive structure as mems accelerometer, simultaneously, it is lower that the digital step count detection of the electric current step effect of Josephson junction detects testing cost with respect to the a-c cycle of relative AC Josephson effect, more holds and realize high precision detection.
Utility model content
The utility model is intended at least solve one of technical matters existing in prior art.
In view of this, the utility model need to provide micro-mechanical accelerometer, this micro-mechanical accelerometer is the silicon piezoresistance type micro-mechanical accelerometer detecting based on josephson effect, at least can improve the accuracy of detection under accuracy of detection, the especially high overload of micro-mechanical accelerometer.
The utility model provides a kind of silicon piezoresistance type micro-mechanical accelerometer detecting based on josephson effect, comprising: bonding substrate, and support frame, support frame is located at bonding substrate top and is connected with bonding substrate; Elastic beam, elastic beam is for supporting the mass of accelerometer, and two ends connect respectively support frame and mass, and elastic beam upper surface is parallel with mass upper surface with support frame, and its thickness is less than mass thickness; Mass, mass is fixed in the middle of support frame by elastic beam, and thickness is less than support frame thickness; Many group voltage dependent resistor (VDR)s, every group of voltage dependent resistor (VDR) comprises four voltage dependent resistor (VDR)s, and wherein two voltage dependent resistor (VDR)s are located at elastic beam root, and another two voltage dependent resistor (VDR)s are located on support frame, and are positioned at the adjacent domain that support frame is connected with elastic beam; With many groups Josephson device, every group of Josephson device is positioned at support frame upper surface, and contiguous with two voltage dependent resistor (VDR)s of support frame upper surface layout, corresponding with each elastic beam position.
According to the silicon piezoresistance type micro-mechanical accelerometer detecting based on josephson effect of the utility model embodiment, by integrated to Josephson device and silicon pressure drag, utilize the volt-ampere catastrophe characteristics of josephson effect to measure the change in voltage that silicon pressure drag causes, the step that input acceleration is converted into electric current changes, can realize the digital accurate detection of acceleration by electric current step counting, rational in infrastructure, highly sensitive, Digital output, testing circuit is simple, easy to use, good reliability, applicable microminiaturized.Can effectively solve the difficult problems such as the muting sensitivity of high overload type sensor existence, low effective resolution, high detection threshold value lower limit.
According to an embodiment of the present utility model, described Josephson device is made up of silicon substrate, silicon dioxide, superconducting metal layer, Josephson junction, superconducting metal layer, voltage input positive pole, voltage input negative pole; On silicon substrate, be manufactured with silicon dioxide layer, on silicon dioxide layer, be deposited with superconducting metal layer, on the layer of superconducting metal, be manufactured with Josephson junction, Josephson is tied and is deposited with superconducting metal layer, it is anodal that superconducting metal layer is connected with voltage input, and superconducting metal layer is connected with voltage input negative pole.
The structural wood bed of material of described Josephson device is made up of layer-of-substrate silicon, silicon dioxide layer, niobium layer, oxidation lead layer, niobium layer; In layer-of-substrate silicon, be manufactured with silicon dioxide layer, i.e. SiO
2layer is manufactured with niobium layer on silicon dioxide layer, i.e. Nb layer is manufactured with alumina layer, i.e. Al on niobium layer
2o
3layer is manufactured with niobium layer, i.e. Nb layer on alumina layer.
According to an embodiment of the present utility model, described Josephson device adopts " one " font S-I-S structure, i.e. superconducting metal-insulation course-superconducting metal.Easier with respect to " ten " font S-I-N-S structural manufacturing process, be more suitable for being applied to micro-mechanical accelerometer.
According to an embodiment of the present utility model, described mass is " ten " font, and mass minor face is 1/6 of long limit, can effectively reduce the impact of micro-mechanical accelerometer high order mode.
According to an embodiment of the present utility model, four described voltage dependent resistor (VDR) doping contents are identical, and physical dimension is identical, but arranged direction difference, two adjacent arranged direction differ 90 °, i.e. resistance size opposite number each other, two relative arranged direction are consistent, and resistance size is identical.
According to an embodiment of the present utility model, four described voltage dependent resistor (VDR)s connect into wheatstone bridge circuits, and Qi Qiao road output terminal is connected in that the voltage input of Josephson device is anodal, voltage input negative pole, wherein the electric current electric current step pick-up unit of flowing through.Described electric current step pick-up unit is the device for detection of accelerometer output signal, by judging that rise-time of current angle realizes step counting, without obtaining precision current value, can realize digital detection.
According to an embodiment of the present utility model, described voltage dependent resistor (VDR) and Josephson device have respectively four groups, and position is relative with four elastic beams respectively.When application, select wherein one group or all, to improve yield rate or the reliability of accelerometer.
Additional aspect of the present utility model and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present utility model.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present utility model and advantage accompanying drawing below combination is understood becoming the description of embodiment obviously and easily, wherein:
Fig. 1 is the one-piece construction figure of the utility model embodiment;
Fig. 2 is the integrally-built vertical view of the utility model embodiment;
Fig. 3 is the A-A sectional view of Fig. 2 of the utility model embodiment
Fig. 4 is the mass vertical view of the utility model embodiment;
Fig. 5 is the Josephson device three-dimensional structure diagram of the utility model embodiment;
Fig. 6 is the Josephson device side view of the utility model embodiment;
Fig. 7 is the Josephson device structural drawing of the utility model embodiment;
Fig. 8 is that the Josephson device of the utility model embodiment detects schematic diagram;
Fig. 9 is the detection principle schematic of the utility model embodiment;
Shown in figure, list of numerals is as follows:
1, bonding substrate, 2, support frame, 3, mass, 4, elastic beam, 5, Josephson device, 6-9, voltage dependent resistor (VDR), 10, silicon substrate, 11, silicon dioxide, 12, superconducting metal layer, 13, Josephson junction, 14, superconducting metal layer, 15, voltage input is anodal, and 16, voltage input negative pole, 17, layer-of-substrate silicon, 18, silicon dioxide layer, 19, niobium layer, 20, oxidation lead layer, 21, niobium layer, 22-23, mass minor face, 24, quality block length limit.
Embodiment
Describe embodiment of the present utility model below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, only for explaining the utility model, and can not be interpreted as restriction of the present utility model.
In description of the present utility model, it will be appreciated that, orientation or the position relationship of the indications such as term " " center ", " on ", D score, 'fornt', 'back', " left side ", " right side " be based on orientation shown in the drawings or position relationship; be only the utility model and simplified characterization for convenience of description; rather than the device of indication or hint indication or element must have specific orientation, with specific orientation structure with operate, therefore can not be interpreted as restriction of the present utility model.
In description of the present utility model, it should be noted that, unless otherwise clearly defined and limited, term " is connected ", " connection " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connects integratedly; Can be mechanical connection, can be also electrical connection; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand the concrete meaning of above-mentioned term in the utility model.
Josephson effect is the quantum mechanical tunneling that Cooper electronic pair occurs while passing through two thin dielectric layers between superconducting metal.In the time that DC current is passed through superconducting tunnel junction, as long as current value is lower than a certain critical current I
c, similar to a superconductor, on tunnel junction, there is not any voltage, what flow through tunnel junction is supercurrent.If exceed critical electric current value I
c, on tunnel junction, there is a limited voltage, the proterties of tunnel junction is transitioned into the tunneling characteristics of normal electronics.With additional microwave signal excitation Josephson junction, make ω
f=n ω
rtime, in Josephson current, will comprise some DC component, at this moment, on the I-V of Josephson junction family curve, there is a series of constant-voltage power supply step to occur, step is spaced apart
, josephson frequency-voltage transitions is closed and is
In formula: ω
r---be the angular frequency of microwave excitation signal; H=/2 π (being Planck constant).This formula is josephson frequency-voltage transitions relational expression.This relational expression is blanket, when exciting signal frequency must be, and the step-length strict conformance of electric current step in its I-V relation.Therefore, just can accurately obtain magnitude of voltage as long as obtain step number n.Josephson effect and silicon piezoresistance type acceleration detection mode are combined, and be applied to the context of detection of micro-mechanical accelerometer, can realize the digital detection of acceleration, reduce input difficulty, improve the accuracy of detection of micro-mechanical accelerometer.
Below in conjunction with accompanying drawing, the utility model is described further:
As shown in Figure 1-2, according to embodiment of the present utility model based on josephson effect micro-mechanical accelerometer, comprising: bonding substrate 1; Support frame 2, support frame 2 is located at bonding substrate 1 top and is connected with bonding substrate 1; Josephson device 5, Josephson device 5 is positioned at support frame 2 upper surfaces, contiguous with the voltage dependent resistor (VDR) 6,9 that support frame 2 upper surfaces are arranged, and corresponding with each elastic beam 4 positions; Elastic beam 4 is for supporting the mass 3 of accelerometer, and two ends connect respectively support frame 2 and mass 3, and elastic beam 4 upper surfaces and support frame 2 are with mass 3 upper surfaces to parallel, and the thickness of elastic beam 4 is less than the thickness of mass 3; Mass 3 is fixed in the middle of support frame by elastic beam, and mass 3 thickness are less than support frame 2 thickness; With voltage dependent resistor (VDR) 6,7,8,9, wherein voltage dependent resistor (VDR) 8,9 is located at elastic beam 4 roots, and it is upper that voltage dependent resistor (VDR) 6,7 is located at support frame (2), and be positioned at the adjacent domain that support frame (2) is connected with elastic beam (4).
It should be noted that described voltage dependent resistor (VDR) 6,7,8,9 doping contents are identical, and physical dimension is identical, but arranged direction difference, two adjacent arranged direction differ 90 °, be resistance size opposite number each other, two relative arranged direction are consistent, and resistance size is identical.Wherein, the root area of voltage dependent resistor (VDR) 8,9 in elastic beam 4, be the most obvious region that elastic beam 4 produces strain, voltage dependent resistor (VDR) 6,7, Josephson device 5 are made on support frame 2, require voltage dependent resistor (VDR) 6,7, Josephson device 5 can not be subject to the impact of extraneous strain.
Voltage dependent resistor (VDR) 6,7,8,9 and Josephson device 5 have respectively four groups, position is relative with four elastic beams 4 respectively.When application, select wherein one group or all, to improve yield rate or the reliability of accelerometer.
As shown in Figure 3, according to an embodiment of the present utility model, the thickness of elastic beam 4 is less than mass 3 thickness, and the thickness of mass 3 is less than the thickness of support frame 2, to guarantee that elastic beam, as the most responsive structure of inertial force, can move up and down along Z axis simultaneously under the effect of inertial force.
Particularly, when based on josephson effect micro-mechanical accelerometer in the time having the input of faint acceleration, size the corresponding generation deformation of elastic beam 4 perception inertial force, mechanical signal is transformed into electrical signal by the voltage dependent resistor (VDR) 6,7,8,9 that elastic beam 4 roots are made.
As shown in Figure 4, according to an embodiment of the present utility model, mass 2 is " ten " font, and mass minor face 22,23 is for 1/6 of long limit 24, to reduce the impact of micro-mechanical accelerometer high order mode.
As shown in Fig. 5-6, according to an embodiment of the present utility model, Josephson device 5 adopts " one " font S-I-S structure, be superconducting metal-insulation course-superconducting metal, Josephson device 5 is made up of silicon substrate 10, silica 11, superconducting metal layer 12, Josephson junction 13, superconducting metal layer 14, voltage input positive pole 15, voltage input negative pole 16; On silicon substrate 10, be manufactured with silicon dioxide layer 11, on silicon dioxide layer 11, be deposited with superconducting metal layer 12, on superconducting metal layer 12, be manufactured with Josephson junction 13, on Josephson junction 13, be deposited with superconducting metal layer 14, superconducting metal layer 12 is connected with voltage input positive pole 15, and superconducting metal layer 14 is connected to voltage input negative pole 16.
As shown in Figure 7, according to an embodiment of the present utility model, the structural wood bed of material of Josephson device 5 is made up of layer-of-substrate silicon 17, silicon dioxide layer 18, niobium layer 19, oxidation lead layer 20, niobium layer 21; In layer-of-substrate silicon 17, be manufactured with silicon dioxide layer 18, i.e. SiO
2layer is manufactured with niobium layer 19 on silicon dioxide layer 18, i.e. Nb layer is manufactured with alumina layer 20, i.e. Al on niobium layer 19
2o
3layer is manufactured with niobium layer 21, i.e. Nb layer on alumina layer 20.It should be noted that, can adopt the mode of thermal oxide to realize reducing technology difficulty at silicon dioxide layer 18 and alumina layer 20, also can effectively prevent the discontinuous weak connection causing of barrier layer, the thickness of oxide layer is not about 10-100 not etc.Niobium layer 19 and niobium layer 21 can be prepared by magnetron sputtering vapo(u)rization system, average molecular beam epitaxy technology has more low-cost advantage, sedimentary environment is high vacuum, evaporation direction vertically downward, in deposition process, need strict quality, the thickness of controlling film forming, to avoid the quality of film forming and accuracy of detection and the sensitivity of thickness effect micro-mechanical accelerometer.
According to an embodiment of the present utility model, described Josephson device 5 can be converted to change in voltage the curent change of step-length strict conformance under certain frequency microwave irradiation as shown in Figure 8, and its step-length is only relevant with irradiation frequency.
As shown in Figure 9, according to an embodiment of the present utility model, it detects principle is the voltage dependent resistor (VDR) 6 on elastic beam 4,7,8,9 composition Wheatstone bridges, degree of will speed up signal is converted to change in voltage, voltage signal is loaded into voltage input anodal 15 and the voltage input negative pole 16 of Josephson device 5, by Josephson device 5, voltage signal is converted to the current signal that step changes, and can obtain the size of input acceleration by the counting of electric current step.
In the description of this instructions, the description of reference term " embodiment ", " some embodiment ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present utility model or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And specific features, structure, material or the feature of description can be with suitable mode combination in any one or more embodiment or example.
Although illustrated and described embodiment of the present utility model, those having ordinary skill in the art will appreciate that, in the situation that not departing from principle of the present utility model and aim, can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present utility model is limited by claim and equivalent thereof.
Claims (8)
1. the silicon piezoresistance type accelerometer detecting based on josephson effect, its characteristic is, comprising:
Bonding substrate (1);
Support frame (2), support frame (2) is located at bonding substrate (1) top and is connected with bonding substrate (1);
Elastic beam (4), elastic beam (4) is for supporting the mass (3) of accelerometer, two ends connect respectively support frame (2) and mass (3), elastic beam (4) upper surface is parallel with mass (3) upper surface with support frame (2), and its thickness is less than mass (3) thickness;
Mass (3), mass (3) is fixed in the middle of support frame (2) by elastic beam (4), and thickness is less than support frame (2) thickness;
Many group voltage dependent resistor (VDR)s, every group of voltage dependent resistor (VDR) comprises four voltage dependent resistor (VDR)s (6,7,8,9), two voltage dependent resistor (VDR)s (8 wherein, 9) be located at elastic beam (4) root, it is upper that another two voltage dependent resistor (VDR)s (6,7) are located at support frame (2), and be positioned at the adjacent domain that support frame (2) is connected with elastic beam (4);
With many groups Josephson device (5), every group of Josephson device (5) is positioned at support frame (2) upper surface, and two voltage dependent resistor (VDR)s (6 with support frame (2) upper surface layout, 7) contiguous, corresponding with each elastic beam (4) position.
2. the silicon piezoresistance type accelerometer detecting based on josephson effect according to claim 1, it is characterized in that, described Josephson device (5) is made up of silicon substrate (10), silicon dioxide (11), superconducting metal layer (12), Josephson junction (13), superconducting metal layer (14), voltage input anodal (15), voltage input negative pole (16); On silicon substrate (10), be manufactured with silicon dioxide layer (11), on silicon dioxide layer (11), be deposited with superconducting metal layer (12), on superconducting metal layer (12), be manufactured with Josephson junction (13), on Josephson junction (13), be deposited with superconducting metal layer (14), superconducting metal layer (12) is connected to voltage input anodal (15), and superconducting metal layer (14) is connected with voltage input negative pole (16).
3. the silicon piezoresistance type accelerometer detecting based on josephson effect according to claim 1, it is characterized in that, the structural wood bed of material of described Josephson device (5) is made up of layer-of-substrate silicon (17), silicon dioxide layer (18), niobium layer (19), oxidation lead layer (20), niobium layer (21); In layer-of-substrate silicon (17), be manufactured with silicon dioxide layer (18), i.e. SiO
2layer is manufactured with niobium layer (19) on silicon dioxide layer (18), i.e. Nb layer is manufactured with alumina layer (20), i.e. Al on niobium (19) layer
2o
3layer is manufactured with niobium layer (21), i.e. Nb layer on alumina layer (20).
4. the silicon piezoresistance type accelerometer detecting based on josephson effect according to claim 1, is characterized in that, described Josephson device (5) adopts " one " font S-I-S structure, i.e. one insulation course one superconducting metal, superconducting metal.
5. the silicon piezoresistance type accelerometer detecting based on josephson effect according to claim 1, is characterized in that, described mass (2) is " ten " font, and mass minor face (22,23) is 1/6 of long limit (24).
6. the silicon piezoresistance type accelerometer detecting based on josephson effect according to claim 1, it is characterized in that four described voltage dependent resistor (VDR)s (6,7,8,9) doping content is identical, and physical dimension is identical, but arranged direction difference, two adjacent arranged direction differ 90 °, be resistance size opposite number each other, two relative arranged direction are consistent, and resistance size is identical.
7. the silicon piezoresistance type accelerometer detecting based on josephson effect according to claim 1, it is characterized in that, described four voltage dependent resistor (VDR)s (6,7,8,9) connect into wheatstone bridge circuits, Qi Qiao road output terminal is connected in voltage input anodal (15), the voltage input negative pole (16) of Josephson device, wherein the electric current electric current step pick-up unit of flowing through.
8. the silicon piezoresistance type accelerometer detecting based on josephson effect according to claim 1, it is characterized in that, described four voltage dependent resistor (VDR)s (6,7,8,9) and Josephson device (5) have respectively four groups, wherein the position of every group of Joseph's device is relative with described four elastic beams (4) respectively.
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| CN103592464A (en) * | 2013-11-06 | 2014-02-19 | 中北大学 | Silicon piezoresistive type accelerometer carrying out detection based on Josephson effect |
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| CN103592464A (en) * | 2013-11-06 | 2014-02-19 | 中北大学 | Silicon piezoresistive type accelerometer carrying out detection based on Josephson effect |
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