CN203504199U - Photovoltaic power generation system based on MOSFET tube reflux prevention - Google Patents

Photovoltaic power generation system based on MOSFET tube reflux prevention Download PDF

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Publication number
CN203504199U
CN203504199U CN201320626708.9U CN201320626708U CN203504199U CN 203504199 U CN203504199 U CN 203504199U CN 201320626708 U CN201320626708 U CN 201320626708U CN 203504199 U CN203504199 U CN 203504199U
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battery panel
mosfet pipe
control module
photovoltaic
photovoltaic battery
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肖晨
李顺
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Foochow Dong Information Technology Co Ltd
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Foochow Dong Information Technology Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/56Power conversion systems, e.g. maximum power point trackers

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Abstract

The utility model discloses a photovoltaic power generation system based on MOSFET tube reflux prevention. The system comprises a storage battery, a control module, at least one photovoltaic battery panel, at least one voltage detection module and at least one MOSFET tube. A MOSFET tube is solely connected between each photovoltaic battery panel and the storage battery. Each voltage detection module is respectively connected with the negative electrode of each photovoltaic battery panel. Each voltage detection module is respectively connected with the control module. The control module is connected with the gate of the MOSFET tube and the voltage detection module. According to the utility model, the MOSFET tube is used to replace the tradition reflux diode, thus the inner resistance of the MOSFET tube in a turn-on state is very small, and is far below the inner resistance of an ordinary diode; inner energy loss in the photovoltaic power generation system is greatly reduced; and the system efficiency is improved.

Description

Photovoltaic generating system based on MOSFET pipe counterflow-preventing
Technical field
The utility model relates to a kind of photovoltaic generating system based on MOSFET pipe counterflow-preventing.
Background technology
Fast development along with photovoltaic industry, photovoltaic generation is also more and more employed, in photovoltaic generating system, photovoltaic battery panel is connected with storage battery, by photovoltaic battery panel, solar energy is changed into electric energy, and by power storage to storage battery, but the voltage of photovoltaic battery panel is lower than battery tension when sunray is weak, the electric current adverse current that just likely occurs storage battery to photovoltaic battery panel, thereby cause storage battery energy to waste.If even in photovoltaic battery panel parallel connected array, wherein a road photovoltaic module breaks down, output voltage is on the low side, so the electric current of other normal photovoltaic battery panels outputs also can adverse current to faulty board, cause whole array output voltage step-down, energy loss.In prior art, counterflow-preventing means are at the counterflow-preventing diode of connecting between photovoltaic battery panel and storage battery, thereby prevent electric current adverse current, be illustrated in figure 1 the photovoltaic generating system schematic diagram of prior art based on diode counterflow-preventing, but because the forward voltage drop tube of diode is larger, even the lower Schottky diode of pressure drop also has 0.2~0.3V, therefore adopt diode counterflow-preventing to have following shortcoming:
There is forward conduction voltage drop in the diode 1, being connected between photovoltaic battery panel and storage battery, while using silicon diode, pressure drop is generally 0.7V, if employing power diode, more than pressure drop even can reach 1V, even if use the lower Schottky diode of pressure drop also to have the pressure drop of 0.3V left and right, so greatly reduce the utilization ratio of the energy in photovoltaic generating system.
2, the diode due to these series connection has consumed many electric energy, and diode becomes the parts that heating is serious among system, has increased solar power system failure rate.
3, the electric energy of loss due to the diode of series connection converts heat to, has to use diode component and the heat dissipation element that volume is larger to dispel the heat to it, and system bulk and weight are increased, and has reduced the mechanical strength of photovoltaic generating system.
Utility model content
The purpose of this utility model is in order to overcome above-mentioned the deficiencies in the prior art, and a kind of photovoltaic generating system based on MOSFET pipe counterflow-preventing with more low-power consumption is provided.
A photovoltaic generating system based on MOSFET pipe counterflow-preventing, comprises storage battery and at least one photovoltaic battery panel, also comprises control module, at least one voltage detection module and at least one MOSFET pipe; Onlyly between each photovoltaic battery panel and storage battery be connected with a described MOSFET pipe, wherein, the source electrode of described MOSFET pipe is connected in the negative pole of described storage battery, and the drain electrode of MOSFET pipe is connected in the negative pole of described photovoltaic battery panel; Each voltage detection module input is connected to described each photovoltaic battery panel negative pole, and each voltage detection module output is also connected to control module, whether described voltage detection module is greater than battery tension for detection of the voltage of photovoltaic battery panel; Described control module is connected in grid and the voltage detection module of MOSFET pipe, described control module is for the input signal of receiver voltage detection module in each control cycle, and control module is controlled the MOSFET pipe conducting being connected with described photovoltaic battery panel when the voltage of photovoltaic battery panel is greater than battery tension, when the voltage of photovoltaic battery panel is less than battery tension, control module is controlled the MOSFET pipe cut-off being connected with described photovoltaic battery panel.
Wherein, described voltage detection module is connected in the negative pole of described photovoltaic battery panel, described voltage detection module comprises the first triode of NPN type and the second triode of positive-negative-positive, the collector electrode of described the first triode is connected in the negative pole of described photovoltaic battery panel, the emitter of described the first triode is connected in the base stage of the second triode, the grounded collector of the base stage of described the first triode and the second triode, the emitter of described the second triode is connected in the voltage detecting pin of control module.
Wherein, described control cycle comprises sense cycle and execution cycle, in described sense cycle, control module is controlled the cut-off of MOSFET pipe, control module reads the testing result of voltage detection module, in the described execution cycle, when the voltage of photovoltaic battery panel is greater than battery tension, control module is controlled the MOSFET pipe conducting being connected with described photovoltaic battery panel, otherwise control module is controlled the MOSFET pipe cut-off being connected with described photovoltaic battery panel.
Wherein, described control module is single-chip microcomputer.
Wherein, described sense cycle is 1/500~1/2000 of the execution cycle.
The beneficial effects of the utility model are: in the utility model, adopt MOSFET pipe to substitute the counter-current diode in tradition; because of the internal resistance when the conducting of MOSFET pipe very little; be significantly less than general diode; therefore greatly reduce the internal loss of the energy in photovoltaic generating system; improve system effectiveness; the voltage of photovoltaic battery panel and storage battery is carried out to cycle detection simultaneously; can to photovoltaic battery panel, carry out counterflow-preventing protection timely; and the time of voltage detecting only account for the sub-fraction time of whole cycle period, therefore can guarantee the efficiency of energy utilization of this system.
Accompanying drawing explanation
Fig. 1 is the photovoltaic generating system schematic diagram of prior art based on diode counterflow-preventing;
Fig. 2 is the block diagram of the photovoltaic generating system embodiment of the utility model based on MOSFET pipe counterflow-preventing;
Fig. 3 is the block diagram of photovoltaic generating system another embodiment of the utility model based on MOSFET pipe counterflow-preventing;
Fig. 4 is the circuit diagram of the photovoltaic generating system based on MOSFET pipe counterflow-preventing shown in Fig. 2.
Main illustration:
1-photovoltaic battery panel; 2-storage battery; 3-MOSFET pipe; 4-control module; 5-voltage detection module.
Embodiment
At the MOSFET pipe described in present specification, be: metal-oxide layer-semiconductor-field-effect transistor, is called for short metal-oxide half field effect transistor, English full name (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET).By describing technology contents of the present utility model, structural feature in detail, being realized object and effect, below in conjunction with execution mode and coordinate accompanying drawing to be explained in detail.
Fig. 2 and Fig. 3 are the block diagram of photovoltaic generating system two embodiments of the utility model based on MOSFET pipe counterflow-preventing.Should comprise storage battery 2 and at least one photovoltaic battery panel 1 by the photovoltaic generating system based on MOSFET pipe counterflow-preventing, also comprise control module 4, at least one voltage detection module 5 and at least one MOSFET pipe 3; Onlyly between each photovoltaic battery panel 1 and storage battery 2 be connected with a described MOSFET pipe 3, wherein, the source electrode of described MOSFET pipe 3 is connected in described storage battery 2, and the drain electrode of MOSFET pipe 3 is connected in described photovoltaic battery panel 1; The input of each voltage detection module 5 is connected to described each photovoltaic battery panel 1 negative pole, and the output of each voltage detection module 5 is also connected to control module 4, whether described voltage detection module 5 is greater than storage battery 2 voltages for detection of the voltage of photovoltaic battery panel 1; Described control module 4 is connected in grid and the voltage detection module 5 of MOSFET pipe 3, described control module 4 is for the input signal of receiver voltage detection module 5 in each control cycle, and the MOSFET that control module 4 controls are connected with described photovoltaic battery panel 1 when the voltage of photovoltaic battery panel 1 is greater than storage battery 2 voltage manages 3 conductings, MOSFET pipe 3 cut-offs that control module 4 controls are connected with described photovoltaic battery panel 1 when the voltage of photovoltaic battery panel 1 is less than storage battery 2 voltage.
Described MOSFET pipe 3 comprises the peripheral circuit that drives this MOSFET pipe 3; the present embodiment does not specifically limit this peripheral circuit, and the peripheral circuit that can drive this MOSFET pipe 3 that all this technical field technical staff are known all belongs in the utility model protection range.
The operation principle of the described photovoltaic battery panel counterflow-preventing controller based on MOSFET pipe is, whether the voltage that detects photovoltaic battery panel 1 by described voltage detection module 5 in control module 4 described in each control cycle is greater than storage battery 2 voltages, if the voltage of photovoltaic battery panel 1 is greater than the voltage of storage battery 2, control module 4 is controlled the MOSFET being connected with this photovoltaic battery panel and is managed 3 conductings, 1 pair of storage battery 2 of photovoltaic battery panel is charged, if the voltage of photovoltaic battery panel 1 is less than the voltage of storage battery 2, now photovoltaic battery panel 1 cannot charge to storage battery 2, there will be adverse current phenomenon, therefore control module 4 is controlled MOSFET pipe 3 cut-offs that are connected with this photovoltaic battery panel, prevent that storage battery 2 electric current adverse currents are to photovoltaic battery panel 1.
Fig. 4 is the circuit theory diagrams of the preferred implementation of the photovoltaic generating system of the utility model based on MOSFET pipe counterflow-preventing.Described voltage detection module 5 is connected to the negative pole of described photovoltaic battery panel 1, described voltage detection module 5 comprises the first triode Q2 of NPN type and the second triode Q3 of positive-negative-positive, the collector electrode of described the first triode Q2 is connected in the negative pole of described photovoltaic battery panel 1, the emitter of described the first triode Q2 is connected in the base stage of the second triode Q3, the grounded collector of the base stage of described the first triode Q2 and the second triode Q3 (battery terminal negative), the emitter of described the second triode Q3 is connected in the voltage detecting pin of control module 4.
When the voltage swing between detection photovoltaic battery panel 1 and storage battery 2 is related to, control module 4 is first controlled the cut-off of described MOSFET pipe, if the voltage of photovoltaic battery panel 1 is higher than storage battery 2 voltages (solar energy plank can charge the battery), the parasitic diode that photovoltaic battery panel 1 and storage battery 2 are managed 3 inside by MOSFET forms loop.Photovoltaic battery panel 1 cathode voltage is lower than system reference earth potential, the first triode Q2 is operated in inversion state, the voltage of the emitter output of the first triode Q2 is low level (likely lower than system reference earth potential), now, the second triode Q3 conducting, the level of its emitter is that low level (can be lower than ground reference, the level nature that meets general single-chip microcomputer pin requires), control module 4 reads low level state, judgement photovoltaic electroplax 1 voltage is higher than storage battery 2 voltages, therefore control module 4 is controlled described MOSFET and is managed 3 conductings storage battery 2 is charged.If photovoltaic battery panel 1 voltage is lower than storage battery 2 voltages (solar energy plank cannot charge the battery), MOSFET manages the parasitic diode cut-off of 3 inside.The first triode Q2 is operated in cut-off state, the level of the emitter of the second triode Q3 is just high level, control module 4 reads high level state, judgement photovoltaic electroplax 1 voltage is lower than storage battery 2 voltages, for preventing that storage battery 2 electric current adverse currents from entering photovoltaic battery panel 1, control module 4 is controlled described MOSFET pipe 3 cut-offs.
In the present embodiment, described control cycle comprises sense cycle and execution cycle, in described sense cycle, control module 4 is controlled 3 cut-offs of MOSFET pipe, control module 4 reads the testing result of voltage detection module 5, in the described execution cycle, control module 4 is controlled MOSFET according to the testing result of voltage detection module 5 and is managed 3 conductings or cut-off, when the voltage of photovoltaic battery panel 1 is greater than storage battery 2 voltage, control module 4 is controlled the MOSFET being connected with described photovoltaic battery panel 1 and is managed 3 conductings, otherwise, control module 4 is controlled MOSFET pipe 3 cut-offs that are connected with described photovoltaic battery panel 1.For control module 4 can be controlled MOSFET pipe 3 more accurately, can guarantee again effective utilization of the energy simultaneously, wherein, described sense cycle is 1/500~1/2000 of the execution cycle.
When the ratio of sense cycle described in described control cycle is 1S and execution cycle is 1/1000, described sense cycle is about 1mS, described control module 4 detects the voltage of photovoltaic battery panel 1 and storage battery 2 every 1S, therefore can control timely MOSFET manages 3 conductings or cut-off, when the voltage of photovoltaic battery panel 1 is greater than storage battery 2 voltage, described MOSFET pipe 3 in whole control cycle only the 1mS in sense cycle in cut-off state, in the execution cycle all in conducting state, the time ending because of MOSFET pipe only accounts for 1/1000 of ON time, can think that MOSFET pipe is all conducting, therefore photovoltaic battery panel 1 is stored to the solar energy of conversion in storage battery 2 completely, when the voltage of photovoltaic battery panel 1 is less than storage battery 2 voltage, described MOSFET pipe 3 all in cut-off, therefore can prevent the generation of adverse current phenomenon in sense cycle and performance period.
In the present embodiment, for control module 4 can be detected timely to the voltage of photovoltaic battery panel 1 and storage battery 2, also for a control module 4, can control a plurality of MOSFET simultaneously and manage 3, and the energy that assurance circuit consumes is much smaller than the described before energy that directly series diode consumes between photovoltaic battery panel 1 and storage battery 2.Described control module 4 is low power consumption high efficiency single-chip microcomputer.Concrete the present embodiment selects 8 single-chip microcomputers of ST company as described control module, and the number of single-chip microcomputer and encapsulation specifically determined by the number of photovoltaic battery panel, and the utility model is not done concrete restriction.
According to the photovoltaic generation demand of conventional 10A/60V, it is example.Select MOFET pipe 3, size only has 6.4x3.9mm.MOSFET pipe 3 internal resistance when conducting is very little, and for 11m Ω left and right, if flow through the electric current of 6A, pressure drop also only has 66mV left and right, and uses the conduction voltage drop of the Schottky diode of 10A/60V to reach 0.6V, more than just not reached 15x10mm containing heat sink sizes.By control module 4 control that the conducting of MOSFET pipe 3 or cut-off are charged to storage battery 2 and the electric current adverse current that prevents storage battery 2 to photovoltaic battery panel 1, thereby substitute the counter-current diode in tradition, improved the efficiency of energy utilization of system, and because the tube voltage drop on MOSFET pipe 3 is low, caloric value is little, caloric value while comparing same current with diode is far smaller than diode, so can be because of the excessive heating burnout of electric current, without using radiator to dispel the heat yet.
The beneficial effects of the utility model are in sum: the counter-current diode that adopts MOSFET pipe 3 to substitute in tradition in the utility model, because of MOSFET pipe 3 internal resistance when the conducting very little, be significantly less than general diode, therefore greatly reduce the internal loss of the energy in photovoltaic generating system, improve system effectiveness, the voltage of photovoltaic battery panel 1 and storage battery 2 is carried out to cycle detection simultaneously, can to photovoltaic battery panel, carry out counterflow-preventing protection timely, and the time of voltage detecting only accounts for the sub-fraction time of whole cycle period, therefore can guarantee the efficiency of energy utilization of this system.
The foregoing is only embodiment of the present utility model; not thereby limit the scope of the claims of the present utility model; every equivalent structure or conversion of equivalent flow process that utilizes the utility model specification and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.

Claims (5)

1. the photovoltaic generating system based on MOSFET pipe counterflow-preventing, comprises storage battery and at least one photovoltaic battery panel, it is characterized in that, also comprises control module, at least one voltage detection module and at least one MOSFET pipe;
Onlyly between each photovoltaic battery panel and storage battery be connected with a described MOSFET pipe, wherein, the source electrode of described MOSFET pipe is connected in described battery terminal negative, and the drain electrode of MOSFET pipe is connected in described photovoltaic battery panel negative pole;
Each voltage detection module input is connected to described each photovoltaic battery panel negative pole, and the output of each voltage detection module is also connected to control module, whether described voltage detection module is greater than battery tension for detection of the voltage of photovoltaic battery panel;
Described control module is connected in grid and the voltage detection module of MOSFET pipe, described control module is for the input signal of receiver voltage detection module in each control cycle, and control module is controlled the MOSFET pipe conducting being connected with described photovoltaic battery panel when the voltage of photovoltaic battery panel is greater than battery tension, when the voltage of photovoltaic battery panel is less than battery tension, control module is controlled the MOSFET pipe cut-off being connected with described photovoltaic battery panel.
2. according to the photovoltaic generating system based on MOSFET pipe counterflow-preventing described in claim power 1, it is characterized in that, described voltage detection module is connected in the negative pole of described photovoltaic battery panel, described voltage detection module comprises the first triode of NPN type and the second triode of positive-negative-positive, the collector electrode of described the first triode is connected in the negative pole of described photovoltaic battery panel, the emitter of described the first triode is connected in the base stage of the second triode, the grounded collector of the base stage of described the first triode and the second triode, the emitter of described the second triode is connected in the voltage detecting pin of control module.
3. the photovoltaic generating system based on MOSFET pipe counterflow-preventing according to claim 1, it is characterized in that, described control cycle comprises sense cycle and execution cycle, in described sense cycle, control module is controlled the cut-off of MOSFET pipe, control module reads the testing result of voltage detection module, in the described execution cycle, when the voltage of photovoltaic battery panel is greater than battery tension, control module is controlled the MOSFET pipe conducting being connected with described photovoltaic battery panel, otherwise control module is controlled the MOSFET pipe cut-off being connected with described photovoltaic battery panel.
4. the photovoltaic generating system based on MOSFET pipe counterflow-preventing according to claim 1, is characterized in that, described control module is single-chip microcomputer.
5. the photovoltaic generating system based on MOSFET pipe counterflow-preventing according to claim 3, is characterized in that, described sense cycle is 1/500~1/2000 of the execution cycle.
CN201320626708.9U 2013-10-11 2013-10-11 Photovoltaic power generation system based on MOSFET tube reflux prevention Expired - Lifetime CN203504199U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103490447A (en) * 2013-10-11 2014-01-01 福州东日信息技术有限公司 Photovoltaic power generation system based on MOSFET (metal-oxide-semiconductor field effect transistor) counter-current prevention
CN115241925A (en) * 2022-09-01 2022-10-25 浙江奔一电气有限公司 Photovoltaic parallel optimizer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103490447A (en) * 2013-10-11 2014-01-01 福州东日信息技术有限公司 Photovoltaic power generation system based on MOSFET (metal-oxide-semiconductor field effect transistor) counter-current prevention
CN103490447B (en) * 2013-10-11 2015-05-13 福州东日信息技术有限公司 Photovoltaic power generation system based on MOSFET (metal-oxide-semiconductor field effect transistor) counter-current prevention
CN115241925A (en) * 2022-09-01 2022-10-25 浙江奔一电气有限公司 Photovoltaic parallel optimizer

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Granted publication date: 20140326