CN203339138U - Modified injection molding packaging structure of high-power semiconductor module - Google Patents

Abstract

The utility model discloses an improved injection molding packaging structure of a high-power semiconductor module, which belongs to the packaging technical scope of semiconductor device manufacturing. Weld the ceramic insulating sheet on the metal base plate, weld the common electrode and the anode lead of the No. 2 chip on the ceramic insulating sheet at intervals, connect the No. 1 semiconductor chip and the cathode of the No. The cathode of the chip is drawn out from the bridge; the No. 2 semiconductor chip is welded on the anode lead-out electrode of the No. 2 chip, and the cathode bridge welded on the top surface of the No. 2 semiconductor chip is connected to the common electrode. The utility model improves the packaging structure and packaging process of the plastic shell of the module. The upper injection molding machine can inject and mold multiple pieces at one time, so that the thickness of the semiconductor module is reduced to about one-third, and the weight of the module is reduced. The airtightness of the module is improved, the packaging speed of the module is improved, and the reliability and production efficiency of the module are greatly improved.

Description

Improved Injection Packaging Structure of High Power Semiconductor Module

technical field

The utility model belongs to the encapsulation range of semiconductor device manufacture, in particular to an improved injection molding encapsulation structure of a high-power semiconductor module.

Background technique

The packaging structure of a traditional high-power semiconductor module is shown in Figure 1. A ceramic insulating sheet 3 is placed on the metal base plate 2, and the common electrode 7 and the second chip anode lead-out electrode 10 are welded on the ceramic insulating sheet 3 at intervals. Place the No. 1 semiconductor chip 4 on the top and place the No. 2 semiconductor chip 9 on the anode lead-out electrode 10 of the second chip. The gate cathode lead-out terminal 11 is drawn out from the module plastic upper cover 14 after passing through the plastic sealing support 15, and the module plastic upper cover 14 is pre-embedded. The three electrodes are externally connected to the nut 13, and the three electrodes are drawn out from the upper cover 14 and then bent and pressed on the embedded nut 13. It can be seen that the packaging structure of the semiconductor module has a complex shape, making the thickness of the high-power semiconductor module reach more than 28mm ; And before the cover is covered, silicone gel and epoxy resin are filled in the gap of the module. The two filling times are very long. It is a relatively big trouble, due to the requirements of assembly, the thickness is limited, and it is difficult to reduce the thickness.

Utility model content

The object of the present invention is to propose an improved injection molding packaging structure and packaging method for high-power semiconductor modules, which are characterized in that ceramic insulating sheets 3 are welded on the metal base plate 2, and the common electrode 7 and two electrodes are welded at intervals on the ceramic insulating sheet 3. The No. chip anode lead-out electrode 10 is connected to the No. 1 semiconductor chip 4 and the No. 1 chip cathode bridge 6 on the common electrode 7, and the No. 1 chip cathode lead 5 is drawn from the No. 1 chip cathode bridge 6; the No. 2 semiconductor chip 9 is welded On No. 2 chip anode lead-out electrode 10, No. 2 chip cathode bridge 8 welded on the top surface of No. 2 semiconductor chip 9 is connected to common electrode 7, and the two cathode bridges are connected together by two semiconductor chips, The gate cathode lead-out terminal 11 is fixed on the plastic shell after plastic sealing, and the gate and cathode internal lead wires 12 welded on the top surface of the second semiconductor chip 9 or the first chip protrude from the top surface of the plastic shell 1 through the gate cathode lead-out terminal 11 . the

The common electrode 7 , the cathode lead 5 of the first chip and the anode lead 10 of the second chip all protrude from the top surface of the plastic casing 1 .

The thickness of the semiconductor module is 10-12mm or thinner.

The beneficial effect of the utility model is that the ceramic piece, the electrode, the chip and the bridge are fixed on the bottom plate by welding in sequence, the structure of the plastic shell of the module is improved, and the injection molding machine is used for one-time injection molding, so that the thickness of the semiconductor module is reduced to one-third Left and right, the airtightness of the module is improved, and the reliability and production efficiency of the module are greatly improved.

Description of drawings

FIG. 1 is a schematic diagram of a package structure of a traditional high-power semiconductor module.

Fig. 2 is a schematic diagram of the packaging structure of the improved high-power semiconductor module.

Detailed ways

The utility model proposes an improved injection molding package structure of a high-power semiconductor module, which will be described below in conjunction with the accompanying drawings.

Figure 2 is a schematic diagram of the package structure of the improved high-power semiconductor module. In the figure, the ceramic insulating sheet 3 is welded on the metal base plate 2, the common electrode 7 and the anode lead-out electrode 10 of the No. Bridge 6, No. 1 chip cathode lead 5 is drawn from No. 1 chip cathode bridge 6; No. 2 semiconductor chip 9 is welded on the anode lead-out electrode 10 of No. 2 chip, and No. The chip cathode bridge 8 is connected to the common electrode 7, and the two cathode bridges connect the two semiconductor chips together. The gate cathode lead-out terminal 11 is fixed on the plastic shell after plastic sealing, and is welded on the second semiconductor chip 9 or one The gate and cathode internal lead wires 12 on the top surface of the No. chip protrude from the top surface of the plastic casing 1 by the gate cathode lead terminal 11.

Apply silicone gel protection on the chip before plastic sealing, and put it on the injection molding machine for one-time injection molding. With this improved structure, the thickness of the semiconductor module can be reduced to about 10mm, and the airtightness of the module can be improved, greatly improving the reliability and reliability of the module. Productivity.

Claims (3)

1. An injection molding package structure of an improved high-power semiconductor module is characterized in that a ceramic insulating sheet is welded on a metal base plate, a common electrode and No. two chip anode lead-out electrodes are welded at intervals on the ceramic insulating sheet, and a The No. 1 semiconductor chip and the No. 1 chip cathode cross the bridge, and the No. 1 chip cathode is drawn from the No. 1 chip cathode bridge; the No. 2 semiconductor chip is welded on the No. The cathode bridge of the second chip is connected to the common electrode. The two cathode bridges connect the two semiconductor chips together. The gate and cathode lead-out terminals are fixed on the module after plastic sealing, and are welded to the second semiconductor chip or the first semiconductor chip. The gate and cathode internal lead wires on the top surface protrude from the top surface of the module plastic shell through the gate cathode lead terminal, and the common electrode, the cathode lead of the No. 1 chip and the anode lead of the No. 2 chip all protrude from the top face of the module plastic shell. 2. The improved injection molding package structure of a high-power semiconductor module according to claim 1, wherein the common electrode, the cathode lead of the first chip and the anode lead of the second chip all protrude from the top surface of the plastic casing. 3. The improved injection molding package structure of a high-power semiconductor module according to claim 1, wherein the thickness of the semiconductor module is 10-12mm or thinner.

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