CN203084206U

CN203084206U - Ray detector

Info

Publication number: CN203084206U
Application number: CN 201320033397
Authority: CN
Inventors: 雷海东
Original assignee: Jianghan University
Current assignee: Jianghan University
Priority date: 2013-01-22
Filing date: 2013-01-22
Publication date: 2013-07-24
Anticipated expiration: 2023-01-22

Abstract

The utility model discloses a ray detector which belongs to the ray detection field. The ray detector comprises a semiconductor module which receives ray irradiation under reverse bias voltage to generate induced charges, a charge collection module for collecting induced charges generated by the semiconductor module and generating pulse current, a pre-amplification module for converting the pulse current into voltage signals and a voltage detection module for determining ray intensity according to the voltage signals, wherein the charge collection module is electrically connected with the semiconductor module and the pre-amplification module respectively, and the pre-amplification module is electrically connected with the voltage detection module. The semiconductor module receives ray irradiation, converts ray energy into charges and collects the charges. Pulse current is generated and converted into voltage signals, and the ray intensity is then determined according to the voltage signals. The ray detector is simple and highly sensitive and accurate, and the voltage signal and ray energy are in linear relation.

Description

Ray detecting device

Technical field

The utility model relates to the X-ray detection X technical field, particularly a kind of ray detecting device.

Background technology

Ray is meant by various radiomaterials particle that launch, that have particular energy or photon line.Transmitted intensity is one of important physical amount of weighing x ray diffraction, represents radiating matter in the unit interval, the number of times of the atomic disintegration that is taken place.

In order to obtain the numerical value of transmitted intensity, need detect transmitted intensity, particularly in the nuclear physics field and departments such as geology, mine, metallurgy, oil, medical science, environmentology, transmitted intensity detects and is even more important.

The utility model content

For sense radiation intensity, the utility model embodiment provides a kind of ray detecting device.Described technical scheme is as follows:

The utility model embodiment provides a kind of ray detecting device, and described device comprises:

Be used under the reverse bias voltage effect receiving semiconductor module that radiation exposure produces induced charge, be used to collect described induced charge and the charge-trapping module that produces pulse current that described semiconductor module produces, be used for that described pulse current is converted into the pre-amplifying module of voltage signal and be used for judging the voltage detection module of the intensity of described ray according to described voltage signal, described charge-trapping module is electrically connected with described semiconductor module and described pre-amplifying module respectively, and described pre-amplifying module is electrically connected with described voltage detection module.

Wherein, described semiconductor module comprises the P-N knot of the element silicon formation that is doped with boron or P elements, perhaps is doped with the P-N knot of the Ge element formation of boron or P elements.

Preferably, described charge-trapping module comprises plane-parallel capacitor C.

Wherein, described pre-amplifying module comprises prime amplifier A and feedback capacity Cf, described feedback capacity Cf is electrically connected with inverting input and the output terminal of described prime amplifier A, and two input ends of described prime amplifier A are electrically connected with two plates of described plane-parallel capacitor C respectively.

Wherein, described voltage detection module comprises the processor that is used for the analog to digital converter that voltage signal is gathered and is used for judging according to the data that collect transmitted intensity, and described analog to digital converter is electrically connected with described prime amplifier A and described processor respectively.

The beneficial effect that the technical scheme that the utility model embodiment provides is brought is:

By adopting semiconductor module to receive ray and ray energy being converted into electric charge and collection, produce pulse current and also be converted into voltage signal, judge transmitted intensity according to voltage signal again, device is simple, highly sensitive, voltage signal and ray energy are linear, the degree of accuracy height.

Description of drawings

In order to be illustrated more clearly in the technical scheme among the utility model embodiment, the accompanying drawing of required use is done to introduce simply in will describing embodiment below, apparently, accompanying drawing in describing below only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.

Fig. 1 is the ray detecting device structural representation that the utility model embodiment provides;

Fig. 2 is the charge-trapping module that provides of the utility model embodiment and the circuit diagram of pre-amplifying module.

Embodiment

For making the purpose of this utility model, technical scheme and advantage clearer, the utility model embodiment is described in further detail below in conjunction with accompanying drawing.

Embodiment

The utility model embodiment provides a kind of ray detecting device, and referring to Fig. 1, this device comprises: semiconductor module 1, charge-trapping module 2, pre-amplifying module 3 and voltage detection module 4; Charge-trapping module 2 is electrically connected with semiconductor module 1 and pre-amplifying module 3 respectively, and pre-amplifying module 3 is electrically connected with voltage detection module 4; Wherein, semiconductor module 1 is used under the reverse bias voltage effect, receives radiation exposure and produces induced charge; Charge-trapping module 2 is used for the induced charge of collection semiconductor module 1 generation and produces pulse current; Pre-amplifying module 3 is used for pulse current is converted into voltage signal; Voltage detection module 4 is used for judging transmitted intensity according to voltage signal.

Know that easily reverse bias is meant in semi-conductive P district and connects power cathode that the N district connects positive source; Preferably, the size of reverse bias voltage is 5-15V.

Wherein, semiconductor module 1 comprises the P-N knot of the element silicon formation that is doped with boron or P elements, perhaps is doped with the P-N knot of the Ge element formation of boron or P elements.

Referring to Fig. 2, charge-trapping module 2 comprises plane-parallel capacitor C.Two plates of this plane-parallel capacitor C are used for collecting positive charge and negative charge respectively, and two plates of plane-parallel capacitor C are connected with P-N knot two ends respectively.

Referring to Fig. 2, pre-amplifying module 3 comprises prime amplifier A and feedback capacity Cf, described feedback capacity Cf is electrically connected with inverting input and the output terminal of described prime amplifier A, and two input ends of prime amplifier A are electrically connected with two plates of plane-parallel capacitor C respectively.

Further, voltage detection module 4 comprises the processor that is used for the analog to digital converter that voltage signal is gathered and is used for judging according to the data that collect transmitted intensity, and analog to digital converter is electrically connected with prime amplifier A and processor respectively.

Under the reverse bias voltage effect, the P-N knot forms one and has certain thickness depletion region, after charged particle or ray incident, depleted district is absorbed, lose its whole energy, in depletion region, produce electron-hole pair (being charge carrier), under reverse bias voltage, electronics, the very fast separation in hole is moved electronics to the polarity electrode opposite with it respectively, the hole electrically chargedly finally collected by two plates of the plane-parallel capacitor C of charge-trapping module 2, just be collected, negative charge is pooled to plane-parallel capacitor C and goes up the generation induced charge, along with induced charge constantly is collected, thereby produce pulse current, be delivered to pre-amplifying module 3.

Prime amplifier A is converted to voltage signal with pulse current, exports voltage detection module 4 to; Clearly, size and the transmitted intensity of the voltage U o of voltage signal have linear relationship, so voltage detection module 4 is come the intensity of detected ray in view of the above.

Particularly, after charged particle or ray incident, lose whole ENERGY E, produce electron-hole pair in depletion region, under the reverse bias voltage effect, the very fast separation in electronics, hole is moved to the polarity electrode opposite with it respectively, is finally collected by electrode.If W is for producing the required average energy of a pair of electron-hole pair, n is an absorption efficiency, and then the charge Q of Shou Jiing is nEq/W, and wherein q is an electric quantity unit, so nq/W is a constant, the size of charge Q shows the energy size of incident particle or ray so.Because the charge Q size has corresponding relation with electric current I, and voltage U o and I have corresponding relation, so voltage signal and ray energy are linear, so processor can be judged transmitted intensity according to the size of Uo.Particularly, how to judge that according to Uo transmitted intensity belongs to common technique, do not giving unnecessary details here.

The utility model embodiment receives ray and ray energy is converted into electric charge and collection by adopting semiconductor module, produce pulse current and be converted into voltage signal, judge transmitted intensity according to voltage signal again, device is simple, highly sensitive, voltage signal and ray energy are linear, the degree of accuracy height.

The all or part of step that one of ordinary skill in the art will appreciate that realization the foregoing description can be finished by hardware, also can instruct relevant hardware to finish by program, described program can be stored in a kind of computer-readable recording medium, the above-mentioned storage medium of mentioning can be a ROM (read-only memory), disk or CD etc.

The above only is preferred embodiment of the present utility model, and is in order to restriction the utility model, not all within spirit of the present utility model and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within the protection domain of the present utility model.

Claims

1. a ray detecting device is characterized in that, described device comprises:

Be used under the reverse bias voltage effect, receiving the semiconductor module (1) that radiation exposure produces induced charge, the charge-trapping module (2) that is used to collect the described induced charge of described semiconductor module (1) generation and produces pulse current, be used for that described pulse current is converted into the pre-amplifying module (3) of voltage signal and be used for judging the voltage detection module (4) of the intensity of described ray according to described voltage signal, described charge-trapping module (2) is electrically connected with described semiconductor module (1) and described pre-amplifying module (3) respectively, and described pre-amplifying module (3) is electrically connected with described voltage detection module (4).

2. device according to claim 1 is characterized in that, described semiconductor module (1) comprises the P-N knot of the element silicon formation that is doped with boron or P elements, perhaps is doped with the P-N knot of the Ge element formation of boron or P elements.

3. device according to claim 1 is characterized in that, described charge-trapping module (2) comprises plane-parallel capacitor C.

4. device according to claim 1, it is characterized in that, described pre-amplifying module (3) comprises prime amplifier A and feedback capacity Cf, described feedback capacity Cf is electrically connected with inverting input and the output terminal of described prime amplifier A, and two input ends of described prime amplifier A are electrically connected with two plates of described plane-parallel capacitor C respectively.

5. device according to claim 4, it is characterized in that, described voltage detection module (4) comprises the processor that is used for the analog to digital converter that voltage signal is gathered and is used for judging according to the data that collect transmitted intensity, and described analog to digital converter is electrically connected with described prime amplifier A and described processor respectively.