CN202872639U - Boost circuit - Google Patents

Boost circuit Download PDF

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Publication number
CN202872639U
CN202872639U CN 201220471233 CN201220471233U CN202872639U CN 202872639 U CN202872639 U CN 202872639U CN 201220471233 CN201220471233 CN 201220471233 CN 201220471233 U CN201220471233 U CN 201220471233U CN 202872639 U CN202872639 U CN 202872639U
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China
Prior art keywords
resistance
links
electric capacity
triode
chip
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Expired - Fee Related
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CN 201220471233
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Chinese (zh)
Inventor
刘桐林
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TIANJIN TONGLIN METAL PRODUCTS CO Ltd
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TIANJIN TONGLIN METAL PRODUCTS CO Ltd
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Priority to CN 201220471233 priority Critical patent/CN202872639U/en
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Publication of CN202872639U publication Critical patent/CN202872639U/en
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Abstract

The utility model aims at providing a boost circuit which can adjust a relatively low direct voltage to a relatively high direct voltage. The technical scheme of the utility model is that, the boost circuit is characterized by comprising an input module, a boost module, a comparison module, an adjustment module and an output module, wherein the input module comprises an input terminal which is connected with an anode of a first capacitor; and the input terminal is connected with one terminal of a second capacitor, and the other terminal of the second capacitor is connected with a cathode of the first capacitor. The beneficial effects of the utility model are that, by using the boost circuit, an unstable direct voltage can be converted into a size adjustable stable direct voltage, facilitating the use of the people, particularly, facilitating the use in the condition that the power source is unstable in outdoors, and thereby protecting electric appliances.

Description

A kind of booster circuit
Technical field
The utility model relates to a kind of circuit, relates in particular to a kind of booster circuit.
Background technology
More and more be subject to modern's favor along with the activities such as day by day raising outdoor activities, especially camping of living standards of the people.Just mean out of doors to lack stable power source, especially mobile phone, panel computer, navigator all want electric power to drive for the modern, can realize stable power source by house generator large-scale outdoor activities.But for the people who goes into battle with a light pack, can only prepare some small-sized generating equipments, similarly be solar panels, small-sized hand formula generator etc.But the power source that this generating gets mostly is direct current, and electric current and voltage is unstable, and, finally still can distinguish to some extent with our voltage of demand even added the voltage of its generation of pressurizer.For article such as batteries of mobile phone, this unstable, nonadjustable voltage seriously influences its useful life, can not satisfy the needs of existing actual conditions.
The utility model content
Problem to be solved in the utility model provides a kind of booster circuit that lower direct voltage can be adjusted to higher direct voltage.
The technical solution of the utility model is as follows: a kind of booster circuit is characterized in that comprising input module, boost module, comparison module, adjustment module and output module;
Described input module comprises input, and described input links to each other with the positive pole of the first electric capacity; Described input links to each other with an end of the second electric capacity, and the other end of described the second electric capacity links to each other with the negative pole of the first electric capacity;
Described boost module comprises the chip that boosts, the a1 pin of the described chip that boosts is in series with the first resistance, the two ends of described the first resistance are parallel with the 3rd electric capacity, and described the first resistance links to each other with an end of the second resistance, and the other end of described the second resistance links to each other with the a3 pin of the chip that boosts; The a8 pin of the described chip that boosts links to each other the other end ground connection of described the 4th electric capacity with the 4th electric capacity one end; The a8 pin of the described chip that boosts links to each other with an end of the 3rd resistance, and the other end of described the 3rd resistance links to each other with the a4 pin of the chip that boosts; Also comprise the 5th electric capacity in the described boost module, an end of described the 5th electric capacity links to each other other end ground connection with the a4 pin of the chip that boosts; The a5 pin ground connection of the described chip that boosts; The a7 pin of chip of boosting links to each other with the emitter of the first triode, and the emitter of described the first triode links to each other with an end of the 6th electric capacity, the other end ground connection of described the 6th electric capacity; Also comprise the first voltage stabilizing didoe and the 4th resistance in the described boost module, the negative pole of described the first voltage stabilizing didoe links to each other with the base stage of the first triode, the plus earth of described the first voltage stabilizing didoe, one end of described the 4th resistance links to each other with the base stage of the first triode, and the other end links to each other with the input of input module; Also comprise the second triode, the 5th resistance, the 6th resistance and the second triode in the described boost module; Described the second triode is the triode that field effect transistor and voltage stabilizing didoe are composited; One end of described the 5th resistance links to each other with grid in the second triode, and the other end links to each other with the a6 pin of the chip that boosts; One end of described the 6th resistance links to each other other end ground connection with the source electrode of the second triode; One end of described the first inductance links to each other with the collector electrode of the first triode, and the other end links to each other with the drain electrode of the second triode;
Described comparison module comprises the first diode, the second inductance, the 7th electric capacity, the 8th electric capacity and the 7th resistance; Described the 7th electric capacity connects with the 8th Capacitance parallel connection, the minus earth behind the 7th electric capacity and the 8th Capacitance parallel connection, and positive pole links to each other with the positive pole of the first diode; The positive pole of described the first diode links to each other with the drain electrode of the second triode; The two ends of described the second inductance link to each other with the 7th resistance with the negative pole of the first diode respectively;
Described adjustment module comprises driving switch, the 8th resistance, the 9th resistance and the tenth resistance; Described the 8th resistance, the 9th resistance and the tenth resistance are connected successively, an end ground connection of described the tenth resistance, and an end of described the 8th resistance links to each other with the 7th resistance; Described driving switch is connected in parallel on the 9th resistance two ends; Described driving switch links to each other with the a2 pin of the chip that boosts;
Described output module comprises output and the 9th electric capacity; The positive pole of described the 9th electric capacity is connected with the second inductance, and the negative pole of described the 9th electric capacity links to each other with output.
Further, described the first electric capacity is the electric capacity with polarity.
Further, the minus earth of described the first electric capacity.
Further, the described chip that boosts is UC3845.
Further, described the first triode is NPN type triode.
Further, described the second triode is the triode that a N raceway groove insulated gate enhancement mode field effect transistor and voltage stabilizing didoe are composited, the positive pole of described voltage stabilizing didoe links to each other with the source electrode of field effect transistor, and the negative pole of described voltage stabilizing didoe links to each other with the drain electrode of field effect transistor.
Further, described the 7th electric capacity and the 8th electric capacity are the electric capacity with polarity.
Further, described the 7th resistance is adjustable resistance.
Further, described the 9th resistance is adjustable resistance.
Further, described driving switch is provided with a plurality of adjustable switch gears.
Further, described the 9th electric capacity is the electric capacity with polarity.
Further, described the first diode is two-way pipe MBR2045.
The beneficial effects of the utility model are to pass through booster circuit; realized unsettled direct voltage is converted to the adjustable stable DC voltage of size; having made things convenient for people's use, especially is to have made things convenient for out of doors to use in the unsettled environment of the inferior power source of environment, has protected electrical appliance.
Description of drawings
Fig. 1 is circuit diagram of the present utility model.
Wherein: 1, input module, 2, boost module,
3, comparison module, 4, adjustment module,
5, output module, 6, input,
7, output, 8, the chip that boosts,
R1, the first resistance, R2, the second resistance,
R3, the 3rd resistance, R4, the 4th resistance,
R5, the 5th resistance, R6, the 6th resistance,
R7, the 7th resistance, R8, the 8th resistance,
R9, the 9th resistance, R10, the tenth resistance,
C1, the first electric capacity, C2, the second electric capacity,
C3, the 3rd electric capacity, C4, the 4th electric capacity,
C5, the 5th electric capacity, C6, the 6th electric capacity,
C7, the 7th electric capacity, C8, the 8th electric capacity,
C9, the 9th electric capacity, L1, the first inductance,
L2, the second inductance, Q1, the first triode,
Q2, the second triode, D1, the first diode,
D2, the first voltage stabilizing didoe, S1, driving switch.
Embodiment
Below in conjunction with accompanying drawing embodiment of the present utility model is made brief description.
A kind of booster circuit as shown in Figure 1, comprises input module 1, boost module 2, comparison module 3, adjustment module 4 and output module 5.
Described input module 1 comprises input 6, and described input 6 links to each other with the positive pole of the first capacitor C 1.Described input 6 links to each other with an end of the second capacitor C 2, and the other end of described the second capacitor C 2 links to each other with the negative pole of the first capacitor C 1, and described the first capacitor C 1 is the electric capacity with polarity, the minus earth of described the first capacitor C 1.
Described boost module 2 comprises the chip 8 that boosts, and the described chip 8 that boosts is UC3845.The a1 pin of the described chip 8 that boosts is in series with the first resistance R 1, and the two ends of described the first resistance R 1 are parallel with the 3rd capacitor C 3, and described the first resistance R 1 links to each other with an end of the second resistance R 2, and the other end of described the second resistance R 2 links to each other with the a3 pin of the chip 8 that boosts.The a8 pin of the described chip 8 that boosts links to each other the other end ground connection of described the 4th capacitor C 4 with the 4th capacitor C 4 one ends.The a8 pin of the described chip 8 that boosts links to each other with an end of the 3rd resistance R 3, and the other end of described the 3rd resistance R 3 links to each other with the a4 pin of the chip 8 that boosts.Also comprise the 5th capacitor C 5 in the described boost module 2, an end of described the 5th capacitor C 5 links to each other other end ground connection with the a4 pin of the chip 8 that boosts.The a5 pin ground connection of the described chip 8 that boosts; The a7 pin of chip 8 of boosting links to each other with the emitter of the first triode Q1, and described the first triode Q1 is NPN type triode, and the emitter of described the first triode Q1 links to each other with an end of the 6th capacitor C 6, the other end ground connection of described the 6th capacitor C 6.Also comprise the first voltage stabilizing didoe D2 and the 4th resistance R 4 in the described boost module 2, the negative pole of described the first voltage stabilizing didoe D2 links to each other with the base stage of the first triode Q1, the plus earth of described the first voltage stabilizing didoe D2, one end of described the 4th resistance R 4 links to each other with the base stage of the first triode Q1, and the other end links to each other with the input 6 of input module 1.Also comprise the second triode Q2, the 5th resistance R 5, the 6th resistance R 6 and the second triode Q2 in the described boost module 2.Described the second triode Q2 is the triode that a N raceway groove insulated gate enhancement mode field effect transistor and voltage stabilizing didoe are composited, and the positive pole of described voltage stabilizing didoe links to each other with the source electrode of field effect transistor, and the negative pole of described voltage stabilizing didoe links to each other with the drain electrode of field effect transistor.Described the second triode Q2 is the triode that field effect transistor and voltage stabilizing didoe are composited.One end of described the 5th resistance R 5 links to each other with grid among the second triode Q2, and the other end links to each other with the a6 pin of the chip 8 that boosts.One end of described the 6th resistance R 6 links to each other other end ground connection with the source electrode of the second triode Q2.One end of described the first inductance L 1 links to each other with the collector electrode of the first triode Q1, and the other end links to each other with the drain electrode of the second triode Q2.
Described comparison module 3 comprises the first diode D1, the second inductance L 2, the 7th capacitor C 7, the 8th capacitor C 8 and the 7th resistance R 7, and described the 7th capacitor C 7 and the 8th capacitor C 8 are the electric capacity with polarity, and described the 7th resistance R 7 is adjustable resistance.Described the 7th capacitor C 7 and the 8th capacitor C 8 are connected in parallel, the minus earth after the 7th capacitor C 7 and 8 parallel connections of the 8th capacitor C, and positive pole links to each other with the positive pole of the first diode D1.The positive pole of described the first diode D1 links to each other with the drain electrode of the second triode Q2.The two ends of described the second inductance L 2 link to each other with the 7th resistance R 7 with the negative pole of the first diode D1 respectively, and described the first diode D1 is two-way pipe MBR2045.
Described adjustment module 4 comprises driving switch S1, the 8th resistance R 8, the 9th resistance R 9 and the tenth resistance R 10, and described the 9th resistance R 9 is adjustable resistance, and described driving switch S1 is provided with a plurality of adjustable switch gears.Described the 8th resistance R 8, the 9th resistance R and the tenth resistance R 10 are connected successively, an end ground connection of described the tenth resistance R 10, and an end of described the 8th resistance R 8 links to each other with the 7th resistance R 7, and described driving switch S1 is connected in parallel on the 9th resistance R 9 two ends.Described driving switch S1 links to each other with the a2 pin of the chip 8 that boosts.
Described output module 5 comprises output 7 and the 9th capacitor C 9, and described the 9th capacitor C 9 is the electric capacity with polarity.The positive pole of described the 9th capacitor C 9 is connected with the second inductance L 2, and the negative pole of described the 9th capacitor C 9 links to each other with output 7.
Working method: it is that 8.5 volts-12 volts direct voltage boosts to 18 volts to 28 volts that booster circuit is realized scope, exports to charge in batteries or uses electric loading.Exporting 18 volts to 28 volts selection controls by driving switch S1.The boost model of chip 8 of employing is UC3845, and boosting is up to 28 volts of maximum current 2A.When extraneous can energy source a little less than the time, input 6 output voltages are lower, input 6 output voltages and by UC3845 boost module 2 boost by the two-way pipe MBR2045 of excessive power relatively after the high output of voltage charge to storage battery or with electric loading.Come 18 volts to 28 volts of choice for use the 9th resistance R 9 control output booster voltages by driving switch S1 break-make, by output 7 outputs.
More than an embodiment of the present utility model is had been described in detail, but described content only is preferred embodiment of the present utility model, can not be considered to be used to limiting practical range of the present utility model.All equalizations of doing according to the utility model application range change and improve etc., all should still belong within the patent covering scope of the present utility model.

Claims (10)

1. a booster circuit is characterized in that comprising input module, boost module, comparison module, adjustment module and output module;
Described input module comprises input, and described input links to each other with the positive pole of the first electric capacity; Described input links to each other with an end of the second electric capacity, and the other end of described the second electric capacity links to each other with the negative pole of the first electric capacity;
Described boost module comprises the chip that boosts, the a1 pin of the described chip that boosts is in series with the first resistance, the two ends of described the first resistance are parallel with the 3rd electric capacity, and described the first resistance links to each other with an end of the second resistance, and the other end of described the second resistance links to each other with the a3 pin of the chip that boosts; The a8 pin of the described chip that boosts links to each other the other end ground connection of described the 4th electric capacity with the 4th electric capacity one end; The a8 pin of the described chip that boosts links to each other with an end of the 3rd resistance, and the other end of described the 3rd resistance links to each other with the a4 pin of the chip that boosts; Also comprise the 5th electric capacity in the described boost module, an end of described the 5th electric capacity links to each other other end ground connection with the a4 pin of the chip that boosts; The a5 pin ground connection of the described chip that boosts; The a7 pin of chip of boosting links to each other with the emitter of the first triode, and the emitter of described the first triode links to each other with an end of the 6th electric capacity, the other end ground connection of described the 6th electric capacity; Also comprise the first voltage stabilizing didoe and the 4th resistance in the described boost module, the negative pole of described the first voltage stabilizing didoe links to each other with the base stage of the first triode, the plus earth of described the first voltage stabilizing didoe, one end of described the 4th resistance links to each other with the base stage of the first triode, and the other end links to each other with the input of input module; Also comprise the second triode, the 5th resistance, the 6th resistance and the second triode in the described boost module; Described the second triode is the triode that field effect transistor and voltage stabilizing didoe are composited; One end of described the 5th resistance links to each other with grid in the second triode, and the other end links to each other with the a6 pin of the chip that boosts; One end of described the 6th resistance links to each other other end ground connection with the source electrode of the second triode; One end of described the first inductance links to each other with the collector electrode of the first triode, and the other end links to each other with the drain electrode of the second triode;
Described comparison module comprises the first diode, the second inductance, the 7th electric capacity, the 8th electric capacity and the 7th resistance; Described the 7th electric capacity connects with the 8th Capacitance parallel connection, the minus earth behind the 7th electric capacity and the 8th Capacitance parallel connection, and positive pole links to each other with the positive pole of the first diode; The positive pole of described the first diode links to each other with the drain electrode of the second triode; The two ends of described the second inductance link to each other with the 7th resistance with the negative pole of the first diode respectively;
Described adjustment module comprises driving switch, the 8th resistance, the 9th resistance and the tenth resistance; Described the 8th resistance, the 9th resistance and the tenth resistance are connected successively, an end ground connection of described the tenth resistance, and an end of described the 8th resistance links to each other with the 7th resistance; Described driving switch is connected in parallel on the 9th resistance two ends; Described driving switch links to each other with the a2 pin of the chip that boosts;
Described output module comprises output and the 9th electric capacity; The positive pole of described the 9th electric capacity is connected with the second inductance, and the negative pole of described the 9th electric capacity links to each other with output.
2. described a kind of booster circuit according to claim 1 is characterized in that described the first electric capacity is the electric capacity with polarity.
3. described a kind of booster circuit according to claim 1 is characterized in that the minus earth of described the first electric capacity.
4. described a kind of booster circuit according to claim 1 is characterized in that the described chip that boosts is UC3845.
5. described a kind of booster circuit according to claim 1 is characterized in that described the first triode is NPN type triode.
6. described a kind of booster circuit according to claim 1, it is characterized in that described the second triode is the triode that a N raceway groove insulated gate enhancement mode field effect transistor and voltage stabilizing didoe are composited, the positive pole of described voltage stabilizing didoe links to each other with the source electrode of field effect transistor, and the negative pole of described voltage stabilizing didoe links to each other with the drain electrode of field effect transistor.
7. described a kind of booster circuit according to claim 1 is characterized in that described the 7th electric capacity and the 8th electric capacity are the electric capacity with polarity.
8. described a kind of booster circuit according to claim 1 is characterized in that described the 7th resistance is adjustable resistance.
9. described a kind of booster circuit according to claim 1 is characterized in that described the 9th resistance is adjustable resistance.
10. described a kind of booster circuit according to claim 1 is characterized in that described driving switch is provided with a plurality of adjustable switch gears.
CN 201220471233 2012-09-14 2012-09-14 Boost circuit Expired - Fee Related CN202872639U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220471233 CN202872639U (en) 2012-09-14 2012-09-14 Boost circuit

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105932866A (en) * 2016-05-16 2016-09-07 深圳天珑无线科技有限公司 Voltage-stabilizing circuit and voltage-stabilizing method thereof
CN113450622A (en) * 2021-07-06 2021-09-28 中国空气动力研究与发展中心超高速空气动力研究所 High-temperature high-speed model launching device and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105932866A (en) * 2016-05-16 2016-09-07 深圳天珑无线科技有限公司 Voltage-stabilizing circuit and voltage-stabilizing method thereof
CN113450622A (en) * 2021-07-06 2021-09-28 中国空气动力研究与发展中心超高速空气动力研究所 High-temperature high-speed model launching device and method
CN113450622B (en) * 2021-07-06 2022-08-26 中国空气动力研究与发展中心超高速空气动力研究所 High-temperature high-speed model launching device and method

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130410

Termination date: 20130914