CN202610397U - Air inlet pipe for diffusing process gas generated in production of crystalline silicon solar cells - Google Patents
Air inlet pipe for diffusing process gas generated in production of crystalline silicon solar cells Download PDFInfo
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- CN202610397U CN202610397U CN 201220279973 CN201220279973U CN202610397U CN 202610397 U CN202610397 U CN 202610397U CN 201220279973 CN201220279973 CN 201220279973 CN 201220279973 U CN201220279973 U CN 201220279973U CN 202610397 U CN202610397 U CN 202610397U
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- inlet pipe
- pipe body
- air inlet
- process gas
- silicon solar
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Abstract
The utility model discloses an air inlet pipe for diffusing process gas generated in production of crystalline silicon solar cells. The air inlet pipe comprises an air inlet pipe body (1), and a covering cup (2) which is sleeved on the inlet air pipe body (1); one end of the air inlet pipe body (1) is provided with an opening; the other end of the air inlet pipe body (1) is sealed; an air outlet hole (3) is formed in the sealed end of the air inlet pipe body (1); and filled layers (4) are arranged on the outer part of the inlet air pipe body (1). By the structure, the uniformity of square resistance is improved; and meanwhile, the service life of the air inlet pipe is prolonged, and the using cost is reduced.
Description
Technical field
The utility model relates to crystal silicon solar energy battery process for processing field, specifically is a kind of inlet pipe that crystal silicon solar energy battery is produced the process gas diffusion that is used for.
Background technology
In the crystal silicon solar energy battery production technique, what at present institute generally adopted is POCL3 liquid source diffusion making PN junction, and its principle is as shown in Figure 1.In diffusion process, process gas gets in the stove from the stove tail through a cup, extracts out from fire door through offgas duct then.Utilize this method to spread, technology is simple, and cost is lower, thereby becomes the main method that present crystal silicon solar energy battery is manufactured PN junction.But because the close between the silicon chip, this kind method makes the process gas enter into the silicon chip central zone obviously be less than the silicon chip edge zone, makes the square resistance of silicon chip central zone apparently higher than silicon chip edge, thereby makes the homogeneity variation.In order to obtain preferably homogeneity in the sheet, the method that adopts usually is the certain distance that staggers of the draw-in groove with underbeam on the quartz boat, makes silicon chip that the inclination of a deflection stove tail direction arranged in stove.Like this, the process gas of coming in from stove tail direction just enters into the silicon chip central zone more easily, thereby homogeneity is improved.
But owing to lower from the process gas temperature of stove tail entering, process gas at first can sink in getting into stove afterwards, gets into the silicon chip central zone through heating the dispersion of rising again afterwards, and the homogeneity that makes the stove tail reach middle territory, tail region like this receives certain influence.
The utility model content
The utility model provides a kind of inlet pipe that crystal silicon solar energy battery is produced the process gas diffusion that is used for; The mode that has solved in the stove of process gas entering in the past causes the process gas of silicon chip central zone obviously to be less than the silicon chip edge zone easily; Make the square resistance of silicon chip central zone apparently higher than silicon chip edge, thereby make the problem of homogeneity variation.
The utility model is that the technical solution problem mainly realizes through following technical scheme: be used for the inlet pipe that crystal silicon solar energy battery is produced the process gas diffusion; Comprise the inlet pipe body and be socketed in the cup on the inlet pipe body; One end of said inlet pipe body is an opening; The sealing of the other end of inlet pipe body, and the sealed end of inlet pipe body is provided with a production well, and the outside of inlet pipe body is provided with packing layer.
The distance of the opening of said cup and inlet pipe body be the inlet pipe body length 1/5 ~ 1/4.Through cup inlet pipe is fixed on the boiler tube inlet end.
The thickness of said packing layer is 1.5 ~ 3 times of thickness of pipe of inlet pipe body.Packing layer mainly is in order to reduce the slit between inlet pipe and the boiler tube inlet end, to avoid corrosive deposit on inlet pipe, to pile up.
Said cup is socketed on the packing layer.
The utility model compared with prior art has the following advantages and beneficial effect:
(1) the inlet pipe body of the utility model adopts the test tube structure, i.e. an end opening, and end sealing is provided with a production well at sealed end, and is directly up mobile after process gas gets in the stove like this, improved the homogeneity question of square resistance well.
(2) the utility model is provided with packing layer outside the inlet pipe body; Reduced the slit between inlet pipe and the fire door like this; The corrosives of having avoided producing in the stove is deposited on the inlet pipe, causes inlet pipe to be corroded and wears, and causes tube brakes at last; Thereby prolonged the work-ing life of inlet pipe, reduced use cost.
Description of drawings
Fig. 1 is process gas diffusion principle figure during traditional crystal-silicon solar cell is produced;
Fig. 2 is the structural representation of the utility model;
Structural representation when Fig. 3 uses on the boiler tube inlet end for the utility model is installed in.
Pairing Reference numeral is in the accompanying drawing: 1, inlet pipe body, 2, cup, 3, production well, 4, packing layer.
Embodiment
Below in conjunction with embodiment the utility model is done further to specify, but the embodiment of the utility model is not limited thereto.
Embodiment:
As shown in Figure 2; The utility model comprises inlet pipe body 1 and is socketed in the cup 2 on the inlet pipe body 1; One end of inlet pipe body 1 is an opening; The sealing of the other end of inlet pipe body 1, and the sealed end of inlet pipe body 1 is provided with a production well 3, and the outside of inlet pipe body 1 is provided with packing layer 4.
The distance of the cup 2 of present embodiment and the opening of inlet pipe body 1 be inlet pipe body 1 length 1/5 ~ 1/4.
The thickness of the packing layer 4 of present embodiment is 1.5 ~ 3 times of thickness of pipe of inlet pipe body 1.
The cup 2 of present embodiment is socketed on the packing layer 4.
The principle of work of the utility model is: as shown in Figure 3; The utility model is installed on the boiler tube inlet end; Packing layer 4 makes realizes seamless the contact basically between inlet pipe and the fire door, and process gas gets into through the opening of inlet pipe body 1, flows out from production well 3 then; Process gas travels up to silicon chip, realizes diffusion.
As stated, then can realize the utility model well.
Claims (4)
1. be used for crystal silicon solar energy battery and produce the inlet pipe of process gas diffusion; It is characterized in that: comprise inlet pipe body (1) and be socketed in the cup (2) on the inlet pipe body (1); One end of said inlet pipe body (1) is an opening; The sealing of the other end of inlet pipe body (1), and the sealed end of inlet pipe body (1) is provided with a production well (3), and the outside of inlet pipe body (1) is provided with packing layer (4).
2. according to claim 1ly be used for the inlet pipe that crystal silicon solar energy battery is produced the process gas diffusion, it is characterized in that: the distance of said cup (2) and the opening of inlet pipe body (1) be inlet pipe body (1) length 1/5 ~ 1/4.
3. according to claim 1ly be used for the inlet pipe that crystal silicon solar energy battery is produced the process gas diffusion, it is characterized in that: the thickness of said packing layer (4) is 1.5 ~ 3 times of thickness of pipe of inlet pipe body (1).
4. the crystal silicon solar energy battery that is used for according to claim 1 is produced the inlet pipe that process gas spreads, and it is characterized in that: said cup (2) is socketed on the packing layer (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220279973 CN202610397U (en) | 2012-06-14 | 2012-06-14 | Air inlet pipe for diffusing process gas generated in production of crystalline silicon solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220279973 CN202610397U (en) | 2012-06-14 | 2012-06-14 | Air inlet pipe for diffusing process gas generated in production of crystalline silicon solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202610397U true CN202610397U (en) | 2012-12-19 |
Family
ID=47344109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220279973 Expired - Fee Related CN202610397U (en) | 2012-06-14 | 2012-06-14 | Air inlet pipe for diffusing process gas generated in production of crystalline silicon solar cells |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202610397U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103409803A (en) * | 2013-08-22 | 2013-11-27 | 天威新能源控股有限公司 | Flow homogenizing plate used for crystalline silicon diffusion and crystalline silicon diffusion technology furnace comprising same |
-
2012
- 2012-06-14 CN CN 201220279973 patent/CN202610397U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103409803A (en) * | 2013-08-22 | 2013-11-27 | 天威新能源控股有限公司 | Flow homogenizing plate used for crystalline silicon diffusion and crystalline silicon diffusion technology furnace comprising same |
| CN103409803B (en) * | 2013-08-22 | 2016-12-28 | 天威新能源控股有限公司 | Even flow plate and crystalline silicon diffusion technique stove thereof for crystalline silicon diffusion |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121219 Termination date: 20160614 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |