CN202423368U - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

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Publication number
CN202423368U
CN202423368U CN2012200160810U CN201220016081U CN202423368U CN 202423368 U CN202423368 U CN 202423368U CN 2012200160810 U CN2012200160810 U CN 2012200160810U CN 201220016081 U CN201220016081 U CN 201220016081U CN 202423368 U CN202423368 U CN 202423368U
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CN
China
Prior art keywords
light
layer
utility
model
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2012200160810U
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Chinese (zh)
Inventor
林朝晖
王树林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quanzhou City Botai Semiconductor Technology Co Ltd
Original Assignee
Quanzhou City Botai Semiconductor Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Quanzhou City Botai Semiconductor Technology Co Ltd filed Critical Quanzhou City Botai Semiconductor Technology Co Ltd
Priority to CN2012200160810U priority Critical patent/CN202423368U/en
Application granted granted Critical
Publication of CN202423368U publication Critical patent/CN202423368U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses a semiconductor light-emitting device, which is in a sandwich interlayer structure, wherein a middle part of the interlayer structure is provided with a light-emitting body; and a transparent electricity-conducting and heat-conducting layer which is positioned on the surface of the light-emitting body, and a glass layer which is positioned on the surface of the transparent electricity-conducting and heat-conducting layer are respectively and sequentially arranged at the two sides of the light-emitting body. By adopting the semiconductor light-emitting device disclosed by the utility model, a light-emitting diode (LED) device can be vertically placed and can emit light on both sides, so the light-emitting efficiency is improved and the heat dissipation performance of the device cannot be affected.

Description

Light emitting semiconductor device
Technical field
The utility model relates to semiconductor lighting device technical field, is specifically related to a kind of light emitting semiconductor device.
Background technology
Light emitting semiconductor device, for example light-emitting diode is called for short LED, is by the III-IV compounds of group, processes like GaAs (GaAs), GaP (gallium phosphide), GaAsP semiconductors such as (gallium arsenide phosphides), and its core is a PN junction.By the diode that the gallium (Ga) and the compound of arsenic (AS), phosphorus (P) are processed, its operation principle is the electroluminescence principle of PN junction.After the diode electrode two ends add certain forward voltage; To there be a large amount of electronics to inject in the diode; High-energy electron on the PN junction conduction band and the hole on the valence band take place compound, and the form of unnecessary energy with light emitted, and the used material of the color of light and diode is relevant.Characteristics such as light-emitting diode (LED) is low in energy consumption with it as light source, life-span length, reliability height; Many fields have in daily life obtained general approval; In electronic product, be used widely, for example in circuit and the instrument as indicator light, display backlight etc.
With based on semiconductor material with wide forbidden band nitrogenize sow (GaN) and indium nitrogenize to sow the light-emitting diode of (InGaN) be that the short-wave long light-emitting diodes such as near ultraviolet ray, blue-green and blueness of representative were used widely for the later stage in nineteen ninety, on basic research and commercial application, obtained very much progress.At present; The typical structure of the GaN based light-emitting diode of widespread usage is as shown in Figure 1; The structure of GaN based light-emitting diode comprises Sapphire Substrate 10; At the n type GaN layer 201 of substrate 10 surface by utilizing MOCVD process deposits, the luminescence unit that the AlGaN layer 207 that AlGaN layer 203, InGaN luminescent layer 205 (comprising single quantum hydrazine or the sub-hydrazine of volume) and the p type that is mixed by the n type mixes is formed, and p type GaN layer 209.Comprise transparent conductive oxide (TCO) contact layer 211 that utilizes LPCVD technology or magnetron sputtering technique deposition and p electrode 213 and the n electrode 215 that forms through technologies such as deposition, mask, photoetching and etchings in addition.
The GaN based light-emitting diode of said structure, certain light-emitting diode that also comprises other type, its chip structure all adopts planar structure, and luminous form is unidirection luminous, and the taking-up of light receives the restriction of material and manufacture process.Along with LED develops to the semiconductor lighting direction, the encapsulation of LED also need have higher luminous efficiency except satisfying bigger dissipation power, the better heat radiating effect.
The utility model content
The utility model provides a kind of light emitting semiconductor device, can make vertical placement of LED device and double-side, improves luminous efficiency, and does not influence the heat dispersion of device.
The utility model provides a kind of light emitting semiconductor device; Said device is a sandwich sandwich; The middle part of said sandwich is a luminous element; In the both sides of said luminous element, comprise the electrically conducting transparent heat-conducting layer that is positioned at said emitter surface respectively successively and be positioned at the surperficial glassy layer of said electrically conducting transparent heat-conducting layer.
Said electrically conducting transparent heat-conducting layer comprises glass electrically and thermally conductive adhesive, graphite conductive adhesive, electric conduction of carbon fiber heat-conducting glue or Graphene.
Said glassy layer is a quartz glass layer.
Said luminous element is a gallium nitride based light emitting diode.
The quantity of said luminous element be one or, together a plurality of of serial or parallel connection.
Said electrically conducting transparent heat-conducting layer comprises one deck at least.
Description of drawings
The more specifically explanation of the preferred embodiment through the utility model shown in the accompanying drawing, above-mentioned and other purpose, characteristic and the advantage of the utility model will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating the purport of the utility model.
Fig. 1 is the structural representation of GaN based light-emitting diode;
Fig. 2 to Fig. 8 is the device architecture sketch map of explanation the utility model manufacture process;
Fig. 9 is the structural representation of the utility model light emitting semiconductor device.
Said diagrammatic sketch is illustrative, and nonrestrictive, can not excessively limit the protection range of the utility model at this.
Embodiment
For above-mentioned purpose, the feature and advantage that make the utility model can be more obviously understandable, the embodiment of the utility model is done detailed explanation below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that make much of the utility model.But the utility model can be implemented much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of the utility model intension.Therefore the utility model does not receive the restriction of following disclosed specific embodiment.
Fig. 9 is the structural representation of the utility model light emitting semiconductor device.As shown in Figure 9; The luminescent device of the utility model is the sandwich of sandwich style, and the middle part of said sandwich is a luminous element 200, in the both sides of said luminous element 200; Comprise the electrically conducting transparent heat-conducting layer 411 and 421 that is positioned at said luminous element 200 surfaces respectively successively; And the glassy layer that is positioned at said electrically conducting transparent heat-conducting layer surface, promptly be positioned at the glassy layer 410 on electrically conducting transparent heat-conducting layer 411 surfaces and be positioned at the glassy layer 420 on electrically conducting transparent heat-conducting layer 421 surfaces.
Wherein, said electrically conducting transparent heat-conducting layer 411 and 421 can be glass electrically and thermally conductive adhesive, graphite conductive adhesive, electric conduction of carbon fiber heat-conducting glue or Graphene.Glassy layer 410 and 420 is a quartz glass layer.Luminous element 200 is preferably the gallium nitride based light emitting diode of vertical stratification, and p type electrode and n type electrode are positioned at the left and right sides.Conductive heat conducting material layer 411 and 421 forms good ohmic with the p type electrode of gallium nitride based light emitting diode with n type electrode and contacts, and electrode is drawn, and constitutes the packing forms of vertical straight cutting.The quantity of luminous element 200 can be one, also can be together a plurality of of serial or parallel connection.Said electrically conducting transparent heat-conducting layer 411 and 421 itself can be one deck, also can be the composite bed of multilayer build-up.
This encapsulating structure adopts the conductive and heat-conductive transparent material that luminous element is clamped in central mode, can reach the omnibearing luminous effect of two-sided bright dipping, has reduced interface and the repeatedly loss of reflection of light in the designs process.Because this structure adopts the conductive and heat-conductive transparent material, forming effectively luminous gallium nitride surface bright dipping zone increases; Because the increase of heat conduction and transmitance can reduce junction temperature, effectively increases light extraction efficiency.In addition, this structure more be prone to form the series connection and the parallel connection of multicore sheet, adopts direct insertionly, reduces the cost that encapsulates.
Fig. 2 to Fig. 8 is the device architecture sketch map of explanation the utility model manufacture process.As shown in the figure, the manufacturing approach of the luminescent device of the utility model at first provides first substrate 100, forms luminous elements 200 on said first substrate 100 surfaces, and is as shown in Figure 2; At said luminous element 200 surface bonds second substrate 300, as shown in Figure 3 then; Utilize laser lift-off or other stripping technology to remove said first substrate 100, as shown in Figure 4; Carry out the graphics chip making subsequently, after technologies such as side passivation, the alligatoring of N face, the making of N electrode, chip is cut, form single luminous element, as shown in Figure 5; On another surface of said luminous element 200, utilize the method for sticking card or bonding to attach the glassy layer 410 that its surface has electrically conducting transparent heat-conducting layer 411, as shown in Figure 6; Utilize the method for wet etching to remove second substrate 300 then, as shown in Figure 7; Next, attach the glassy layer 420 that its surface has another electrically conducting transparent heat-conducting layer 421 on another surface of luminous element 200, as shown in Figure 8.
Preferred first substrate of the utility model comprises Sapphire Substrate, and luminous element 200 is gallium nitrate based light-emitting diode.Said second substrate 300 can be copper or silicon.
The above only is the preferred embodiment of the utility model, is not the utility model is done any pro forma restriction.Any those of ordinary skill in the art; Do not breaking away under the utility model technical scheme scope situation; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to the utility model technical scheme, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from the utility model technical scheme, all still belongs in the protection range of the utility model technical scheme any simple modification, equivalent variations and modification that above embodiment did according to the technical spirit of the utility model.

Claims (6)

1. light emitting semiconductor device; It is characterized in that: said device is a sandwich sandwich; The middle part of said sandwich is a luminous element; In the both sides of said luminous element, comprise the electrically conducting transparent heat-conducting layer that is positioned at said emitter surface respectively successively and be positioned at the surperficial glassy layer of said electrically conducting transparent heat-conducting layer.
2. luminescent device according to claim 1 is characterized in that: said electrically conducting transparent heat-conducting layer comprises glass electrically and thermally conductive adhesive, graphite conductive adhesive, electric conduction of carbon fiber heat-conducting glue or Graphene.
3. luminescent device according to claim 1 is characterized in that: said glassy layer is a quartz glass layer.
4. luminescent device according to claim 1 is characterized in that: said luminous element is a gallium nitride based light emitting diode.
5. luminescent device according to claim 4 is characterized in that: the quantity of said luminous element be one or, together a plurality of of serial or parallel connection.
6. luminescent device according to claim 1 is characterized in that: said electrically conducting transparent heat-conducting layer comprises one deck at least.
CN2012200160810U 2012-01-16 2012-01-16 Semiconductor light-emitting device Expired - Fee Related CN202423368U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012200160810U CN202423368U (en) 2012-01-16 2012-01-16 Semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012200160810U CN202423368U (en) 2012-01-16 2012-01-16 Semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
CN202423368U true CN202423368U (en) 2012-09-05

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CN2012200160810U Expired - Fee Related CN202423368U (en) 2012-01-16 2012-01-16 Semiconductor light-emitting device

Country Status (1)

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CN (1) CN202423368U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105448902A (en) * 2014-08-25 2016-03-30 中国科学院苏州纳米技术与纳米仿生研究所 LED light-emitting device and manufacture method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105448902A (en) * 2014-08-25 2016-03-30 中国科学院苏州纳米技术与纳米仿生研究所 LED light-emitting device and manufacture method thereof

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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120905

Termination date: 20210116