CN202204836U - 高压试验设备绝缘支架 - Google Patents
高压试验设备绝缘支架 Download PDFInfo
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Abstract
本实用新型公开了一种高压试验设备绝缘支架，它有一个夹套，所述的夹套是由两个半圆套对接而成，在夹套下面沿圆周方向均布连接有斜置的支脚，所述的夹套和支脚均由绝缘材料制成。优点是：结构简单、使用方便，将夹套套在高压试验设备上能够确保高压试验设备立置于地面，可避免高压试验设备因大风或地面不平而倾倒，消除了安全隐患；使用时无需再用绝缘拉绳固定，省工省时。
Description
技术领域
本实用新型特别涉及一种高压试验设备绝缘支架。
背景技术
目前，供电公司工作人员在使用高压试验设备（例如高压直流发生器）试验时，由于高压试验设备底座占地面积小，如遇大风或地面不平都容易倾倒，如在升压过程中倾倒就容易造成人身伤害及设备损坏，存在极大的安全隐患。因此在使用高压试验设备时每次都要用绝缘拉绳将其固定，费工费时。
发明内容
本实用新型要解决的技术问题是要提供一种结构简单、使用方便，能够确保高压试验设备立置于地面，消除安全隐患，省工省时的高压试验设备绝缘支架。
本实用新型涉及的高压试验设备绝缘支架有一个夹套，所述的夹套是由两个半圆套对接而成，在夹套下面沿圆周方向均布连接有斜置的支脚，所述的夹套和支脚均由绝缘材料制成。
上述的高压试验设备绝缘支架，所述的两个半圆套通过内六角螺栓连接。
上述的高压试验设备绝缘支架，所述的支脚为四个且对称设在两个半圆套上。
上述的高压试验设备绝缘支架，在每个半圆套的下表面固接有两组支脚座，所述的支脚上端通过螺栓固定在支脚座上。
本实用新型的优点是：结构简单、使用方便，将夹套套在高压试验设备上能够确保高压试验设备立置于地面，可避免高压试验设备因大风或地面不平而倾倒，消除了安全隐患；使用时无需再用绝缘拉绳固定，省工省时。
附图说明
图1是本实用新型的结构示意图。
图中：1-夹套、101-半圆套、2-支脚、3-支脚座、4-垫片。
具体实施方式
如图所示，该高压试验设备绝缘支架有一个夹套1，所述的夹套1是由两个半圆套101通过两个内六角螺栓对接而成，在夹套1下面沿圆周方向均布连接有斜置的支脚2，所述的支脚2为四个且对称设在两个半圆套101上。在每个半圆套101的下表面固接有两组支脚座3，所述的支脚2上端通过螺栓固定在支脚座3上。在每个支脚2的下端分别固接有直径大于支脚的垫片4，以提高稳定性。该高压试验设备绝缘支架的所有部件均由绝缘材料制成，以提高安全性。
使用时，将两个半圆套101分开并套在立置于地面的高压试验设备上，再将两个半圆套101通过内六角螺栓固接，放置好四个支脚2即可。
Claims (4)
1.一种高压试验设备绝缘支架，其特征是：它有一个夹套，所述的夹套是由两个半圆套对接而成，在夹套下面沿圆周方向均布连接有斜置的支脚，所述的夹套和支脚均由绝缘材料制成。
2.根据权利要求1所述的高压试验设备绝缘支架，其特征是：所述的两个半圆套通过内六角螺栓连接。
3.根据权利要求1所述的高压试验设备绝缘支架，其特征是：所述的支脚为四个且对称设在两个半圆套上。
4.根据权利要求1所述的高压试验设备绝缘支架，其特征是：在每个半圆套的下表面焊接有两组支脚座，所述的支脚上端通过螺栓固定在支脚座上。
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| CN 201120270875 CN202204836U (zh) | 2011-07-28 | 2011-07-28 | 高压试验设备绝缘支架 |
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| CN 201120270875 CN202204836U (zh) | 2011-07-28 | 2011-07-28 | 高压试验设备绝缘支架 |
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Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2757571A1 (en) * | 2013-01-17 | 2014-07-23 | IMS Nanofabrication AG | High-voltage insulation device for charged-particle optical apparatus |
| CN104158384A (zh) * | 2014-08-26 | 2014-11-19 | 国家电网公司 | 一种便携式高压直流发生器绝缘加固装置 |
| US9053906B2 (en) | 2013-07-25 | 2015-06-09 | Ims Nanofabrication Ag | Method for charged-particle multi-beam exposure |
| US9099277B2 (en) | 2013-07-17 | 2015-08-04 | Ims Nanofabrication Ag | Pattern definition device having multiple blanking arrays |
| US9269543B2 (en) | 2014-02-28 | 2016-02-23 | Ims Nanofabrication Ag | Compensation of defective beamlets in a charged-particle multi-beam exposure tool |
| US9373482B2 (en) | 2014-07-10 | 2016-06-21 | Ims Nanofabrication Ag | Customizing a particle-beam writer using a convolution kernel |
| US9443699B2 (en) | 2014-04-25 | 2016-09-13 | Ims Nanofabrication Ag | Multi-beam tool for cutting patterns |
| US9495499B2 (en) | 2014-05-30 | 2016-11-15 | Ims Nanofabrication Ag | Compensation of dose inhomogeneity using overlapping exposure spots |
| US9568907B2 (en) | 2014-09-05 | 2017-02-14 | Ims Nanofabrication Ag | Correction of short-range dislocations in a multi-beam writer |
| US9653263B2 (en) | 2015-03-17 | 2017-05-16 | Ims Nanofabrication Ag | Multi-beam writing of pattern areas of relaxed critical dimension |
| US9799487B2 (en) | 2015-03-18 | 2017-10-24 | Ims Nanofabrication Ag | Bi-directional double-pass multi-beam writing |
| US10325756B2 (en) | 2016-06-13 | 2019-06-18 | Ims Nanofabrication Gmbh | Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer |
| US10325757B2 (en) | 2017-01-27 | 2019-06-18 | Ims Nanofabrication Gmbh | Advanced dose-level quantization of multibeam-writers |
| US10410831B2 (en) | 2015-05-12 | 2019-09-10 | Ims Nanofabrication Gmbh | Multi-beam writing using inclined exposure stripes |
| US10522329B2 (en) | 2017-08-25 | 2019-12-31 | Ims Nanofabrication Gmbh | Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus |
| US10651010B2 (en) | 2018-01-09 | 2020-05-12 | Ims Nanofabrication Gmbh | Non-linear dose- and blur-dependent edge placement correction |
| US10840054B2 (en) | 2018-01-30 | 2020-11-17 | Ims Nanofabrication Gmbh | Charged-particle source and method for cleaning a charged-particle source using back-sputtering |
| US11099482B2 (en) | 2019-05-03 | 2021-08-24 | Ims Nanofabrication Gmbh | Adapting the duration of exposure slots in multi-beam writers |
| US11569064B2 (en) | 2017-09-18 | 2023-01-31 | Ims Nanofabrication Gmbh | Method for irradiating a target using restricted placement grids |
| US11735391B2 (en) | 2020-04-24 | 2023-08-22 | Ims Nanofabrication Gmbh | Charged-particle source |
-
2011
- 2011-07-28 CN CN 201120270875 patent/CN202204836U/zh not_active Expired - Fee Related
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2757571A1 (en) * | 2013-01-17 | 2014-07-23 | IMS Nanofabrication AG | High-voltage insulation device for charged-particle optical apparatus |
| JP2014137998A (ja) * | 2013-01-17 | 2014-07-28 | Ims Nanofabrication Ag | 荷電粒子光学機器用高電圧絶縁装置 |
| US9093201B2 (en) | 2013-01-17 | 2015-07-28 | Ims Nanofabrication Ag | High-voltage insulation device for charged-particle optical apparatus |
| US9099277B2 (en) | 2013-07-17 | 2015-08-04 | Ims Nanofabrication Ag | Pattern definition device having multiple blanking arrays |
| US9053906B2 (en) | 2013-07-25 | 2015-06-09 | Ims Nanofabrication Ag | Method for charged-particle multi-beam exposure |
| US9269543B2 (en) | 2014-02-28 | 2016-02-23 | Ims Nanofabrication Ag | Compensation of defective beamlets in a charged-particle multi-beam exposure tool |
| US9443699B2 (en) | 2014-04-25 | 2016-09-13 | Ims Nanofabrication Ag | Multi-beam tool for cutting patterns |
| US9495499B2 (en) | 2014-05-30 | 2016-11-15 | Ims Nanofabrication Ag | Compensation of dose inhomogeneity using overlapping exposure spots |
| US9373482B2 (en) | 2014-07-10 | 2016-06-21 | Ims Nanofabrication Ag | Customizing a particle-beam writer using a convolution kernel |
| US9520268B2 (en) | 2014-07-10 | 2016-12-13 | Ims Nanofabrication Ag | Compensation of imaging deviations in a particle-beam writer using a convolution kernel |
| CN104158384A (zh) * | 2014-08-26 | 2014-11-19 | 国家电网公司 | 一种便携式高压直流发生器绝缘加固装置 |
| CN104158384B (zh) * | 2014-08-26 | 2016-06-01 | 国网黑龙江省电力有限公司牡丹江供电公司 | 一种便携式高压直流发生器绝缘加固装置 |
| US9568907B2 (en) | 2014-09-05 | 2017-02-14 | Ims Nanofabrication Ag | Correction of short-range dislocations in a multi-beam writer |
| US9653263B2 (en) | 2015-03-17 | 2017-05-16 | Ims Nanofabrication Ag | Multi-beam writing of pattern areas of relaxed critical dimension |
| US9799487B2 (en) | 2015-03-18 | 2017-10-24 | Ims Nanofabrication Ag | Bi-directional double-pass multi-beam writing |
| US10410831B2 (en) | 2015-05-12 | 2019-09-10 | Ims Nanofabrication Gmbh | Multi-beam writing using inclined exposure stripes |
| US10325756B2 (en) | 2016-06-13 | 2019-06-18 | Ims Nanofabrication Gmbh | Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer |
| US10325757B2 (en) | 2017-01-27 | 2019-06-18 | Ims Nanofabrication Gmbh | Advanced dose-level quantization of multibeam-writers |
| US10522329B2 (en) | 2017-08-25 | 2019-12-31 | Ims Nanofabrication Gmbh | Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus |
| US11569064B2 (en) | 2017-09-18 | 2023-01-31 | Ims Nanofabrication Gmbh | Method for irradiating a target using restricted placement grids |
| US10651010B2 (en) | 2018-01-09 | 2020-05-12 | Ims Nanofabrication Gmbh | Non-linear dose- and blur-dependent edge placement correction |
| US10840054B2 (en) | 2018-01-30 | 2020-11-17 | Ims Nanofabrication Gmbh | Charged-particle source and method for cleaning a charged-particle source using back-sputtering |
| US11099482B2 (en) | 2019-05-03 | 2021-08-24 | Ims Nanofabrication Gmbh | Adapting the duration of exposure slots in multi-beam writers |
| US11735391B2 (en) | 2020-04-24 | 2023-08-22 | Ims Nanofabrication Gmbh | Charged-particle source |
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Owner name: STATE ELECTRIC NET CROP. Effective date: 20130122 Owner name: MAINTENANCE BRANCH OF LIAONING ELECTRIC POWER CO., Free format text: FORMER OWNER: LIAONING ELECTRIC POWER CO., LTD. Effective date: 20130122 |
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Effective date of registration: 20130122 Address after: 110000 21 glorious Street, Heping District, Liaoning, Shenyang Patentee after: Maintenance Branch, Liaoning Power Co.,Ltd. Patentee after: State Grid Corporation of China Address before: 121000 Liaoning city of Jinzhou province high tech Zone Dexinlikang Park No. 15 Patentee before: Liaoning Electric Power Company Limited |
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