CN202159116U - Heat resistance quick batch screening device of power semiconductor LED (Light-emitting Diode) - Google Patents
Heat resistance quick batch screening device of power semiconductor LED (Light-emitting Diode) Download PDFInfo
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- CN202159116U CN202159116U CN 201120249012 CN201120249012U CN202159116U CN 202159116 U CN202159116 U CN 202159116U CN 201120249012 CN201120249012 CN 201120249012 CN 201120249012 U CN201120249012 U CN 201120249012U CN 202159116 U CN202159116 U CN 202159116U
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- 239000004065 semiconductors Substances 0.000 title claims abstract description 12
- 239000010410 layers Substances 0.000 claims abstract description 9
- 239000000463 materials Substances 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound data:image/svg+xml;base64,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 data:image/svg+xml;base64,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 [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 17
- 238000007598 dipping method Methods 0.000 claims description 6
- 230000001276 controlling effects Effects 0.000 claims description 3
- 238000000034 methods Methods 0.000 description 4
- 238000005516 engineering processes Methods 0.000 description 3
- 230000001066 destructive Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011257 shell materials Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 230000004059 degradation Effects 0.000 description 1
- 238000006731 degradation reactions Methods 0.000 description 1
- 239000006185 dispersions Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
Abstract
Description
Technical field:
This technology belongs to semiconductor LED and relevant PN junction device thermal resistance examination and triage techniques field.This utility model is mainly used in fast, non-destructive is confirmed the device that the device thermal resistance is excessive.
Background technology:
During power semiconductor LED work, can produce a large amount of heat, and cause the temperature at semiconductor PN place to raise.There is hot unevenness like the fruit chip active area, and the heat dispersion variation that possibly bring of chip package process process, all can increases the thermal resistance of device, cause the heat-sinking capability variation.The LED light fixture is made up of LEDs up to a hundred, and indivedual high thermal resistance devices can cause high junction temperature work, will speed up device performance degradation, cause generation " blind ", influence the quality of whole light fixture.
Through the control mechanical hook-up that designs a calculating machine, before the dress light fixture, all LED are carried out the rapid screening of thermal resistance, reject high thermal resistance LED, improve the qualification rate and the quality of light fixture product greatly.Measurement mechanism in the utility model has tangible advance with technology aspect convenience, rapidity and the non-destructive measured.
The utility model content:
The main inventive point of the utility model is: designs the anchor clamps that can hold hundred LEDs, guaranteed the calorifics contact condition uniformity of every LEDs, and reliable and stable; Through pin platform structure, realize that the contact of LED electricity is convenient, reliable; Utilize programme controlled relay mode, realize the quick switching of LED sweep test in batches.
Power semiconductor LED thermal resistance rapid batch screening plant is characterized in that:
This device comprises from top to bottom: calorifics contact plate, measured device jig plate, pin platform;
The calorifics contact plate comprises two-layer up and down: go up sheet material, following sheet material, be drilled with the hole that needs test LED quantity on the sheet material down;
Be provided with the copper post between two sheet materials, the copper post is formed one by two concentric cylinders up and down, above right cylinder big; Following right cylinder is little; The big in the above bowl-shape pressure pad of the right cylinder bonding elasticity in upper end, the bowl-shape pressure pad of elasticity contacts with last sheet material, and top big right cylinder lower end is on following sheet material; Below little right cylinder pass down the hole on the sheet material;
The measured device jig plate; Prepare the circular hole of a plurality of LED bright dipping end lens size in the above, each circular hole both sides diameter end symmetry outward direction respectively carves a square gap, the sidewall of gap have be communicated with up and down cover two electrode of copper layer; LED bright dipping end down, the base end is up; And LED base end is aimed at above-mentioned little right cylinder;
The pin platform, below the position of answering with two electrode pairs of each LED, fixed two probes up, the probe below is provided with spring, and probe draws the electrode of LED outward, and through the lead-in wire on the pin platform, inserts the contact pin interface of pin platform.
The line of drawing from the probe station interface; Insert the switch option interface, be connected, the relay of controlling with the electronic signal of measured device anchor clamps onboard led quantity equity is arranged on this plate with the switch option board; Relay connects the gate logic chip; The switch option board connects LED thermo-resistance measurement appearance, and the switch option board connects computing machine, and computing machine is connected to LED thermo-resistance measurement appearance.
Further, the earth terminal of the adjacent two row LED of measured device jig plate connects together through the plate wiring, the shared row's probe of per two row LED samples.
Use said power semiconductor LED thermal resistance rapid batch screening plant and carry out method for screening, it is characterized in that:
With the copper post on the calorifics contact plate, aim at the tube shell bottom of sample LED, probe alignment is covered copper electrode, descend through operation calorifics contact plate, and the copper post contacted with the LED base, probe with cover copper electrode and contact.The effect of bowl-shape pressure pad of elasticity and probe springs guarantees that tested LED has good calorifics contact and contacts with electricity.
Line from the probe station interface is drawn inserts the switch option interface, is connected with the switch option board, and the relay on this plate is opened selection by the gate logic chip controls, accepts the gating instruction of computing machine, the scanning survey of control LED sample.The LED of gating inserts LED thermo-resistance measurement appearance.
Undressed make electric current before, the earlier selected measuring current that is no more than mA is measured the LED junction voltage under the measuring current, measures the temperature rise that adds behind the work electric current then, both is poor, is exactly the junction voltage changes delta Vn that LED work temperature rise causes.Junction voltage changes divided by temperature coefficient α and power P, is thermal resistance Rth=Δ Vn/ α P.The LED that thermal resistance exceeds criterion of acceptability is screened by rapid batch.
The device of the utility model can be realized extendability preferably to the number of measuring LED.
Description of drawings
Fig. 1 measured device jig plate
Fig. 2 copper-clad electrode
Fig. 3 calorifics contact plate
Fig. 4 pin platform
Fig. 5 probe
Fig. 6 measured device wiring layout
Fig. 7 switch option board
Fig. 8 annexation
Fig. 9 measurement result
Embodiment:
Power semiconductor LED thermal resistance rapid batch screening plant is characterized in that:
This device comprises from top to bottom: calorifics contact plate 200, measured device jig plate 100, pin platform 300;
Calorifics contact plate 200 comprises two-layer up and down: go up sheet material 201, following sheet material 202, be drilled with the hole that needs test LED quantity on the sheet material 202 down;
Be provided with the copper post between two sheet materials; The copper post is formed one by two concentric cylinders up and down; Top right cylinder is big, below right cylinder little, the bowl-shape pressure pad 204 of the big in the above right cylinder bonding elasticity in upper end; The bowl-shape pressure pad 204 of elasticity contacts with last sheet material 201, and top big right cylinder lower end is on following sheet material; Below little right cylinder pass down the hole on the sheet material 202;
Measured device jig plate 100; Prepare the circular hole of a plurality of LED bright dipping end lens size in the above, circular hole both sides diameter end symmetry outward direction respectively carves a square gap, the sidewall of gap have be communicated with up and down cover two electrode 102 of copper layer; LED bright dipping end down, the base end is up; And LED base end is aimed at above-mentioned little right cylinder;
Pin platform 300, below the position corresponding with two electrodes 102 of each LED, fixed two probes 301 up, the probe below is provided with spring, and probe draws the electrode of LED outward, and through the lead-in wire on 300 plates, inserts the contact pin interface 302 of pin platform 300.
The line of drawing from probe station interface 302; Insert switch option interface 403, be connected, the relay of controlling with the electronic signal of 100 onboard led quantity equity 401 is arranged on this plate with switch option board 400; Relay connects the gate logic chip; The switch option board connects LED thermo-resistance measurement appearance, and the switch option board connects computing machine 500, and computing machine is connected to LED thermo-resistance measurement appearance 600.
Use: with the copper post 203 on the calorifics contact plate, aim at the tube shell bottom of sample 101, probe 301 is aimed at and is covered copper electrode, descend through operation calorifics contact plate, and copper post 203 contacted with the LED base, probe 301 with cover copper electrode and contact.Because the effect of bowl-shape pressure pad 204 of elasticity and probe 301 springs guarantees that tested LED101 has good calorifics contact and contacts with electricity.
Line from probe station interface 302 is drawn inserts switch option interface 403, is connected with switch option board 400, and the relay on this plate is opened selection by 402 controls of gate logic chip, accepts the gating instruction of computing machine 500, the scanning survey of control LED sample.The LED of gating is linked into LED thermo-resistance measurement appearance by 405 buses.
In order to eliminate the line errors caused, undressed make electric current before, earlier selected measuring current generally is no more than 5mA; Measure the LED junction voltage under the measuring current; Measure the temperature rise add behind the work electric current then, both is poor, is exactly that the junction voltage that causes of LED work temperature rise changes.
The thermo-resistance measurement appearance can adopt (patent No.: ZL200510112676.0, denomination of invention: the temperature rise measuring method of semiconductor PN node diode device and device, open day: device on March 8th, 2006).
Select 100 of the 1WLED of Dongguan Kingsun Photoelectricity Co., Ltd products for use; And LED is inverted puts on the sample test position on 100 plates; With 100 plates of having put sample put into have the aligned hole 200 and 300 between, put down 200 plates, make every LED have good calorifics to contact with electricity.Start process of measurement, 100 LED switches of gating successively.Before every LED measured, measuring measuring current earlier was the PN junction voltage V0n under the 3mA, and the 350mA working current is connected in programmed control again; Connected 3 seconds, promptly heat is delivered to the time constant of contact 203, and working current is broken off in programmed control; Measure junction voltage Vn immediately; Both are because the difference Δ Vn of the junction voltage that temperature rise brings again divided by temperature coefficient α and power P, is thermal resistance Rth=Δ Vn/ α P.
Measurement result is shown in accompanying drawing 9, and as can be seen from the figure the thermal resistance LED that exceeds criterion of acceptability 10% and 20% is all screened, thereby has effectively improved the reliability of LED lamp assembly.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120249012 CN202159116U (en) | 2011-07-14 | 2011-07-14 | Heat resistance quick batch screening device of power semiconductor LED (Light-emitting Diode) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120249012 CN202159116U (en) | 2011-07-14 | 2011-07-14 | Heat resistance quick batch screening device of power semiconductor LED (Light-emitting Diode) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202159116U true CN202159116U (en) | 2012-03-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120249012 CN202159116U (en) | 2011-07-14 | 2011-07-14 | Heat resistance quick batch screening device of power semiconductor LED (Light-emitting Diode) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202159116U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102288639A (en) * | 2011-07-14 | 2011-12-21 | 北京工业大学 | Power semiconductor light-emitting diode (LED) thermal resistance rapid batch screening device and method |
| CN103323762A (en) * | 2013-06-07 | 2013-09-25 | 华南理工大学 | Detection device and method for LED chip and device |
| CN103792477A (en) * | 2014-02-20 | 2014-05-14 | 四川虹视显示技术有限公司 | OLED parallel detection sorting system |
| CN104101744B (en) * | 2013-04-10 | 2017-05-24 | 佛山市国星半导体技术有限公司 | Probe clamp, and LED rapid lightening testing apparatus and method |
-
2011
- 2011-07-14 CN CN 201120249012 patent/CN202159116U/en not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102288639A (en) * | 2011-07-14 | 2011-12-21 | 北京工业大学 | Power semiconductor light-emitting diode (LED) thermal resistance rapid batch screening device and method |
| CN104101744B (en) * | 2013-04-10 | 2017-05-24 | 佛山市国星半导体技术有限公司 | Probe clamp, and LED rapid lightening testing apparatus and method |
| CN103323762A (en) * | 2013-06-07 | 2013-09-25 | 华南理工大学 | Detection device and method for LED chip and device |
| CN103323762B (en) * | 2013-06-07 | 2016-03-02 | 华南理工大学 | A kind of pick-up unit for LED chip and device and method |
| CN103792477A (en) * | 2014-02-20 | 2014-05-14 | 四川虹视显示技术有限公司 | OLED parallel detection sorting system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| C14 | Grant of patent or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120307 Termination date: 20140714 |
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| EXPY | Termination of patent right or utility model |