CN202024942U - Device for detecting Te-rich phase in telluride semiconducting crystal - Google Patents
Device for detecting Te-rich phase in telluride semiconducting crystal Download PDFInfo
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- CN202024942U CN202024942U CN2010206713847U CN201020671384U CN202024942U CN 202024942 U CN202024942 U CN 202024942U CN 2010206713847 U CN2010206713847 U CN 2010206713847U CN 201020671384 U CN201020671384 U CN 201020671384U CN 202024942 U CN202024942 U CN 202024942U
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Abstract
The utility model discloses a device for detecting a Te-rich phase in a telluride semiconducting crystal, wherein the device is used for solving the technical problem that the viewing field of the conventional device for detecting the Te-rich phase in a semiconducting crystal is small. The device adopts the technical scheme as follows: a light source (1) is fixed at one end of an optical vibration isolation platform (9) through a supporting rod; an objective table (6) adopts an automatic three dimensional translation platform, is fixed on the optical vibration isolation platform (9) through the supporting rod, and is connected with a control computer; an objective lens (7) adopts an infrared light objective lens, and is fixed on the optical vibration isolation platform (9) through the supporting rod; an infrared CCD (Charge Coupled Device) (8) is connected with the control computer through a coaxial cable; a lens barrel (4) adopts a zooming lens barrel; and the objective lens (7) is connected with the infrared CCD (8) through the lens barrel (4). The infrared light objective lens and the infrared CCD are connected through the zooming lens barrel, so that the viewing field of the device for detecting the Te-rich phase in the semiconducting crystal is widened.
Description
Technical field
The utility model relates to a kind of pick-up unit, particularly a kind of device that detects rich Te phase in the tellurides as semiconductor crystal.
Background technology
With reference to Fig. 3, document " P.Rudolph; A.Engel; I.Schentke, A.Grochocki, Journal of Crystal Growth; 1995; 147:297-304 " discloses the device of rich Te phase in a kind of CdTe of detection and the CdZnTe crystal, promptly transforms on the basis of ordinary optical microscope, and this device comprises the light source 1 that shines sample, objective table 6, object lens 7, lens barrel 4, the infrared CCD 8 of clamping crystal 3 and support bar 10 and the base 11 that is used for fixing optical element.But because objective table 6 can't accurately be located in the horizontal direction, make that the visual field of observing is limited, common observed visual field is less than 2mm
2And can not realize the splicing of image, be unsuitable for the bigger crystal of test size.
Document " Xiaowen Zhang; Zenglin Zhao; Pengju Zhang; Rongbin Ji; Quanbao Li; Journal of Crystal Growth.2009,311:286～291 " a kind of method that detects rich Te phase in the crystal disclosed; reported the infrared permeation image that utilizes a certain cross section in the infrared permeation microscopic examination CdZnTe crystal; and by the quantity of the rich Te phase particle of statistics in unit area, and then obtain its surface density, but owing to lack the accurate location of thickness direction; fail to realize the hierarchical domains focal imaging, can not carry out the volume density analysis of rich Te phase particle.
Summary of the invention
Be difficult to obtain larger-size visual field in order to overcome the existing device that detects rich Te phase in the semiconductor crystal, and can not realize shortcoming to the hierarchical domains focal imaging of crystal thickness direction, the utility model provides a kind of device that detects rich Te phase in the tellurides as semiconductor crystal.This device has realized that by the enlargement factor that changes the zoom lens barrel visual field is adjustable, and the utilization of the three-dimensional translation stage automatically of high precision 4-coordinate simultaneously realizes the volume density of rich Te phase is observed.
The technical scheme that its technical matters that solves the utility model adopts: a kind of device that detects rich Te phase in the tellurides as semiconductor crystal, comprise light source 1, lens barrel 4, objective table 6, object lens 7 and infrared CCD 8, be characterized in also comprising lens 2, optical filter 5, optics vibration-isolating platform 9 and computer, described light source 1 is a halogen tungsten lamp, be fixed in an end of optics vibration-isolating platform 9 by support bar, and the luminous intensity by computer control light source 1, light source 1 preposition lens 2, the focus level of the distance adjustment light of change lens 2 and light source 1; Optical filter 5 is placed on lens 2 the right, and is fixed on the optics vibration-isolating platform 9 with support bar; Described objective table 6 is three-dimensional translation stages automatically, is positioned at optical filter 5 the right, is fixed on the optics vibration-isolating platform 9 by support bar, and links to each other with controlling computer; Described object lens 7 are infrared light object lens, are positioned at objective table the right, and are fixed on the optics vibration-isolating platform 9 with support bar; 8 of infrared CCDs are fixed in the other end of optics vibration-isolating platform 9 by support bar, and link to each other with controlling computer by concentric cable, are used for the collection of infrared light image; Lens barrel 4 is zoom lens barrels, and object lens 7 are connected with infrared CCD 8 by lens barrel 4.
Useful result of the present utility model is:
1, owing to objective table in this device has adopted the higher three-dimensional translation stage automatically of bearing accuracy, by adjusting the position of focal plane, promptly regulating the Z shaft position reaches along crystal thickness direction hierarchical domains focal imaging, realized three dimensional viewing, overcome the Two dimensional Distribution that existing equipment only can be analyzed rich Te phase rich Te phase.
2, owing to adopt the zoom lens barrel to connect infrared light object lens and infrared CCD in this device, overcome the fixing shortcoming in existing equipment visual field, the visual field is adjustable in 336 μ m * 230 μ m to 1.512 μ m * 1.032 mu m ranges.
3, adopt this method of testing, according to the automatic splicing that has realized based on the image collection of Labview and disposal system picture, the full-size of observing crystal is 80mm * 80mm * 50mm.
4, adopt image processing system, add up, obtained rich Te regularity of distribution of size, density on the three dimension scale in crystal splicing the different gray areas of good picture based on Labview.
Below in conjunction with the drawings and specific embodiments the utility model is elaborated.
Description of drawings
Fig. 1 is the apparatus structure synoptic diagram that the utility model detects rich Te phase in the tellurides as semiconductor crystal.
Fig. 2 is that embodiment 2 adopts rich Te phase density distribution plan in the CdZnTe crystal that these methods obtain.
Fig. 3 is the apparatus structure synoptic diagram that background technology detects rich Te phase in CdTe and the CdZnTe crystal.
Among the figure, 1-light source, 2-lens, 3-crystal, 4-lens barrel, 5-optical filter, 6-objective table, 7-object lens, 8-infrared CCD, 9-optics vibration-isolating platform, 10-support bar, 11-base.
Embodiment
Following examples are with reference to Fig. 1～3.
Embodiment 1 (device embodiment): the device that the utility model detects rich Te phase in the tellurides as semiconductor crystal comprises light source 1, lens 2, lens barrel 4, optical filter 5, objective table 6, object lens 7 and infrared CCD 8.Wherein, it is the irradiation bomb of the halogen tungsten lamp of 360～2000nm as the irradiation crystal 3 that light source 1 adopts spectral range, is fixed in an end of optics vibration-isolating platform 9 by support bar, and controls the intensity of light source 1 by computer.Light source 1 output terminal is placed lens 2, changes the distance of lens 2 and light source 1, the focus level that can regulate light.Optical filter 5 is placed in lens 2 backs, and is fixed on the optics vibration-isolating platform 9 with support bar, in order to obtain shining the monochromatic light of sample.Objective table 6 is three-dimensional translation stages automatically, be positioned at optical filter 5 after, be fixed on the optics vibration-isolating platform 9 by support bar, and link to each other with controlling computer, be used to adjust the position of crystal 3, its bearing accuracy is ± 0.001mm.Be positioned at objective table 6 backs and place infrared light object lens 7, and be fixed on the optics vibration-isolating platform 9, be used to focus on infrared light through crystal with support bar.Be positioned at the zoom lens barrel 4 behind the infrared light object lens 7, be used to connect infrared light object lens 7 and infrared CCD 8.8 of infrared CCDs are fixed on the optics vibration-isolating platform 9 by support bar, and link to each other with controlling computer by concentric cable, are used for the collection of infrared light image.
Embodiment 2～5th, method embodiment.
Embodiment 2: detect and be of a size of 10 * 10 * 2mm
3The CdZnTe crystal in size, shape and the density of rich Te phase particle.Step is as follows:
(a) open light source 1 power supply and infrared CCD 8 power supplys, preheating 20 minutes, so that output intensity is stable, infrared CCD 8 imaging noises and aberration are less, selecting wavelength simultaneously is the optical filter 5 of 980nm.
(b) the CdZnTe crystal 3 of handling well is fixed on the objective table 6, regulating light source 1 electric power outputting current is 5.9A, and luminous flux is 1450lm, moves horizontally the position of lens 2, makes gradation of image value that infrared CCD 8 collects 150.Regulate the position of X on the objective table 6, Y-axis and rotation R axle, make light beam line vertical irradiation CdZnTe crystal 3 to be measured.Adjust CdZnTe crystal 3 to be measured simultaneously, infrared light object lens 7, the center of infrared CCD 8 is point-blank.
(c) start objective table 6, regulate the position of Z axle, make infrared CCD 8 focal planes drop on the middle part of CdZnTe crystal 3 to be measured, guarantee the clear picture that obtains simultaneously, regulate the enlargement factor to 3 of zoom lens barrel 4, the single view size of infrared CCD 8 is 504 μ m * 344 μ m.
(d) along X, Y-axis with 2mm/s speed moving stage 6, make the visual field of infrared CCD 8 drop on the upper left corner of crystal, and record this moment location parameter, X=37.3475, Y=68.8437.Determine that according to the size of required observation crystal and the size of single view the required ranks value of picture mosaic is respectively 20 and 30, objective table 6 motion control parameters are set, the global cycle number of times is 30, step is for moving once along Y-axis along the X-axis reposition of moving after 20 times earlier again, participating in axle is X, Y-axis, and run unit is μ m and initial position.
(e) setting is respectively 20 and 30 based on the image collection of Labview and the ranks value in the process software.When beginning to test, move objective table 6 earlier, the back starts image capture software, stops objective table 6 earlier after operation finishes, and software carries out image mosaic automatically, and will piece together good image and export.
Add up piecing together the different gray areas of good image, can find that from Fig. 2 rich Te phase particle size mainly is distributed in 4～10 mu m ranges, density is 3～7.5 * 10
4/ cm
3
Embodiment 3: detect and be of a size of 10 * 10 * 2mm
3The CdTe crystal in size, shape and the density of rich Te phase particle.Step is as follows:
(a) open light source 1 power supply and infrared CCD 8 power supplys, preheating 20 minutes, so that output intensity is stable, infrared CCD 8 imaging noises and aberration are less, selecting wavelength simultaneously is the optical filter 5 of 980nm.
(b) the CdTe crystal 3 of handling well is fixed on the objective table 6, regulating light source 1 electric power outputting current is 6.4A, and luminous flux is 1550lm, moves horizontally the position of lens 2, and the gradation of image value that makes infrared CCD 8 collect reaches 125.Regulate the position of X in the objective table 6, Y-axis and rotation R axle, guarantee light beam line vertical irradiation CdTe crystal 3 to be measured.Adjust CdTe crystal 3 to be measured simultaneously, infrared light object lens 7, infrared CCD 8 centers are point-blank.
(c) start objective table 6, regulate the location parameter of Z axle, make infrared CCD 8 focal planes drop on the middle part of CdTe crystal 3 to be measured, guarantee the clear picture that obtains simultaneously, regulate the zoom multiple to 2 of zoom lens barrel 4, the single view size of infrared CCD 8 is 798 μ m * 545 μ m.
(d) along X, Y-axis with 2mm/s speed moving stage 6, make the visual field of infrared CCD 8 drop on the upper left corner of crystal, and record this moment location parameter, X=37.3475, Y=68.8437.Determine that according to the size of required observation crystal and the size of single view the required ranks value of picture mosaic is respectively 13 and 18, objective table 6 motion control parameters are set, the global cycle number of times is 18, step is for moving once along Y-axis along the X-axis reposition of moving after 13 times earlier again, participating in axle is X, Y-axis, run unit is μ m, simultaneously initial position is provided.
(e) setting is respectively 13 and 18 based on the image collection of Labview and the ranks value in the process software.When beginning to test, earlier operation objective table 6 backs start image capture softwares, stop objective table 6 earlier after operation finishes, after carry out image mosaic, and will piece together good image and export.
Embodiment 4: detect and be of a size of 16 * 12 * 2mm
3The CdMnTe crystal in size, shape and the density of rich Te phase particle.Step is as follows:
(a) open middle light source 1 power supply and infrared CCD 8 power supplys, preheating 30 minutes, so that output intensity is stable, infrared CCD 8 imaging noises and aberration are less, selecting wavelength simultaneously is the optical filter 5 of 1050nm.
(b) the CdMnTe crystal 3 of handling well is fixed on the objective table 6, regulating light source 1 electric power outputting current is 6.4A, and luminous flux is 16501m, moves horizontally the position of lens 2, and the gradation of image value that makes infrared CCD 8 collect reaches 180.Regulate the location parameter of X in the objective table 6, Y-axis and rotation R axle, guarantee light beam line vertical irradiation CdMnTe crystal 3 to be measured.Adjust CdMnTe crystal 3 to be measured simultaneously, infrared light object lens 7, infrared CCD 8 centers are point-blank.
(c) start objective table 6, regulate the location parameter of Z axle, make infrared CCD 8 focal planes drop on the middle part of CdMnTe crystal 3 to be measured, guarantee the clear picture that obtains simultaneously, regulate the zoom multiple to 1 of zoom lens barrel 4, the single view size of infrared CCD 8 is 1.512 μ m * 1.032 μ m.
(d) along X, Y-axis with 2mm/s speed moving stage 6, make the visual field of infrared CCD 8 drop on the upper left corner of crystal, and note initial position, X=38.3670, Y=70.6724.Determine that according to the size of required observation crystal and the size of single view the required ranks value of picture mosaic is respectively 11 and 12, objective table 6 motion control parameters are set, the global cycle number of times is 18, step is for moving once along Y-axis along the X-axis reposition of moving after 13 times earlier again, participating in axle is X, Y-axis, run unit is μ m, simultaneously initial position is provided.
(e) setting is respectively 13 and 18 based on the image collection of Labview and the ranks value in the process software.When beginning to test, earlier operation objective table 6 backs start image capture softwares, stop objective table 6 earlier after operation finishes, after carry out image mosaic, and will piece together good image and export.
Embodiment 5: detect and be of a size of 10 * 10 * 2mm
3The ZnTe crystal in size, shape and the density of rich Te phase particle.Step is as follows:
(a) open light source 1 power supply and infrared CCD 8 power supplys, preheating 30 minutes, so that output intensity is stable, infrared CCD 8 imaging noises and aberration are less, selecting wavelength simultaneously is the optical filter 5 of 950nm.
(b) the ZnTe crystal 3 of handling well is fixed on the objective table 6, regulating light source 1 electric power outputting current is 6.1A, and luminous flux is 1650lm, moves horizontally the position of lens 2, and the gradation of image value that makes infrared CCD 8 collect is 120.Regulate the location parameter of X in the objective table 6, Y-axis and rotation R axle, guarantee light beam line vertical irradiation ZnTe crystal 3 to be measured.Adjust ZnTe crystal 3 to be measured simultaneously, infrared light object lens 7, infrared CCD 8 centers are point-blank.
(c) start objective table 6, regulate the location parameter of Z axle, make infrared CCD 8 focal planes drop on the middle part of ZnTe crystal 3, guarantee the clear picture that obtains simultaneously, regulate the zoom multiple to 4.5 of zoom lens barrel 4, the single view size of infrared CCD 8 is 336 μ m * 230 μ m.
(d) along X, Y-axis with 2mm/s speed moving stage 6, make the visual field of infrared CCD 8 drop on the upper left corner of crystal, and note initial position, X=37.3475, Y=68.8437.Determine that according to the size of required observation sample and the size of single view the required ranks value of picture mosaic is respectively 13 and 18, objective table 6 motion control parameters are set, the global cycle number of times is 18, step is for moving once along Y-axis along the X-axis reposition of moving after 13 times earlier again, participating in axle is X, Y-axis, run unit is μ m, simultaneously initial position is provided.
(e) setting is respectively 13 and 18 based on the image collection of Labview and the ranks value in the process software.When beginning to test, earlier operation objective table 6 backs start image capture softwares, stop objective table 6 earlier after operation finishes, after carry out image mosaic, and will piece together good image and export.
Except that above embodiment, the pick-up unit that adopts the utility model to provide has detected CrZnTe, In
2Te
3And the rich Te phase in other type tellurides as semiconductor crystal, all obtained good effect.
Claims (2)
1. device that detects rich Te phase in the tellurides as semiconductor crystal, comprise light source (1), lens barrel (4), objective table (6), object lens (7) and infrared CCD (8), it is characterized in that: also comprise lens (2), optical filter (5), optics vibration-isolating platform (9) and computer, described light source (1) is a halogen tungsten lamp, be fixed in an end of optics vibration-isolating platform (9) by support bar, and the luminous intensity by computer control light source (1), the preposition lens of light source (1) (2), the focus level of the distance adjustment light of change lens (2) and light source (1); Optical filter (5) is placed on lens (2) the right, and is fixed on the optics vibration-isolating platform (9) with support bar; Described objective table (6) is three-dimensional translation stage automatically, is positioned at optical filter (5) the right, is fixed on the optics vibration-isolating platform (9) by support bar, and links to each other with controlling computer; Described object lens (7) are the infrared light object lens, are positioned at objective table the right, and are fixed on the optics vibration-isolating platform (9) with support bar; Infrared CCD (8) then is fixed in the other end of optics vibration-isolating platform (9) by support bar, and links to each other with controlling computer by concentric cable, is used for the collection of infrared light image; Lens barrel (4) is the zoom lens barrel, and object lens (7) are connected with infrared CCD (8) by lens barrel (4).
2. the device of rich Te phase in the detection tellurides as semiconductor crystal according to claim 1, it is characterized in that: described objective table, its bearing accuracy is ± 0.001mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010206713847U CN202024942U (en) | 2010-12-16 | 2010-12-16 | Device for detecting Te-rich phase in telluride semiconducting crystal |
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| CN2010206713847U CN202024942U (en) | 2010-12-16 | 2010-12-16 | Device for detecting Te-rich phase in telluride semiconducting crystal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169076A (en) * | 2010-12-16 | 2011-08-31 | 西北工业大学 | Device and method for detecting rich-Te phase in telluride semiconductor crystal |
| CN103983579A (en) * | 2014-05-04 | 2014-08-13 | 西北工业大学 | Device and method for detecting built-in electric field in telluride semiconductor detector |
-
2010
- 2010-12-16 CN CN2010206713847U patent/CN202024942U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169076A (en) * | 2010-12-16 | 2011-08-31 | 西北工业大学 | Device and method for detecting rich-Te phase in telluride semiconductor crystal |
| CN102169076B (en) * | 2010-12-16 | 2012-10-31 | 西北工业大学 | Device and method for detecting rich-Te phase in telluride semiconductor crystal |
| CN103983579A (en) * | 2014-05-04 | 2014-08-13 | 西北工业大学 | Device and method for detecting built-in electric field in telluride semiconductor detector |
| CN103983579B (en) * | 2014-05-04 | 2018-01-09 | 西北工业大学 | A kind of method for detecting tellurides as semiconductor detector built in field |
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Granted publication date: 20111102 Effective date of abandoning: 20130227 |
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