CN201859857U - Silicon wafer level image sensor test device adopting a LED backlight board and a parallel light barrel - Google Patents
Silicon wafer level image sensor test device adopting a LED backlight board and a parallel light barrel Download PDFInfo
- Publication number
- CN201859857U CN201859857U CN2010205704501U CN201020570450U CN201859857U CN 201859857 U CN201859857 U CN 201859857U CN 2010205704501 U CN2010205704501 U CN 2010205704501U CN 201020570450 U CN201020570450 U CN 201020570450U CN 201859857 U CN201859857 U CN 201859857U
- Authority
- CN
- China
- Prior art keywords
- probe
- level image
- led
- image sensor
- tested
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
A silicon wafer level image sensor test device adopting a LED backlight board and a parallel light barrel includes a light source (2) and a probe card (4), the probe card (4) is arranged above a silicon wafer (1) to be tested, a probe (5) arranged on the probe card (4) is directly contacted with a welding pad or projection to be tested of a CIS chip (6) on the silicon wafer (1) to be tested, the light source (2) is arranged above the probe card (4) such that light can be irradiated to the CIS chip (6), the light source (2) is a LED backlight board, the parallel light barrel (3) is arranged between the LED backlight board and the probe card (4), and the parallel light barrel (3) is provided with several baffle plates (7). According to the utility model, the LED is used as a backlight source, it is possible not only provide effective light irradiation, but also reduce thermal noise; the light barrel is introduced to ensure light emitted to the CIS chip to be parallel, structure is simple, practicability is good, and test accuracy is improved effectively.
Description
Technical field
The utility model relates to a kind of wafer level image sensor detector, especially utilizes led light source, the testing apparatus of the straightline propagation characteristic of light, specifically a kind of wafer level image sensor detector that adopts LED-backlit plate peace row optical tube.
Background technology
In existing wafer level image sensor test, normally utilize tester table and probe (Probe Card) to come each chip on the test wafer, be produced with electrical characteristic and the usefulness of guaranteeing chip according to design specification.Probe on the tester table (Probe) is contacted with weld pad (Pad) on the chip, so that directly to the chip input signal or detect and read output valve.Via the result of wafer sort, normally functioning chip just enters the encapsulation procedure of next stage.These test results also can feed back to design and analyze with manufacturer in addition, with the reference frame as following design usefulness and yield lifting.Therefore, wafer sort occupies extremely important position in manufacturing process.
At present, interference source is relatively more responsive to external world owing to imageing sensor CIS chip itself, is difficult to effectively get rid of interference in test, and the accuracy of test result will reduce greatly, can not satisfy the needs of the manufacturing.
Summary of the invention
The purpose of this utility model is that interference source is relatively more responsive to external world at present imageing sensor CIS chip itself, in test, be difficult to effectively get rid of and disturb, the problem that the accuracy of test result will reduce greatly proposes a kind of wafer level image sensor detector that adopts LED-backlit plate peace row optical tube.
The technical solution of the utility model is:
A kind of wafer level image sensor detector that adopts LED-backlit plate peace row optical tube, it comprises light source and probe, probe is positioned over the top of wafer to be tested, the tested weld pad or the projection of CIS chip directly contact on probe on the probe and the wafer to be tested, light source places the top of probe, make irradiate light on the CIS chip, it is characterized in that described light source is the LED-backlit plate, be provided with parallel optical tube between LED-backlit plate and probe, this parallel optical tube is provided with several baffle plates.
Wafer to be tested of the present utility model is the wafer level image transducer.
Several baffle plates of the present utility model evenly are provided with at interval.
The beneficial effects of the utility model:
The utility model is used for the way of wafer level image sensor test with LED-backlit plate and directional light tube, is to existing CIS(CMOS imageing sensor) a kind of improvement of chip die level testing apparatus.Provide the 180 stable light sources of spending directions by the LED-backlit plate, through optical tube the time, the multistage baffle plate on the optical tube inwall plays the function of selection, and most non-parallel incident lights will can not pass through optical tube and conductively-closed.
The utility model has been introduced LED as backlight, because led light source has high brightness, characteristic low in calories, can provide effective illumination in the test of wafer scale, has reduced thermal noise again, to effective improvement of wafer level image sensor test.The adding of these parts of optical tube, the light that has guaranteed to incide in the CIS chip is parallel rays, and it is simple in structure, and practicality is good, has effectively improved the accuracy of test.
Description of drawings
Fig. 1 is a vertical section structure schematic diagram of the present utility model.
Fig. 2 is a perspective view of the present utility model.
Fig. 3 is a plan structure schematic diagram of the present utility model.
Embodiment
Below in conjunction with drawings and Examples the utility model is further described.
As shown in Figure 1, a kind of wafer level image sensor detector that adopts LED-backlit plate peace row optical tube, it comprises light source 2 and probe 4, probe 4 is positioned over the top of wafer 1 to be tested, the tested weld pad or the projection of CIS chip 6 directly contact on probe 5 on the probe 4 and the wafer 1 to be tested, draw the chip signal, cooperate peripheral test instrument and software control to reach the purpose of automatic measurement again; Light source 2 places the top of probe 4, makes irradiate light on CIS chip 6, it is characterized in that described light source 2 is the LED-backlit plate, is provided with parallel optical tube 3 between LED-backlit plate and probe 4, and this parallel optical tube 3 is provided with several baffle plates 7.Described several baffle plates 7 evenly are provided with at interval.
Wafer to be tested 1 of the present utility model is the wafer level image transducer.
During concrete enforcement:
Adopt LED-backlit plate peace row optical tube 3 to be used for the test of the imageing sensor of wafer scale, its implementation process is:
1, after confirming that tester table power line, data wire butt joint are errorless, power-on,
2, the LED-backlit buttress sends the bright light of secretly meeting each other of fixed frequency according to testing software
3, light parallel rays after parallel optical tube 3 screenings incides on the CIS chip 6
4, after CIS chip 6 received light, tester table transferred light signal to the data message collection analysis, obtains a result.
The utility model does not relate to the part prior art that maybe can adopt all same as the prior art to be realized.
Claims (3)
1. wafer level image sensor detector that adopts LED-backlit plate peace row optical tube, it comprises light source (2) and probe (4), probe (4) is positioned over the top of wafer to be tested (1), probe (5) on the probe (4) directly contacts with tested weld pad or projection that wafer to be tested (1) is gone up CIS chip (6), light source (2) places the top of probe (4), make irradiate light on CIS chip (6), it is characterized in that described light source (2) is the LED-backlit plate, be provided with parallel optical tube (3) between LED-backlit plate and probe (4), this parallel optical tube (3) is provided with several baffle plates (7).
2. the wafer level image sensor detector of employing LED-backlit plate peace row optical tube according to claim 1 is characterized in that described wafer to be tested (1) is the wafer level image transducer.
3. the wafer level image sensor detector of employing LED-backlit plate peace row optical tube according to claim 1 is characterized in that described several baffle plates (7) evenly are provided with at interval.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205704501U CN201859857U (en) | 2010-10-21 | 2010-10-21 | Silicon wafer level image sensor test device adopting a LED backlight board and a parallel light barrel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205704501U CN201859857U (en) | 2010-10-21 | 2010-10-21 | Silicon wafer level image sensor test device adopting a LED backlight board and a parallel light barrel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201859857U true CN201859857U (en) | 2011-06-08 |
Family
ID=44105658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205704501U Expired - Fee Related CN201859857U (en) | 2010-10-21 | 2010-10-21 | Silicon wafer level image sensor test device adopting a LED backlight board and a parallel light barrel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201859857U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102565677A (en) * | 2012-01-19 | 2012-07-11 | 嘉兴景焱智能装备技术有限公司 | Test method of chips, test device thereof and using method of device |
| CN103336012A (en) * | 2013-07-04 | 2013-10-02 | 吴江市汇泉纺织有限公司 | Machine oil warning system of loom |
| CN106973287A (en) * | 2017-03-29 | 2017-07-21 | 张家港市欧微自动化研发有限公司 | A kind of test system for cmos sensor |
| CN106993184A (en) * | 2017-03-29 | 2017-07-28 | 张家港市欧微自动化研发有限公司 | A kind of method of testing for cmos sensor |
-
2010
- 2010-10-21 CN CN2010205704501U patent/CN201859857U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102565677A (en) * | 2012-01-19 | 2012-07-11 | 嘉兴景焱智能装备技术有限公司 | Test method of chips, test device thereof and using method of device |
| CN103336012A (en) * | 2013-07-04 | 2013-10-02 | 吴江市汇泉纺织有限公司 | Machine oil warning system of loom |
| CN106973287A (en) * | 2017-03-29 | 2017-07-21 | 张家港市欧微自动化研发有限公司 | A kind of test system for cmos sensor |
| CN106993184A (en) * | 2017-03-29 | 2017-07-28 | 张家港市欧微自动化研发有限公司 | A kind of method of testing for cmos sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI445929B (en) | A light emission measuring device, a light emission measuring method, a control program, and a readable recording medium | |
| CN201859857U (en) | Silicon wafer level image sensor test device adopting a LED backlight board and a parallel light barrel | |
| CN103308676B (en) | Gold strip reader and detection method | |
| CN201051102Y (en) | Quick tester for gold colloid | |
| CN106483051B (en) | A kind of device and mobile terminal for mobile terminal measurement atmosphere particle concentration | |
| CN204882561U (en) | Signal pickup assembly of fluorescence immunity quantitative analysis appearance | |
| KR20100026923A (en) | Test socket and test module | |
| CN203519657U (en) | Wafer level camera module (WLC) automatic test socket | |
| CN102879312B (en) | Method capable of continuously monitoring change of porosity of porous material and detecting porosity value | |
| CN103471821B (en) | LED desk lamp uniformity of illuminance and spectral characteristic detection and analytical equipment and method | |
| KR101380700B1 (en) | A test table with solar cells for light-emitting components and a test method thereof | |
| CN207964836U (en) | A kind of dry type fluorescence immune chromatography quantitative testing device | |
| CN203479725U (en) | Glass internal defect detection device | |
| CN203422480U (en) | Blood collection tube position detection and type identification device used for sampling blood uniform mixing instrument | |
| CN208323439U (en) | A kind of transplanter manipulator vibration detection device | |
| CN201859198U (en) | Wafer level CIS (contact image sensor) testing device adopting probe card level pupil lens | |
| CN105466337A (en) | Optical detection system and method for detecting fine pin points of PCB | |
| CN108088847A (en) | A kind of device for fast detecting of bga chip welding quality | |
| CN210690421U (en) | Detection system of portable gold mark detector based on silicon photocell | |
| CN2408571Y (en) | Luminous diode chip and epitaxy chip light intensity measurer | |
| CN208654022U (en) | A kind of biochemical substances detecting instrument based on optical means | |
| CN206056922U (en) | The device of light travels efficiency | |
| CN208224656U (en) | A kind of display screen detection device | |
| TWI453433B (en) | Wafer-level led measuring device and measuring method thereof | |
| TWI629473B (en) | Circuit board assembly detection system and detection method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SUZHOU RIYUEMING MICROELECTRONICS TECHNOLOGY CO., Free format text: FORMER OWNER: LI MING Effective date: 20110727 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 213000 CHANGZHOU, JIANGSU PROVINCE TO: 215347 SUZHOU, JIANGSU PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20110727 Address after: 215347, Jiangsu, Suzhou, Kunshan, Pakistan Town West 166 gentleman Ting Road Patentee after: SML (Suzhou) Technology Co., Ltd. Address before: 41 unit 602, golden new town, bell tower area, Jiangsu, Changzhou 213000 Patentee before: Li Ming |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110608 Termination date: 20131021 |