CN201842888U - Adjustor - Google Patents
Adjustor Download PDFInfo
- Publication number
- CN201842888U CN201842888U CN2010205651275U CN201020565127U CN201842888U CN 201842888 U CN201842888 U CN 201842888U CN 2010205651275 U CN2010205651275 U CN 2010205651275U CN 201020565127 U CN201020565127 U CN 201020565127U CN 201842888 U CN201842888 U CN 201842888U
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- CN
- China
- Prior art keywords
- setting device
- jet pipe
- base
- reaction chamber
- sloping platform
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Chemical Vapour Deposition (AREA)
Abstract
The utility model provides an adjustor, which is used for adjusting the vertical distance between nozzles and an electronic suction sucking disc in a chemical vapor deposition reaction chamber. The adjustor comprises a base and a ramp, the height of the base is larger than the vertical distance between the lowest point of the nozzle and the surface of the electronic sucking disc, the bottom of the ramp is tightly attached on the top of the base, the included angle between the inclined surface and the bottom of the ramp is equal to the included angle between the nozzle and the horizontal plane, and the inclined surface is provided with graduations. The adjustor can accurately adjust the vertical distance between the nozzles and the electronic suction sucking disc in the chemical vapor deposition reaction chamber, moreover, the structure of the adjustor is simple, and the adjustor is convenient to fabricate.
Description
Technical field
The utility model relates to a kind of semiconductor technology, relates in particular to a kind of setting device of chemical vapour deposition reaction chamber jet pipe to the vertical range of electronics sucker that be used for regulating.
Background technology
In semiconductor applications, reaction chamber is the equipment of using always, can be used for technological processs such as chemical gaseous phase deposition, physical vapor precipitation and etching.Processes such as wafer deposits in reaction chamber, growing film, for wafer, homogeneity is the principal element of wafer quality, also is the important factor of quality product, and the consistence of temperature has significant effects to the crystal column surface uniformity of film.
Fig. 1 is the vertical view in chemical vapour deposition reaction chamber described in the prior art, with reference to figure 1, wherein the chamber wall 101 ' of reaction chamber is provided with some jet pipes 103 ', and jet pipe 103 ' is fixed on the chamber wall 101 ', and the head of jet pipe 103 ' is positioned at the top of electronics sucker 105 '.In chemical vapor deposition processes, wafer is fixed on the top of electronics sucker 105 ', and jet pipe 103 ' ejection respective substance is at crystal column surface deposition or growing film.Described jet pipe 103 ' evenly is fixed on the chamber wall 101 ', and it is relative in twos, described as shown in Figure 1 jet pipe 103 ' can be eight, uniform distribution and relative in twos, the material of described jet pipe 103 ' is quartzy, and described quartz has good temperature capacity and can not adsorb the ion that sprays in the chemical meteorology deposition.Described jet pipe 103 ' links to each other with aluminum pipeline (not indicating among the figure) in the chamber wall 101 ', because described aluminum pipeline fixedly mounts, so the inclination angle of jet pipe 103 ' immobilizes, but the length difference that described jet pipe 103 ' stretches out, for the film that makes wafer deposition, growth in the chemical vapor deposition processes has good homogeneous, the top that requires each jet pipe 103 ' will equate to the vertical range of electronics sucker 105 ', and especially the height of the relative jet pipe 103 ' in position equates.And prior art can only be by estimating described jet pipe height or directly measure jet pipe 103 ' with ruler and regulate to the height of electronics sucker 105 ', the control method of described range estimation is very inaccurate, and the control method that adopts ruler directly to measure can occur the measuring distance non-vertical equally and cause measuring inaccurate.
The utility model content
The technical problems to be solved in the utility model is, provides a kind of jet pipe of can accurately regulating in the chemical vapour deposition reaction chamber to the device of the vertical range of electronics sucker.
For addressing the above problem, the utility model provides a kind of setting device, be used for regulating the vertical range of chemical vapour deposition reaction chamber jet pipe to the electronics sucker, described setting device comprises base and sloping platform, the height of described base is greater than the vertical range of described jet pipe lower-most point to the electronics chuck surface, the end face of described base is close in the bottom surface of described sloping platform, and the inclined-plane of described sloping platform and the angle of bottom surface equal the angle of described jet pipe and horizontal plane, and described inclined-plane is provided with scale value.
Further, described base and described sloping platform are formed in one.
Optionally, described base is a rectangular parallelepiped.
Optionally, described base is a rectangular parallelepiped, and the bottom surface length of described base is greater than the distance of described electronics sucker edge and described reaction chamber inwall.
Optionally, described base is a right cylinder.
Optionally, described base is a right cylinder, and the bottom surface diameter of described base is greater than the distance of described electronics sucker edge and described reaction chamber inwall.
Preferable, the material of described setting device is a plastic material.
Optionally, the material of described setting device is metal, plastics or wooden.
In sum, setting device described in the utility model can accurately be regulated in the chemical vapour deposition reaction chamber jet pipe to the vertical range of electronics sucker, and described setting device is simple in structure, is convenient to make.
Description of drawings
Fig. 1 is the vertical view in chemical vapour deposition reaction chamber described in the prior art.
Fig. 2 is the sectional view in chemical vapour deposition reaction chamber described in the prior art.
Fig. 3 is the structural representation of the utility model measuring apparatus one embodiment.
Fig. 4 is the structural representation of another embodiment of the utility model measuring apparatus.
Fig. 5 is the synoptic diagram of the utility model measuring apparatus using method one embodiment.
Embodiment
For making content of the present utility model clear more understandable,, content of the present utility model is described further below in conjunction with Figure of description.Certainly the utility model is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in the protection domain of the present utility model.
Secondly, the utility model utilizes synoptic diagram to carry out detailed statement, and when the utility model example was described in detail in detail, for convenience of explanation, synoptic diagram did not amplify according to general ratio is local, should be with this as to qualification of the present utility model.
Core concept of the present utility model is: because the inclination angle of jet pipe immobilizes in the described chemical vapour deposition reaction chamber, the length that the described jet pipe of event adjustment stretches out described reaction chamber chamber wall is identical, can make described jet pipe height identical, can regulate the setting device that described jet pipe stretches out the length of described reaction chamber chamber wall so design is a kind of, described setting device is provided with sloping platform, the inclined-plane of described sloping platform and the angle of bottom surface equal the angle of described jet pipe and horizontal plane, described sloping platform is provided with scale, described sloping platform is abutted against on the described jet pipe, adjust the length of described jet pipe, thereby make described jet pipe identical, thereby can be in chemical vapor deposition processes in the even deposit of crystal column surface to the vertical range of described electronics sucker, growing film.
Fig. 3 is the structural representation of setting device one embodiment in this practical information, and Fig. 5 is the synoptic diagram of the utility model measuring apparatus using method one embodiment.As Fig. 3 and shown in Figure 5, the utility model provides a kind of setting device, be used for regulating the vertical range of chemical vapour deposition reaction chamber jet pipe 103 to electronics sucker 105, described setting device comprises base 203 and sloping platform 201, the height of described base 203 is greater than the vertical range of described jet pipe 103 lower-most points to electronics sucker 105 surfaces, the end face of described base 203 is close in the bottom surface of described sloping platform 201, the angle of the inclined-plane of described sloping platform 201 and bottom surface 203 equals the angle of described jet pipe 103 and horizontal plane, and described inclined-plane is provided with scale 205.
Further, described base 203 is formed in one with described sloping platform 201.
Optionally, described base 203 is rectangular parallelepiped or right cylinder.Fig. 3, Fig. 4, Fig. 5 are the not structural representation of same embodiment of the utility model measuring apparatus, wherein base is a rectangular parallelepiped among Fig. 3, described base 203 is a rectangular parallelepiped, and the bottom surface length of described base 203 is greater than the distance of described electronics sucker 105 edges and described reaction chamber 101 inwalls.Base described in Fig. 4 203 is a right cylinder, and the bottom surface diameter of described base 203 is greater than the distance of described electronics sucker 105 edges and described reaction chamber 101 inwalls.Certainly the change of other shapes that can measure is all in thought range of the present utility model.
The material of described setting device is a plastic material.The material of described setting device is metal, plastics or wooden.
The use of setting device described in the utility model is, choose a highly suitable jet pipe, described setting device is placed on the described electronics sucker 105, move to its below from the side of this jet pipe 103, described base 203 is attached on the surface of described electronics sucker 105, described sloping platform 201 is attached to the below of this jet pipe, read and write down the scale value L of top on the scale 205 on the described sloping platform 201 of described jet pipe, described measuring apparatus shifts out from this jet pipe below, after moving to other jet pipes below, the top of other jet pipes is adjusted to scale value L place.
In sum, setting device of the present utility model can accurately be regulated in the chemical vapour deposition reaction chamber jet pipe to the vertical range of electronics sucker, and described setting device is simple in structure, is convenient to make.
Though the utility model discloses as above with preferred embodiment; right its is not in order to limit the utility model; have in the technical field under any and know the knowledgeable usually; in not breaking away from spirit and scope of the present utility model; when doing a little change and retouching, therefore protection domain of the present utility model is as the criterion when looking claims person of defining.
Claims (8)
1. setting device, be used for regulating the vertical range of chemical vapour deposition reaction chamber jet pipe to the electronics sucker, it is characterized in that, described setting device comprises base and sloping platform, the height of described base is greater than the vertical range of described jet pipe lower-most point to the electronics chuck surface, the end face of described base is close in the bottom surface of described sloping platform, and the inclined-plane of described sloping platform and the angle of bottom surface equal the angle of described jet pipe and horizontal plane, and described inclined-plane is provided with scale value.
2. setting device as claimed in claim 1 is characterized in that, described base and described sloping platform are formed in one.
3. setting device as claimed in claim 1 or 2 is characterized in that, described base is a rectangular parallelepiped.
4. setting device as claimed in claim 3 is characterized in that, the bottom surface length of described base is greater than the distance of described electronics sucker edge and described reaction chamber inwall.
5. setting device as claimed in claim 1 or 2 is characterized in that, described base is a right cylinder.
6. setting device as claimed in claim 5 is characterized in that, the bottom surface diameter of described base is greater than the distance of described electronics sucker edge and described reaction chamber inwall.
7. setting device as claimed in claim 1 or 2 is characterized in that, the material of described setting device is a plastic material.
8. setting device as claimed in claim 7 is characterized in that, the material of described setting device is metal, plastics or wooden.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205651275U CN201842888U (en) | 2010-10-16 | 2010-10-16 | Adjustor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205651275U CN201842888U (en) | 2010-10-16 | 2010-10-16 | Adjustor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201842888U true CN201842888U (en) | 2011-05-25 |
Family
ID=44037783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205651275U Expired - Fee Related CN201842888U (en) | 2010-10-16 | 2010-10-16 | Adjustor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201842888U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106767653A (en) * | 2016-12-21 | 2017-05-31 | 武汉华星光电技术有限公司 | A kind of grinding tool for cleaning mouth gold module |
-
2010
- 2010-10-16 CN CN2010205651275U patent/CN201842888U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106767653A (en) * | 2016-12-21 | 2017-05-31 | 武汉华星光电技术有限公司 | A kind of grinding tool for cleaning mouth gold module |
| CN106767653B (en) * | 2016-12-21 | 2019-06-07 | 武汉华星光电技术有限公司 | A kind of grinding tool cleaning mouth gold module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130319 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130319 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110525 Termination date: 20181016 |