CN201804909U - Light emitting diode (LED) bracket structure - Google Patents
Light emitting diode (LED) bracket structure Download PDFInfo
- Publication number
- CN201804909U CN201804909U CN2010202918072U CN201020291807U CN201804909U CN 201804909 U CN201804909 U CN 201804909U CN 2010202918072 U CN2010202918072 U CN 2010202918072U CN 201020291807 U CN201020291807 U CN 201020291807U CN 201804909 U CN201804909 U CN 201804909U
- Authority
- CN
- China
- Prior art keywords
- brackets
- supports
- conductive
- utility
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 239000000741 silica gel Substances 0.000 claims abstract description 6
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000004020 conductor Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910000510 noble metal Inorganic materials 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910001369 Brass Inorganic materials 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Landscapes
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The utility model relates to a light emitting diode (LED) bracket structure which comprises two brackets, two conductive pins, a semiconductor wafer, a conductive wire and a silica gel lamp cover, wherein the two brackets are connected with the two conductive pins; the semiconductor wafer is connected with the two brackets through the conductive wire; a rectangular fixing slot is respectively arranged below the two brackets; and the two conductive pins are inserted into the fixing slots. In the utility model, because the two brackets and the two conductive pins can be separated, conductive metals with lower prices can be used by the two brackets, the consumption of the noble metal copper in the traditional bracket can be greatly lowered, and the manufacturing cost is saved.
Description
Technical field
The utility model relates to a kind of led support structure.
Background technology
The LED light-emitting diode is a kind of solid-state semiconductor device, and it can directly be converted into light to electricity.The heart of LED is a semi-conductive wafer, and an end of wafer is attached on the support, and an end is a negative pole, and the other end connects the positive pole of power supply, makes entire wafer by epoxy encapsulation.Semiconductor wafer is made up of two parts, and a part is a P type semiconductor, occupies an leading position in its hole, the inside, and the other end is a N type semiconductor, mainly is electronics here.But when these two kinds of semiconductors couple together, just form a P-N knot between them.When electric current acted on this wafer by lead, electronics will be pushed to the P district, and electronics will send energy with the form of photon, the luminous principle of LED that Here it is then with hole-recombination in the P district.And the light wavelength color of light just is by the material decision that forms the P-N knot.
Existing led support structure mainly comprises two supports, two conductive feet, semiconductor wafer, conductor wire and silica gel lampshades.Because two supports and two conductive feet are formed integral piece, so two supports and two conductive feet must be used better red metal of conductivity or brass, thereby traditional led support infrastructure cost is higher.
Summary of the invention
The utility model has designed a kind of led support structure, and it has solved following technical problem:
(1) two supports and two conductive feet must be used better red metal of conductivity or brass in the supporting structure of traditional light-emitting diode, thereby traditional led support infrastructure cost is higher;
(2) supporting structure of traditional light-emitting diode is easy to generate a large amount of heats, causes the brightness of light-emitting diode to reduce.
In order to solve the technical problem of above-mentioned existence, the utility model has adopted following scheme:
A kind of led support structure, comprise two supports, two conductive feet, semiconductor wafer, conductor wire and silica gel lampshades, described two supports are connected with described two conductive feet, described semiconductor wafer is connected with described two supports by described conductor wire, the below of described two supports is respectively equipped with a rectangular holddown groove, and described two conductive feet are inserted in the described holddown groove.
Further, series connection one current-limiting resistance on the described conductor wire.
This led support structure is compared with traditional led support structure, has following beneficial effect:
(1) the utility model is because two supports can separate with two conductive feet, thereby two supports can use the lower conducting metal of price, can significantly reduce the use amount of conventional stent noble metal copper, have saved manufacturing cost.
(2) the utility model has been provided with the described current-limiting resistance of metering function owing to connect in the inside of light-emitting diode, and described current-limiting resistance reduces distributing of PN junction heat, guarantees the luminous intensity of light-emitting diode.
Description of drawings
Fig. 1: the unit construction schematic diagram of the utility model led support structure;
Fig. 2: the sectional view of the utility model led support structure;
Description of reference numerals:
The 1-support; The 2-conductive feet; The 3-semiconductor wafer; The 4-conductor wire; 5-silica gel lampshade; The 7-holddown groove; The 8-current-limiting resistance.
Embodiment
Below in conjunction with Fig. 1 to Fig. 2, the utility model is described further:
As depicted in figs. 1 and 2, a kind of led support structure, comprise two supports 1, two conductive feet 2, semiconductor wafer 3, conductor wire 4 and silica gel lampshades 5, described two supports 1 are connected with described two conductive feet 2, described semiconductor wafer 3 is connected with described two supports 1 by described conductor wire 4, the below of described two supports 1 is respectively equipped with a rectangular holddown groove 7, and described two conductive feet 2 are inserted in the described holddown groove 7.Because two supports 1 can separate with two conductive feet 2, thereby two supports 2 can use the lower conducting metal of price, can significantly reduce the use amount of conventional stent noble metal copper, have saved manufacturing cost.
Series connection one current-limiting resistance 8 on the described conductor wire 4.Current-limiting resistance reduces distributing of PN junction heat, guarantees the luminous intensity of light-emitting diode.
In conjunction with the accompanying drawings the utility model has been carried out exemplary description above; obvious realization of the present utility model is not subjected to the restriction of aforesaid way; as long as the various improvement of having adopted method design of the present utility model and technical scheme to carry out; or design of the present utility model and technical scheme are directly applied to other occasions without improving, all in protection range of the present utility model.
Claims (2)
1. led support structure, comprise two supports (1), two conductive feet (2), semiconductor wafer (3), conductor wire (4) and silica gel lampshade (5), described two supports (1) are connected with described two conductive feet (2), described semiconductor wafer (3) is connected with described two supports (1) by described conductor wire (4), it is characterized in that: the below of described two supports (1) is respectively equipped with a rectangular holddown groove (7), and described two conductive feet (2) are inserted in the described holddown groove (7).
2. according to the described led support structure of claim 1, it is characterized in that: described conductor wire (4) is gone up series connection one current-limiting resistance (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202918072U CN201804909U (en) | 2010-08-16 | 2010-08-16 | Light emitting diode (LED) bracket structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202918072U CN201804909U (en) | 2010-08-16 | 2010-08-16 | Light emitting diode (LED) bracket structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201804909U true CN201804909U (en) | 2011-04-20 |
Family
ID=43874412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202918072U Expired - Fee Related CN201804909U (en) | 2010-08-16 | 2010-08-16 | Light emitting diode (LED) bracket structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201804909U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105517260A (en) * | 2016-02-03 | 2016-04-20 | 泰州优宾晶圆科技有限公司 | Bulb and power source integration system |
-
2010
- 2010-08-16 CN CN2010202918072U patent/CN201804909U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105517260A (en) * | 2016-02-03 | 2016-04-20 | 泰州优宾晶圆科技有限公司 | Bulb and power source integration system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110420 Termination date: 20120816 |