CN201529636U

CN201529636U - Silicon wafer bubbling cleaning device

Info

Publication number: CN201529636U
Application number: CN2009200491154U
Authority: CN
Inventors: 苏世杰
Original assignee: LUOYANG SUNTECH POWER CO Ltd; Wuxi Suntech Power Co Ltd
Current assignee: LUOYANG SUNTECH POWER CO Ltd; Wuxi Suntech Power Co Ltd
Priority date: 2009-10-14
Filing date: 2009-10-14
Publication date: 2010-07-21
Anticipated expiration: 2019-10-14

Abstract

The utility model relates to the manufacturing field of photovoltaic cells, in particular to a silicon wafer bubbling cleaning device during a manufacturing process of solar cells. The cleaning device comprises a breather pipe disposed on the bottom of a cleaning groove, a plurality of air outlet holes are arranged on the lateral wall of the breather pipe, the breather pipe is connected with an air inlet pipe and is in the shape of a square, and the diameter of the breather pipe ranges from 3.1mm to 3.3mm. Compared with the prior art, the silicon wafer bubbling cleaning device can form small and uniform bubbles, then is lower in silicon wafer breakage rate when cleaning silicon wafers, better in cleaning effect, simple in structure and convenient in mounting, reduces cleaning time, and then saves water.

Description

Silicon chip bubbling cleaning device

Technical field

The utility model relates to photovoltaic cell manufacturing field, particularly the silicon chip bubbling cleaning device in the solar cell production process.

Background technology

In present solar cell field, because the thin in comparison film battery has much higher conversion efficiency, and technical maturity, equipment cost are also lower; In addition, along with the silicon materials price is more and more lower, the silicon substrate solar cell still is the main type in the practical application.In silicon substrate solar cell production process, need to use the matrix material of silicon chip as battery, in order to increase absorption to sunshine, need carry out matte to silicon chip surface and handle, form matte thereby promptly utilize acid solution or alkaline solution that silicon chip surface is corroded.After matte forms, also need silicon chip surface is cleaned.At present the wet-cleaning of silicon chip has had the cleaning way of kind more than 20, clean comprising bubbling, silicon chip clean totally whether, whether energy-conservation be from now on a development trend.

Desirable clean silicon chip surface should be that the regular arrangement of silicon atom stops formed surface, the silicon atom of interior surface is with covalent bonds, do not have other atom and the surface is outside, so the valence link of outer direction is unsaturated, exist can trapped electron surface state.But owing to silicon chip is to be come by silicon single crystal rod or the cutting of polysilicon heavy stone used as an anchor, the surface has the damage layer, so this desirable silicon face state is non-existent.After the silicon chip cutting is finished, silicon chip surface is that a section of silicon crystal is the dangling bonds which floor one deck arrives, its unsaturation chemical bond chemism height, play pendulum, molecule or atom around very easily adsorbing, the foreign particle that is adsorbed not is fixed, but is ceaselessly vibrating near its equilbrium position, the foreign particle that some of them are adsorbed breaks away from silicon chip surface owing to obtaining bigger kinetic energy, and desorb comes back in the surrounding medium and goes again.Meanwhile, the particle of other in medium can be adsorbed on silicon chip surface again again.In the ordinary course of things, the adsorbed foreign particle of silicon chip surface layer is in dynamic balance state.Owing to the inevitable property of absorption, caused the relativity of clean surface notion, present most of processing methods all are to wish that silicon chip surface is terminal with the hydrogen atom, its advantage is to have very little surface density of states, can make the electric architectural characteristic of device stable.

Because save silicon material cost and technological progress, the silicon wafer thickness of crystal class battery sheet is thinned to 160～180 present μ m gradually by 400～500 μ m of beginning, and silicon chip is more and more thinner.Existing bubbling cleaning device use usually diameter as the hard PVC pipe of 16mm as breather pipe, and be arranged to the sphere of movements for the elephants type, but there is following defective in use: the one, the escape pipe internal gas pressure is less, compare with the hydraulic pressure that water level higher in the rinse bath forms and to be more or less the same, cause nitrogen inlet place near zone to have bubbling to form, and the distant place does not have bubbling, bubble is very big and inhomogeneous, therefore at nitrogen inlet place near zone silicon chip surface there is great impact pressure because silicon chip is thin, causes crack of silicon chip even fragment easily; The 2nd, cleaning performance is bad, and scavenging period takes pure water than underswell; The 3rd, need weld the interface of breather pipe with air gun, make complicated, cost is higher.

Summary of the invention

The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of silicon chip bubbling cleaning device that fragment rate is littler, cleaning performance is better and simple in structure can form little and uniform bubble, use the time is provided.

The technical scheme that provides according to the utility model, bottom land at rinse bath is provided with breather pipe, offers a plurality of ventholes on breather pipe, is connected with air inlet pipe on breather pipe, described breather pipe arranges and is " mouth " font that a plurality of ventholes are evenly distributed on the breather pipe.

The diameter of described venthole is 0.3～1.0mm.Preferably, the diameter of venthole is 0.4mm.Distance between adjacent two ventholes is 15～25mm.Preferably, the distance between adjacent two ventholes is 20mm.

The diameter of described breather pipe is 3.1～3.3mm.Preferably, the diameter of breather pipe is 3.175mm.Rinse bath inwall crosswise fixed above breather pipe has been set up supporting plate, and the side of described supporting plate is upturned.

The utility model compared with prior art, square shape is arranged and the caliber of breather pipe is less because breather pipe is, can form little and uniform bubble after making nitrogen feed in the breather pipe with certain pressure, therefore fragment rate is littler during cleaning silicon chip, cleaning performance better, scavenging period shortens comparatively water saving, and simple in structure easy for installation.

Description of drawings

Fig. 1 is a front view of the present utility model.

Fig. 2 is a vertical view of the present utility model.

The specific embodiment

The utility model is described in further detail below in conjunction with concrete drawings and Examples.

As depicted in figs. 1 and 2: the bottom land at rinse bath 1 is provided with breather pipe 2, offers a plurality of equally distributed ventholes 3 on breather pipe 2, is connected with air inlet pipe 4 on breather pipe 2, and described breather pipe 2 is the setting of " mouth " font.Feed nitrogen in the breather pipe 2 and under certain pressure effect, upwards discharge and forms uniform bubble, be used for the silicon chip to be cleaned 6 in the rinse bath 1 is carried out the bubbling cleaning by a plurality of ventholes 3.Compare with breather pipe sphere of movements for the elephants shape arrangement of the prior art, breather pipe 2 can one-shot forming and only needed with the PVC band breather pipe 2 to be fixed on the bottom of rinse bath 1, need not with the interface of air gun welding breather pipe 2 again, and is simple in structure, easy for installation.

The diameter of breather pipe 2 is 3.1～3.3mm, and preferred, using thinner diameter is the breather pipe of 1/8 inch (3.175mm).Order is preferred, and the material of breather pipe is teflon (Teflon, a polytetrafluoroethylene (PTFE)).With the available technology adopting diameter is that the breather pipe of 16mm is compared, caliber reduces greatly, therefore after after feeding nitrogen, feeding breather pipe 2 with certain pressure, because the caliber of breather pipe 2 attenuates, the hydraulic pressure that the water level that intraductal atmospheric pressure increases and rinse bath is interior forms forms bigger pressure differential, therefore can form little and uniform bubble, fragment rate is littler when cleaning silicon chip, cleaning performance is better, especially being fit to the thin silicon sheet cleans, shorten 20～50% than original scavenging period, therefore can economize on water 20～50%.

The selection bit diameter is that the little drill bit of 0.2～0.65mm is holed on breather pipe 2, makes that the diameter of venthole 3 is 0.3～1.0mm.The diameter that can select pore is as required controlled the bubble size and the quantity of generation, selects suitable drill bit size and drill hole density.The aperture of general venthole 3 is more little, and drill hole density is high more, and number of bubbles is many more.Preferably, the diameter of venthole 3 selects 0.4mm.

Distance between adjacent two ventholes 3 is 15～25mm.Preferably, the distance between adjacent two ventholes 3 is 20mm.

Rinse bath 1 inwall crosswise fixed above breather pipe 2 has been set up supporting plate 5, and the side of described supporting plate 5 is upturned.During use, silicon chip to be cleaned is erected on the supporting plate 5 as shown in Figure 1.

Compared with prior art, device of the present utility model can be accelerated cleaning speed, improves cleaning performance, reduces fragment rate, and the simple cost of making of device is also lower.

The above is embodiment of the present utility model only, is not to be used to limit protection domain of the present utility model, but is used to illustrate the utility model.All within spirit of the present utility model and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within the protection domain of the present utility model.

Claims

1. silicon chip bubbling cleaning device, comprise the breather pipe (2) that is arranged on rinse bath (1) bottom land, offer a plurality of ventholes (3) on breather pipe (2), be connected with air inlet pipe (4) on breather pipe (2), it is characterized in that: described breather pipe (2) is the setting of " mouth " font.

2. silicon chip bubbling cleaning device as claimed in claim 1 is characterized in that: described a plurality of ventholes (3) are evenly distributed on the breather pipe (2).

3. silicon chip bubbling cleaning device as claimed in claim 1 is characterized in that: the diameter of described venthole (3) is 0.3～1.0mm.

4. silicon chip bubbling cleaning device as claimed in claim 3 is characterized in that: the diameter of described venthole (3) is 0.4mm.

5. silicon chip bubbling cleaning device as claimed in claim 1 or 2 is characterized in that: the distance between adjacent two ventholes (3) is 15～25mm.

6. silicon chip bubbling cleaning device as claimed in claim 5 is characterized in that: the distance between adjacent two ventholes (3) is 20mm.

7. silicon chip bubbling cleaning device as claimed in claim 1 is characterized in that: the diameter of described breather pipe (2) is 3.1～3.3mm.

8. silicon chip bubbling cleaning device as claimed in claim 7 is characterized in that: the diameter of described breather pipe (2) is 3.175mm.

9. silicon chip bubbling cleaning device as claimed in claim 1 is characterized in that: rinse bath (1) the inwall crosswise fixed in breather pipe (2) top has been set up supporting plate (5), and the side of described supporting plate (5) is upturned.