CN201521835U - Novel LED semi-conductive fluorescent lamp - Google Patents

Novel LED semi-conductive fluorescent lamp Download PDF

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Publication number
CN201521835U
CN201521835U CN2009202482821U CN200920248282U CN201521835U CN 201521835 U CN201521835 U CN 201521835U CN 2009202482821 U CN2009202482821 U CN 2009202482821U CN 200920248282 U CN200920248282 U CN 200920248282U CN 201521835 U CN201521835 U CN 201521835U
Authority
CN
China
Prior art keywords
led
fluorescent lamp
angle
flat
font
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009202482821U
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Chinese (zh)
Inventor
熊小伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dalian Meite Energy Saving Technology Co Ltd
Original Assignee
DALIAN SENGU NEW POWER ELECTRONIC TECHNOLOGY CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DALIAN SENGU NEW POWER ELECTRONIC TECHNOLOGY CO LTD filed Critical DALIAN SENGU NEW POWER ELECTRONIC TECHNOLOGY CO LTD
Priority to CN2009202482821U priority Critical patent/CN201521835U/en
Application granted granted Critical
Publication of CN201521835U publication Critical patent/CN201521835U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses a novel LED semi-conductive fluorescent lamp, which comprises an LED circuit board; the circuit board is designed to be a 120-degree deep V shape; a flat plate is additionally mounted at the bottom of the deep V shape to form a flat-bottomed V shape; two rows of light emitting diodes perpendicular to the board face are respectively mounted on the two bevel edges of the LED circuit board; and a row of longitudinal light emitting diodes perpendicular to the face of a baseplate are additionally mounted at the bottom of the flat-bottomed V shape. The utility model has the advantages that the lighting blind zone of the whole LED fluorescent lamp is eliminated through changing the angle of the LED semi-conductive fluorescent lamp, thereby bringing convenience to life and production; since no blind zone exists in the novel LED semi-conductive fluorescent lamp, the use quantity of lights can be decreased, and the resource is saved correspondingly; and compared with a traditional fluorescent light, the novel LED semi-conductive fluorescent lamp achieves high-performance light distribution, is more environment-friendly and healthier, has remarkable luminous efficacy and long service life, saves electrical energy, is firmer and more reliable, and is applicable to various occasions.

Description

The New LED semiconductor sun lamp
Technical field
The present invention relates to a kind of lighting apparatus, more particularly, it relates to a kind of New LED semiconductor sun lamp.
Background technology
Progress along with society and science and technology, lighting apparatus has become human daily life must an obligato part, in order to economize on resources, people are more and more to the use of LED fluorescent lamp, LED is light emitting diode again, the wafer that the core of light emitting diode is made up of p type semiconductor and n type semiconductor has a transition zone between p type semiconductor and n type semiconductor, be called p-n junction.In the PN junction of some semi-conducting material, the minority carrier of injection and majority carrier compound tense can discharge unnecessary energy and adopt with the form of light, thereby electric energy directly is converted to luminous energy.PN junction adds backward voltage, and minority carrier is difficult to inject, so not luminous.This diode that utilizes the making of injection electroluminescence principle is generally called LED light emitting diode.When it is in the forward duty (two ends add forward voltage), when electric current flowed to negative electrode from the LED anode, semiconductor crystal just sent the light from ultraviolet to infrared different colours, the power of light and current related.The fluorescent lamp of being made by its is than the more power saving of common fluorescent lamp, and longer service life need not to use ballast, starter, and does not have stroboscopic, and almost is non-maintaining.The basic structure of LED fluorescent lamp commonly used is an electroluminescent semi-conducting material now; place on the leaded shelf; use epoxy sealing then; play the effect of protection internal core; so the anti-seismic performance of LED is good; wherein, semiconductor is to make tabular, as shown in Figure 1; two row light emitting diodes are installed thereon side by side; there is certain defective in such LED fluorescent lamp, and as shown in Figure 2, the light angle that is installed in a LED lamp in the plane is from the γ angular region as central point with the LED lamp; wherein γ is 120 ° to the maximum; like this will have the blind area, whole room just has shaded side, and production and life are brought very big inconvenience.
Summary of the invention
The present invention is intended to solve the deficiency that existing LED fluorescent lamp exists, the New LED semiconductor sun lamp that provides a kind of light angle can reach 180 ° of angular regions; New LED semiconductor sun lamp of the present invention can reach perfect luminous intensity distribution, realizes the comprehensive shadow-free of illumination and not dazzling.
A kind of New LED semiconductor sun lamp, comprise dark V font led circuit plate, the light emitting diode of one row perpendicular to the plate face respectively is installed on dark two hypotenuses of V font led circuit plate, installs one flat plate additional, can constitute flat V font led circuit plate in dark V font led circuit plate bottom.Angle between two hypotenuses of dark V font led circuit plate is 120 °; Article two, the angle of hypotenuse and horizontal plane is 30 °; The light emitting diode of one row perpendicular to the circuit board face respectively is installed on two hypotenuses of dark V font led circuit plate, and the angle between this two row light emitting diode is 60 °.Angle between two hypotenuses of flat V font led circuit plate also is 120 °, and the angle of two hypotenuses and horizontal plane is 30 °; The light emitting diode of one row perpendicular to the circuit board face respectively is installed on two hypotenuses of flat V font led circuit plate, and the angle between the two is 60 °; The light emitting diode of one row perpendicular to base plate plate face also vertically is installed on the flat limit of flat V font led circuit plate.The plate face of dark V font led circuit plate and flat V font led circuit plate is the reflector face.
Advantage of the present invention is that LED fluorescent lamp of the present invention environmental protection is healthy again, by changing the angle of led circuit plate, has eliminated the lighting blind zone of whole LED fluorescent lamp, brings convenience for production and life; And, can reduce the quantity of the lamps that use for dead zone-eliminating because the new LED fluorescent lamp has not had the blind area more, saved resource from another angle.The reflective design of led circuit plate has realized high performance luminous intensity distribution, and spoke is anti-little, and is not dazzling, and the LED fluorescent lamp is than traditional fluorescent lamp, environment protection health more, and light transmittance efficiency is remarkable, saves energy, long service life, more solid and reliable, applicable situation is more various.
Description of drawings
Fig. 1 is plate LED daylight lamp circuit plate elevational schematic view;
Fig. 2 is single led fluorescent lamp illumination range schematic diagram;
Fig. 3 is the whole elevational schematic view of the dark V font of New LED semiconductor sun lamp of the present invention circuit board;
Fig. 4 be among the figure A-A to cross-sectional schematic;
Fig. 5 is the whole elevational schematic view of the flat V font of New LED semiconductor sun lamp of the present invention circuit board;
Fig. 6 be among Fig. 5 B-B to cross-sectional schematic.
The specific embodiment
As shown in Figure 3, New LED semiconductor sun lamp of the present invention, led circuit plate 1 is no longer made the one flat plate shape, but it is designed to have the V-shape of hexagonal angle, the V font has two kinds of forms, shown in Fig. 4 and 6, a kind of is dark V font, and a kind of is flat V font.As shown in Figure 4, the led circuit plate 1 of dark V font is respectively installed the light emitting diode 2 and 3 of row perpendicular to the plate face on two hypotenuses of V font, and the angle δ and the ε of two hypotenuses of V-shape and horizontal plane are 30 °.Angle α between two limits of the V word of led circuit plate 1 is 120 °, the light angle of two row light emitting diodes on two limits of V word can both reach 120 °, the angle β of this two row light emitting diode is 60 °, and the synthetic angle of this two row light emitting diode reaches 180 ° like this, has eliminated the blind area fully.As shown in Figure 6, occasion at the higher luminous intensity distribution performance of needs, can use the fluorescent lamp of flat V font led circuit plate 21 forms, flat V font is to add one flat plate in the bottom of dark V font, as shown in Figure 6, the light emitting diode 22 and 24 of one row perpendicular to the plate face respectively is installed on two hypotenuses of flat V font, the light emitting diode 23 of one row perpendicular to base plate plate face also vertically is installed on the flat limit, article two, the included angle X of hypotenuse and horizontal plane and μ are 30 °, article two, angle is 120 ° between the hypotenuse, angle ω on the hypotenuse between the two row light emitting diodes is 60 °, light emitting diode 22,23,24 light angle can both reach 120 °, three row diode combinations, realize the high-performance luminous intensity distribution, eliminate shade, remedy the deficiency of traditional LED lamp, reach the inaccessiable bigger illumination zone of traditional fluorescent lamp, eliminate lighting blind zone more broadly.
Contain a large amount of mercury vapours in traditional fluorescent lamp, if broken mercury vapour then can evaporate in the atmosphere.But the LED fluorescent lamp does not then use mercury, and the LED product is not leaded yet, and environment is played a protective role.Conventional lamp can produce a large amount of heat energy, and LED is a cold light source, then is electric energy all is converted to luminous energy, can not cause the waste of the energy, and light transmittance efficiency is more remarkable.The LED light fixture can not produce noise, is particularly suitable for using the occasion of precision electronic device.What traditional fluorescent lamp used is alternating current, so can produce 100-120 time stroboscopic each second.The LED fluorescent lamp adopts LED constant current work, is that alternating current directly is converted to direct current, effectively reduces the LED light decay, starts soon flicker free, protection eyes.Harmful substances such as the LED fluorescent lamp can not produce radiation such as ultraviolet light, infrared light, and is not mercurous, heating is few.Therefore can there be a lot of mosquitoes to be centered around by the lamp source as traditional light fixture.Indoor meeting becomes, and clean hygiene is clean and tidy more.Traditional fluorescent lamp is to light by the high voltage that rectifier discharges, and then can't light when voltage reduces.And the LED light fixture can both be lighted within the voltage of certain limit, can also adjust brightness.The power consumption of LED fluorescent lamp is below 1/3rd of traditional fluorescent lamp, and the life-span also is 10 times of traditional fluorescent lamp, with traditional fluorescent lamp brightness basically identical, be more than 30,000 hours normal service life, economize on electricity is up to 80%, can use for a long time and need not to change, and reduces labour cost.Be more suitable in the occasion that is difficult to change.LED lamp body itself uses be epoxy resin and and unconventional glass, firmer firm, also can not damage easily even pound at the ground onboard led, can use relievedly.LED semiconductor sun lamp external form, size are the same with traditional fluorescent lamp, alternative conventional lamp.In addition, can also make full use of the lamp that the coloury advantage of LED is made various glow colors.

Claims (4)

1. a New LED semiconductor sun lamp is characterized in that, comprises led circuit plate (1), and described led circuit plate is dark V font; Light emitting diode (2) and (3) of one row perpendicular to the plate face respectively are installed on (1) two hypotenuse of described dark V font led circuit plate.
2. New LED semiconductor sun lamp according to claim 1 is characterized in that, described dark V font led circuit plate (1) bottom installs one flat plate additional, constitutes flat V font led circuit plate (21); The light emitting diode (23) of one row perpendicular to base plate plate face vertically is installed on the flat limit of described flat V font led circuit plate (21).
3. New LED semiconductor sun lamp according to claim 1 and 2 is characterized in that,
Angle between two hypotenuses of described dark V font led circuit plate (1) is α; Described α angle is 120 °; Two hypotenuses of described dark V font led circuit plate (1) and the angle of horizontal plane are respectively δ and ε; Described δ angle is 30 °; Described ε is 30 °; Light emitting diode (2) and (3) of one row perpendicular circuit board face respectively are installed on two hypotenuses of described dark V font led circuit plate (1); Angle between described light emitting diode (2) and (3) is β; Described β angle is 60 °;
Angle between two hypotenuses of described flat V font led circuit plate (21) is 120 °; Two hypotenuses of described flat V font led circuit plate (21) and the angle of horizontal plane are respectively λ and μ; Described λ angle is 30 °; Described μ is 30 °; Light emitting diode (22) and (24) of one row perpendicular circuit board face respectively are installed on two hypotenuses of described flat V font led circuit plate (21); Angle between described light emitting diode (22) and (24) is ω; Described ω angle is 60 °.
4. New LED semiconductor sun lamp according to claim 3 is characterized in that, the plate face of described dark V font led circuit plate (1) and flat V font led circuit plate (21) is the reflector face.
CN2009202482821U 2009-11-20 2009-11-20 Novel LED semi-conductive fluorescent lamp Expired - Fee Related CN201521835U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009202482821U CN201521835U (en) 2009-11-20 2009-11-20 Novel LED semi-conductive fluorescent lamp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009202482821U CN201521835U (en) 2009-11-20 2009-11-20 Novel LED semi-conductive fluorescent lamp

Publications (1)

Publication Number Publication Date
CN201521835U true CN201521835U (en) 2010-07-07

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Application Number Title Priority Date Filing Date
CN2009202482821U Expired - Fee Related CN201521835U (en) 2009-11-20 2009-11-20 Novel LED semi-conductive fluorescent lamp

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014146438A1 (en) * 2013-03-22 2014-09-25 Lin Lapwah Led tube with large beaming angle of 120 degrees to 360 degrees

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014146438A1 (en) * 2013-03-22 2014-09-25 Lin Lapwah Led tube with large beaming angle of 120 degrees to 360 degrees

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GR01 Patent grant
C14 Grant of patent or utility model
TR01 Transfer of patent right

Effective date of registration: 20120827

Address after: 116013, 1808, Fuxing building, No. 87, Xin Lu, Xigang District, Liaoning, Dalian

Patentee after: Xiong Xiaowei

Address before: 116013, 1808, Fuxing building, No. 87, Xin Lu, Xigang District, Liaoning, Dalian

Patentee before: Dalian Sengu New Power Electronic Technology Co.,Ltd.

ASS Succession or assignment of patent right

Owner name: XIONG XIAOWEI

Free format text: FORMER OWNER: DALIAN SEN'GU NEW POWER ELECTRONIC CO., LTD.

Effective date: 20120827

C41 Transfer of patent application or patent right or utility model
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20120924

Address after: 116013 No. 315-2, Changchun Road, Xigang District, Liaoning, Dalian

Patentee after: Dalian Meite Energy Saving Technology Co Ltd

Address before: 116013, 1808, Fuxing building, No. 87, Xin Lu, Xigang District, Liaoning, Dalian

Patentee before: Xiong Xiaowei

ASS Succession or assignment of patent right

Owner name: DALIAN MEITE ENERGY-SAVING TECHNOLOGY CO., LTD.

Free format text: FORMER OWNER: XIONG XIAOWEI

Effective date: 20120924

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100707

Termination date: 20161120