CN201222506Y - Solar battery structure - Google Patents

Solar battery structure Download PDF

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Publication number
CN201222506Y
CN201222506Y CNU2008201266939U CN200820126693U CN201222506Y CN 201222506 Y CN201222506 Y CN 201222506Y CN U2008201266939 U CNU2008201266939 U CN U2008201266939U CN 200820126693 U CN200820126693 U CN 200820126693U CN 201222506 Y CN201222506 Y CN 201222506Y
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CN
China
Prior art keywords
thin film
transparency conducting
semiconductive thin
conducting layer
solar battery
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Expired - Fee Related
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CNU2008201266939U
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Chinese (zh)
Inventor
简毓苍
简永杰
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Contrel Semiconductor Technology Co Ltd
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Contrel Semiconductor Technology Co Ltd
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Priority to CNU2008201266939U priority Critical patent/CN201222506Y/en
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

The utility model relates to a solar cell structure, which comprises a substrate, a first transparent conductive layer, a first semi-conductor thin film, a second transparent conductive layer, a second semi-conductor thin film and a contact electrode, wherein the first transparent conductive layer is located on the substrate. The first semi-conductor thin film is located on the first transparent conductive layer. The second transparent conductive layer is located on the first semi-conductor thin film, and the second transparent conductive layer is provided with a first coarse surface. The second semi-conductor thin film is located on the second transparent conductive layer. The contact electrode is located on the second semi-conductor thin film.

Description

Solar battery structure
Technical field
The utility model relates to a kind of solar cell (Solar Electricity) structure, and particularly relevant for a kind of thin-film solar cells with stacked structure.
Background technology
At present because the international energy shortage, countries in the world continue to be devoted to study various feasible alternative energy sources always, and wherein but solar cell has rotating part easy to use, pollution-free, no, noiselessness, long service life, universalness radiation-inhibiting heat and size and can combine and advantages such as random variation with building, and attracted attention.
Typical solar cell is in respect of monocrystaline silicon solar cell, polycrystalline silicon solar cell, non-crystal silicon solar cell, compound solar cell and DSSC etc.And at present because there is lack of raw materials, therefore main development trend then is based on thin-film solar cells.
Thin-film solar cells 100 please refer to Fig. 1, and Fig. 1 is the generalized section according to a kind of film solar battery structure 100 shown in the known technology.General known film solar battery structure 100 is to utilize chemical vapour deposition technique tin ash (SnO in glass 101 and sheet resistor value＜20 Ω and penetrance＞75% under 200 ℃ 2) or zinc oxide (ZnO) conductive layer 102 on preparation (P-i-N) structure 103, again with mode plated metal contact electrode on P-i-N structure 103 of sputter, for example aluminium matter or silver electrode 104.Wherein P-i-N structure 103 is conduction band (Conduction Band) at semiconductor structure and (the Intrinsic Layer of intrinsic layer between the valence band (ValenceBand); I-Layer) introduce and be with (IntermediateBand) in the middle of extra, so as to absorb the script energy less than energy gap non-absorbent photon, so increase the photoelectricity flow.
Known P-i-N structure 103 generally is to adopt amorphous silicon hydride (Amorphous Silicon; A-Si:H) as intrinsic layer, introduce by the mode of atom doped (Doping) again and can be with in the middle of extra, make the energy rank of conduction band and valence band intercouple (Overlapping).Carrier transport factor (CarrierMobility) in order to increase film adopts microcrystal silicon (Microcrysatlline Silicon more at present; C-Si:H) material mixes as intrinsic layer.
Yet no matter be to adopt amorphous silicon hydride or the formed P-i-N structure of microcrystal silicon, its photoelectric conversion efficiency that can improve is still limited.Proposed use multilayer P-i-N structure and piled up mutually in order to solve this problem known technology, for example pile up mutually with amorphous silicon hydride P-i-N structure sheaf and microcrystal silicon P-i-N structure sheaf, the solar cell that forms is to improve the light absorption and the photoelectric conversion efficiency of thin-film solar cells.
But,, therefore reduced the light absorption and the photoelectric conversion efficiency of thin-film solar cells on the contrary because piling up of multilayer P-i-N structure makes light transmittance reduce easily.
Therefore having to provide a kind of cost cheap, simple in structure and can improve the thin-film solar cells of light absorption and photoelectric conversion efficiency.
The utility model content
Technical problem to be solved in the utility model is to provide a kind of cost cheap, simple in structure and can improve the solar battery structure of light absorption and photoelectric conversion efficiency.
To achieve these goals, an embodiment of the present utility model is providing a kind of solar battery structure, comprises base material, first transparency conducting layer, first semiconductive thin film, second transparency conducting layer, second semiconductive thin film and contact electrode.Wherein first transparency conducting layer is positioned on the base material.First semiconductive thin film is positioned on first transparency conducting layer.Second transparency conducting layer is positioned on first semiconductive thin film, and second transparency conducting layer has first rough surface.Second semiconductive thin film is positioned on second transparency conducting layer.Contact electrode is positioned on second semiconductor layer.
According to above-described embodiment, technical characterictic of the present utility model is to adopt the different semiconductive thin film of a plurality of materials that piles up mutually, absorb the incident light of different wave length, and between each semiconductive thin film, form transparency conducting layer with rough surface, improve the photoelectric conversion rate of semiconductive thin film by the diffraction of rough surface, overcoming incident light produces the penetrance deficiency because of multiple-level stack problem, and and then reach the generating efficiency that improves thin-film solar cells.
Description of drawings
For above-mentioned and other purpose of the present utility model, feature, advantage and embodiment can be become apparent, being described in detail as follows of appended accompanying drawing:
Fig. 1 is the generalized section according to a kind of film solar battery structure shown in the known technology;
Fig. 2 is the generalized section according to a kind of film solar battery structure shown in the preferred embodiment of the present utility model;
Fig. 3 is the generalized section according to a kind of film solar battery structure shown in the preferred embodiment of the present utility model;
Fig. 4 is the generalized section according to a kind of film solar battery structure shown in the preferred embodiment of the present utility model.
Be the clear technical characterictic of the present utility model of describing, above-mentioned icon does not proportionally illustrate, and the size of component size will change according to the demand of the description content of specification.
[main element symbol description]
100: thin-film solar cells 101: glass
102: conductive indium-tin oxide layer 103:P-i-N structure
104: aluminium electrode 200: film solar battery structure
201: 202: the first transparency conducting layers of base material
203: the first semiconductive thin film 203a:p layers
203b:i layer 203c:n layer
205: the second semiconductive thin films of 204: the second transparency conducting layers
205a:p layer 205b:i layer
205c:n layer 206: contact electrode
307: the three transparency conducting layer 307a: rough surface
407: the three transparency conducting layer 407a: the 3rd rough surface
409: the four transparency conducting layers of 408: the three semiconductive thin films
409a: the 4th rough surface
Embodiment
For above-mentioned and other purpose of the present utility model, feature, advantage and embodiment can be become apparent, the spy provides several film solar battery structures 200 to further specify as preferred embodiment.For the purpose of wherein it should be noted that for convenience of description, among the accompanying drawing of following examples, similar element will be indicated with identical diagrammatical symbol, however this do not represent each graphic between, have corresponding contact relation.
Please refer to Fig. 2, Fig. 2 is the generalized section according to a kind of film solar battery structure 200 shown in the preferred embodiment of the present utility model.Film solar battery structure 200 comprises: base material 201, first transparency conducting layer 202, first semiconductive thin film 203, second transparency conducting layer 204, second semiconductive thin film 205 and contact electrode 206.
Wherein, first transparency conducting layer 202 is positioned on the base material 201.In preferred embodiment of the present utility model, base material 201 is a kind of glass substrates, and first transparency conducting layer 202 then is that a kind of material is sheet resistor value＜20 Ω, and the tin ash of penetrance＞75% or zinc oxide.
First semiconductive thin film 203 is a kind of (P-i-N) structures that are positioned at first transparency conducting layer, 202 tops.Among embodiment more of the present utility model, first semiconductive thin film 203 is that a kind of intrinsic layer is the P-i-N structure of amorphous silicon material, and wherein the thickness essence of p layer 203a is between between the 5nm to 20nm; I layer 203b thickness essence is between between the 50nm to 500nm; The thickness essence of n layer 203c is between between the 5nm to 20nm.Main absorbing wavelength essence is between 300nm to 800nm.
Second transparency conducting layer 204 also is a kind of being positioned on first semiconductive thin film 203, and material is sheet resistor value＜20 Ω, and the tin ash of penetrance＞75% or zinc oxide.And among embodiment of the present utility model, second transparency conducting layer 204 has one first rough surface 204a.Among embodiment more of the present utility model, the first rough surface 204a is a kind of solid geometry pattern that forms on second transparency conducting layer 204 with etching mode, or when forming second transparency conducting layer 204, in the mode of chemical vapour deposition (CVD) or physical vapour deposition (PVD), on first semiconductive thin film 203, form second transparency conducting layer 204 with solid geometry pattern.
Second semiconductive thin film 205 is positioned on second transparency conducting layer 204, is a kind of P-i-N structure of being made up of microcrystal silicon or microcrystal silicon germanium material.Among present embodiment, the P-i-N structure that second semiconductive thin film 205 is made up of the microcrystal silicon material, wherein the thickness essence of p layer 205a is between between the 5nm to 20nm; I layer 205b thickness essence is between 1 μ m to 3 μ m; The thickness essence of n layer 205c is between between the 10nm to 50nm, and main absorbing wavelength essence is between 500nm to 1100nm.
206 of contact electrodes are the metal levels that is positioned on second semiconductor layer 205.Among present embodiment, contact electrode 206 is a kind of aluminium matter or silver electrode layer.
By the diffraction of second transparency conducting layer, 204 transparent geometrical patterns, can improve the photoelectric conversion efficiency of first semiconductive thin film 203 and second semiconductor layer 205, so that the generating efficiency essence of film solar battery structure 200 improves 9% to 10%.
Please refer to Fig. 3, Fig. 3 is the generalized section according to a kind of film solar battery structure 300 shown in the preferred embodiment of the present utility model.Film solar battery structure 300 comprises: base material 201, first transparency conducting layer 202, first semiconductive thin film 203, second transparency conducting layer 204, second semiconductive thin film 205, the 3rd transparency conducting layer 307 and contact electrode 206.Wherein film solar battery structure 300 is roughly the same with film solar battery structure 200, maximum difference is also to include between second semiconductive thin film 205 and the contact electrode 206 one deck the 3rd transparency conducting layer 307, and wherein the generation type of the 3rd transparency conducting layer 307 is similar with second transparency conducting layer 204 to material.The structure of other the 3rd transparency conducting layer 307 is also similar with second transparency conducting layer 204, equally has one second rough surface 307a, function also is to be used for incident light is carried out diffraction, to improve the photoelectric conversion efficiency of first semiconductive thin film 203 and second semiconductor layer 205.
Referring again to Fig. 4, Fig. 4 is the generalized section of a kind of film solar battery structure 400 of illustrating according to preferred embodiment of the present utility model.Film solar battery structure 400 comprises: base material 201, first transparency conducting layer 202, first semiconductive thin film 203, second transparency conducting layer 204, second semiconductive thin film 205, the 3rd transparency conducting layer 407, the 3rd semiconductive thin film 408, the 4th transparency conducting layer 409 and contact electrode 206.Wherein film solar battery structure 400 is roughly the same with film solar battery structure 200, and maximum difference is also to include between second semiconductive thin film 205 and the contact electrode 206 the 3rd transparency conducting layer 407, the 3rd semiconductive thin film 408 and the 4th transparency conducting layer 409.
Wherein, the 3rd semiconductive thin film 408 is a kind of P-i-N structures of being made up of the microcrystal silicon germanium material.Among present embodiment, the P-i-N structure that the 3rd semiconductive thin film 408 is made up of the microcrystal silicon material, wherein the thickness essence of p layer 408a is between between the 5nm to 20nm; I layer 408b thickness essence is between 1 μ m to 3 μ m; The thickness essence of n layer 408c is between between the 10nm to 50nm, and main absorbing wavelength essence is between 800nm to 1400nm.
No matter the 3rd transparency conducting layer 407 is all similar to second transparency conducting layer 204 on generation type, material and structure with the 4th transparency conducting layer 409, also have simultaneously one the 3rd rough surface 407a and the 4th rough surface 409a respectively, function also is to be used for incident light is carried out diffraction, to improve the photoelectric conversion efficiency of first semiconductive thin film 203, second semiconductor layer 205 and the 3rd semiconductive thin film 408.
Because first semiconductive thin film 203, second semiconductor layer 205 and the 3rd semiconductive thin film 408, be respectively by P-i-N structure that different materials constituted, have different energy gap scopes respectively, but the absorbing wavelength covering scope heighten, can improve absorption of incident light efficient.Add diffraction by second transparency conducting layer 204, the 3rd transparency conducting layer 407 and the 4th transparency conducting layer 409 transparent geometrical patterns, can improve the photoelectric conversion efficiency of first semiconductive thin film 203, second semiconductor layer 205 and the 3rd semiconductive thin film 408, so that the generating efficiency essence of film solar battery structure 400 improves 11% to 12%.
According to above-described embodiment, technical characterictic of the present utility model is to adopt the different semiconductive thin film of a plurality of materials that piles up mutually, absorb the incident light of different wave length, and between each semiconductive thin film, form transparency conducting layer with rough surface, improve the photoelectric conversion rate of semiconductive thin film by the diffraction of rough surface, overcoming incident light produces the penetrance deficiency because of multiple-level stack problem, and and then reach the generating efficiency that improves thin-film solar cells.
Though the utility model discloses as above with preferred embodiment; right its is not in order to limit the utility model; any correlative technology field has knows the knowledgeable usually; in not breaking away from spirit and scope of the present utility model; when can being used for a variety of modifications and variations, therefore protection range of the present utility model is as the criterion when looking the scope that accompanying Claim defines.

Claims (10)

1, a kind of solar battery structure is characterized in that, comprising:
One base material;
One first transparency conducting layer is positioned on this base material;
One first semiconductive thin film is positioned on this first transparency conducting layer;
One second transparency conducting layer is positioned on this first semiconductive thin film, and this second transparency conducting layer has one first rough surface;
One second semiconductive thin film is positioned on this second transparency conducting layer; And
One contact electrode is positioned on this second semiconductor layer.
2, solar battery structure according to claim 1 is characterized in that, this base material is a glass baseplate, and the material of this first transparency conducting layer is tin ash or zinc oxide, and this contact electrode is a metal level.
3, solar battery structure according to claim 1 is characterized in that, this first semiconductive thin film is one the one P-i-N structure that is made of amorphous silicon material.
4, solar battery structure according to claim 3 is characterized in that, the p layer thickness of a P-i-N structure is between between the 5nm to 20nm; The i layer thickness is between between the 50nm to 500nm; The n layer thickness is between between the 5nm to 20nm.
5, solar battery structure according to claim 4 is characterized in that, one the 2nd P-i-N structure that this second semiconductive thin film then is made up of microcrystal silicon or microcrystal silicon germanium material.
6, solar battery structure according to claim 5 is characterized in that, the p layer thickness of the 2nd P-i-N structure is between between the 5nm to 20nm; The i layer thickness is between 1 μ m to 3 μ m; The n layer thickness is between between the 10nm to 50nm.
7, solar battery structure according to claim 1 is characterized in that, the material of this second transparency conducting layer is tin ash or zinc oxide.
8, solar battery structure according to claim 1 is characterized in that, also comprises:
One the 3rd transparency conducting layer, between this contact electrode and this second semiconductive thin film, and the 3rd transparency conducting layer has one second rough surface;
One the 3rd semiconductive thin film is between this contact electrode and the 3rd transparency conducting layer; And
One the 4th transparency conducting layer, between this contact electrode and the 3rd semiconductive thin film, and the 4th transparency conducting layer has one the 3rd rough surface.
9, solar battery structure according to claim 8 is characterized in that, this first semiconductive thin film has one the one P-i-N structure that is made of amorphous silicon material; This second semiconductive thin film has one the 2nd P-i-N structure that is made of microcrystal silicon; The 3rd semiconductive thin film has one the 3rd P-i-N structure that is made of the crystallite SiGe.
10, solar battery structure according to claim 8, it is characterized in that, this first rough surface and this second rough surface, constituted by a solid geometry pattern respectively, improved the photoelectric conversion rate of this first semiconductive thin film and this second semiconductive thin film by the diffraction of this solid geometry pattern.
CNU2008201266939U 2008-07-11 2008-07-11 Solar battery structure Expired - Fee Related CN201222506Y (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104769726A (en) * 2012-09-05 2015-07-08 兹尼亚泰克有限公司 Photovoltaic devices with three dimensional surface features and methods of making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104769726A (en) * 2012-09-05 2015-07-08 兹尼亚泰克有限公司 Photovoltaic devices with three dimensional surface features and methods of making the same
US9853171B2 (en) 2012-09-05 2017-12-26 Zinniatek Limited Photovoltaic devices with three dimensional surface features and methods of making the same

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GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090415

Termination date: 20100711