CN1983509A - 基于聚焦离子束技术深刻蚀一维光子晶体的方法 - Google Patents
基于聚焦离子束技术深刻蚀一维光子晶体的方法 Download PDFInfo
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- CN1983509A CN1983509A CNA2005101264690A CN200510126469A CN1983509A CN 1983509 A CN1983509 A CN 1983509A CN A2005101264690 A CNA2005101264690 A CN A2005101264690A CN 200510126469 A CN200510126469 A CN 200510126469A CN 1983509 A CN1983509 A CN 1983509A
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Abstract
本发明在使用先进的聚焦离子束刻蚀技术加工GaN基激光器谐振腔镜面的工艺中提出了一种简洁、快速、有效的工艺步骤和方法,它包括以下三个主要步骤:计算和设计具有一维光子晶体结构的半导体/空气(DBR)反射镜的具体尺寸和容差要求,为FIB加工条件的选择提供依据;对所需加工的半导体激光二极管进行加工前处理准备。包括电接触和机械稳定性等方面的处理;根据加工要求确定合适的FIB加工条件并设计出合理的加工次序进行加工。这包括:离子束束流大小的选择;沉积保护层材料及厚度的选择;辅助刻蚀槽的设计和加工;放大倍数的选择及刻蚀图形的设计;半导体/空气(DBR)结构成型的刻蚀条件及刻蚀后处理方法等。
Description
技术领域
本发明属于光电子信息科学技术领域,具体涉及半导体光子晶体的制作方案和技术,即一种基于聚焦离子束技术制备半导体/空气交替的周期性一维光子晶体的方法和技术。特别是用于实现亚微米尺度高深宽比周期性沟槽结构光栅的方法,也是用于解决GaN基激光二极管及其它短腔长半导体激光器腔镜面制备难点以及研制可集成化高深宽比微型光栅和未来光集成回路的一种先进方法。
背景技术
聚焦离子束(FIB)刻蚀是上世纪90年代才出现的一种先进的干法刻蚀技术,FIB技术能实现离子束的图形化刻蚀和图形化诱导沉积。其主要功能包括:离子束诱导沉积直接进行微米甚至纳米尺度的图形化掩膜保护(沉积材料有金属Pt、W和绝缘材料SiO2);在刻蚀区直接用CAD生成刻蚀图形;数字扫描控制的聚焦精细的高能离子束进行图形化直写式刻蚀;用气体选择刻蚀方式进行选择性刻蚀和精细修补;利用成像技术可对刻蚀结果进行原位观察,对刻蚀形状做即时反馈等。
FIB的刻蚀是用高能聚焦离子束轰击样品,使样品中的原子从表面溅射出来,以物理的方式进行刻蚀加工。与化学腐蚀相比不会对掩膜下衬底边缘腐蚀;与RIE、ICP、CAIBE等干法刻蚀相比,不需要复杂的掩膜和图形转移,可以以直写的方式将设计好的图形刻在需要加工的区域;此外,它对不同材料尤其是同一材料系中的不同材料的刻蚀选择性不强,这一点亦非常不同于湿法腐蚀和其它的干法刻蚀技术;特别是FIB在小的束流下加工的线宽可以达到10nm,且有很好的深宽比(可达10∶1),是一种高精度的深亚微米的图形制备技术。
光子晶体是介质折射率在波长尺度范围内发生周期性变化从而可产生光子带隙的微结构材料。理论和实验证实,就像利用半导体操纵电子那样,人们可利用光子晶体来操纵光子,从而制造出各种新型的微、纳米光子学器件。两种介质交替的多层膜和深刻蚀的半导体/空气周期性结构实质上都是典型的一维光子晶体。其最广泛的应用是制成各种光栅性薄膜和微结构,比如各种分布布拉格反射器(DBR)等。研究表明,半导体/空气一维光子晶体只需几个周期就可达到很高的反射率,同时具有较宽的半高宽。
半导体激光二极管(LD)是一种小型便捷的固体激光光源,广泛应用于光通信、光存储(VCD、DVD)等信息技术领域,也是光电集成回路中重要的有源器件。波长为0.4微米的GaN基蓝紫光激二极管(LD)是信息科技领域下一代DVD超高密度光存取技术的关键性器件——光源,可使DVD存储容量比用现有红光LD光源的光盘增至4-5倍,当前GaN基激光器已成为世界各主要国家研究和发展的热点。
在现有传统的边发射半导体激光器镜面的制作中面临各种技术问题有待解决。比如在腔面自然解理后还需要通过蒸镀多层介质膜来提高反射率;又如研制集成光路和短腔LD的镜面必须采用干法刻蚀代替自然解理;再如GaN基短波长激光器因与衬底晶格严重失配、解理腔镜面反射率极低、波长短对腔镜面平整度要求苛刻等问题成为研制GaN基激光器的关键性难题。现有各种方法的共同特点是工艺技术繁复、制备工序多、周期长、更难以实现集成光路中的激光腔镜面。
采用FIB技术制备半导体/空气一维光子晶体便成为研制边发射半导体激光器高质量镜面的一个优选方案,也是一维光子晶体的直接而有效的应用,尤其可直接运用于解决GaN基激光器镜面的关键性技术难点,并可制成具有各种功能的高深宽比微型光栅,还可望用于研制各种集成光电和未来的集成光子学回路。
发明内容
本发明提出基于半导体一维光子晶体概念并结合先进的FIB刻蚀技术,发展了一套在半导体上制作亚微米级高深宽比布拉格组合光栅即一维光子晶体的方法和加工工艺,找到了用FIB解决深亚微米尺度、高深宽比和侧壁陡直平整沟槽刻蚀的技术关键和诀窍。本发明根据在先发明专利申请“基于一维光子晶体的腔结构及其制备方法”(申请号为200510011368.9)设计思想和方法,此项技术已直接运用于解决GaN基激光器谐振腔镜面制备的难点,特别是成功获得GaN基激光器腔镜面。实现GaN基周期小(低达400nm或更小)、深达1.5微米或更深的垂直沟槽(侧壁垂直度达88°以上)的半导体/空气一维光子晶体,是目前FIB制备出的周期最短的GaN基布拉格光栅,达到了国际先进水平,因此无论从材料系对象、制备工艺技术以及一维光子晶体布拉格反射器的组合诸方面均体现了本发明的创造性与新颖性。发明的方法和技术方案也已证明用于其它半导体材料系激光器的可行性,并可用于发展新型光子集成回路。
本发明的目的是提供一种工序简单、快速、有效的制备一维光子晶体的制备方法。也是一种可直接运用于研制新型半导体激光二极管谐振腔镜面的制备方案及方法,比如在半导体激光二极管的边发射条形结构两端采用FIB技术加工,按发明专利“基于一维光子晶体的腔结构及其制备方法”(申请号200510011368.9)的方法可制作出的多种组合的一维光子晶体腔镜面结构。
本发明包括以下三个主要步骤:1)计算和设计具有一维光子晶体结构的半导体/空气(DBR)布拉格光栅的具体尺寸和容差要求,为FIB加工条件的选择提供依据;2)对所需加工的半导体样品进行加工前处理准备。包括电接触和机械稳定性等方面的处理;3)根据加工要求确定合适的FIB加工条件并设计出合理的加工次序进行加工。这包括:离子束束流大小的选择;沉积保护层材料及厚度的选择;辅助刻蚀槽的设计和加工;放大倍数的选择及刻蚀图形的设计;半导体/空气(DBR)结构成型的刻蚀条件及刻蚀后处理方法等。
通过上述工艺步骤,一次性完成高反射率谐振腔镜面的加工。
附图说明
下面结合在半导体激光二极管上研制一维光子晶体的实例进一步详细地以附图说明本发明采用聚焦离子束刻蚀的加工步骤:图1现有未经聚焦离子束刻蚀的典型的半导体激光二极管结构示意图;图2用聚焦离子束诱导沉积铂(Pt)金属膜保护层;图3在待加工一维光子晶体区域的条型结构两侧用聚焦离子束刻蚀出两个槽口;图4用聚焦离子束刻蚀出半导体/空气组合的一维光子晶体;图5聚焦离子束刻蚀半导体/空气组合的一维光子晶体样品剖面示意图;图中标记内容如下:1-外延衬底;2-n-型区;3-多量子阱有源层;4-p-型区;5-p-型欧姆接触层;6-n-型欧姆接触层;7-离子束诱导沉积的Pt保护层;8-聚焦离子束刻蚀的槽口;9-半导体/空气一维光子晶体的深刻蚀空气缝隙;D1-一维光子晶体中的半导体层D2-一维光子晶体中刻蚀的空气缝隙。
具体实施方式
下面参照本发明的附图,更详细的描述出本发明的最佳实施例。
本实施方式中以中心波长在405nm的GaN激光器作为加工对象,用FIB技术制作一维光子晶体反射镜面为最佳实例,对本发明进行说明。
实例中所用的氮化物基激光二极管结构为典型的边发射半导体激光器结构,如图1所示,值得指出,图1的结构也可以其它结构的半导体样品来代替,即采用本项发明以聚焦离子束刻蚀技术在其它半导体样品上同样实现深刻蚀的一维光子晶体。半导体激光二极管芯的外延多层结构为传统的“分别限制”结构,由金属有机化合物气相沉积(MOCVD)技术生长而成,其发光的有源层由多量子阱组成,有源层夹在P型和N型层的中间,并且分别具有正负两个电注入接点区域,发光区为条形结构,所述条形结构可以是波导结构中的氧化条形波导结构或脊条形波导结构。条形的宽度为2至20微米或更宽。通过常规的半导体微加工工艺制作出分立管芯的芯片。
考虑中心波长在405nm的GaN激光器,设计加工的一维光子晶体为空气/半导体(DBR),考虑到当DBR周期数大于3时,反射率已大于99%。所以对于405nm的器件我们将DBR的对数选为3个周期。同时注意到半导体层或空气隙的尺度会因加工过程中的一些不稳定因素发生涨落,在考虑反射率大于90%的情况下,半导体层或刻蚀沟槽即空气隙的加工容差可以在设定尺寸左右变化约20-30nm。
下面为加工激光器一维光子晶体谐振腔镜面的详细过程及步骤:1)设计和计算半导体/空气一维光子晶体结构的具体尺寸参数和加工的容差,为FIB刻蚀条件的选择提供依据;2)确保加工对象在样品台上有良好的电接触和机械稳定性,以防样品因充放电和机械漂移给加工精度带来影响;3)如图3所示,在待加工的区域先用聚焦离子束诱导沉积大小和厚度适当的铂(Pt)金属薄膜保护层,以保证刻蚀侧壁的平整度要求;
4)在一维光子晶体结构加工区的条型结构两侧开适当大小和深度的槽口,以避免刻蚀过程聚焦离子束引起的反沉积现象,获得更好的深宽比和刻蚀侧壁的垂直度;5)在待加工一维光子晶体区域选择适当的放大倍数并生成刻蚀图形,以提高图形生成精度;6)通过选择合适的离子束束流,聚焦、消像散,获得好的离子束探针,以保证刻蚀精度;7)如图4所示为用聚焦离子束刻蚀出半导体/空气组合的一维光子晶体,根据情况可采用一次法(一次刻蚀成型)或两次法(两次刻蚀成型)刻出半导体/空气组合的一维光子晶体。刻蚀的尺寸和精度由1)中计算确定,刻蚀深度由激光二极管外延结构决定,以深达n区限制层以下为宜;图5所示为聚焦离子束刻蚀半导体/空气组合的一维光子晶体样品剖面示意图;8)通过对加工的图形原位观察,做适当的修改;9)通入金属增强刻蚀气体,选择合适的离子束束流对加工区做后处理,以减小损伤层和清除刻蚀反沉积物质。
本发明的积极效果:光子晶体是折射率在波长尺度范围内发生周期性变化从而使色散关系发生改变、可产生光子带隙的具有微结构的材料。理论和实验证实,人们可利用光子晶体微结构来操纵光波,因此借助基于光子晶体概念的微纳米光子学及器件应用展现出广阔的发展前景。由半导体/空气交替结构组成的一维周期性光子晶体,可形成各种分布布拉格光栅,比如可用于获得微型高反射镜、微型波导、微腔激光器及滤波器等。
传统的(如GaAs或InP基材料系)边发射半导体激光器的谐振腔镜面一般由自然解理面组成。但是其反射率取决于半导体材料的折射率,这样,GaAs或InP基的自然解理镜面反射率理论极限值约为30%,而GaN基仅为18%。为此,在传统的半导体边发射激光器制备工艺中一般采用先制备出自然解理的谐振腔镜面,再通过蒸镀多层介质薄膜来提高镜面的反射率,这样的制备方法步骤多,工艺繁复,而且只能制备分立的激光器,无法实现半导体激光器的光集成。显然,采用半导体/空气一维周期性光子晶体来充当激光器谐振腔镜面,显示了明显的优越性:可一次性同时替代腔镜解理和多层膜蒸镀的研制工序;不仅如此,它也是使现有的分立的边发射半导体激光器实现光集成的必由技术途径。
由于需要深亚微米的刻蚀,现有的半导体/空气一维周期性光子晶体的技术方案主要采用电子束曝光和干法刻蚀相结合的微加工技术来实现,其制备工序繁复、周期长、技术难度大。采用了聚焦离子束刻蚀技术免除了繁复的工序,一次性快速灵活地完成了光子晶体的制备体现无可比拟的优越性。
本发明的主要优点:本发明以先进的聚焦离子束刻蚀技术工艺一次性代替了传统的自然腔镜面的解理和多层介质薄膜的蒸镀多次步骤,得到高反射率的谐振腔镜面。既得到了较高反射率的镜面又简化了工艺步骤。具体而言:1)制备方法简单易行。一次完成了多个步骤所需达到的效果,简化了工艺步骤;2)尤其是解决了蓝宝石衬底上生长的GaN基激光器的谐振腔镜面制作的难点;3)可用于制作GaN基激光器的集成光路;4)本发明的方法不仅适用于GaN基激光二极管,而且也可用于其它各种波段和材料系的半导体激光二极管及其微型光栅和集成光路的制作、研究和生产。
因此本发明提出的方法具有积极的效果。为FIB技术研制和实现周期小至亚微米尺度的深刻蚀的半导体/空气一维光子晶体方面提供了工艺步骤简单和现实可行的先进、高效的制造方法。
尽管为说明目的公开了本发明的最佳实施例和附图,其实在用FIB研制不同材料系的半导体/空气一维光子晶体中,由于刻蚀出具有高深宽比、侧壁垂直和平整的沟槽的一维光子晶体的技术难度最大,本项发明当然也适用于不能同时满足上述要求的任何光栅的制作;由于GaN发光波长最短,要求加工的光子晶体尺度最小,因而GaN基的光子晶体的制作难度最大,我们也已同时采用本发明的技术成功实现了波长较长的红光波段InGaAlP系一维光子晶体,并用于红光InGaAlP半导体激光器腔镜面的研制,当然也适用于波长更长的红外波段的半导体光子晶体的研制。所以本领域的技术人员有必要指出:在不脱离本发明及所附的权利要求的精神和范围内,各种替换、变化和修改都是可能的。因此,本发明不应局限于最佳实施例和附图所公开的内容。
Claims (7)
1.一种基于聚焦离子束技术深刻蚀一维光子晶体的方法,具体包括以下三个步骤:1)计算和设计具有一维光子晶体结构的半导体/空气布拉格光栅的具体尺寸和容差要求,为FIB加工条件的选择提供依据;2)对所需加工的半导体样品进行加工前处理准备;3)根据加工要求确定合适的FIB加工条件并设计出合理的加工次序进行加工;这包括:离子束束流大小的选择;沉积保护层材料及厚度的选择;辅助刻蚀槽的设计和加工;放大倍数的选择及刻蚀图形的设计;半导体/空气结构成型的刻蚀条件及刻蚀后处理方法。
2.根据权利要求1所述的基于聚焦离子束技术深刻蚀一维光子晶体的方法,其特征在于,对所需加工的半导体样品进行加工前处理准备具体为:电接触和机械稳定性方面的处理。
3.根据权利要求1所述的基于聚焦离子束技术深刻蚀一维光子晶体的方法,其特征在于:离子束束流大小的选择具体根据一维光子晶体结构的半导体/空气反射镜的具体尺寸和容差要求决定。
4.根据权利要求1所述的基于聚焦离子束技术深刻蚀一维光子晶体的方法,其特征在于,沉积保护层材料及厚度的选择具体为:在待加工的区域先用聚焦离子束诱导沉积大小和厚度适当的铂(Pt)金属薄膜保护层,以保证刻蚀侧壁的平整度要求。
5.根据权利要求1所述的基于聚焦离子束技术深刻蚀一维光子晶体的方法,其特征在于,辅助刻蚀槽的设计和加工具体为:在一维光子晶体结构加工区的条型结构两侧开适当大小和深度的槽口,以避免刻蚀过程聚焦离子束引起的反沉积现象,获得更好的深宽比和刻蚀侧壁的垂直度。
6.根据权利要求1所述的基于聚焦离子束技术深刻蚀一维光子晶体的方法,其特征在于,通过选择合适的离子束束流,聚焦、消像散,获得好的离子束探针,以保证刻蚀精度。
7.根据权利要求1所述的基于聚焦离子束技术深刻蚀一维光子晶体的方法,其特征在于,刻蚀后进一步如下处理:通过对加工的图形原位观察,做适当的修改;通入金属增强刻蚀气体,选择合适的离子束束流对加工区做后处理,以减小损伤层和清除刻蚀反沉积物质。
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CN103545714A (zh) * | 2013-10-20 | 2014-01-29 | 北京工业大学 | 一种具有新型近腔面电流非注入区结构的半导体激光器及制造方法 |
CN103545714B (zh) * | 2013-10-20 | 2016-04-06 | 北京工业大学 | 一种具有新型近腔面电流非注入区结构的半导体激光器及制造方法 |
CN109412015A (zh) * | 2018-11-23 | 2019-03-01 | 中国科学院半导体研究所 | 单空间模低发散角窄线宽复合光子晶体激光器 |
WO2021168853A1 (zh) * | 2020-02-29 | 2021-09-02 | 华为技术有限公司 | 一种dfb激光器 |
CN111969072A (zh) * | 2020-08-17 | 2020-11-20 | 南方科技大学 | 一种基于量子点光栅增强的光电探测器及其制备方法和探测光的调整方法 |
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