CN1925001B - Magnetic read/write head with microtexture and method for producing same - Google Patents
Magnetic read/write head with microtexture and method for producing same Download PDFInfo
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- CN1925001B CN1925001B CN2005100969942A CN200510096994A CN1925001B CN 1925001 B CN1925001 B CN 1925001B CN 2005100969942 A CN2005100969942 A CN 2005100969942A CN 200510096994 A CN200510096994 A CN 200510096994A CN 1925001 B CN1925001 B CN 1925001B
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- magnetic head
- magnetic
- write
- little line
- magnetic read
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Abstract
This invention relates to magnetic read and write air supportive surface to form finger fringe which comprises the following steps: a, arraying magnetic heads to the tray with each head comprising onepole tip; b, loading the tray into the processor chamber with pre-set pressure vacuum; c, guiding the oxygen process gas into the said process chamber; d, exposing the magnetic head to the process gasetching means to etch on the surface to form two phases. This invention discloses the magnetic head structure through above method.
Description
Technical field
The present invention relates to a kind of magnetic read/write magnetic head and manufacture method thereof that is used for hard disk drive (HDD), refer to that especially a kind of air-supported (ABS) at magnetic head goes up the method that forms little line (micro-texture).
Background technology
Hard disk drive is along with digital device, need such as digital camera, digital audio/video equipment even digital television etc. the high capacity storage space equipment development and develop rapidly.Therefore, the market demand of hard disk drive is very big, and this market demand impels hard disk drive to develop to two aspects: high surface density and little volume.
Described hard disk drive comprises plural disk, and each magnetic disk surface has the magnetic coating that is used for digital-information recording.Described magnetic read/write magnetic head can be moving on the magnetic surface of described disk the data of access on it.High area recording density can be by improving magnetic disk surface the performance of magnetic coating or the size that reduces the magnetic read/write magnetic head of access data on magnetic coating obtain.The size that reduces W head means that then read/write signal dies down, and correspondingly, track width and/or track pitch are also corresponding to be reduced.Yet; the key that reduces track width and/or track pitch is to improve the position control ability of W head; the control ability of flying height for example; its representative is when the distance of magnetic head magnetic head and magnetic disk surface when magnetic disk surface moves, and also comprises the thickness of protective coating of magnetic head and magnetic disk surface and magnetic head pole tip cave in (recession) or the like.
On the other hand, the volume that reduces hard disk drive is a systems engineering, not only will relate to the physical size that changes each parts of hard disk drive, also relates to the optimization again of the flying power performance of magnetic head.Hard disk drive at present commonly used be used for desk-top computer 3.5 " hard disk drive and be used for notebook computer 2.5 " hard disk drive.And the size that is used for the hard disk drive of portable digital audio-frequency/video equipment has dropped to 1 " even 0.85 ".
The magnetic read/write magnetic head is the critical component of hard disk drive.The magnetic read/write magnetic head comprises the ceramic matrix of control head flying height.Adopt sedimentation or etching method to form on the surface of described ceramic matrix such as patterns (pattern) such as " contact of taking off, land ", " air cushion surface " and negative pressure cavities.Described magnetic read/write magnetic head also comprises the function sandwich construction that is arranged on the described ceramic matrix.Described function sandwich construction comprises pole tip (pole tips) and read/write line connecting terminal or the solder contacts of being made up of thin film magnetic write coil and giant magnetoresistance circuit.
Described magnetic read/write magnetic head has a very smooth surface at magnetic pole tip place.Described smooth surface forms by the matrix that grinds the magnetic read/write magnetic head usually.The roughness on the very smooth surface of described magnetic head is less than 0.3nm.Polish process (lapping process) also can help to control the pole tip depression.
For undersized hard disk drive (being generally known as mini drive), the surfaceness of magnetic head matrix increases, promptly have more coarse matrix surface, purpose is in order to improve taking off (take-off) and landing (touch-down) performance of magnetic read/write magnetic head.Described magnetic head matrix is made with AlTiC usually, and wherein AlTiC is Al
2O
3The potpourri of (aluminium oxide) and TiC (titanium carbide) comprises embedding Al
2O
3The island TiC particle of matrix in mutually.
United States Patent (USP) the 5th, 010,429 and 5,052, disclosed the technology that employing sputtering technology (sputtering process) forms magnetic head matrix rough surface for No. 099.The object height of magnetic head matrix roughness (distance from the top to the bottom) is about the 50-300 dust, and peak value (outburst area) width and peak separation are from being about the 5-20 micron.This is not enough for mini drive, and purpose of the present invention just provides a kind of little line of improvement (micro-texture) on air-supported (ABS) of magnetic read/write magnetic head, to improve the flying quality of magnetic head.
Summary of the invention
Fundamental purpose of the present invention is to provide magnetic read/write magnetic head on a kind of disc driver, that have the little line of low clearance of the flying quality that can improve the magnetic read/write magnetic head on its air-supported.
Another object of the present invention is to provide a kind of method that forms little line, this method can be by (ion beam etching IBE) is applied to realize in the conventional head manufacturing process with sputter (sputtering) or ion beam milling.
Another object of the present invention is to provide a kind of method that forms little line, this method can not cause does not wish the electrical damage to the magnetic magnetic head that produces, can keep the high yield of product simultaneously.
For achieving the above object, according to the present invention, a kind of method that forms little line on the magnetic read/write magnetic head comprises the steps: to provide a magnetic head with the surface after the grinding; The surface after the above-mentioned grinding of etching in comprising the gas of oxygen with plasma or ion beam, thereby the selectivity that the alumina base that improves little line is gone up mutually at emboliform titanium carbide second, and then form and a plurality ofly constitute two stage structures that top step, aluminium oxide constitute the base frame rank by titanium carbide particle.Described base frame rank are approximately the 10-50 dust to the distance of top step, and the distance between adjacent titanium carbide particle is approximately 0.2-3 μ m.
The present invention also provides the magnetic read/write magnetic head that is formed with little line on a kind of air-supported.Described magnetic head has than better the taking off and land performance of traditional magnetic head.In addition, can not produce electronics damage phenomenon when making little line on the magnetic read/write magnetic head, product also can be kept high yield.
For making the present invention easier to understand, further set forth the different specific embodiment of the present invention below in conjunction with accompanying drawing.
Description of drawings
Figure 1A-1D is the synoptic diagram of a kind of flow process of manufacturing magnetic read/write magnetic head of the present invention;
Fig. 2 A-2D is the synoptic diagram of the another kind of flow process of manufacturing magnetic read/write magnetic head of the present invention;
Fig. 3 is the synoptic diagram that forms the equipment of little line of the present invention by plasma on the magnetic read/write magnetic head;
Fig. 4 is the synoptic diagram that forms the equipment of little line of the present invention by ion beam on the magnetic read/write magnetic head;
Fig. 5 has showed that described magnetic head has the form on the AlTiC surface of little line;
Fig. 5 A-5E has showed the little line of magnetic head of the present invention under different conditions respectively.
Embodiment
Accompanying drawing, particularly Figure 1A-1D have showed that air-supported (ABS) at the magnetic read/write magnetic head goes up the process that forms little line, described magnetic head can be the magnetic head of 30% (pico) or 20% magnetic head, as previously mentioned, described magnetic read/write magnetic head can move on the surface scribbles the surface of spinning disk of one deck magnetic material.The magnetic read/write magnetic head has one air-supported (ABS), reads or write data towards the magnetic recording surface and from this magnetic recording surface.With reference to Figure 1A, described magnetic read/write magnetic head 10 comprises a surface 12 that is positioned on the disk and faces the magnetic recording surface (not shown) of disk.Described surperficial 12 are made into ABS by following flow process.
At first, described surperficial 12 will make it smooth through fine lapping, and surfaceness reaches 0.2-0.4nm, shown in Figure 1A.On the surface 12 of grinding, plate one deck protective layer then, for example diamond-like-carbon (DLC) layer.Next, surface 12 will experience a series of processing procedure, comprises photoetching (photolithography) and ion etching, thereby forms the groove (or step) 14 that is used for controlling air-flow and pressure on surface 12.On surface 12, form little line (illustrating) subsequently, shown in Fig. 1 C with hacures.Then further handle and finish the processing of the ABS face shown in Fig. 1 D.
Selectively, shown in Fig. 2 A-2D, the surface 12 of described magnetic head 10, processed and form little line (micro-texture) after being ground and plate diamond like carbon carbon-coating (ginseng Fig. 2 A), shown in Fig. 2 B hacures.Then, shown in Fig. 2 C, on surface 12, form groove 14 (or step), then further handle and finish the processing of the ABS shown in Fig. 2 D.
Light shield comprises positive polarity photoresist light shield and negative polarity photoresist light shield, can be used to protect the specific region on the surface 12 in forming the process of little line, magnetic pole tips for example, thus little line can be formed on these zones.
Can utilize chemical vapour deposition technique (CVD), ion beam depositing method (IBD) and filtering cathode arc method (FCA) on the magnetic read/write magnetic head, to form protective seam (overcoat) traditionally.Generally speaking, the technology of formation protective seam generally included for three steps: prerinse, plating supporting layer (adhesion layer) and coating diamond-like carbon-coating (DLC).
Described magnetic head is cleaned in air usually, in the vacuum processing chamber that is evacuated of packing into then.Organic solvent when magnetic head can absorb moisture, carbon dioxide even erase head with processed surface usually in air.During prerinse, by inert gas, for example argon carries out plasma etching or ion beam milling and removes surface contamination with processed magnetic head.Through etching process, the minute quantity material is removed from the magnetic head matrix surface, and marked change does not take place the roughness on surface yet.In other words, the surfaceness of magnetic head (Ra) still remains on about 0.3nm.
After the prerinse, on the processed surface of magnetic head, plate one deck supporting layer.The most handy silicon of described supporting layer forms, because silicon can make easier the plating of diamond-like-carbon layer (DLC layer).In addition, when the coating diamond-like carbon-coating, as presoma (precursor), and pure graphite post (graphite cylinder) is used as the FCA target in CVD technology and IBD technology for methane or ethene.
The present invention to form a little line and improves pre-wash step in order to go up in the AlTiC of magnetic head 10 substrate (" the magnetic read/write magnetic head base material " that comprise the TiC of 64% Al2O3 and 36%).This step can utilize existing equipment to finish under the situation that does not increase the processing time substantially, and this makes technology of the present invention very practical.The present invention can pass through several common process, comprises that plasma etching process and ion beam milling technology realize, will describe respectively below.
Fig. 3 has showed an equipment that carries out plasma etching process, is used for forming on the matrix of magnetic read/write magnetic head little line.With the magnetic head of array format, also be called magnetic stripe (rowbar), be fixed on the delivery pallet, described delivery pallet is adorned/is unloaded port one 02 by one and packs in the described equipment.In the present invention, use a mechanical arm 104 the delivery pallets from the vacuum transfer 106 of adorning/unloading port one 02 and move on to described equipment.Then, described vacuum transfer 106 is pumped into the vacuum with predetermined pressure, and then, described delivery pallet is moved in the plasma etching chamber 108.
Next carry out plasma etching process, the plasma etching chamber 108 that the delivery pallet of receiving is housed in it is evacuated to predetermined pressure, a kind of processing gas, for example the mixed gas of oxygen or oxygen-inert gas is introduced in the plasma etching chamber 108 through mass flow controller (MFC) valve (not marking).After pending gas was introduced, plasma was lighted.There are several modes can produce plasma.The most frequently used plasma is exactly direct capacitance coupling plasma or the inductively coupled plasma that utilizes radio-frequency voltage to produce.Certainly, also can for example strengthen microwave source and produce plasma with the method for some newly-developeds with electron cyclotron resonace.Among the present invention, the key point that forms little line is to regulate substrate bias (substrate bias).The capacitive coupling plasma can produce self-bias in substrate, but for additive method, must apply extra voltage and can produce substrate bias in substrate.
Through after the schedule time, described plasma is closed.The Desired Height that forms little line on magnetic head is depended in the setting of time.
Next, the delivery pallet is moved to plating silicon chamber 110 by mechanical arm 104, there, plates one deck silicon by sputtering method (sputtering) on the matrix surface of magnetic head.
Then, described delivery pallet is transplanted in a-C:H (hydrogeneous diamond like carbon) or ta-C (diamond like carbon of the tetrahedron of no hydrogen (tetrahedral carbon)) the plating chamber 112 by mechanical arm 104, there, the magnetic head matrix surface is coated with the diamond like carbon carbon-coating (DLC layer) that one deck has expectation thickness.
The key factor that influences plasma etching process comprises the type of handling gas, pressure, etch voltage and the etching period of process chamber.The present invention is used for the etching gas of plasma etching process according to Al
2O
3Can be the mixed gas of oxygen, argon gas or oxygen and inert gas with the ratio of TiC.In the present invention, oxygen is to Al
2O
3Etch-rate very fast, then slower to the etch-rate of TiC.Described processing gas flow speed is controlled to reach desired pressure by mass flow controller (MFC), and the working pressure of process chamber described here is made as 1.0Pa.
Being used for power supply of the present invention can adjust according to described equipment, and it can produce plasma and provide bias voltage on processed magnetic head in plasma etching process.In one embodiment of the invention, described magnetic head is applied in the DC auto-bias of a 300V.The purpose that forms bias voltage is the physical etch of carrying out the oxygen domination.
Etching period is decided according to the expectation bench height of little line.Usually, if the bench height of little line requires to about 4nm, etching period should be decided to be about 5 minutes.
As improvement to above-mentioned processing procedure, newly-increased step: the magnetic head that has had ABS pattern (Pattern) on it is handled and changed its original ABS surfaceness.This newly-increased step is placed at magnetic head carries out after plasma etching chamber 108 backs and plasma etching chamber 108 are evacuated.Light plasma and etch away the original protective seam (overcoat) that is present on the magnetic head in the plasma etching chamber 108 of being pumped into vacuum, this protective seam comprises silicon layer and carbon (adamas) layer.Then, under the prerequisite of the vacuum state that does not destroy plasma etching chamber 108, aforementioned processing gas is introduced into plasma etching chamber 108, then handles gas etching magnetic head once more with this.Like this, form little line of expection on described magnetic head, it is coated with silicon and DLC subsequently.
Another example of the present invention is a said plasma etching above replacing with ion beam milling (IBE).The equipment of execution IBE technology as shown in Figure 4.The process that forms little line with ion beam etching method on the magnetic read/write magnetic head is as follows: at first, the delivery pallet of carrying magnetic stripe is inserted in the vacuum processing chamber 202, and will deliver pallet with product retaining means 204 and fix, described product retaining means 204 can tilt between 0 to 90 degree.Then, described vacuum processing chamber 202 is evacuated to predetermined pressure.
Next, handling gas, oxygen for example, perhaps the mixed gas of oxygen and inert gas is incorporated in first ion gun 206, and described ion gun 206 is separated by first gate 208 and product retaining means 204.Then, light neutralizing agent (neutralizer) and plasma in the ion gun 206.After a while, plasma has just settled out after lighting.
After plasma was stable, product retaining means 204 was tilted a predetermined angular, and gate 208 is opened, thereby allowed plasma bombardment to be fixed on magnetic head on the delivery pallet to carry out the prerinse to magnetic head.This moment, the internal pressure of process chamber was approximately 0.03-0.05Pa.
After after a while, gate 208 is closed once more, and the power supply of ion gun 206 and neutralizer also will be closed.Described process chamber 202 is evacuated once more, described delivery pallet tilts to another predetermined direction, and handle by second ion gun 210 and silicon target material 214, wherein, described second ion gun 210 is covered by second gate 212, and described silicon target material 214 is isolated by the 3rd gate 216 and product retaining means 204.Silicon layer is plated on the described magnetic head like this.
Then, described delivery pallet is tilted to adjust and gets back on the position of first ion gun 206, but current ion gun 206 used source gas are changed to C
2H
4, purpose is a plating C:H layer.The used processing time in this stage is depended on the expectation thickness and the rate of sedimentation of the C:H layer that plates.
Influencing the key factor that the ion etching method forms little line comprises: handle the type of gas, the incident angle of ion beam, etch voltage and etching period.The present invention is in order to make Al
2O
3Bigger selectance is arranged on TiC, and used processing gas is the mixed gas of oxygen, argon gas or oxygen and inert gas in ion beam milling technology.Consider the pole tip depression of magnetic head, just must regulate ion beam incident angle.For the pole tip form of adaptive expectation, the configuration of surface before pole tip material and the prerinse is the important consideration factor when adjusting incident angle.
Etch voltage can be regulated by the grid voltage that can form accelerating field, and radio-frequency power supply (radio-frequency (RF) power) can be regulated the ionization ratio in the ion gun.Optimum etch voltage is determined by required etch quantity, processing time, plasma degree of stability and static discharge damage (electrical static charge damaging).Etching period is then set by the Desired Height of little line and previous energy incident angle and is determined.
In the present invention, with reference to figure 5, described AlTiC surface through after the above-mentioned processing, forms one and has clearly little line of two rank (two-step) structure, and described little line comprises TiC 51 top steps and aluminium oxide 52 base frame rank.The height of described little line can be measured with atomic force microscope (AFM), and measured region area is 20 microns of 20 microns X, adopts leveling method (flatten method) to remove the influence of atomic force microscope cantilever arc (cantileverbow) here.
With reference to figure 5A, do not handle through technology of the present invention, on the AlTiC surface, just there are not clearly two stage structures.This is because through grinding, two kinds of hard materials that mechanical system is removed: aluminium oxide and titanium carbide have same clearance.And when using argon gas traditionally and removing surface contamination, have only very little selectance when removing the aluminium oxide on the titanium carbide.The invention provides a kind of little line, clearly illustrated two kinds of materials difference in height with clear two stage structures.Described bench height or little line height depend on the processing time.Through 20 seconds processing, the bench height of described little line can reach 2nm, ginseng Fig. 5 B; Through 40 seconds processing, the bench height of described little line can reach 3nm, ginseng Fig. 5 C; Through 60 seconds processing, the bench height of described little line can reach 4nm, ginseng Fig. 5 D.
Little line height can influence taking off (take-off) of magnetic read/write magnetic head and land (touch-down) performance.From following table, can be clear that this point.
| Project | Little line height (nm) | Landing (atm.) * | (atm.) takes off ** |
| 1 | ＜1 | 0.60 | 1.00 |
| 2 | 2 | 0.55 | 0.66 |
| 3 | 3 | 0.58 | 0.69 |
| 4 | 4 | 0.57 | 0.72 |
* landing (atm.): magnetic head can drop to the maximum pressure on the disk.
* takes off (atm.): the minimum pressure that magnetic head can take off from disk.
Lower value and landing have preferably stability with different magnetic heads that mean between taking off.
Among the present invention, described substrate is not limited to above-mentioned AlTiC, the mixture of two kinds of different materials: 64% Al
2O
3(aluminium oxide) and 36% TiC (titanium carbide).Here, Al
2O
3Be the bottom material, TiC is island second phase (island-like second phase).The particle size of AlTiC is about 1 micron.When the particle size of AlTiC changed, little line of the present invention forms technology can obtain essentially identical effect, and only the density of island second phase is different, shown in Fig. 5 E.
Above disclosed only is the preferred embodiments of the present invention, can not limit the present invention's interest field certainly with this, and therefore the equivalent variations of being done according to the present patent application claim still belongs to the scope that the present invention is contained.
Claims (20)
1. a method that forms little line on air-supported of magnetic read/write magnetic head is characterized in that comprising the following steps:
(a) plural magnetic head arrays is arranged in the pallet, each magnetic head comprises a pole tip up;
(b) described pallet is packed in the process chamber, and described process chamber is pumped into the vacuum with predetermined pressure;
(c) will contain oxygen processing gas imports in the described process chamber;
(d) described magnetic head is exposed in the etching means in the described processing gas and and carries out etching and form the little line that constitutes by a plurality of tangible two stage structures thereon its surface.
2. method according to claim 1 is characterized in that: also comprise the step of grinding described head surface before in step (a).
3. method according to claim 1 is characterized in that: also comprise the step that shields described magnetic head pole tip with the photoresist cover before in step (c).
4. method according to claim 1 is characterized in that: the roughness of described head surface after grinding is 0.2-04nm.
5. method according to claim 3 is characterized in that: described photoresist cover can be positive polarity photoresist cover or negative polarity photoresist cover.
6. method according to claim 3 is characterized in that: the thickness of described photoresist cover is between 1-20 μ m.
7. method according to claim 1 is characterized in that also being included in the step that described head surface forms air-supported pattern before in step (a), and the step of removing protective seam in step (b) afterwards.
8. method according to claim 1 is characterized in that: described etching means comprise plasma or ion beam.
9. method according to claim 8 is characterized in that: described plasma is
Direct capacitance coupled plasma or inductively coupled plasma.
10. method according to claim 8 is characterized in that: described plasma strengthens microwave source by electron cyclotron resonance and produces.
11. method according to claim 1 is characterized in that: described processing gas is purity oxygen.
12. method according to claim 1 is characterized in that: described processing gas is the mixed gas of oxygen and at least a inert gas.
13. method according to claim 1 is characterized in that: the height on described rank is from the 10-50 dust, and the distance on described adjacent rank is 0.2 μ m-3 μ m.
14. a formation has the method for the magnetic read/write magnetic head of little line, it is characterized in that comprising the following steps:
(a) plural magnetic head arrays is placed pallet, described each magnetic head all has a pole tip up;
(b) described pallet is inserted in the process chamber, and described process chamber is pumped into the vacuum with predetermined pressure;
(c) will contain oxygen processing gas imports in the described process chamber;
(d) described magnetic head is exposed in the etching means in the described processing gas and and carries out etching and form the little line that constitutes by a plurality of tangible two stage structures thereon its surface.
(e) applying silicon layer on etched surfaces; With
(f) coating diamond-like carbon-coating on described silicon layer.
15. a magnetic read/write magnetic head comprises air-supported with protective seam, it is characterized in that this protective seam has the little line that is made of a plurality of tangible two stage structures.
16. magnetic read/write magnetic head according to claim 15, it is characterized in that: described air-supported face is made with AlTiC, it comprises alumina base phase and microgranular titanium carbide second phase of implanting described alumina base phase, described titanium carbide protrudes from described alumina base phase mutually, thereby forms a step of top clearly that is different from the base frame rank of being defined mutually by described alumina base.
17. magnetic read/write magnetic head according to claim 15 is characterized in that: the height of described top step from the base frame rank is between the 10-50 dust.
18. magnetic read/write magnetic head according to claim 15 is characterized in that: the distance between the described adjacent protrusion top step is between the 0.2 μ m-3 μ m.
19. magnetic read/write magnetic head according to claim 15 is characterized in that: described protective seam comprises class diamond carbon-coating and is clipped in silicon layer between such diamond carbon-coating and the head surface.
20. magnetic read/write magnetic head according to claim 15 is characterized in that: described two stage structures are by forming with engraving method in containing oxygen processing gas.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005100969942A CN1925001B (en) | 2005-08-31 | 2005-08-31 | Magnetic read/write head with microtexture and method for producing same |
| JP2006234944A JP2007066505A (en) | 2005-08-31 | 2006-08-31 | Magnetic recording/reproducing slider having microstructure, and its method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005100969942A CN1925001B (en) | 2005-08-31 | 2005-08-31 | Magnetic read/write head with microtexture and method for producing same |
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| Publication Number | Publication Date |
|---|---|
| CN1925001A CN1925001A (en) | 2007-03-07 |
| CN1925001B true CN1925001B (en) | 2010-04-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005100969942A Expired - Fee Related CN1925001B (en) | 2005-08-31 | 2005-08-31 | Magnetic read/write head with microtexture and method for producing same |
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| Country | Link |
|---|---|
| JP (1) | JP2007066505A (en) |
| CN (1) | CN1925001B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1199828A (en) * | 1997-05-14 | 1998-11-25 | 国际商业机器公司 | Dual etch step process for air bearing design with three etch depths |
| CN1227385A (en) * | 1998-02-23 | 1999-09-01 | 富士通株式会社 | Flying head slider and recording disk apparatus |
| CN1232995A (en) * | 1998-04-23 | 1999-10-27 | 阿尔卑斯电气株式会社 | Image forming method |
| CN1543666A (en) * | 2001-08-20 | 2004-11-03 | 东京毅力科创株式会社 | Dry developing method |
-
2005
- 2005-08-31 CN CN2005100969942A patent/CN1925001B/en not_active Expired - Fee Related
-
2006
- 2006-08-31 JP JP2006234944A patent/JP2007066505A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1199828A (en) * | 1997-05-14 | 1998-11-25 | 国际商业机器公司 | Dual etch step process for air bearing design with three etch depths |
| CN1227385A (en) * | 1998-02-23 | 1999-09-01 | 富士通株式会社 | Flying head slider and recording disk apparatus |
| CN1232995A (en) * | 1998-04-23 | 1999-10-27 | 阿尔卑斯电气株式会社 | Image forming method |
| CN1543666A (en) * | 2001-08-20 | 2004-11-03 | 东京毅力科创株式会社 | Dry developing method |
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| Publication number | Publication date |
|---|---|
| CN1925001A (en) | 2007-03-07 |
| JP2007066505A (en) | 2007-03-15 |
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