CN1892445A - Semiconductor wafer processing method and edge-wafer residue removal system - Google Patents

Semiconductor wafer processing method and edge-wafer residue removal system Download PDF

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Publication number
CN1892445A
CN1892445A CNA2006100958745A CN200610095874A CN1892445A CN 1892445 A CN1892445 A CN 1892445A CN A2006100958745 A CNA2006100958745 A CN A2006100958745A CN 200610095874 A CN200610095874 A CN 200610095874A CN 1892445 A CN1892445 A CN 1892445A
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wafer
semiconductor wafer
edge
rotating speed
photo
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CN1892445B (en
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张庆裕
柯建州
游大庆
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Abstract

The invention provides a semiconductor wafer processing method and an edge-wafer residue removing system. The edge-wafer residue removing system is used together with a liquid immersion lithography process, comprising: a multi-speed motor for rotating a wafer suction cup and keeping the suction cup with a first rotate speed of more than 1500 rpm, a second rotate speed between 1000rpm to 1500 rpm and a third rotate speed of less than 1000rpm; and a first nozzle proximate to the wafer edge arranged on the suction cup for spraying solvent. The inventive semiconductor wafer processing method and edge-wafer residue removing system avoid contamination on a liquid immersion fluid and a lens caused by contact of photo etching agents residue and the lens immersed into the liquid immersion fluid, and also avoid contamination to the photo etching agents during an immersion lithography exposure process and also reduce defects formed on the wafer.

Description

The disposal route of semiconductor wafer and edge-wafer residue removal system
Technical field
The present invention is about a kind of manufacture method of semiconductor device, especially in regard to a kind of method and system of removing the photo-induced etching agent residue on Semiconductor substrate.
Background technology
Photoetching technique is that the pattern on the mask is projected substrate for example on the semiconductor wafer.In the semiconductor lithography technical field, must be under resolution limit or critical size, with the pattern characteristics minimized in size on the semiconductor wafer, present critical size reaches below the 65nm.
Immersion lithography technology (immersion lithography) is new technology in the photoetching technique, and its filling liquid between wafer surface and lens carries out step of exposure.Use the immersion lithography technology can make lens have aperture higher when in air, using, and then improve resolution.In addition, wet soaking more can be improved the depth of focus (depth-of-focus is DOF) to make less characteristic dimension.
The step of exposure of wet dipping type can be used deionized water or other wet exposure liquid that soaks that is fit between wafer and lens, though the time shutter is very short, but liquid contacts and can throw into question with light-sensitive layer (for example photo-induced etching agent), for example the photo-induced etching agent residue can soak exposure liquid and/or lens contact with wet, thereby pollute to wet and soak exposure liquid and/or lens, and on wafer, cause defective.
Therefore, industry is badly in need of a kind of immersion lithography technology that reduces above-mentioned immersion exposure liquid and/or lens contamination, and reduces the defective on the wafer.
Summary of the invention
In order to solve above-mentioned existing in prior technology problem, the invention provides a kind of disposal route of semiconductor wafer, comprising: form light-sensitive layer on semiconductor wafer to carry out wet photoetching process; Carry out edge-wafer residue and remove program, when rotating this semiconductor wafer, spray the front edge of first liquid to this semiconductor wafer in first distance with first rotating speed greater than 1500rpm; Be spin-dried for this semiconductor wafer; After being spin-dried for the step of this semiconductor wafer, toast this semiconductor wafer; After the step of this semiconductor wafer of baking, this light-sensitive layer exposes; This light-sensitive layer of postexposure bake; And after the step of this light-sensitive layer of postexposure bake, this light-sensitive layer develops.
It is a kind of according to the made semiconductor wafer of the disposal route of above-mentioned semiconductor wafer that the present invention also provides.
The present invention also provides a kind of method of immersion lithography, comprising: provide the photo-induced etching agent layer on semiconductor wafer; Carry out edge-wafer residue and remove step, comprise with first rotating speed and rotate this wafer, rotate this wafer, and spray a solvent towards the edge of this wafer when rotated with second rotating speed that is less than or equal to this first rotating speed greater than 1000rpm; And use immersion lithography exposure system this photo-induced etching agent layer that exposes.
The invention provides a kind of method of on semiconductor wafer, carrying out wet photoetching process, comprising: provide the photo-induced etching agent layer on semiconductor wafer; Carry out the crystal edge photo-induced etching agent and clean to remove step, with rotating speed rotation wafer greater than 2000rpm, when wafer rotates via the nozzles spray solvent; Use immersion lithography exposure system this photo-induced etching agent layer that exposes.
The invention provides a kind of crystal edge photo-induced etching agent and remove step, comprising: the first rotation step, first rotating speed rotation wafer with greater than 1000rpm sprays solvent towards the wafer outer rim when rotation; The second rotation step to be less than or equal to second rotating speed rotation wafer of first rotating speed, is sprayed solvent towards the wafer outer rim when rotation; And the 3rd rotation step, to be less than or equal to the 3rd rotating speed rotation wafer of second rotating speed, when rotation, spray solvent towards the wafer outer rim.
The present invention also provides another kind of method of carrying out wet photoetching process on Semiconductor substrate, comprising: provide the photo-induced etching agent layer on Semiconductor substrate, this photo-induced etching agent layer is near the edge of substrate; (therefore TARC layer coat this photo-induced etching agent layer than the close edges of substrate of photo-induced etching agent layer for top anti-reflective coating, TARC) layer this photo-induced etching agent layer of covering to form the top anti-reflective coating; Carry out the crystal edge photo-induced etching agent and clean to remove that (edge-bead removal, EBR) program comprise with greater than the rotating speed rotation wafer of 1500pm the time, with the nozzles spray solvent; Use immersion lithography exposure system this photo-induced etching agent layer that exposes.
The present invention also provides a kind of crystal edge photo-induced etching agent that uses with wet photoetching process to clean the removal system, comprise: many rotating speeds motor, in order to the rotation chuck, this motor can make this sucker remain on first rotating speed greater than 1500rpm, second rotating speed is about 1000rpm, and the 3rd rotating speed is less than 1000rpm; And first nozzle, be disposed on the sucker, near the Waffer edge on the sucker, first nozzle is in order to spray solvent.
In one embodiment of the invention, first nozzle arrangement in different positions with at least two kinds of different rotating speeds of correspondence; Wherein first rotating speed of many rotating speeds motor is about 2500rpm, and second rotating speed is about 1000rpm, and the 3rd rotating speed is about 500rpm.
In another embodiment, crystal edge cleans the removal system and also comprises second nozzle, is disposed on the sucker, and near the Waffer edge on the sucker, second nozzle is in order to spray the side of solvent to wafer, and this side is the opposition side of the first nozzles spray solvent; When motor during at first rotating speed, first nozzle sprays solvent at the about 2.5mm of distance Waffer edge place; When motor during at second rotating speed, first and second nozzles spray solvent between distance Waffer edge 1.0～1.5mm; And when motor during at the 3rd rotating speed, first and second nozzles spray solvent at the about 1.0mm of distance Waffer edge place.
Described semiconductor crystal wafer disposal route of the present invention and edge-wafer residue removal system are before using the immersion lithography technology to expose, carry out edge-wafer residue and remove step, avoided contact with lens and polluting expose liquid and lens with the wet exposure liquid that soaks because of the photo-induced etching agent residue, also avoid photo-induced etching agent contaminated in exposure process, and reduced the defective that forms on the wafer.
For allow above-mentioned purpose of the present invention, feature, and advantage can become apparent, below in conjunction with accompanying drawing, elaborate.
Description of drawings
Fig. 1 is the process flow diagram that carries out the method for wet photoetching process, comprises edge-wafer residue removal program.
Fig. 2,7,8 and 9 is the sectional view of wafer right hand edge.
Fig. 3 is the side view of immersion lithography system.
Fig. 4 be among Fig. 1,4 and/or 5 wafer inspect figure, it has one or more defective.
Fig. 5 and 6 is the different step wafer rotation diagram of the employed EBR program of the embodiment of the invention.
Wherein, description of reference numerals is as follows:
100 wet photoetching process process flow diagrams;
102 coating photo-induced etching agent layers;
104 edge-wafer residues are removed (EBR) program;
106 wet photoetching process;
10 wafers;
12 substrates;
14 photo-induced etching agent layers;
16 bottom anti-reflectives coatings (BARC) layer;
18,18a, 18b, 18c top anti-reflective coating (TARC) layer;
19 wafer right hand edges;
20 immersion lithography systems;
22 lens combinations;
The 24 wet ends that soak;
26 wet immersion liquid;
28 openings;
30 platforms;
32 platform structures;
40 particulates;
50 defectives;
52 suckers;
54 motors;
60,62 nozzles.
Embodiment
See also Fig. 1, in order to the simplified flow chart of the embodiment of the wet photoetching process that reduces defective, with label 100 expressions.Step 102 is for forming light-sensitive layer on substrate.Substrate used herein can comprise that naked silicon wafer, thin layer pile up, polysilicon, silicon nitride, monox, low-k dielectric medium and/or conductive materials metal for example.
In one embodiment, light-sensitive layer is the photic etching agent layer of macromolecule, and its thickness is about 2500  with as 65nm photoetching technique usefulness, or thickness less than about 1800  to use as the 55nm photoetching technique.In embodiments of the present invention, using above-mentioned thickness is in order to cooperate the resolution of photoetching technique, with the required depth-width ratio of holding circuit geometric scheme.The thickness that reduces light-sensitive layer helps to reduce or prevention photo-induced etching agent pattern punctures when following step is for example developed or is spin-dried for.
The photo-induced etching agent layer can be bottom anti-reflective coating (bottom anti-reflective coating, BARC) layer, bottom macromolecule, contain the coating of polymeric silicon, silicon carbide-containing macromolecule, minus or eurymeric photo-induced etching agent, top anti-reflective (top anti-reflective coating, TARC) layer, oneself knows or the photo-induced etching agent material of exploitation later at present.For example the photo-induced etching agent layer can be photo-induced etching agent systems a kind of, two or more compositions.The photo-induced etching agent layer can use rotary coating or other method that is fit to coating, before coating photo-induced etching agent layer, can handle wafer earlier to prepare to carry out photoetching process, for example before coating photo-induced etching agent layer, cleaning earlier, drying crystal wafer and/or coating are sticked together promoter on wafer.
In embodiments of the present invention, the BARC layer is arranged at earlier on the wafer before the photo-induced etching agent coating, and the TARC layer is arranged on the wafer after the photo-induced etching agent coating.The BARC layer has the height greater than about 50 , makes that coating thickness is even and reaches the reflectivity of wanting.TARC also has the height greater than about 50 , makes coating thickness even.
In step 104, carry out solvent washing to remove the photo-induced etching agent (being called edge-wafer residue (edge-bead)) of Waffer edge, this step can avoid photo-induced etching agent contaminated in exposure process.A kind of traditional edge-wafer residue of (but non-be known technology) is removed (edge-bead removal known to this case inventor, EBR) technology comprises the parameter that following table 1 is listed, it is the technology of two steps, first step rotated wafer 5 seconds with 1000rpm, use two nozzles to spray solvent at distance Waffer edge 1.5mm place, the front of one of them spray wafer, another sprays the back side, the front is meant that wafer has the side of photo-induced etching agent, and the back side is meant its opposing face.
Table 1
Step Rotating speed (rpm) Time (second) Nozzle location (mm) Spray liquid
1 1000 5 1.5 The front and the back side
2 1000 5 - Do not have (being spin-dried for)
In step 106, carry out wet photoetching process, wafer and photo-induced etching agent layer (or other layer) are immersed in wet dipping type exposure liquid for example in the deionized water, and are exposed under the radiation source.Radiation source comprise ultraviolet light for example KrF (KrF, 248nm), argon fluoride (ArF, 193nm) or fluorine gas (F 2, excimer laser 157nm).The time shutter of wafer under radiation depended on employed photo-induced etching agent kind, ultraviolet ray intensity and/or other factors, and for example, the time shutter is about 0.2 second to 30 seconds.Carry out postexposure bake (PEB) after the exposure, make the macromolecule cracking, develop then and finish the photo-induced etching agent pattern.
See also Fig. 2, it is by the made wafer 10 of above-mentioned wet photoetching process 106.Wafer 10 comprises substrate 12 and light-sensitive layer 14.Substrate 12 can be one or more layers of structure, comprises polysilicon, metal and/or dielectric medium, will be patterned later on.Light-sensitive layer 14 can be the photo-induced etching agent layer, and it can be subjected to exposure to influence the generation pattern.
Wafer 10 comprises bottom anti-reflective coating (BARC) layer 16 and top anti-reflective coating (TARC) layer 18.The right hand edge 19 of Fig. 2 shows wafer 10, the left hand edge of wafer 10 also have the structure similar with right hand edge 19.As shown in Figure 2, on the wafer stagger mutually in the position of three-decker, and BARC layer 16 is than light-sensitive layer 14 more close Waffer edges 19, and light-sensitive layer is then than TARC layer 18 more close Waffer edge.
See also Fig. 3, after edge-wafer residue is removed (EBR) step, wafer 10 is placed immersion lithography system 20.Immersion lithography system comprise lens combination 22, wet soak end 24 be used for load bearing fluid 26 for example deionized water, a plurality of opening 28 be used for adding or removing liquid, platform 30 is used for fixing wafer 10, and wafer duplet lens system 22 is relatively moved.Platform 30 comprises that also structure 32 is used for load bearing fluid 26.In Fig. 3, lens combination 22 and wet soaking are held 24 positions that are placed near the right hand edge 19 of wafer 10, relatively move between lens 22 and the wafer 10, make that lens can be to 14 exposures of the photo-induced etching agent on the entire wafer.
See also Fig. 2 and Fig. 3, in above-mentioned traditional wet photoetching process, the mechanism that its defective produces is for when the section of photo-induced etching agent generation is not good, and the solable matter that comes from photo-induced etching agent 14 can form particulate 40, and it can have problems in technology after a while.In Fig. 2, there are two particulates 40 to keep to the side 19, particulate 40 comprises by photo-induced etching agent layer 14, BARC layer 16, TARC layer 18 or the formed solable matter of aforesaid combination.In Fig. 3, there are many particulates 40 to have more than near Waffer edge 19, also be dispersed throughout in the liquid 26.
The present application people's inference, above-mentioned defective is to stem from edge-wafer residue to remove (EBR) step, wafer is strong inadequately at the centrifugal force of 1000rpm (table 1 is listed) rotation, be not enough to remove the EBR solvent at photo-induced etching agent 14 edges, make the photo-induced etching agent 14 at Waffer edge still be immersed in the solvent, the result causes and is rich in the spongy of solvent.In some cases, this can make the photo-induced etching agent edge become soft, is rotated easily when wafer is spin-dried for and removes, and will further be stripped from the technology of this photo-induced etching agent after exposure.Though this can not throw into question in dry lithography technology, in immersion lithography system 20 (Fig. 3), liquid 26 and/or lens 22 can be polluted by particulate 40, and can make the defective on the wafer increase.
Consult Fig. 4, it is the wafer 10 after process traditional E BR technology and the wet photoetching process.Wafer 10 is included in the defective 50 that produces in the above-mentioned technology, this defective is caused by the particulate among Fig. 2-3 40, in photo-induced etching agent, have the existence of particulate and/or distortion, or show on the photo-induced etching agent with pattern of voids (lacking the pattern that falls), even the defective of other kind also may occur.
Consult Fig. 5, upward form in order to reduce and/or to avoid particulate 40 in immersing liquid 26, to reach lens 22 (Fig. 3), and reduce the quantity of defects on wafers 50 (Fig. 4), the invention provides a kind of new EBR technology.New EBR technology is used the sucker 52 that is driven by motor 54, and one or more nozzle 60,62.Motor 54 can as following described relative high speed under rotating suction disc 52, and in certain embodiments, nozzle 60-62 can be adjusted to ad-hoc location along with motor rotary speed.
Table 2 is classified improved two stage E BR technologies (comparing with table 1) as, wherein in first step, motor 54 is with greater than the rotating speed rotating suction disc of 1000rpm (as 1500rpm) 52 about 5 seconds, two nozzles 60,62 spray solvent on the position of the about 1.5mm of distance Waffer edge, a front of spraying wafer 10, another sprays the back side.Solvent comprises propylene glycol monomethyl ether (Propylene glycol monomethylether, PGME), the propylene glycol monomethyl ether ester (propylene glycol monomethyl ether acetate, PGMEA), cyclohexanol (cyclohexanol), aqueous solution, interfacial activity agent solution or aforesaid combination.Many photo-induced etching agents all dissolve in aforesaid one or more solvent.The embodiment of the invention can increase the centrifugal force of edge-wafer residue, and can avoid becoming as spongy near the photo-induced etching agent of Waffer edge.After carrying out the step of table 2, can use the preceding baking program of exposure with densification photo-induced etching agent macromolecule and evaporating solvent.
Table 2
Step Rotating speed (rmp) Time (second) Nozzle location (mm) Spray liquid
1 ＞1000 5 1.5 The front and the back side
2 1000 5 - Do not have (being spin-dried for)
In another embodiment, via second kind of EBR technology, can further reduce or avoid particulate 40 in wet immersion fluid 26, to form.Table 3 is classified improved four-stage EBR technology as, and first step rotated wafer about 5 seconds with the rotating speed greater than 1000rpm, and nozzle 60 sprays the front of solvent at wafer 10 at the about 2.5mm of distance Waffer edge place; Second step was rotated wafer about 5 seconds with slower rotating speed (as 1000rpm), and nozzle 60,62 sprays front and the back side of solvent at wafer 10 at the about 1.5mm of distance Waffer edge place; Third step rotated wafer about 5 seconds with slower rotating speed (as 500rpm), and nozzle 60,62 sprays front and the back side of solvent at wafer 10 at the about 1.0mm of distance Waffer edge place.
Table 3
Step Rotating speed (rmp) Time (second) Nozzle location (mm) Spray liquid
1 2500 5 2.5 Positive
2 1000 5 1.5 The front and the back side
3 500 5 1.0 The front and the back side
4 1000 5 - Do not have (being spin-dried for)
The change of rotating speed and position can be avoided or reduce (bounce back) phenomenon of rebounding, and this phenomenon is because the photo-induced etching agent of removing is upspring by the wall of reaction chamber, and gets back to that wafer surface produces.After the step of first higher rotation speed, use lower rotating speed to come the clean wafer edge can remove edge-wafer residue.
Consult Fig. 6, in certain embodiments, nozzle 60,62 helps to remove the photo-induced etching agent edge-wafer residue with an angle of inclination, and/or reduces (bounce back) phenomenon of rebounding.
Consult Fig. 7-9, (compare with the embodiment of Fig. 2) in another embodiment, top anti-reflective coating (TARC) layer extends to above photo-induced etching agent layer 14, to reduce the possibility that the photo-induced etching agent particulate forms.In Fig. 7, the TARC layer represents that with digital 18a it covers photo-induced etching agent layer 14 and BARC layer 16 fully, and the edge 19 of TARC layer 18a and wafer 12 is in 5mm.In Fig. 8, the TARC layer represents that with digital 18b it covers photo-induced etching agent layer 14, but does not cover BARC layer 16, and BARC layer 16 is than the edge 19 of the close wafer 12 of other layer.In Fig. 9, the TARC layer is represented with digital 18c, it places on the photo-induced etching agent layer 14 but does not cover photo-induced etching agent layer 14 fully, photo-induced etching agent layer 14 is than the edge 19 of the close wafer 12 of TARC layer, the tackness of some TARC material and photo-induced etching agent layer is than good with the tackness of wafer, and Waffer edge thin layer as shown in Figure 9 piles up the TARC layer that can help avoid Waffer edge and peels off in the wet dipping type exposure technology.
Table 4 is another improved four-stage EBR technology, and its combination for various layers all has good effect, comprises above-mentioned TARC layer 18a and 18b.First step rotated wafer about 5 seconds with the rotating speed (as 2500rpm) greater than 1000rpm, nozzle 60 is at the about 1.5mm of distance Waffer edge place, spray solvent in the front of wafer 10, solvent comprises PGME, PGMEA, cyclohexanol, aqueous solution, interfacial activity agent solution or aforesaid combination.Second step was rotated wafer about 5 seconds with slower rotating speed (as 1000rpm), and nozzle 60,62 sprays front and the back side of solvent at wafer 10 at the about 1.0mm of distance Waffer edge place.Third step rotated wafer about 5 seconds with slower rotating speed (as 500rpm), and nozzle 60,62 sprays front and the back side of solvent at wafer 10 at the about 1.0mm of distance Waffer edge place.
Table 4
Step Rotating speed (rmp) Time (second) Nozzle location (mm) Spray liquid
1 2500 5 1.5 Positive
2 1000 5 1.0 The front and the back side
3 500 5 1.0 The front and the back side
4 1000 5 - Do not have (being spin-dried for)
Though the present invention has disclosed preferred embodiment; yet described embodiment is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; should make some changes and modification, so protection scope of the present invention should be with appended being as the criterion that claim was defined.

Claims (14)

1. the disposal route of a semiconductor wafer comprises:
On semiconductor wafer, form light-sensitive layer, to carry out wet photoetching process;
Carry out edge-wafer residue and remove program, when rotating this semiconductor wafer, spray the front edge of first liquid to this semiconductor wafer in first distance with first rotating speed greater than 1500rpm;
Be spin-dried for this semiconductor wafer;
After being spin-dried for the step of this semiconductor wafer, toast this semiconductor wafer;
After the step of this semiconductor wafer of baking, this light-sensitive layer exposes;
This light-sensitive layer of postexposure bake; And
After the step of this light-sensitive layer of postexposure bake, this light-sensitive layer develops.
2. the disposal route of semiconductor wafer as claimed in claim 1, spraying this first liquid to this front edge of this semiconductor wafer, and before being spin-dried for this semiconductor wafer, also comprise in regular turn: when rotating this semiconductor wafer, spray second liquid this front edge at the second distance place to this semiconductor wafer with second rotating speed; And when rotating this semiconductor wafer, spray the 3rd liquid this front edge to this semiconductor wafer in the 3rd distance with the 3rd rotating speed.
3. the disposal route of semiconductor wafer as claimed in claim 2, wherein this second rotating speed is less than or equal to this first rotating speed; And the 3rd rotating speed be less than or equal to this second rotating speed.
4. the disposal route of semiconductor wafer as claimed in claim 2, wherein this first liquid, second liquid and the 3rd liquid are independent separately, comprise propylene glycol monomethyl ether, propylene glycol monomethyl ether ester, cyclohexanol, aqueous solution, interfacial activity agent solution or aforesaid combination.
5. the disposal route of semiconductor wafer as claimed in claim 2, wherein this second distance is less than this first distance; And the 3rd the distance less than this second distance.
6. the disposal route of semiconductor wafer as claimed in claim 1, wherein the outer rim of this light-sensitive layer and this semiconductor wafer is in 5mm.
7. the disposal route of semiconductor wafer as claimed in claim 1 also is included in before this light-sensitive layer of formation, form bottom anti-reflective coating synusia on this semiconductor wafer, and the outer rim of this bottom anti-reflective coating layer and this semiconductor wafer is in 5mm.
8. the disposal route of semiconductor wafer as claimed in claim 1 also is included in after this light-sensitive layer of formation, form the top coating synusia on this semiconductor wafer, and the outer rim of this top coating layer and this semiconductor wafer is in 5mm.
9. semiconductor wafer, its disposal route by semiconductor wafer as claimed in claim 1 is made.
10. the method for an immersion lithography comprises:
Provide the photo-induced etching agent layer on semiconductor wafer;
Carry out edge-wafer residue and remove step, comprise with first rotating speed and rotate this wafer, rotate this wafer, and spray solvent towards the edge of this wafer when rotated with second rotating speed that is less than or equal to this first rotating speed greater than 1000rpm; And
Use immersion lithography exposure system this photo-induced etching agent layer that exposes.
11. an edge-wafer residue removal system, it uses with wet photoetching process, comprising:
Many rotating speeds motor, in order to the rotation chuck, this motor can make this sucker remain on first rotating speed greater than 1500rpm, and second rotating speed is approximately between 1500rpm and 1000rpm, and the 3rd rotating speed is less than 1000rpm; And
First nozzle is disposed on this sucker, and near the Waffer edge on this sucker, this first nozzle is in order to spray solvent.
12. edge-wafer residue removal system as claimed in claim 11, wherein this first nozzle arrangement in diverse location with at least two kinds of different rotating speeds that should sucker.
13. edge-wafer residue removal system as claimed in claim 11 also comprises:
Second nozzle is disposed on this sucker, and near the Waffer edge on this sucker, this second nozzle is in order to spray the side of solvent to this wafer, and this side is the opposition side of this first nozzles spray solvent.
14. edge-wafer residue removal system as claimed in claim 11, wherein when this motor during at this first rotating speed, this first nozzle is spraying solvent apart from the about 2.5mm of this Waffer edge place; When this motor during at this second rotating speed, described first and second nozzles spray solvent between apart from this Waffer edge 1.0～1.5mm; And when this motor during at the 3rd rotating speed, described first and second nozzles are spraying solvent apart from the about 1.0mm of this Waffer edge place.
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