CN1859001B - DC power slow start circuit - Google Patents
DC power slow start circuit Download PDFInfo
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- CN1859001B CN1859001B CN200610057942A CN200610057942A CN1859001B CN 1859001 B CN1859001 B CN 1859001B CN 200610057942 A CN200610057942 A CN 200610057942A CN 200610057942 A CN200610057942 A CN 200610057942A CN 1859001 B CN1859001 B CN 1859001B
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- transistor switch
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- power supply
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Abstract
A DC supply slugging circuit includes a transistor switch and a switch control circuit connected between the grating and the drain of the switch and connected with the input supply, said switch control circuit adjusts the character of the junction capacitance between the grating and the drain of the switch to be expressed as linearity so that the voltage of the source and drain changes in linearity, which can realize that the output slugging voltage changes in fixed tilted ratio and the change is controlled and the instant striking current can be controlled accurately.
Description
Technical field
The present invention relates to electronic technology field, especially relate to a kind of DC power slow start circuit.
Background technology
At present, along with the penetration and promotion of communication applications DPS (Di stributed Power System, distributed power supply system), DC power supply hot plug slow starting control circuit is used widely.Now, DC power slow start circuit is divided into discrete component circuit and two kinds in the circuit that adopts the integrated control chip of special-purpose hot plug according to the components and parts that adopt, be divided into 48V power supply (or other similar voltages) and two kinds of situations of low pressure (as 5V, 3.3V etc.) again according to the veneer input voltage, the polarity of power supply has just to be had negatively, so circuit also has nothing in common with each other.It realizes that functional purpose mainly comprises: the slow start-up control of anti-shake time-delay, voltage/current etc.
The power supply soft-start circuit of available technology adopting discrete component as shown in Figure 1, this circuit comprises a MOSFET (Metallic Oxide Semiconductor Field EffectTransistor, mos field effect transistor) M1,1, two resistance R 1 of a capacitor C and R2.When system switched on, the RC path that capacitor C 1 and resistance R 1, resistance R 2 constitute made MOSFET M1 have slow unlatching effect, and the gate source voltage Vgs of MOSFET M1 finally stabilizes to
This value makes the conducting resistance Ron of MOSFET M1 be reduced to minimum.
But the gate source voltage Vgs voltage waveform of MOSFET M1 is the RC charge waveforms, has non-linearly, and the slow starting resistor that causes exporting also is non-linear.When adopting Fig. 1 circuit, the drain voltage of MOSFETM1 and the waveform of drain current as shown in Figure 2, wherein A is the drain voltage waveform of MOSFET M1, B is the drain current waveform of MOSFET M1.With reference to Fig. 2, adopt this circuit to make slow starting current be not easy control.Further, adopt this circuit output end to be not suitable for using the load capacitance of Da Rong value, otherwise firing current can be excessive, therefore make the type selecting allowance of circuit fuse excessive.
Summary of the invention
The purpose of this invention is to provide a kind of DC power slow start circuit, be nonlinear defective to overcome the slow starting resistor of exporting in the prior art.
The present invention includes a transistor switch and an ON-OFF control circuit, ON-OFF control circuit is connected between the grid and drain electrode of transistor switch, and links to each other with the input power supply; Described ON-OFF control circuit is linear by the characteristic of junction capacitance between the grid leak of regulating described transistor switch, and makes described transistor switch drain-source voltage be linear change; Described ON-OFF control circuit further comprises: capacitive part, be connected in parallel between the grid and drain electrode of described transistor switch, and increase the capacitance of junction capacitance between the transistor switch grid leak, make the characteristic of this junction capacitance be linear; Active component is connected between the grid and input power supply of described transistor switch, and the drive current that makes the input power supply offer grid only offers junction capacitance between the transistor switch grid leak.
According to one aspect of the present invention, described transistor switch is a mos field effect transistor.
According to another aspect of the present invention, described capacitive part is one or more electric capacity combinations; Active component is one or more resistance combinations.
According to another aspect of the present invention, described DC power slow start circuit also comprises: two resistance, an electric capacity and a diode; Two resistance string connect together, and are connected then between the earth terminal of the source electrode of described transistor switch and input power supply, and the tie point between two resistance is connected with the negative electrode of diode; Electric capacity is connected in parallel between the negative electrode of the source electrode of described transistor switch and diode; The anode of diode connects the grid of described transistor switch.
According to another aspect of the present invention, described DC power slow start circuit also comprises: a resistance and an electric capacity; This resistance is in parallel with electric capacity, is connected then between the source electrode and grid of described transistor switch.
Compared with prior art, the present invention has the following advantages:
The present invention can realize that the slow starting resistor of exporting is the fixed linear slope variation, and change in voltage is controlled, can accurately control energising moment impact size of current, reaches the purpose of the slow starting current of accurate control.The present invention is not subjected to the parasitic capacitance properties influence of MOSFET, not influenced by the producer of MOSFET, the discreteness that batch difference is brought, and is convenient to the type selecting of fuse.
Description of drawings
Fig. 1 is the circuit diagram of a kind of power supply soft-start circuit of prior art.
Fig. 2 is when adopting Fig. 1 circuit, the drain voltage of MOSFET M1 and the oscillogram of drain current.
Fig. 3 is the circuit diagram of a kind of power supply soft-start circuit of the present invention.
Fig. 4 is when adopting circuit shown in Figure 3, the oscillogram of the drain-source voltage of MOSFET M1, gate source voltage and drain current.
Fig. 5 is the circuit diagram of a kind of power supply soft-start circuit of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail:
Adopt a kind of power supply soft-start circuit of the present invention as shown in Figure 3, this circuit comprises a MOSFET M1,1, one diode D1 of 31, one capacitor C of an ON-OFF control circuit, two resistance R 1 and R2.Wherein, ON-OFF control circuit 31 further comprises a capacitor C 3 and a resistance R 3.Capacitor C 3 is connected in parallel between the grid and drain electrode of MOSFET M1, and resistance R 3 is connected between the grid and input power supply of MOSFET M1.The input power supply of this circuit is-48V.
The characteristic that ON-OFF control circuit can be regulated junction capacitance Cgd between the M1 grid leak is linear, make Vgs platform effect occur, promptly after the value of Vgs is greater than threshold voltage Vgs (th), the value of Vgs is constant in a period of time, thereby drain-source voltage Vds is changed be the fixed linear slope variation, and Vds changes controlled, can accurately control energising moment impact size of current, satisfies protective tube type selecting demand.Because the capacitance of Cgd is smaller, remarkable for making this electric capacity influence effect to Vgs, the present invention has used capacitor C 3 and resistance R 3.C3 is connected in parallel between the grid and drain electrode of M1, increases the capacitance of Cgd, and the characteristic of regulating Cgd is linear; R3 is a high resistant, is connected between the grid and input power supply of M1, sees it is that a constant-current source drives with realization from the mos gate utmost point, thereby realize in the M1 opening process that the drive current that offers grid is only given Cgd, makes Vgs platform effect occur.
C1 prevents M1 the misleading of when energising, and plays the effect of anti-shake time-delay with R1, R2.D1 prevents that by C1 M1 from misleading when energising, and ends when resistance R 2 dividing potential drops are higher than the M1 grid voltage, is subjected to the influence of RC circuit charging voltage to prevent the M1 grid.
When adopting circuit shown in Figure 3, the waveform of the drain-source voltage of M1, gate source voltage and drain current as shown in Figure 4.Wherein A is the drain-source voltage Vds waveform of M1, the gate source voltage Vgs waveform that B is M1, the drain current Id waveform that C is M1.
With reference to Fig. 4, according to the characteristic of MOSFET, the MOSFET that is used for slow start-up control opens and can be divided into following four processes:
The T1-T2 stage: since gate drive current Ig between the grid source between junction capacitance Cgs and grid leak junction capacitance Cgd constantly charge, gate source voltage Vgs brings up to threshold voltage Vgs (th) from 0V. in this stage, MOSFET is in off state, and drain current Id is 0, and drain-source voltage Vds is-the 48V input voltage;
The T2-T3 stage: along with Vgs continues to raise, drain current Id increases to full-load current Io.In this stage, drain-source voltage Vds remains-the 48V input voltage.
The T3-T4 stage: in this stage, only by junction capacitance Cgd between grid leak, Vgs's gate drive current Ig remains unchanged, and MOSFET is operated in the saturation region, and drain current Id reaches full-load current.Along with the reduction of drain-source voltage Vds, MOSFET moves to ohm service area gradually.
After the T4: MOSFET is operated in ohmic region, and gate source voltage Vgs rises to final voltage Vg by the time constant.
The present invention realizes slow starting resistor Linear Control in the T3-T4 stage, reaches the purpose of the slow starting current of accurate control.With reference to the waveform of C among Fig. 4 as can be known, the drain current Id of MOSFET M1 is linear.
The present invention also can adopt power supply soft-start circuit as shown in Figure 5, and this circuit comprises a MOSFET M1,1, one resistance R 1 of 51, one capacitor C of an ON-OFF control circuit.Wherein, ON-OFF control circuit 51 further comprises a capacitor C 3 and a resistance R 3.Capacitor C 3 is connected in parallel between the grid and drain electrode of MOSFET M1, and resistance R 3 is connected between the grid and input power supply of MOSFET M1.The input power supply of this circuit is-48V.
The above only is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1. a DC power slow start circuit is characterized in that, comprising: a transistor switch and an ON-OFF control circuit; ON-OFF control circuit is connected between the grid and drain electrode of transistor switch, and links to each other with the input power supply; Described ON-OFF control circuit is linear by the characteristic of junction capacitance between the grid leak of regulating described transistor switch, and makes described transistor switch drain-source voltage be linear change;
Described ON-OFF control circuit further comprises:
Capacitive part is connected in parallel between the grid and drain electrode of described transistor switch, increases the capacitance of junction capacitance between the transistor switch grid leak, makes the characteristic of this junction capacitance be linear;
Active component is connected between the grid and input power supply of described transistor switch, and the drive current that makes the input power supply offer grid only offers junction capacitance between the transistor switch grid leak.
2. DC power slow start circuit according to claim 1 is characterized in that described transistor switch is a mos field effect transistor.
3. DC power slow start circuit according to claim 1 is characterized in that, described capacitive part is one or more electric capacity combinations; Described active component is one or more resistance combinations.
4. DC power slow start circuit according to claim 1 is characterized in that, also comprises: two resistance, an electric capacity and a diode; Two resistance string connect together, and are connected then between the earth terminal of the source electrode of described transistor switch and input power supply, and the tie point between two resistance is connected with the negative electrode of diode; Electric capacity is connected in parallel between the negative electrode of the source electrode of described transistor switch and diode; The anode of diode connects the grid of described transistor switch.
5. DC power slow start circuit according to claim 1 is characterized in that, also comprises: a resistance and an electric capacity; This resistance is in parallel with electric capacity, is connected then between the source electrode and grid of described transistor switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610057942A CN1859001B (en) | 2006-03-01 | 2006-03-01 | DC power slow start circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610057942A CN1859001B (en) | 2006-03-01 | 2006-03-01 | DC power slow start circuit |
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| Publication Number | Publication Date |
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| CN1859001A CN1859001A (en) | 2006-11-08 |
| CN1859001B true CN1859001B (en) | 2010-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200610057942A Expired - Fee Related CN1859001B (en) | 2006-03-01 | 2006-03-01 | DC power slow start circuit |
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Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101324797B (en) * | 2007-06-15 | 2010-06-02 | 中茂电子(深圳)有限公司 | Electronic load device and circuit thereof |
| CN101114826B (en) * | 2007-07-23 | 2011-05-11 | 中兴通讯股份有限公司 | Power source relaxed starter |
| CN101714813B (en) * | 2009-12-15 | 2012-06-06 | 天水华天微电子股份有限公司 | Soft start circuit of switch power supply |
| CN101954893A (en) * | 2010-10-14 | 2011-01-26 | 上海中科深江电动车辆有限公司 | Soft-start device of electromobile |
| CN102570785B (en) * | 2010-12-30 | 2014-11-05 | 中兴通讯股份有限公司 | Direct-current power supply hot plug slow starting control circuit and control method |
| CN102196074A (en) * | 2011-05-20 | 2011-09-21 | 惠州Tcl移动通信有限公司 | Anti-surge charging mobile terminal |
| CN103441660B (en) * | 2013-03-06 | 2018-02-13 | 上海斐讯数据通信技术有限公司 | A kind of DC power slow start circuit of gateway device |
| CN104377949B (en) | 2013-08-16 | 2019-11-12 | 中兴通讯股份有限公司 | Switching rectifier starts control method and its device |
| WO2015143716A1 (en) * | 2014-03-28 | 2015-10-01 | 奇点新源国际技术开发(北京)有限公司 | Information converter power supply circuit, system, and power supply method |
| CN105207461B (en) * | 2015-09-16 | 2018-12-25 | 杭州华为数字技术有限公司 | A kind of control system that having delayed circuit, control method and control device |
| CN105490515B (en) * | 2016-01-11 | 2018-02-23 | 中国电子科技集团公司第十研究所 | Start-up circuit with nF level capacitive loads |
| CN106787667A (en) * | 2017-02-07 | 2017-05-31 | 北京百卓网络技术有限公司 | Switching Power Supply soft-start circuit and control method |
| CN110668336B (en) * | 2019-09-30 | 2020-12-01 | 萧县威辰机电工程设备有限公司 | High-altitude operation device based on low-speed starter |
| CN111092546A (en) * | 2019-12-26 | 2020-05-01 | 杭州电子科技大学 | Surge suppression slow starting circuit for supporting hot plugging |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5041889A (en) * | 1989-03-16 | 1991-08-20 | Siemens Aktiengesellschaft | Monolithically integratable transistor circuit for limiting transient positive high voltages, such as ESD pulses caused by electrostatic discharges on electric conductors |
| US5376831A (en) * | 1993-09-24 | 1994-12-27 | International Business Machines Corporation | Power switch circuit providing linear voltage rise |
| CN1421761A (en) * | 2001-11-23 | 2003-06-04 | 华邦电子股份有限公司 | Initiate circuit for power supply of peripheral elements |
-
2006
- 2006-03-01 CN CN200610057942A patent/CN1859001B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5041889A (en) * | 1989-03-16 | 1991-08-20 | Siemens Aktiengesellschaft | Monolithically integratable transistor circuit for limiting transient positive high voltages, such as ESD pulses caused by electrostatic discharges on electric conductors |
| US5376831A (en) * | 1993-09-24 | 1994-12-27 | International Business Machines Corporation | Power switch circuit providing linear voltage rise |
| CN1421761A (en) * | 2001-11-23 | 2003-06-04 | 华邦电子股份有限公司 | Initiate circuit for power supply of peripheral elements |
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| Publication number | Publication date |
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| CN1859001A (en) | 2006-11-08 |
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Effective date of registration: 20141212 Address after: 518052, Guangdong, Shenzhen province Nanshan District Nanshan digital cultural industry base, east block, room 407-408 Patentee after: Liu Di Address before: 518129 Bantian HUAWEI headquarters office building, Longgang District, Guangdong, Shenzhen Patentee before: Huawei Technologies Co., Ltd. |
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Owner name: SHENZHEN SHANYIN TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: LIU DI Effective date: 20150525 |
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Effective date of registration: 20150525 Address after: 518000, room 134, 1107 Hua Sheng Road, Longhua New District new wave office, Shenzhen, Guangdong Patentee after: Shenzhen good technology Co., Ltd. Address before: 518052, Guangdong, Shenzhen province Nanshan District Nanshan digital cultural industry base, east block, room 407-408 Patentee before: Liu Di |
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