CN1825585A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN1825585A CN1825585A CNA200610058221XA CN200610058221A CN1825585A CN 1825585 A CN1825585 A CN 1825585A CN A200610058221X A CNA200610058221X A CN A200610058221XA CN 200610058221 A CN200610058221 A CN 200610058221A CN 1825585 A CN1825585 A CN 1825585A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15173—Fan-out arrangement of the internal vias in a single layer of the multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Abstract
Description
Claims (27)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005051556A JP4674850B2 (ja) | 2005-02-25 | 2005-02-25 | 半導体装置 |
JP051556/2005 | 2005-02-25 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010100023081A Division CN101777550B (zh) | 2005-02-25 | 2006-02-24 | 半导体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1825585A true CN1825585A (zh) | 2006-08-30 |
CN100593855C CN100593855C (zh) | 2010-03-10 |
Family
ID=36931312
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010100023081A Active CN101777550B (zh) | 2005-02-25 | 2006-02-24 | 半导体装置 |
CN200610058221A Active CN100593855C (zh) | 2005-02-25 | 2006-02-24 | 半导体装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010100023081A Active CN101777550B (zh) | 2005-02-25 | 2006-02-24 | 半导体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7745915B2 (zh) |
JP (1) | JP4674850B2 (zh) |
KR (1) | KR101203329B1 (zh) |
CN (2) | CN101777550B (zh) |
TW (1) | TWI411070B (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102630118A (zh) * | 2011-02-07 | 2012-08-08 | 索尼公司 | 层叠的布线板 |
CN102981781A (zh) * | 2012-10-15 | 2013-03-20 | 威盛电子股份有限公司 | 数据储存装置、储存介质控制器与控制方法 |
CN104103627A (zh) * | 2013-04-09 | 2014-10-15 | 瑞萨电子株式会社 | 半导体器件以及互连基板 |
CN104346281A (zh) * | 2013-08-09 | 2015-02-11 | 瑞萨电子株式会社 | 电子装置 |
CN106409332A (zh) * | 2015-07-29 | 2017-02-15 | 瑞萨电子株式会社 | 电子器件 |
CN106407135A (zh) * | 2015-07-28 | 2017-02-15 | 瑞萨电子株式会社 | 电子装置 |
CN106716633A (zh) * | 2014-09-26 | 2017-05-24 | 瑞萨电子株式会社 | 电子器件及半导体器件 |
CN104241241B (zh) * | 2013-06-20 | 2017-06-09 | 揖斐电株式会社 | 封装基板和封装基板的制造方法 |
CN109887529A (zh) * | 2019-03-19 | 2019-06-14 | 济南德欧雅安全技术有限公司 | 一种共享电阻器的多芯片计算机存储设备 |
CN113314487A (zh) * | 2020-02-27 | 2021-08-27 | 精工爱普生株式会社 | 半导体装置 |
Families Citing this family (61)
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JP4745697B2 (ja) * | 2005-03-29 | 2011-08-10 | 富士通セミコンダクター株式会社 | 複数の配線層を有する半導体回路の端子層設定方法、端子層設定プログラム、配線端子延長処理プログラム、および、その端子層を設定に用いられる端子延長用コンポーネント |
KR100852187B1 (ko) | 2007-01-25 | 2008-08-13 | 삼성전자주식회사 | 효과적인 시스템 인 패키지 구성을 위한 핀 구성 변경 회로 |
KR101257912B1 (ko) | 2007-02-14 | 2013-04-24 | 삼성전자주식회사 | 반도체 메모리 장치와 이 장치의 단자 배치 방법, 및 이장치를 구비한 메모리 모듈과 이 모듈의 기판의 단자 및라인 배치 방법 |
JP5137179B2 (ja) | 2007-03-30 | 2013-02-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7872346B1 (en) * | 2007-12-03 | 2011-01-18 | Xilinx, Inc. | Power plane and land pad feature to prevent human metal electrostatic discharge damage |
US20090199277A1 (en) * | 2008-01-31 | 2009-08-06 | Norman James M | Credential arrangement in single-sign-on environment |
JP5197080B2 (ja) * | 2008-03-19 | 2013-05-15 | ルネサスエレクトロニクス株式会社 | 半導体装置及びデータプロセッサ |
JP5378693B2 (ja) * | 2008-03-24 | 2013-12-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2010093109A (ja) | 2008-10-09 | 2010-04-22 | Renesas Technology Corp | 半導体装置、半導体装置の製造方法および半導体モジュールの製造方法 |
WO2011027186A1 (zh) * | 2009-09-02 | 2011-03-10 | 先进封装技术私人有限公司 | 封装结构 |
TWI427756B (zh) * | 2009-09-08 | 2014-02-21 | Advanpack Solutions Pte Ltd | 封裝結構 |
JP2011124549A (ja) * | 2009-11-11 | 2011-06-23 | Canon Inc | 半導体装置 |
US8102042B2 (en) * | 2009-12-03 | 2012-01-24 | International Business Machines Corporation | Reducing plating stub reflections in a chip package using resistive coupling |
KR101744756B1 (ko) * | 2010-06-08 | 2017-06-09 | 삼성전자 주식회사 | 반도체 패키지 |
JP5396415B2 (ja) | 2011-02-23 | 2014-01-22 | 株式会社東芝 | 半導体装置 |
US8823165B2 (en) | 2011-07-12 | 2014-09-02 | Invensas Corporation | Memory module in a package |
US8659142B2 (en) | 2011-10-03 | 2014-02-25 | Invensas Corporation | Stub minimization for wirebond assemblies without windows |
US8436477B2 (en) | 2011-10-03 | 2013-05-07 | Invensas Corporation | Stub minimization using duplicate sets of signal terminals in assemblies without wirebonds to package substrate |
US8659141B2 (en) * | 2011-10-03 | 2014-02-25 | Invensas Corporation | Stub minimization using duplicate sets of terminals for wirebond assemblies without windows |
KR20140085497A (ko) | 2011-10-03 | 2014-07-07 | 인벤사스 코포레이션 | 직교 윈도가 있는 멀티-다이 와이어본드 어셈블리를 위한 스터브 최소화 |
US8610260B2 (en) | 2011-10-03 | 2013-12-17 | Invensas Corporation | Stub minimization for assemblies without wirebonds to package substrate |
TWI480990B (zh) * | 2011-11-15 | 2015-04-11 | Xintec Inc | 晶片封裝體及其形成方法 |
US9557370B2 (en) * | 2012-02-10 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of improving bump allocation for semiconductor devices and semiconductor devices with improved bump allocation |
TWI489444B (zh) | 2012-07-17 | 2015-06-21 | Etron Technology Inc | 應用於嵌入式顯示埠的動態隨機存取記憶體 |
CN102800644B (zh) * | 2012-09-05 | 2014-12-24 | 无锡江南计算技术研究所 | Ddr信号布线封装基板以及ddr信号布线封装方法 |
JP6058336B2 (ja) | 2012-09-28 | 2017-01-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6058349B2 (ja) * | 2012-10-24 | 2017-01-11 | ルネサスエレクトロニクス株式会社 | 電子装置及び半導体装置 |
KR102032887B1 (ko) * | 2012-12-10 | 2019-10-16 | 삼성전자 주식회사 | 반도체 패키지 및 반도체 패키지의 라우팅 방법 |
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US9443758B2 (en) | 2013-12-11 | 2016-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Connecting techniques for stacked CMOS devices |
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US10043755B2 (en) | 2015-06-26 | 2018-08-07 | Renesas Electronics Corporation | Electronic device |
US9484080B1 (en) | 2015-11-09 | 2016-11-01 | Invensas Corporation | High-bandwidth memory application with controlled impedance loading |
JP6669547B2 (ja) * | 2016-03-23 | 2020-03-18 | 京セラ株式会社 | 配線基板 |
US9955605B2 (en) * | 2016-03-30 | 2018-04-24 | Intel Corporation | Hardware interface with space-efficient cell pattern |
US9679613B1 (en) | 2016-05-06 | 2017-06-13 | Invensas Corporation | TFD I/O partition for high-speed, high-density applications |
JP2018056228A (ja) * | 2016-09-27 | 2018-04-05 | ルネサスエレクトロニクス株式会社 | 半導体装置、システムインパッケージ、及び車載用システムインパッケージ |
CN106776420A (zh) * | 2016-11-11 | 2017-05-31 | 郑州云海信息技术有限公司 | 一种提升ddr信号传输质量的主板结构 |
JP6253824B2 (ja) * | 2017-03-01 | 2017-12-27 | 東芝メモリ株式会社 | 半導体記憶装置 |
US10455691B1 (en) * | 2017-03-28 | 2019-10-22 | Juniper Networks, Inc. | Grid array pattern for crosstalk reduction |
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- 2006-02-24 KR KR1020060018211A patent/KR101203329B1/ko active IP Right Grant
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TW200731487A (en) | 2007-08-16 |
CN101777550B (zh) | 2012-01-11 |
CN100593855C (zh) | 2010-03-10 |
US20060192282A1 (en) | 2006-08-31 |
CN101777550A (zh) | 2010-07-14 |
JP4674850B2 (ja) | 2011-04-20 |
KR101203329B1 (ko) | 2012-11-20 |
TWI411070B (zh) | 2013-10-01 |
JP2006237385A (ja) | 2006-09-07 |
US7745915B2 (en) | 2010-06-29 |
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