CN1821438A - Sputtering apparatus and sputter film deposition method - Google Patents

Sputtering apparatus and sputter film deposition method Download PDF

Info

Publication number
CN1821438A
CN1821438A CN 200610059588 CN200610059588A CN1821438A CN 1821438 A CN1821438 A CN 1821438A CN 200610059588 CN200610059588 CN 200610059588 CN 200610059588 A CN200610059588 A CN 200610059588A CN 1821438 A CN1821438 A CN 1821438A
Authority
CN
China
Prior art keywords
light
film
magnetron
target
substrate
Prior art date
Application number
CN 200610059588
Other languages
Chinese (zh)
Other versions
CN100545301C (en
Inventor
志堂寺荣治
安藤英一
山田朋广
真下尚洋
Original Assignee
旭硝子株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2001-31004 priority Critical
Priority to JP2001031004 priority
Priority to JP2001-220942 priority
Priority to JP2001-383069 priority
Application filed by 旭硝子株式会社 filed Critical 旭硝子株式会社
Priority to CN02804597.1 priority
Publication of CN1821438A publication Critical patent/CN1821438A/en
Application granted granted Critical
Publication of CN100545301C publication Critical patent/CN100545301C/en

Links

Abstract

本发明的溅射装置及溅射成膜方法,是在腔室内设置基板保持架的转盘型溅射装置中,对于形成低折射率膜的应用及形成高折射率膜的应用可分别同时设置常用磁控管及AC磁控管,用AC磁控管成膜达到设计膜厚的90%,然后仅用常用的磁控管成膜,这样能够进行高精度的膜厚控制,生产率高。 Sputtering the sputter deposition apparatus and method of the present invention, the turntable is disposed in a chamber type substrate holder of a sputtering apparatus, the application form for application of the low refractive index film and the high refractive index film is formed may be used are simultaneously provided magnetron and AC magnetron, AC magnetron deposition by up to 90% of the thickness of the design, and then only the usual magnetron deposition, so that the film thickness control can be performed with high precision, and high productivity.

Description

溅射装置及溅射成膜方法 Sputtering a sputtering apparatus and film forming method

本申请是申请日为2002年2月6日、申请号为02804597.1、发明名称为“溅射装置及溅射成膜方法”的专利申请的分案申请。 This application is filed on February 6, 2002, Application No. 02804597.1, a divisional application entitled "sputtering a sputtering apparatus and film forming method" patent application.

技术领域 FIELD

本发明涉及适用于光学滤光器等成膜工序的溅射装置及溅射成膜方法,特别涉及适用于制造WDM(Wavelength Division Multiplexing,波分复用)技术所用的WDM用滤光片的溅射装置及溅射成膜方法。 Sputtering the sputter deposition apparatus and method of the present invention relates to a process suitable for forming an optical filter or the like, particularly suitable for the production relates to WDM (Wavelength Division Multiplexing, WDM) technique used with sputtering WDM filter sputter deposition apparatus and method for shot.

背景技术 Background technique

在日本专利特开平3-253568号公报中揭示了在玻璃板等基板上进行成膜用的转盘型溅射装置。 It discloses a carousel type sputtering apparatus for film formation on a substrate such as a glass plate in Japanese Patent Laid-Open Publication No. 3-253568 in. 转盘型溅射装置是旋转式间歇型的溅射装置,具有下述的结构,即在腔室内配置多边柱形的基板保持架(旋转鼓),同时在腔室壁内侧发置保持有矩形靶的磁控管。 Dial-type sputtering apparatus is a rotary batch-type sputtering apparatus having the following configuration, i.e. the configuration of the substrate holder polygonal column (rotating drum) in a chamber while maintaining a rectangular target hair placed inside the chamber wall magnetron. 一面使安装了基板的基板保持架旋转,一面对磁控管供给功率,使得靶的上面产生等离子,同时向腔室内引入规定的反应气体,通过这样进行成膜。 One surface of the substrate holder of the substrate is mounted is rotated, the face of a magnetron power supply, such that above the target ion and the like, while introducing a predetermined gas into the reaction chamber, forming a film by this.

另外,根据日本专利特开平11-241162号公报,提出了利用光学测量装置连续监视成膜中的膜厚进行溅射的方法。 Further, according to Japanese Patent Laid-Open Publication No. 11-241162, a method of using an optical film thickness measuring apparatus for continuously monitoring the film formation by sputtering.

近来,在光纤通信的领域中受到关注的WDM技术所用的WDM用滤光器,是将低折射率材料的膜(例如SiO2膜)与高折射率材料的膜(例如Ta2O5膜)交替组合,层叠非常多的层(例如100层左右)而形成。 Recently, attention in the field of optical fiber communication techniques used in WDM WDM optical filter, a low refractive index material film (e.g., SiO2 film) with a high refractive index material film (e.g., Ta2O5 film) combination alternately laminated very many layers (e.g., layer 100) is formed. 在制造这样的光学多层膜时,重要的是要按照设计值正确形成各层的膜厚,希望开发一种高速而且高精度进行成膜用的技术。 In manufacturing such an optical multilayer film, it is important to form the correct value in accordance with the design of the thickness of each layer, desired to develop a fast and accurate technique for film formation.

图27为以往的光学多层膜成膜用溅射装置的示意图。 FIG 27 is a schematic view of a conventional optical multilayer film with a sputtering apparatus. 在近似圆筒形腔室200内,配置多边筒形基板保持架202,在基板保持架202的各侧面安装基板204。 Within approximately cylindrical chamber 200 is disposed a cylindrical substrate holder 202 multilateral, holding each side of the holder 202 is mounted on substrate 204 the substrate. 在腔室壁内侧,设置低折射率膜形成用的磁控管溅射源206及高折射率膜形成用的磁控管溅射源208,前者装有低折射率膜形成用靶(例如Si靶)210,后者装有高折射率膜形成用靶(例如Ti靶)212。 Inside the chamber wall, a low refractive index film 206 and the magnetron sputter source with a high refractive index film is formed by magnetron sputtering source 208 is formed, the former is equipped with a low refractive index film formed of the target (e.g. Si target) 210, which is a target with a high refractive index film (e.g. Ti target) 212 is formed.

基板保持架202以中心轴214作为旋转中心进行旋转,从溅射电源216向磁控管溅射源206供给功率,通过这样在靶210的上面附近产生等离子,与从未图示的气体引入部分供给的气体进行反应,在通过靶210前的各基板204上形成低折射率膜。 The substrate holder 202 to rotate the center shaft 214 as a rotation center, is supplied from the sputtering power source 216 to the magnetron sputter power source 206, thus produced by the target 210 and the like in the vicinity of the above ions with the gas introduction portion (not shown) a reaction gas supplied, low refractive index film formed on each substrate 204 before the target 210. 同样,从溅射电源218向磁控管溅射源208供给功率,通过这样在靶212的上面产生等离子,与引入的气体进行反应,在各基板204上形成高折射率膜。 Similarly, the sputtering power supply 218 is supplied from the magnetron sputter power source 208, which is generated by the plasma above the target 212, a reaction gas is introduced, the high refractive index film is formed on each substrate 204. 预先调查溅射电源216及218的接通时间与成膜量的关系(成膜速度),然后一面管理溅射时间,一面对各磁控管溅射源206及208交替供给电源,通过这样形成所希望的多层膜。 Relationship investigated in advance and the ON time of the sputter power source 216 and the deposition amount of 218 (deposition rate), and the sputtering time management side, a face of each of the magnetron sputtering sources 206 and 208 are alternately supplied with power by this desired multilayer film is formed.

但是,上述以往的成膜装置存在的问题是难以进行高精度的膜厚管理,为了提供膜厚精度,必须相应降低成膜速度,生产率显著降低。 However, the presence of the above-described problems of the conventional film forming apparatus is difficult to manage the film thickness with high accuracy, in order to provide a film thickness accuracy, the deposition rate must be correspondingly reduced, productivity is significantly reduced.

日本专利特开昭49-115085号公报虽然没有有关转盘型溅射装置的描述,但提出一种方法,它是在成膜工序中,对溅射装置断续地供给能源,在能源断开期间(停止供给期间)测量膜厚,然后将该结果反馈给能源供给系统。 Japanese Patent Laid-Open Publication No. Sho 49-115085, although there is no description of the carousel type sputtering apparatus, but a method is proposed, which is the film formation step, energy is supplied intermittently to the sputtering apparatus, the energy during the OFF film thickness was measured (the supply stop period), then the result is fed back to the energy supply system. 但是,该方法的缺点是,成膜工序与测量工序交替进行,由于在测量中成膜中断,因此生产率差。 However, the disadvantage of this method is that the deposition step and the measurement step are alternately carried out, since deposition measurement interrupt, the productivity is poor.

另外,如日本专利特开平3-253568号公报所述,在采用两个阴极及对该阴极供给功率用的两个电源的溅射装置(方法)中,在力图实现膜厚均匀的情况下,由于两个阴极成对地成膜,因此对于影响成膜速度的主要因素(磁场、所加的电压、靶表面的状态及气压等),必须减小两个阴极之间的差别。 Further, as described in Japanese Patent Laid-Open No. 3-253568 bulletin, and employing two cathode sputtering apparatus (method) of the two power supplied to the cathode of the power used in the case of trying to achieve a uniform thickness, Since the two pairs forming a cathode, and therefore for the main factors affecting the deposition rate (the magnetic field, the applied voltage, the state of the target surface, and pressure, etc.), you must reduce the difference between the two cathodes. 但是,很难使两个阴极有关的条件一致,结果不容易控制膜厚的均匀。 However, it is difficult to make consistent condition related to two cathodes, the result is not easy to control the uniformity of the film thickness.

本发明正是鉴于这样的情况而进行的,目的在于提供能够以高精度控制膜厚而且生产率高的溅射装置及溅射成膜方法。 The present invention was made in view of such circumstances, and the object is to provide a film thickness can be controlled with high precision and a sputtering apparatus and a method for producing a high sputter deposition. 另外,目的在于提供比原来能够更简单达到膜厚均匀、而且能够实现装置小型化及低成本的溅射装置及溅射成膜方法。 Another object is to provide a simpler than the original can be reached with a uniform thickness, and downsizing and cost means of a sputtering apparatus and the sputtering film forming method can be realized.

发明内容 SUMMARY

为了达到前述目的,本申请第1方面所述的转盘型溅射装置,所述转盘型溅射装置具有下述构造,即在腔室内设置自由旋转的横截面为多边形或圆形的鼓,在该鼓的外周表面上设置基板保持架,在腔室壁的内侧配置磁控管溅射源,所述磁控管溅射源由靶及保持该靶的磁控管部分构成,所述靶利用所述磁控管部分保持,使其与所述鼓的转轴平行,该溅射装置具有在成膜中测量装在所述基板保持架的基板上形成的膜的膜厚的膜厚测量装置、对所述靶供给溅射所需要的功率的电源单元、以及利用所述膜厚测量装置得到的测量结果来控制影响成膜量的参数的控制装置。 To achieve the foregoing object, the present application carousel type sputtering apparatus according to a first aspect, the carousel type sputtering apparatus has a structure, i.e. a polygonal or circular cross-section drum rotatably disposed in the chamber, in is provided on an outer circumferential surface of the drum substrate holder, the magnetron sputtering source arranged inside the chamber walls, the magnetron sputtering source is a magnetron target and the holding portion constitutes the target, the target using the the magnetron holding portion to be parallel with the shaft of the drum, the sputtering apparatus having a film thickness measurement apparatus measuring a film thickness in the film formation substrate mounted on the substrate holder is formed, supplying power required for sputtering the target power supply unit, and a measurement result obtained by said film thickness measuring means to control means for controlling the amount of influence the deposition parameters.

根据本发明,在转盘型溅射装置中,能够在成膜中监视膜厚,将该信息反馈至控制系统,然后进行控制。 According to the present invention, the dial-type sputtering apparatus, the film thickness in the film formation can be monitored, the feedback information to the control system, and control. 作为影响成膜量的参数的控制,除了溅射电源的功率控制以外,还有基板保持架(鼓)的转速、挡板开度、溅射压力等的控制。 Effect of the amount of deposition as a control parameter, in addition to controlling the sputtering power supply, and a control substrate holder (drum) speed, the opening degree of the shutter, sputtering pressure or the like. 例如,在停止成膜时,要停止供给溅射电源的功率或关闭挡板等。 For example, when the film formation is stopped, to stop the supply of power or the sputtering power of the shutter is closed and the like.

作为本申请第2方面所述的溅射装置,包括以规定频率交替切换相邻配置的两个靶的阳极/阴极关系的AC型磁控管溅射源、以及单一磁控管部分上安装靶的磁控管溅射源。 As a sputtering apparatus according to the second aspect of the application, the target mounting portion comprises two targets at a predetermined frequency switch alternately arranged adjacent anode / cathode relationship between the AC magnetron sputtering source, a magnetron and a single the magnetron sputtering source.

作为“单一磁控管部分上安装靶的磁控管溅射源”,除了DC(直流)型磁控管溅射源以外,还有RF(高频)型磁控管溅射源及脉冲型(以一定时间间隔加上直流电压)型磁控管溅射源等。 As the "magnetron sputtering source mounted on a single magnetron target portion", in addition to the DC (direct current) magnetron sputtering source, and RF (radio frequency) magnetron sputtering source and a pulse type (a time interval plus DC voltage) magnetron sputtering source and the like.

AC型磁控管溅射源与单一磁控管部分上安装靶的磁控管溅射源相比,能够高速成膜。 AC magnetron sputtering source compared to magnetron sputtering source portion is mounted on a single magnetron target, high speed film formation. 本发明正是同时采用这两种溅射源,来实现高速而且高精度成膜。 The present invention is employed both sputter sources at the same time, to achieve a fast and accurate film.

在这种情况下,如本申请第3方面所述,具有下述的控制形态,即从成膜开始利用所述AC型磁控管溅射源进行高速成膜,在成膜达到目标膜厚前一定量之后,则停止利用所述AC型磁控管溅射源进行成膜,切换成仅利用所述单一磁控管部分上安装靶的磁控管溅射源的低速成膜,进行成膜直到所述目标膜厚为止。 In this case, as the third aspect of the present application, the following form of a control, i.e., beginning with the film formation from the AC magnetron sputtering source for high-speed film formation, the film formation to achieve the desired film thickness after a certain amount before, stop using the AC magnetron sputtering source for deposition, the deposition is switched to the low speed only by magnetron sputtering source portion is mounted on the single magnetron target, to be the film until the desired film thickness. 通过这样的控制,能够进行高精度的膜厚控制。 , Film thickness control can be performed with high accuracy such control.

再有,如本申请第4方面所述,最好是进行下述控制的形态,即在所述低速成膜中,利用所述膜厚测量装置监视膜厚,在检测出膜厚到达所述目标膜厚的时刻,停止利用所述单一磁控管部分上安装靶的磁控管溅射源进行成膜。 Further, as a fourth aspect of the present application, the following control is preferably carried out in the form, i.e., in the low-speed film formation, the film thickness monitor using a film thickness measurement apparatus, the detected film thickness reaches time desired film thickness, and stop using the magnetron sputter source target mounted on a single magnetron forming part. 并且,通常是在成膜中始终监视膜厚。 And, usually in a thickness of film formation is always monitored.

在仅使用单一磁控管部分上安装靶的磁控管溅射源进行低速成膜期间,对膜厚进行监视,将其信息反馈给控制系统,通过这样能够以更高精度控制膜厚。 During low-speed film formation using only a magnetron sputter source is mounted on a single magnetron target portion, the film thickness monitor, the feedback to the control system which, through such a film thickness can be controlled with higher precision.

本申请第5方面所述的转盘型溅射装置,所述转盘型溅射装置具有下述构造,即在腔室内设置自由旋转的横截面为多边形或圆形的鼓,在该鼓的外周表面上设置基板保持架,在腔室壁的内侧配置由靶及保持该靶的磁控管部分构成的磁控管溅射源,所述靶利用所述磁控管部分保持,使其与所述鼓的转轴平行,该溅射装置仅具有以规定频率相互切换相邻配置的两个靶的阳极/阴极关系的AC型磁控管溅射源作为所述磁控管溅射源,同时具有膜厚测量装置在成膜中一面使所述鼓旋转一面测量装在所述基板保持架的基板上形成的膜的膜厚、对所述靶供给溅射所需要的功率的电源单元、以及利用所述膜厚测量装置得到的测量结果来控制影响成膜量的参数的控制装置。 Dial-type sputtering apparatus according to a fifth aspect of the application, the carousel type sputtering apparatus has a configuration, in cross section, i.e. the chamber is rotatably disposed polygonal or circular drum, the outer circumferential surface of the drum in provided on the substrate holder, the magnetron sputtering source arranged inside the chamber wall formed of a magnetron target and the holding portion of the target, the target portion remains with the magnetron, so that the the drum rotation axis is parallel to, the sputtering apparatus having a predetermined frequency only the switching between the two targets disposed adjacent to the anode / cathode relationship between the AC magnetron sputtering source, as the magnetron sputtering source, while a membrane thickness measuring device in the film forming one side of the drum while rotating the measured thickness of the substrate mounted on a substrate holder for forming a film, the power supply unit supplying power to said sputtering target required, and the use of the measurement results obtained by said film thickness measurement apparatus control means for controlling the amount of influence the deposition parameters.

在形成要求膜厚误差为1%数量级的层叠膜时,仅使用高速AC型磁控管,就能够形成满足要求的膜。 When forming the laminated film of claim 1% of a thickness of the order of magnitude error, only the high-speed AC magnetron, a film can be formed to meet the requirements.

在将本发明用于制造WDM用滤光器所用的光学多层膜成膜装置等那样交替地形成低折射率膜及高折射率膜用的装置时,如本申请第6方面所述,采用具有同时设置装有低折射率膜成膜用靶的低折射率膜形成用的磁控管溅射源、以及装有高折射率膜成膜用靶的高折射率膜形成用的磁控管溅射源的构造的溅射装置。 When the present invention for producing a low refractive index are alternately formed WDM optical film and the multilayer film optical filter device or the like used as a high refractive index film device, as the sixth aspect of the present application, the use of while the magnetron is provided having a low refractive index film with magnetron sputter deposition source for forming a low refractive index film of the target, and a high refractive index film with a high refractive index film formation target is formed by a sputtering apparatus configured to sputter source.

关于低折射率膜形成用的磁控管溅射源及高折射率膜形成用的磁控管溅射源的各溅射源,通过分别利用AC型磁控管溅射源及单一磁控管部分上装有靶的磁控管溅射源组合而构成,从而在低折射率膜的成膜工序及高折射率膜的成膜工序中,能够实现高速成膜及高精度控制成膜。 About magnetron sputter source with a high refractive index film and the low refractive index film is formed by magnetron sputtering source each of the sputter sources are formed, respectively, by using the AC magnetron sputtering source and a single magnetron magnetron sputtering source with a target constituted of a combination of an upper portion, whereby the film formation step of forming the low refractive index film and the high refractive index film process, capable of high speed and high-precision control of the deposition film.

当然,根据要求的膜厚精度,也可以是仅使用AC型磁控管进行成膜的形态。 Of course, based on the thickness required precision, may be used only AC magnetron morphological film formation.

根据本申请第7方面所述的形态,所述膜厚测量装置具有对所述基板照射测量光的投光装置、以及接受照射所述基板的所述测量光的透射光或反射光后输出与该受光量相应的电信号的受光装置,在所述的鼓旋转中,通过从所述投光装置向所述基板照射测量光,进行所述膜厚的测量。 According to a seventh aspect of the present application according to the film thickness measurement apparatus includes a light emitting means for irradiating measurement light to the substrate, and the substrate is irradiated with the measurement light reflected or transmitted light of the light output receiving the electrical signal corresponding to the amount of light the light receiving means, said rotating drum by irradiating measurement light to the substrate, the film thickness is measured from the light projecting means.

本形态有关的膜厚测量装置不是直接测量膜厚,而是测量间接的信息。 Film thickness measurement apparatus of the present aspect is not directly related to film thickness was measured, but an indirect measurement information. 即膜厚测量装置由投光装置及受光装置构成,受光装置输出与接受的光量相应的电信号。 I.e., film thickness measurement apparatus of the light-emitting device and a light receiving device configuration, the electrical signal output of the light receiving means receiving an amount of light corresponding to. 测量光采用例如550nm的单色测量光或比其波长要短的549nm的单色测量光。 Measured using a monochromatic light, for example, measuring light of 550nm wavelength is shorter than the measuring monochromatic light of 549nm or. 但不限于从投光装置照射单色测量光的形态,也有的形态是投光装置照射白色(未选择波长)测量光,在受光侧形成单色光。 But not limited to morphometry monochromatic light from the irradiation light projecting means, and some form is irradiated with white light projector means (non-selected wavelengths) measuring light, monochromatic light is formed on the light receiving side.

如本申请第8方面所示,从受光装置输出的电信号(受光信号)送至运算装置,利用运算装置计算透射率信息或反射率信息。 As shown in the eighth aspect of the present application, the electrical signal (signal light) of the light outputted to the arithmetic means receiving, by the arithmetic means calculates the transmittance information or reflectance information. 运算装置根据需要,可以包含在膜厚测量装置内,也可以包含在控制装置内。 Calculating means required, may be included in the film thickness measurement apparatus may be included in the control device.

根据本申请第9方面所述的形态,所述运算装置根据所述测量光的入射角为0°及包含0°附近的规定角度范围时从所述受光装置得到的受光信号,求得与入射角相应的透射率或反射率,取得表示入射角与透射率或反射率的关系的数据。 According to the ninth aspect of the present application according to the arithmetic means in accordance with the incident angle of measuring light from the light receiving signal obtained by the light receiving device at 0 ° and containing a predetermined angle range around 0 °, the incident determined angle corresponding transmittance or reflectance, the incident angle and the data relationships transmittance or reflectance achieved FIG.

在转盘型溅射装置中,由于基板保持架旋转,因此在膜厚测量用的投光装置及受光装置固定设置在规定位置的情况下,测量光的入射角始终在变化。 In the carousel type sputtering apparatus, since the rotation of the substrate holder, and therefore the light projecting means and the film thickness measurement with an incident angle of a light receiving device provided in a case where a predetermined fixed position, the measuring light is always changing. 计算垂直入射时(入射角为0°)其前后的规定角度范围内的1点或多点受光信号,求得透射率或反射率相对于入射角的关系。 Calculating vertical incidence (incidence angle is 0 °) 1 or more points within a predetermined angular range before and after the light receiving signal obtained by transmittance or reflectance with respect to the relationship between the angle of incidence.

利用表示这样得到的入射角与透射率或反射率的关系的外形(表示相对于入射角的透射率或反射率变化的曲线),能够准确决定成膜的终点等。 Represents the incident angle by using the relationship between the shape and the transmittance or reflectance of the thus obtained (expressed with respect to transmittance or reflectance changes in the angle of incidence of the curve), we can accurately determine the end point of the film formation and the like. 例如通过比较计算的外形与具有目标光学特性的产品已有的外形,或利用实时跟踪计算的外形的形状变化等方法,能够决定成膜的终点。 For example, by comparing the calculated product having a target shape and optical characteristics of an existing profile, or calculated using the real-time tracking of the outline shape change or the like, the end of film formation can be determined.

另外,作为本发明发其它形态,有如本申请第10方面所述的形态,所述膜厚测量装置具有对所述基板能够有选择地照射波长不同的多种测量光的投光装置、以及接受照射所述基板的所述测量光的透射光或反射光后变换为与该受光量相应的电信号的受光装置,在所述鼓的旋转中,通过从所述投光装置向所述基板照射测量光,进行所述膜厚的测量。 Further, the present inventors have other forms, like the form of the tenth aspect of the present application, the film thickness measurement apparatus includes a light emitting device is capable of selectively different illumination wavelengths plurality of measurement light to the substrate and to receive irradiating the measuring light after the substrate transmitted light or reflected light into the light receiving device receiving the electrical signal corresponding to the amount of light, the rotation of the drum by irradiation from the light projecting means onto the substrate measurement light, the measurement of the film thickness. 例如,有选择地切换使用550nm与549nm的测量光。 For example, selectively switch between the measurement light of 550nm and 549nm.

如本申请第11方面所述,从受光装置输出的电信号(受光信号)送至运算装置,利用运算装置计算相对于所述波长不同的多种测量光的透射率信息或反射率信息。 As the eleventh aspect of the present application, the electrical signal (signal light) of the light receiving means is supplied to arithmetic unit output by arithmetic means for calculating relative transmittance of different wavelengths of the plurality of measuring light information or reflectance information.

根据本申请第12方面所述的形态,所述运算装置根据相对于所述波长不同的多种测量光,入射角分别为0°及包含0°附近的规定角度范围时从所述受光装置得到的受光信号,求得与入射角相应的透射率或反射率,取得表示入射角与透射率或反射率的关系的数据。 According to a first aspect of the present application according to aspect 12, said calculating means with respect to said plurality of different measurement light wavelength, angle of incidence of 0 ° and are obtained from said light receiving means when a predetermined angular range comprises 0 ° to near receiving the optical signal, corresponding to the angle of incidence is obtained in transmittance or reflectance, to obtain data indicating the relationship between the incident angle and the transmittance or reflectance.

再有,有如本申请第13方面所述的形态,所述运算装置根据所述取得的表示入射角与透射率或反射率的关系的数据,进行近似变换,计算出光谱透射率或光谱反射率。 Further, like the aspect of the thirteenth aspect of the present application, the data showing relationship between incident angle and the apparatus according to the transmittance or reflectance of the acquired operation, approximated transform, to calculate the spectral transmittance or spectral reflectance .

根据在规定角度范围得到的透射率或反射率的数据,利用将角度变换为波长而求得近似值的运算方法,能够求得波长比该测量波长要长的一侧的光谱透射率或光谱反射率。 The transmittance or reflectance data is obtained in a predetermined angular range by using the angle obtained by converting the wavelength approximation arithmetic method, it is possible to obtain a wavelength longer than the measuring wavelength side of the spectral transmittance or spectral reflectance . 通过利用波长不同的多种测量光测量透射率或反射率,能够进行精度更高的测量。 By measuring the light transmittance or reflectance measurements using a plurality of different wavelengths, the measurement can be performed with higher accuracy.

另外,在上述本发明的溅射装置中,还有一种理想的形态,其构成为具有根据用规定波长的单色测量光在其入射角在0°及包含0°附近的规定角度范围时从所述受光装置得到的受光信号,求得与入射角相应的透射率或反射率、取得表示入射角与透射率或反射率的关系的数据并将它形成曲线的第一测量功能;计算前述取得的表示入射角与透射率或反射率的关系的数据之平均值的第二测量功能;根据所述取得的表示入射角与透射率或反射率的关系的数据进行变换、计算光谱透射率或光谱反射率的第三测量功能;以及用波长比所述规定波长要短的一侧的测量光在其入射角在0°及包含0°附近的规定角度范围时从所述受光装置得到的受光信号求得与入射角相应的透射率或反射率、取得表示相对于入射角的透射率或入射率的关系的数据,并根据该取得的表示相对 Further, in the sputtering apparatus of the present invention, there is an ideal form, which is configured to light having its incident angle at 0 ° and containing a predetermined angle range around 0 ° measurement according to a predetermined monochromatic wavelength the light receiving device receiving optical signals obtained, corresponding to the angle of incidence is obtained transmittance or reflectance measurements to obtain a first data showing the relationship between incident angle and the transmittance or reflectance curves and it is formed; calculating the acquisition a second measurement function of the relationship between the average value of the incident angle and the data of transmittance or reflectance representation; is converted based on the data showing relationship between the incident angle and the transmittance or reflectance of the acquired or calculated spectral transmittance spectra the third reflectance measurement function; and a wavelength shorter than the predetermined wavelength side at an incident angle of the measuring light from the light receiving signal obtained by the light receiving means at a predetermined angle 0 ° and the range including the vicinity of 0 ° determined corresponding to the reflectance or transmittance of the incident angle, to obtain data representing the relative transmittance of incident angle of the incident or relationship, and based on the obtained representation of the relative 入射角的透射率或反射率的关系的数据进行近似变换,计算光谱透射率或光谱反射率的第四测量功能,在所述第一至第四测量功能中,根据成膜工序的阶段,相应切换所利用的测量功能或其组合。 Relationship data transmission or reflectance of the incident angle is approximated transform, to calculate the spectral transmittance or spectral reflectance fourth measurement functions in the first to fourth measurement function, according to the stage of the film formation step, the respective handover measurements utilized, or combinations thereof.

在制造光学多层膜时,由于相应于成膜过程的阶段,膜的光学性质发生变化,因此通过采用适合于各阶段的测量方法,能够力图提高测量精度及膜厚控制精度。 When producing an optical multilayer film, since the phase corresponding to the film formation process, the optical properties of the film change, and therefore by using the measuring method suitable for each stage can be tried to improve the measurement accuracy and precision control of film thickness.

根据本申请第14方面所示的形态,其特征在于所述膜厚测量装置设置在离开所述磁控管溅射源的位置。 According to a first aspect of the present application 14 illustrated aspect, wherein the location means is disposed away from the magnetron sputter source of the film thickness measurement. 所谓“离开的位置”,是指“以最接近受光装置的磁控管中心线(通过磁控管中心并与靶支持面垂直的线)与腔室外壁的交点作为基准,沿外壁表面上的周长在水平方向离开150mm以上、特别是900mm以上的位置”。 The "left position", means "closest to the center line by a magnetron (magnetron through the center of the target and perpendicular to the plane of the support line) of the light means and the outer wall of the chamber the intersection as a reference, along an outer wall surface in the horizontal direction away from the perimeter more than 150mm, 900mm or more particular positions. " 通过使测量部分离开成膜空间,能够减少因等离子光产生的干扰,能够进行高精度的测量。 By measuring portion away from the film forming space, reduce interference light generated by the ion and the like, can be measured with high accuracy.

再有,如本申请第15方面所示,附加包围所述测量光的透射光或反射光通过的光路周围的遮光筒(有遮光性的筒状体),通过这样能够遮住来自成膜空间的等离子散射光。 Further, as shown in the present application, an additional 15 surrounds the first aspect of the measurement optical path of transmitted light or reflected ambient light passes through the light-shielding tube (with a light-shielding tubular body), it can be blocked by this deposition space from plasma scattered light. 在这种情况下,最好如本申请第16方面所示,使所述腔室与所述遮光筒电气绝缘,形成漂游电位。 In this case, preferably, as in the first aspect of the present application shown in FIG 16, the cartridge chamber and the light-shielding electrical insulation, the potential drift is formed. 另外,还最好是如本申请第17方面所示的形态,即在所述遮光筒的前端部安装能减少因与所述基板之间的多重反射而引起的散射光的影响的防反射构件。 Further, also preferably be in the form as shown in the seventeenth aspect of the present application, i.e., the installation can be reduced due to the influence of multiple reflections of scattered light between the substrate and the antireflection caused at a front end portion of the shielding member cartridge .

利用这样的形态,能够大幅度减少因来自成膜空间的等离子光而引起的干扰,能够进行高精度的测量。 With such a shape, can be significantly reduced due to the interference from the film-forming space of the plasma caused by light, it can be measured with high accuracy.

本申请第18方面有关的溅射装置,具有以规定频率交替切换相邻配置的两个靶的阳极/阴极关系的AC型磁控管溅射源、单一磁控管部分上安装靶的磁控管溅射源、以及控制装置,所述控制装置进行控制,使得从成膜开始利用所述AC型磁控管溅射源进行高速成膜,在成膜达到目标膜厚前一定量之后停止利用所述AC型磁控管溅射源进行成膜,切换成仅利用所述在单一磁控管部分上安装靶的磁控管溅射源的低速成膜,进行成膜直到所述目标膜厚为止。 The sputtering apparatus 18 of the present application related aspects, the target having a predetermined frequency arranged alternately switching two adjacent anode / cathode relationship between the AC magnetron sputtering source, a magnetron on a single target magnetron mounting part sputtering source, and a control means, said control means performs control such that the deposition from the beginning using the AC magnetron sputtering source for high-speed film formation is stopped after a certain amount utilized to achieve the desired film thickness before the formation of the AC magnetron sputter deposition source is switched to the low-speed film formation using only the magnetron sputtering source mounted on a single magnetron target portion, until the target thickness of the deposition until.

本发明是同时使用AC型磁控管溅射源及在单一磁控管部分上安装靶的磁控管溅射源来实现高速成膜的,同时能够实现高精度的膜厚控制,特别理想的是适用于转盘型溅射装置。 The present invention simultaneously using the AC magnetron sputtering source and a magnetron sputter source target mounted on a single magnetron part on high speed film formation, and film thickness control with high accuracy can be realized, particularly preferably It is applied to the dial-type sputtering apparatus.

作为本发明的其它形态,是根据本申请第19方面所述的溅射装置,所述靶现在处于与所述基板对向的位置关系时,所述靶面具有规定的倾斜角度,使得所述基板对面的靶面相对于基板面不平行。 As another aspect of the present invention, a sputtering apparatus 19 of the present application according to the aspect, the target is now at an angle of inclination of the substrate when the positional relationship of the target surface having a predetermined, such that the the substrate opposite the target surface is not parallel to the substrate surface.

所谓“对向的位置关系”,意味着基板保持架的基板支持面的中心点与从该基板支持面来看的磁控管部分的中心点之距离为最小时。 The so-called "position to the relationship" meaning from the face frame holding the substrate support center point of the substrate and the substrate support from the central point of perspective for the most part magnetron hours. 另外,在AC型磁控管溅射源的情况下,将相邻配置的两个靶的中心点(将两个靶作为一个整体看作为一个磁控管部分时的中心点)解释为“磁控管部分的中心点”。 Further, in the case of an AC magnetron sputtering source, a configuration of the center point of two adjacent targets (two targets will look as a whole as a center point when the magnetron part) be interpreted as "magnetic Controls section of the center point. "

倾斜角度是根据安装靶的溅射装置的构成条件设计成最佳的角度。 The inclination angle is designed to be the best configuration angle according to the installation conditions of the target sputtering apparatus. 即,在膜厚形成均匀的角度范围内使靶面倾斜。 That is, the target film thickness is formed within the surface uniform inclination angle range. 通过采用这样的倾斜型靶,能够调整溅射原子的飞溅方向,同时能够调整旋转的基板与靶之间的距离及角度的关系等各种条件,实现沿基板的运动方向达到膜厚均匀。 By using such a tilt-type target, the sputtered atoms is possible to adjust the direction of splashing, while being able to adjust various conditions of the relationship between the distance and angle of rotation of the substrate and the target, to achieve the movement direction of the substrate to achieve uniform film thickness. 当然,也可以有一种形态是,在一个转盘型溅射装置中混合存在以往的平板型靶(常用靶)及本发明的倾斜型靶。 Of course, there may be a form is mixed conventional planar target (common target) and the tilt-type target of the present invention in a carousel-type sputtering apparatus.

本申请第20方面所述的发明提供的是与本申请第1方面有关的装置发明相对应的方法发明。 Application No. 20 This aspect of the invention is provided corresponding to the application associated with the present invention means a first aspect of the method of the invention. 即,本申请第20方面有关的方法,是采用转盘型溅射装置进行成膜的溅射成膜方法,所述转盘型装置具有下述构造。 A sputtering film-forming method i.e., the method of the present application relating to the twentieth aspect, is the use of dial-type sputtering apparatus for film formation, the turntable type apparatus has the following configuration. 即在腔室内设置自由旋转的横截面为多边形或圆形的鼓,在该鼓的外周表面上设置基板保持架,在腔室壁的内侧配置磁控管溅射源,所述磁控管溅射源由靶及保持该靶的磁控管部分构成,所述靶利用所述磁控管部分保持,使其与所述鼓的转轴平行,所述溅射成膜方法的特征在于,该方法包含在成膜中测量装在所述基板保持架的基板上形成的膜的膜厚的膜厚测量工序、以及利用所述膜厚测量工序得到的测量结果的信息来控制影响成膜量的参数的控制工序。 That is rotatably disposed in the cross-section of the chamber is polygonal or circular drum, the substrate holder disposed on an outer circumferential surface of the drum, a magnetron sputtering source arranged inside the chamber wall, said magnetron sputtering radiation source consists of a magnetron target and the holding portion of the target, the target portion remains with the magnetron, so that it is parallel with the shaft of the drum, the sputtering film formation method is characterized in that the method thickness measuring step includes measuring the deposition film forming apparatus in the substrate holder on the substrate film thickness, and film thickness measurements using the information of the measurement result obtained in the step of controlling the deposition parameters that affect the amount of the control step.

本申请第21方面所述的发明是提供与本申请第18方面有关的装置发明相对应的方法发明。 Application No. 21 This aspect of the invention is to provide a device of the invention related to the first aspect of the application 18 corresponding to the method of the invention. 即,本申请第21方面的方法,是采用溅射装置进行成膜的溅射成膜方法,所述溅射装置具有以规定频率交替切换相邻配置的2个靶的阳极/阴极关系的AC型磁控管溅射源、以及单一磁控管部分上安装靶的磁控管溅射源,所述溅射成膜方法的特征在于,该方法从成膜开始利用所述AC型磁控管溅射源进行高速成膜,在成膜达到目标膜厚前一定量之后停止利用所述AC型磁控管溅射源进行成膜,切换成仅利用所述在单一磁控管部分上安装靶的磁控管溅射源的低速成膜,进行成膜直到所述目标膜为止。 That is, the present application of the method aspect 21, is the use of a sputtering apparatus for forming a sputtering film forming method of a sputtering apparatus having a predetermined switching frequency alternately arranged adjacent to the two targets AC anode / cathode relationship magnetron sputtering source, a magnetron and a magnetron sputter source portion is mounted on a single target, the sputter deposition method is characterized in that the film formation method from the start using the AC magnetron sputter deposition source for high-speed, and stop using the AC magnetron sputtering source after the film formation before the formation of a certain amount to achieve the desired film thickness, only by switching to the mounting portion on a single target magnetron the magnetron sputtering source of low-speed film formation, the film formation until the target film.

在这种情况下,最好是如本申请第22方面所示的形态,即在成膜中测量膜厚,并利用所述测量中得到的信息来控制影响成膜量的参数。 In this case, as is best shown in the present application that the morphological section 22, i.e., a thickness measured in the film formation, and use the information obtained by the measurement to control the amount of influence the deposition parameters.

本申请第23至32方面所述的发明是提供分别与本申请第5及7乃至15方面有关的装置发明相对应的方法发明,本申请第33方面所述的发明是提供与本申请第19方面有关的装置发明相对应的方法发明。 The first aspect of the invention, 23 to 32 of the present application is to provide, respectively, about the first 15 5 and 7 and the apparatus aspect of the present invention corresponding to the application method of the invention, the invention of aspect 33 of the present application is to provide the present Application No. 19 corresponding to a related aspect of the apparatus of the invention the inventive method.

附图说明 BRIEF DESCRIPTION

图1所示为本发明实施形态有关的光学多层膜成膜用溅射装置构成的平面示意图。 1 a schematic plan view related to FIG form an optical multilayer film constituted by a sputtering apparatus embodiment of the present invention is shown.

图2为图1所示装置中使用的基板保持架的立体图。 FIG 2 is a view of a substrate used in the apparatus shown in perspective in FIG holding frame.

图3所示为本实施例的膜厚监视器信号曲线图的例子。 As shown in the present example of the film thickness monitor signal graphs of the embodiment of FIG.

图4所示为根据本实施例制成的带通滤光器的光谱特性曲线图。 Figure 4 is a graph illustrating the spectral characteristics of the band pass filter of the present embodiment is made of the embodiment.

图5为本发明其它实施形态有关的光学多层膜成膜用溅射装置的示意图。 FIG 5 is a schematic diagram relating to another embodiment of the optical multilayer film with a sputtering apparatus of the present invention.

图6表示图5示出的溅射装置附加防粘板的例子的示意图。 6 shows a schematic example of FIG. 5 shows an additional release sheet sputtering apparatus.

图7所示为各种阴极配置例子的示意图。 Figure 7 is a schematic configuration example of various cathode.

图8所示为本发明中主要使用的靶材及膜材料例子的图表。 Examples of film materials shown in the graph, and the target of the present invention is primarily used in FIG.

图9所示为本发明中使用的基板例子的图表。 Examples of the substrate shown in the graph of the present invention is used in FIG.

图10为本发明其它实施形态有关的光学多层膜成膜用溅射装置的构成图。 The optical multilayer film 10 related to configuration view of another embodiment of a sputtering apparatus of the present invention.

图11所示为利用卤素灯的膜厚监视系统的详细构成方框图。 Figure 11 shows the detailed configuration of a film thickness monitor using a system block diagram showing the halogen lamp.

图12所示为利用可变波长激光的膜厚监视系统的详细构成方框图。 As shown in a block diagram of a detailed configuration of a variable wavelength laser by using a film thickness monitoring system 12 of FIG.

图13为说明以往的转盘型溅射装置中膜厚分布不均匀性的示意图。 FIG 13 is a diagram of a conventional dial-type sputtering apparatus in a schematic view of the film thickness distribution unevenness.

图14(a)为本发明实施形态有关的靶的剖面图,(b)为其平面图。 FIG 14 (a) relating to the present embodiment cross-sectional view of the state of the target plan view thereof the invention, (b).

图15为说明倾斜形靶的作用的示意图。 FIG 15 is a schematic of the action of the inclined shape of the target FIG.

图16为比较利用图14所示的倾斜形靶进行成膜的膜厚分布与利用以往的平板形靶(常用靶)进行成膜的膜厚分布的曲线图。 FIG 16 is a comparison of the target by the inclined shape shown in FIG. 14 the deposition thickness distribution graph showing the film thickness distribution forming using a conventional flat plate-shaped target (common target).

图17为适用于高速成膜用溅射源的倾斜形靶的构成图。 FIG 17 is a block diagram for high-speed film formation by sputtering a target formed inclined source.

图18为比较利用图17所示的倾斜形靶进行成膜的膜厚分布与利用以往的平板形靶(常用靶)进行成膜的膜厚分布的曲线图。 FIG 18 is a comparison of the target by the inclined shape shown in FIG. 17 the deposition of the film thickness distribution graph showing the film thickness distribution and film-formed by conventional plate-shaped target (common target) is.

图19为适用于高速成膜用溅射源的倾斜形靶的其它构成例子示意图。 FIG 19 is a schematic configuration example applicable to other high-speed film-shaped inclined sputter source target.

图20所示为在玻璃基板上形成TiO2膜时的波长550nm的光透射率变化曲线图。 Light transmittance curve shown in FIG. 20 when a TiO2 film is formed on a glass substrate, a wavelength of 550nm.

图21所示为形成由玻璃/(TiO292.9nm/SiO257.3nm)7/TiO2185.8nm/(SiO257.3nm/TiO292.9nm)7的膜结构构成的29层单腔带通滤光器(中心波长为550nm)时的波长550nm测量光产生的透射率变化曲线图。 Figure 21 shows a single layer 29 formed of a glass /(TiO292.9nm/SiO257.3nm)7/TiO2185.8nm/(SiO257.3nm/TiO292.9nm)7 cavity film structure composed of a band pass filter (center measuring a wavelength of 550nm light transmittance variation graph is generated at a wavelength of 550nm).

图22所示为图21中的区间A在成膜中得到的透射率数据与角度的关系的曲线图。 Figure 22 is a graph showing the relationship between the transmittance data of the angle section A in FIG. 21 obtained in the film formation.

图23所示为图21中的第28层以后在成膜中测量的透射率与角度的关系的曲线图。 For the first layer 28 in FIG. 21 after the graph shown in FIG. 23 and the angular relationship between the transmittance measured in the film formation.

图24为用测量波长550nm、入射角在0°±10°的范围内取得的透射率曲线数据经近似变换得到的光谱透射率的曲线图。 FIG 24 is a graph showing a spectral transmittance measurement wavelength 550nm transmittance curve data acquired at the angle of incidence within the range 0 ° ± 10 ° is obtained by approximate transformation.

图25所示为用测量波长549nm、入射角在0°±10°的范围内取得的透射率曲线数据的曲线图。 FIG 25 shows a measurement wavelength of 549nm, the transmittance of the incident angle graph made in the range of 0 ° ± 10 ° of the curve data.

图26为将图25所示的数据进行近似变换而得到的光谱透射率的曲线图。 FIG 26 is a graph showing spectral transmittance obtained by approximate transformation of the data 25 shown in FIG.

图27所示为以往的光学多层膜成膜用溅射装置的构成示意图。 Figure 27 is a schematic view of a sputtering apparatus constituting a conventional optical multilayer film.

图28为基板保持架的平面图。 FIG 28 is a plan view of a substrate holder holding.

图29所示为基板保持架的其它形态的平面图。 FIG 29 is a plan view of another form of the substrate holding frame shown in FIG.

图30所示为本发明实施形态有关的光学多层膜成膜用溅射装置构成的平面示意图。 FIG 30 a schematic plan view related to the optical multilayer film form made of a sputtering apparatus shown embodiment of the present invention.

图31为沿图30的31-31线的剖面图。 FIG 31 is a sectional view along line 31-31 in FIG. 30.

图32为遮光筒的平面图。 FIG 32 is a plan view of the light-shielding tube.

图33为遮光筒的侧面图。 FIG 33 is a side view of the light-shielding tube.

图34所示为膜结构的概况及成膜方式的图表。 Figure 34 is a graph before the film structure and the film deposition mode.

图35为仅采用AC方式的磁控管的成膜装置筒图。 FIG 35 using only AC magnetron embodiment of cartridge film forming apparatus of FIG.

图36所示为膜特性评价结果的图表。 The evaluation results are shown in FIG. 36 is a graph film characteristics.

图37所示为光学多层膜要求的膜特性目标值的一览表。 FIG target characteristic of the optical multilayer film is a film required list 37 in FIG.

标号说明 DESCRIPTION OF SYMBOLS

10溅射装置,12腔室,14基板保持架,14基板保持架,14A测量用孔,16中心轴(转轴),17鼓,18基板,18A、18B监控对象基板,20磁控管溅射源(低折射率膜形成用磁控管溅射源),21磁控管部分,22电源,23常用磁控管,23A中心线,24、25磁控管部分,26交流电源,27AC磁控管,27A中心线,30磁控管溅射源(高折射率膜形成用磁控管溅射源)31磁控管部分,32电源,33常用磁控管,33A中心线,34、35磁控管部分,36交流电源,37AC磁控管,37A中心线,40卤素灯,41单色仪,42光纤,44投光头(膜厚测量装置),46受光头(膜厚测量装置),48受光处理单元,49控制放大器,50个人计算机(控制装置、运算装置),51CPU(控制装置、运算装置),52、53、54Ti靶,62、63、64Si靶,70溅射装置,72、74、76、78挡板,80防粘板,82反射型监视器的头,84斩光器,85光电倍增器,86灯电源,87分光装置,88光 Sputtering apparatus 10, the chamber 12, substrate holder 14, substrate holder 14, 14A measurement hole, the central axis 16 (spindle), the drum 17, the substrate 18, 18A, 18B monitored object substrate, magnetron sputtering 20 source (low refractive index film is formed by magnetron sputtering sources), a magnetron part 21, power supply 22, the magnetron 23 common, 23A centerline, the magnetron portion 24, 25, 26 AC power supply, 27AC magnetron tubes, 27A centerline, magnetron sputtering source 30 (high refractive index film is formed by magnetron sputtering sources) of the magnetron portion 31, power supply 32, the magnetron 33 common, 33A centerline, 34, 35 magnetically Controls portion, the AC power supply 36, 37AC magnetron, the center line. 37A, the halogen lamp 40, a monochromator 41, optical fibers 42, 44 projecting head (film thickness measurement apparatus), by the head 46 (film thickness measurement apparatus), 48 receiving optical processing unit, a control amplifier 49, the personal computer 50 (control means, computing means), 51CPU (control means, computing means), 52,53,54Ti target, 62,63,64Si target, a sputtering apparatus 70, 72, 74 , baffles 76, 78, the release plate 80, the first reflection-type monitor 82, chopper 84, a photomultiplier 85, a lamp power supply 86, the spectroscopic means 87, 88 light 二极管,90可变波长激光器,92靶,92A、92B靶倾斜面,92C棱线,94、95、96、97靶,96A、96B、97A、97B倾斜面,100溅射装置,120遮光筒,122支架,124支持管,126绝缘板,128绝缘套,130遮光盖,131孔,140成膜装置,142磁控管控制盘,151、152Ta靶,161、162Si靶,200腔室,202基板保持架,204基板,206低折射率膜形成用磁控管溅射源,208高折射率模形成用磁控管溅射源,210、212靶,214中心轴,216、218溅射电源。 A diode, a variable wavelength laser 90, a target 92, 92A, 92B inclined surface of the target, the ridge 92C, 94,95,96,97 target, 96A, 96B, 97A, 97B inclined surface, the sputtering apparatus 100, a light-shielding tube 120, bracket 122, support tube 124, the insulating plate 126, insulating sleeve 128, the light-shielding cover 130, the hole 131, the film forming apparatus 140, the control panel 142 of the magnetron, 151,152Ta target, 161,162Si target, the chamber 200, the substrate 202 holder, the substrate 204, the low refractive index film 206 is formed by magnetron sputtering source, a high refractive index mold 208 formed by magnetron sputtering source, a target 210, 212, the central axis 214, 216, 218, sputtering power source.

具体实施方式 Detailed ways

下面根据附图说明本发明溅射装置及溅射成膜方法的理想实施形态。 The following embodiment over the sputtering apparatus and the sputtering deposition process of the invention BRIEF DESCRIPTION.

图1所示为本发明实施形态有关的光学多层膜成膜用溅射装置构成的平面示意图。 1 a schematic plan view related to FIG form an optical multilayer film constituted by a sputtering apparatus embodiment of the present invention is shown. 图2为本装置中使用的基板保持架的立体图。 2 is the substrate used in the apparatus of FIG perspective view of the holding frame. 图1所示的溅射装置10是具有下述结构构成转盘型溅射装置,即在高1.5m、直径1.5m的圆筒形腔室12内,具有鼓(图1中未图示,图2中为标号17)及在该鼓17的外周表面上设置的基板保持架14,构成直径1m的正十二边形的各基板保持架14能够以鼓17的中心轴16为旋转中心进行旋转并支承住。 Sputtering apparatus 1 shown in FIG. 10 is a carousel-type sputtering apparatus has a structure configured, i.e., in the high 1.5m, 1.5m diameter of the cylindrical chamber 12, with the drum 1 (not shown) (FIG. FIG. cage retainer 142 as reference numeral 17) and is provided on an outer circumferential surface of the drum 17 of the substrate, constituting a diameter of 1m each substrate dodecagon shape 14 can be rotated to the central axis of the drum 17, 16 as a rotation center and support to live.

成为反应室的腔室12与未图示的抽气泵连接,能够得到溅射所需要的低压。 Become chamber 12 of the reaction chamber connected to a suction pump (not shown), can be obtained the desired low-pressure sputtering. 另外,在腔室12内还设置引入溅射所需要的气体用的供气装置及装料门,这在图中未图示。 Further, in the chamber 12 is also provided and introduced into the air supply means with the loading door of a sputtering gas required, which is not illustrated in the drawings. 另外,腔室12的内壁具有与鼓17隔开近似规定间隔而对向的形状(内圆形状)。 Further, the inner wall of chamber 12 having the shape of the (inner circular) spaced from the drum 17 is approximately a predetermined interval.

如图2所示,基板保持架14安装在圆筒形状的鼓17的外周表面,与设置的能够自由旋转的鼓17一起旋转。 2, the substrate holder 14 is mounted on the outer circumferential surface of the drum 17 is a cylindrical, rotatably arranged to rotate together with the drum 17. 另外,鼓17的形状不限于圆筒形,也可以是多边筒形(横截面是多边形)等。 Further, the shape of the drum 17 is not limited to a cylindrical shape, and may be polygonal tubular shape (a polygonal cross-section) and the like.

如图1所示,在基板保持架14上安装成膜用基板(例如是玻璃基板)18,基板保持架14随着利用未图示的旋转驱动装置驱动的鼓的旋转,以一定的转速(例如6rpm旋转。在腔室12的内侧分别设置低折射率膜形成用磁控管溅射源20及高折射率膜形成用磁控管溅射源30。这些磁控管溅射源20及30是高度方向的长度为1.2m的矩形磁控管溅射源,使基板18通过磁控管溅射源20或30的前面,成膜。 1, the mounting substrate holder 14 for film formation on a substrate (e.g. a glass substrate) 18, 14 by the rotation of the substrate holder with the rotation driving device (not shown) driving the drum at a constant speed ( such as a rotary 6rpm. low refractive index film is formed are disposed inside the chamber 12 by the magnetron sputtering source is formed by a magnetron sputtering source 30. a high refractive index film 20 and the magnetron sputtering sources 20 and 30 length height direction rectangular magnetron sputtering source of 1.2m, the substrate 18 by magnetron sputtering source in front, forming 20 or 30.

磁控管溅射源20是利用对单一磁控管部分21连接电源(在本例中,是供给矩形波的脉冲功率的DC电源)22的现有技术磁控管溅射源(下面称为常用磁控管)23、和对两个磁控管部分24及25连接一个交流电源26以规定频率交替切换阳极/阴极关系的交流型磁控管溅射源(下面称为AC磁控管)27的组合而构成。 Magnetron sputtering source 20 is a power supply section 21 is connected to a single magnetron (in the present embodiment, the pulse power supply is a DC power source the rectangular wave) prior art magnetron sputter source 22 (hereinafter referred to as conventional magnetron) 23, and an AC power supply connected to two magnetrons portions 24 and 25 26 at a predetermined switching frequency alternately anode / cathode relationship between the AC magnetron sputtering source (hereinafter referred to as AC magnetron) 27 to constitute the combination.

同样,磁控管溅射源30是利用对单一磁控管部分31连接电源32的常用磁控管33、和对两个磁控管部分34及35连接一个交流电源36的AC磁控管37的组合而构成。 Similarly, magnetron sputtering source 30 is connected by conventional magnetron 32 for a single power supply portion 31 of the magnetron 33 and the AC power supply connected to a magnetron 36 to 37 of portion 34 and two magnetrons 35 combination constituted.

AC磁控管27及37的动作原理已在日本专利特开平5-222530号、特开平5-222531号、特开平6-212421号及特开平10-130830号的各公报中予以揭示。 AC operation principle of the magnetron 27 and 37 have been in Japanese Unexamined Patent Publication No. 5-222530, JP-A No. 5-222531, JP Patent Laid-Open No. 6-212421 each and Laid-Open No. 10-130830 are disclosed to be. 简单来说,所谓AC磁控管是排列配置两个靶,一个靶为阴极时,另一个靶为阳极,以几十KHZ的频率切换阴极及阳极的磁控管装置,通过进行各种控制,能够稳定而且高速形成氧化物膜或氮化物膜。 Briefly, the so-called AC magnetrons are arranged two targets, when the target is a cathode and the other anode target at a frequency of several KHZ switching means magnetron cathode and the anode by performing various controls, capable of stable and high speed formation of an oxide film or a nitride film.

常用磁控管23及33与AC磁控管27及37相比,成膜速度低,但反之其优点是能够高精度控制膜厚。 Conventional magnetron 23 and 33 compared to the AC magnetrons 37 and 27, the deposition rate is low, but on the contrary the advantage that the film thickness can be controlled with high accuracy. 图1所示的溅射装置10,通过组合使用能够高速成膜的AC磁控管27及37和能够高精度控制膜厚的常用磁控管23及33,将实现高速成膜及高精度的膜厚控制。 Sputtering apparatus 10 shown in FIG. 1, capable of high speed film formation by using a combination of AC and 37 and the magnetron 27 can accurately control the film thickness of the conventional magnetron 23 and 33, to realize high-speed deposition and high-precision film thickness control.

另外,溅射装置10作为成膜中测量膜厚的装置(膜厚监视系统),具有卤素灯40、单色仪41、光纤42、投光头44、受光头46及受光处理单元48。 Further, the sputtering apparatus 10 as the film forming apparatus (film thickness monitoring system) measuring the thickness, having a halogen lamp 40, a monochromator 41, the optical fiber 42, the projecting head 44, the light-receiving head 46 and the processing unit 48. 来自卤素灯40的光利用单色仪41进行波长选择后,通过光纤42,引向投光头44。 After use of the light from the monochromator 41 performs wavelength selection halogen lamp 40 through the optical fiber 42, the optical head 44 toward the cast. 投光头44设置在基板保持架14的内侧(鼓17的内侧),从投光头44向旋转中的基板18照射光。 Projecting head holder 44 is provided inside (the inner drum 17) in the substrate holder 14, a substrate 18 irradiated with light from the rotating head 44 to the cast. 如图28所示,在基板保持架14的纵向中间部分形成沿旋转方向较长的光通过用的开口(测量用孔)14A。 As shown, is formed longer in the rotational direction by an opening with a light (measurement hole) 14A 28 in the longitudinal direction intermediate portion 14 of the substrate holder. 测量用孔14A的纵向长度形成为投射光的光点直径大致相同程度的大小(在本例中为30mm),光线通过该测量用孔14A,照射监视对象基板18A。 Measuring the diameter of a light spot formed projected light is substantially the same size with the longitudinal extent of the length of the hole 14A (in the present case 30mm), through which the light measurement hole 14A, the irradiation monitoring target substrate 18A. 测量用孔14A的长度方向的宽度越大,测量光的入射角范围越宽。 Measurement larger holes 14A longitudinal direction of width, the wider the range of the incident angle of measuring light. 另外,也可以是如图29所示的形态,即在测量用孔14A的部分安装膜厚测量专用的监视对象基板18B,来测量膜厚。 Further, the shape may be as shown in FIG. 29, i.e., in a dedicated measurement monitoring target substrate mounting part 18B with a film thickness of the hole 14A, to measure the film thickness.

在图1所示的腔室12的外侧,设置受光头46。 Outside the chamber 12 shown in FIG. 1, is provided by the head 46. 在腔室12的外壁设置将光引向受光头46的窗口(未图示)。 The outer wall of the chamber 12 is provided a window 46 of the light directed by the optical head (not shown). 透过基板18的光用受光头46接受,变换为与受光量相应的电信号后,送至受光处理单元48。 Light transmitted through the substrate 18 by the optical head 46 receives, after converted into an electric signal by the light quantity, to the light-receiving unit 48 by the processing. 受光处理单元48对接受的信号进行规定的信号处理,变换为计算机输入用的测量数据。 The signal processing unit 48 processing the optical signals received by the predetermined, measurement data is converted into the computer's input. 在受光处理单元48处理的测量数据50送至个人计算机。 In the light measurement data processing unit 48 to the personal computer 50 of the processing.

个人计算机50具有中央处理器(CPU),具有作为运算处理装置的功能,根据从受光处理单元48输入的测量数据,还具有作为控制各溅射电源(22、26、32、36)的控制装置的功能。 The personal computer 50 having a central processing unit (CPU), has a function as an arithmetic processing apparatus, according to the measurement data from the receiving input light processing unit 48 further includes a control means controlling the sputter power source (22,26,32,36) of function. 另外,可以利用个人计算机50进行卤素灯40的发光控制、基板保持架14的旋转控制、腔室12的压力控制、引入气体的供给控制及挡板(图1中未图示,图5中的标号72、74、76、78)的开闭控制等。 In addition, a personal computer 50 controls the light emission of the halogen lamp 40, the rotation control holding the substrate holder 14, the pressure control chamber 12, and the introduction of gas supply control baffle (not shown in FIG. 1, FIG 5 reference numeral 72,74,76,78) opening and closing control. 个人计算机50中装有各控制所需要的程序及各种数据。 With the respective control programs and various data required in the personal computer 50.

在图1中,作为膜厚测量用的光学测量装置的光源部分是采用卤素灯40及单色仪41,但膜厚监控系统所使用的光学测量装置的光源部分不限定于图1的构成例子,可以根据测量对象选择适当的光源。 In Figure 1, a light source part with a film thickness measurement apparatus is an optical measurement using a halogen lamp 40 and monochromator 41, the light source section of the optical film thickness measuring device used in the monitoring system is not limited to the configuration example 1 of FIG. you can be appropriately selected according to the measurement target light source. 例如在制造WDM用滤光器时,采用波长1460~1580nm的可调谐激光器(可变波长激光器)。 For example, when manufacturing a WDM optical filter, a wavelength of 1460 ~ 1580nm tunable laser (wavelength variable laser). 另外,不限于采用单色测量光的形态,也可以是用白色测量光而在受光单元一侧形成单色的形态。 Further, not limited to take the form of monochromatic light is measured, may be formed by monochromatic light forms white light measured receiving unit side. 与利用单色测量光的形态相比,在受光单元一侧形成单色的形态,具有干扰少的优点。 Compared to Form monochromatic measuring light and a monochromatic light in the form of receiving unit side, it has the advantage of low interference.

下面说明如上所述构成的溅射装置10的动作。 The operation of the sputtering apparatus 10 configured as described above is described. 下述的实施例说明的是分别利用反应溅射形成SiO2膜作为低折射率膜及形成TiO2膜作为高折射率膜的例子。 The following examples illustrate the use of reactive sputtering of respectively SiO2 film is formed as a low refractive film and TiO2 film is formed as the examples of the high refractive index film.

一开始,在高折射率膜形成用磁控管溅射源30的各磁控管部分31、34及35安装Ti靶52、53及54,在低折射率膜形成用磁控管溅射源20各磁控管部分21、24及25安装Si靶62、63及64。 Initially, at the high refractive index film 30 forming each of the magnetron 35 and the mounting portions 31, 34 and 52, 53, 54 Ti target with a magnetron sputtering source, a magnetron sputter source with a low refractive index film is formed each portion 21, 24, 20 and 25 of the magnetron targets 62, 63 and 64 mounted Si. 常用的靶的大小采用高1.1m、宽15cm的靶,AC用的各靶的大小采用高1.1m、宽10cm的靶。 Commonly used target size 1.1m high, 15cm wide target, the size of each target using an AC 1.1m high, 10cm wide target.

另外,在各基板保持架14上,纵向排列安装各9片厚1.1mm、10cm见方的玻璃基板。 Further, on each substrate holder 14, a thickness of 1.1mm each longitudinally aligned mounting 9, a glass substrate of 10cm square. 然后,利用旋转泵将腔室12先抽至5pa后,用低温泵抽气达到1×10-5pa。 Then, after the use of a rotary pump to the chamber 12 is evacuated to 5Pa, was evacuated by a cryopump 1 × 10-5pa.

然后,将氩气以100sccm的流量及氧气以30sccm的流量通过质量流控制器引入腔室12内。 Then, the flow rate of argon gas and oxygen gas flow rate of 30sccm to 100sccm is introduced into the chamber 12 through a mass flow controller. 这时的气压为0.4pa。 At this time the pressure of 0.4pa. 另外,sccm是标准状态(0℃,一个大气压)下的流量(cm3/分)。 Further, sccm is the standard state (0 ℃, atmospheric pressure) flow rate (cm3 / min) under.

为了形成SiO2膜,对安装Si靶62的常用的磁控管23供给直流10KW的矩形波脉冲功率(频率为50KHZ)对安装Si靶63及64的AC磁控管27供给交流20KW的功率,关闭靶与基板间配置的挡板(图1中未图示),进行5分钟的预放电,然后打开两者间的挡板,进行成膜。 For forming the SiO2 film, the rectangular wave pulse is supplied to the common power 10KW DC magnetron target 62 is mounted Si 23 (frequency of 50KHZ) 20KW AC AC power supplied to the magnetron 27 is mounted to the Si target 63 and 64, closing baffle (not shown in FIG. 1) disposed between the target and the substrate, the pre-discharge for 5 minutes, and then the shutter is opened between them, forming a film.

在成膜中,利用上述的膜厚监视系统对基板保持架14上的基板18测量透射率。 In film formation, the substrate holder 18 for measuring the transmittance of the substrate 14 using the film thickness monitoring system. 由于基板18的透射率与成膜的膜厚对应变化,因此通过监视透射率,能够掌握膜厚。 Since the transmittance of the deposition film thickness of the substrate 18 corresponds to the variation, thus by monitoring the transmittance, the film thickness can be grasped. 为参考起见,图3所示为本实施例的膜厚监视信号例子。 For reference, an example of a film thickness monitor signal as shown in the embodiment of the present FIG.

一面利用膜厚监视系统监视膜厚,一面进行成膜,在成膜达到设计膜厚的90%时,停止对AC磁控管27供电,仅用常用磁控管23进行成膜。 Side using a film thickness monitoring system monitoring the film thickness or film formation, during the film formation thickness of 90% of the design, the AC power supply is stopped magnetron 27, the magnetron 23 is used only deposition. 在成膜中,用个人计算机50计算透射率的测量结果,将该测量结果的信息反馈给各电源26及22,通过这样进行控制,使得提高成膜沿基板18的旋转方向的均匀性,同时使膜厚达到设计膜厚。 In film formation, the transmittance is calculated by the personal computer 50 the measurement result, the measurement result information fed back to each of the power supply 26 and 22, with such control, so improving the uniformity of the deposition along the rotational direction of the substrate 18, while design of the thickness of the film thickness. 另外,也可以控制基板保持架14的转速或挡板的开度(开闭量),来调整成膜。 Further, the substrate may be controlled to maintain the degree of opening of the shutter speed or the holder 14 (opening and closing amount) to adjust the film formation.

然后,为了形成TiO2膜,对安装Ti靶52的常用磁控管33供给直流15KW的功率,对安装Ti靶53及54的AC磁控管37供给交流30KW的功率,与SiO2膜的成膜工序相同,在进行5分钟的预放电后,打开两者间的挡板进行成膜。 Then, in order to form a TiO2 film, the supply of the magnetron 52 is mounted in the conventional Ti target 33 of 15KW DC power, AC magnetron 37 is mounted for supplying a Ti target 53 and 54 30KW AC power, the step of forming SiO2 film the same, after performing a pre-discharge for 5 minutes, the shutter opening between the two film formation. 在TiO2膜的情况下也同样,在成膜达到设计膜厚的90%时,停止对AC磁控管37供电,仅用常用磁控管33进行成膜。 In the case where the TiO2 film also, when the thickness of the deposition 90% of the design, the AC power supply 37 to stop the magnetron, the magnetron 33 used only for deposition. 在成膜中,将透射率的测量结果反馈给各电源36及32,以提高膜的均匀性,进行正确的膜厚管理,这一点与SiO2膜的成膜工序相同,重复进行上述的SiO2膜的成膜工序及TiO2膜的成膜工序,制成玻璃(基板)/SiO2(94.2nm)/TiO2(57.3nm)/SiO2(94.2nm)/TiO2(57.3nm)/SiO2(94.2nm)/TiO2(57.3nm)/SiO2(188.2nm)/TiO2(57.3nm)/SiO2(94.2nm)/TiO2(57.3nm)/SiO2(94.2nm)/TiO2(57.3nm)/SiO2(94.2nm)的13层带通滤光器。 In film formation, the transmittance measurement result is fed back to each power supply 36 and 32, to improve the uniformity of the film, the film thickness correctly managed, and that the same film forming process of the SiO2 film, the SiO2 film described above is repeated and the step of forming the TiO2 film deposition process, made of glass (substrate) / SiO2 (94.2nm) / TiO2 (57.3nm) / SiO2 (94.2nm) / TiO2 (57.3nm) / SiO2 (94.2nm) / TiO2 (57.3nm) / SiO2 (188.2nm) / TiO2 (57.3nm) / SiO2 (94.2nm) / TiO2 (57.3nm) / SiO2 (94.2nm) / TiO2 (57.3nm) / SiO2 (94.2nm) 13 layer tape pass filter. 另外,将这样的膜结构表示成玻璃/(SiO294.2nm/TiO257.3nm)3/SiO2188.2nm/(TiO257.3nm/SiO294.2nm)3。 Further, such a film structure as represented by glass /(SiO294.2nm/TiO257.3nm)3/SiO2188.2nm/(TiO257.3nm/SiO294.2nm)3.

图4所示为该制成的带通滤光器的光谱特性。 Spectral characteristics shown in FIG. 4 that made the band pass filter. 该图中的黑圆圈(●)是设计值,实线所示为利用本实施例制成的带通滤光器的光谱特性测量结果。 Black circles in the figure (●) is a design value, the measured results are shown in solid lines utilize the spectral characteristics of a bandpass filter made in Example. 虚线所示是为了比较,是表示用没有前述实施例的AC磁控管、没有对电源的反馈系统的图27那样构成的溅射装置制成的带通滤光器的光谱特性测量结果。 For comparison, it is not represented by the AC magnetron embodiment, no measurement result of the spectral characteristics of the bandpass filter made of the sputtering apparatus of FIG power feedback system 27 constructed as shown in dashed lines. 根据图4所示,采用本发明制成的带通滤光器具有近似按照设计值的光谱特性,但用没有对电源的反馈而制成的带通滤光器,在与带通滤光器的设计波长(550nm)不同的波长处透射率具有峰值。 According to FIG. 4, the present invention is made of a band-pass filter having a spectral characteristic approximate accordance with the design value, but with no band pass filter of the feedback power is made, with the bandpass filter design wavelength (550 nm) at a wavelength different from the transmittance has a peak.

通过利用本实施形态有关的溅射装置10,能够在基板18上高速形成多层膜,而且能够以高精度进行膜厚控制,能够以高生产率制造WDM用滤光器及分色镜等。 For sputtering apparatus 10, a high speed can be formed by using the present embodiment, multilayer film 18 on the substrate, and the film thickness can be controlled with high precision, it can be manufactured with a WDM filter and a dichroic mirror or the like with high productivity.

在上述实施例的情况下,达到设计膜厚的90%膜厚前,是同时使AC磁控管及常用磁控管工作,然后仅停止AC磁控管的放电,仅使常用磁控管继续放电,但控制方式不限定该例子。 In the case of the above-described embodiment, the first 90% of the design thickness of the film thickness, is used while the operation of the magnetron and AC magnetron and AC magnetron discharge stops only, only the conventional magnetron continue discharge, but the control is not limited to this example. 例如也可以是仅用AC磁控管成膜达到90%、然后仅用常用磁控管成膜这样的控制方法。 It may be, for example, only AC magnetron deposition reached 90%, then only such conventional magnetron deposition control method. 当然,停止AC磁控管的时刻不限定于设计膜厚的90%成膜时刻,可以适当设定。 Of course, AC magnetron stop time is not limited to 90% of the deposition time during the design thickness can be set appropriately.

另外,在上述实施例中,是在对AC磁控管供电中(在到达设计膜厚的90%之前的期间)也是一面监视膜厚一面进行膜厚控制的,但也可以在对AC磁控管供电中虽进行膜厚监视,但部进行膜厚控制,根据预先调查的供给功率及溅射时间所得到的膜厚预测值进行时间管理,经过规定时间后停止对AC磁控管供电。 In the above embodiments, in the AC power supply of a magnetron (90% of the period until the film thickness reaches design) is the film thickness monitor side control the thickness of one side, but may be an AC magnetron although the supply pipe in film thickness monitor, but the film thickness control portion, the prediction time management based on the thickness value previously investigated power supply and sputtering time is obtained, after a predetermined time to stop the supply of AC magnetron. 然后,也可以采用在仅用常用磁控管开始成膜时开始膜厚控制(例如对电源进行反馈控制)的形态。 Then, the film thickness may be employed to control the start (e.g., feedback control of the power supply) is used only when the form of the magnetron starts forming.

在基板18上测量膜厚的地方(测量点)可以是基板18中间部分的一个地方,也可以是在沿旋转方向的横向(称为“前进方向”)进行多处测量,以测量横向的膜厚分布。 Local (measuring point) measured film thickness on the substrate 18 may be a place intermediate portion of the substrate 18, multiple measurements may be performed in the lateral direction of rotation (referred to as "forward direction"), measured transverse to film thickness distribution. 也可以在沿基板保持架14的转轴的纵向配置多个膜厚测量装置(投光头44及受光头46),采用在纵向的多处进行膜厚测量的形态。 Can be held in the shaft holder 14 along the longitudinal direction of the substrate film thickness measurement apparatus a plurality of (administered by the optical head 44 and the head 46), take the form of the film thickness measured in the longitudinal direction of the multiple.

成膜时,基板保持架14始终处于旋转状态,透射率的测量是对基板保持架14的一圈进行一或一次以上的采样(最好是对十二边形的各边进行一次采样,共计12次)。 When the film formation, the substrate holder 14 is always in rotation, the transmittance measurement is to turn the substrate holder 14 is a holder of sample or more than one (preferably each side dodecagonal one sample of total 12 times). 例如,基板保持架14的旋转机构具有每转1圈产生一次信号的旋转位置传感器、以及基板保持架14的基板安装面在通过圆周方向决定的规定位置时产生信号的基板位置传感器,将这些位置传感器产生的信号作为触发信号,对各次采样进行测量。 For example, the rotation mechanism of the substrate holder 14 has a one-rotation position-sensor signal, and a substrate holder for each one turn of the substrate position sensor substrate mounting surface 14 generates a signal at a predetermined position determined by the circumferential direction, and these positions sensor generates a signal as a trigger signal, the respective samples were measured.

另外,即使省略这些位置传感器,由于能够取得通过进行连续测量而得到的周期性测量信号,因此也可以测量。 Further, even if the position sensor is omitted, since it is possible to obtain a periodic measurement signal obtained by the continuous measurement, thus also be measured. 但是,如上所述通过利用位置传感器,由于能明确掌握测量信号与测量位置的关系,因此能够进行正确的测量。 However, by using a position sensor as described above, since the signal can clearly grasp the relationship between the measurement position of the measurement, correct measurement can be performed.

这样,基板旋转状态下得到的透射率数据串成为表示膜的透射率与角度的关系的数据。 Thus, a state where the substrate rotating transmittance data string becomes the data relation between the transmittance and the film represented by an angle. 该数据串理论上取以测量光的入射角为0°的透射率为中心的线成为对称那样的数值。 The data string taken in theory to measure the angle of incidence of the light transmittance of 0 ° of the center line as the value becomes symmetrical. 利用该对称性,能够得到入射角为0°的透射率,还能够将角度关系近似变换为光谱特性。 With this symmetry, it is possible to obtain the transmittance of the incident angle is 0 °, the angular relations can also be converted into approximate spectral characteristics. 关于近似变换的方法,将用图21至图26详细叙述。 Relates to a method approximate transform 26 will be described in detail with reference to FIG. 21 to FIG.

图1所示的溅射装置10是在基板保持架14的内侧配置投光头44,而受光头46设置在腔室12的外部,但也可以采用调换投光头44与受光头46的配置关系的形态。 Sputtering apparatus shown in FIG. 10 is disposed inside the projecting head 44 of the substrate holder 14, and the receiving head 46 disposed outside the chamber 12, but may be exchanged using the optical head 44 is disposed administered by the relationship with the head 46 form.

下面说明上述实施形态的变形例。 Modification of the above embodiment will be described below.

图5为其它实施形态有关的光学多层膜成膜用溅射装置70的示意图。 5 is related to another embodiment of the optical multilayer film 70 is a schematic view of a sputtering apparatus. 在图5中,与图1相同的部分附加相同的标号,其说明省略。 In FIG. 5, the same reference numerals and the same parts in FIG. 1, the description thereof will be omitted. 另外,在图5中,为了简化图形,图中未画出卤素灯40、单色仪41、光纤42、受光处理单元48及个人计算机50等构成(在图6及图7中也相同)。 Further, in FIG. 5, in order to simplify the drawings, a halogen lamp not shown in FIG. 40, the monochromator 41, the optical fiber 42, the light receiving processing unit 48 and personal computer 50 or the like (the same in FIGS. 6 and 7).

图5所示溅射装置70中,对于低折射率膜形成用及高折射率膜形成用的两部分,其常用磁控管23及33和AC磁控管27及37的设置场所被隔开,在各磁控管(23、33、27、37)与基板18之间分别设置可开闭的挡板72、74、76、78。 Sputtering apparatus 70 shown in FIG. 5, for a low refractive index film and the high refractive index film is formed is formed in two parts with which usual magnetron and AC magnetron 23 and 33 provided spaces 27 and 37 are separated provided openable flap 72,74,76,78 respectively between the magnetron (23,33,27,37) and the substrate 18. 在该图中,表示形成低折射率膜的状态,配置在低折射率膜形成用的常用磁控管23及AC磁控管27前面的挡板72及76处于打开状态,而配置在高折射率膜形成用的常用磁控管33及AC磁控管37前面的挡板74及78处于关闭状态。 In the figure, showing the state of forming a low refractive index film is disposed in the low refractive index film 23 is formed of a conventional magnetron and AC magnetron 27 and the front flap 72 in an open state 76, is arranged in the high-refractive of the film 33 is formed of a conventional magnetron and AC magnetron 37 of the front bezel 74 and 78 in a closed state.

该图中,在利用反应溅射工艺得到所希望的膜厚时刻,通过关闭挡板72及76,能够确定使成膜反应停止,同时通过关闭成膜不用的溅射源的挡板74及78,能够防止靶的劣化。 In this FIG., The film thickness at the time obtained by reactive sputtering process, a desired, by closing the shutters 72 and 76, film formation can be determined to stop the reaction, and film formation by sputtering source without closing the shutter 74, and 78 , it is possible to prevent deterioration of a target. 若低折射率膜的成膜结束,则打开挡板74及78,进行高折射率膜的成膜。 If the low refractive index film deposition is completed, the shutter 74 is opened, and 78, for forming a high refractive index film.

另外,如图6所示,还最好采用在各磁控管(23、33、27、37)的左右两侧配置防粘板80的形态。 Further, as shown in Figure 6, is also preferably used in the form of respective magnetrons (23,33,27,37) disposed left and right sides of the release plate 80. 防粘板80具有防止等离子绕进去的作用,仅对位于磁控管部分正面的基板18有成膜作用,防止对除此以外的基板(相邻的基板)成膜。 Preventing the release plate 80 has the role of the plasma around the inside, only on the front portion of the magnetron has a film formation substrate 18, except to prevent substrate (adjacent to the substrate) was formed. 利用防粘板80分别包围各磁控管溅射源的左右,通过这样能够不受其它磁控管溅射源产生的等离子的影响,防止对靶粘附杂质。 The release plate 80 by using the left and right surround each magnetron sputtering source, the influence of the plasma can be generated by such a magnetron sputter source is not otherwise, prevent adhesion of the target impurities.

图7所示为阴极配置的变化图。 Change configuration shown in FIG. 7 as a cathode in FIG. 在实施本发明时,如图7(a)至(d)所示,对于阴极配置能够有各种形态。 In the practice of the present invention, FIG. 7 (a) to (d), for the cathode is configured to have a variety of forms. 该图中的“H”标号表示高折射率形成用的阴极(磁控管部分),“L”表示低折射率膜形成用的阴极(磁控管部分。图7(a)是将高折射率膜形成用的阴极与低折射率膜形成用的阴极隔开配置的例子,如图5说明的那样。图7(b)是为了避免等离子的干扰,使高折射率膜形成用的阴极与低折射率膜形成用的阴极相邻的例子。图7(c)是为了避免对膜厚监视的干扰,将监视位置设定在离开阴极的位置的例子。图7(d)所示为同时采用透射型监视及反射型监视作为测量膜厚的装置的例子。 The figure "H" by the reference numeral denotes a cathode (magnetron portion) is formed a high refractive index, "L" represents a cathode (magnetron low index film. FIG. 7 (a) is a high refractive the cathode used in the low refractive index film of the film formed using an example of a cathode is formed spaced apart configuration, as illustrated in FIG. 5. FIG. 7 (b) to avoid interfering ions and the like, the high-refractive index film is formed with a cathode examples of the cathode adjacent a low refractive index film is formed. FIG. 7 (c) in order to avoid interference with the film thickness monitor, the example of the monitoring position is set at a position away cathode. FIG. 7 (d) shows the simultaneously employed as means for measuring the thickness of the example of a transmission type and a reflection type surveillance monitoring.

透射型监视如图1说明的那样,是用投光头44及受光头46测量基板18的透射率的装置。 A transmission monitor 1 as illustrated in FIG, 44 is a projecting head and the optical head apparatus 46 measured by the transmittance of the substrate 18. 反射型监视是从头82向基板18照射光,再用头82接受其反射光,通过分析受光信号来测量反射率的装置。 Monitoring the head 82 is reflective, then receiving the reflected light head 82 irradiating light to the substrate 18, the reflectance measuring device by analyzing the light receiving signal. 图中虽未画出,它也是用与图1相同的卤素灯40、单色仪41及光纤42,将测量光引向反射型监视的头82,用头82接收的光(反射光)通过受光信号处理装置,送至个人计算机50。 Though not shown, it is also the same as in FIG. 40 is a halogen lamp, a monochromator 41 and the optical fiber 42, the measurement light toward the reflection-type monitoring head 82, the light (reflected light) received by the head 82 receiving the optical signal processing apparatus 50 to the personal computer.

如图7(d)所示,在同时采用透射型监视及反射型监视的情况下,最好采用透射率低的区域用反射率的测量结果进行控制、而透射率高的区域采用透射率的测量结果进行控制的形态。 FIG 7 (d), in the case of simultaneous transmission type and a reflection type surveillance monitor, a low transmittance area is preferably used for controlling a measurement result of the reflectance, high transmittance and the transmittance of the region using morphological measurement control. 即,预先设定成为判断透射式/反射式的控制切换用基准的透射率(判断基准值),在透射率低于该判断基板值时,利用反射率的测量结果进行控制,在透射率高于判断基准值时,利用透射率的测量结果进行控制。 That is, set in advance is determined to become a transmission / reflection type with a transmission rate switching control (determination reference value) of the reference, when the transmittance of the substrate is less than the judgment value, using the measurement result of the reflectance is controlled at high transmittance at the time of determination reference value, using the measurement results of the transmittance is controlled.

图8所示为本发明实施时主要使用的靶材及膜材料。 As shown in the target and the film material used in the main embodiment of the present invention, FIG. 作为低折射率材料,有采用前述的Si靶形成SiO2膜的形态,另外还有用SiC靶形成SiO2膜的形态,还有采用Si与Al的合金靶形成由SiO2及AL2O3构成的氧化物膜的形态等。 As the low refractive index material, there is formed using the Si target to form a SiO2 film, in addition to form an SiO2 film is formed by a SiC target, and using an alloy target of Si and Al is formed form an oxide film composed of SiO2 and AL2O3 Wait.

关于高折射率材料也同样,除了有用前述的Ti靶形成TiO2膜的形态,另外如图8所示,可以通过选择靶材形成各种膜材料。 High refractive index material on it, in addition to a useful form of the Ti target with a TiO2 film is formed, as shown in FIG addition, various films can be formed by selecting the target material. 另外,靶材除了金属(导电性材料)以外,还可以用能够进行DC溅射的氧化物、氮化物、氮氧化物、碳化物等,这在图8中未画出。 Further, in addition to the target metal (conductive material), can also be used for DC sputtering can be oxides, nitrides, oxynitrides, carbides, etc., which is not shown in FIG. 8.

图9所示为本发明实施时利用的基板的例子。 Shown in the example embodiment of the present invention is used when the substrate 9 of FIG. 如该图所示,WDM用滤光器中,使用OHARA公司生产的WMS(微晶玻璃)。 As shown, the WDM optical filter using the WMS produced by OHARA INC. (Glass). 另外,作为其它滤光器用的基板,可以根据用途使用无色透明平板玻璃、硬质玻璃及人造晶体等图9所示的各种玻璃。 Further, as another filter device written in the substrate may be colorless transparent plate glass, hard glass and artificial crystal glass and the like as shown in FIG. 9 in accordance with various purposes.

下面说明本发明的其它实施形态。 The following will describe another embodiment of the present invention.

图10为其它实施形态有关的光学多层膜成膜用溅射装置100的构成图。 FIG 10 is related to another embodiment of the optical multilayer film 100 by a sputtering apparatus configuration of FIG. 在该图中,对于与图1及图5所示的装置相同或类似的部分附加相同的标号,其说明省略。 In this figure, the same device shown in FIGS. 1 and 5 or similar part of the same reference numerals, and description thereof is omitted. 在图10中,标有“低速成膜1”的常用磁控管23及标有“高速成膜1”的AC磁控管27是低折射率膜成膜用的溅射源。 In FIG. 10, labeled "a low-speed film formation" common magnetron 23 and labeled "high-speed film 1" AC magnetron sputtering source 27 is used for the low refractive index film formation. 另外,标有“低速成膜2”的常用磁控管33及标有“高速成膜2”的AC磁控管37是高折射率膜成膜用的溅射源。 Further, labeled "low-speed film formation 2" common magnetron 33 and labeled "high-speed film 2," the AC magnetron sputtering source 37 is a high refractive index film formation used.

这些磁控管23、27、33、37面向旋转中心的方向配置,使其它们的中心线23A、27A、33A及37A(是通过各磁控管中心并与靶支持面垂直的线)与基板保持架14的旋转中心(中心轴16)相交。 These magnetrons 23,27,33,37 disposed facing direction of the rotation center, so that their center lines 23A, 27A, 33A and 37A (the center of the magnetron is obtained by the respective supporting surface and perpendicular to the target line) and the substrate with the rotation center (central axis 16) of the frame 14 intersect. 如图10所示,设利用基板保持架14构成的正十二边形的内切圆为15A,外切圆为15B,则基板保持架14至各磁控管23、27、33及37的距离,随着基板保持架14的旋转,在从内接圆15A至外接圆15B的范围内变动。 10, 14 provided by the substrate holding regular dodecagon inscribed circle of the carrier being configured. 15A, 15B circumscribed circle is, the substrate holder 14 to each of 23,27,33 and 37 of the magnetron distance, with the rotation of the substrate holding frame 14, the range of variation in the inscribed circle to the circumscribed circle 15A and 15B from inside. 在该图中所示的状态是基板保持架14的基板支持面的中心点与从该基板支持面见到的各磁控管23、27、33及37的中心点的距离为最小时的状态(基板与靶对向的位置关系的状态)挡板72、74、76及78是这样构成,它分别利用辊子79的旋转力进行开闭动作,与溅射电源22、26、32及36的控制联动,控制对应的挡板72、74、76及78的开闭。 The state shown in the figure is a center point from the center point of the substrate to maintain the substrate support surface of the holder 14 seen from the respective magnetrons the substrate support surface 23,27,33 and 37 is the state of minimum (state of the target substrate and the positional relationship of a) 74, 76 and the baffle 78 is constructed such that each rotational force of the roller 79 is opened and closed, the sputtering power 22,26,32 and 36 control linkage, corresponding to the open and close control of the shutter 74, 76 and 78.

在采用卤素灯40作为膜厚监视系统的光源时,如图10所示,在单色仪41的输出部分配置遮光器84。 When using a halogen lamp as the light source 40 in a film thickness monitoring system shown in Figure 10, the shutter 84 disposed at the output section 41 of the monochromator. 利用遮光器84周期性地遮住来自单色仪41的输出光(单色光),通过这样利用受光处理单元48内的比较器进行除去光源干扰分量的运算。 The light shielding cover 84 is periodically output light (monochromatic light) from the monochromator 41, calculates an interference component is removed by such a light source by the comparator 48 in the light receiving processing unit. 受光处理单元48具有输出使遮光器84动作的调制信号、同时将输入的受光信号的电压值变换为数字信号后提供给CPU51的控制放大器(图11中标有标号49)。 After 48 outputs the modulation signal having the chopper operation of the optical processing units 84, while a voltage value converted by the input optical signal is supplied to a digital signal by the CPU51 of the control amplifier (marked with reference numeral 49 in FIG. 11).

图11所示为利用卤素灯的膜厚监视系统的详细构成方框图。 Figure 11 shows the detailed configuration of a film thickness monitor using a system block diagram showing the halogen lamp. 卤素灯40接受来自灯电源86供给的功率而发光。 Halogen lamp 40 receives power from power supply 86 to emit light. 由卤素灯40照射的光(白光)利用单色仪41形成单色光后,入射至遮光器84。 After light irradiation by a halogen lamp 40 (white) 41 is formed using a monochromator monochromatic light incident on the shutter 84. 遮光器84根据由控制放大器49提供的调制信号动作,通过遮光器84输出被调制的单色光。 The shutter 84 modulated signal supplied from the operation control amplifier 49 is modulated by the shutter 84 outputs monochromatic light. 该被调制的单色光利用分光装置(半透明反射镜等)87一分为二。 The monochromatic light is modulated by a spectral means (half mirror, etc.) 87 into two. 其中一部分引入成为成膜空间的腔室12内,照射测量对象的基板18(相当于测量用样品)。 Wherein a portion of the chamber be introduced into the film-forming space 12, the measurement object 18 irradiated with the substrate (corresponding to a sample for measurement). 透明基板18的光入射至光电倍增器85,变换为与透射光的光量相应的电压信号。 Light is incident to the transparent substrate 18 of the photomultiplier 85, converted into an amount of transmitted light corresponding to a voltage signal. 由光电倍增器85输出的电压信号,利用控制放大器49变换为数字信号后,送至CPU51。 After the voltage signal output from the photomultiplier 85, the control amplifier 49 into a digital signal, sent to the CPU51.

另外,利用分光装置87分光的另一部分光,作为得到光源信息用的光入射至光电二极管88。 Further, by using the spectroscopic means 87 further portion of the light beam splitter, the light incident to the light source information obtained by the photodiode 88. 控制放大器49对光电二极管88提供与遮光器84同步的调制信号,从光电二极管88输出与单色仪41出射的光源直接光的光量相应的电压信号。 Control amplifier 49 to the photodiode 88 provided with the chopper to synchronize the modulation signal 84, the amount of light output from the light source and the photodiode 88 monochromator 41 is directly emitted light corresponding to a voltage signal. 从光电二极管88输出的电压信号在控制放大器49中变换为数字信号后,送至CPU51。 A voltage signal output from the photodiode 88 in the control amplifier 49 is converted into a digital signal, sent to the CPU51.

CPU51根据从控制放大器49输入的透射光的数据及光源直接光的数据,进行透射率的计算、光学膜厚的计算及成膜速率的计算等。 The CPU51 light source control data and the data from the input of the amplifier 49 is directly transmitted light of light transmittance was calculated, and calculates an optical film thickness of the film forming rate is calculated and the like.

也可以不限于采用将卤素灯40的白光利用单色仪41形成单色光后照射基板18的形态,而是将白色测量光照射基板18,在受光侧形成单色光。 May be employed is not limited to the use of the white light from the halogen lamp 40 of the monochromator 41 is formed after the substrate 18 forms monochromatic light is irradiated, the measuring light is irradiated but the white board 18, is formed in the monochromatic light-receiving side. 在这种情况下,在受光头46的前段配置单色仪。 In this case, the optical head 46 by the front stage monochromator configurations. 在受光侧形成单色光的形态与用单色测量光的形态相比,可以减少干扰。 Formed in the form of monochromatic light-receiving side as compared with the morphology of monochromatic measuring light, interference can be reduced.

也可以采用图12所示的系统构成,以代替图11所示的系统构成。 It may also be employed in the system shown in FIG. 12 configuration, instead of the system configuration shown in FIG. 11. 在图12中,对与图11相同或类似部分附加相同的标号,其说明省略。 In FIG. 12, the same or similar with the same reference numerals in FIG portion 11, description thereof is omitted. 在图12所示的例子中,光源部分采用可变波长激光器90,利用可变波长激光单元内的光栅选择输出波长。 In the example shown in FIG. 12, using a variable wavelength laser light source section 90, a variable wavelength using a grating within the laser unit to select the output wavelength. 另外,由于可变波长激光器90的输出稳定,因此不需要图11中说明的光源直接光的监视。 Further, since the output of the variable wavelength laser 90 is stabilized, and therefore does not require a light source 11 described in FIG monitor direct light. 在图12中使用调制的单色光,但也可以用不调制的。 Modulation using monochromatic light in FIG. 12, but it can also be used without modulation. 另外,图12所示的分光装置87也可以省略。 Further, the spectroscopic apparatus shown in FIG 1287 may be omitted.

但是,转盘型溅射装置由于其结构是一面使构成正多边形的的各基板保持架旋转,一面进行成膜,因此如日本专利特开平3-253568号公报也指出的那样,在位于正多边形的边上的部分及位于棱上的部分,其与靶的最短接近距离及相对于靶的基板面角度的关系不同。 However, dial-type sputtering apparatus is due to its structure one surface of each substrate constituting the holder rotating regular polygon, one side of the film formation, so as described in Japanese Patent Laid-Open Publication No. 3-253568 also noted, is located in the regular polygon relationship between the edge portion and the portion located on the edge, which is close to the shortest distance to the target surface and the substrate relative to the target angle is different. 因此,溅射原子相对于基板的附着概率不同,存在膜厚分布相对于基板的旋转方向(一面旋转一面沿基板横向宽度方向前进的方向,按照该意思,则称为“前进方向”)不均匀的倾向。 Thus, sputtered atoms attached to different probabilities with respect to the substrate, the presence of the film thickness distribution of the substrate with respect to the rotational direction (the forward direction while rotating along the lateral width direction of the substrate, according to the meaning, is called "forward direction") unevenly Propensity.

图13所示为其示意图。 Figure 13 shows a schematic diagram thereof. 图13(a)所示为位于由基板保持架202构成的正多边形的边周围的部分最接近靶210的状态,图13(b)所示为正多边形的棱最接近靶210的状态。 13 is positioned around the edge of the state frame portion 202 consisting of a regular polygon closest to the target substrate 210 held by the state (a) shown in FIG. 13 (b) shows a regular polygon edge is closest to a target of 210. 另外,标号220是安装靶210的磁控管部分的衬板。 Further, reference numeral 220 is a mounting plate 210 of a magnetron target portion. 溅射原子的附着概率取决于从靶210至基板204面上的各位置的距离r及其方向(称为“向量<r>”)及向量<r>与基板面的夹角φ。 Adhering probability of the sputtered atoms depends on the distance r and the direction of the position of the target 210 to 204 surface of the substrate (referred to as "vector & lt; r & gt;") and a vector & lt; r & gt; substrate surface angle φ.

如图13(a)及(b)所示,由于随着基板保持架202的旋转,位于正多边形的边周围的部分及位于棱周围的部分的向量<r>及角度φ发生变化,因此在以往的成膜方法中,如图13(c)所示,存在基板204的周边部分附着更多的原子、周边部分的膜厚大于中心部分的倾向。 FIG 13 (a) and (b), since the substrate holding and rotating with the cage 202 positioned around a portion of a regular polygon and edges located around the edge portion of the vector & lt; r & gt; change occurs and the angle φ, thus in the conventional deposition method, as shown in FIG 13 (c), the presence of a peripheral portion of the substrate 204 is attached more atoms, tends central portion is greater than the thickness of the peripheral portion.

在本发明中,为了达到膜厚分布均匀,本实施形态有关的溅射装置100采用图14所示的靶。 In the present invention, in order to achieve a uniform film thickness distribution, the sputtering apparatus of the present embodiment aspect relating to use of the target 100 shown in FIG. 14. 图14(a)为剖面图,图14(b)为平面图。 FIG 14 (a) is a sectional view, FIG. 14 (b) is a plan view. 该靶92是适用于图10的标号23及标号33所示的低速成膜用的溅射源的靶,如图14所示,靶的上表面是将中心位置(沿鼓17的转轴方向的棱线92C)形成尖峰,然后向左右两方向倾斜,即具有所谓屋顶形(倒V字形)的形状。 A low-speed film formation target sputtering source 92 is applied to the target 23 and the reference numeral 33 shown in FIG. 10, FIG. 14, the upper surface of the target is to the center position (along the rotation axis direction 17 of the drum ridgeline 92C) spiking, and inclined to both right and left, i.e. a so-called roof-shaped (inverted V) shape. 相对于水平面的倾斜角度θ取决于用基板保持架14构成的正多边形的边数、直径、基板大小、基板与靶之间的距离(设计上的平均直径等),为了能够实现膜厚分布均匀,要设计成最佳的角度。 The inclination angle with respect to the horizontal plane is θ depends on the distance holder (average diameter design, etc.) 14 between the configuration of the number of sides of a regular polygon, the diameter size of the substrate, the substrate holder and the target substrate, in order to achieve a uniform film thickness distribution , designed to be the best angle.

以往的靶是板厚一定的平板形,在处于基板与靶对向的位置关系时,基板面与靶面处于平行状态(参照图13(a))。 The target is a conventional constant thickness flat plate, when in the positional relationship between the substrate and the target, the target surface and the substrate surface in a parallel state (refer to FIG. 13 (a)). 相反,图14所示的靶92在处于基板与靶对向的位置关系时,成为靶面相对于基板面稍微保持一些角度(倾斜角度θ)的状态。 In contrast, as shown in FIG. 14 of the target 92 is in the positional relationship between the substrate and the target to become a target surface to the substrate surface retains some slight angle (inclination angle [theta]) state.

若采用如上所述构成的靶92,则如图15(a)及(b)所示,由于溅射原子从靶倾斜面92A及92B射出,因此其飞溅分布(溅射原子的密度)是沿靶倾斜面92A及92B的法线方向展开(即成为V字形发射)。 The use of a target consisting of 92 as described above, as shown in 15 (a) and (b), since the sputtered atoms from the target 92A and the inclined surface 92B is emitted, so the splash distribution (density of sputtered atoms) along target normal direction of the inclined surfaces 92A and 92B deployed (i.e., a V-shaped emission). 另外,很好兼顾成为原子射出面的靶倾斜面92A及92B到基板18的各位置的距离及其方向(向量<r>)、以及向量<r>与基板面的夹角φ的关系等各种条件,加以统盘考虑,这样如图15(c)所示,能够沿基板18的前进方向(图中的横向)实现膜厚均匀分布。 Further, a good balance between an atomic emission surface of a target inclined surfaces 92A and 92B to the distance and direction of the position of the substrate 18 (vector & lt; r & gt;), and the vector & lt; r & gt; relation to the angle φ to the substrate surface of the and other conditions, be round consideration, such as shown in FIG 15 (c), the distribution of film thickness can be uniformly implemented in the forward direction (lateral direction in the drawing) of the substrate 18.

图16为比较采用本发明的倾斜形靶92进行成膜的膜厚分布及采用以往的平板形靶(常用靶)进行成膜的膜厚分布的曲线图。 FIG 16 is a comparison of the present invention using inclined-shaped target 92 for forming a film thickness distribution and a graph showing the film thickness using a conventional flat plate-shaped target (common target) for film formation distribution. 该图所示的曲线是在下述实施条件下得到的实验结果。 The graph shown in FIG experimental results obtained under the conditions in the following embodiments. 即,在图10所示的溅射装置100中,采用构成直径1m的正十二边形的各基板保持架,取基板与靶之间的距离为60mm,基板尺寸为35cm见方,在用标号23(或33)所述的低速成膜用溅射源上安装“常用靶”进行成膜的结果及安装倾斜形靶92(倾斜角度θ=5°)进行成膜的结果。 That is, in the sputtering apparatus 100 shown in Figure 10, using regular dodecagon each substrate holder configured 1m diameter, the distance between the substrate and the target is taken as 60mm, substrate size of 35cm square, with numeral low deposition results 23 (or 33) mounting said "common target" as used in the sputter deposition source and the target 92 is mounted inclined shape (inclination angle θ = 5 °) was deposited. 另外,在基板保持架表面的每一面安装基板保持架扩展夹具,安装35cm见方的基板。 Further, the surface of the substrate holder is mounted on each side of the substrate holder extension jig mounting board 35cm square.

从图16可知,若用常用靶,则周边部分的膜厚大于基板中心的膜厚,但在本发明的倾斜形靶92的情况下,膜厚沿前进方向的分布变得均匀。 Seen from FIG. 16, when used with a target, the film thickness is greater than the thickness of the peripheral portion of the center of the substrate, in the case of the inclined shape of the target 92 of the present invention, the film thickness distribution in the advancing direction becomes uniform.

与上述低速成膜用的溅射源相同,对于图10中用标号27及37所示的高速成膜用的溅射源,可采用图17所示的倾斜形靶94及95。 The sputtering source and a low-speed film formation of the same, FIG. 10 for the sputter source 27 and the high-speed deposition is shown by reference numeral 37, the inclined shaped target may be employed as shown in FIG. 95 and 1794. 图17(a)的剖面图及图17(b)的平面图所示的靶94可用作为图10的标号63及54所示的靶。 FIG 17 (a) and a cross-sectional view of the target 94 shown in FIG. 17 (b) is a plan view of FIG. 63 may be used as reference numeral 10 and target 54 as shown. 另外,图17(c)及(d)所示的靶95可用图10的标号64及53所示的作为靶。 Further, FIG. 17 (c) and (d) a target as the target shown in FIG 95 can be used and reference numeral 64 in FIG. 53. 10. 在高速成膜用溅射源(AC磁控管)中,由于使相邻配置的两个靶的靶面向同一方向倾斜也不能达到膜厚均匀,因此这两个靶要以互相为线对称(或者近似线对称)的关系配置。 In high-speed film formation by sputtering source (AC magnetron), since the two targets disposed adjacent the target facing in the same direction of inclination can not achieve a uniform film thickness, so that the two targets to be line symmetry with each other ( arranged symmetrically or approximate line) relationship.

图17所示的各靶94及95的倾斜角度θ是取决于溅射装置的具体条件设计成最佳角度。 Inclination angle θ 94 and 95 of each target is shown in FIG. 17 depending on the particular conditions of sputtering apparatus constructed in an optimum angle. 如图1中也已说明,由于高速成膜用的AC磁控管是交替切换在两个相邻磁控管部分安装的靶的阳极/阴极关系而整体上能作为一个溅射源起作用,因此如图17所示,左右的靶94及95分别具有单一倾斜面(仅单侧倾斜,即所谓楔形),这样在将这两个靶94及95组合使用时,构成与图14中说明的靶92相同的屋顶形靶面。 Has also been described in Figure 1, since the high-speed deposition with AC magnetron is switched alternately on two anode / cathode relationship of adjacent target portions magnetron installed integrally on can act as a sputtering source, Thus 17, 94 and 95 around each target having a single inclined surface (inclined only one side, i.e., the so-called wedge), so that when these two targets 94 and 95 used in combination with the configuration illustrated in FIG. 14 92 targets the same roof-shaped target surface. 关于图17所示的靶94及95的作用,则与图15相同。 17 on the target 94 as shown in FIG. 95 and function, the same as in FIG. 15.

图18是比较采用图17所示的倾斜形靶94及95的AC磁控管产生的膜厚分布与采用以往的平板形靶(常用靶)的AC磁控管产生的膜厚分布的曲线图。 FIG 18 is used to compare the film thickness of the obliquely-shaped AC magnetron target 94 and 95 shown in FIG. 17 is a graph showing the film thickness distribution produced with the use of conventional plate-shaped target (common target) distribution of AC generated by the magnetron . 图18所示的曲线是在下述实施条件下得到的实验结果。 FIG 18 is a graph of experimental results obtained under the conditions in the following embodiments. 即,在图10所示的溅射装置100中,采用构成直径1m的正十二边形的各基板保持架,取基板与靶之间距离为60mm,基板尺寸为35cm见方,在用标号27(或37)所述的高速成膜用溅射源上安装“常用靶”进行成膜的结果及安装倾斜形靶94及95(两者的倾斜角度θ都为5°)进行成膜的结果。 That is, in the sputtering apparatus 100 shown in Figure 10, using regular dodecagon each substrate holder configured 1m diameter, whichever is the distance between the target and the substrate is 60mm, the substrate size of 35cm square, using reference numeral 27 the results (or 37) forming said mounting speed "common target" deposition by sputtering source and the result of the installation of the inclined shape of the target 94 and 95 (the inclination angle θ are both 5 °) forming a film . 另外,在基板保持架表面的每一面安装基板保持架扩展夹具,安装35cm见方的基板。 Further, the surface of the substrate holder is mounted on each side of the substrate holder extension jig mounting board 35cm square.

从图18可知,若用常用靶,则周边部分的膜厚大于基板中心的膜厚,但在本发明的倾斜形靶的情况下,膜厚沿前进方向的分布变得均匀。 Seen from FIG. 18, when used with a target, the film thickness is greater than the thickness of the peripheral portion of the center of the substrate, in the case of the inclined shaped target of the present invention, the film thickness distribution in the forward direction becomes uniform.

也可以是采用图19所示的靶96及97的形态,以代替图17所示的靶94及95。 It may take the form of a target 96 and 97 shown in FIG. 19, 94 and 95 instead of target 17 as shown in FIG. 即,用图19(a)、(b)所示的靶96置换图17的靶94,用图19(c)、(d)所示的靶97置换图17的靶95。 That is, using FIG. 19 (a), (b) replacement of a target 96 as shown in FIG target 9417, and Fig 19 (c), (d) replacement of a target 97 as shown in FIG target of 9517. 图19所示的靶是适用于AC磁控管的左右的靶96及97的上表面分别形成屋顶形(“A“形)的形态。 Of the target shape shown in FIG. 19 is applied to the upper surface of the right and left AC magnetron targets 96 and 97 are respectively formed in a roof shape ( "A" shape). 在这种情况下,内侧的倾斜面96A及97A的倾斜角(θ1)和外侧的倾斜面96B及97B的倾斜角(θ2)是取决于溅射装置100的构成条件等设计成的合适值。 In this case, the inclination angle of the inclined surface (theta] 1) of 96A and 97A of the inner and outer inclined surface inclination angle (θ2) 96B and 97B are dependent on the sputtering conditions and the like constituting the apparatus 100 is designed to be an appropriate value. 通过这样,能够实现膜厚在前进方向的分布均匀。 By this, it is possible to achieve uniform distribution of the film thickness in the forward direction.

下面说明有关膜厚监视方法的其它实施形态。 The following will describe another embodiment relating to a film thickness monitoring method.

对于作为目标的光学膜厚nd(这里,n为膜的折射率,d为物理膜厚),若采用满足下式(1)的波长λ的光作为测量光,(式1) For a target optical thickness nd (Here, n is the refractive index of the film, d is the physical thickness), the optical wavelength of formula (1) is employed when λ is satisfied as the measurement light, (Formula 1)

nd=mλ/4 ……(1)式中,m为正整数,λ为光的波长使该测量光垂直射入成膜中的基板(入射角=0°),测量其透射率(或反射率),则在所形成的膜的光学膜厚成为测量波长λ的1/4整数倍时(即满足上述式(1)时),透射率(或反射率)达到极值。 nd = mλ / 4 ...... (1) where, m is a positive integer, [lambda] is the wavelength of the light so that the measuring light perpendicularly incident on the substrate (incident angle = 0 °) in the film formation, the measured transmittance (or reflectance rate), then the optical thickness of the formed film becomes an integral multiple of the measuring wavelength λ 1/4 (i.e., satisfies the formula (1)), the transmittance (or reflectance) extremes.

图20所示为在玻璃基板上形成TiO2(n=2.4)膜时透射率相对于测量波长550nm的变化曲线图。 As shown in FIG. 20 to form (n = 2.4) when the transmittance of the film of TiO2 on the glass substrate relative to the measuring wavelength of 550nm curve of FIG. 在该图中,横轴表示成膜的膜厚(几何膜厚d),纵轴表示透射率。 In this figure, the abscissa represents the thickness of a film (the geometrical film thickness d), the vertical axis represents transmittance. 如该图所示,在光学膜厚nd为λ/4的整数倍时,透射率表现为极值。 As shown in FIG, nd is an integral multiple of λ / 4, the transmittance of the optical film thickness extremum performance.

利用这样的现象,对作为目标的膜厚,采用满足上述式(1)的测量波长λ的光,就能够进行膜厚监视及成膜控制。 With such a phenomenon, the target film thickness, the wavelength of the optical measurement using the formula (1), λ is satisfied, it is possible to monitor the film thickness and the deposition control.

但是,在图1或图10中所示的转盘型溅射装置的情况下,由于基板保持架14在旋转因此测量光的入射角及测量位置(监视位置)一直在变化。 However, in the case of the dial-type sputtering apparatus shown in FIG. 1 or FIG. 10, since the (monitoring position) 14 is always changing and therefore the rotation angle of incidence of the measuring light and the measuring position of the substrate holder. 在测量光的入射角变化时,若透射率的值发生很大变化,则难以进行高精度的测量及成膜控制。 When measuring the change in the angle of incidence of light, if the value of the transmittance greatly changes, it is difficult to perform accurate measurement and control of deposition. 实际上,在构成的膜10层以上的情况下,由于测量光的入射角变化而引起透射率的极值位置及透射率发生变化,因此用以往的方法难以进行膜厚测量及成膜控制。 Indeed, in the case where the layer film 10 made of, since the change in the angle of incidence of the measurement light caused by the position of the extremum of the transmittance and the transmittance change, so it is difficult to use a conventional film thickness measurement method and film control.

关于解决上述问题用的方法,下面用具体的例子进行说明。 On the solution to the aforesaid problems, will be described below with reference to specific examples.

图21所示为在形成由玻璃/(TiO292.9nm/SiO257.3nm)7/TiO2185.8nm/(SiO257.3nm/TiO292.9nm)7的膜结构构成的29层单腔带通滤光器(中心波长550nm)时波长550nm的测量光引起的透射率的变化曲线图。 Figure 21 shows a single layer 29 is formed in the cavity bandpass filter made of glass /(TiO292.9nm/SiO257.3nm)7/TiO2185.8nm/(SiO257.3nm/TiO292.9nm)7 film structure of ( FIG transmittance curves of the center wavelength 550nm) measuring the wavelength of 550nm light.

若着眼于成膜过程中各阶段的膜的光学性质,则如图21所示,可以划分成区间A~D的四个区间。 Focusing on the optical properties of the film forming process in each stage, as shown in FIG 21, may be divided into four sections in sections A ~ D.

区间A(第一层~第12层)是透射率与膜厚有很大的关系、而与测量光的入射角基本上无关的区间。 Section A (first layer 12 to third layer) is the transmittance of the film thickness has a great relationship, with the angle of incidence of measurement light is substantially independent of range. 实际上,0°入射的透射率与10°入射的透射率的值基本上一致。 In fact, the value of the transmittance of the transmittance of incident 0 ° and 10 ° incident substantially uniform. 区间B(第13层~第18层)是透射率与膜厚基本无关、又与入射角基本无关而且透射率的变化很少的区间。 Section B (second layer 13 to third layer 18) is substantially independent of film thickness with the transmittance, but also substantially independent of the angle of incidence and little change in the transmittance range. 区间C(第19层~第29层)是即与膜厚有关、又与入射角有关的区间。 Section C (the first layer 19 to third layer 29) i.e., the film thickness is related to the angle of incidence and interval. 0°入射的透射率与10°入射的透射率有很大不同,10°入射的透射率数值小(不到10%)。 0 ° incidence transmittance and the transmittance is 10 ° incidence is quite different from the small incident 10 ° transmittance values ​​(less than 10%). 另外,区间D(第29层)是调整光学特性用的区间。 Further, section D (layer 29) is used to adjust the optical characteristics of the interval.

在每个区间,分别进行适当的监视及成膜控制,就能够提高监视精度及膜的光学性质的可控性。 In each interval, respectively, and the film formation monitor proper control, it is possible to improve the controllability of the optical properties of the film and the accuracy of the monitoring. 下面说明各区间中的控制方法。 The control method following the instructions in each section.

<区间A中的膜厚控制> & Lt; film thickness A control section & gt;

图22所示为第一层、第二层、第三层及第九层形成的膜中得到透射率数据与角度的关系的曲线图。 Figure 22 shows a first layer, a film of the second layer, a third layer formed on the second nine obtained graph of transmittance versus angle data. 在从第一层至第十二层的区间(区间A)中,如图22所示,入射角即使变化,透射率也基本上不变。 In the section (section A) a first layer to a twelfth layer, shown in Figure 22, even if the incident angle changes, transmittance is also substantially constant. 因而,将基板旋转中连续取得的透射率数据在入射角为±5°~±15°左右的范围内取平均值,通过这样能够得到与垂直入射时的透射率基本上相同的数值。 Thus, the rotation of the substrate the transmittance of data acquired continuously at an incident angle averaged within about ± 5 ° ~ ± 15 ° range when the transmittance of the thus obtained normal incidence can be substantially the same value. 然后根据得到的垂直入射时的透射率,计算出透射率达到极值的时间,在实际上透射率的值达到成为极值的值的时刻,停止成膜,采用这样的方法能够控制膜厚。 Then the transmittance of the obtained at normal incidence, the transmittance is calculated time to reach an extreme value, in fact, the value of transmittance reaches the time value becomes an extreme value, the deposition is stopped, such a method can control the film thickness. 另外,由于成为测量对象的基板18在旋转,因此在0°入射时,是对基板18的中心进行测量,而入射角越大。 Further, since the substrate becomes the measurement target 18 is rotated so at 0 ° incidence, is a center of the substrate 18 is measured, and the larger the angle of incidence. 则监视的是越偏离基板中心的位置。 The monitoring of the substrate is offset from the center position. 但是,由于利用图14至图19说明的倾斜形靶。 However, since the 14 to 19 illustrate the shape of the target tilt. 因此沿基板前进方向的膜厚分布均匀,若结合这一点来考虑,则即使监视位置变动,也能够正确测量膜厚。 Thus the film thickness distribution along the traveling direction of the substrate uniformly, when considered in conjunction with this, even if the positional change monitoring, the film thickness can be measured correctly.

<区间B中的成膜方法> & Lt; section B of the film forming method & gt;

在第13层至第18层的区间中,由于透射率的值小,相对于膜厚增加而引起的透射率的变化小,因此难以进行高精度的膜厚控制。 Small variations in the section of the layer 13 to the second layer 18, due to the small value of the transmission rate with respect to the film thickness increases due transmittance, it is difficult to control the film thickness with high accuracy. 因而,在该区间B中,透射率仅作为参考数据而采集数据,主要根据第一层至第十二层的成膜工序中的透射率变化量与成膜时间的关系,计算当前的成膜速率,一到能够得到所希望膜厚的时间,则停止成膜,采用这样的方法以成膜时间来控制膜厚。 Thus, the section B, the reference data transmission rate as the data collection, the main film-forming step in accordance with the relationship between the transmittance of the first layer to the twelfth layer in the deposition time and the amount of change, calculate the current deposition rate, a time to be able to obtain a desired film thickness, the film formation is stopped, such a method to control the film thickness at the deposition time.

<区间C中的成膜方法> & Lt; section C of the film forming method & gt;

图23所示为第28层以后的透射率与角度的关系的曲线图。 Figure 23 is a graph showing the relationship between the angle of the transmittance after 28 layers. 在从第19层至第29的区间(区间C)中,如图23所示,由于透射率的值取决于角度而变化,因此难以采用区间A那样的控制方法。 From section to section 29 (section C) of the layer 19, 23, since the value of the transmission rate varies depending on the angle, it is difficult to use as the interval A control method. 但是,如图23所示,由于表示入射角为0°时的透射率的点成为利用测量取得的透射率曲线与线对称的对称轴相交的点,因此即使没有表示入射角为0°的时刻的严格触发功能,也能够通过对利用测量取得的透射率数据进行运算处理,求得垂直入射时(入射角为0°)的透射率。 However, as shown in FIG. 23, since the incident angle is represented by the point when the transmittance becomes 0 ° point symmetry axis and the line symmetry transmittance curve by intersecting the acquired measurement, so that even an incident angle of 0 ° represents the time strict trigger function, it is possible by using the measured transmittance data obtained arithmetic processing, is obtained when normal incidence transmittance (incident angle of 0 °) of. 另外,能够根据利用测量得到的透射率曲线峰值位置、相对于角度的变化率或面积(即曲线形状),判断取得极值的膜厚。 Further, it is possible according to the transmission curve obtained using the measured peak positions, with the film thickness of the rate of change or area (i.e., a curved shape) of the angle, is determined to obtain extremum. 再有,通过对角度变化而得到的透射率曲线进行近似变换,如图24所示,能够得到测量波长λ的长波长一侧的光谱透射率。 Further, by converting the transmittance is approximated curve obtained by the angular variation, shown in Figure 24, it is possible to obtain spectral transmittance of a long wavelength side of the wavelength λ of the measurement.

图24所示为对入射角为0°±10°的范围内取得的透射率曲线的数据进行近似变换而得到的光谱透射率的曲线图。 Graph showing transmittance curves acquired data in Figure 24 for the incident angle of 0 ° ± 10 ° range is approximate transformation is obtained spectral transmittance. 通过利用±10°范围的数据,能够预测测量波长(=550nm)的长波长一侧即550nm≤λ≤552.35nm的光谱透射率。 Long wavelength side by using the ± 10 ° range of data can be predicted measurement wavelength (= 550nm) i.e. spectral transmittance of 550nm≤λ≤552.35nm. 该预测值如图24所示,与实际的光谱透射率(通过实验确认的光谱透射率)以极高的精度一致。 The predicted values ​​shown in Figure 24, consistent with high accuracy with the actual spectral transmittance (experimentally confirmed by the spectral transmittance).

<区间D中的成膜方法> & Lt; Section D of the film forming method & gt;

在从第一层起依次不断成膜的过程中,有时由于实际的膜厚相对于目标膜厚会产生误差,因此不能得到所希望的光学特性。 In the process from the first layer are continuously formed into a film, the film thickness may since the actual thickness of the target with respect to an error is caused, and therefore can not obtain the desired optical characteristics. 在这样的情况下,在成膜过程中设置进行光学特性修正的层。 In this case, the deposition process is provided for correcting the optical properties of the layer. 在本例中,将第29层作为该修正用的层(最后层),将它作为区间D。 In the present embodiment, the first layer 29 as a layer (last layer) used in the correction, as the interval D.

在该区间D中,利用从满足式(1)那样的测量波长(λ=550nm)稍微向短波长一侧偏离的波长的测量光,进行透射率的测量。 In this section D, the use of measurement light satisfies the formula (1) as a measurement wavelength (λ = 550nm) wavelengths to the shorter wavelength side is slightly deviated, the measured transmittance. 在本例中,利用波长λ=549nm的测量光进行测量,得到图25所示的信号。 In the present embodiment, a wavelength λ = 549nm measurement light is measured to obtain the signal 25 shown in FIG. 利用这样得到的测量数据,与前述区间C相同,通过进行近似变换,如图26所示,能够求得测量波长λ=549nm的长波长一侧即549nm≤λ≤551.35nm的光谱透射率。 Using the measured data thus obtained, with the same interval C, by approximate transformation, as shown in Figure 26, can be obtained by measuring wavelength λ = 549nm long wavelength side of the spectral transmittance i.e. 549nm≤λ≤551.35nm.

这样求得的光谱透射率与实际的光谱透射率一致,而且一致的程度达到极高的精度。 Such spectral transmittance obtained consistent with the actual spectral transmittance, and achieve consistent high degree of accuracy. 在成膜工序中,得到图26所示的光谱透射率的变化曲线,通过这样对于带通滤光器的光学性能的“中心波长”、“特定波长的透射率”及“带宽”等全都能够看到。 In the film forming step, to obtain spectral transmittance curve shown in FIG. 26, for all this is possible by the bandpass filter "center wavelength" optical properties, "the transmittance of a particular wavelength" and "bandwidth", etc. see. 因而,能够一面确认使其满足作为目标的性能,一面补偿膜厚(即光学特性),这样能够提高产品的合格率(正品率)。 Accordingly, it is possible to confirm on one side so as to satisfy the performance as the target, the film thickness of one side of the compensation (i.e., optical characteristics), so that the product yield can be improved (rate of quality). 在上述的例子中,是采用λ=549nm的光作为从测量波长λ=550nm稍微向短波长一侧偏离的测量光,但测量使用的光的波长可以根据想要测量的膜的种类及层数进行更换。 In the above example, is employed as the light λ = 549nm [lambda] the wavelength of the measurement light from the measurement is slightly shifted to the shorter wavelength side = 550nm, but the wavelength of the light used for measurement according to the type and number of layers may want to measure the film to be replaced.

在上述实施形态中,所述的是计算透射率的例子,但在本发明实施时,也可以计算反射率,以代替透射率,或者与透射率一起计算。 In the above embodiment, it is an example of the calculation of the transmittance, but in the embodiment of the present invention, the reflectance may be calculated, instead of the transmittance, or together with the calculated transmittance.

图10所示的溅射装置100是在装置内的全部磁控管部分安装了倾斜形靶,但在本发明实施时,也可以采用在一个装置内混合装有常用靶及倾斜形靶的形态。 100 are all part of a magnetron sputtering apparatus 10 shown in FIG device mounted obliquely shaped targets, but in the embodiment of the present invention, be mixed in a conventional apparatus equipped with the target and the inclined shape of the target may take a form .

〔提高膜厚监视精度的技术〕下面说明提高膜厚测量精度的方法。 The film thickness measurement method for improving the accuracy of the film thickness [improve the accuracy of monitoring techniques described below].

在成膜中测量透射率或反射率的光学特性时,存在的问题是,受光单元会检测到来自投光单元以外的光(主要是在磁控管部分周边的成膜空间产生的等离子光),难以进行高精度的光谱测量。 When forming the optical properties measured in transmittance or reflectance, there is a problem, the light receiving unit detects light from outside the light-projecting unit (mainly in the portion of the perimeter of the film-forming space of the magnetron plasma generated light) , it is difficult to perform highly accurate spectral measurements. 对于该问题,采用与遮光频率同步的同步放大器,就能够减少干扰。 For this problem, a lock-in amplifier is synchronized with the frequency of the light shielding, it is possible to reduce interference.

但是,由于溅射成膜中的等离子发光强度在时间上是不稳定的,因此难以完全去除该干扰。 However, since the sputter deposition of plasma emission intensity is unstable in time, it is difficult to completely remove the interference. 特别是在测量光的强度在比较弱的条件下进行测量时,存在因等离子散射而引起干扰的问题。 Particularly when measurement light intensity was measured at conditions of a relatively weak, there is a problem caused by the plasma scattering interference.

为了解决这样的问题,在本发明的实施形态中,将测量部分(受光单元及投光单元)相对于成膜空间沿基板保持架旋转的圆周方向偏离配置,以减少等离子光的影响。 In order to solve this problem, in the embodiment of the present invention, the measuring portion (light receiving unit and light projecting unit) with respect to the circumferential direction of the film-forming space holding the substrate along the gantry rotation is arranged offset, in order to reduce the influence of the plasma light. 在图30所示的例子中,在从磁控管(23、27、33、37)配置的位置沿圆周方向最远离的位置处,配置测量部分。 In the example shown in FIG. 30, at a position arranged from the magnetron (23,27,33,37) in the circumferential direction away from most of the configuration measuring section. 另外,在图30中,对于与图1相同的部分附加相同的标号,其说明省略。 Further, in FIG. 30, the same reference numerals for the same parts in FIG. 1, the description thereof will be omitted. 如图30所示,使检测位置离开成膜空间,通过这样能够提高S/N比,进行高精度的监视。 30, away from the detection position of the film-forming space, can be improved by this S / N ratio, high accuracy monitoring.

成膜空间与监视位置的离开量(距离)可以根据实际的装置结构进行各种设计,但以最接近受光单元的磁控管的中心线与腔室外壁交点为基准点,较好的是取沿外壁面上的周长在水平方向离开150mm以上的位置,最好是取离开900mm以上的位置。 Liftoff (distance) the film-forming space and the position of the monitor may be variously designed according to actual device structures, but the intersection of the center line of the cavity wall closest to the outside light receiving means of the magnetron as a reference point, is preferably taken along the outer wall surface of the circumferential length of 150mm or more away from a position in the horizontal direction, it is preferably taken away from the position of 900mm or more.

再有,最好在受光头46与投光头44之间,即在腔室壁面形成的测量用窗口与基板保持架之间配置长度近似等于腔室12与基板保持架14间隔的遮光筒120,以覆盖测量光的光路。 Further, preferably between 44 and 46 projecting head by head, the length between the holding frame configuration measuring window is formed in the chamber wall and the substrate is approximately equal to the chamber 12 and the substrate holder 14 spaced apart in hood 120, cover the optical path of the measuring light. 另外,使该遮光筒120与腔室12电气绝缘,处于浮空状态,通过这样能够大大地遮断来自成膜空间的等离子散射光。 Further, the light shielding barrel 120 so that the electrically insulated from the chamber 12, in a floating state, can be largely blocked from the plasma film-forming space through such scattered light.

图31是沿图30的31-31线的剖面图。 FIG 31 is a sectional view along line 31-31 in FIG. 30. 如图31所示,受光头46通过支架122安装在腔室12的外壁。 As shown in FIG 31, by the outer wall 12 of head 46122 is mounted in the chamber via a bracket. 遮光筒120安装在腔室12的内壁,使其遮盖测量光的光路。 Shielding cylindrical inner wall 120 is mounted in the chamber 12 so as to cover the optical path of measurement light. 另外,标号124是支持光纤42的支持管。 Further, reference numeral 124 is a support tube to support the optical fiber 42.

图32为遮光筒120的平面图,图33为遮光筒120的侧面图。 FIG 32 is a plan view of the shield cylinder 120, FIG. 33 is a side view of the light-shielding tube 120. 遮光筒120的本体用SUS304等金属材料形成,该遮光筒120通过绝缘板126中介安装在腔室12上。 The cartridge body 120 is formed with a light-shielding metal material such as SUS304, the light-shielding tube 120 through the insulating plate 126 mounted on the intermediary chamber 12. 安装时使用绝缘套128,利用未图示的螺丝固定。 An insulating sleeve 128, secured by screws (not shown) during installation. 另外,作为绝缘板126及绝缘套128的材料,最好是例如含氟树脂的特氟纶(聚四氟乙烯的商标名)。 Further, as a material of the insulating plate 126 and the insulating sleeve 128, for example, preferably a fluorine-containing resin is Teflon (trade name Teflon). 当然,也可以是用特氟纶及其它绝缘材料形成遮光筒120的本体的形态。 Of course, the body may be formed form a light-shielding cartridge 120 with Teflon or other insulating material.

在遮光筒120的前端部设置遮光盖130。 The distal end portion 120 of the light-shielding cover 130 is provided in the light-shielding tube. 遮光盖130利用带黑色的特氟纶形成,在遮光盖130的中心形成与投射光的光点直径近似相同大小的孔131。 Use with black light-shielding cover 130 is formed of Teflon, forming a light spot diameter of the projected light is approximately the same size hole 131 in the center of the light-shielding cover 130. 另外,在遮光筒120本体处于漂游状态时,作为遮光盖130的材料虽也可以使用SUS304那样的导体,但在本例中,为了抑制因基板18与遮光盖130之间的多重反射而产生的散射光的影响,从防止多重反射的观点出发,使用黑特氟纶。 Further, when the light-shielding body 120 is cylindrical drift state, the cover 130 as a light shielding material, although SUS304 may also be used as a conductor, but in the present embodiment, in order to suppress multiple reflection between the substrate 18 and the light-shielding cover 130 is generated Effect of scattered light, to prevent multiple reflections from the viewpoint, using a black Teflon.

利用上述方法,能够大幅度减少因等离子光而引起的干扰,即使在遮光频率为270HZ左右的较低的情况下,也能够进行高精度的测量。 With the above method, can be significantly reduced due to the interference of light caused by the plasma, even in the case where the light-shielding low frequency of about 270HZ, and accurate measurement can be performed. 根据实验可知,通过设置漂移电位的遮光筒120,S/N比提高了200倍。 According to experiments, the potential of the light shielding by providing the drift tube 120, S / N ratio is improved by 200 times. 图30至图33中说明方法,能够适用于图1至图26中说明的各实施形态。 30 to FIG. 33 illustrates a method can be applied to each embodiment in FIGS. 1 through 26 described in FIG.

〔仅使用AC磁控管的实施形态〕在上述的实施形态中所述的例子是,在同时设置AC方式的磁控管及常用型的磁控管的转盘型溅射装置中进行成膜,另外通过连续进行膜的光学特性(透射率或反射率)的测量,在目标膜厚与成膜中的膜厚之差较大时,同时使高速侧磁控管(AC磁控管)及低速测磁控管(常用磁控管)放电,进行成膜,若与目标膜厚之差减小,则仅用低速侧磁控管进行成膜,通过这样进行精密的膜厚控制,能够得到具有所希望的光学特性的层叠膜。 [Using only AC magnetron of the embodiment] In the aforementioned embodiment according to the example, a film is formed the dial-type magnetron sputtering apparatus and a magnetron-type common set while the AC mode, Further optical characteristics (transmittance or reflectance) of the film was measured continuously, the target film thickness when the difference between the film thickness and film formation of large, high-speed side while the magnetron (AC magnetron) and low measuring the magnetron (magnetron common) discharge, a film is formed, if the difference between the target and the film thickness is reduced, the low-speed side of the magnetron deposition only by such a precise thickness control, can be obtained having laminated film for optical characteristics desired. 这样的形态构成的装置是为了形成通信用带通滤光器那样的膜厚误差为0.01%以下的膜厚精度高的膜所需要。 Such apparatus is configured to form a high thickness precision is formed with a thickness error of a bandpass filter such as a 0.01% or less of the communication desired film.

与上不同的是,如图34所示,对于显示器、投影仪、照明器具、各种照相机镜头用的零部件等用途使用的低反射膜、流线式滤光器(edge filter)(红外线反射滤光器、紫外线反射滤光器、红外紫外线反射滤光器、可见光反射滤光器等)及偏振滤光器等,这些膜厚误差只要求1~5%左右的膜结构的情况下,用没有低速成膜用磁控管的装置构成就能够满足要求。 The difference is that the upper, low-reflection film as shown, for display, a projector, a lighting fixture, a variety of camera lens 34 and the like parts with the purpose of use, the flow-line filter (edge ​​filter) (infrared reflective filters, UV-reflecting filter, an infrared reflective filter UV, visible light reflective filters, etc.) and a polarizing filter or the like, the film thickness of these errors requires only about a case where the film structure 1 to 5%, by no slow film-forming apparatus can be configured to meet the requirements of the magnetron.

作为形成膜厚误差只要求1%左右数量级的这样规格的层叠膜的装置,是不使用低速成膜用磁控管,而仅用高速成膜用磁控管成膜,下面说明这样的方法及装置的形态。 Means a laminated film having a thickness of only about 1% of the error requirement of the order of such specifications, is a low-speed film formation without using a magnetron, and only high-speed deposition by magnetron deposition, and such methods will be described below of the means.

图35所示为仅用AC方式的磁控管的成膜装置的示意图。 Figure 35 is a schematic view of the deposition apparatus only AC magnetron of the embodiment. 在该图中,对于与图1的例子相同或类似的部分附加相同的标号,其说明省略。 In the drawing, the same or similar to the example of Figure 1 are assigned the same reference numerals portions, description thereof is omitted. 该成膜装置140是转盘型溅射装置,具有下述构成,它是在高1.5m、直径1.5m的圆筒形腔室12内,构成直径1m的正十二边形的各基板保持架14能够以中心轴16作为旋转中心旋转并支承住,在腔室壁的内侧配置将两个长1m的矩形靶作为一组的AC磁控管27及37。 The film forming apparatus 140 is a dial-type sputtering apparatus has a configuration which is 1.5m high, 1.5m diameter of the cylindrical chamber 12, the diameter of each of the substrates constituting the regular dodecagon 1m holder 14 can be rotated to the central shaft 16 as a rotation center and living support, arranged inside the chamber wall two rectangular targets 1m length of an AC magnetron 27 and a set 37. 使载有基板18的基板保持架14以30rpm的速度旋转,基板18通过AC磁控管27及37的前面,而成膜。 The carrier substrate 18 substrate holder 14 rotating at a speed of 30rpm, the front substrate 18 by the magnetron 27 and AC 37, and deposition. 本例的成膜装置140分别设置低折射率膜形成用及高折射率膜形成用的AC磁控管27及37。 Film forming apparatus 140 of the present embodiment are provided for forming a low refractive index film and the high refractive index film 27 and 37 is formed by the AC magnetron.

本成膜装置140将来自卤素灯40的光通过单色仪41、遮光器84及光纤42,引向投光头44,对旋转中的基板从投光头44照射测量用的光。 This film-forming apparatus 140 from the halogen lamp light through a monochromator 41, a shutter 84, and 42 of fiber 40, toward the projecting head 44, the optical rotation of the substrate is irradiated with the projecting head 44 from the measurement. 透射过基板18的光通过基板保持架14与测量用窗口之间的遮光筒120,在受光头46的积分球及光电二极管上接受光。 Light transmitted through the substrate 18 by the substrate holder 14 and the shield cylinder 120 between the measurement window, receiving light integrating sphere 46 and the photodiode by the optical head. 这样,一面进行成膜,一面测量基板18及形成的膜的透射率。 Thus, forming one side, one side of the substrate 18 and the measured transmittance of the film formed.

用个人计算机50计算该测量结果,再反馈给磁控管控制盘142,使得达到所希望的膜厚。 The measurement result is calculated using a personal computer 50, and then fed back to the magnetron control panel 142, so as to reach the desired thickness. 另外,磁控管控制盘142是控制对AC磁控管27及37供电的电源等的控制部分。 Further, the magnetron 142 is a control panel control section 27 and the AC power supply to the magnetron 37 and the like. 如上所述,AC磁控管是将两个磁控管阴极并排配置,在一个磁控管为阴极时,另一个磁控管成为阳极,是以几十KHZ的高频交换阴极与阳极的磁控管,通过控制成膜参数,使得在反应溅射的移动区域保持成膜条件,这样能够稳定而且高速形成氧化物或氮化物等的薄膜。 As described above, the AC magnetron cathodes is two magnetrons arranged side by side, when a magnetron cathode, an anode magnetron another, is a high-frequency magnetic exchange several KHZ cathode and an anode control, by controlling the deposition parameters, such that the reactive sputtering deposition conditions to maintain the moving area, so that a thin film can be stably formed at high speed and an oxide or nitride or the like.

当然,作为靶的形态,也可以采用图17或图19说明的倾斜形靶。 Of course, as the state of the target, may be employed FIG. 17 or FIG. 19 described inclined TARGET.

下面说明使用图35所示的成膜装置的成膜顺序。 The following describes the deposition sequence of deposition apparatus 35 illustrated in FIG.

首先,在高折射率膜形成用的AC磁控管37上安装Ta靶151及152,同时在低折射率膜形成用的AC磁控管27上安装Si靶161及162,将厚1.1mm、10cm见方的玻璃基板18安装在基板保持架14上。 First, the high refractive index film is formed 151 and 152 mounted on a Ta target 37 with AC magnetron, AC magnetron while forming the low refractive index film is mounted on the Si target 161 and 27 162, 1.1mm thick, 10cm square glass substrate 18 mounted on the substrate holder 14. 然后,用未图示的旋转泵将真空腔室12先抽至5pa后,再用涡轮分子泵抽气至2×10-4pa。 Then, a rotary pump (not shown) of the vacuum chamber 12 is evacuated to the first 5Pa, a turbo molecular pump and then evacuated to 2 × 10-4pa.

抽气后,从高折射率膜形成侧的气体引入口引入370sccm的氩气及180sccm的氧气,开始放电。 After evacuation, the gas introduction port side is formed, and argon gas is introduced 180sccm 370sccm oxygen, the discharge is started from the high refractive index film. 对于高折射率膜形成用的AC磁控管37,控制功率或气体流量等,使得在移动区域或其附近保持成膜状态,以基板保持架14每一圈约0.4nm的成膜速度进行成膜。 For the high refractive index film is formed by the AC magnetron 37, a power or gas flow rate control, so that the state remains at or near the deposition zone moves to the substrate holder 14 each turn of the film-forming speed of about 0.4nm to be membrane. 这时,一面进行成膜,一面每一圈进行变化透射率的测量在腔室12上形成的测量用窗口与基板保持架14之间配置遮光筒120。 In this case, one side of the film formation, one surface of each turn of the window and the substrate was measured by measuring the change in the transmittance is formed on the holding chamber 12 arranged between the light-shielding tube 14 120. 如图32及图33中所述,遮光筒120具有与投光头44照射的光束直径近似相同大小的孔131,形成与基板保持架14和所述窗口之间的距离近似相同的长度。 As shown in the light-shielding tube 120 has 32 and 33 and the diameter of the irradiation beam projecting head 44 approximately the same size hole 131 is formed between the holder and the substrate holder 14 and the distance from the window of approximately the same length. 遮光筒120在电气上处于漂游电位状态,能够抑制在受光部分附近散开的等离子的影响。 Drift tube 120 is in the light shielding state in which the electric potential can be suppressed by the influence of scattered light receiving portion in the vicinity of the plasma. 利用该方法,即使在遮光频率比较低的情况下,也能够进行高精度的测量,能够进行高精度、测量速度快的膜厚监视。 With this method, even when the light shielding frequency is relatively low, it is possible to perform highly accurate measurement can be performed with high accuracy, fast measurement speed film thickness monitor.

根据这样得到的透射率数据,相对于所希望膜厚计算现在的成膜膜厚,将该结果对磁控管控制盘142进行反馈。 The transmittance of the data thus obtained, with respect to the desired thickness of the deposition film thickness is now calculated, the results of the magnetron 142 performs feedback control of the disc. 若到达目标膜厚,则停止对AC磁控管37的供电,或者在接近目标膜厚的阶段,以低速关闭挡板(到挡板关闭为止基板保持器还旋转几圈~几十圈以这样的速度关闭),通过这样进行控制,使得旋转方向上膜厚均匀同时达到设计值。 When the film thickness reaches the target, the magnetron is stopped on the AC power supply 37, or close to the target thickness of the stage, in order to close the low speed shutter (the shutter closes the further rotation of the substrate holder in such a few turns to several tens turns off speed), by controlling in this way, so that the film thickness direction of rotation while achieving uniform design value.

另外,在上述的反馈控制中,也可以考虑到目标膜厚与现在膜厚之差,通过改变成膜参数,以分阶段地控制成膜速度,提高膜厚精度,缩短成膜时间。 Further, in the above-described feedback control, it may be considered the difference between the present target film thickness and the film thickness by changing the deposition parameters to control the deposition rate stepwise, improving the film thickness accuracy and shorten the film formation time.

然后,为了进行低折射率膜即SiO2的成膜,引入250sccm的氩气及140sccm的氧气,开始放电。 Then, in order to perform film formation of the low refractive index film SiO2 i.e., argon gas is introduced and 140sccm 250sccm oxygen, and discharge is started. 对于AC磁控管27,控制电压,使得在移动区域或其附近保持成膜状态,以基板保持架14每一圈约0.4nm的成膜速度进行成膜。 For AC magnetron 27, the control voltage, so that the state remains at or near the deposition zone moves to the substrate holder 14 each turn of the film-forming speed of about 0.4nm to form a film. 这时,用与高折射率膜形成时相同的方法,每一圈测量透射率,控制AC磁控管27,以得到所希望的膜厚。 In this case, the same manner as when forming the high refractive index film, transmittance was measured each turn, controls the AC magnetron 27, to obtain a desired film thickness.

这样交替反复形成高折射率膜及低折射率膜,制成可见光反射滤光器。 Such a high refractive index alternately and repeatedly forming the low refractive index film and a film made of a visible light reflecting filter.

另外,根据与上述相同的方法,在直径10cm的硅晶片上形成基板/Ta2O5(200nm)/SiO2(200nm)/Ta2O5(200nm)/SiO2(200nm)/Ta2O5(200nm)/SiO2(200nm)/Ta2O5(200nm)/SiO2(200nm)/Ta2O5(200nm)/SiO2(200nm)的10层层叠膜。 Further, according to the same method as described above, forming a substrate / Ta2O5 (200nm) / SiO2 (200nm) / Ta2O5 (200nm) / SiO2 (200nm) / Ta2O5 (200nm) / SiO2 (200nm) on a 10cm diameter silicon wafer / Ta2O5 (200nm) / SiO2 (200nm) / Ta2O5 (200nm) / SiO2 (200nm) 10 layer laminate film.

在该成膜前后,对硅晶片的表面使用Tencor Instruments公司的FLX THINFILMS STRESS MEASUREMENT SYSTEM(FLX薄膜应力测量系统))的FleXus F2320,测量曲率半径,根据该测量值之差,求出层叠膜的应力是压缩应力,为17Mpa。 Before and after the film using Tencor Instruments Company FLX THINFILMS STRESS MEASUREMENT SYSTEM (Thin Film Stress Measurement System FLX) surface of the silicon wafer) is FleXus F2320, the radius of curvature measured from the difference of the measured values ​​obtained laminated film stress It is the compressive stress of 17Mpa.

图36所示为膜特性的评价结果。 Figure 36 shows the results of evaluation of the film characteristics. 另外,在该图表中,为了比较起见,同时记入仅使用DC方式磁控管成膜的26层3.0μm层叠膜的评价结果、以及蒸镀产品的34层4μm层叠膜的评价结果。 Evaluation results of the laminate film 3.0μm layer 26 Further, in the graph, for comparison purposes, and is recorded in only the DC magnetron mode of deposition, and evaluation results of the laminate film 34 4μm layer deposition product. 各项目的测量方法如下所述。 The object of the measurement is as follows.

·膜应力 使用Tencor Instruments公司的FLX THIN FILMS STRESSMEASUREMENT SYSTEM的FleXus F2320,测量成膜前及成膜后的直径10cm硅基板翘曲(曲率半径),通过这样求得。 · Using film stress Tencor Instruments company's FLX THIN FILMS STRESSMEASUREMENT SYSTEM FleXus F2320, measuring 10cm diameter silicon substrate and warpage before film after film (curvature radius), is obtained by this.

·折射率及衰减系数 使用JA,Woollam Co.Inc.的光谱偏振光椭圆仪WVASE32求得。 Refractive index and extinction coefficient using JA, Woollam Co.Inc. WVASE32 spectrum analyzer ellipsometer obtained.

·混浊值 使用有限会社东京电色的混浊仪TC-HIII求得。 · Turbidity value using Youxianhuishe Tokyo Denshoku haze meter TC-HIII obtained.

·光滑性 使用精工仪器株式会社的多功能装置SPA-400求得。 · Smooth multifunction device Seiko Instruments Inc.'s SPA-400 is obtained.

·波长偏移的求得方法如下所述。 Methods and wavelength shift is obtained as follows. 1、使用日本分光株式会社的自动光学元件测量装置ART-25GT,测量样品的光谱透射率。 1, using an automatic optical element measuring apparatus by Japan Spectroscopy Corporation of ART-25GT, the sample was measured spectral transmittance. 2、将样品放入Tabyspec株式会社的小型环境试验机SH-220,在60℃、90%RH的设定条件下放置120小时。 2, the sample is placed Tabyspec Corporation environmental test machine SH-220, allowed to stand at 60 ℃, setting conditions of 90% RH for 120 hours. 3、将样品从小型环境试验机SH-220中取出,使用自动光学元件测量装置ART-25GT,测量光谱透射率。 3, the samples were removed from small environment test machine SH-220, an automatic optical element measuring apparatus ART-25GT, measured spectral transmittance. 4、将上述的1~3的测量结果之差作为波长偏移。 4, the difference between the measurements 1 to 3 as a result of the wavelength shift.

图37所示为作为参考的光学多层膜所要求的膜特性目标值一览表。 FIG 37 is a list of target optical multilayer film properties as required by the reference.

如图35至图36所示,若仅使用AC磁控管进行成膜,则在膜应力、折射率、衰减系数。 As shown in FIG. 35 to FIG. 36, if only AC magnetron deposition, then the film stress, refractive index, attenuation coefficient. 混浊值、光滑性、耐久性(波长偏移)等方面,能得到优异的结果。 Turbidity value, in slipperiness and durability (wavelength shift) and the like, excellent results can be obtained. 另外,在约4μm以下的膜厚中得到的结果是用DC溅射及蒸镀法,随着膜厚增加,其表面粗糙度(Ra)增大,但用AC溅射法,则与膜厚无关,表面粗糙度显示出约0.5nm左右较小的数值。 Further, the results obtained in a thickness of about 4μm or less is that, as the film thickness increases, the surface roughness (Ra) is increased by the DC sputtering and a vapor deposition method, but using an AC sputtering method, the film thickness regardless of the surface roughness of about 0.5nm shows a smaller value.

工业上的实用性如上所述,根据本发明,在转盘型溅射装置中,由于在成膜中监视膜厚,并利用该信息控制影响成膜量的参数,因此能够正确控制膜厚,能够以高生产率形成所希望膜厚的膜。 INDUSTRIAL APPLICABILITY As described above, according to the present invention, the dial-type sputtering apparatus, since the thickness of the film formation monitor, and use this information to control the amount of influence the deposition parameters, it is possible to properly control the film thickness, can be high productivity desired film thickness is formed.

根据本发明的其它形态,由于同时使用AC型磁控管溅射源及在单一磁控管部分上安装靶的磁控管溅射源,在达到设计膜厚(目标膜厚)之前的一定量,使用AC型磁控管溅射源进行高速成膜,在得到一定量的成膜后,停止利用AC磁控管溅射源进行成膜,仅使用在单一磁控管部分上安装靶的磁控管溅射源,因此能够高精度地控制膜厚,能够以高生产率成膜。 According to another aspect of the present invention, since simultaneously using the AC magnetron sputtering source and a magnetron sputter source target mounted on a single magnetron part, a certain amount of film thickness before reaching the design (target film thickness) of , AC magnetron sputtering source using high-speed film formation, after a certain amount of deposition, and stop using the AC magnetron sputtering source film using only a target mounted on a single magnetron magnetic portion controls sputtering source, it is possible to accurately control the film thickness, the film formation is possible with high productivity.

再有,作为膜厚测量手法,是利用表示测量光的入射角与透射率或反射率的关系的变化曲线,通过这样能够准确决定成膜的终点等。 Further, the film thickness measurement techniques, is represented by the relationship between changes in the angle of incidence of the measuring light and the transmittance or reflectance curve, can accurately determine the end point and the like by such deposition.

根据本发明的别的其它形态,是根据透射率或反射率与入射角的关系进行近似变换,能够实时掌握光谱透射率或光谱反射率的外形曲线,将它们反馈给膜厚控制,通过这样能够将最终产品的外形精加工成所希望的(所希望的光学性能的产品)。 According to still other aspect of the present invention is based on the relationship of transmittance or reflectance with the incident angle approximation conversion, real-time control profile curve spectral transmittance or spectral reflectance, they are fed back to control the thickness, this can by the appearance of the final product to a desired finish (the desired optical properties of the product). 通过这样,能够大幅度提高产品的正品率。 Such a structure can greatly improve the rate of quality products.

另外,根据本发明的别的其它形态,在转盘型溅射装置中,采用倾斜形靶代替以往的平板形靶,或者与其同时使用,通过这样在基板的前进方向上能够容易实现膜厚均匀。 Further, according to still other aspect of the present invention, in the dial-type sputtering apparatus, using a ramp-shaped target plate instead of a conventional target shape, or simultaneously therewith, so that even in the forward direction of the substrate can be easily achieved by the film thickness. 如特开平3-253568号所揭示的那样,在采用两个阴极及对该阴极提供功率用的两个电源的溅射方法(装置)中,在要力图实现膜厚均匀时,必须使两个阴极的成膜速度相等,但实际上在阴极之间很难减小影响成膜的主要因素之差别。 Laid-Open No. 3-253568 as disclosed above, the use of two cathodes, and a sputtering method (apparatus) provided with two power supply of the cathode, while trying to achieve a uniform film thickness, it is necessary that the two the deposition rate is equal to the cathode, but in practice it is difficult to reduce the difference of the main factors influence the film formation between the cathode. 根据本发明的方法及装置,由于力图使膜厚均匀的阴极电源系统可以是只具有一个电源而构成的,因此其优点是,对前述主要因素的影响小,能更简单地实现膜厚均匀,同时与以往相比,装置的构成也紧凑而且价格低。 The method and apparatus according to the present invention, since trying to make a uniform thickness of a cathode power supply system may be configured having only a power source, and therefore has the advantage that a small influence on the major factor, can be realized more easily a uniform thickness, while compared with the conventional device is also configured compact and low price.

根据所要求的膜厚精度,也可以不使用DC型磁控管,仅使用AC型磁控管进行成膜。 The thickness of the required accuracy, may not be used DC magnetron, AC magnetron only the film formation. 通过使用AC型磁控管进行成膜,能够得到特性优异的多层膜。 By using the AC magnetron film formation, the multilayer film excellent characteristics can be obtained.

另外,在本发明中,作为提高膜厚测量精度的装置,是使测量部分的位置远离成膜空间,通过这样能够减少测量中等离子光的影响。 Further, in the present invention, as a means to improve the measurement accuracy of the film thickness, the position of the measurement portion is remote from the film-forming space, so that the influence can be reduced by measuring the plasma in the light. 再利用遮光筒包围测量光通过的光路的周围,将该遮光筒与腔室绝缘,在电气上处于漂游状态,这样能够大幅度遮断来自成膜空间的等离子散射光。 Recycling tube surrounds the light shielding ambient light measured by the light path, the light shielding insulating cylinder and the chamber, in a state electrically drift, so that the plasma can be significantly blocking the scattered light from the film-forming space.

Claims (9)

1.一种转盘型溅射装置,所述转盘型溅射装置具有下述构造,即:在腔室内设置自由旋转的横截面为多边形或圆形的鼓,在该鼓的外周表面上设置多个基板保持架,在腔室壁的内侧配置多个磁控管溅射源,每个磁控管溅射源由靶及保持该靶的磁控管部分构成,所述靶利用所述磁控管部分保持,使其与所述鼓的转轴平行,所述溅射装置包括:在成膜中测量装在所述多个基板保持架之一上的基板上形成的膜的膜厚的膜厚测量装置;对各靶供给溅射所需要的功率的电源单元;以及利用所述膜厚测量装置得到的测量结果来控制影响成膜量的参数的控制装置。 A dial-type sputtering apparatus, said carousel type sputtering apparatus has a structure in which: a polygonal or circular drum, provided on an outer circumferential surface of the drum in the cross-section of the chamber is provided a multi-rotatably a substrate holder, a plurality of magnetron sputtering sources arranged inside the chamber walls, each of the magnetron sputtering source is a magnetron target and the holding portion constitutes the target, the target using a magnetron holding tube portion to be parallel to the rotation axis of the drum, the sputtering apparatus comprising: a measuring device in the deposition of the plurality of substrates held on the thickness of a film formed on the substrate film thickness of one frame measuring device; a power supply unit for supplying a sputtering power of each target desired; and a measurement result obtained by said means to control film thickness measuring device influence the amount of deposition parameters.
2.如权利要求1所述的溅射装置,其特征在于,所述多个磁控管溅射源是装有低折射率膜成膜用靶的磁控管溅射源以及装有高折射率膜成膜用靶的磁控管溅射源的组合。 2. The sputtering apparatus according to claim 1, wherein said plurality of magnetron sputtering sources are provided with the low refractive index film is formed by magnetron sputter source target, and with a high refractive of the film deposition by magnetron sputter target source combinations.
3.如权利要求1所述的溅射装置,其特征在于,所述膜厚测量装置具有对基板照射测量光的投光装置,以及接受照射所述基板的所述测量光的透射光或反射光后响应于所述透射光或反射光的受光量而产生电信号的受光装置,在所述鼓旋转时,通过从所述投光装置向所述基板照射测量光,进行所述的膜厚测量。 3. The sputtering apparatus according to claim 1, wherein said film thickness measurement apparatus having a measuring light projecting means for irradiating the substrate to light, and irradiating the substrate receiving the measurement light reflected or transmitted light in response to receiving an amount of light of the transmitted light or reflected light generated by the electric signal light after the light means, when the rotation of the drum, by irradiating measurement light to the substrate, the film thickness from the light projecting means measuring.
4.如权利要求3所述的溅射装置,其特征在于,还包括:根据从所述受光装置输出的信号,计算透射率信息或反射率信息的运算装置。 The sputtering apparatus as claimed in claim 3, characterized in that, further comprising: the output signal of the optical receiving device from the calculating means calculating transmittance information or reflectance information.
5.如权利要求3所述的溅射装置,其特征在于,所述膜厚测量装置设置在离开所述多个磁控管溅射源的位置。 5. The sputtering apparatus according to claim 3, characterized in that the means provided at the position away from the plurality of magnetron sputtering sources of the film thickness measurement.
6.一种溅射成膜方法,是采用转盘型溅射装置进行成膜的溅射成膜方法,所述转盘型溅射装置具有下述构造,即:在腔室内设置自由旋转的横截面为多边形或圆形的鼓,在该鼓的外周表面上设置多个基板保持架,在腔室壁的内侧配置的多个磁控管溅射源,每个磁控管溅射源由靶及保持该靶的磁控管部分构成,所述靶利用所述磁控管部分保持,使其与所述鼓的转轴平行,所述方法包括下述工序:在成膜中测量装在所述多个基板保持架之一上的基板上形成的膜的膜厚的膜厚测量工序;利用所述膜厚测量工序中得到的测量结果来控制影响成膜量的参数的控制工序。 6. A method of forming a sputtering a sputtering film forming method, is the use of dial-type sputtering apparatus for film formation, the carousel type sputtering apparatus has a configuration that: a cross-section rotatably disposed in the chamber in the polygonal or circular drum, a plurality of substrate holder disposed on the outer circumferential surface of the drum, a plurality of magnetron sputtering sources arranged inside the chamber wall, each of the magnetron sputtering target and source is magnetron target portion of the holding configuration, the target portion remains with the magnetron, so as parallel with the shaft, said method comprising the steps of the drum: measuring means in said plurality filming a substrate film thickness measurement step of holding the film thickness of a film formed on a substrate on one frame; step measurement results obtained by the film thickness measuring step to control the amount of influence the deposition parameters.
7.如权利要求6所述的溅射成膜方法,其特征在于,还包括:一面使所述鼓旋转,一面对基板照射测量光的投光工序;接受照射到所述基板上的所述测量光的透射光或反射光后响应于该透射光或反射光的受光量而产生电信号的受光工序。 7. The sputtering film forming method according to claim 6, characterized in that, further comprising: one surface of the rotating drum, a step facing the light projecting measurement light irradiated substrate; accepted irradiated onto the substrate, later transmitted light or reflected light in response to the measurement light transmitted or reflected light of the light receiving step of receiving the electrical signals generated light amount.
8.如权利要求7所述的溅射成膜方法,其特征在于,还包括:根据所述的受光工序得到信号计算透射率信息或反射率信息的运算工序。 8. The sputtering film forming method according to claim 7, characterized in that, further comprising: a step to obtain a light receiving signal calculating step of calculating transmittance information or reflectance information according.
9.如权利要求6所述的溅射成膜方法,其特征在于,所述膜厚是在离开所述多个磁控管部分的位置处测量的,从而使得所述多个磁控管部分中产生的等离子光的不利影响最小化。 9. The sputtering film forming method according to claim 6, wherein said film thickness is at a position away from the measurement portion a plurality of magnetrons, such that portions of said plurality of magnetrons adverse effects of the light generated in the plasma is minimized.
CN 200610059588 2001-02-07 2002-02-06 Sputtering apparatus and sputter film deposition method CN100545301C (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001-31004 2001-02-07
JP2001031004 2001-02-07
JP2001-220942 2001-07-23
JP2001-383069 2001-12-17
CN02804597.1 2002-02-06

Publications (2)

Publication Number Publication Date
CN1821438A true CN1821438A (en) 2006-08-23
CN100545301C CN100545301C (en) 2009-09-30

Family

ID=36923007

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200610059588 CN100545301C (en) 2001-02-07 2002-02-06 Sputtering apparatus and sputter film deposition method

Country Status (1)

Country Link
CN (1) CN100545301C (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102978577A (en) * 2011-09-06 2013-03-20 鸿富锦精密工业(深圳)有限公司 Intermediate-frequency magnetron sputtering coating device
CN103046008A (en) * 2008-09-30 2013-04-17 佳能安内华股份有限公司 Sputtering method
CN107532290A (en) * 2015-03-31 2018-01-02 布勒阿尔策瑙股份有限公司 For the method for the substrate for producing coating

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140131198A1 (en) * 2012-11-09 2014-05-15 Tsmc Solar Ltd. Solar cell formation apparatus and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5842642A (en) 1996-06-21 1998-12-01 Plasko; Phil Method and apparatus for spattering masses
JPH11158615A (en) 1997-11-27 1999-06-15 Nec Corp Sputtering device and production of semiconductor device using it

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103046008A (en) * 2008-09-30 2013-04-17 佳能安内华股份有限公司 Sputtering method
CN102978577A (en) * 2011-09-06 2013-03-20 鸿富锦精密工业(深圳)有限公司 Intermediate-frequency magnetron sputtering coating device
CN107532290A (en) * 2015-03-31 2018-01-02 布勒阿尔策瑙股份有限公司 For the method for the substrate for producing coating

Also Published As

Publication number Publication date
CN100545301C (en) 2009-09-30

Similar Documents

Publication Publication Date Title
US7641773B2 (en) Process for producing layers and layer systems, and coated substrate
CN1130575C (en) Plastic optical component having reflection prevention film and mechanism for making reflection prevention film thickness uniform
US4837044A (en) Rugate optical filter systems
JP3064301B2 (en) Thin film forming apparatus and method
Bhattacharyya et al. Spectroscopic ellipsometry of TiO2 layers prepared by ion-assisted electron-beam evaporation
US7123416B1 (en) Method of making high performance optical edge and notch filters and resulting products
US5872655A (en) Monolithic linear variable filter and method of manufacture
DE60005393T2 (en) Heat-absorbing filter and method for the production thereof
US6867865B2 (en) SPR sensor
EP1350864A2 (en) Method for forming a thin film of a composite metal compound and apparatus for carrying out the method
US5914817A (en) Thin film dichroic color separation filters for color splitters in liquid crystal display systems
Waldorf et al. Optical coatings deposited by reactive ion plating
RU2324763C2 (en) Lenses antireflection coating having low internal stress and ultralow residual reflection power
Yamamoto et al. In situ ellipsometric study of optical properties of ultrathin films
JP4243374B2 (en) Sputtering method and apparatus for optical monitoring
CN100398694C (en) Method and device for controlling thickness of optical film, insulation multilayer film and making device
US6426022B1 (en) Process for producing thin film, thin film and optical instrument including the same
EP2484453B1 (en) Smooth, dense optical films
Ristau et al. Optical broadband monitoring of conventional and ion processes
WO1997037051A1 (en) Method of manufacturing substrate with thin film, and manufacturing apparatus
JP5647924B2 (en) Manufacturing method of optical member
Ouellette et al. Experimental studies of inhomogeneous coatings for optical applications
JP4904165B2 (en) Method and apparatus for monitoring optical properties of thin films during a deposition process
US7068430B1 (en) Method of making highly discriminating optical edge filters and resulting products
US7033679B2 (en) Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film

Legal Events

Date Code Title Description
C06 Publication
C10 Entry into substantive examination
C14 Grant of patent or utility model
CP01