CN1787161A - Ion source - Google Patents
Ion source Download PDFInfo
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- CN1787161A CN1787161A CN 200410077416 CN200410077416A CN1787161A CN 1787161 A CN1787161 A CN 1787161A CN 200410077416 CN200410077416 CN 200410077416 CN 200410077416 A CN200410077416 A CN 200410077416A CN 1787161 A CN1787161 A CN 1787161A
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- Prior art keywords
- ion source
- transmitting terminal
- arc chamber
- anode
- cathode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
- H01J27/146—End-Hall type ion sources, wherein the magnetic field confines the electrons in a central cylinder
Abstract
The invention relates to an ion source, comprising: a discharge chamber; a magnetic circuit encircling the discharge chamber; a gas feed system for feeding operating gas and reacting gas to the discharge chamber; an anode arranged below the discharge chamber; a cathode arranged above the discharge chamber, corresponding to the anode, where the cathode comprises plural field emission cold cathodes and the emission end of the cathode aims at the discharge chamber. The ion source adopting carbon nano tube emitter as a cathode has low energy consumption and need not change the cathode.
Description
[technical field]
The present invention relates to a kind of vacuum coating auxiliary equipment, relate in particular to a kind of ion source that is used for Ion Aided Film Coating.
[background technology]
The traditional vacuum filming equipment is with electronics or electron beam coating materials to be heated to evaporating temperature under vacuum condition, makes its evaporation and be deposited on to form film on the base material to reach the purpose of plated film.But the energy that is evaporated the coating materials atom is low, and the attached outstanding power of institute's coatings is poor, density is low, and the character of film is affected by environment greatly, easily come off, instability.In addition, during electron evaporation, the grid voltage of electron gun is 6000-10000V, causes the electrion sparking easily, influences the quality of film.
For the attached outstanding power, the density that increase vacuum coating and improve its physical property, in the electron beam evaporation process, need to use ion source that base material is bombarded, realize the purpose of Ion Aided Film Coating.Ion Aided Film Coating to the sub-bump of pleurodiaphragmatic in terspace of growing up can make the spectral characteristic of film stable especially, water absorption reduces, refractive index raises and roughness reduces, this is that bulk density raises because ion helps the plating caudacoria, it is finer and close that film becomes, therefore water absorption tails off, spectral characteristic so can drift yet, and it is big and stable that refractive index becomes.
Harold R.Kaufman is at the United States Patent (USP) the 4th of bulletin on August 29th, 1989,862, at first disclose for No. 032 and a kind ofly be used for the ion source that the non-grid ion helps plating and promptly hold hall ion source (End-Hall IonSource), this type of ion source still generally uses now, and its major technique thes contents are as follows:
As shown in Figure 1, end hall ion source 20 is made up of anode 25, magnetic circuit 26 and the air supply system (indicating) of negative electrode 22, reception electronics and the emitting ions of emitting electrons, and this negative electrode 22 comprises a cathode filament 221 and two ceramic insulation pads 224 and 226.Magnetic circuit 26 forms magnetic field in arc chamber 24, the magnetic line of force is sent through arc chamber by the magnetic pole of negative electrode 22 bottoms and enters top pole 27.During ion source work, working gas (argon gas) and reacting gas (as oxygen) are entered in the arc chamber 24 by steam line 21.Meanwhile, cathode filament 221 is heated to the thermionic emission temperature, and anode 25 is subjected to positive potential.Under effect of electric field, the portions of electronics of cathode filament 221 emissions bumps with gas atom or molecule in arc chamber along mode anode 25 migrations of the magnetic line of force with screw, and with its ionization.The electronics that produces in ionization process continues anode 25 migrations, the back formation plasma of the portions of electronics neutralization that the ion that produces will be accelerated under arc chamber 24 effect of electric field and produce with cathode filament 221 penetrates ion source 20, plasma with certain energy directly bombards base material and plates preceding cleaning, or bombardment film surface and film surface atom carry out energy exchange and carry out Ion Aided Film Coating.
On March 10th, 1993, the Chinese patent of bulletin disclosed a kind of ion source that is used for the large tracts of land assisted deposition No. 97228290.4, and it includes arc chamber, anode, cathode emitter, negative electrode magnetic pole piece, magnetic cup and anode magnetic pole piece.Its cathode emitter is the cup-shaped lanthanum boride, and it is heated to temperature could emitting electrons more than 1500 ℃.
On November 20th, 2002, disclosed Chinese patent application disclosed a kind of end hall ion source No. 02116688.9, and it is made up of parts such as cathode filament, anode, air supply system magnetic circuits, and wherein, this cathode filament is a tungsten filament.
But above-mentioned ion source is used to provide the negative electrode of electronics all to adopt to be connected in high-tension tungsten filament or lanthanum boride, and this tungsten filament or lanthanum boride are stimulated under high voltage just can send electronics.Adopt the negative electrode of tungsten filament or lanthanum boride to have two shortcomings: (1) need provide than high working voltage: if the reacting gas in the arc chamber is an oxygen, then the tungsten filament both end voltage is about 110V; If the reacting gas in the arc chamber is a hydrogen, then the tungsten filament both end voltage is about 150V; (2) take normal replacing negative electrode: tungsten filament in use its efficient that produces electronics is long more and reduce along with service time, and be no more than six hours its service time.
So, provides a kind of and have, and it is real in necessary to change the ion source of negative electrode often than low-work voltage.
[summary of the invention]
The object of the present invention is to provide a kind ofly to have, and need not change the ion source of negative electrode often than low-work voltage.
For realizing the object of the invention, the invention provides a kind of ion source, it comprises:
One arc chamber;
One magnetic circuit, this magnetic circuit is around this arc chamber;
One air supply system is used for providing working gas and reacting gas to this arc chamber;
One anode is arranged on the below of this arc chamber;
One negative electrode is arranged on the top of this arc chamber, and is corresponding with above-mentioned anode;
Wherein, this negative electrode is a plurality of field emission cold-cathodes, and its transmitting terminal is aimed at this arc chamber.
This field emission cold-cathode comprises carbon nano-tube field transmitting terminal, various needle point structures field transmitting terminal or various thin film field transmitting terminal.
Compare with prior art, ion source of the present invention adopts a plurality of field emission cold-cathodes as the negative electrode that is used to provide electronics.The operating voltage of field emission cold-cathode is lower, as, the operating voltage of the field-transmitting cathode of employing carbon nano-tube is greatly about about 20V, far below the operating voltage that adopts tungsten filament or lanthanum boride, so it has the advantage of low energy consumption, and the carbon nano-tube field emission apparatus has long service life, advantage that volume is little.To sum up, adopt the carbon nano-tube field emission apparatus to have low energy consumption, and need not change the advantage of negative electrode often as the ion source of negative electrode.
[description of drawings]
Fig. 1 is the ionogenic generalized section of prior art.
Fig. 2 is the ionogenic generalized section of first embodiment of the invention.
Fig. 3 is the ionogenic generalized section of second embodiment of the invention.
[embodiment]
The present invention is described in further detail below in conjunction with drawings and Examples.
See also Fig. 2, the ion source 30 of the first embodiment of the present invention, it comprises: an arc chamber 34; One magnetic circuit 36, this magnetic circuit 36 is around this arc chamber 34; One air supply system (not indicating) is used for providing working gas and reacting gas to this arc chamber 34; One anode 35 is arranged on the below of this arc chamber 34; A plurality of field emission cold-cathodes 32 are arranged on the top of this arc chamber 34, and are corresponding with above-mentioned anode 35.
Magnetic circuit 36 of the present invention is for establishing around this ion source 30, and it generally is made up of back of the body magnetic pole (not indicating), magnet (not indicating), outer magnet (not indicating) and top magnet 364.The back of the body magnetic pole of this magnetic circuit 36 (not indicating), magnet (not indicating), outer magnet (not indicating) and top magnet 364 form magnetic field (as shown in Figure 2) in arc chamber 34.
Each this field emission cold-cathode 32 comprises that a transmitting terminal 322 and is used to support the insulation support arm 324 of this transmitting terminal 322, and a plurality of insulation support arms 324 are separately fixed at the top magnet 364 of magnetic circuit 36, and makes a transmitting terminal 322 and other parts insulation.Originally be embodied as the field transmitting terminal 322 that adopts carbon nano-tube, it comprises that a substrate 3221 and is formed at the carbon nano pipe array 3223 on these substrate 3221 surfaces, this substrate 3221 is connected with insulation support arm 324, and these substrate 3221 external power supplys are used to provide an operating voltage.Wherein, the shape of these a plurality of insulation support arms 324 can design arbitrarily under the requirement of playing the carbon nano pipe array 3223 aligning arc chambers 34 that cooperate a transmitting terminal 322.
This anode 35 is a cylindrical structure, and shaft core position offers the groove of a pyramidal structure in its edge, corresponds to this field emission cold-cathode 32.The conical socket substructure of this anode 35 goes out to load the circular crucible 351 of coating materials.The bottom of this anode 35 is provided with air distribution plate 312, and this anode 35 is connected with air distribution plate 312 by bolt (not indicating).Air distribution plate 312 is provided with a steam line 313, forms air supply system.
Ion source 30 of the present invention is when the vacuum environment operation, and working gas and reacting gas are imported in the arc chamber 34 by a steam line 313 respectively, and working gas is selected argon gas for use, and reacting gas is selected oxygen for use.The magnetic line of force is sent by the magnetic circuit 36 of field emission cold-cathode 32 bottoms and enters top pole 364.Meanwhile, the power supply external with this transmitting terminal 322 provides a transmitting terminal 322 1 negative potentials, provides anode 35 1 positive potentials, the carbon nano pipe array 3223 ejaculation electronics that is stimulated.Under the electric field action of arc chamber, the portions of electronics that sends from carbon nano pipe array moves along magnetic line of force direction anode 35, in arc chamber 34, bump with gas atom or molecule, and with its ionization.The electronics that produces in ionization process continues anode 35 migrations, and the ion of generation will be accelerated under arc chamber 34 effect of electric field, after the portions of electronics neutralization that produces with field transmitting terminal 322, forms plasma and penetrates from ion plating aide 30.Plasma beam with certain energy directly bombards and plates preceding cleaning base material (indicating), or bombarding base material film surface and film surface atom carry out energy exchange and carry out Ion Aided Film Coating.
See also Fig. 3, the ion source 40 of the second embodiment of the present invention, it comprises: an arc chamber 44; One magnetic circuit (not indicating), this magnetic circuit is around this arc chamber 44; One anode 45 is arranged on arc chamber 44 belows; A plurality of field emission cold-cathodes 42 are arranged on arc chamber 44 tops; With an air supply system (not indicating), be used for providing working gas and reacting gas to this arc chamber 44.
This magnetic circuit comprises back of the body magnetic pole 461, magnet 462, outer magnetic pole 463 and top pole 464, can form a magnetic field in arc chamber 44.
This anode 45 is provided with the crucible 451 that loads coating materials, and this anode 45 is connected with the air distribution plate 49 of below by bolt 48.This air distribution plate 49 is provided with ring-like cloth air drain 50, has along the equally distributed air vent 51 of circumference at ring-like cloth air drain 50 tops.Ring-like cloth air drain 50 connects a steam line 52 downwards.Above-mentioned air distribution plate 49, ring-like cloth air drain 50, air vent 51 and steam line 52 constitute this air supply system.Working gas (as argon gas) and reacting gas (as oxygen) are entered in the ring-like cloth air drain 50 by this steam line 52, then by air vent 51 along the air feed in arc chamber of direction shown in the figure.
In addition, this anode 45 and crucible 451 bottoms generally also are provided with water-cooling system (not indicating), are at high temperature burnt to avoid crucible 351 and other workpiece.This water-cooling system comprises that a water cooling chamber 47, that is located at this anode 45 and crucible 451 bottoms is located at the cooling water intake 53 and the delivery port 54 of annular cloth air drain 50 belows.Cooling water enters into water cooling chamber 47 by water inlet 53, is flowed out by delivery port 54 after circulation and anode 45 heat exchanges, and is sufficiently cooled to guarantee crucible 451, avoids crucible 451 and other parts to be burnt.
Each field emission cold-cathode 42 comprises that a transmitting terminal 422 and is used to support the insulation support arm 424 of this transmitting terminal 422, and a plurality of insulation support arms 424 are fixed on top pole 464.Originally be embodied as the field transmitting terminal 422 that adopts carbon nano-tube, it comprises that a substrate 4221 and is formed at the carbon nano pipe array 4223 on these substrate 4221 surfaces, this substrate 4221 is connected with insulation support arm 424, and these substrate 4221 external power supplys are used to provide an operating voltage.
Present embodiment ion source 40 is installed in the vacuum-chamber wall by flange backboard 55, and its operation principle is identical with first embodiment.Be understandable that the ionogenic field emission cold-cathode of the present invention also can adopt a various material of emission that are suitable for except that adopting carbon nano-tube, comprise various needle point structures, for example various metal tips, nonmetal point, compound point, nanometer rod shaped structure etc.; Or various membrane structures, for example diamond thin etc.
Ion gun of the present invention adopts a plurality of field emission cold-cathodes as the negative electrode that is used for providing electronics. The field is sent out The operating voltage of penetrating cold cathode is lower, as, the operating voltage of the field-transmitting cathode of employing CNT is about About 20V, far below the operating voltage that adopts tungsten filament or lanthanum boride, so it has the excellent of low energy consumption Point, and carbon nano tube field emission device has long service life, advantage that volume is little. So, adopt Carbon nano tube field emission device has low energy consumption as the ion gun of negative electrode, and need not often change negative electrode Advantage.
Claims (15)
1. ion source, it comprises:
One arc chamber;
One magnetic circuit, this magnetic circuit is around this arc chamber;
One air supply system is used for providing working gas and reacting gas to this arc chamber;
One anode is arranged on the below of this arc chamber;
One negative electrode is arranged on the top of this arc chamber, and is corresponding with above-mentioned anode;
It is characterized in that this negative electrode is a plurality of field emission cold-cathodes, its transmitting terminal is aimed at this arc chamber.
2. ion source as claimed in claim 1 is characterized in that this field emission cold-cathode comprises that a transmitting terminal and is used to support the insulation support arm of this transmitting terminal.
3. ion source as claimed in claim 2 is characterized in that this transmitting terminal comprises carbon nano-tube field transmitting terminal.
4. ion source as claimed in claim 2 is characterized in that this transmitting terminal comprises metal tip, nonmetal point, compound point, shaft-like transmitting terminal of nanometer.
5. ion source as claimed in claim 2 is characterized in that this transmitting terminal comprises the thin film field transmitting terminal.
6. ion source as claimed in claim 5 is characterized in that this transmitting terminal comprises diamond thin field transmitting terminal.
7. ion source as claimed in claim 1 is characterized in that this magnetic circuit comprises back of the body magnetic pole, magnet, outer magnetic pole and top pole, is used for forming in arc chamber a magnetic field.
8. ion source as claimed in claim 1 is characterized in that this anode is provided with a crucible.
9. ion source as claimed in claim 1 is characterized in that this anode below is provided with an air distribution plate.
10. ion source as claimed in claim 1 is characterized in that this air supply system comprises that an air distribution plate and is arranged on the ring-like cloth air drain of this air distribution plate, and the top of this ring-like cloth air drain is provided with air vent, and the lower end is connected with a steam line.
11. ion source as claimed in claim 10 is characterized in that this steam line feeds working gas and reacting gas.
12. ion source as claimed in claim 1 is characterized in that this working gas is an argon gas.
13. ion source as claimed in claim 1 is characterized in that this reacting gas is an oxygen.
14. ion source as claimed in claim 1 is characterized in that this anode and crucible bottom are provided with a water-cooling system.
15. ion source as claimed in claim 14 is characterized in that this water-cooling system comprises a water cooling chamber, an inlet port and a delivery port.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB200410077416XA CN100463099C (en) | 2004-12-08 | 2004-12-08 | Ion source |
Applications Claiming Priority (1)
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CNB200410077416XA CN100463099C (en) | 2004-12-08 | 2004-12-08 | Ion source |
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CN1787161A true CN1787161A (en) | 2006-06-14 |
CN100463099C CN100463099C (en) | 2009-02-18 |
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CNB200410077416XA Expired - Fee Related CN100463099C (en) | 2004-12-08 | 2004-12-08 | Ion source |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101894725A (en) * | 2010-07-09 | 2010-11-24 | 清华大学 | Ion source |
CN104269336A (en) * | 2014-09-04 | 2015-01-07 | 兰州空间技术物理研究所 | Ion thruster discharge chamber magnetic pole structure and design method thereof |
CN104701123A (en) * | 2015-03-24 | 2015-06-10 | 中国计量学院 | Cold-cathode kaufman ion source device for carbon nano tube |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4862032A (en) * | 1986-10-20 | 1989-08-29 | Kaufman Harold R | End-Hall ion source |
US6075321A (en) * | 1998-06-30 | 2000-06-13 | Busek, Co., Inc. | Hall field plasma accelerator with an inner and outer anode |
US6290564B1 (en) * | 1999-09-30 | 2001-09-18 | Motorola, Inc. | Method for fabricating an electron-emissive film |
CN1160477C (en) * | 2002-04-16 | 2004-08-04 | 北京科技大学 | Hall type ion auxiliary evaporation source |
-
2004
- 2004-12-08 CN CNB200410077416XA patent/CN100463099C/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101894725A (en) * | 2010-07-09 | 2010-11-24 | 清华大学 | Ion source |
CN104269336A (en) * | 2014-09-04 | 2015-01-07 | 兰州空间技术物理研究所 | Ion thruster discharge chamber magnetic pole structure and design method thereof |
CN104269336B (en) * | 2014-09-04 | 2016-08-31 | 兰州空间技术物理研究所 | A kind of ion thruster arc chamber field structure and method for designing thereof |
CN104701123A (en) * | 2015-03-24 | 2015-06-10 | 中国计量学院 | Cold-cathode kaufman ion source device for carbon nano tube |
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CN100463099C (en) | 2009-02-18 |
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